SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I MiniSKiiP 2

SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 22 NAB 12
Inverter & Chopper SKiiP 22 NAB 12 I 3)
VCES 1200 V 3-phase bridge rectifier +
VGES ± 20 V braking chopper +
IC Theatsink = 25 / 80 °C 23 / 15 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 46 / 30 A
3-phase bridge inverter
IF = –IC Theatsink = 25 / 80 °C 24 / 17 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 48 / 34 A
Case M2
Bridge Rectifier
VRRM 1500 V
ID Theatsink = 80 °C 25 A
IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C 700 A
I2t tp = 10 ms; sin. 180 °, Tj = 25 °C 2400 A2s
Tj – 40 . . . + 150 °C
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter & Chopper
VCEsat IC = 15 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
td(on) VCC = 600 V; VGE = ± 15 V – 55 110 ns
tr IC = 15 A; Tj = 125 °C – 45 90 ns
td(off) Rgon = Rgoff = 82 Ω – 400 600 ns
tf inductive load – 70 100 ns
Eon + Eoff – 4,0 – mJ
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,0 – nF
UL recognized file no. E63532
Rthjh per IGBT – – 1,4 K/W
Diode 2) - Inverter & Chopper • specification of shunts and
VF = VEC IF = 15 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V temperature sensor see part A
VTO Tj = 125 °C – 1,0 1,2 V • common characteristics see
rT Tj = 125 °C – 53 73 mΩ page B 16 – 4
IRRM IF = 15 A, VR = – 600 V – 16 – A
Qrr diF/dt = – 400 A/µs – 2,7 – µC 1)
Eoff VGE = 0 V, Tj = 125 °C – 0,6 – mJ Theatsink = 25 °C, unless
Rthjh per diode – – 1,7 K/W otherwise specified
2) CAL = Controlled Axial Lifetime
Diode - Rectifier Technology (soft and fast
VF IF = 35 A, Tj = 25 °C – 1,2 – V recovery)
3)
Rthjh per diode – – 1,6 K/W With integrated DC and/or AC
shunts
Temperature Sensor 4) accuracy of pure shunt, please
RTS T = 25 / 100 °C 1000 / 1670 Ω note that for DC shunt no
Shunts (SKiiP 22 NAB 12 I) separate sensing contact is
Rcs(dc) 5 % 4) 16,5 mΩ used.
Rcs(ac) 1% 10 mΩ
Mechanical Data
case to heatsink, SI Units 2 – 2,5 Nm
M1 mechanical outline see page M2
Case B 16 – 8

© by SEMIKRON 000131 B 16 – 53
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

22NA1204.xls
22NA1203.xls
5 5
Tj = 125 °C Tj = 125 °C
mWs mWs
VCE = 600 V VCE = 600 V
Eon
4 VGE = ± 15 V 4 VGE = ± 15 V
RG = 52 Ω IC = 15 A
3 3 Eon

Eoff
2 2
Eoff

1 1
E E

0 0
0 IC 10 20 A 30 0 RG 50 100 Ω 150

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)

ICpuls = 15 A VGE = 0 V
f = 1 MHz

Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. VCE

B 16 – 54 000131 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH

8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

B 16 – 4 0698 © by SEMIKRON
MiniSKiiP 2
+rect +B +DC I+

SKiiP 20 NAB 06 ... Circuit g1 g3 g5

L1
SKiiP 21 NAB 06 ... Case M2 L2 B +T -T
U
V
SKiiP 20 NAB 12 ... Layout and connections for the L3 W

gB
SKiiP 22 NAB 12 ... customer’s printed circuit board g2 g4 g6
Hauptanschluß
Isu Isv Isw power connector
Note: The shunts are available 0u 0v 0w
Steueranschluß
control pin
only by option I -rect -B -DC -DC/A
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