Modelando el Transistor Bipolar

Algunas de las figuras de esta presentacin fueron tomadas de las pginas de internet de los autores de los textos: A.S. Sedra and K.C. Smith, Microelectronic Circuits. New York, NY: Oxford University Press, 1998. A.R. Hambley, Electronics: A Top-Down Approach to Computer-Aided Circuit Design. Englewood Cliffs, NJ: Prentice Hall, 2000. R.C. Jager, Microelectronic Circuit Design. New York, NY: McGraw Hill, 1997. Dr. J.E. Rayas Snchez
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Estructura del BJT NPN

+
+ n

tor lec l Co n+

n
p

ep ita xy

i Em
iC

tte

+ n

n +
i
E

se Ba n
i
B

xy + ita p ep

+ bu rie dl ay er p

Active Transistor Region p

+ p p

Dr. J.E. Rayas Snchez

Seccin Transversal de la Estructura del BJT

C Emitter-Base Junction iE iC p n Base Collector Active Base Region E B Collector-Base Junction

iB

Emitter

Dr. J.E. Rayas Snchez

Estructura Simplificada del BJT NPN

Dr. J.E. Rayas Snchez

Estructura Simplificada del BJT PNP

Dr. J.E. Rayas Snchez

Operacin en la Regin Activa

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Operacin en la Regin Activa (cont.)

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Portadores Minoritarios en la Base y el Emisor

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Modelos del BJT en Seal Grande

iC = iB

iC iC iE = iB (1 + ) = = /(1 + )

IS v iB = e
iC = I S e v

BE

/ VT

BE

/ VT

iE =

IS v e

BE

/ VT

Dr. J.E. Rayas Snchez

Modelos del BJT en Seal Grande (cont.)

IS v iB = e
iC = I S e v

BE

/ VT

BE

/ VT

IS v iE = e
Dr. J.E. Rayas Snchez

BE

/ VT

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Modelos del BJT en Seal Grande (cont.)

iC = iB

iC iC iE = iB (1 + ) = = /(1 + )

IS v iB = e
iC = I S e v

EB

/ VT

EB

/ VT

IS v iE = e

EB

/ VT

Dr. J.E. Rayas Snchez

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Modelos del BJT en Seal Grande (cont.)

IS v iB = e
iC = I S e v

EB

/ VT

EB

/ VT

IS v iE = e
Dr. J.E. Rayas Snchez

EB

/ VT

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El BJT como Fuente de Corriente Controlada

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El BJT como Fuente de Corriente Controlada

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Efecto Early

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Efecto Early (Modulacin del Ancho de la Base)

Emitter N Base P N W' W Space Charge Region Widths v
CB1

Collector

CB2

> v

CB1

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Modelando el Efecto Early

NPN VCE v )e iC = I S (1 + VA VA Voltaje Early
BE

PNP
/ VT

VEC v )e iC = I S (1 + VA

EB

/ VT

Dr. J.E. Rayas Snchez

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Modelos Simplificados para la Regin Activa

Dr. J.E. Rayas Snchez

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Modelos Simplificados para Saturacin

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Modelos Simplificados para Corte

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Regiones de Operacin del BJT

TABLE 5.2 - Regions of Operation of the Bipolar Transistor Base-Emitter Junction Base-Collector Junction Forward Bias Reverse Bias Forward-Active Region (Normal-Active Region) (Good Amplifier)

Saturation Region Forward Bias (Closed Switch) Reverse-Active Region (Inverse-Active Region) (Poor Amplifier)
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Cutoff Region (Open Switch)

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Reverse Bias

Modelo de Ebers-Moll

iDE = I SE (e v iDC = I SC (e v

BE

/ VT

1) 1)

BC

/ VT

Dr. J.E. Rayas Snchez

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Modelo de Transporte
IS v (e iB = F
iT = I S (e v
BE BE

/ VT

IS v 1) + (e R
BC

BC

/ VT

1)

/ VT

1) + I S (e v

/ VT

1)

Dr. J.E. Rayas Snchez

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Regin Activa VS Regin Inversa

C o l l e c t o r C u r r e n t 1.0mA 3.0mA Saturation Region Forward-Active Region I = 100 uA B

2.0mA

I = 80 uA B

I = 60 uA B

I B = 40 uA

I = 20 uA B

I = 0 uA B 0.0mA Cutoff

Reverse-Active Region

Saturation Region 0V 5V

= 25 = 5
F R 10V 24

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-1.0mA -5V

V CE

Modelos del BJT para Seal Pequea

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Modelos del BJT para Seal Pequea (cont.)

r =

gm

IC gm = VT

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Modelos del BJT para Seal Pequea (cont.)

B r v gmv E r C
IC gm = VT

r = gm
VA ro = IC

VA: Voltaje Early

Dr. J.E. Rayas Snchez
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Modelos del BJT para Seal Pequea (cont.)

Dr. J.E. Rayas Snchez

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