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03EC 7903 SEMINAR II

A 65-nm CMOS Constant Current Source With


Reduced PVT Variation

Presented by
Archana S
Roll No:02
S3 M-tech ,VLSI & ES
INTRODUCTION

A new nanometer based low power constant current reference with


small Process-Voltage Temperature variations.
PROBLEM FORMULATION

V th based current reference : process independent, has temperature


dependency

Current summing design: High Power consumption and cost

Current generation using constant overdrive voltage : Supply voltage


dependent.

As technology is scaled down to 100 nm performance degraded due to


the shot channel effects
65 nm CMOS CONSTANT CURRENT
REFERENCE

Pre -regulator

Process tolerant current and process tracking


voltage bias circuit

Temperature compensated VI converter


The current generation - process tolerant temperature compensated
VI converter.

It establishes a constant Vtho reference compensation voltage in series


with another auxiliary compensation voltage

These combined temperature coefficients will match with the linear &
non linear Temperature coefficients of the series resistor in the VI
converter.

The outcome leads to a constant current reference with reduced PVT


variation
ADVANTAGES

Low power

65 nm CMOS technology is used

Better sensitivity figure of merit

With the embedded pre regulator the current reference gives


good line sensitivity
LIMITATION

It has relatively larger area and slightly higher supply voltage due to the
pre regulator stage,

this can be overcome by replacing, the pre regulator stage with a simple
equivalent circuit.
SOFTWARE TOOL

Tanner/ Micro wind


Simulation: Monte Carlo simulation
CONCLUSION

It offers better sensitivity figure of merit compared to other technologies.


REFERENCE
1. A. Bendali and Y. Audet, A 1-V CMOS current reference with temperature
and process compensation, IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 54,
no. 7, pp. 14241429, Jul. 2007.

2. K. Ueno et al., A 46-ppm/C temperature and process compensated current


reference with on-chip threshold voltage monitoring circuit, in Proc. IEEE Asian
Solid-S tate Circuits Conf., Nov. 2008, pp. 161164.

3. K. Ueno, T. Hirose, T. Asai, and Y. Amemiya, A 1-W 600-ppm/C current


reference circuit consisting of subthreshold CMOS circuits, IEEE Trans.
Circuits Syst. II Express Briefs, vol. 57, no. 9, pp. 681685, Sep. 2010.

4. H. Kayahan, O. Ceylan, M. Yazici, S. Zihir, and Y. Gurbuz, Wide range,


process and temperature compensated voltage controlled current source, IEEE
Trans. Circuits Syst. I, Reg. Papers, vol. 60, no. 5, pp. 13451353, May 2013.

5. C. Yoo and J. Park, CMOS current reference with supply and temperature
compensation, Electron. Lett., vol. 43, no. 25, pp. 14221424, Dec. 2007.
THANK YOU

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