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Code No: 07A40403

SET-1

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD R07 II B.Tech. II Semester Regular Exams, April/May 2009

SEMICONDUCTOR DEVICES AND CIRCUITS (Mechatronics)


Time: 3 hours Max. Marks.80 Answer any Five questions All questions carry equal marks --Prove that an electron enters into a uniform magnetic field with constant velocity, takes a circular path. Calculate the time taken by an electron which has been accelerated through a potential difference of 100 Volts to traverse a distance of 2 cm. Given q=1.6x10-19 C and m=9.1x10-31 kg. [8+8] Write short notes on the following a. Donor impurities b. Acceptor impurities c. Fermi Dirac function d. Mass action law.

1. a) b)

2.

[4+4+4+4]

3. a) b) 4. a) b) 5.

Draw the basic block diagram of a DC power supply and explain each block. Explain how p-n junction diode acts as a rectifier. [8+8] Explain the construction and principle of operation Bipolar junction transistor Describe the current components in NPN and PNP transistors. [8+8] Derive the following with reference to the h-parameter model of BJT in CE configuration. a) Ai b) Ri c) Av d) Ro [4+4+4+4] Write short notes on the following with reference to the RC coupled amplifier: a) Band width b) Lower cutoff frequency c) Upper cutoff frequency d) Effect of shunt and bypass capacitances. [4+4+4+4] Describe Transconductance amplifier with neat diagram. In an amplifier has a gain of 60dB, a feedback of =0.005 is applied. What would be the change in overall gain of the feedback amplifier if the basic amplifier is subjected to a gain reduction of 12%. [6+10] Explain the principle behind negative resistance oscillator with an example. Draw the circuit of RC phase shift oscillator, what is condition for oscillations and also derive the frequency oscillations. [6+10] -----

6.

7. a) b)

8. a) b)

Code No: 07A40403

SET-2

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD R07 II B.Tech. II Semester Regular Exams, April/May 2009

SEMICONDUCTOR DEVICES AND CIRCUITS (Mechatronics)


Time: 3 hours Answer any Five questions All questions carry equal marks --Define the following terms a. Electron Ballistics. b. Force in an Electric field. c. Electric field intensity. d. Potential. Compare and contrast PN junction diode and Zener diode characteristics. Explain the operation of Zener diode as Regulator. Max. Marks.80

1.

[4+4+4+4] [8+8]

2. a) b)

3. a) Explain the principle, Construction, advantages and disadvantages of full wave rectifier. b) In a Full Wave Rectifier a signal of 300V at 50Hz is applied at the input. Each diode has internal resistance of 800 . If the load is 200 then calculate Idc, Vdc, Pdc and efficiency. [6+10] 4. a) Clearly explain the constructional features of MOSFET. b) Compare BJT, JFET and MOSFET characteristics. [8+8] 5. a) b) 6. a) b) 7. a) b) Draw the h parameter models for CB, CE and CC configurations. Give the relation between CE, CB and CC h parameters. Draw the small signal model of JFET and explain each parameter. Discuss on the frequency response of JFET-CS amplifier. [8+8] [8+8]

Describe Trans conductance amplifier with neat diagram. Two amplifiers each with a gain of 100 are connected in cascade, and negative feed back is applied to provide an overall gain of 20. Determine i) The Feed back factor ii) The Percentage increase in the overall gain if the gain of each amplifier increases by 100%. [6+10] Classify oscillators and explain. Draw the circuit of a Wein bridge oscillator and explain with necessary expressions for the frequency of oscillations. [6+10]

8. a) b)

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Code No: 07A40403

SET-3

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD R07 II B.Tech. II Semester Regular Exams, April/May 2009

SEMICONDUCTOR DEVICES AND CIRCUITS (Mechatronics)


Time: 3 hours Max. Marks.80 Answer any Five questions All questions carry equal marks --Compare and contrast Electrostatic Deflection and Magneto static Deflection. Define and explain in detail with necessary equations, the work done by the charged particle with charge q due to the applied electric field E. [8+8] Briefly explain the VI characteristics of a Zener diode. Discuss on the temperature dependency of VI characteristics of a PN junction diode. [8+8] Explain the basic principle, operation of the following with the help of neat diagrams. a. Half wave Rectifier. b. Full wave Rectifier - Centre tap type c. Full wave Rectifier - Bridge type. [4+6+6] Compare and contrast CB, CE and CC configurations. Write short notes on Ebers-moll model. Define and derive the stability factor S for the following: a. fixed bias circuit b. self bias circuit. Explain how biasing of JFET differs from biasing of BJT. Explain in detail self biasing of JFET, its operation and advantages. [8+8]

1 a) b) 2. a) b) 3.

4. a) b) 5.

[6+10] [8+8]

6. a) b) 7. a) b) 8. a) b)

Discuss on the need of feedback amplifier and give few advantages and disad vantages. Briefly explain current series feedback amplifier with neat sketches and necessary equations. [8+8] Compare Wein bridge and phase shift oscillators. A crystal has the following parameters L=0.33H, C1=0.065pF, C2=1.0pF and R=5.5K . Find the series resonant frequency and Q of the crystal. [6+10] -----

Code No: 07A40403

SET-4

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY, HYDERABAD R07 II B.Tech. II Semester Regular Exams, April/May 2009

SEMICONDUCTOR DEVICES AND CIRCUITS (Mechatronics)


Time: 3 hours Answer any Five questions All questions carry equal marks --ID Prove that the deflection sensitivity S = . 2dVa Discuss on the magneto static deflection. Write short notes on the following: a. Alloy Junction (or) Step graded Junction. b. Linearly graded junction. c. Zener breakdown. d. Avalanche break down. Derive the following with reference to the Half wave rectifier. a) Idc b) Vdc c) Irms d) e) r f) PIV g) %regulation h) TUF [2x8=16] Explain the following with neat sketches and necessary equations a. Common Base Configuration. b. Common Emitter Configuration. c. Common Collector Configuration. Explain the following with reference to BJT a. Fixed bias b. Self bias c. Bias compensation techniques. Max. Marks.80

1. a) b) 2.

[8+8]

[4+4+4+4]

3.

4.

[5+6+5]

5.

[5+5+6]

6. a) Discuss on the frequency response characteristics JFET-CS amplifier. b) Calculate the voltage gain Av= Vo/Vi at 1 KHz for the circuit shown. The FET parameters are gm = 2m A/V and rd=10K . [6+10]

7. a) b) 8. a) b)

Discuss on the general structure of the Feedback circuit. Determine Ri and Ro of current shunt Feedback amplifier. State and explain Barkhausan criterian. For a wein bridge oscillator prove that 1 f = 2 R1 R2C1C2 --------

[8+8]

[6+10]