Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data

AT-41435

Features
Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz High Gain-Bandwidth Product: 8.0 GHz Typical fT Cost Effective Ceramic Microstrip Package

interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1 GHz, makes this device easy to use as a low noise amplifier. The AT-41435 bipolar transistor is fabricated using Agilents 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device.

35 micro-X Package

Description
Agilents AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger

AT-41435 Absolute Maximum Ratings

Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Thermal Resistance [2,5]: jc = 200C/W

Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5 mW/C for TC > 100C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section Thermal Resistance for more information.

Electrical Specifications, TA = 25C

Symbol |S 21E P1 dB G1 dB NFO |2 Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. 11.5 6.0 19.0 18.5 14.0 9.5 1.3 1.7 3.0 18.5 14.0 10.0 8.0 30 150 270 0.2 1.0 2.0 Max.

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

dB 13.0 GHz A A pF

fT hFE ICBO IEBO CCB

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

0.2

Note: 1. For this test, the emitter is grounded.

AT-41435 Typical Performance, TA = 25C

24 21 18
GAIN (dB)
GA

24
P1 dB (dBm) GAIN (dB)

16 15 14 13 12 4
G1dB 4.0 GHz NFO 4V 6V 10 V GA 10 V 6V 4V

20

2.0 GHz 4.0 GHz P1dB

15 12 9 6
NF50

16 8 6
G1 dB (dB) NF (dB)

2.0 GHz

12

4
NFO

3 2 1

3 0 0.5 1.0 2.0

0 3.0 4.0 5.0

10

20

30

40

10

20

30

40

FREQUENCY (GHz)

IC (mA)

IC (mA)

Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA.

Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V.

Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz.

16
GAIN (dB)

40
2.0 GHz

20

14 12
GA

35 30
GAIN (dB)

16
|S21E|2 GAIN (dB)

1.0 GHz

MSG

10 8

4.0 GHz

25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz)

MAG |S21E|2

12
2.0 GHz

4
NFO 2.0 GHz

NFO (dB)

4.0 GHz 6

8
4.0 GHz

2 0 10 20 30 40

10

20

30

40

IC (mA)

IC (mA)

Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V.

Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA.

Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V.

NFO (dB)

AT-41435 Typical Scattering Parameters,

Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .80 -32 28.0 24.99 157 0.5 .50 -110 21.8 12.30 108 1.0 .40 -152 16.6 6.73 85 1.5 .38 -176 13.3 4.63 71 2.0 .39 166 11.0 3.54 60 2.5 .41 156 9.3 2.91 53 3.0 .44 145 7.9 2.47 43 3.5 .46 137 6.7 2.15 33 4.0 .46 127 5.6 1.91 23 4.5 .47 116 4.7 1.72 13 5.0 .49 104 4.0 1.58 3 5.5 .52 91 3.3 1.45 -7 6.0 .59 81 2.5 1.34 -17

dB -39.2 -29.6 -26.2 -24.0 -21.9 -20.4 -18.8 -17.5 -16.0 -15.0 -13.9 -13.0 -12.1

S12 Mag. .011 .033 .049 .063 .080 .095 .115 .133 .153 .178 .201 .224 .247

S22 Ang. 82 52 56 59 58 61 61 58 53 50 47 40 36 Mag. .93 .61 .51 .48 .46 .44 .43 .43 .45 .46 .48 .47 .43 Ang. -12 -28 -30 -32 -37 -40 -48 -58 -68 -75 -82 -89 -101

AT-41435 Typical Scattering Parameters,

Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 25 mA S21 Freq. S11 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .63 .39 .36 .36 .38 .40 .43 .45 .46 .46 .47 .51 .58 -50 -137 -171 171 156 149 140 132 122 112 101 89 79 31.8 22.9 17.2 13.9 11.5 9.8 8.3 7.2 6.1 5.2 4.4 3.7 3.0 39.08 13.97 7.28 4.94 3.76 3.08 2.61 2.28 2.02 1.82 1.66 1.54 1.41 146 99 80 68 58 52 43 33 23 14 4 -5 -15

dB -40.0 -31.4 -27.1 -23.5 -21.6 -19.6 -18.3 -16.8 -15.6 -14.6 -13.7 -12.6 -11.8

S12 Mag. .010 .027 .044 .067 .083 .105 .122 .144 .165 .185 .207 .233 .257

S22 Ang. 83 60 67 66 63 63 64 59 55 50 45 39 33 Mag. .84 .50 .45 .43 .41 .39 .38 .39 .40 .42 .43 .42 .37 Ang. -18 -26 -26 -30 -34 -38 -47 -57 -67 -75 -81 -89 -101

A model for this device is available in the DEVICE MODELS section.

AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA

Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.2 1.2 1.3 1.7 3.0 opt Mag .12 .10 .05 .30 .54 Ang 3 14 28 -154 -118 RN/50 0.17 0.17 0.17 0.16 0.35

35 micro-X Package Dimensions

.085 2.15 4 EMITTER .083 DIA. 2.11

016

BASE

COLLECTOR 3 .020 .508

EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13

.057 .010 1.45 .25

.100 2.54

.022 .56

.455 .030 11.54 .75 .006 .002 .15 .05

www.semiconductor.agilent.com Data subject to change. Copyright 2001 Agilent Technologies, Inc. Obsoletes 5965-8925E October 31, 2001 5988-4733EN