UNIVERSITARIO : UNIV.

ROJAS GARCIA IVER LUIS

UNIV. VILLARROEL ALCOCER PAMELA RAFAELA
DOCENTE : LIC. MARCELINO CHOQUECHAMBI
PARALELO : 3-V-1

1
 1. INTRODUCCION

Como realizamos este trabajo está aplicado en la rama de la electrónica de potencia, al referirnos
a la electrónica de potencia nos referimos a la parte encargada del estudio de dispositivos circuitos
sistemas y procedimientos para el procesamiento control y conversión de la energía eléctrica

En este trabajo también mencionamos la función del TRIAC, y su uso en la electrónica de potencia,
el TRIAC o Triado triado que es de la familia de los tiristores, sin embargo la diferencia con tiristor
convencional es que este es unidireccional y el TRIAC bidireccional, de forma coloquial podríamos
decir que el día que es un interruptor capaz de conmutar la corriente alterna

2. APLICACIONES COMUNES DEL DESTELLADOR

Las aplicaciones más comunes de un DESTELLADOR, este circuito permite encender

secuencialmente dos tipos de focos o led’s que pueden ser usados para señalizar o indicarla
dirección de movimiento de izquierda a derecha con luces intermitentes o también ser usadas como
luces de emergencia o luces de seguridad tal como se menciona en el video

3. OBJETIVOS

 Familiarizarse con el comportamiento básico del TRIAC y aplicar el TRIAC mediante la

implementación de circuitos de disparo RC
 Aplicar al trabajo sobre la rama electrónica de potencia
 Demostrar su uso y manejo en el ámbito industrial y social.

4. LISTA DE MATERIALES
 1 pila de 9 V
 1 IC4011
 2 resistencias de 100
 1 condensador electrolítico de 10 μF
 1 potenciómetro 10kΩ
 1 resistencia de 10kΩ
 2 MOC 3021
 2 TRIAC (BT 136) BT139
 2 FOCO

5. DESARROLLO DEL PROYECTO

Primeramente, procedimos a armar el circuito del programe EAGLE y hacer una simulación de la
práctica y diseñar el circuito para luego imprimir en la placa de cobre y baquelita y posteriormente
armarlo.

6. CIRCUITO IMPRESO

A continuación, diagrama programa eagle

2
adjuntamos el circuito impreso

7. DIAGRAMA DE INSTALACION DEL CABLE

Lamp1

Lamp2

8. CONCLUSIONES

En esta práctica pudimos comprobar cómo funciona físicamente los disparos del TRIAC 139, el
circuito fue controlado con un potenciómetro

3
4
REPORTE FOTOGRAFICO

5
6
Philips Semiconductors Product specification

Triacs BT136 series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT136- 500 600 800
bidirectional transient and blocking BT136- 500F 600F 800F
voltage capability and high thermal BT136- 500G 600G 800G
cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V
applications include motor control, voltages
industrial and domestic lighting, IT(RMS) RMS on-state current 4 4 4 A
heating and static switching. ITSM Non-repetitive peak on-state 25 25 25 A
current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab

1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 23 G
tab main terminal 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

August 1997 1 Rev 1.200

Philips Semiconductors Product specification

Triacs BT136 series

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
VT On-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs
commutating voltage IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max); - - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs

August 1997 2 Rev 1.200

Philips Semiconductors Product specification

Triacs BT136 series

Ptot / W BT136 Tmb(max) / C IT(RMS) / A BT136

8 101 5

7 104 107 C
= 180 4
6 1
107
120
5 110 3
90
60
4 113
30
3 116 2

2 119
1
1 122

0 125 0
0 1 2 3 4 5 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A BT136 IT(RMS) / A BT136

1000 12

IT ITSM
10
T time
8
Tj initial = 25 C max

100 6
dIT /dt limit
4
T2- G+ quadrant

10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 107˚C.

ITSM / A BT136 VGT(Tj)

30 VGT(25 C) BT136
1.6
IT I TSM
25
1.4
T time
20 Tj initial = 25 C max 1.2

15
1

10 0.8

5 0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

August 1997 3 Rev 1.200

Philips Semiconductors Product specification

Triacs BT136 series

IGT(Tj) IT / A BT136
IGT(25 C) BT136 12
3 Tj = 125 C
T2+ G+ Tj = 25 C typ max
T2+ G- 10
2.5 Vo = 1.27 V
T2- G- Rs = 0.091 ohms
T2- G+ 8
2

1.5 6

1 4

0.5 2

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT136

IL(25 C) 10
TRIAC
3 unidirectional

2.5 bidirectional
1
2

1.5

0.1 P tp
D
1

0.5 t

0.01
0 10us 0.1ms 1ms 10ms 0.1s 1s 10s
-50 0 50 100 150
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dVcom/dt (V/us)

1000
IH(25C) TRIAC
3
off-state dV/dt limit
BT136...G SERIES
2.5
BT136 SERIES
100 BT136...F SERIES
2

1.5

1 10

0.5 dIcom/dt = 5.1 3.9 3 2.3 1.8 1.4

A/ms
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

August 1997 4 Rev 1.200

Philips Semiconductors Product specification

Triacs BT136 series

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

August 1997 5 Rev 1.200

Philips Semiconductors Product specification

Triacs BT136 series

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 1997 6 Rev 1.200

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

PACKAGE SCHEMATIC

ANODE 1 6 MAIN TERM.

6
6 CATHODE 2 5 NC*
1
N/C 3 4 MAIN TERM.
1

*DO NOT CONNECT

(TRIAC SUBSTRATE)

DESCRIPTION
The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a GaAs infrared
emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between
electronic controls and power triacs to control resistive and inductive loads for 115 VAC operations.

FEATURES
• Excellent IFT stability—IR emitting diode has low degradation
• High isolation voltage—minimum 5300 VAC RMS
• Underwriters Laboratory (UL) recognized—File #E90700
• Peak blocking voltage
– 250V-MOC301XM
– 400V-MOC302XM
• VDE recognized (File #94766)
– Ordering option V (e.g. MOC3023VM)

APPLICATIONS
• Industrial controls
• Traffic lights
• Vending machines
• Solid state relay
• Lamp ballasts
• Solenoid/valve controls
• Static AC power switch
• Incandescent lamp dimmers
• Motor control

© 2003 Fairchild Semiconductor Corporation Page 1 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Parameters Symbol Device Value Units
TOTAL DEVICE
Storage Temperature TSTG All -40 to +150 °C
Operating Temperature TOPR All -40 to +85 °C
Lead Solder Temperature TSOL All 260 for 10 sec °C
Junction Temperature Range TJ All -40 to +100 °C
Isolation Surge Voltage(1)
VISO All 7500 Vac(pk)
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C 330 mW
PD All
Derate above 25°C 4.4 mW/°C
EMITTER
Continuous Forward Current IF All 60 mA
Reverse Voltage VR All 3 V
Total Power Dissipation 25°C Ambient 100 mW
PD All
Derate above 25°C 1.33 mW/°C
DETECTOR
MOC3010M/1M/2M 250
Off-State Output Terminal Voltage VDRM V
MOC3020M/1M/2M/3M 400
Peak Repetitive Surge Current (PW = 1 ms, 120 pps) ITSM All 1 A
Total Power Dissipation @ 25°C Ambient 300 mW
PD All
Derate above 25°C 4 mW/°C

Note
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and
Pins 4, 5 and 6 are common.

© 2003 Fairchild Semiconductor Corporation Page 2 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage IF = 10 mA VF All 1.15 1.5 V
Reverse Leakage Current VR = 3 V, TA = 25°C IR All 0.01 100 µA
DETECTOR
Peak Blocking Current,Either Direction Rated VDRM, IF = 0 (note 1) IDRM All 10 100 nA
Peak On-State Voltage,Either Direction ITM = 100 mA peak, IF = 0 VTM All 1.8 3 V

TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

DC Characteristics Test Conditions Symbol Device Min Typ Max Units
MOC3020M 30
MOC3010M
15
MOC3021M
LED Trigger Current Voltage = 3V (note 3) IFT MOC3011M mA
10
MOC3022M
MOC3012M
5
MOC3023M
Holding Current, Either Direction IH All 100 µA

Note
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 5 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies
between max IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M,
5 mA for MOC3012M and MOC3023M) and absolute max IF (60 mA).

© 2003 Fairchild Semiconductor Corporation Page 3 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 On-State Characteristics
1.8 800

1.7 600

ON-STATE CURRENT - I TM (mA)

1.6 400
VF - FORWARD VOLTAGE (V)

200
1.5

0
1.4
TA = -55oC

-200
1.3
TA = 25oC
-400
1.2
TA = 100oC
-600
1.1

-800
1.0 -3 -2 -1 0 1 2 3
1 10 100
ON-STATE VOLTAGE - V TM (V)
IF - LED FORWARD CURRENT (mA)

Fig. 3 Trigger Current vs. Ambient Temperature Fig. 4 LED Current Required to Trigger vs. LED Pulse Width
1.4 25
TRIGGER CURRENT - I FT (NORMALIZED)

1.3
TRIGGER CURRENT - I FT (NORMALIZED)

20 NORMALIZED TO:
PWin ≥ 100 µs
1.2

15
1.1

1.0 10

0.9
5

0.8

0
0.7 1 2 5 10 20 50 100
NORMALIZED TO T A = 25∞C
LED TRIGGER WIDTH - PWin (µs)
0.6
-40 -20 0 20 40 60 80 100

AMBIENT TEMPERATURE - TA (oC)

Fig. 6 Leakage Current, IDRM vs. Temperature

10000
Fig. 5 dv/dt vs. Temperature
12

1000
STATIC dv/dt
10
IDRM, LEAKAGE CURRENT (nA)

CIRCUIT IN FIGURE 5
STATIC - dv/dt (V/µs)

8
100

4 10

0
25 30 40 50 60 70 80 90 100

Ambient Temperature - TA (oC)

0.1
-40 -20 0 20 40 60 80 100

TA, AMBIENT TEMPERATURE ( oC)

© 2003 Fairchild Semiconductor Corporation Page 4 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

1. The mercury wetted relay provides a high speed repeated

400V (MOC302X)
pulse to the D.U.T.
250V (MOC301X)
Vdc RTEST 2. 100x scope probes are used, to allow high speeds and
R = 10 kΩ
voltages.
CTEST 3. The worst-case condition for static dv/dt is established by
PULSE
INPUT triggering the D.U.T. with a normal LED input current, then
MERCURY
WETTED X100 removing the current. The variable RTEST allows the dv/dt
RELAY SCOPE
D.U.T. PROBE to be gradually increased until the D.U.T. continues to
trigger in response to the applied voltage pulse, even
after the LED current has been removed. The dv/dt is
then decreased until the D.U.T. stops triggering. τRC is
measured at this point and recorded.

Vmax = 400 V (MOC302X)

APPLIED VOLTAGE = 250 V (MOC301X)
WAVEFORM 252 V (MOC302X)
158 V (MOC301X)
0.63 Vmax 252
dv/dt = τRC = τ (MOC302X)
0 VOLTS RC
τRC
158
= τ (MOC301X)
RC
Figure 5. Static dv/dt Test Circuit

Note: This optoisolator should not be used to drive a load directly.

It is intended to be a trigger device only.

RL

Rin 1 6 180
VCC 120 V
60 Hz
2 MOC3010M 5
MOC3011M
MOC3012M
3 4

Figure 6. Resistive Load

ZL

Rin 1 6 180 2.4k

VCC
120 V
2 MOC3010M 5 60 Hz
MOC3011M 0.1 µF C1
MOC3012M
3 4

Figure 7. Inductive Load with Sensitive Gate Triac (IGT ≤ 15 mA)

© 2003 Fairchild Semiconductor Corporation Page 5 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

ZL

Rin 1 6 180 1.2 k

VCC
120 V
2 MOC3010M 5 60 Hz
MOC3011M 0.2 µF C1
MOC3012M
3 4

Figure 8. Inductive Load with Sensitive Gate Triac (IGT ≤ 15 mA)

Rin 1 6 360 470

VCC HOT
MOC3020M
2 MOC3021M 5
0.05 µF 39
MOC3022M 240
MOC3023M VAC
3 4
0.01 µF

LOAD GROUND

In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.
The 39 ohm resistor and 0.01µF capacitor are for snubbing of the triac, and the 470 ohm resistor and
0.05 µF capacitor are for snubbing the coupler. These components may or may not be necessary
depending upon the particular and load used.

Figure 9. Typical Application Circuit

© 2003 Fairchild Semiconductor Corporation Page 6 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.350 (8.89) 0.350 (8.89)

0.320 (8.13) 0.320 (8.13)

0.390 (9.90)
0.332 (8.43)
0.260 (6.60) 0.260 (6.60)
0.240 (6.10) 0.240 (6.10)

0.070 (1.77) 0.070 (1.77)

0.040 (1.02) 0.040 (1.02) 0.320 (8.13)
0.014 (0.36) 0.320 (8.13)
0.014 (0.36)
0.010 (0.25) 0.010 (0.25)

0.200 (5.08)
0.115 (2.93) 0.200 (5.08) 0.012 (0.30)
0.115 (2.93) 0.008 (0.20)

0.100 (2.54)
0.015 (0.38) 0.025 (0.63)
0.020 (0.51)
0.020 (0.50) 15° 0.100 [2.54]
0.100 (2.54) 0.035 (0.88)
0.016 (0.41) 0.020 (0.50)
0.012 (0.30) 0.006 (0.16)
0.016 (0.41)

Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for

0.350 (8.89)
Surface Mount Leadform
0.320 (8.13)

0.070 (1.78)
0.260 (6.60)
0.240 (6.10)

0.060 (1.52)

0.070 (1.77)
0.040 (1.02)
0.014 (0.36)
0.010 (0.25)
0.425 (10.79) 0.100 (2.54)

0.200 (5.08)
0.305 (7.75) 0.030 (0.76)
0.115 (2.93)

0.100 (2.54)
0.015 (0.38)

0.100 [2.54] 0.012 (0.30)

0.020 (0.50) 0.008 (0.21)
0.016 (0.41)
0.425 (10.80)
0.400 (10.16)

NOTE
All dimensions are in inches (millimeters)

© 2003 Fairchild Semiconductor Corporation Page 7 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

ORDERING INFORMATION

Option Order Entry Identifier Description

S S Surface Mount Lead Bend
SR2 SR2 Surface Mount; Tape and reel
T T 0.4" Lead Spacing
V V VDE 0884
TV TV VDE 0884, 0.4" Lead Spacing
SV SV VDE 0884, Surface Mount
SR2V SR2V VDE 0884, Surface Mount, Tape & Reel

MARKING INFORMATION

MOC3010 2

6
V X YY Q

3 4 5

Definitions
1 Fairchild logo
2 Device number
VDE mark (Note: Only appears on parts ordered with VDE
3
option – See order entry table)
4 One digit year code, e.g., ‘3’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with
date code ‘325’ or earlier are marked in portrait format.

© 2003 Fairchild Semiconductor Corporation Page 8 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

Carrier Tape Specifications

12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05 Ø1.5 MIN
0.30 ± 0.05 4.0 ± 0.1
1.75 ± 0.10

11.5 ± 1.0
21.0 ± 0.1 24.0 ± 0.3
9.1 ± 0.20

0.1 MAX 10.1 ± 0.20 Ø1.5 ± 0.1/-0

User Direction of Feed

NOTE
All dimensions are in inches (millimeters)

Reflow Profile (White Package, -M Suffix)

300 230°C, 10–30 s

250 245°C peak
Temperature (°C)

200

150
Time above 183°C, 120–180 sec
100
Ramp up = 2–10°C/sec • Peak reflow temperature: 245°C (package surface temperature)
50 • Time of temperature higher than 183°C for 120–180 seconds
• One time soldering reflow is recommended
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Time (Minute)

© 2003 Fairchild Semiconductor Corporation Page 9 of 10 4/30/03

 6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVER OUTPUT
(250/400 VOLT PEAK)

MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

© 2003 Fairchild Semiconductor Corporation Page 10 of 10 4/30/03