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Breve Introducción al
Amplificador Operacional
(y a la amplificación de señales eléctricas)
Tecnología IV y V – Cátedra B
Agosto de 2009
1-Introducción
Vd = V p − Vn
V p + Vn (1)
Vc =
2
V0 = Ad Vd + AcVc (2)
Ad Ad
CMRR = , o bien: CMRR(dB) = 20 ⋅ log (3)
Ac Ac
1 Vc
V0 = Ad Vd (1 + ) (4)
CMRR Vd
1) Resistencia de entrada ∞.
2) Resistencia de salida 0.
3) Ganancia en tensión en modo diferencial ∞.
4) Ganancia en tensión en modo común 0 (CMRR=∞).
5) Corrientes de entrada nulas (Ip=In=0).
6) Ancho de banda ∞.
7) Ausencia de desviación en las características con la temperatura.
Por otra parte, las características 3) y 4) aplicadas a la ecuación (2) crean una
indeterminación, ya que al ser Ad=∞, Vo=AdVd debería ser también infinito. Sin embargo,
esa indeterminación se resuelve cuando Vd=0; el producto AdVd da como resultado un
valor finito. Por ello, la entrada del OA ideal tiene corrientes de polarización nulas (Ip=In=0)
y verifica que Vp=Vn (en el caso de realimentación negativa).
Este modelo simplifica mucho el análisis de circuitos basados en el OA. El modelo del OA
ideal sólo es un concepto idealizado del OA real que sin embargo resulta muy práctico y
se acerca con mucha exactitud al comportamiento real de estos circuitos.
Vi − Vn V0 − Vn
= (5)
R1 R2
Como hemos visto, en el OA ideal Vn=Vp. Pero en este caso Vp=0, y luego Vn=0, por lo
que a este nudo se lo denomina masa virtual. Si Vn=0, sustituyendo en la ecuación (5)
resulta que la ganancia vale
V0 R
A = =− 2
Vi R1
El término inversor es debido al signo negativo de esta expresión que indica un desfasaje
de 180º entre la entrada y salida. La impedancia de entrada de este circuito es R1.
R1
Vn = V0
R1 + R2
Vn = V p = Vi
de lo que resulta
V0 R
A = = 1+ 2
Vi R1
Por ejemplo, el 741 tiene las siguientes características: Ad=200.000, Ri=1MΩ y Ro=75Ω.
Aplicando las anteriores relaciones, se obtiene que las impedancias de entrada y salida
del seguidor valen Zi=2 1010Ω y Zo=3.7 10-4Ω.
N
Vi
V0 = − R f (V1 / R1 + V2 / R2 + V3 / R3 + ...) = − R f ∑
i =1 Ri
R R4 R2
V0 = 1 + 2 V2 − V1
R1 R3 + R4 R1 + R2
R4 R2
=
R3 R1
R2
V0 = (V2 − V1 )
R1
∂V
I =C
∂t
Al aplicar esta ecuación al circuito de la Figura 8-a) resulta que la tensión de salida es la
integral de una señal analógica a la entrada
1
RC ∫
V0 = − Vi (t ) ⋅ ∂t + cte
donde cte depende de la carga inicial del condensador. El circuito dual mostrado en la
Figura 8-b) implementa la ecuación diferencial
∂Vi
V0 = − RC
∂t
V0 V0
.. NO LATCH-UP
HIGH GAIN
. SHORT-CIRCUIT PROTECTION
NO FREQUENCY COMPENSATION
. REQUIRED
SAME PIN CONFIGURATION AS THE UA709
N D
DIP8 SO8
DESCRIPTION (Plastic Package) (Plastic Micropackage)
The UA741 is a high performance monolithic opera-
tional amplifier constructed on a single silicon chip.
..
It is intented for a wide range of analog applications.
Summing amplifier
.. Voltage follower
Integrator ORDER CODES
. Active filter
Function generator
The high gain and wide range of operating voltages
Part
Number
Temperature
Range N
Package
D
UA741C 0oC, +70oC • •
provide superior performances in integrator, sum- o o
UA741I -40 C, +105 C • •
ming amplifier and general feedback applications. o o
The internal compensationnetwork (6dB/octave)in- UA741M -55 C, +125 C • •
sures stability in closed loop circuits. Example : UA741CN
1 - Offset null 1
1 8 2 - Inverting input
3 - Non-inverting input
2 7 4 - VCC-
5 - Offset null 2
3 6
6 - Output
4 5 7 - VCC+
8 - N.C.
SCHEMATIC DIAGRAM
2/9
UA741
ELECTRICAL CHARACTERISTICS
VCC = ±15V ,Tamb = +25oC (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
Vio Input Offset Voltage (R S ≤ 10kΩ) mV
o
Tamb = +25 C 1 5
Tmin. ≤ Tamb ≤ Tmax. 6
Iio Input Offset Current nA
o
Tamb = +25 C 2 30
Tmin. ≤ Tamb ≤ Tmax. 70
Iib Input Bias Current nA
o
Tamb = +25 C 10 100
Tmin. ≤ Tamb ≤ Tmax. 200
Avd Large Signal Voltage Gain * V/mV
(VO ±10V, RL = 2kΩ)
o
Tamb = +25 C 50 200
Tmin. ≤ Tamb ≤ Tmax. 25
SVR Supply Voltage Rejection Ratio dB
(R S ≤ 10kΩ)
o
Tamb = +25 C 77 90
Tmin. ≤ Tamb ≤ Tmax. 77
ICC Supply Current, no load mA
o
Tamb = +25 C 1.7 2.8
Tmin. ≤ Tamb ≤ Tmax. 3.3
Vicm Input Common Mode Voltage Range V
o
Tamb = +25 C ±12
Tmin. ≤ Tamb ≤ Tmax. ±12
CMR Common-mode Rejection Ratio (RS ≤ 10kΩ) dB
o
Tamb = +25 C
Tmin. ≤ Tamb ≤ Tmax. 70 90
70
IOS Output Short-circuit Current mA
10 25 40
±VOPP Output Voltage Swing V
o
Tamb = +25 C RL = 10kΩ 12 14
RL = 2kΩ 10 13
Tmin. ≤ Tamb ≤ Tmax. RL = 10kΩ 12
RL = 2kΩ 10
SR Slew Rate V/µs
o
(Vi = ±10V, R L =2kΩ, C L= 100pF, Tamb = 25 C, unity gain) 0.25 0.5
tr Rise Time µs
o
(Vi = ±20mV, RL = 2kΩ, CL = 100pF, Tamb = 25 C, unity gain) 0.3
KOV Overshoot %
(Vi = 20mV, RL = 2kΩ, CL = 100pF, Tamb = 25oC, unity gain) 5
RI Input Resistance 0.3 2 MΩ
GBP Gain Bandwidth Product MHz
(Vi = 10mV, RL = 2kΩ, C L= 100pF, f = 100kHz) 0.7 1
THD Total Harmonic Distortion %
o
(f = 1kHz, AV = 20dB, RL =2kΩ, VO = 2VPP,CL = 100pF, Tamb = 25 C) 0.06
en Equivalent Input Noise Voltage nV
(f = 1kHz, R s = 100Ω) 23 √
Hz
∅m Phase Margin 50 Degrees
3/9
UA741
Millimeters Inches
Dim.
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
8/9
UA741
Millimeters Inches
Dim.
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
o
c1 45 (typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S 8o (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi-
bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes
and replaces all info rmation previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criti-
cal components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
9/9
a Low-Noise, Precision
Operational Amplifier
OP27
FEATURES PIN CONNECTIONS
Low Noise: 80 nV p-p (0.1 Hz to 10 Hz), 3 nV/÷Hz
TO-99
Low Drift: 0.2 V/C
(J-Suffix)
High Speed: 2.8 V/s Slew Rate, 8 MHz Gain
Bandwidth BAL
Low VOS: 10 V
Excellent CMRR: 126 dB at VCM of ±11 V BAL 1
OP27
V+
High Open-Loop Gain: 1.8 Million
Fits 725, OP07, 5534A Sockets –IN 2 OUT
SIMPLIFIED SCHEMATIC
V+
R3 R4 C2
1 8
Q6
Q22 Q46
VOS ADJ. C1
R1* R2* R23 R24
Q21
Q23 Q24
R9
Q20 Q19
Q1A Q1B Q2B Q2A R12 OUTPUT
NONINVERTING
R5 C3 C4
INPUT (+)
Q3
INVERTING Q26
Q11 Q12 Q45
INPUT (–)
Q27 Q28
V–
REV. C
–2– REV. C
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier
December 2003
LF353
Wide Bandwidth Dual JFET Input Operational Amplifier
General Description Features
These devices are low cost, high speed, dual JFET input n Internally trimmed offset voltage: 10 mV
operational amplifiers with an internally trimmed input offset n Low input bias current: 50pA
voltage (BI-FET II™ technology). They require low supply n Low input noise voltage: 25 nV/√Hz
current yet maintain a large gain bandwidth product and fast n Low input noise current: 0.01 pA/√Hz
slew rate. In addition, well matched high voltage JFET input n Wide gain bandwidth: 4 MHz
devices provide very low input bias and offset currents. The
n High slew rate: 13 V/µs
LF353 is pin compatible with the standard LM1558 allowing
n Low supply current: 3.6 mA
designers to immediately upgrade the overall performance of
existing LM1558 and LM358 designs. n High input impedance: 1012Ω
n Low total harmonic distortion : ≤0.02%
These amplifiers may be used in applications such as high
speed integrators, fast D/A converters, sample and hold n Low 1/f noise corner: 50 Hz
circuits and many other circuits requiring low input offset n Fast settling time to 0.01%: 2 µs
voltage, low input bias current, high input impedance, high
slew rate and wide bandwidth. The devices also exhibit low
noise and offset voltage drift.
00564917
00564914 Top View
Order Number LF353M, LF353MX or LF353N
See NS Package Number M08A or N08E
Simplified Schematic
1/2 Dual
00564916
DC Electrical Characteristics
(Note 5)
Symbol Parameter Conditions LF353 Units
MIn Typ Max
VOS Input Offset Voltage RS=10kΩ, TA=25˚C 5 10 mV
Over Temperature 13 mV
∆VOS/∆T Average TC of Input Offset Voltage RS=10 kΩ 10 µV/˚C
IOS Input Offset Current Tj=25˚C, (Notes 5, 6) 25 100 pA
Tj≤70˚C 4 nA
IB Input Bias Current Tj=25˚C, (Notes 5, 6) 50 200 pA
Tj≤70˚C 8 nA
RIN Input Resistance Tj=25˚C 10 12
Ω
AVOL Large Signal Voltage Gain VS= ± 15V, TA=25˚C 25 100 V/mV
VO= ± 10V, RL=2 kΩ
Over Temperature 15 V/mV
VO Output Voltage Swing VS= ± 15V, RL=10kΩ ± 12 ± 13.5 V
VCM Input Common-Mode Voltage VS= ± 15V ± 11 +15 V
Range −12 V
CMRR Common-Mode Rejection Ratio RS≤ 10kΩ 70 100 dB
PSRR Supply Voltage Rejection Ratio (Note 7) 70 100 dB
IS Supply Current 3.6 6.5 mA
AC Electrical Characteristics
(Note 5)
Symbol Parameter Conditions LF353 Units
Min Typ Max
Amplifier to Amplifier Coupling TA=25˚C, f=1 Hz−20 kHz −120 dB
(Input Referred)
SR Slew Rate VS= ± 15V, TA=25˚C 8.0 13 V/µs
GBW Gain Bandwidth Product VS= ± 15V, TA=25˚C 2.7 4 MHz
en Equivalent Input Noise Voltage TA=25˚C, RS=100Ω, 16
f=1000 Hz
in Equivalent Input Noise Current Tj=25˚C, f=1000 Hz 0.01
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