INDUSTRIAL ELECTRONICS

Topic
Thyristors

Thyristors
Thyristors are devices constructed of four semiconductor layers (pnpn).
Anode (A) p n p n Cathode (K)
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Thyristors
Thyristors include: Shockley diode, siliconcontrolled rectifier (SCR), diac and triac, PUT and LASCR. They stay on once they are triggered, and will go off only if current is too low or when triggered off. A thyristor is one of the most important types of power semiconductor devices. It can operate as a bistable switch (conducting or nonconducting).
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Thyristors
Due to its voltage and current handling capabailities, a thyristor is the most commonly used semiconductor switch in power electronic applications for many years.

Silicon Power Device Capabilities

Voltage

The Shockley Diode

Anode (A) A A Q1

p n p n
Cathode (K) Basic Construction K Schematic Symbol

Q2
K

Equivalent Circuit
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Shockley Diode Characteristic Curve

IA RS V IH IS 0 IA On Off

VBR(F)

VAK

VBR(F) = forward-breakover voltage IS = switching current IH = holding current

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Shockley Diode Basic Operation

Between 0 V and VBR(F), the Shockley diode is in the forward-blocking region, i.e. off state.

Shockley Diode Basic Operation

At VBR(F), the diode switches to the forwardconduction region and VAK drops to VBE+VCE(sat); IA increases rapidly.

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Shockley Diode Basic Operation

When IA is reduced to < IH, the diode rapidly switches back to the off state.

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A Shockley Diode Application

RS

VBR(F) C
VC

VS

VS > 0 V Relaxation Oscillator

Voltage Waveform

Capacitor charges through RS and discharges through D.

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Silicon-Controlled Rectifier
SCR is another four-layer pnpn device. Has 3 terminals: anode, cathode, and gate.
Anode (A) p n p n

Gate (G)

Cathode (K)
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Silicon-Controlled Rectifier
In off state, it has a very high resistance. In on state, there is a small on (forward) resistance. Applications: motor controls, time-delay circuits, heater controls, phase controls, etc.

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SCR
Anode (A) A

A
Q1

Gate (G)

p n p n

G G K Schematic Symbol Q2 K Equivalent Circuit

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Cathode (K) Basic Construction

Turning The SCR On

+V

IA IA

RA
IH0 IH1 IH2 Q2 IK

Q1 IB2 IG IB1

IG2>IG1 IG1>IG0 IG0=0 VF

VBR(F2) VBR(F1) VBR(F0)

SCR characteristic curves for different IG Values
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Turning The SCR On

+V

IA IA

RA
IH0 IB2 IG0 IB1

Q1

IG0=0 VF

Q2

VBR(F2) VBR(F1) VBR(F0)

IK SCR characteristic curves for different IG Values
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Turning The SCR On

+V

IA IA

RA
IH0 IH1

Q1 IB2 IG1 IB1

IG1>IG0 IG0=0
VF

Q2

VBR(F2) VBR(F1) VBR(F0)

IK SCR characteristic curves for different IG Values
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Turning The SCR On

+V

IA IA

RA
IH0 IH1 IH2 Q2 IK

Q1 IB2 IG2 IB1

IG2>IG1 IG1>IG0 IG0=0 VF

VBR(F2) VBR(F1) VBR(F0)

SCR characteristic curves for different IG Values
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Notes on SCR Turn-On

The positive pulse of current at the gate turns on Q2 providing a path for IB1.
+V RA IA

Q1
IB2 IG2 IB1

Q2

IK
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Notes on SCR Turn-On

Q1 then turns on providing more base current for Q2 even after the trigger is removed.
+V RA IA

Q1
IB2 IG0 IB1

Q2

Thus, the device stays on.

IK
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Notes on SCR Turn-On

The SCR can be turned on without gate triggering by increasing VAK to VBR(F0).
+V RA IA Q1 IB2 IG0 IB1

Q2

IK
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Notes on SCR Turn-On

But IG controls the value of the forward-breakover voltage: VBR(F) decreases as IG is increased.
+V RA

IA
Q1 IB2 IB1

IG

Q2

IK
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Turning The SCR Off

+V +V +V

RA

RA G RA

a) Anode Current Interruption

b) Forced Commutation
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Turning The SCR Off

+V

It simply reduces the anode current to zero and causes the SCR to turn off.
RA

a) Anode Current Interruption

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Turning The SCR Off

+V

It routes part of the total current away from the SCR, thereby reducing the RA anode current to a value less than IH.

a) Anode Current Interruption

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Turning The SCR Off

+V

It momentarily forcing current through the SCR in the direction opposite in the forward conduction G so that the net forward current is reduced below the holding value.

RA

b) Forced Commutation
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SCR Characteristics & Ratings

Forward-breakover voltage, VBR(F): voltage at which SCR enters forward-conduction (on) region. IA

IH IS 0

On Off

VBR(F)

VAK

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SCR Characteristics & Ratings

Holding current, IH: value of anode current for SCR to remain in on region.
IA

IH IS 0

On Off VBR(F) VAK

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SCR Characteristics & Ratings

Gate trigger current, IGT: value of gate current to switch SCR on. Average forward current, IF(avg): maximum continuous anode current (dc) that the SCR can withstand. Reverse-breakdown voltage, VBR(R): maximum reverse voltage before SCR breaks into avalanche.

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SCR Applications

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On-Off Control of Current

An SCR circuit that permits current to be switched to a load by the momentary closure of switch SW1 and removed from the load by the momentary closure of switch SW2.

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Half-Wave Power Control

IL Vin A IP

R1

RL

R2 D1 where f = firing angle = 900 max.

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Half-Wave Power Control

IL Vin A

R1

RL

Control of phase is control of ac power of an SCR commonly on lamp dimmers, electric heaters, and electric motors.

R2 D1

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Silicon-Controlled Switch (SCS)

A A GA Q1 GA

GK
K Schematic Symbol

GK

Q2 K Equivalent Circuit
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Notes On SCS
SCS can be turned on either by a positive pulse at the cathode or a negative pulse at the anode.
GA

Q1

Q1

GA

GK

Q2 K

GK

Q2 K
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Notes On SCS
SCS can be turned off by using pulses of the reversed polarity or by anode current interruption methods.

Q1

GA

Q1

GA

GK

Q2 K

GK

Q2 K
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Notes On SCS
SCS and SCR are used in similar applications. SCS has faster turn-off with pulses on either gate terminal; but it has lower maximum current and voltage ratings than SCR.

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The Diac and Triac

Both the diac and the triac are types of thyristors that can conduct current in both directions (bilateral). They are four-layer devices. The diac has two terminals, while the triac has a third terminal (gate). A1 A
1

G A2 Diac A2 Triac
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The Diac and Triac

The diac is similar to having two parallel Shockley diodes turned in opposite directions.
A1

Q3 Q1

Q2 A2

Q4 Diac
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The Diac and Triac

The triac is similar to having two parallel SCRs turned in opposite directions with a common gate.
A1

Q3 Q1

G Q2 A2

Q4

Triac
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The Diac
A1
n p n p n A2 A2 Basic Construction Symbol IR Characteristic Curve
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IF A1 -VBR(R) IH VR -IH

VF VBR(F)

Diac Equivalent Circuit

A1

R Q3
A1

Q1

Vin
A2 Q2 A2 Q4 Current can flow in both directions
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The Triac
A1 A1 n p n p n Gate n n A1 Q3 Q1 G

A2 Symbol

G Q2

Q4

A2 Basic Construction

A2 Equivalent circuit
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Triac Phase-Control Circuit

D1 RL

Trigger Point (adjusted by R1)

A1

Vin D2

R1

G A2

Trigger Point

Voltage Waveform across RL

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The Programmable UJT

The PUT is actually a type of thyristor It can replace the UJT in some oscillator applications. It is more similar to an SCR (four-layer device) except that its anode-to-gate voltage can be used to both turn on and turn off the device.
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PUT Construction & Symbol

Anode (A) +V R1

p n p n
Cathode (K)

A Gate (G) Vin K G

R2

R3

Basic Construction

PUT Symbol and Biasing

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Notes On PUT
Notice that the gate is connected to the n region adjacent to the anode.
Anode (A) p n p n Gate (G)

Cathode (K)
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Notes On PUT
The gate is always biased positive with respect to the cathode. When VA - VG > 0.7 V, the PUT turns on.

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The Light-Activated SCR

The light-activated SCR (LASCR) operates essentially as does the conventional SCR except it can also be light-triggered. Most LASCRs have an available gate terminal for conventional triggering. The LASCR is most sensitive to light when the gate terminal is open.
Symbol
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