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Diseño Combinacional de Bajo Consumo
Diseño Combinacional de Bajo Consumo
. Fugas:
Corrientes de fuga de diodos y transistores
Vdd
Vin Vout
CL
= CL * Vdd2 * f01
= CL * Vdd2 * P01* f
= CEFF * Vdd2 * f
Assume:
P(A=1) = 1/2
P(B=1) = 1/2
Then:
P(Out=1) = 1/4
P(0 1)
= P(Out=0).P(Out=1)
= 3/4 1/4 = 3/16
CEFF = 3/16 * CL
= (1 – P1) P1 = (1 – P0) P0
VDD
Mp
Out
In1
In2 PDN
In3
Me
Assume:
P(A=1) = 1/2
P(B=1) = 1/2
Then:
P(Out=0) = 3/4
CEFF = 3/4 * CL
P(out = 0)
P01 = P0
X: 0 → 1 Tras un retardo
ABC 101 000
X
. X = 0, C = 0 → Z = 1 espurio
Z . X = 1, C = 0 → Z = 0
Unit Delay
6.0
out8
4.0 out6
out4
V (Volt)
out2
2.0
out1
out3
out5
out7
0.0
0 1 2 3
t (nsec)
S0 S1 S2 S14 S15
Sum Output Voltage, Volts
4.0 4
S15
6
2.0 3
S10
Cin
5
S1
2
0.0
0 5 10
Time, ns
0
F1 0
1 F1 1
F2 0
0 2
F3
0 F3
0
0 F2 1
0
Vdd
Vin Vout
I picot r I picot f tr t f
E dp ( )VDD VDD I pico
CL 2 2 2
0.15
0.10
IVDD (mA)
0.05
VDD VDD
Vout Vout
Vin Vin
CL Vout CL
P lineal (a)
P saturación (b)
(a)Large capacitive load Vin (b) Small capacitive load
El peor caso
Psc mínima: tr/f salida >> tr/f entrada : Solución local
Vdd
Istat
Vout
CL
Vin=5V
Vout
Drain Junction
Leakage
Sub-Threshold
Current
ID
Si VT ↓ → ID (VGS =0) ↑
1 T VDD T
T 0 T 0
Pav P (t ) dt i DD (t )dt
k/C = VDD/T
V DD
VDD
1 1 B 4
A A 2
B
F C 4
2 CL
B D 2
F
2 A 2
D 1
A
B 2C 2
1.5
NORMALIZED POWER-DELAY PRODUCT
1.00 P x td = E t = CL * Vdd 2
0.70
0.50
0.30
0.20
E(Vdd=2) (CL) * (2)2
0.15 quadratic dependence =
E(Vdd=5) (CL) * (5)2
0.1
51 stage ring oscillator
0.07
E(Vdd=2) 0.16 E(Vdd =5)
0.05
8-bit adder
0.03
1 2 5
Vdd (volts)
5.50
5.00
4.50 I ~ (Vdd - Vt)2
4.00
3.50
ring oscillator
3.00
2.50
Td(Vdd=2) (2) * (5 - 0.7)2
microcoded DSP chip =
2.00 Td(Vdd=5) (5) * (2 - 0.7)2 VT = 0.7 V
1.50 adder
1.00 adder (SPICE) 4
2.00 4.00 6.00
V dd (volts)
v2 1
t p CL dv
Relatively independent of logic function and style. 0 i (v )
56 – 44000 transistores
VDD↓ → PDP↓ pero tp↑
Large W/L’s
Higher Capacitance (*) Lower Voltage
CL 1 1
(*) Para mantener la velocidad constante: t p ( )
2VDD K n K p
Larger sized devices are useful only when interconnect dominated.
Minimum sized devices are usually optimal for low-power.
CL 1 1 C (1 ) 1 1
t p ,r ( ) int ( ) N
2VDD,r K n,r K p ,r 2VDD,r K n,r K p ,r
N
CL 1 1 C (N ) 1 1 CL
tp ( ) int ( )
2VDD K n K p 2VDD NKn,r NK p ,r
tp,r = tp CL = Cext + N Cint
→ 1 N N = Cint (N + α)
VDD VDD,r
VDD,r NVDD N (1 )
Ejemplo: N =3, α=2:
3 2 5
VDD VDD,r VDD,r
3(1 2) 9
(Si W ↑, VDD ↓)
(N ) 3
E Er
(1 ) 3 N 2
dE dE E r d [( N ) 3 / N 2
Minimización de E: 0 0
dN dN (1 ) 3
dN
HIGH PERFORMANCE 7
=0
NORMALIZED ENERGY
5
W/L >> CP / (K C MIN) =α 4 CL = 0
3 = 0.5
LOW POWER 2
1.5 =1
W/L 2 CP / (K CMIN) = 2α
(if CP K CMIN) adder
1.0 = 1.5
P(A=1) = 0.5
A x P(B=1) = 0.2
1 P(C=1) = 0.1
B
Z
C
B x
2
C
Z
A
P0→1 (x) = (1-PBPC)PBPC = (1-0.2*0.1)(0.2*0.1) = 0.0196