PD - 91247D

IRF7406
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance l P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S
1 8 7

A D D D D

S
S G

VDSS = -30V RDS(on) = 0.045

Top View

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C V GS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range

Max.
-6.7 -5.8 -3.7 -23 2.5 0.02 20 -5.0 -55 to + 150

Units
A W W/C V V/ns C

Thermal Resistance Ratings

Parameter
RJA Maximum Junction-to-Ambient

Typ.

Max.
50

Units
C/W

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1
06/12/03

IRF7406
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -30 V VGS = 0V, ID = -250A -0.020 V/C Reference to 25C, ID = -1mA 0.045 VGS = -10V, I D = -2.8A 0.070 VGS = -4.5V, ID = -2.4A -1.0 V VDS = VGS, ID = -250A 3.1 S VDS = -15V, ID = -2.8A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 59 ID = -2.8A 5.7 nC VDS = -2.4V 21 VGS = -10V, See Fig. 6 and 12 16 VDD = -15V 33 ID = -2.8A ns 45 RG = 6.0 47 RD = 5.3, See Fig. 10 2.5 4.0 nH pF 1100 490 220
D

Between lead tip and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Qrr ton

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time

Min. Typ. Max. Units 42 64 -3.1 A -23 -1.0 63 96 V ns nC

Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.8A di/dt = 100A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%.

ISD -2.8A, di/dt 90A/s, VDD V(BR)DSS,

TJ 150C

Surface mounted on FR-4 board, t 10sec.

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IRF7406
1000
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP

1000

-ID , Drain-to-Source Current (A)

100

-I D , Drain-to-Source Current (A)

VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP

100

-4.5V
10

-4.5V
10

1 0.1 1

20s PULSE WIDTH TJ = 25C A

10 100

1 0.1

20s PULSE WIDTH TJ = 150C

1 10

100

-VDS , Drain-to-Source Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.0

R DS(on) , Drain-to-Source On Resistance (Normalized)

I D = -4.7A

-ID , Drain-to-Source Current (A)

1.5

T = 25C J
100

1.0

TJ = 150C

0.5

10 4 5 6 7

VDS = -15V 20s PULSE WIDTH

8 9 10

0.0 -60 -40 -20 0 20 40 60 80

VGS = -10V

100 120 140 160

-VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRF7406
2500

2000

-VGS , Gate-to-Source Voltage (V)

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd

20

I D = -2.8A VDS = -24V

16

C, Capacitance (pF)

1500

Ciss Coss

12

1000

500

Crss

0 1 10 100

0 0 20

FOR TEST CIRCUIT SEE FIGURE 12

40 60

-VDS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

100

-ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY RDS(on)

-ID , Drain Current (A) I

10

100us

TJ = 150C

TJ = 25C

10 1ms

0.1 0.3 0.6 0.9

VGS = 0V

1.2

1 0.1

TA = 25 C TJ = 150 C Single Pulse

1 10

10ms

100

-VSD , Source-to-Drain Voltage (V)

-VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF7406
6.0

V DS
5.0

RD

V GS RG

D.U.T.
+

-ID , Drain Current (A)

4.0

3.0

-10V
Pulse Width 1 s Duty Factor 0.1 %

2.0

Fig 10a. Switching Time Test Circuit

VDS 90%

1.0

0.0 25 50 75 100 125 150

TC , Case Temperature ( C)

Fig 9. Maximum Drain Current Vs. Ambient Temperature

10% VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

Thermal Response (Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100

10

0.1 0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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V DD

IRF7406
Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F .3F

QGS VG

QGD
VGS
-3mA

IG

ID

Charge

Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

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-10V

D.U.T.

VDS

IRF7406
Peak Diode Recovery dv/dt Test Circuit
D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS*

**
dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ -

V DD

Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.W. Period D= P.W. Period

[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS

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IRF7406
Package Outline
SO-8 Outline Dimensions are shown in millimeters (inches)

D -B-

DIM
5

INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157

MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99

A
6 5 H 0.25 (.010) M A M

8 E -A-

A1 B C D E

e 6X

K x 45 e1 A

e e1 H K L

.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8

0.10 (.004) L 8X 6 C 8X

-CB 8X 0.25 (.010) NOTES: A1 M C A S B S

RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 )

1.78 (.070) 8X

Part Marking Information

SO-8

EXAMPLE: T HIS IS AN IRF7101 (MOS FET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER

INT ERNAT IONAL RECTIFIER LOGO

YWW XXXX F7101

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IRF7406
Tape & Reel Information
SO-8 Dimensions are shown in millimeters (inches)
1.85 (.072) 4.10 (.161) 1.65 (.065) 3.90 (.154) 1.60 (.062) 1.50 (.059) 0.35 (.013) 0.25 (.010)

TERMINATION NUMBER 1

2.05 (.080) 1.95 (.077)

5.55 (.218) 5.45 (.215)

5.30 (.208) 5.10 (.201)

12.30 (.484) 11.70 (.461)

FEED DIRECTION

8.10 (.318) 7.90 (.311) 6.50 (.255) 6.30 (.248)

2.60 (.102) 1.50 (.059) 2.20 (.086) 2.00 (.079)

13.20 (.519) 12.80 (.504)

15.40 (.607) 11.90 (.469) 2

330.00 (13.000) MAX.

50.00 (1.969) MIN.

NOTES: 1 CONFORMS TO EIA-481-1 2 INCLUDES FLANGE DISTORTION @ OUTER EDGE 3 DIMENSIONS MEASURED @ HUB 4 CONTROLLING DIMENSION : METRIC

18.40 (.724) MAX 3 14.40 (.566) 12.40 (.448) 3

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/03

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