Bulletin I2402 rev.

A 07/00

25RIA SERIES
MEDIUM POWER THYRISTORS Stud Version

Features
Improved glass passivation for high reliability and exceptional stability at high temperature High di/dt and dv/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600V V DRM / V RRM

25A

Typical Applications
Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high-reliability requirements

Major Ratings and Characteristics

Parameters
IT(AV) @ TC IT(RMS) ITSM
2

10 to 120
25 85 40

25RIA 140 to 160

25 85 40 398 415 795 725 1400 to 1600 110

Units
A C A A A A2 s A2 s V s C

@ 50Hz @ 60Hz

420 440 867 790 100 to 1200

I t

@ 50Hz @ 60Hz

VDRM/VRRM tq TJ typical

- 65 to 125

Case Style TO-208AA (TO-48)

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00

ELECTRICAL SPECIFICATIONS Voltage Ratings

Voltage Type number Code
10 20 40 60 25RIA 80 100 120 140 160

V DRM /V RRM , max. repetitive peak and off-state voltage (1) V

100 200 400 600 800 1000 1200 1400 1600

VRSM , maximum nonrepetitive peak voltage (2) V

150 300 500 700 900 1100 1300 1500 1700

I DRM /I RRM max.

@ TJ = TJ max.

mA
20

10

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/s (2) For voltage pulses with tp 5ms

On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current

25RIA 10 to 120
25 85 40 420 440 350 370

140 to 160
25 85 40 398 415 335 350 795 725 560 510 7950 0.99 1.15 11.73 10.05 --1.80

Units
A C A A

Conditions
180 sinusoidal conduction

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.

I2t

Maximum I2t for fusing

867 790 615 560

A2s

t = 10ms t = 8.3ms t = 10ms t = 8.3ms

I2t

Maximum I2t for fusing voltage

8670 0.99 1.40 10.1 5.7 1.70 ---

A2s V

t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)),TJ = TJ max.

VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage

(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)),TJ = TJ max.

Ipk= 79 A, TJ = 25C TJ = 25C. Anode supply 6V, resistive load,

IH IL

Maximum holding current Latching current

130 200

mA

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00

Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM 600V VDRM 800V VDRM 1000V VDRM 1600V tgt trr tq Typical turn-on time Typical reverse recovery time 200 180 160 150 0.9 4 s TJ = 25C, at = rated VDRM/VRRM, TJ = 125C TJ = TJ max., ITM = IT(AV), tp > 200s, di/dt = -10A/s Typical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200s, VR = 100V, di/dt = -10A/s, dv/dt = 20V/s linear to 67% VDRM, gate bias 0V-100W (*) tq = 10sup to 600V, tq = 30s up to 1600V available on special request. A/s

25RIA

Units

Conditions
TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15, tp = 6s, tr = 0.1s max. ITM = (2x rated di/dt) A

Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage

25RIA
100 300 (*)

Units
V/s

Conditions
TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM

(**) Available with: dv/dt = 1000V/s, to complete code add S90 i.e. 25RIA160S90.

Triggering
Parameter
PGM IGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak negative gate voltage DC gate current required to trigger 90 60 35 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.0 2.0 1.0 2.0 0.2 V V mA V mA TJ = - 65C TJ = 25C TJ = 125C TJ = - 65C TJ = 25C TJ = 125C TJ = TJ max., VDRM = rated value TJ = TJ max. VDRM = rated value Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-tocathode applied

25RIA
8.0 2.0 1.5 10

Units Conditions
W A V TJ = TJ max. TJ = TJ max. TJ = TJ max.

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00

Thermal and Mechanical Specification

Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range

25RIA
- 65 to 125 - 65 to 125 0.75

Units
C C K/W

Conditions

R thJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque to nut

DC operation

0.35

K/W

Mounting surface, smooth, flat and greased

to device 25 0.29 2.8 lbf-in kgf.m Nm g (oz) See Outline Table Lubricated threads (Non-lubricated threads)

20(27.5) 0.23(0.32) 2.3(3.1) wt Approximate weight Case style

14 (0.49)

TO-208AA (TO-48)

RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

Conduction angle
180 120 90 60 30

Sinusoidal conduction Rectangular conduction Units

0.17 0.21 0.27 0.40 0.69 0.13 0.22 0.30 0.42 0.70 K/W

Conditions
TJ = TJ max.

Ordering Information Table

Device Code

25
1

RIA 160
2 3

M
4

S90
5

1 2 3 4

Current code Essential part number Voltage code: Code x 10 = VRRM (See Voltage Rating Table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 X 1

Critical dv/dt: None = 300V/s (Standard value) S90 = 1000V/s (Special selection)

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00

Outline Table

Case Style TO-208AA (TO-48)

All dimensions in millimeters (inches)

Maximum Allowable Case Temperature (C)

Maximum Allowable Case Temperature (C)

130

25RIA Series (100 to 1200V) RthJC (DC) = 0.75 K/W

130

25RIA Series (100 to 1200V) R thJC (DC) = 0.75 K/W

120

120

110

Conduction Angle

110

Conduction Period

100

30

60

100

30

90

60 90 120 180 DC

120 180

90

90

80

10

15

20

25

30

80

10

20

30

40

Average On-state Current (A)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

Fig. 2 - Current Ratings Characteristic

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00
Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10 15
Conduction Angle

180 120 90 60 30 RMS Limit

SA R th

K/ W

=1 W K/

3K /W

aR elt -D

4K /W 5K /W

7K /W

25RIA Series (100 to 1200V) TJ = 125C 20 25 0 30 25 50 75 100 125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 3 - On-state Power Loss Characteristics

Maximum Average On-state Power Loss (W) 60 55 50 45 40 35 30 25 RMS Limit 20 15 10 5 0 0 5 10 15 20
Conduction Period

DC 180 120 90 60 30

2K /W
3K /W 4K /W 5K /W

R
SA th

= 1 W K/ ta el -D R

25RIA Series (100 to 1200V) TJ = 125C 25 30 35

7 K/W

0 40

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 4 - On-state Power Loss Characteristics

375 Peak Half Sine Wave On-state Current (A) 350 325 300 275 250 225 200 175 1 25RIA Series (100 to 1200V) 10 100

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

450 425 400 375 350 325 300 275 250 225 200 175

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage Reapplied RatedRRM Reapplied V

25RIA Series (100 to 1200V) 0.1 Pulse Train Duration (s) 1

150 0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00
1000 Instantaneous On-state Current (A) 25RIA Series (100 to 1200V) 100

10 T = 25C J T = 125C J 1 0.5

1.5

2.5

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W 120 130 120 110
Conduction Period

25RIA Series (1400 to 1600V) R thJC (DC) = 0.75 K/W

110

Conduction Angle

100 90 80 30 70 0 5 90 60 120 180

100

30

60

90

90

120

180

DC

80

10

15

20

25

30

10 15 20 25 30 35 40 45 Average On-state Current (A)

Average On-state Current (A)

Fig. 8 - Current Ratings Characteristics

Maximum Average On-state Power Loss (W) 45 40 35 30 25 20 15 10 5 0 0 5 10 15
Conduction Angle

Fig. 9 - Current Ratings Characteristics

180 120 90 60 30 RMS Limit

SA R th

/W 1K

5 1. W K/
2

K/ W 3K /W 3.5 K/ W 4.5 K/W 6 K/ W

7.5 K /W

2.5

W K/

K/W .5 =0 aR elt -D

25RIA Series (1400 to 1600V) TJ = 125C 20 25

0 30

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 10 - On-state Power Loss Characteristics

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00
Maximum Average On-state Power Loss (W) 60 50 40 DC 180 120 90 60 30

Rt

1 W K/

A hS

30 RMS Limit 20 10 0
Conduction Period

25RIA Series (1400 to 1600V) TJ = 125C 0 5 10 15 20 25 30 35

K/ W 2K /W 2.5 K/W 3K /W 4K /W 5.5 K/W 7.5 K /W

1. 5

.5 =0 W K/ aR elt -D

40 0

25

50

75

100

125

Average On-state Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 11 - On-state Power Loss Characteristics

375 Peak Half Sine Wave On-state Current (A) 350 325 300 275 250 225 200 175 150 1 25RIA Series (1400 to 1600V) 10 100

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

400 375 350 325 300 275 250 225 200 175

Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125C No Voltage Reapplied Rated VRRM Reapplied

25RIA Series (1400 to 1600V) 0.1 Pulse Train Duration (s) 1

150 0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 12 - Maximum Non-Repetitive Surge Current

1000 Instantaneous O n-state Current (A)

Fig. 13 - Maximum Non-Repetitive Surge Current

100

TJ= 25C 10 TJ = 125C

25RIA Series (1400 to 1600V) 1 0 1 2 3 4 5 6

Instantaneous On-state Voltage (V)

Fig. 14 - Forward Voltage Drop Characteristics

www.irf.com

25RIA Series
Bulletin I2402 rev. A 07/00
Transient Thermal Impedance Z thJC (K/W ) 1 Steady State Value R thJC = 0.75 K/W (DC Operation)

0.1

25RIA Series

0.01 0.001

0.01

0.1 Square Wave Pulse Duration (s)

10

Fig. 15 - Thermal Impedance Z thJC Characteristics

100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 s, tp >= 6 s b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 s, tp >= 6 s (b)
Tj = -65 C Tj = 25 C

(1) PGM = 16W , (2) PGM = 30W , (3) PGM = 60W , (4) PGM = 60W , (a)

tp = 4ms tp = 2ms tp = 1ms tp = 1ms

Tj = 125 C

1 VGD IGD 0.01

(1)

(2) (3)

(4)

0.1 0.001

25RIA Series Frequency Limited by PG(AV) 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 16 - Gate Characteristics

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.

www.irf.com