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Exam Roll No .

END TERM EXAMINATION IPaper

1

SIXTH SEMESTER [B. TECH) MAy - JUNE 2011

Code: ETEE 302 Time: 3 Hours

Subject: Microprocessor Maximum Marks: 75 N_o_t_e._ Q-'.,_N_o_, 1_'_'s_c_o_m..!.'P_u_ls_o--,ry~._A_tt_e_m...!.'P_t_o_n_e-,q,--u_es_t_io_n_fl_,,_om_e_a_c_h_u_n_it_,

---1
(2)

Q.l

(a) Explain following pins of8085 microprocessor (i) READY (ii) HOLD

(b) Why lower order address buss (Ao - A7) is multiplexed with Data Bus (Do - 07) and how it is demultiplexed? (3) (c) Write any four instructions to clean the contents of accumulator. (2)

(d) How many machine cycles are required for execution of JNC instruction in both the cases when the condition is true or false. (2) (e) The last address of a 2KB RAM is (FFFF) H what would be the starting address?

wD e ,N e (g) Explain the difference between hardware and software g (3) e interrupts. ll o (h) Name the command word to be used and indicate the contents of the command word gC required to configure the 8259 for rin following operations (2) ee n a. ICW4 is' to be usedi ngto be used in the system b. Several 8259 are E c. The ia address interval is required to be 4 bytes d d.In IRo. requests are to be level triggered. Assume starting address for IRo The ern routine is 2480H. orth
(f) Write instruction to configure port A of 8255 as input port in mode-O, Port Bas output port in mode-l and port c as input port. The address of the control register of 8255 is FFH. (2)
7

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(2)

(i) In 8086 why memory is organized as 2 byte - wide banks. (4+3) If the code segment for an 8086 program starts at address 70400H, what number will there in CS Register? Assuming the same code segment base, What physical addtress will a code byte be fetched from if the instruction pointer contains 539CH?

UNIT-I
Q.2 Q.3 Draw and explain the internal architecture of 8085 microprocessor. (i) Name all the status and control signals of 8085 microprocessor each one ofthem. (ii) Draw the timing diagram for the instruction MOVB,M Assume HL = 2000H (12.5) and explain (6) (6.5)

UNIT-II

Q.4

[-2-] (i) Write 8085 assembly language program to shift a 16 bit binary number l-bit to the ~M. ~ (ii) Write a program to convert a BCD number to binary number. (4.5)

Q.5

(iii) Explain the following instructions (4) (a) LHLD (b)XCHG (c) XTHL (d) PCRL (e) (i) Write an 8085 assembly language program to divide a I6-bit number by an 8bit number. Assume that 16 bit number is available at location 2000 and 2001 and 8 bit number is at 2002H. Store result at 2003H. (7) (ii) Write 8085 assembly language program to add two 24-bit numbers. (5.5)

UNIT-III
Q.6

(i) Inter face 8085 microprocessor with 2K x 8 ROM chip and two lK x8 RAM chips such that the following address map is realized. (8) Device Size Address ROM 2Kx8 0000-07FFH RAM 1 1x8 IOOO-13FFH RAM 2 Ix8 4000-43FFH (ii) What do you understand by absolute proper example.

(4.5) ring ee Q.7 (i) Design the memory in interfacing circuit for an 8085 based microcomputer g system having following specifications: (8) En a (i) 8K x 8 ROM - One chip nd8i RAM - 4 chips rn I2K xGive the memory map. There must not be any fold back memory space. e (ii) orth (ii) Explain, with the helps of proper example, the difference between memory mapped and I/O mapped I/O? (4.5)

wD Ne ge, olledecoding? Explain with and partial C

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UNIT-IV
Q.8 (i) Write an 8085 program to generate a continous square wave of 1KHz using 8253. The 8253 is mapped at port address 20H. (5) (ii) What is the difference between synchronous and asynchronous serial transfer? ~~ ~ (i) TxRDY (ii) TxE (iii) Explain specially fully nested mode of 8259 PIC. (3.5) (i) Draw block diagram of 8237 and explain its operation. (5) (ii) Write an 8086 assembly language program to turn on an LED connected to bit 3 of port C of 8255. It should be turned off after 1 sec. Assume clock frequency to be 1 MHz. (4) (iii) Explain whysegment register-in 8086 are also called relocation register? (3.5)

Q.9

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SIXTH SEMESTER [B.TECH.]- MAY 2011 [Paper Code: ETEE304 Subject: Power System-II Time: 3 Hours Maximum Marks: 75 Note: Attemptfive questions including Q.no.l which is compulsoru. Internal choice is indicated. Calculator is permitted.

Q1

ern orth

Select the most appropriate choice and justify your choice for the following questions:(2.5xlO=25) (a) The p.u. impedance of a circuit element is 0.15. If the base KVand base MV are halved, then the new value of the per unit impedance A of the circuit element will be(i) 0.075 (ii)0.15 (iii)0.30 (iv)0.60 (b) A balance three phase system consist of(i) Zero sequence current only (ii) Positive sequence current only (iii)Negative and zero sequence current only (iv)Zero, negative and positive sequence current. (c) Series reactors are used to(i) Improve the transmission efficiency (ii) Improve P.F. of the power system. (iii)Improve the voltage regulation. (iv)Bring down the fault level within the capacity of the switch gear. (d) In a circuit breaker the current that exists at the instant of contact separation is called the(i) Restriking current (ii)Breaking current (iii)Arc current (iv)Recovery current (e) Air used in air blast C.B. must(i) Be ionized (ii)Be free from moisture (iii)Have least C02 (iv)Have oil mist (f) A fuse is(i) Normally inserted in phase wire (ii) Normally inserted in neutral wire (iii)Never inserted in neutral wire (iv)Never inserted in phase wire (g) Given rPllII' rP2111 the fluxes produced by the two portions of the =

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shaded pole 8=the angle between rP2m' R=resistance of the disc, the torque developed in an induction relay would be proportional to which of the following:- (A) rPllII' 2m (B) IjR (C) R (D) Sine. Select the correct answer using the codes given below:(i) (A),(B) & (D) (ii) (A),(C) & (D) (iii)(A)& (B) (iv)(B) & (D) (h) For the protection of a 3phase star/Delta transformer the CTs for the differential relay should be connected. (i) Delta/star (ii) Delta/Delta (iii)Star/Delta (iv)Star/Star (i) Shunt capacitor in a substation(i) Consume Lagg. Var (ii)Deliver Lagg. Var (iii)Consume active power (iv)Deliver active power U) A transmission line is protected by(i) Distance protection (ii)Inrush current protection (iii)Timegraded protection (iv)Both (i) & (iii)

P.T.O.

[-2-]

Q2

Q2

(a) A generating station has two 3 phase alternators, one 12MVA, 20% reactance and the other 8MVA, 24% reactance. Both are rated at 6.6KV. The two alternators are connected to 33KV bus bars step up transformers, the first through a through 6.6/33KV 15MVA, 10% reactance and the second through a 12MVA, 12% reactance. A feeder is taken out from the 33KV bus bars, the reactance of the feeder being 200. A 3 phase dead short circuit fault occurs at the load end of the feeder. The actual generation voltage of the first generator is 6.6KV while that of the second is 6.5KV. Calculate the fault current. (10) (b)Write short notes on common faults in power systems. (2.5) OR The currents flowing in the lines of a balanced load connected in delta (12.5) are Ia = 10LOo, lb = 14.14L225 and Ie = 10L900. (a) Show that
lahl

is

L300

and

l"h2

=]

L -300 .(and

similarly for

w Ne e, grelay? Give the Q3 What are the fundamental requirement olle of a C classification of relays. Describe and define the following terms:(12.5) (a) Pick up (b) Reset or drop off (c) Drop off/Pick up ratio ng eri OR e Q3 Give the differences betweenn fuse and a circuit breaker. Explain the gi abreaker with the help of a neat diagram.(12.5) working of an air blast circuit En ia dneat diagram, a circulating current protection scheme Q4 Describe with a In for a rn 3 phase, 1MV A, 11KV / 400V Delta/ star transformer. If the current rthe transformers have a nominal secondary currents of 5A, ocalculate their ratios. (12.5) N OR
Q4

other line and phase currents) where lal and labl are the positive and la2 and Iab2etc are the negative sequence components of line and phase currents respectively. (b) Evaluate the phase current lab from symmetrical components ral, la2 and Iao of the line current la for the data given above.

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Describe distance protection scheme for the protection of feeders. Explain why distance protection scheme is superior to other types of protection for an over head line. (12.5) Explain clearly what do you mean by compensation discuss briefly different methods of compensation? OR Explain with neat diagram the operation of(a) Thyrister switched capacities (b) Saturated reactor compensator of line and
(12.5) (12.5)

Q5

Q5

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Paper Code: ETEE 306 Subject; Power Electronics Maximum Marks: 75 Time: 3 Hours Note: Attempt all questions. Internal choice is indicates, Q.No.1 is compulsory. Assume suitable data if any

Q.l

(a) Discuss with help of a diagram the following: (i) DIAC (ii)TRIAC

(5)

(b) Discuss the PWM scheme for inverters (5) (c) Explain the working of single phase to single phase cycloconverters.(5) (d) Explain why serious-turn-off chopper are used for low supply voltage.(5) (e) What is fuse protection? Explain the terms time-current characteristics and 12trating with respect to operating data of fuse. (5) Q.2 (a) Explain SCR triggering using IC timmer 555. (6) (b) Discuss the factors responsible for increase of junction temperature in power semiconductor devices. (6.5)

wD Ne class B Q.3 (a) What is forced commutation circuit? Discuss class A and ge, forced commutation circuit. (10) olle (b) Explain Repetitive overload current rating of SCR. (2.5) gC Q.4 (a) Explain the working of Rectifier with resistive - capacitive load. (7.5) erindiagrams (5) ne (b) Discuss the following with proper gi (i) Dual converters n (ii)Transformer leakage inductance ia E Ind ern the working of single OR half controlled bridge rectifier Q.5 t(a) Explain phase h RL load. (7.5) or (b) with fly wheel diode andregulated D.C power supplies using thyristors.(5) N Discuss the working of
OR
Q.6 What are inverters? Explain with proper waveform working of current. driven inverters. (12.5)

lhi e

OR
Q.7 (a) Explain the working of an inverter with inductive load. (7.5) (b) With the help of a neat diagram explain the working of a Me-Murray single phase inverter. (5) (a) Discuss the working of a Type B chopper. (5) (b) Explain with proper wave form the working of parallel capacitor turn off chopper. (7.5)

Q.8

OR
Q.9 Explain the following: (i) Four Quadrant chopper (ii) Morgan chopper . (6.5)

(6)

,.
(Please write-your Exam Roll No.] Exam Roll No .

'.

....

END TERM EXAMIN'ATION

MAY201l

Paper.code: ETIT30B Time: 3 Hours Note: Attempt one question/rom

Subject: Digital Signal Processing Maximum Marks: each unit including Q.no.l which is compulsory.

75

Ql

(a) Let x(n) = 25(n + 2) - 5(n + 1)+ 35(n) - 5(n -1) + 25(n - 2). Evaluate (i) X(e1w)ev

= a (ii) [X(e

JW

~ev

(iii) X(eJaJ)ev

= 2tr

without

explicitly

finding X(eJaJ). (6) (b) Find the state variable matrix A, 8, C, D for the input output relation given by the equation(5) yen) = 2y(n -1) + 3y(n - 2) + x(n) + 2x(n -1) + 3x(n - 2) . (c) Derive the relationship between DFT (i) 2 transform (ii) Fourier transform of an aperiodic sequence. (4) (d) Discuss the design of digital resonator. (5) (e) Derive the input and output relation for a system function h(t) if (5) the input signal x(n) is random. UNIT-I (a) Perform the convolution of the following two sequence
h(n)={(ll2)"

Q2
~ . t,

1-.

L/

otherwise

(b) Find the '2' transform the following sequence:-

ia E nd X(Z) = 1+ 114Z-1 ,/Z/ > 2 (ii) X(Z) (i) I rn (1-II2Z- Y rthe(b) Compute the DTFT of the following:o
Q3

(i) x(n)=

n(1I2)nu(n-2)

(a) Find the inverse 'Z'transformI

ring e ine (ii) ng

0~n~2,

x(n)=5(n)+5(n-1)+45(n-2).

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1
I-II
1+5/6Z1

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(6)

x(n)=lIn(-2)-"u(-n-l) (6)

=
UJo

4Z+1I6Z- '
2

/Z/ > 112 (6.5)

(i) x(n) = LI(n) (ii) x(n) = Cosoun with (iii)yen) - 3/ 4y(n -1) + 1/8y(n - 2) = x(n)

= 2tr15.

Q4

UNIT-II (a) Perform the circular convolution and linear convolution for the x2 Discuss the result. (6.5) input sequence XI (n) = {1,2,3,1,2} (n) = {1,2,3,4}. (b) Determine the DFT of the given data sequence x(n) = {-1,2,-3,4,9,-20,12,6}usingDIT algorithm. (6) (a) Prove the following properties of DFT when X(k) is the N point DFT- (6) (i) If x(n) is real and odd. (ii) If x(n) is purely imaginary and odd. (b) Calculate the IDFT for the given coefficient X(k) = {38, - 5.828 + )6.07, )6, - 0.172 + )8.07, -10, - 0.172 - j8.07, -)6, - 5.828 - j6.07} using DIF structure. (6.5)

Q5

P.T.D.

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~,

-."...,

.\
j~

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Q6
(a)

,!

[-2-]

UNIT-Ill Eor the following causal linear shift invariant system factorize H(Z) in form H(Z) = H mio (Z)Hap (Z) , (i) H(Z)

= (1- 3Z- XI + O,5Z2

'1_ 0.75Z-1

(6)

(b) Consider the random process X(t) = ySinnot + ZCosnot where no is constant. Y and Z are uncorrelated random variables ie E[Y, z] = E(YJE[ Z] = 0, with zero mean and variance (52. (i) Find mean of X(t) (ii) Auto correlation of X(t). (6.5)

Q7

(a) Explain the sampling theorem in the frequency domain. Discuss the design of zero order hold ckt, (8.5) (b) Consider a linear shift invariant system with system function
, Z-1

H(Z)
\

1-

.
,It". ,

:;1

lal

< 1.

(4)

!j

,
1\

--"'\
I
j~

,
'.
i-.-:: n r',~~ i} al"l" ,! r . .
~

!~.
1 ' lib;, \'
I,

'l' t)t : \,'.: .;~ ~ t,l' l . ~,

I,

i \. j ..,

w NXe -1 X ') = Z2 Q8 (a) Give the system transfer function H(Z) g(e, Z-l/2 Z-1/3 Z-1/4 leform (iii) canonic form. (6) ol realize H(Z) as (i) parallel form (ii) cascade C (b) Design the digital butterworth g filter satisfying the constraint given below T=1 using bilinear transformation erin ne 1112 ~IH(eJOI)I~l gi (6.5) n for ia E0.2 for 4 ~ s n: Ind the properties of Chebyshev polynomial. '. (a) Discuss Q9 ern a high pass filter where the desired frequency response (2.5) (b) Design is orth given below wit.h =3 and = 2rad / S using a window with stop
UNIT-IV
O~OJ~7f/2
37f /

(i) Find a difference equation to implement this system. (ii) Show that this system is an all pass system.

elh D

iH(eJ(li

OJ

t:

OJe
JOI

, 'j
!

band attenuation

-53dB,

HAe )= -

e - 101Z {
0

OJ

otherwise

(' < IOJI ,- 7f - <

(10)

************

(Please write your Exam. Roll No.)

Exam. Roll No

END TERM EXAMINATION

SIXTH SEMESTER
Paper Code : ETEE - 310

[B. TECH],

MAY - 2011
Utilization of Electrical Energy

Subject:

Time: 3 Hours
Note: Question No. 1 is compulsory. Attempt remaining

Maximum Marks: 75
'Iuestions as per choice indicated.

,Q. 1. (a)

Explain the factors that must be taken into account while selecting motor for a particular suggest drive for (i) Paper mill work. On the basis of these

(5x5=25)

Q. 2. Discuss in detail how regenerative

traction motors.

w Ne (b) Briefly discuss the special design features of traction motors. e gfor ,using (c) Compare the merits of alternative lighting schemes le l Co in candescent lamps, sodium vapour lamps or fluorescent lamps for industrial lighting. ring nee (d) Describe how plugging and rheostatic braking employed withd.c. ngi motors. ia Esketches the various methods of electric (e) Describe nd neat I with n resistance welding. her ort N
Oi) Cranes braking can be obtained with

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(12.5)

OR
, , ,

A low frequency indu~tion furnace operating at 10 volts in the econdary circuit takes, 500 kW at 0.5 pf when the hearth is full. If the econdary voltage be maintained at 10 volts, frnd the powerabsorbedand the power factor when the hearth is halful. Assume the resistance of the secondary circuit to be thereby doubled and the reactance is same.

P.T.O.

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I I----------------~--~--~--~------------------.
Q.l (a) Described the parasitic effects in MOS device. (4) (b) What will be the output of a chain of pass transistors whose gates are tied to 5V and input is 3V. Assume VT, passtransistor = O.05V. (2) (c) Explain latchup phenomenon in CMOS technology with suitable diagram. How can it be avoided? (4) (d) Explain ion implantation (4) (e) Why is pseudoNMOS logic style more suitable for PLA structures. (4) (f) How would you identify PMOS enhancement transistor and depletion mode NMOS transistor from its characteristics. (3) (g) Draw a schematic of pass transistor based 4: 1 multiplexer realization. (4) UNIT-I Q.2

SIXTH SEMESTER [B.TECH MAy -JUNE 2011 Paper Code: ETEE 312 Subject: VLSI Design & Its Applications Time: 3 Hours Maximum Marks: 75 Note: Q.No.1 is compulsory. Attempt one question from each unit.

(a) Draw energy band diagram of an NMOS structure biased in (i) accumulation (ii) depletion (iii) inversion regions (6.5) 2 (b) An NMOS transistor with kn = 20).!AN and VT = 1.5V is operated with Vgs = 5V and In = lOO).!A. (6) Determine the region of operation of NMOS and find Vds. (a) What is the need of sizing transistors of an inverter? Compute pull up to pull down ratio for a symtnetrical CMOS inverter. (6.5) (b) Derive an expression for t: PLH for CMOS inverter. (6)

Q .3

ern orth
Q.4 Q.5

(a) Implement a 4: 1 multiplexer with pass transistor logic. Is there any need of sizing the transistors? (6.5) (b) Draw a 6 transistor XOR cell and explain its working. (6)

ia E Ind

ring e ine ng
UNIT-II

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(a) Explain the working of dynamic shift register with respect to ratioed and ratioless logic. (6.5) (b) Describe the functioning ofa SRAM memory cell. (6) UNIT-III

Q.6

What are the steps of fabricating an enhancement mode NMOS transistor, Aid your answer with suitable diagrams. (12.5) What is electronic grade silicon? Discuss Czochralski crystal growth method in detail.(12.5) UNIT-IV

Q.7

Q.& Q.9

Discuss VLSI description domains and level of design abstraction levels with Y chart.(l2.5) Explain the following terms with respect to chip design: hierarchy, modularity and regularity. Give an example of each. (12.5)