Amplificador de potencia: clase B

Retroalimentado
Andrés Camilo Montero Romero
Miguel Antonio Otero Pacheco
Kevin Santiago Saldaña Campuzano

SENA

acmontero74@misena.edu.co, maotero30@misena.edu.co, ssantiagosaldana123@gmail.com

RESUMEN: En este informe se evidenció los

resultados de la práctica del amplificador de potencia
clase B retroalimentado. Se realizo un montaje con una
configuración para realizar el análisis, buscando
determinar sus características propias.

I. INTRODUCCIÓN

El amplificador de potencia de retroalimentación tiene

múltiples, configuración que poseen características
propias, como lo pueden ser la eficiencia, afectación de la
distorsión, problemas de cruces por cero, respuesta a la
frecuencia, etc.
La intención de la siguiente práctica es determinar un
análisis y comparación entre las configuraciones más
efectivas de los amplificadores de potencia en su estructura
más básica, Clase B.
Se realizo el los montaje propuesto que respondían a un
modelo de amplificador Clase B. El cual posee una señal
de entrada específica
y se analiza la respuesta del circuito y la respuesta en
frecuencia del circuito para determinar sus características.
CLASE B
Fig. 1 – Plano del montaje
II. MARCO TEÓRICO
Inicialmente se realizó el montaje y análisis de la
respuesta en frecuencia de un circuito amplificador de
potencia Clase B. El plano del montaje se ve
representado en la Fig. 1.
Amplificadores de clase B: un amplificador de potencia
funciona en clase B cuando la tensión de polarización y
la amplitud máxima de la señal de entrada poseen
valores tales que hacen que la corriente de salida circule
durante un semiperíodo de la señal de entrada.
Amplificador Clase B

OBJETIVOS

• Identificar los diferentes tipos de realimentación, Directa

o indirecta.
• Tener conocimientos para implementar y hacer un
montaje de un circuito en proteus y físico.
• Aprender a como realimentar el circuito.
 amplificador

III. MONTAJE EXPERIMENTAL

Fig. 5 – Diagrama electrónico

Fig. 2 – Diagrama electrónico
Materiales implementados en la práctica de
laboratorio:
RESISTENCIAS ➢ 100K Ω, 220Ω, 330Ω y de 1K Ω
POTENCIOMETRO ➢ 100K Ω.
CONDESADORES ➢ 220µF,1000µF,100nF
TRANSISTORES ➢ BC548B ➢ 2N3906
LEDS ROJO
PARLANTE 8Ω
Fuente DC 9V
OSCILOSCOPIO

Fig. 3 – Montaje en la protoboard

Estos amplificadores no son usados comúnmente

para audio. En los amplificadores clase B o
retroalimentados los transistores no están
polarizados a su región activa todo el tiempo. Esto
significa que la parte de la señal que cae dentro de
la ventana de los 0.6 voltios requeridos para
encender los transistores no será reproducida
fielmente. Fig. 6 – Simulación amplificador clase B
Esta región de la señal que no se puede reproducir
fielmente se le conoce como “crossover distortion”
Amplificador Clase B

Fig. 7 – Simulación señal de entrada y señal de salida

Fig. 4 – Grafica señal de entrada y salida
Link de las simulaciones.
https://www.youtube.com/watch?v=cFbjAsxtd2o
https://www.youtube.com/watch?v=JM8eof2yvpE
IV. RESULTADOS
Al realizar la simulación del circuito, se puede
determinar una respuesta en frecuencia como se observa
en la Fig. 8.
Al realizar el montaje y medición de la respuesta en
frecuencia del Amplificador B (Fig.8), se obtuvieron
los siguientes resultados y comportamientos:
Se aclara que la señal azul es la entrada y la señal
amarilla es la salida.
V. ANÁLISIS DE RESULTADOS
Cuando la señal de entrada presenta un valor de cero
voltios es totalmente comprensible que la señal de
salida tenga un valor igual, debido a que la
configuración que presenta el circuito, nos proporciona
un valor teórico de aproximadamente.

Fig. 8 - Respuesta en frecuencia de la simulación

Clase B.
Se procede a obtener la respuesta del circuito para
determinar su comportamiento y características.
Como se puede observar en el siguiente oscilograma,
la señal de entrada presenta un cambio a la salida del
circuito. Debido a la pequeña ganancia de voltaje y la
distorsión producida por el efecto del voltaje umbral de
los diodos presentes en los dos transistores

Fig. 10 – Señal de entrada y señal de salida.

Fig. 9 - Salida del amplificador Clase B.

Se puede observar en la Fig. 9 que el circuito tiene el
comportamiento esperado de un amplificador clase B.
Esto debido a que la señal de salida (azul) presenta la
típica distorsión de paso por cero de este tipo de
amplificadores la cual se puede ver como una ventaja
puesto que si no existe una señal de entrada el
amplificador no consume.
Además, esta distorsión solo en un problema cuando la
amplificación no es muy grande puesto que en señales
de salida lo suficientemente grandes este problema es
imperceptible.
 VI. CONCLUSIONES:

En la práctica realizada mediante la

implementación del circuito de amplificación tipo
B y la ayuda de un osciloscopio se puede
obtenerlos valores de entrada y de salida, así
comprobamos la eficiencia que es
considerablemente alta, tal y como está escrito en
los textos sobre este tipo de amplificador de
potencia.

El amplificador clase B presenta una distorsión de

paso por cero que puede ser ignorada si la señal de
salida es lo suficientemente grande.

La principal ventaja del amplificador clase B es

que no presenta consumo cuando no hay señal de
entrada.

El amplificador de potencia clase B funciona de

manera similar a un amplificador en colector
común por tal razón la ganancia del circuito en
voltaje es muy baja, pero en corriente es muy alta.

Además, este amplificador tiene un mejor

rendimiento que el amplificador clase B ya que no
disipa potencia a través de resistencias adicionales
conectadas en el circuito.

El amplificador clase B es fácil de implementar

prácticamente, con lo cual sus aplicaciones son
muy diversas y muy útiles en la industria,
además, por el hecho de contener pocos
elementos electrónicos también representa
ahorro en costos de fabricación

REFERENCIAS

[1] http://www.ecured.cu/Amplificador_Clase_B
[2]Robert L. Boylestad “Electrónica: Teoría de
Circuitos y Dispositivos Electrónicos” (10ma
edición).
[3]Malvino “Principios de electrónica” (6ta edición)
[4] Jacob Millman “Dispositivos y Circuitos
Electrónicos”
[5] Aguilar Peña, Valero Solas “Amplificadores De
potencia: Teoría y problemas”.
ACLARACIONES ADICIONALES:

1. Los valores para las márgenes del documento son los siguientes:
Superior: 1.9cm
Inferior: 2.5cm
Izquierdo-derecho: 1.7cm
El formato es a dos columnas con un espacio entre ellas de:
No. Observaciones
Obs. 1 Obs. 2 Obs.3 Obs. 4
1
2
3
2. Espacio entre columnas: 0.5cm
3. Todos los párrafos deben estar justificados.
4. Para el tamaño de letra en el documento:
Titulo: 24 puntos
Nombres de los autores: 11 puntos
Universidad y Correos electrónicos: 9 puntos
Documento: 11 puntos
5. La bibliografía debe incluir la siguiente información: autor(es), título del libro o artículo, edición,
nombre de la revista (para artículos), editorial, año de publicación. Si es una dirección en internet, debe ir
el URL completo.
6. Es importante que las figuras, tablas y referencias se mencionen en el texto entre corchetes, de lo
contrario, la referencia no tendrá validez.
7. Todos los valores deben incluir su respectiva incertidumbre.

SENA -CEET.

Coordinación Electrónica
 Q2
2N3906
C1(1)
RV1
Q1
BC548BP A

C
1k
R3 D
1k
R1
220R
C3

100n
C1 R2 R4
1000u 100k 330 LS1
D1
LED-RED

SPEAKER
C2
220u
    Order this document
SEMICONDUCTOR TECHNICAL DATA by BC546/D

 


NPN Silicon

  

  

COLLECTOR
1

2
BASE

3
EMITTER
1
MAXIMUM RATINGS 2
3
BC BC BC
Rating Symbol 546 547 548 Unit CASE 29–04, STYLE 17
Collector – Emitter Voltage VCEO 65 45 30 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO 80 50 30 Vdc

Emitter – Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V
(IC = 1.0 mA, IB = 0) BC547 45 — —
BC548 30 — —
Collector – Base Breakdown Voltage BC546 V(BR)CBO 80 — — V
(IC = 100 µAdc) BC547 50 — —
BC548 30 — —
Emitter – Base Breakdown Voltage BC546 V(BR)EBO 6.0 — — V
(IE = 10 mA, IC = 0) BC547 6.0 — —
BC548 6.0 — —
Collector Cutoff Current ICES
(VCE = 70 V, VBE = 0) BC546 — 0.2 15 nA
(VCE = 50 V, VBE = 0) BC547 — 0.2 15
(VCE = 35 V, VBE = 0) BC548 — 0.2 15
(VCE = 30 V, TA = 125°C) BC546/547/548 — — 4.0 µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996


  

  

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 10 µA, VCE = 5.0 V) BC547A/548A — 90 —
BC546B/547B/548B — 150 —
BC548C — 270 —

(IC = 2.0 mA, VCE = 5.0 V) BC546 110 — 450

BC547 110 — 800
BC548 110 — 800
BC547A/548A 110 180 220
BC546B/547B/548B 200 290 450
BC547C/BC548C 420 520 800

(IC = 100 mA, VCE = 5.0 V) BC547A/548A — 120 —

BC546B/547B/548B — 180 —
BC548C — 300 —

Collector – Emitter Saturation Voltage VCE(sat) V

(IC = 10 mA, IB = 0.5 mA) — 0.09 0.25
(IC = 100 mA, IB = 5.0 mA) — 0.2 0.6
(IC = 10 mA, IB = See Note 1) — 0.3 0.6
Base – Emitter Saturation Voltage VBE(sat) — 0.7 — V
(IC = 10 mA, IB = 0.5 mA)
Base–Emitter On Voltage VBE(on) V
(IC = 2.0 mA, VCE = 5.0 V) 0.55 — 0.7
(IC = 10 mA, VCE = 5.0 V) — — 0.77

SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product fT MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 —
BC547 150 300 —
BC548 150 300 —
Output Capacitance Cobo — 1.7 4.5 pF
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance Cibo — 10 — pF
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small–Signal Current Gain hfe —
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 125 — 500
BC547/548 125 — 900
BC547A/548A 125 220 260
BC546B/547B/548B 240 330 500
BC547C/548C 450 600 900
Noise Figure NF dB
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, BC546 — 2.0 10
f = 1.0 kHz, ∆f = 200 Hz) BC547 — 2.0 10
BC548 — 2.0 10
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



  

  

2.0 1.0
VCE = 10 V TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN 1.5 0.9
TA = 25°C
0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 0.7
0.8 0.6 VBE(on) @ VCE = 10 V

0.6 0.5
0.4
0.4 0.3

0.3 0.2
VCE(sat) @ IC/IB = 10
0.1
0.2 0
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

2.0 1.0
VCE , COLLECTOR–EMITTER VOLTAGE (V)

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C –55°C to +125°C
1.2
1.6
IC = 200 mA
1.6
1.2
IC = IC = IC = 50 mA IC = 100 mA
2.0
10 mA 20 mA
0.8
2.4

0.4
2.8

0
0.02 0.1 1.0 10 20 0.2 1.0 10 100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient

BC547/BC548
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

10 400
300
7.0 TA = 25°C
200
C, CAPACITANCE (pF)

5.0 Cib

VCE = 10 V
100
3.0 TA = 25°C
80
Cob
60
2.0
40
30

1.0 20
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3



  

  

BC547/BC548

1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TA = 25°C
VCE = 5 V
TA = 25°C 0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
0.6
VBE @ VCE = 5.0 V
1.0
0.4
0.5

0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 –1.0

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

TA = 25°C
1.6 –1.4
20 mA 50 mA 100 mA 200 mA
1.2 –1.8
θVB for VBE
IC = –55°C to 125°C
0.8 –2.2
10 mA

0.4 –2.6

0 –3.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient

BC546

40
f T, CURRENT–GAIN – BANDWIDTH PRODUCT

TA = 25°C VCE = 5 V
500 TA = 25°C
20
C, CAPACITANCE (pF)

Cib
200

10
100

6.0 50

4.0 Cob
20

2.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data



  

  

PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5



  

  

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 
◊ BC546/D
2N3906

General Purpose
Transistors
PNP Silicon

http://onsemi.com
Features
• Pb−Free Packages are Available* COLLECTOR
3

2
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 1
Collector − Emitter Voltage VCEO 40 Vdc EMITTER

Collector − Base Voltage VCBO 40 Vdc

Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC 200 mAdc TO−92
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29
Derate above 25°C 5.0 mW/°C STYLE 1

Total Power Dissipation @ TA = 60°C PD 250 mW

12 1
2
Total Device Dissipation @ TC = 25°C PD 1.5 W 3 3
Derate above 25°C 12 mW/°C STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range AMMO PACK

THERMAL CHARACTERISTICS (Note 1)

Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
2N
Stresses exceeding Maximum Ratings may damage the device. Maximum 3906
Ratings are stress ratings only. Functional operation above the Recommended
ALYWG
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. G
1. Indicates Data in addition to JEDEC Requirements.

A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

February, 2010 − Rev. 4 2N3906/D
 2N3906

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 40 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 60 − −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 80 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 −
Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.25 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc − 0.4

Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) 0.65 0.85 Vdc
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95

SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10 pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 2.0 12 kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10− 4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 100 400 −
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos
Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td − 35 ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 ns
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) ts − 225 ns
Fall Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 75 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.

http://onsemi.com
2
 2N3906

ORDERING INFORMATION
Device Package Shipping†
2N3906 TO−92 5000 Units / Bulk
2N3906G TO−92 5000 Units / Bulk
(Pb−Free)

2N3906RL1 TO−92 2000 / Tape & Reel

2N3906RL1G TO−92 2000 / Tape & Reel
(Pb−Free)

2N3906RLRA TO−92 2000 / Tape & Reel

2N3906RLRAG TO−92 2000 / Tape & Reel
(Pb−Free)

2N3906RLRM TO−92 2000 / Tape & Ammo Box

2N3906RLRMG TO−92 2000 / Tape & Ammo Box
(Pb−Free)

2N3906RLRP TO−92 2000 / Tape & Ammo Box

2N3906RLRPG TO−92 2000 / Tape & Ammo Box
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

3V

275
< 1 ns
+0.5 V 10 k

CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Equivalent Test Circuit

3V
+9.1 V < 1 ns

275

10 k
0

1N916 CS < 4 pF*

10 < t1 < 500 ms

t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 2. Storage and Fall Time Equivalent Test Circuit

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3
 2N3906

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn −On Time Figure 6. Fall Time

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4
 2N3906

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0 IC = 0.5 mA
SOURCE RESISTANCE = 200 W
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 7. Figure 8.

h PARAMETERS
(VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

70

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

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5
 2N3906

TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125°C VCE = 1.0 V

1.0 +25°C

0.7
-55°C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/ °C)

TJ = 25°C VBE(sat) @ IC/IB = 10

0.5 +25°C TO +125°C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 -55°C TO +25°C

-0.5
0.4 +25°C TO +125°C
-1.0
VCE(sat) @ IC/IB = 10 -55°C TO +25°C
0.2 qVB FOR VBE(sat)
-1.5

0 -2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. “ON” Voltages Figure 16. Temperature Coefficients

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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
SCALE 1:1 ISSUE AM
DATE 09 MAR 2007

12 1
2
3 3
STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
AMMO PACK

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

NOTES:
A B BENT LEAD
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
MILLIMETERS
SEATING
PLANE K DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
X X D G 2.40 2.80
J 0.39 0.50
G K 12.70 ---
J N 2.04 2.66
V P 1.50 4.00
C R 2.93 ---
V 3.43 ---
SECTION X−X
1 N

STYLES ON PAGE 2

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 1 PAGE 1 OFXXX3
 TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

PIN 1. EMITTER PIN 1. BASE PIN 1. ANODE PIN 1. CATHODE PIN 1. DRAIN
2. BASE 2. EMITTER 2. ANODE 2. CATHODE 2. SOURCE
3. COLLECTOR 3. COLLECTOR 3. CATHODE 3. ANODE 3. GATE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:

PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN PIN 1. BASE 1 PIN 1. CATHODE
2. SOURCE & SUBSTRATE 2. DRAIN 2. GATE 2. EMITTER 2. GATE
3. DRAIN 3. GATE 3. SOURCE & SUBSTRATE 3. BASE 2 3. ANODE

STYLE 11: STYLE 12: STYLE 13: STYLE 14: STYLE 15:
PIN 1. ANODE PIN 1. MAIN TERMINAL 1 PIN 1. ANODE 1 PIN 1. EMITTER PIN 1. ANODE 1
2. CATHODE & ANODE 2. GATE 2. GATE 2. COLLECTOR 2. CATHODE
3. CATHODE 3. MAIN TERMINAL 2 3. CATHODE 2 3. BASE 3. ANODE 2

STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. ANODE PIN 1. COLLECTOR PIN 1. ANODE PIN 1. GATE PIN 1. NOT CONNECTED
2. GATE 2. BASE 2. CATHODE 2. ANODE 2. CATHODE
3. CATHODE 3. EMITTER 3. NOT CONNECTED 3. CATHODE 3. ANODE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25:
PIN 1. COLLECTOR PIN 1. SOURCE PIN 1. GATE PIN 1. EMITTER PIN 1. MT 1
2. EMITTER 2. GATE 2. SOURCE 2. COLLECTOR/ANODE 2. GATE
3. BASE 3. DRAIN 3. DRAIN 3. CATHODE 3. MT 2

STYLE 26: STYLE 27: STYLE 28: STYLE 29: STYLE 30:
PIN 1. VCC PIN 1. MT PIN 1. CATHODE PIN 1. NOT CONNECTED PIN 1. DRAIN
2. GROUND 2 2. SUBSTRATE 2. ANODE 2. ANODE 2. GATE
3. OUTPUT 3. MT 3. GATE 3. CATHODE 3. SOURCE

STYLE 31: STYLE 32: STYLE 33: STYLE 34: STYLE 35:
PIN 1. GATE PIN 1. BASE PIN 1. RETURN PIN 1. INPUT PIN 1. GATE
2. DRAIN 2. COLLECTOR 2. INPUT 2. GROUND 2. COLLECTOR
3. SOURCE 3. EMITTER 3. OUTPUT 3. LOGIC 3. EMITTER

DOCUMENT NUMBER: 98ASB42022B Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number:
October, DESCRIPTION:
2002 − Rev. 0 TO−92 (TO−226) 2 PAGE 2 OFXXX3
 DOCUMENT NUMBER:
98ASB42022B

PAGE 3 OF 3

ISSUE REVISION DATE

AM ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. 09 MAR 2007

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

© Semiconductor Components Industries, LLC, 2007 Case Outline Number:

March, 2007 − Rev. 11AM 29
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