JayPee Institute of Information

Technology, Noida.

FGMOS CURRENT MIRROR :BW

ENHANCEMENT
BY: PROJECT TO:
GOPI KRISHNA
[14317188]
M.TECH (MET)

DR. MANISH KUMAR

MR.SHAMIM AKHTAR

INTRODUCTION FGMOS

To presents a high performance, resistively compensated

low voltage current mirror using floating gate MOSFETs
(FGMOS).
Current mirrors (CMs) have been used as basic circuit
element for the design of various low voltage circuit
structures .
Floating gate MOS is similar to conventional MOSFET.
The gate of FGMOS is electrically isolated , and a no. of
secondary gates or inputs are deposited over the floating
gate and are electrically isolated from it.

CONTD..

FG is completely surrounded by highly resistive

material, the charge contained in it remains unchanged
for long period of time.
Usually Hot-Carrier injection scheme is applied to
modify the charge stored in the FG.

INTRODUCTION CURRENT MIRROR

Current mirror is a circuit designed to copy current

through one active device and replicating it to another
active device , keeping the output current constant
regardless of loading.
Important feature of current
mirror is its high output resistance.
It provides bias current and
active loads in amplifier stages.

WORKING

(a)

In FGMOS it is possible to programme the threshold

voltage of FGMOS. For two input FGMOS with
Vs=Vb=0 and C1,C2 >> Cd. Then VFG is

CONTD..

FGMOS CM CIRCUIT

MODIFIED CM

Basic structure of FGMOS cuurent mirror is modified by

adding a resistance (R) in series with capacitance (C2) .
The output short circuit transfer function of the modified
current mirror is given by

MODIFIED CM CIRCUIT

CONTD..

Transfer function has a zero at (-1/RC2) and complex

poles (P1,2) at

CONTD..

If gm1 = gm2 = gm then one of the pole is cancel out by

zero , because zero approaches towards one of poles.
Pole of transfer function is at S= -(gm/3C) .
If the input current increases then the value of gm also
increases , resulting pole at higher frequency. As a result
of this frequency response of the system is improved.
Capacitance (C) is gate to source capacitance which is
process dependent and its value is low when transistor
dimensions are low.

SENSITIVITY

Sensitivity of output current for the change in resistance R

is given as

When R is very high then

Thus, as R increases sensitivity decreases.

REFRENCES:(1) S. Sharma, L.K. Mangotra , S.S. Rajput and S. S.

Jamuar, FGMOS Current mirror: Bandwidth
enhancement SPRINGER, Analog Integrated Circuits
and Signal Processing, 46, 281286, 2006.
(2) S.S. Rajput and S.S. Jamuar, Design techniques for
low voltage analog circuit Structures in Proc. NSM
2001/IEEE, Malaysia, Nov. 2001.
(3) S. S. Rajput and S.S. Jamuar, Low voltage analog
circuit design techniques. IEEE Circuits and Systems
Magazine, vol. 2, no. 1, pp. 2442, 2002.
(4) Design of Analog CMOS Integrated Circuits, Behzad
Razavi, Tata McGraw-Hill 2002 .

THANK YOU