Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM75GD120DLC

Hchstzulssige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage

Kollektor-Dauergleichstrom TC = 80 C IC,nom. 75 A
DC-collector current TC = 25 C IC 125 A

Periodischer Kollektor Spitzenstrom

tP = 1 ms, TC = 80C ICRM 150 A
repetitive peak collector current

Gesamt-Verlustleistung
TC=25C, Transistor Ptot 500 W
total power dissipation

Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Dauergleichstrom
IF 75 A
DC forward current

Periodischer Spitzenstrom
tP = 1 ms IFRM 150 A
repetitive peak forw. current

Grenzlastintegral der Diode 2

2 VR = 0V, t p = 10ms, T Vj = 125C I t 1,19 kA2s
I t - value, Diode

Isolations-Prfspannung
RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
insulation test voltage

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Kollektor-Emitter Sttigungsspannung IC = 75A, V GE = 15V, Tvj = 25C VCE sat - 2,1 2,6 V
collector-emitter saturation voltage IC = 75A, V GE = 15V, Tvj = 125C - 2,4 2,9 V

Gate-Schwellenspannung
IC = 3mA, V CE = VGE, Tvj = 25C VGE(th) 4,5 5,5 6,5 V
gate threshold voltage

Gateladung
VGE = -15V...+15V QG - 0,8 - C
gate charge

Eingangskapazitt
f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 5,1 - nF
input capacitance

Rckwirkungskapazitt
f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - 0,33 - nF
reverse transfer capacitance

Kollektor-Emitter Reststrom VCE = 1200V, V GE = 0V, Tvj = 25C ICES - 3 92 A

collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125C - 300 - A

Gate-Emitter Reststrom
VCE = 0V, V GE = 20V, Tvj = 25C IGES - - 400 nA
gate-emitter leakage current

prepared by: Mark Mnzer date of publication: 09.09.1999

approved by: M. Hierholzer revision: 2

1(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.
Einschaltverzgerungszeit (ind. Last) IC = 75A, V CC = 600V
turn on delay time (inductive load) VGE = 15V, R G = 10, Tvj = 25C td,on - 0,05 - s

VGE = 15V, R G = 10, Tvj = 125C - 0,06 - s

Anstiegszeit (induktive Last) IC = 75A, V CC = 600V

rise time (inductive load) VGE = 15V, R G = 10, Tvj = 25C tr - 0,05 - s

VGE = 15V, R G = 10, Tvj = 125C - 0,05 - s

Abschaltverzgerungszeit (ind. Last) IC = 75A, V CC = 600V

turn off delay time (inductive load) VGE = 15V, R G = 10, Tvj = 25C td,off - 0,3 - s

VGE = 15V, R G = 10, Tvj = 125C - 0,35 - s

Fallzeit (induktive Last) IC = 75A, V CC = 600V

fall time (inductive load) VGE = 15V, R G = 10, Tvj = 25C tf - 0,05 - s

VGE = 15V, R G = 10, Tvj = 125C - 0,07 - s

Einschaltverlustenergie pro Puls IC = 75A, V CC = 600V, V GE = 15V

turn-on energy loss per pulse RG = 10, Tvj = 125C, LS = 60nH Eon - 7,5 - mWs

Abschaltverlustenergie pro Puls IC = 75A, V CC = 600V, V GE = 15V

turn-off energy loss per pulse RG = 10, Tvj = 125C, LS = 60nH Eoff - 9 - mWs

Kurzschluverhalten tP 10sec, V GE 15V, R G = 10

SC Data TVj125C, V CC=900V, V CEmax=VCES -LsCE dI/dt ISC - 540 - A

Modulinduktivitt
LsCE - 25 - nH
stray inductance module

Modul Leitungswiderstand, Anschlsse Chip

TC=25C RCC+EE - 1,8 - m
module lead resistance, terminals chip

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.
Durchlaspannung IF = 75A, V GE = 0V, Tvj = 25C VF - 1,8 2,3 V
forward voltage IF = 75A, V GE = 0V, Tvj = 125C - 1,7 2,2 V

Rckstromspitze IF = 75A, - di F/dt = 2000A/sec

peak reverse recovery current VR = 600V, VGE = -15V, T vj = 25C IRM - 85 - A
VR = 600V, VGE = -15V, T vj = 125C - 105 - A

Sperrverzgerungsladung IF = 75A, - di F/dt = 2000A/sec

recovered charge VR = 600V, VGE = -15V, T vj = 25C Qr - 9 - As

VR = 600V, VGE = -15V, T vj = 125C - 16,5 - As

Abschaltenergie pro Puls IF = 75A, - di F/dt = 2000A/sec

reverse recovery energy VR = 600V, VGE = -15V, T vj = 25C Erec - 3 - mWs
VR = 600V, VGE = -15V, T vj = 125C - 6,2 - mWs

2(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Thermische Eigenschaften / Thermal properties

min. typ. max.
Innerer Wrmewiderstand Transistor / transistor, DC RthJC - - 0,25 K/W
thermal resistance, junction to case Diode/Diode, DC - - 0,55 K/W

bergangs-Wrmewiderstand pro Modul / per module

RthCK - 0,009 - K/W
thermal resistance, case to heatsink Paste = 1 W/m * K / grease = 1 W/m * K

Hchstzulssige Sperrschichttemperatur
Tvj - - 150 C
maximum junction temperature

Betriebstemperatur
Top -40 - 125 C
operation temperature

Lagertemperatur
Tstg -40 - 150 C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Gehuse, siehe Anlage

case, see appendix

Innere Isolation
AL2O3
internal insulation

CTI
225
comperative tracking index

Anzugsdrehmoment f. mech. Befestigung screw M5 M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlsse Nm

terminal connection torque

Gewicht
G 300 g
weight

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) V GE = 15V

150

125 Tj = 25C
Tj = 125C

100
IC [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

VCE [V]

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) T vj = 125C

150

125 VGE = 17V

VGE = 15V
VGE = 13V
100 VGE = 11V
VGE = 9V
VGE = 7V
IC [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VCE [V]

4(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

bertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

150

125 Tj = 25C
Tj = 125C

100
IC [A]

75

50

25

0
5 6 7 8 9 10 11 12

VGE [V]

Durchlakennlinie der Inversdiode (typisch) IF = f (VF)

Forward characteristic of inverse diode (typical)

150

125 Tj = 25C
Tj = 125C

100
IF [A]

75

50

25

0
0,0 0,5 1,0 1,5 2,0 2,5 3,0

VF [V]

5(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = Rgoff = 10 , VCE = 600V, T j = 125C
24

Eoff
20 Eon
Erec

16
E [mJ]

12

0
0 25 50 75 100 125 150
IC [A]

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , I C = 75A , VCE = 600V , T j = 125C

30

Eoff
25 Eon
Erec

20
E [mJ]

15

10

0
0 5 10 15 20 25 30 35 40 45 50 55 60

]
RG [

6(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Transienter Wrmewiderstand ZthJC = f (t)

Transient thermal impedance
1

0,1
[K / W]
ZthJC

0,01 Zth:Diode
Zth:IGBT

0,001
0,001 0,01 0,1 1 10 100

t [sec]

i 1 2 3 4
ri [K/kW] : IGBT 27,96 84,63 110,28 27,13
i [sec] : IGBT 0,002 0,03 0,066 1,655
ri [K/kW] : Diode 71,97 190,64 207,99 79,40
i [sec] : Diode 0,002 0,03 0,072 0,682

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 10 Ohm, T vj= 125C

180

150

120
IC [A]

IC,Modul
IC,Chip
90

60

30

0
0 200 400 600 800 1000 1200 1400

VCE [V]

7(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC

Econo 3
118.11
94.5

119

121.5
99.9
4 x 19.05 = 76.2
19.05 3.81

19 18 17 16 15

1 2 3 4 5 6 7 8 9 10 11 12

3.81 1.15x1.0
15.24
5 x 15.24 =76.2
110
connections to be made externally
P+ / 21 P+ / 13

1 5 9
2 6 10
19
17
15

3 7 11
4 8 12
N- / 20 N- / 14

IS8

8(8) Seriendatenblatt_BSM75GD120DLC1.xls