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PN Junction Formation
PN Junction Diode
Reverse Current
Reverse Breakdown
It occurs for high reverse bias voltage Impact Ionization Avalanche Effect Reverse Breakdown Voltage
Resistance Levels
DC or Static Resistance
AC or Dynamic Resistance
Diode Equation
Dynamic Resistance
The derivative of a function at a point is equal to the slope of the tangent line drawn at that point
Dynamic Resistance
Drift Current
It is defined as the flow of electric current due to the motion of the charge carriers under the influence of an external electric field
Diffusion Current
It is defined as the movement of charge carriers taking place from higher concentration region to lower concentration region of the same type of charge carriers under the presence of concentration gradient
Diffusion Current
Depletion width (d) will increase with increased Reverse-bias potential, the resulting transition capacitance CTwill decrease
Diffusion currents due to electrons & holes at the junction (for x=o) will be in the same direction I = the current at the junction, that is, the total current.
I = Inp(0) + Ipn(0)
Inp(x) + Ipp(x) = I
Ipp(x) =
holes
Ipn(x) + Inn(x) = I
Inn(x) =
electrons
Ipn Inp
Rectifier Circuits Clipping circuits Clamping circuits Demodulation circuits Switch in digital logic circuits used in computers
Reference
Electronic devices by Floyd Electronic devices & circuits by Salivahanan Electronic devices & circuits by Millman & Halkias