Dispositivos Optoelectrnicos

Dispositivos Semicoductores - DIEC/UNS

Tipos
Fotodetectores:
Detectan cambios de energa fotnica, transformndolos en
energa elctrica

Celdas solares:
Transforman energa lumnica en elctrica

LED / Diodos Laser:

Transforman energa elctrica en energa lumnica

Optoacopladores

Dispositivos Semicoductores - DIEC/UNS

Dispositivos Semicoductores - DIEC/UNS

6x1014 Hz

4.2x1014 Hz

Dispositivos Semicoductores - DIEC/UNS

Fotodiodos p-n
Juntura p-n que permite penetracin de luz en la vecindad de la
unin metalrgica
Absorcin de luz crea pares hueco-electrn

Dispositivos Semicoductores - DIEC/UNS

Fotodiodos p-n
Portadores generados en la zona de vaciamiento son arrastrados por
el E.
Tasa de Generacin ptica: GL
Si W menor que la long. Del diodo, IL es independiente de la tensin
aplicada y proporcional a la intensidad de luz

Dispositivos Semicoductores - DIEC/UNS

Respuesta espectral
Variacin de IL con la longitud de onda de luz incidente

Fotones
pares h-e
Eph>EG.

generan
solo si

Para Si, EG = 1.12

eV, y max=1.1m

Dispositivos Semicoductores - DIEC/UNS

Respuesta espectral
Variacin de IL con la longitud de onda de luz incidente
1) Potencia lumnica es
cte. Por ende, hay
menos fotones de
mayor energa (<)
2) A menor la luz
penetra menos, y la
generacin
se
produce lejos de la
zona de vaciamiento:
se recombinan antes
de llegar all. Menor I

Dispositivos Semicoductores - DIEC/UNS

Fotodiodos p-n
Respuesta Frecuencial
Velocidad de respuesta ante cambios de la luz incidente
Fotodiodo p-n tiene capacidades limitadas
Portadores minoritarios deben difundir hasta la zona de
vaciamiento: proceso lento
Mxima velocidad: decenas de Mhz

Dispositivos Semicoductores - DIEC/UNS

Fotodiodo p-i-n
Top semiconductor thin, to
minimize absorption
i region is depleted
Most of the photocurrent is
generated in the depletion
region

Dispositivos Semicoductores - DIEC/UNS

Fotodiodo p-i-n
i region can be tailored for
specific wavelengths
Frequency response is much
better than Si diodes (most
current is generated in the dep.
Region)
Freq. response about GHz
Aplicaciones en fibra ptica
requieren > 1.1m, y
menores bandgap (In Ga As)

Dispositivos Semicoductores - DIEC/UNS

Fotodiodos de Avalancha
Fotodiodos operados cerca del
punto de ruptura inversa
Ganancia en la generacin de
portadores
Multiplicacin de avalancha
amplifica los portadores
provocados por la luz

Dispositivos Semicoductores - DIEC/UNS

Fotodiodos
Factores Importantes
Velocidad de respuesta
Eficiencia cuntica:

relacin entre fotones y pares h-e

Linealidad
Uniformidad espacial
Ruido oscuro (dark noise)

Dispositivos Semicoductores - DIEC/UNS

 Hamamatsu model S2386 silicon photodiode

Dispositivos Semicoductores - DIEC/UNS

Dispositivos Semicoductores - DIEC/UNS

Toshiba TPS850

Dispositivos Semicoductores - DIEC/UNS

Celdas Solares

Honda dream, the winning car in the 1996 World Solar Challenge. The custom made cells for
the car are greater than 20% efficient. (Photograph PVSRC)

Dispositivos Semicoductores - DIEC/UNS

Celdas Solares
Junturas p-n de gran area
Design to minimize energy losses

Voc: open circuit voltage

Isc: short circuit current
Pmax = Im Vm

Dispositivos Semicoductores - DIEC/UNS

Celdas solares
Medida de desempeo:
eficiencia de conversin

Output from the sun

Area beyond G is power lost
cause it cannot be absorbed
20% lost in Si, 35% in GaAs

The Eph>Eg energy adds

kinetic energy (heat):
40% in Si, 30% in GaAs

Dispositivos Semicoductores - DIEC/UNS

Celdas Solares

Dispositivos Semicoductores - DIEC/UNS

Celdas Solares
Top contact coverage of the cell
surface can be minimised
(although this may result in
increased series resistance).
Anti-reflection coatings on the
top surface of the cell.
Reflection reduced by surface
texturing.
The solar cell can be made
thicker to increase absorption
The optical path length may be
increased by a combination of
surface texturing and light
trapping.

http://www.udel.edu/igert/pvcdrom/index.html
Dispositivos Semicoductores - DIEC/UNS

Celdas Solares

Area: 22cm2
Efficiency: 23.5%
Voc: 703 mV
Isc: 914mA
Jsc: 41.3mA
Vmp: 600mV
FF: 0.81
Imp: 868 mA

Dispositivos Semicoductores - DIEC/UNS

Light Emitting Diode (LED)

Definition: a semiconductor device that emits
incoherent narrow-spectrum light when
electrically biased in the forward direction

Courtesy of Wikipedia
Dispositivos Semicoductores
http://en.wikipedia.org/wiki/LED

- DIEC/UNS

Principle
Forward bias injects majority carriers in opposite regions where
they recombine
In indirect semiconductor (Si) recombination produces heat
In direct semiconductors (GaAs) recombination occurs from band to
band and emits photons

Dispositivos Semicoductores - DIEC/UNS

Principle
Three requirements to produce visible LED
Direct semiconductor (Si, Ge, GaP, AlAs,SiC, excluded)
Bandgap between 1.77eV and 3.10eV (GaAs bandgap too small)
Able to allow pn junction diodes

Need for alloys

Dispositivos Semicoductores - DIEC/UNS

LEDs

= Photo power out/electrical power

External quantum efficiency: is due to reflections in the

Interface air-semiconductor

Dispositivos Semicoductores - DIEC/UNS

Light Emitting Diode (LED)

LED v.s. Incandescent (Edisons lightbulb) and Flourescent Bulbs
Much longer life span (105 - 106 hrs v.s. 103 / 104 hrs)
Suitable for applications that are subject to frequent on-off cycling
Efficiency: better than incandescent but currently worse than
flourescent bulbs

Source: US Department of Energy

http://www.netl.doe.gov/ssl/faqs.htm

Dispositivos Semicoductores - DIEC/UNS

LEDs for lighting

12 Volt MR16 LED spotlight bulbs
Each LED spotlight has 20 ultrabright 15,000mcd LEDs producing
a similar amount of light to a 20W halogen bulb
1 Watt of power!

Dispositivos Semicoductores - DIEC/UNS

LED Efficiency
Internal Quantum Efficiency (int)
Definition: ratio of the number of electrons flowing
in the external circuit to the number of photons
produced within the device
Has been improved up to 80%

External Quantum Efficiency

Definition: The percentage of photons that can be
extracted to the ambient.
Typically 1% ~ 10%
Limiting factor of LED efficiency
Improvement techniques: dome-shaped package,
textured surface, photonic crystal,
Source: Lecture Note of Optoelectronic Devices (by Sheng-fu
Horng, Dept. of Electrical Engrg, NTHU, Hsinchu, Taiwan)

Dispositivos Semicoductores - DIEC/UNS

LED

Dispositivos Semicoductores - DIEC/UNS

Optoacopladores
Aislacin elctrica entre dos
circuitos. Comunicacin ptica
Tpicamente se utilizan haces
de luz entre el rojo al infrarrojo

Dispositivos Semicoductores - DIEC/UNS

 Caractersticas importantes:
Tensin de aislacin
Buena relacin de transferencia
Baja capacidad de
acoplamiento
Imnunidad a interferencias

Dispositivos Semicoductores - DIEC/UNS

Dispositivos Semicoductores - DIEC/UNS

Dispositivos Semicoductores - DIEC/UNS

Dispositivos Semicoductores - DIEC/UNS

Referencias
Robert F. Pierret, Semiconductor Device Fundamentals,
Addison Wesley, 1996. Captulos 6, 9, 14.
Stanley G. Burns, Paul R. Bond, Principles of Electronic
Circuits, PWS Publishing Company, 1997. Captulo 3.

Dispositivos Semicoductores - DIEC/UNS