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TRANSISTOR
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PENDAHULUAN
Transistor adalah suatu komponen aktif semikonduktor yang bekerjanya menggunakan pengolahan aliran arus elektron di dalam bahan tersebut. Transistor dapat berfungsi sebagai penguat arus maupun tegangan. Transistor merupakan peralatan yang mempunyai 3 lapis N-P-N atau P-N-P.

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JENIS2 TRANSISTOR

TRANSISTOR : Bipolar Junction Transistor

Konstruksi Transistor adalah piranti semikonduktor tiga terminal yang dibangun dari :
dua material tipe p dan satu material tipe n, atau dua material tipe n dan satu material tipe p.
Heavily doped
E p B n p C E n B p n C

Ujung-ujung terminalnya berturut-turut disebut emitor, base dan kolektor. Base selalu berada di tengah, di antara emitor dan kolektor.

force voltage/current water flow current - amplification

Understanding of BJT

NPN Transistor Structure

The collector is lightly doped.
N

C B

The base is thin and is lightly doped.

The emitter is heavily doped.

NPN Transistor Bias

No current flows.
N

C B

The C-B junction is reverse biased.

NPN Transistor Bias

N

C B

The B-E junction is forward biased.

Current flows.

NPN Transistor Bias

IC Current flows everywhere.

N

C B

When both junctions are biased.... Note that IB is smaller than IE or IC.

IB
N

IE

Note: when the switch opens, all currents go to zero.

Although IB is smaller it controls IE and IC.

IC
N

C B

IB Gain is something small controlling something large (IB is small).

N

IE

IC = 99 mA

The current gain from base to collector is called b.

C
P

IB = 1 mA
99 ICmA IBmA 1

b =

= 99

IE = 100 mA

IC = 99 mA

Kirchhoffs current law:

C
P

IB = 1 mA
IE = I B + I C

= 1 mA + 99 mA
= 100 mA IE = 100 mA

IC = 99 mA

In a PNP transistor, holes flow from emitter to collector.

C B

IB = 1 mA Notice the PNP bias voltages.

IE = 100 mA

Circuit Symbols

Recall: NPN and PNP Bias

Fundamental operation of pnp transistor and npn transistor is similar except for: role of electron and hole, voltage bias polarity, and Current direction

I-V Characteristic for CE configuration : Input characteristic

Input characteristic: input current (IB) against input voltage (VBE) for several output voltage (VCE) From the graph The transistor turned on when VBE = 0.7V
IB = 0 A VBE < 0.7V (Si) IB = value VBE > 0.7V (Si)

I-V Characteristic for CE configuration : Output characteristic

Output characteristic: output current (IC) against output voltage (VCE) for several input current (IB) 3 operating regions:
Saturation region Cut-off region Active region

Current Relationships

Relations between IC and IE : = IC IE Value of usually 0.9998 to 0.9999, 1 Relations between IC and IB : = IC @ IC = IB IB Value of usually in range of 50 400 The equation, IE =IC + IB can also written in IC = IB IE = IB + IB => IE = ( + 1)IB The current gain factor , and is: = @ = . +1 -1

Current Gains
Common Base
a = IC/IE < 1

Common Emitter
b = IC/IB

From Kirchhoff' s Current Law I E IC I B IE IB 1 IC IC 1

a b b a ab b a( 1 b ) b a 1 b

1 b

Gain Factors
IC a IE
Usually given for common base amplifier

IC b IB

Usually given for common emitter amplifier

IE IB

Usually given for common collector amplifier

I-V Characteristic Curves

Operating Point for BJT For each, IB there is a corresponding I-V curve. Selecting IB and VCE, we can find the operating point, or Q point. Applying KVL around the base-emitter and collector circuits, we obtain : IB = IBB VCE = Vcc ICRC
Vcc
RC

IC =

VCE
RC

I-V Characteristic Curves

Vcc VCE

IC =

RC

RC

Load-line curve

NPN Characteristic Curves

PNP Characteristic Curves

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CONTOH SOAL

diketahui: Rc = 2k Rb = 150k Vcc= 10V Vbb= 4V = 100 Buat grafik antara Ic-Vce dan Ib-Vbe Vbe = 0,7 V

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Jawab: Loop 1 Vbb = ib Rb +Vbe 4 V = ib . 150 k + 0,7 V ib = (4 - 0,7) / 150000 ib = 0,022 mA saat ib = 0 maka Vbb = Vbe = 4 V saat Vbe = 0 maka Vbb / Rb = ib = 4 / 150 k = 0,0267 mA

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Loop 2 Vcc = ic Rc +Vce 10 V = ic.2 k + Vce ic = ib . = 0,022 mA . 100 = 2,2mA maka 10 V =2,2mA . 2 k + Vce Vce = 10 (2,2 . 2) = 5,6 V Saat ic = 0 maka Vcc = Vce = 10 V Saat Vce = 0 maka ic = Vcc / Rc = 10 / 2k = 5 mA

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COMON2
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Circuit Configuration

Common-emitter

It is called the common-emitter configuration because (ignoring the power supply battery) both the signal source and the load share the emitter lead as a common connection point.

Common-collector

It is called the common-collector configuration because both the signal source and the load share the collector lead as a common connection point. Also called an emitter follower since its output is taken from the emitter
resistor, is useful as an impedance matching device since its input impedance is much higher than its output impedance.

Collector Characteristic Curve

If VCC = 0, then IC = 0 and VCE = 0 As VCC both VCE and IC When VCE 0.7 V, base-collector becomes reverse-biased and IC reaches full value (IC = bIB) IC ~ constant as VCE . There is a slight increase of IC due to the widening of the depletion zone (BC) giving fewer holes for recombinations with e in base. Since IC = bIB, different base currents produce different IC plateaus.

Common-base

This configuration is more complex than the other two, and is less common due to its strange operating characteristics. Used for high frequency applications because the base separates the input and output, minimizing oscillations at high frequency. It has a high voltage gain, relatively low input impedance and high output impedance compared to the common collector.

Base Biasing
It is usually not necessary to provide two sources for biasing the transistor.
The red arrows follow the base-emitter part of the circuit, which contains the resistor RB. The voltage drop across RB is VCC VBE (Kirchhoffs Voltage Law). The base current is then

VCC VBE IB RC

and

I C = bI B

Base Biasing
Use Kirchhoffs Voltage Law on the black arrowed loop of the circuit
VCC = ICRC + VCE So, VCE = VCC ICRC VCE = VCC bIBRC

Disadvantge
b occurs in the equation for both VCE and IC But b varies thus so do VCE and IC This shifts the Q-point (b-dpendent)

Example
Let RC = 560 W RB = 100 kW VCC = +12 V
@ 25 C VCC VBE 12 V - 0.7 V IB 113A RB 100,000 W

@ 25 C b = 100 @ 75 C b = 150
@ 75 C IB is the same IC = 16.95 mA VCE = 2.51 V IC increases by 50% VCE decreases by 56%

I C b I B (100)(113 A) 11.3 mA
VCE VCC b I B R C 12 V - (100)(113 A)(560 W ) 5.67 V

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DAERAH OPERASI
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BJT Operation Regions

Operation Region
Cutoff Saturation

IB or VCE Char. IB = Very

small

BC and BE Junctions
Reverse & Reverse Forward & Forward

Mode
Open Switch Closed Switch

VCE = Small

Active Linear

VCE =

Moderate

Reverse & Forward Beyond Limits

Linear Amplifier Overload

Break-down VCE = Large

Daerah Aktif
Daerah kerja transistor yang normal adalah pada daerah aktif, dimana arus IC konstans terhadap berapapun nilai VCE. Dari kurva ini diperlihatkan bahwa arus IC hanya tergantung dari besar arus IB. Daerah kerja ini biasa juga disebut daerah linear (linear region).

 Jika hukum Kirchhoff mengenai tegangan dan arus diterapkan pada loop kolektor (Rangkaian CE), maka dapat diperoleh hubungan :

VCE = VCC - ICRC

Dapat dihitung dissipasi daya transistor adalah : PD = VCE.IC Rumus ini mengatakan jumlah dissipasi daya transistor adalah tegangan kolektor-emitor dikali jumlah arus yang melewatinya

Dissipasi daya ini berupa panas yang menyebabkan naiknya temperatur transistor. Umumnya untuk transistor power sangat perlu untuk mengetahui spesifikasi PDmax. Spesifikasi ini menunjukkan temperatur kerja maksimum yang diperbolehkan agar transistor masih bekerja normal. Sebab jika transistor bekerja melebihi kapasitas daya PDmax, maka transistor dapat rusak atau terbakar.

Daerah Saturasi
Daerah saturasi adalah mulai dari VCE = 0 volt sampai kira-kira 0.7 volt (transistor silikon), yaitu akibat dari efek dioda kolektor-base yang mana tegangan VCE belum mencukupi untuk dapat menyebabkan aliran elektron.

Daerah Cut-Off
Jika kemudian tegangan VCC dinaikkan perlahan-lahan, sampai tegangan VCE tertentu tiba-tiba arus IC mulai konstan. Pada saat perubahan ini, daerah kerja transistor berada pada daerah cut-off yaitu dari keadaan saturasi (On) menjadi keadaan mati (Off). Perubahan ini dipakai pada system digital yang hanya mengenal angka biner 1 dan 0 yang tidak lain dapat direpresentasikan oleh status transistor OFF dan ON.

Breakdown Voltages

Output Characteristics
Plot IC as f(VCE, IB) Cutoff region (off)
both BE and BC reverse biased

Active region
BE Forward biased BC Reverse biased

Saturation region (on)

both BE and BC forward biased
ECE 442 Power Electronics 46

Transistor Operating Point

VB VBE IB RB VCE VCC IC RC RC VCE VCC I C RC

47 ECE 442 Power

Load Line
Slope of the load line is 1/RL

For a constant load, stepping IB gives different currents (IC) predicted by where the load line crosses the characteristic curve. IC = bIBworks so long as the load line intersects on the plateau region of the curve.

Example

We adjust the base current to 200 A and note that this transistor has a b = 100
Then IC = bIB = 100(200 X 10-6A) = 20 mA

Notice that we can use Kirchhoffs voltage law around the right side of the circuit
VCE = VCC ICRC = 10 V (20 mA)(220 W) = 10 V 4.4 V = 5.6 V

Example

Now adjust IB to 300 A

Now we get IC = 30 mA And VCE = 10 V (30 mA)(220 W) = 3.4 V

Finally, adjust IB = 400 A

IC = 40 mA and VCE = 1.2 V

Plot the load line

VCE 5.6 V 3.4 V 1.2 V

IC 20 mA 30 mA 40 mA

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AC ANALISIS
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Transistors with ac Input

Assume that b is such that IC varies between 20 and 40 mA. The transistor is constantly changing curves along the load line.

Pt. A corresponds to the positive peak. Pt. B corresponds to the negative peak. This graph shows ideal operation.

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BJT AMPLIFIER
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BJT as Amplifier
Common emitter mode Linear Active Region Significant current Gain Example: Let Gain, b = 100 Assume to be in active region -> VBE=0.7V Find if its in active region

BJT as Amplifier
VBE 0.7V I E I B I C ( b 1) I B VBB VBE 5 0.7 IB 0.0107mA RB RE *101 402 I C b * I B 100 * 0.0107 1.07mA VCB VCC I C * RC I E * RE VBE 10 (3)(1.07) (2)(101* 0.0107) 0.7 3.93V
VCB>0 so the BJT is in active region

Transistors as Amplifiers
BJT common emitter mode In Linear Active Region Significant current Gain

Example let Gain, b = 80 VB = 2V VE = 1.3V

Find IC and VC

Transistors as Amplifiers
VBE = VB VE = 0.7V IB = VBB VB 4-2 = 40,000 RB = 50 A IC = b x IB = 80 x 50 A = 4mA

VC = Vcc IC x RC = 12 (4x10-3)(1x103) =8V

VCE = VC VE = 8 1.3

= 6.7 V

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BJT SWITCH
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Transistors as Switches BJT Inverter

Use of the cutoff and saturation regions in the I-V curves. VCE = Vcc - (IC)(RC) Vout = VCE

Transistors as Switches BJT Inverter

Vin Low Cutoff region No current flows Vout = VCE = Vcc Vout = High

Vin High Saturation region VCE small Vout = small Vout = Low

BJT Transistor Switch

VB VBE IB RB VCE VCC I C RC VCE VCB VBE VCB VCE VBE

63

Transistors as Switches

Details
In Cut-off
All currents are zero and VCE = VCC

In Saturation
IB big enough to produce IC(sat) bIB

Using Kirchhoffs Voltage Law through the ground loop

VCC = VCE(sat) + IC(sat)RC but VCE(sat) is very small (few tenths), so IC(sat) VCC/RC

Example
a) What is VCE when Vin = 0 V? Ans. VCE = VCC = 10 V b) What minimum value of IB is required to saturate the transistor if b = 200? Take VCE(sat) = 0 V IC(sat) VCC/RC = 10 V/1000 W = 10 mA

Then, IB = IC(sat)/b = 10 mA/200 = 0.05mA

Example

LED

If a square wave is input for VBB, then the LED will be on when the input is high, and off when the input is low.

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PENGUKURAN
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BJTs Practical Aspects

Heat sink

BJTs Testing

BJTs Testing

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RANGKAIAN APLIKASI
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Fungsi dan Penggunaan Transistor antara lain : - Penguat Arus dan Tegangan digunakan pada penguat - Pembangkit getaran (Osilator) Di Gunakan Pada Radio - Saklar listrik Di gunakan pada saklar : - Otomatis - Pengaman - Timer - dan lain-lain

Applications
Switching Amplification Oscillating Circuits Sensors

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FIELD EFFECT TRANSISTOR

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JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR )

VOLTASE MASUK MELALUI GATE (INPUT) YANG AKAN MENGATUR TAHANAN DI CHANNEL YANG AKAN BERPENGARUH PADA ARUS DARI SOURCE MENUJU DRAIN

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

TIPE-P BERFUNGSI SEBAGAI GATE TERJADI DEPLESI/PENIPISAN PADA CHANNEL KARENA GERAKAN ELEKTRON PADA GATE KONDUKSI ARUS TIDAK ADA SAMPAI SANGAT KECIL

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

TIPE-P BERFUNGSI SEBAGAI GATE DENGAN MEMBERIKAN REVERSE BIAS, DEPLESI CHANNEL AKAN BERTAMBAH, SEHINGGA TAHANAN DARI SOURCE KE DRAIN MENINGKAT

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

TIPE-P BERFUNGSI SEBAGAI GATE REVERSE BIAS PADA GATE DIPERBESAR SEHINGGA MEMPERBESAR AREA DEPLESI MEMPERKECIL JALUR PADA CHANNEL MEMPERBESAR TAHANAN CHANNEL DARI SOURCE MENUJU DRAIN

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

TIPE-P BERFUNGSI SEBAGAI GATE REVERSE BIAS PADA GATE DIPERBESAR SEHINGGA MEMPERBESAR AREA DEPLESI TERJADI PINCH-OFF(PINCH-OFF VOLTAGE),KARENA KECILNYA VOLTASE YANG DAPAT LEWAT DARI SOURCE MENUJU DRAIN

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

LEBIH SINGKAT BAHWA RESISTANSI PADA CHANNEL DAPAT DIKONTROL DENGAN DERAJAT/BESAR REVERSE BIAS YANG BERIKAN PADA GATE

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) N-TYPE

GERAKAN ELEKTRON FET TIPE-N ARUS ELEKTRON MENGALIR DARI KUTUB NEGATIF SUMBER TEGANGAN, KE SOURCE,MENUJU DRAIN

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR )

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) P-TYPE

BILA DIBERIKAN FORWARD BIAS BAGIAN CHANNEL DIBUAT DARI BAHAN TIPE-P GATE TERBUAT DARI BAHAN TIPE-N ARAH VOLTASE DIBALIK PADA CHANNEL TIPE-P

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) SIT (STATIC INDUCTION FET)

MERUPAKAN PERANGKAT POWER FAST SWITCHING DEVICE, KARENA MEMILIKI TAHANAN GATE DAN KAPASITANSI DARI GATE MENUJU SOURCE YANG LEMAH

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) SIT (STATIC INDUCTION FET)

DIGUNAKAN SEBAGAI PENGUAT GELOMBANG MICRO SAMPAI DENGAN 10 gHz

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) MESFET (METAL SEM.CON FET)

HAMPIR SAMA DENGAN JFET TETAPI BAHAN P YANG DITAMBAHKAN MENGHASILKAN RESISTANSI YANG LEBIH KECIL BAHAN-BAHAN YANG DIGUNAKAN : SILIKON, GALIUM ARSENIDE, INDIUM PHOSPHIDE, SILIKON CARBIDE, DIAMOND ALLOTROPE DARI CARBON.

JUNCTION F.E.T ( FIELD-EFFECT TRANSISTOR ) MESFET (METAL SEM.CON FET)

DIGUNAKAN SEBAGAI PENGUAT GELOMBANG MICRO SAMPAI DENGAN FREKUENSI 30 GHz

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CONTOH SOAL

diketahui: Rc = 3k Rb = 140k Vcc= 9V Vbb= 5V = 100 Buat grafik antara Ic-Vce dan Ib-Vbe Vbe = 0,7 V

Example
Let RC = 500 W RB = 90 kW VCC = +12 V
@ 25 C VCC VBE 12 V - 0.7 V IB 113A RB 100,000 W

@ 25 C b = 80 @ 75 C b = 120
@ 75 C IB is the same IC = 16.95 mA VCE = 2.51 V IC increases by 50% VCE decreases by 56%

I C b I B (100)(113 A) 11.3 mA
VCE VCC b I B R C 12 V - (100)(113 A)(560 W ) 5.67 V

Example
20 a) ib= 150 uA b) Ib= 200 uA c) Ib= 250 uA

Now adjust IB to 300 A

Now we get IC = 30 mA And VCE = 10 V (30 mA)(220 W) = 3.4 V

Finally, adjust IB = 400 A

IC = 40 mA and VCE = 1.2 V

Transistors as Amplifiers
BJT common emitter mode In Linear Active Region Significant current Gain

Example let Gain, b = 100 VB = 4V VE = 1.5V

Find IC and VC