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Figure 1 . The confguration of a novel microstrip grid-array
antenna proposed by Nakano, who added two more short
sides to make an equal number of short sides (radiating
elements) in both the xand ] directions.
a travs de una abertura de di metro d en el pl ano de ti erra sobre
l a superf i ci e i nf eri or del sustrato. El radi ador de rej i l l a-matri z se
compone de mal l as rectangul ares l os l ados l argos de l as cual es
con una l ongi tud I y una anchura w / ' con l os l ados cortos de l a
l ongi tud y anchura s ws' Como seal a Kraus, en el
f unci onami ento de l a antena, l a adecuada el ecci n de l a
f recuenci a, l ongi tudes de ti erra s, y el punto de al i mentaci n
permi te que l a estructura de rej i l l a-array para operar ya sea
como un no resonante o una antena resonante. Este documento
se concentra en este l ti mo ti po, que requi ere que
aproxi madamente I = Ag and s = Ag /2 , donde Ag es l a l ongi tud
de onda gui ada en l a f recuenci a central de l a operaci n [8]. La
radi aci n es esenci al mente de corto l ados, con l os l ados l argos
actuando pri nci pal mente como gu a o de l neas de transmi si n.
Esto es debi do a l a corri ente en cada l ado corto es, bsi camente,
en f ase, mi entras que cada l ado l argo soporta una corri ente de
l ongi tud de onda compl eta. Con tal di stri buci n de corri ente, l a
radi aci n mxi ma ser a de costado a l a matri z. Assurne que l a
antena de rej i l l a de matri z de l a novel a de mi croci nta se hace
sobre un sustrato con un IC ' = 4, 5, bronceado 8 = 0. 002, a = 25
mm, b = 25 mm, y h = 0. 254 mm, con di mensi ones de mal l a de 1
mm = 2, 84, W / = 0. 1 mm, s = 1, 42 mm, y Ws = 0. 1 mm. Dej e
que el di metro de l a al i mentaci n-pi n sea p = 0. 125 mm y el
di metro de l a abertura ser d = 0, 25 mm. Hemos si mul ado el
rendi mi ento con l a tri di mensi onal de el ementos f i ni tos de onda
compl eta sol uci onador HFSS de Ansof t. La Fi gura 2a muestra l a
i mpedanci a de entrada si mul ada de l a antena como una f unci n
de l a f recuenci a. Se observ que l a antena exhi bi una resonanci a
en seri e a 57 GHz, y una resonanci a en paral el o a 60 GHz. La
Fi gura 2b muestra l a ISIII si mul ada de l a antena como una
f unci n de l a f recuenci a. Era evi dente que l a antena estaba mal
i gual a l os 57 GHz, pero que Wei l emparej ados a 60 GHz con
una f uente de 50 n. A 52 GHz, l a magni tud de ISl l l era -8 dB, l o
que i ndi ca una coi nci denci a aceptabl e. Fue el egi do para
exami nar el comportami ento de l a antena en l a condi ci n no
resonante. La f i gura 2c muestra l a gananci a de cresta real i zado
Of the antena na como una f unci n de l a f recuenci a. Se podr a
observar que l a gananci a mxi ma de 14 dBi apareci en l a
resonanci a en paral el o de 60 GHz, con un ancho de banda de
gananci a de 3 dB de 5 GHz.
Ag is the guided wavelength at the center fre quency of
La Figura 3a muestra la distribucin actual de la antena
na en la resonancia en paralelo a los 60 GHz. Fue interesante
observar que la corriente en cada lado corto era de hecho en
fase, mientras que la corriente en cada lado largo cambiado la
fase en su centro para formar una corriente de longitud de
onda completa. En consecuencia, era la corriente en el lado
corto que contribuy a la radiacin en campo lejano ms
dominante que en el lado largo. Los patrones de radiacin en
campo lejano en tanto el planos E y H, de la antena NA en la
resonancia en paralelo a 60 GHz se muestran en las Figuras 3b
y 3c, respectivamente. Como era de esperar, el haz de
radiacin principal fue sin duda en la direccin andanada. El
nivel de lbulo lateral era bastante bajo. La radiacin fue
linealmente polarizada. El componente ms fuerte co-
polarizado se debe a la existencia de la misma fase de las
corrientes en todo el corto SI des, mientras que el componente
de polarizacin cruzada ms dbil era debido a la presencia de
antifase pareados actuales sobre todos los lados largos. La
transicin de fase de las corrientes en los lados largos
representaron los valores nulos en los patrones de
polarizacin cruzada. La figura 4a muestra la distribucin
actual de la antena en la resonancia en serie a 57 GHz. Tenga
en cuenta que la fase de la corriente en corto no fue de la
misma logitud en cada lado.
IEEE Antennas and Prpagation Magazine. Vol . 53, No. 6, December 201 1 43
a
'
80
. 60
L
_ 40
L
20
T
0
c
. - - 20
.
L
L
50 52 54 56 58 60 62 64 66 68 70
|equecy GHz)
`' U
-4
- 8
T
; - 1 2
U
- 1 6
I
50 52 54 56 58 60 62 64 66 68 70
|equecy GHz)
' 1 6
1 2
H 8
T
L
4
U
50 52 54 56 58 60 62 64 66 68 70
eq uecy GHz)
A
-40
OU _ J0
4
. 0#
_ T Z0
ZT 0
CO
C| OSS
T oJ
D0
Figure 5b. The E-plane patterns at non-resonance, 52 GHz.
Z10
J
0
0
0
/
Z T 0
-40
-O0
CO
C| OSS
T o0
D0
O0
Figure 5c. The H-plane patterns at non-resonance, 52 GHz.
as the characteri stic impedances to be 1 00 for the long sides
and 1 00 for the short sides of the microstrip grid-array
antennas throughout the analysi s.
3. 1 Resonant Frequency
The resonant frequency is the frequency at wh ich the
parallel resonance occurs for the microstrip grid-array antenna.
Fi gure 6 shows the simulated resonant frequency for the
three di ferent thicknesses as a fnction of relative permit
tivity, with the number of radiating elements as a parameter.
As the substrate thickness was taken into account in calculat
ing the efective relative permittivity to design the microstrip
grid-array antenna, it could be noted that the resonant fre
quency changed slightly with the substrate thickness or with
the number of radiating elements. For instance, the resonant
frequency changed within 5% for most cases with a fxed
relative permittivity as the substrate thickness vari ed from
0. 254 mm, 0. 3 8 1 mm, and 0. 508 mm, or the number of radi
ating elements, n, varied among nine, 1 6, and 25. It was further
noted that the resonant frequency generally decreased with an
increase in relative permittivity.
3. 2 I mpedance Bandwi dth
The impedance bandwidth of a microstrip grid-array
anten na is typically from 6% to 1 2% for -1 0 dB [2] .
Fi gure 7 shows the simulated impedance bandwidth for the
three di ferent thicknesses as a function of the relative permit
tivity, with the number of radiating elements as a parameter. As
with all microstrip structures, the substrate thickness and
relative permittivity have a strong infuence on the i mpedance
bandwidth. Generally, a thicker substrate with a lower relative
permittivity ofers a microstrip grid-array antenna with a wider
impedance bandwi dth. Taking the mi crostrip grid-array antenna
with nine radiating elements on the substrate of c_ 2. 2 and
h 0. 1 0 1 6- as an example, it achieved a 36% impedance
bandwidth. Si mi larly to other resonant array antennas, the
impedance bandwidth of the microstrip grid-array antenna
depends on the number of radiating elements. Simply stated, for
a given substrate size and controlled by the gain-bandwidth
relationship, the more radiating elements there are, the narrower
is the impedance bandwidth.
3. 3 Half-Power Beamwi dth
The half-power beamwidth of a microstrip grid-array
antenna can be wider or narrower, depending mainly on the
number of radiating elements. Figure 8 shows the simulated
hal f-power beamwi dth ac ross the main radiation lobe in the
E plane for the three diferent thicknesses as a function of the
relative permittivity, with the number of radiating elements as
a parameter. The half-power beamwidth in the H plane was
very simi lar. As expected, the half-power beamwi dth decreased
46
IEEE Antennas and Propagation Magazine, Vol . 53, No. 6, December 20 1 1
+
4
L
C
0 c
C
0
w
+
C
0
C
L
U
0
\
>
_ 4
L
C
0
z
C
c
M
H
C
K
C
C
U
0
-.- n=9
-.- n= 1 6
n=25
f-
.
s
.
-.
2 4 ! c
Rel at i ve per mi tti vi ty
. ~.
z 4
-.- n=9
-.- n= 1 6
~A n=25
-g
c
Rel ati ve permi tt i vi ty
-. - n=9
-.- n = 1 6
-.- n=25
a
,~.
z 4 c
Rel at i ve permi tt i vi ty
Figure 6. The resonant frequency as a function of the rela
tive permittivity: (a) h = 0. 254 mm, (b) h = 0. 3 8 1 mm, and
(c) h = 0. 508 mm.
J
+
4
C
1
0
J
0
L
2
C
0
0
!
L
E
>
>
J 4
H
z
c
0
L
4
C
./.
/
2 4
-.- n=9
-.- n=1 6
~A~ n=25
! 0
Rel at i ve permi tti vi ty
.
\
K
z
a
\ ~
C
z 4 c
Rel at i ve per mi tt i vi ty
4c
J
c
z
C
zc
K
0
c
L
C
K
0
c
C
C
z 4 8 c
Rel at i ve permi tt i vi ty
Figure 7. The impedance bandwidth as a function of the
relative permittivity: (a) h = 0. 254 mm, (b) h = 0. 3 8 1 mm,
and (c) h ~ 0. 508 mm.
IEEE Antennas and Propagation Magazine, Vol . 53, No. 6, December 20 1 1 47
>
0
c y
C
0
| c
J
c
.
4c
0
1c
L
zc
L
w
0
>
0
z 4 c
Rel at i ve permi tt i vi ty
zc
C
0
_ cc
J
c
C
c
0
0
J
4c
L
0
zc
C
w
0
~
0
0
L
C
c
0
c
~
c
c
C c
4c
J
_ 1c
z
4 c
Rel at i ve permi tt i vi ty
+
zc
C
w
0
z 4 c
Rel ati ve permi tt i vi ty
Figure 8. The half-power bearwidth as a function of the
relative perrittivity: (a) h = 0. 254 rr, (b) h = 0. 3 8 1 rr,
and (c) h = 0. 508 rr.
with the number of radiating elements. The half-power
beamwidth is sensitive to the substrate's relative perittivity,
but is not sensitive to the substrate's thickess. The higher i s
the substrate's relative permittivit, the wider i s the half-power
beamwidth, due to the excitation of a stronger surface wave.
3. 4 Gai n
A microstrip grid-array antenna is a high-gain anten na
[2, 4, 23] . Fi gure 9 shows the simulated gain in the broadside
direction for the three di ferent thicknesses as a function of
relative permittivity, with the number of radiating elements
as a parameter. Note that the gain decreased with relative per
mi ttivity or thickness, but increased with the number of radi
ating elements. The gain increment with the number of radi
ating elements will be l i mited by the attenuation of the micro
strip l i nes that form the array. The gain decrement due to a
higher permittivity or a thicker substrate can mainly be attrib
uted to the excitation of a stronger surface wave. The larger
attenuation of the microstrip l ines due to a higher permittivity
and more feeding loss for a thicker substrate also reduce the
gain. Furthermore, control over the phase synchronization
for more radiating elements on a thicker substrate of a higher
permiuivity becomes more di fcult for a higher gain .
3. 5 Gai n Bandwi dth
In addition to the impedance bandwidth, a number of
bandwidths can be defned under the radiation-patter charac
teristics (i . e. , patter shape, si delobe level, gain, cross polari
zation, etc. ). It was found that the most stringent bandwi dth
criterion i s seen to be the gain bandwidth [2] . Figure 10 shows
the simulated gain bandwidth for the three diferent thick
nesses as a function of relative permittivity, with the number
of radiating elements as a parameter. Note that the gain band
width of the microstrip grid-array anten na decreased with the
number of the radiating elements, which was simi lar to other
resonant array antennas. The gain bandwidth i s sensitive to the
substrate's thickness. The thicker the substrate is, the wider is
the gain bandwi dth.
4. Synthesi s
The synthesis of microstrip grid-array antennas has been
attempted [ I , 2, 4] ; however, no direct synthesis method or
design procedure has been developed. In this section, we
describe the synthesis and outl ine the design steps required to
implement a microstrip grid-array antenna.
In synthesizing the microstrip grid-array anten na to satisf
specifc performance requirements, the choice of the substrate
must frst be made, to know the relative permittivity 8 , the
loss tangent, o , and thickness, h. The mesh lengths, l and s,
necessary for the microstrip grid-array antenna to operate at the
required resonant frequency, ) ,can then be calculated as
48
IEEE Antennas and Prpagation Magazine, Vol . 53, No. 6, December 20 1 1
20
1 8
1 6
D
1 4
-
C
K
1 2
\
1 0
8
1 8
1
c 1 4
D
1 2
-
C
1 0
K
~ 8
1 6
1 4
1 2
D
1 0
K 8
\
6
4
2
.
a .
.
0 `.
" a
a ~"
4 6 8
Rel at i ve permi tt i vi ty
"
::
4 8
Rel at i ve permi tti vi ty
*.
4 6 8
Rel at i ve permi tt i vi ty
1 0
1 0
1 0
Figure 9. The realized peak gain as a function of the relative
permittivity: (a) h = 0. 254 mm, (b) h = 0. 3 8 1 mm, and (c)
h = 0. 508 mm.
20
>
!
-
!
J
+
! 4
! 2
C
! 0 0
J
C
-
--
-
'
0
\
0
_
A
2 4 ! 0
Rel at i ve permi tt i vi ty
bb
-.- n=
0
-.- n=1 6
>
4 n=25
s 4
_40
1
10
2
20
C
! _
_
__j
C 0
0
0
L
J 0
=
40
C
0
1c
J
C
20
0
' ! 0
2 4
Rel ati ve permi tti vi ty
'
-.
0
a
0
.,~
.-
2 4
Rel at i ve permi tt i vity
! 0
A
! 0
Figure 1 0. The gain bandwidth as a function of the relative
permittivity: (a) h = 0. 254 mm, (b) h = 0. 3 8 1 mm, and (c)
h = 0. 508 mm.
IEEE Antennas and Prpagation Magazine, Vol . 53, No. 6, December 201 1 49
.
and
:
for phase synchronization, where L is the velocit of light in
free space and c
,,
is the substrate's efective perittivity.
The choices of the mesh widths, and , are more
involved. These are govemed by the impedance, transmission,
and radiation properties. As previously stated, the long sides act
mainly as transmission lines. The currents on them generate the
undesired cross-polarized radiation. Hence, the width,
should be narrower to reduce this. A narrower width,
implies a higher characteri stic impedance, as the characteristic
impedance i s approximately inversely proportional to the
width, A narower width, , also causes higher transmis
sion loss. Because the transmission loss increases rapidly when
the characteristic impedance i s above ::a :+j , the width,
, can be chosen to sati sf
z
,
,
) ::a ,
where z
,
represents the characteristic impedance of the long
sides.
The short sides act as both radi ating elements and trans
mission lines. The currents on them produce the desired co
polarized radi ation. The curents can be uniforly di stributed,
or tapered by varying the width, To fnd the proper width,
'
the radiation resi stance of a short side was evaluated. Fig
ure . . shows the simulated radiation resi stance at the parallel
resonance, -a GHz, for the three diferent thicknesses and the
same loss tangent, tan o a aa: , as a function of the width,
with the relative permittivity as a parameter. General ly, the
radiation resistance noticeably decreased with the width for
< a mm, but varied slowly as a fnction of the width for
` a mm. The radiation resistance was higher for a lower
relative permittivity, and was lower for a thicker substrate. The
radiation resistance varied from . aa to s:a . The radiation
resi stance can be considered to be the loads to the transmission
l ines of both the long and short sides. The appl ication of
matching condition at the input terminal to the source yields the
required width,
Based on the formula for the radiation resistance of a
re sonant half-wavelength microstrip line fed at one end :j and
simulated data, we obtained a formula to calculate the radiation
resi stance of a short side by cure ftting. It i s expressed as
(4)
where z
1
. a-:: - a aa-++c, -
a a. +-,
for a a-: /} a as , and
=
-
a | a:s - a --+:/
- [ a :-:-- - a -s |
- - a:-a:
,
_
-
- | :s+
,
_
- )
1
: : . s - a : . :c, - a a:s-, s
for a as: /} a . :
It must be stressed that Equation was derived from
asymptotic expansions that not only makes it simple to calcu
late the radiation power integral, but also lends insight into the
dependence of the radiation resistance upon the line width and
substrate permittivity ::j Nevertheless, some loss in accuracy
was encountered, and this was overcome by introducing the
empirical factor.
Next, the substrate's length, a, and width, b, can be deter
mined from the number of meshes required by the gain. The
gain in dBi for the microstrip grid array can be estimated as
where
a IEEE Antennas and Propagation Magaine, Vol . No. - December :a . .
_ 700
J
L
-
0
600
L
L
K
+
500 U
U
0
L
400
C
+
K
T
K
J
_ 800
-
0
L
C
600
K
+
U
U
0
400
C
C
+
K
200
T
K
-
C
o 800
-
0
L
600
C
K
+
U
400 U
0
C
200 C
+
K
T
K
-
_ -
\
__-__-_"
,
_=_2_2_- _e_-_"
,
_=_3. _7
-.- " =4. 5 -. - , =6. 0
, ,
-
__
_- --
-
-
P_ 4
_
#
___ -#~P
0 . 1 0. 2 0. 3 0. 4 0. 5 0. 6
Wi dth W ( mm)
s
-
-
"
-
-
-
-
--e
~
q
--
#
-
#
-
--
#
-
0 . 1 0. 2 0. 3 0. 4 0 . 5 0. 6
Wi dth W ( mm)
s
Figure 1 1 . The radiation resistance as a function of the
width of the short side: (a) h = 0. 254 mm, (b) h = 0. 3 8 1 mm,
and (c) h = 0. 508 mm.
g
1
_ n,= 2 1 6 - 0. 52n +0. ln
2
g
2
_n,= -1 43. 2 - 1 . l 3n - 0. 058n
2
g
3
_ n,= 30. 3 + 0. 74n
for 0. 0375 :hj : 0.0625 ,
g
1
_ n,= -505 + n. 62n - 2. 3 1 n
2
g
2
_ n,= 1 33. 57 - 26. 52n + 0. 83n
2
g
3
_ n,= 1 7. 43 + l . 77n - 0. 038n
2
for 0. 0625 :hj :0. 0875 , and
g
1
_ n,= -362 + 22n - 0. 59n
2
g
2
_ n,= 1 4 1 - I On + 0. 24n
2
g
3
_ n,= 9 + 1 . 46n - 0. 024n
2
for 0. 0875 :hj :0. 1 2 .
( 1 0)
( 1 1 )
( 1 2)
The gain of a microstrip grid-array antenna is increased by
3 dBi when the number of radiating elements is doubled.
However, thi s does not imply that the gain can be increased
arbitrarily with an increased number of radiating elements, in
practice. According to our experiments, the upper limit for a
probe-fed mi l l imeter-wave microstrip grid-array anten na with
only one layer of radiating elements on a substrate of size
3 ^ 3, with a relative permittivity ranging from 2. 2 to 1 0
and a thickness ranging from 0. 1 mm to 0. 6 mm, i s not higher
than 25 dBi .
Finally, the feeding point must be located, typically at the
joint of the long and short sides near the middle of the antenna.
The diameter, p, of the feeding pin and the diameter, d, of the
aperture on the ground plane should be consistent with the
feeding cable or connector.
In the fol l owing, the actual design procedure is dem on
strated for an example of a microstrip grid-array antenna
designed to operate at 60 GHz, with a maximum gain of : 1 3 . 5
dBi , and an i mpedance bandwidth on GHz [26-32] . It i s shown
that the formulae apply weil at 60 GHz. In addition, we have
also tested the formulae when designing microstrip grid-array
antennas at 24 GHz, and they have proven to be efective.
The Ferro LTCC A6-S ceramic type was chosen to be the
substrate, wh ich had a relative permittivity of 5. 9 and a loss
tangent of O. 002. The substrate was 0. 385 mm ( 0. 077 ) thick
to avoid the excitation of the TE
1
mode surface wave. For the
sake of low cost and easy fabrication, the width and thickness
of the meshes were kept uniform at 0. 1 5 mm and 0. 01 mm,
respectively. Though fne tuning of the wi dths of the short and
long sides, one can design a microstrip grid-array antenna for
better performance. This is usually undertaken with an
opti mization tool, and is quite time consuming. The meshes
were made of gold. At 60 GHz, the substrate' s efective
IEEE Antennas and Propagation Magazine. Vol . 53, No. 6, December 201 1 5 1
penmttlVlty was s__ = 4. 3 , and the guided wavelength was
A
g
= 2.42 mm. The mesh lengths were l= 2. 5 mm A
g
and
s = 1 . 365 mm A
g
]2 . The characteristic i mpedances for the
long and short sides of the mesh were equal : Z
o
/ = Z
O
s = 1 02
Q; the widths were W = Ws = 0. 1 5 mm. The radiation resi stance
of a short side was = 250 Q.
Gi ven the specifed gain value of 1 3 . 5 dBi , the required
number of meshes was found to be at least 1 4, which led to an
estimation of the length and width of the substrate as a = 1 1 . 5
mm and b = 5 mm, respectively. Considering the requirement
for singulation in LTCC, we enlarged the length to a = 1 3. 5 mm
and the width to b = 8 mm. The di ameter of the feed pin was
p = 0. 1 5 mm, and the diameter of the aperure on the ground
plane was d = 0. 3 mm. Figure 1 2 shows a photo ofthe fabricated
microstrip grid-aray antenna.
Figure 1 3 shows the simulated results with the measured
values for the microstrip grid-array antenna. It was evident
from the fgure that the measured 1 0 dB impedance bandwidth
was 8. 7 GHz, from 56. 3 GHz to 65 GHz, wh ich covered the
whole band of 57-64 GHz. Figure 1 4 compares the simulated
with the measured radiation patters of the microstrip grid-
Figure 12. A photo of the 60-GHz microstrip grid-array
antenna in LTCC.
c
D
- c
! D
-zc
0 D
-1c
-1
c
Measured
Si mul ated
z 4
~|aq0acy [ GHz)
Figure 13. The simulated and measured I SI I I as a function
of frequency.
1
3
1cc
- 1c
zc
- 10
zc
N6B5u|6D
c| 0u| Bl6D
z c c
c
Figure 14a. The co-polar E simulated and measured radia
tion patterns.
11
Z
1cc -
/
zc
z+c
/
- 1c
-
- 1c ;
N6B5u|6D
c| 0u| BI6D
z cc
c
c
c
zc
Figure 14b. The cross-polar E simulated and measured
radiation patterns.
1cc
- 1c
zc -
- 1c
z+c
N6B5u |6D
zc
c| 0u| Bl6D
z c c
c
Figure 1 4c. The co-polar H simulated and measured radia
tion patterns.
52 IEEE Antennas and Propagation Magazine, Vol . 53, No. 6, December 201 1
Z1
- T O
-
-
-N6B5u|6D
c| 0ul Bl6D
T O
T O