Simultaneous measurement of electro-optical and converse-piezoelectric coefficients of PMN-PT ceramics Pingping Xiao"? Xianping Wang," Jingjing Sun,' Meizhen Huang,’ Xianfeng Chen,’ ‘and Zhuanggi Cao'™ ‘Departmen: of Physics the State Ker Laboraury on Fer Optic Loa! Area Communication Newworks and “Advanced Optical Communica Systems, JioTong Univer, Shangha, 200240, China college of Phys Science and Eapicering technology, Yicbun Univers, Mohan 336000, China ‘yon saeaiecn pnangpivecr malcom Abstract: A new scheme is proposed to measure the electro-optical (EO) and converse-pigzoelectric (CPE) coefficients of the PMN-PT ceramics simultaneously, in which the PMN-PT ceramics acts as the guiding layer of, a symmetrical metal-cladding waveguide. As the applied electri field exerts ‘on the waveguide, the effective refractive index (RI) (or synchronous angle) can be effectively tuned from a selected mode to another adjacent mode ‘owing to the high sensitivity and the small spacing of the ulua-high order modes. Subsequently, a correlation between EO and CPE coefficients is established, With this correlation and the measurement of the effective RI change 10 the applied voltage, the quadratic EO and CPE coefficients of PMN-PT ceramics are obisined simultaneously. The obtained results are further checked by fitting the variations of effective RI to a quadratic function, Our measurement method can be extended to 2 wide range of otber materials. ©2012 Optical Socoty of America ‘OCHS codes (20.450) Optical constants (130-275) Glas waveguides (160.2100) Hlecto- optical material. References and links GH. Haceting, "PLZT elereopt -tatrilsund applications review,” Feroelcics 781), 25-85 (1987) 2. T Tumors, K Motsoura H Athids, Kondo, and. 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Shen, "An ens measurement fefaciomeer based on a symmetic rnatleled waveguide veto” J Ph. D App: Phys. 418), 185105 2008, no, Pgh 20 Coes. Seen XX Deng, BM. Duan, W. Yu, MH. Sang andS.Q. Wang, “Picometer iplncencas sensing unng the ulaighvoder modes na submimeter scale optical waveguide” Opt Express $305), 10061-1005 (209) 21, W.P, Chen and 1M. Chen, ne of surlace plasms waves for determination of th thickness nd optical Constants thin meal ms"). Opt Soe. Am. 712), 189-191 (1981). 2, STEELY. La ind Q, Wang “Eleewe-opi ceramic material nd device” US. patent 6 890, 874B1 (205) Ni Gonto-Powtand, 1M Devignes, Belleman, and F.Bridou, “Simolsteous careteraatin ofthe clecio- See cree cnn te ma BoP 7 ‘App Pave 103 014107 201%) 24, Jr Kaiba and K Suri, “Theoret understanding of wn dbsorton-baed surface plsmon resonance sensor ised on Ketan ory.” Cher, 749), 656-701 2002), 1. Introduction “The development of new opticel materials with large EO and CPE coefficients is currently of great interest because ofthe possiblity to further minimize device size and reduce operation Voltage {1-8] Although the lanthenum-modified lead zirconate titanate (PLZT) (1) transparent ceramics exhibits much highér EO and CPE effect than that of LiNbOs crystal, its significant electric hysteresis [2] is unsuitable to build the precision apparatuses. Fortunately, the newly presented (1-2)Pb(MgiaNbasNbyn)Os-APBTiO; (PMN-PT) ceramics [3], which is transparent from 500 to 7000 nm of the light wavelength, effectively resolves the issues of hysteresis and possesses a morphotropic phase boundary (MPB) [2,5] between the tetragonal and rhombohedral phases. Its anomalously high EO and CPE properties eround the MPB are ‘understood as a result of enhanced polarizability arising from the coupling between the two above-mentioned phases [6,7]. Moreover, no consideration of the crystalline orientation is required [8], as PMN-PT is polycrystalline and polarization independent. Consequently, the PMN-PT transparent ceramics offers promise of widespread applications in the optical ‘communication system, such 2s optical limiter [9], polarization controller [10] and optical switeh [11,12], ete Despite the continuous fundamental investigations and extensive utilizations, the values of BO and CPE cozificients of PMN-PT have not been completely known. These complete properties could luy the groundwork for the reliable simulation packages which makes the Gevice design process more efficient. EO coefficients can be determined by one-beam- ellipsometric technique [13,14] for measuring the induced phase retardation between two brthogonel plane-polarized lights and by two-beam-interferometrc arrangements (15), such as Mach-Zehnder and Michelson interferometers, for measuring the interference between two parallel plane-polaized lights. On the other hand, the CPE coefficients are always determined From the resonance frequencies by the IEEE standard technique (16). Diverse as measurement techniques are, they can be characterized by one common shortage, namely involving only tone effect, However, when an electri field is applied to PMIN-PT ceramis, the changes in the Cptical path length consists of both the change in refractive index (RI) due to EO effect and the change in sample thickness resulting from the CPE effect. Therefore, its highly expected that a simple method is capable of measuring the EO and CPE coefficients of PMN-PT ceramics simultaneously. {1166500-15.00 USD Received 11 Ape2012; revised 9 May 2012; accepted 4 Moy 2012; published 6 Jun 2012 (©)2012 050, 18 ue 2012/ Vt. 20, No, 13/OPTICS EXPRESS 13834Recently, i is well established that the ultrahigh-order modes excited in the symmetrical metal-cladding waveguide (SMCW) [17-20] are highly sensitive to the changes of RI and thickness within the guiding layer. That is because the light field confined in the guiding layer is not in the form of evanescent wave but oscillating wave, The SMCW-hased oscillating wave sensor has been achieved experimentally. yielding a detection limitation of 8.8%10in RI units (18) and 3.3 pm in thickness [19]. In this paper, we take advantage of the high sensitivity of the ultra-high order modes in response to the change of the guiding layer parameters and the small separation between two adjacent ultra-high order modes to establish 2 correlation between EO nd CPE coefficients of PMN-PT ceramics. With this correlation ‘and the measurement of the effective RI change to the applied voltage, the quadratic EO and CPE coefficients of PMIN-PT ceramics are obtained simultaneously. 2, Structure and principle Fig. 1, Stmcture of SMCW. The PMN-PT ceramics i randwiched by two sliver fm sich ‘ts the clading ane the elacodes to supply elect Hel ‘The schematic layout of the SMCW for simultaneously measuring BO and CPE coefficients ‘of PMN-PT ceramics (provided by Boston Applied Technology Inc.) is illustrated in Fig, 1. A thin sliver film and a relative thick sliver film are deposited on the top and bottom side of the PMN-PT ceramics by the thermal evaporation technology, and functioned as the coupling layer and substrate, respectively. Moreover, these two sliver films are also employed as ‘electrodes to supply electrical field and thus the optical properties of the guiding layer can be clectrically controlled. From top to bottom, the refractive index (dielectric coefficient) and thickness of the SMCW structure are denoted by m, (¢,), A, (j=1.2,3), respectively. Because of symmetrical metal cladding, the effective index of guided modes can be in the range of (0, 1], it uniquely capable to couple light directly from free space into SMCW {17} Furthermore, owing to the millimeter scale thickness of the guiding layer, the waveguide can accommodate tens of thousand modes. Dispersion equation of the mt ultra-high order mode (m> 1000) can then be simply approximated as [18] , m=0,12, a) Thy where xf =Jkje— BE is the vertical propagation constant, =27/A is the wavenumber with light wavelength A in free space, and 6, = yN), isthe transverse propagation constant with the effective index N, of the guided modes. The resonance excitation of the guided mode occurs at B= Krein Oy, @ ‘166800-1500 USD Received 11 Apr2012; revised 9 May 2012; soceped 14 May 2012; published 6 Jn 2012, (©)201208A, 18 June 2012 Vel. 20, No, 13 OPTICS EXPRESS 13835Ri of the air, @, isthe incident angle, and: is the mode order “Two typical ukzahish-order modes (their mode orders are denoted by m-+1 and m) with smal) Nate shown in Fig, 2. The used calculating parameters are as follows: ry =1.0, 1m, =2.620, 6; 18.6+05i, hy=39nm, fy =3.0mm, hy =300m and 2 = 632.8% ‘The RI of PMN-PT ceramics was obtained from the material supplier (provided by Boston Thnolied Technology Inc). The thickness and the complex dielectric permitivty of the top ARUPiim are determined by the double-wavelength method (21]. When an electric field Is poled, the RU and thickness of PMN-PT ceramics is altered by the BO and CPE effect, and than the synchronous angles (@,,,,6,) of the two ultrahigh-order modes are shifted to a new position (4, .@) where m,, represents the ‘nde otic [Del Fig 2 (Color onne) Theta varton of synchronous angles in espns othe applied sehage. “According to differential principle and Eq, (1), one can obtain the variation ofthe effective: Rlas Pena 3 SL Alt, @ where An, and Aly are the electric fiek-induced changes inthe RL and thickness of PMN- PT ceramics, respectively. It is seen that the effective RI of the ultrahigh-order modes, which are excited at very small incident angles, ic. +0, shows a high sensitivity to An, and Ah, “The birefringence Ari of an electro-optic material in the presence of an electri field can be described by the equation e vo ¥ y oncom Sb(E)(Z) | © oe eee no are imcer ied aa i Deer pore ere eae lV te oar ee = er nn ance A ene ee lnacte pt Tic mB cre Le a rasta Received 11 Ape 2012 revised 9 May 2012; accepted 14 May 2012; published 6Jun 2012 -166500-.81500 USD 1 June 2012/Vol20, No. 13 OPTICS EXPRESS 15836 (2012084. » where S,, is @ component of the quadratic EO coefficient. For the case of the linear electro- optical ceramics, the similar analysis process can be easily obtained. ‘The thickness change of the PMN-PT ceramics is expressed us sh mash(Z), oO where dy, is a component of CPE coefficient. By combining Eq. (5) and Eq. (6), the variation of effective RI in Bg. (3) can be rewritten as o where ® Ing. (7), n, and A, are the known quantities, V isthe applied electric voltage, effective RI N=n, sin@ and AN can be detected in the experiment. S,, and d., are quantities to be determined. It is clear that Eq. (7) can be solved only if there isa correlation between S., and dy Because of the high sensitivity with \y +0 of the ultra-high order modes and small separation between two adjacent modes, it is possible that exerting a certain critical voltage V" to shift the synchronous angle of the (m+1) th mode from@,,. to @, which is just that of ‘mth mode in the case of zero applied electric field. The new dispersion equation of the (+1) th mode under the critical voltage is then expressed by AE" (he+ hy) = (m+) x, ® where x2"! = l(a, +An,)'—f2,, .On subtracting Eq. (1) from Eg, (9), we obtain (ef eh Hh, = 2, 0) Since Py = ly éve to 8,,,=0,, and the numerical simulation verifies that An, and fare less than 10 order of magnitude as 6, shifted to @,. In this case, after neglecting the higher-order small quantities one yields maar an By combining Egs. (5)-(6) and Egs. (10)-(11), a new correlation between quadratic EO and CPE coefficients can be cast in the form #166500-$1500 USD Received 11 Apr 2012; revised 9 May 2012; aceped 14 May 2012; published 6 Jun 2012 (C)2012084, 1 June 2012 Vol. 20, No 15 OPTICS EXPRESS 13857 _HE nit) sammy (Yo Hon (Z) suena (E)a 1 vy ve where gn =—2nts,(Y%] and ah, = dy () ate te comesponding changes in the RL motets) and ah wh ponding chang and thickness ofthe PMN-PT ceramics with eppied critical voltage V* Substituting Bg, (12) into Bg (7) and using Eq, (8), the quadratic BO and CPE coeficients can be determined with the detection values of Av and B In onder to assure the reliability of the scheme, the obisined resuls are fither checked by fiting the experiment data to the dqadratic function Eq) 3. Experiment and discussion “The optical arrangement for smsitaneoesly mensuring the EO and CPE coefficients of PMN- PT-ceramics based on the SMCW structare is shown in Fig. 3. A polarize and two apertures with diameters of I_mm ae subsequenly placed about 0.5 m apart An incident light from a He-Ne laser passes through them to be TE polarized and father collimatee. We used a PMIN~ PT ceramics with dimensions of 5:62mmx4 20mm x3.00nun length with thickness) whichis deposited with two sliver films and firmly mounted on a 6/28 goniometer, and the intensity of the reflected light is detected by a photodiode (PD). A home-made sofiware allows personal computer to conrol the goniomeler and record series of resonance dips corresponding o the excited guide modes Comper ano N Fig 3. Experiment arangement for Simultananusly measuring the EO and CPE coefficients of PMN-PT exnmice. PD: pocodiale ‘Aree finiens Des] Fig. 4. (Color online) Messued resonance dips asa function of te angle of incdeace for ‘aes applied volages, #165500-$1500USD _Reosivod 11 Apr 2012; revised 9 Mey 2012; accepted 14 May 2012; published 6 Jun 2012 (2012088, 18 June 2012/ Vol 20, No.1 /OPTICS EXPRESS 13835,Inthe experiment, the angle of incidence is set around one selected ultrhigh-order mode (9= 4537"), because the guide mode excited at small angle ean offer @ higher sensitivity {18}. The measured resonance dip asa function ofthe angle of incidence for various applied voltages is shown Fig. 4. Because of An, >0 and h, <0 at any exerted voltage, variation of the resonance peak induced by BO and CPE effects partially compensates one another. Under low voltages, the resonance dip shifts to the left side because the contribution of the CPE effect is greater than that of BO effect (e. AN <0). As the applied voliages are larger than “400V the resonance dip shifts othe right side since the contribution of the EO effect in this case is predominated (ie. AN > O)becatse the EO effec is a quadratic Function of voltage The critical voltage V" for the resonance dip of the (m+lth mode tends to that of the adjacent (mth) mode (under zero-field) is about SOOV . By using Eqs. (7)8) and Ea. (12), and using Eq, (8). we obi the quadratic EO coefficient Sy,=—2.24x10° m?/V* and the CPE coefficient dy, = -96pm/V of PMIN-PT ceramics. In Fig. 4 itis found thatthe minimem reflectance and the FWHM of the resonance dips gradually increase with the increasing applied voltages, it is perhaps in virue of an eleco-absorptive effet in PMIN-PT ceramics [23]. That is because the radiative dsmping and intrinsic damping of the waveguide structure, ‘which are two factors to determine the minimum reflectance and tbe FWHM of the reson dips [24), are functions ofthe extinction coefficient K of PMNPT ceramics that ean altered by the electro-absomptive effect. ome Fig. 5. The variation of effective RI relied 10 vations applied volages. The quadratic curve twas cbesned by iting the experimen: da 0 Eg (6. The od closed angles aod th be ‘Open tangs coresspond {0 the Ie and righ shift of synchronous angles in Fig. 4 repestvel ‘The variation of effective RI related to various applied voltages is shown in Fig. 5. Its clear that the negative vaules (red closed tiangles) ofthe variation ineffective RI coresspond to the left shift of the resonance peak while positive values (blue open triangles) coresspond to the right shift ofthe resonance peaks in Fig. 4, respectively. By fiting the experiment data to 4 quadratic function, the parameters =7,5927%107 and B=~2,839%10" in Bq. (7) are ‘obtained. By submitting the above perameters into Eq. (6, the same results of the quadratic EO coeiicient and the CPE coefficient of PMN-PT ceramics ate finaly received. 4. Conclusion Jn conclusion, a simple method to measure the EO and CPE coefficients of PMN-PT ceramics ‘simultaneously has been described, This method is based on the high sensitivity to the RI and the thickness of the guiding layer of the ultra-high order modes and the small separation between two adjacent ultra-high order modes. By exerting a critical voltage on the PMN-PT ‘n19sseo 515.00 USD Reteived 11 Apr 2012; revised 9 May 2012; accepted 4 May 2012 published 6 Jun 2012 (©2012 084 1 June 2012/ Vol 20, No, 13/ OPTICS EXPRESS 13859‘ceramics, a resonance dip can reach the position of the adjacent mode, In this way. we established a correlation between EO and CPE coefficients. Measurement has been performed for a PMN-PT ceramics, and the results are in good agreements with the data obtained by other methods. Acknowledgments ‘This work was supported by thc National Natural Science Foundation of China (Grant No, 61168002), and opening foundation of the State Key Lahoratory of Advanced Optical ‘Communication Systems and Networks (Grant No. 2011GZKF031105), #165500 15.00 USD Reseived 11 Apr 2012; revised 9 May 2012; scoepod 14 May 2012; published 6 Jn 2012 (©)2012 084, 18 une 2012/ Vol 20, No 13 OPTICS EXPRESS 13640,KERR EFFECT OBJECTIVE 1. The phase-shift between the normel and the extra-ordinary light beam is to be reccrded for different voltages applied to the PL2T-element respectively for different electric field strengths. The half-wave voltage U (h/2) is to be determined 2. By plotting the square of the applied voltage versus the phase shift between normal and extraordinary beam it is to be shown that the relation between the two quantities is approximstely linear. From the siope of the straight line the Kerr canstant is to be calculated INTRODUCTION Monochromatic, vertically polarized light impinges on s PLZT element (1ead- Aanthanun-zirconium-titanium compound) which is set in its nolder at 45* to the vertical. An electric field is applied to the PLOT element and causes At to become birefractive. The phase-shift between the normal and the extraordinary light beam behind the PLZT element is recorded as a function of the applied voltage and it is shown that the phase-shift is proportional to the square of the electric field strength respectively of the voltage applied. From the constant of the proportionality the Kerr constant is celeulated for the PLOT element. EXPERIMENTAL 2) Bguipment Kerr cell, PL27-element High voltage supply unit, 0-1 kV haser, He-Ne 1.0 nl, 220V AC Polarizing filter, on sten Optical profile bench, 1 = 60cm Base for optical profile-bench, adjustable Slide mount for optical profile-bench, h = 30 mm photoelenent for optical base plate Page 1 of 9Digital multimeter Screened cable, BNC, 1 = 750 nm Adapter, BNC-socket 4 mm plug paiz connecting cord, 750 mn, red connecting cord, 750 mm, blue id) Set-up ané procedure ‘he experiment for the demonstration of the Kerr effect is set up as shown in Pig. 1 ‘the PLZT element is connected dizectly to the BV power supply whose voltage can be altered between 0 and 1000 Volt with a sufficiently high precision by using 2 digital voltmeter branched in parallel to the HV power supply. Do not exceed 1000 V; this will damage the PLZT element. The Light source is He/Ne laser, the power of which is 1 mi Caution: Never look directly into a non attenuated laser beam Fig. 1 Experimental set-up for demonstrating the Kerr-effect important: Before performing any measurement of luminous intensity the He/Ne laser has to be switched on for about 20 minutes to reach its equilibrium in power emission Page 2 of 9Experimental procedures ‘The experiment is set up and aligned, as in Fig. 1. 2. Turn on the laser for about 20 minutes. 3. Adjust the voltage to zero and wait for one minute 4. Teke down the Ip value’ (khen both polarizer and analyzer are at 0°. ‘ multimeter) should be about 65 WA - 75 uA; use pA range in the digital 5. Turn the analyzer to 90% clockwise. 6. Adjust the voltage to 300 v. count for 5 sec and record the output voltage from the voltmeter (b)reduce the voltage to zero and for 1 minute. Increase the voltage in steps of 25V, from 300V until 1000v, and tabulate your measurements ds shown on page 7. Repeat step 6a, b for every change in voltage As can be seen from Fig. 1, the light from the He/Ne laser which is vertically polarized on passing through the polarizer, impinges on the PL&T element which is set in its holder at 45° to the vertical. The incident linearly polarized wave can be regarded as the superimposition of two “in phase” oscillating waves which are polarized, one perpendicularly and the other parallel, to the PLZT element and to the electric field that is applied to the PLZT elenent. The two light waves pass through the PLZT element at different speeds. The light wave which oscillates parallel to the electric field of the PLZT element is delayed relative the light wave which oscillates perpendicularly to the applied electric field of the PLZT element. This produces a phase difference between the two waves and the light which has Passed through the Kerr cell (PL2T elenent) will be elliptically polarized. This results in the analyzer, which is located behind the Kerr cell at 90° to the polarizer, no longer being able to extinguish the polarized light. Page 3 of 9For 2 phase difference between the two waves of 1/2 a linear polarized wave results from the superimposition of the two waves after they have passed through the PLZT element his linearly polarized wave is turned by 90° with respect to the direction apect to the vertical of incidence, e.g. with the applied voltage is therefore called the “half-wave voltage”. In this case the light intensity behind the analyzer which is at an angle of 90° to the polarizer will show = maximum. A silicon photodiode with amplifier is used as the detector for the auminous intensity behind the anelyzer As long ago as 1875 Kerr discovered that a glass plate te which a strong electric field was applied became birefractive. It soon became clear thet this effect was not based on deformation caused by the electric field es the same phenomenon was observed in liquids and even in The PL2T element used in this experiment has the advantage thet the birefraction, represented by the Kerr constant, is more than tho orders of magnitude larger than for nitrobenzene and voltages of a few hundred volts are sufficient in order to study the electro-opticel effects of the ceramic element, This one is transparent for wavelengths fron 0.4 to 5.6 pm. Its chemical compositions here described by the formula Pb 0.9125 La 0.0675 zr 0.65 Ti 0.3503. with regard to the transmission of light the PLaT element behaves like @ transparent polycrystal, For 2 = 633 nm its transition ratio is more than 60%, With respect to an applied electric field, it behaves ike @ ferromagnetic substance which is submitted to a magnetic field Within the PLZT element there are already prepolerized domains which grow or which aze reorientated by the applied electric field. In this way, the element becomes optically anisotropic respectively birefractive. Regarding the above mentioned electro-optical nodulation, it should be pointed out that the element can deal with modulation frequencies of up to 100 kHz. Page 4 of 9A i ivi \ ap fF oo Fig. 2 Cross-section of PLET element Fig. 2 shows a cross-section of the PLZT element. The active the modulator is @ paral of height = 8 mm, length - 1.5 mm and width = 1.4 mn, he width represents the distafice between the electrodes. The electric field strength is given by the ratio of voltage applied over the distance between the electrodes. The path of the light beam within the element is equal to the length of the element. Active element (1) is encapsulated vsing silicon hermetics (2) in isolating ring (3) and glued between two aadian balsam was used. Wire (6) Glass plates (4). an optical glue the element and connected with BNC are fixed on the electrode faces socket on frame (7) Method of is The Light wave, whose field vector oscillates parallel to the electric field, is called the extraordinary beam whereas the wave oscillating 6 to the field is known as the normal bean perpendicu: If the corresponding refractive indices are designated by np and np and ¢ is the distance in the PLUT element covered by the light, then there is a the two waves of in opticel paths eran - 29) Page 5 0f9This corresponds to a phase displacement of ee Gea re) a where & ie the wavelength of the light in vacuum; here % = 633 nm. It can be shown that the phase displacement ie proportional to length ¢ and the square of polarization P, If we anticipate that the polarization is a linear function of the electric field strength = and the proportionality factor is designated by 2nK, then the following relation is obtained A = 2me 8? @ K is the Kerr constant. E can be expressed by the applied voltage U and the inter-electrode distance ¢ 13) o ale The luminous intensity I behind the analyzer is obtained for the given experimental apparatus (polarizer and analyzer crossed and at 45° to the electric field on the PL27 element) from the selationship (1): 2 I= Io sin a le Ip ig the luninoue behind the analyzer when the polarizer and the analyzer are aligned in the same direction and the electric field on the PLZT element is zero. After substituting (2) in (4) and using (3), the followings is obtained: ax cu? r= Ip sin? MEP 6) a Solving the equation for U* gives : iesin JF 7 ij an approximately stz. line is obtained and the Kerr constant can be derived fron its slope, By plotting U? against 2 dimensions ¢ and d for the Kerr cell (PLZT element) because che geomenri are known. ‘The relative luminous intensity 1/Ip behind the analyzer is measured as @ function of the voltage U applied to the PLZT element Tebulate the measured values as follows: Divo! r Aware sin vivele) a 5 300 | 325 350 375 400 225 $50 975 3000 Plot the graph of 3/Ip vs U (volt). Indi the phase shift as well as the voltages for which maxima and minima of luminous intensity sre observed. Determine the voltage at which the luminous intensity reaches a maximum for the first time. At this voltage the normal and extraordinary beam are phase~shifted by 180°. It is therefore the “hali- wave voltage ". It is @ function of the PLZT element composition and of che temperature. 2. Plot the graph of U° (10%volts”) vs A (degree! Determine the slope of the graph by linear regression a streight line. Using equation (6) with ¢= 1.5 mm, d= 1.4 mm and slope in radian, determine the value of K, the Kerr constant of this element. Page 7 of 9APPENDIX a= 2are simi orvore a0 HM TSH «<—— Voltage for menina ond ‘ao 100 Relative luninous intensity 1/1) behind the analyzer az a function of the voltage U applied to the PLeT element and the phase-shife A between normal and extraordinary bean, Example: Ip = 76 uA v 1 SFArer| alt SE T a a 300 0.53 | 0.00608 a8 3.58 Sse 350 0.44 | 0.00582 a 375 3.75 8.75 400 3.798 | 0.0105 5.88 i. 76 11.76 450 22 | 0.0302 70 20 20 500) 3.82 | 0.1106 39,42 36.84 36.84 550 21.67 | 0.2852 32.28 64.56 64.56 600 14.4 | 0.5894 23.56 95.72 39.7 0 67.95 | 0.8941 7.01 342.02 142 700 7449 | 0.5802 a.3r 363.82 163 750 90.43 | 0.5320 46.83 93.66 | 266 (360-0) 300 16.28 | 0.2142 2.57 55.14 | 308 (360-8) 850 25.65 | 0.3376 35.52 71.04 | 431 (360eay 300 S184 | 0.6822 55.68 Ti1.36__| 471_(@6ora) 350 a7.77 | 0.6282 2.45 104.9 | 615 (720-8) 1000 25.92] 0.3412 35.78 72.48 | 688 (720-2) Table: Voltage U across the PLzT-elenent, light intensity I behind tho snelyser and phase shift 4/2 between normal and extraordinary bean Page 8 of 9se = 1.6 10 tee) SETS mandarin Aemconstgt K-27 10° tevvon?} zm 30 top Phaze sit agree 0 Sauare of the voltage applied to the rizr-el lament as 2 function of the phase-shirt ‘4 between normal and extreordinary bean. * Flot Savare of the voltage against the actual phase shife Revised Sep 2009 Revised Sep 2022 Page 9 of 9