Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1 TIC106 SERIES SILICON CONTROLLED RECTIFIERS. * 5A Continuous On-State Current © 30 A Surge-Current © Glass Passivated Wafer © 400 V to 800 V Off-State Voltage © Max Igy of 200 pA in 215 in electrical contact withthe mounting base. 0.220 PACKAGE (TOP View) oowses absolute maximum ratings over operating case temperature (unless otherwise noted) RATING svmeoL | VALUE | UNIT TCHR 70 Tict06%4 000 Repetitive peck of-stae vollage (see Note 1) Terre | Von aa v Treen 00 Tici9@0 200 Ticto6M 00 , Repetitive peak reverse voltage Tee Va oe v Ticraon 200 Ceriinuous Or ae Guat ator BAGH] OC Ce TepeTaLNG Gee NOTED Tra 3 ® ‘ravage on Sta erat (TUO™ conduction anglay at (or olan) BOC Sasa Wamp {see Note 3) haw a “ ‘Suge on ale CUTE EEE NTE AY Th w R oak postive pate Guent (pulse wan ZOO) Tow 02 B Peak gate power dissipation (pulse width = 300 xs) Pom’ 13 we ‘Rerage gee power dspaton (see NewS) Pav) T3 W ‘Gperaing cas eripralre range Te ae |e Sorage temperature range Tg | 010105 | 7E ead temperature 1.5 im ROT Se Tor TO SEConS Te Za °c NOTES 1. These values apply whan the gate-cathodo resistance Ray = 1 KA. 2. These values apply for continuous de operation with rosisive ldad. Above 80°C deralolingatly to zero at 110°C. 3. This value may be sppled continuously under sinle phase SO Hz hatf-sine-wave operation wh resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value apes for ane 50 Hz hasine-wave when the device is operating a (or below) the rated value of peak reverse voltage and on-state 5, This value applies fora maximum averaging time of 20 ms PRODUCT INFORMATION Invermation 'scurtent as of publication dale. Products conform to specications in accordance ‘win the terms of Pawar imeveionsstandaré waranty Production processing does Act necessary incude testing ofl pa‘ameters ent. Surge may be repeated afer the device has returned fo oiginal thermal equlbrium. Power INNOVATIONS ppTIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 REVISED MARCH 1007 electrical characteristics at 25°C case temperature (unless otherwise noted) of-state votage PARAMETER TEST CONDITIONS wan [ WP | wax [ONT apoiine Poa Toon Vp =1064 Vong Rog= 1K To 106 woo fA ony off-state current. ° aa ‘or © Taw RUBE Ta Vans te 8 — + | om Tee Gao Taner out REIS Eas wp ee Tee ae Vor Gale nage votoge ot] oo) 1 |v See © 02 we 8 se Wodnacuroe [at ir 1m na i" Vea =OV ; lating r= 10 mA vy Peak on-state y= 5A, (See Note 6) 17 v Tw votage a ‘ Cricar ao ose avn Rg = 1H Ten 110% ‘0 vais thermal characteristics NOTE 6 This parameter must be moasured using pulse techniques, f = 300 ys, duly cyclo <2 %. Voltage sens tho current carying contacts, are locatod wrhin 3.2 mm from the device body. ing-conlaets, soparato fom PARAWETER va [| wax ONT Raic__ Junction to case thermal resistance: 35 | “cw Raia__ Junction to tree air thermal resistance: 25 | CW resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONOITONE va [| wax] ONT CNT TS \e=10m So Fa 175 vs Gea EY =ER Ig 10m se Fie? 7 7 tumot ine ta PRODUCT INFORMATIONTIC106 SERIES SILICON CONTROLLED RECTIFIERS. APRIL 1971 - REVISED MARCH 1907 PARAMETER MEASUREMENT INFORMATION ve 10% —— \ 80% PMCIAA Figure 1. Gate-controlled turn-on time NOTES: A. Resistor R1 is adusted forthe specited value Oleg BB Redistor R2 valu i 20, where isthe nolding current value of thyristor THt © Thyrsior THT is te Samo doviee ype as tne our. D. Pulse Gonorators, G1 and G2, are synchronised to pioduce an on-state anode urvent waveform with Pe folowing characteristics @ 4,5 80 ysto 300s PL |e Puse ceneralors, Gt ana 62, nave output pulse ampitude, V, of 220 V and duration of 10 sto 20 us ‘G2, Synchronisation a_i PMC1AB Figure 2. Circuit-commutated turn-off time INNOVATIONS PRODUCT INFORMATION meena fl 3TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 REVISED MARCH 1907 TYPICAL CHARACTERISTICS AVERAGE ANODE ON-STATE CURRENT MAX CONTINUOUS ANODE POWER DISSIPATED DERATING CURVE vs CONTINUOUS ON-STATE CURRENT reo rie < 6 = 100 ¢ TT a Preawe E i Continuous Oc : f Bs 2 g 3 iz } a3 — Ew 2? : \ Z ee é 1 ® \} = 2 Conduction 2 . ‘Angle & Jo 1 0-69) e090 100 110 ‘ 10 100 Te Case Temperature 1, -Continuous On.State Curent -A Figure 3. Figure 4. SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE vs vs CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION 100 oe Tes 10 Teno Teeove z < No Prior Device Conduction S 2 Gate Contol Guaranteed 3 g 5 Bw | |_| 4 5 1 | 2 = + ' i é o1 70 100 1 10 “00 Consecutive 60H Haine Wave Cycles Consecutive 60 He Hat Sine Wave Cycles Figure 5. Figure 6. PRODUCT INFORMATIONTIC106 SERIES SILICON CONTROLLED RECTIFIERS. APRIL 1971 REVISED MARCH 1097 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE vs vs (CASE TEMPERATURE CASE TEMPERATURE 1 4 2 08 i 2 gm 3 06 8 2 : 2 o4 3 mM 3 ~ 40 o a nT “0 a 0~«SSCSCSSCAOOC2s Te Case Temperature °C Te-Case Temperature °C Figure 7. igure 8. GATE FORWARD VOLTAGE HOLDING CURRENT vs vs GATE FORWARD CURRENT CASE TEMPERATURE . La 3 = 900s ¢ Initiating 1, = 10 ma’ | Poetics : 5 i z 2 i : g 2 2 : 2 Figure 9. Figure 10. PRODUCT INFORMATION Power i) INNOVATIONS 5TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 REVISED MARCH 1907 TYPICAL CHARACTERISTICS PEAK ON-STATE VOLTAGE (GATE-CONTROLLED TURN-ON TIME vs vs PEAK ON-STATE CURRENT GATE CURRENT 2s rome too 7 rose Van 30 > T2256 £ R260 7 20)— 4)=300 us 2 80 1. £25 + 3 Duty Cycle <2% E See Test Circuit and Waveforms bis 2 eo g 2 g z g z eT g 2 3 * os 2 20 * 00 00 4 1 10 o 1 10 lays Peak On-State Current =A 1g Gate Current «ma Figure 11. Figure 12. CIRCUIT-COMMUTATED TURN-OFF TIME vs CASE TEMPERATURE . T T T g v 2“) as6o i El. 8A 5 See Test Circuit and Waveforms 5 10 Lt 2, eel : ge Ba 2 ° rr a a eT Tc- Gas Temperature -°c Figure 13. PRODUCT INFORMATIONTIC106 SERIES SILICON CONTROLLED RECTIFIERS. APRIL 1971 - REVISED MARCH 1907 MECHANICAL DATA 70-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. 0220 470 420 398g 1 432. oan 123 rr see Note 8 ase Note ¢ os? ot 274 ose meee) 041 VERSION 1 Zo VERSION 2 ALLLINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The cone pnie nelecircalcontactwn me meuring tb. MDOBE 'B. Mounting tab corer profe according to package version . Typeeal fang nole centre stand off height accoraing to package version Version 1, 180 mm. Version 2, 17.6 mm. INNOVATIONS PRODUCT INFORMATION meena fl 7TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 REVISED MARCH 1007 IMPORTANT NOTICE Power Innovations Limited (Pl) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by govemment requirements. Pl accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of Pl covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION