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Field Effect Transistor (FET)

Voltage-Controlled Device Two types: N-channel and P-channel The output current is dependent on the applied voltage.

Field Effect Transistors

EE 21 Fundamentals of Electronics

EE 21 Slides (AAMS) 1

JFET Schematic Symbols

Field Effect Transistor (FET)

Unipolar Device, unlike the BJT (why is it called unipolar?) Another question: why is it called field-effect transistor? Have very high input impedance (1-100M), but have considerably less gains compared to BJTs. Also referred to as Junction Field Effect Transistor (JFET)

JFET Construction

JFET Operation: The water analogy

Electron flow : Water flow (From source to drain) Gate control: similar to applied potential Source and drain : opposite ends of the channel

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JFET Operation, Case 1: VGS = 0, VDS = some (+) value

Application of potential draws e- towards drain, causing a drain current. e- flow is limited by the resistance of nchannel b/w drain and source (represented by the depletion region thickness). Question: Why isnt the d.r. thickness constant??
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Varying Resistances and IG = 0

Assuming uniform resistance for Nchannel, voltage divisions occur along the channel The PN junctions are all reverse biased, but by different voltage levels. NOTE: IG = 0 in JFETs. (WHY??)
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Pinch-off condition

A few more things about IDSS

IDSS is the maximum drain current possible for a JFET It is defined at VGS = 0 and VDS > |VP| The value of IDSS is usually specified in datasheets.
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This value is constant even if VGS is applied, though it will not be reached if VGS is present

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Case 2: Applied VGS < 0

When applying VGS, it is always < 0 for N-channel JFET! VGS is applied to establish D.Rs at a lower level of VDS. This is similar to how a BJTs IB can vary the levels of VCE & I C.

For increasing (-) VGS values

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Ohmic Region
The region to the left of the pinch-off locus is known as the ohmic region or the voltagecontrolled resistance region. ro is the resistance at VGS = 0, rd is the resistance at a voltage level VGS.

Summary of Operation
1. Maximum Drain Current = IDSS, occurs at VGS = 0 and VDS |VP|. 2. Maximum possible ID is reduced by application of VGS voltage, and ID = 0 for |VGS| > |VP| (VGS is more negative than VP).

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Summary of Operation
3. For |VP| |VGS| 0 V, 0 mA ID IDSS. Meaning, for varying levels of VGS, the drain current varies accordingly.

Summary of Operation
Recall that for a BJT, IC = IB; i.e. IC = f(IB) In the same manner, a JFETs ID and VGS are related as defined by SHOCKLEYS EQUATION:

Note that we used N-Channel JFETs in this discussion. For Pchannel JFETs, the biasing polarities , current directions, and thresholds will just be reversed! 15

This will help us construct the input characteristics of the JFET under bias.

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Shockley Curve
The curve of the input characteristics as defined by the Shockleys equation. For decent approximation, four points are chosen for the graphical solution. 1. VGS = 0 ID = IDSS 2. VGS = VP ID = 0 3. VGS = VP ID = IDSS 4. VGS = 0.3VP ID = IDSS/2
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Example: Shockley Curve

Sketch the transfer curve for an N-channel JFET defined by IDSS = 12mA and Vp = -6 Volts by using the graphical (four-point) method. Sketch the transfer curve for a P-channel JFET with IDSS = 4 mA and Vp = 3 V.

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