Assignment(1) and (2) combined Assignment (1) simulation assignment Assignment (2) BJT Home Assignment Simulation Assignment

(1)
Part 1 Clipper Circuits:

The transfer characteristics for v=3 v=-3 and v=0 are plotted below.
(1) V=3v Transfer Characteristics

As we can see that until vin <=3 volts the out put is constant vout = 3v as vin >3v the diode gets reversed biased and the output follows the input. (2) V=0v Transfer characteristic

In this case until vin <=0 output is o there after the output voltage follows the input voltage since the diode gets reversed biased. (3) V= -3v Transfer characteristic

In this case until the vin <= -3v the diode will be forwarded biased and output will be vout = -3v after this as vin > -3v the diode gets forward biased and the output will follow the input .

Part 1 (a):

The desired transfer characteristic can be achieved by this circuit, the characteristic is plotted below.

Part 1(b):

The Desired Transfer characteristic can be achieved by the circuit shown above. The transfer characteristic is plotted below.

Part 2: Clamper (a)

The output waveform for Vr= 3v is shown below

The output wave form for Vr = 0v is shown below.

The output waveform for Vr= -3v is shown below.

Description: The Capacitor in this case will be charger up to 10-Vr volts and the output voltage will be given by the equation Vout =Vin- 10- Vr

(b) Now the diode polarity Is reversed.

The output waveform for Vr= 3v is

The output waveform for Vr= 0v is

The output waveform for Vr= -3v is

Description: Since the diode polarity is reversed The Capacitor in this case will be charger up to 10+Vr volts and the output voltage will be given by the equation Vout =Vin- 10+ Vr

Assignment (2) BJT Home Assignment

Q1. According to the Eber-molls model the values of emitter collector and base current can be given as iE = (IS/F)[exp(VBE/VT)-1] - IS [exp(VBC/VT)-1] -------------------------------(1) iC = IS[exp(VBE/VT)-1] (IS/R) [exp(VBC/VT)-1] -------------------------------(2) iB = (IS/F)[exp(VBE/VT)-1] (IS/ R) [exp(VBC/VT)-1] -------------------------------(3) as we know for VBE > 0 and VCB >0 as long as VCB > -0.4 v BJT will operate in active region , when VCB < -0.4 v the CB Junction Begins to conduct and the BJT will be in saturation mode . given as F = 0.99 R = 0.5 IS = 10-14 A As we know that for forward bias mode VBE > 0.5 v and VCB > - 0.4 v

vBE
0.5 v 0.6 v 0.7 v 0.7 v 0.7 v 0.7 v 0.7 v 0.7 v 0.7 v

vBC
-2 v -2 v -2 v -1 v 0v 0.5 v 0.6 v

Mode of operation Active Active Active Active Active

iE 2.3A

iC 2.25 A

iB 0.05 A 0.01 mA 0.05 mA 0.05 mA 0.05 mA

1.06 mA 1.05 mA 4.98 mA 4.93 mA 4.98 mA 4.93 mA 4.98 mA 4.93 mA

Saturation 4.59 mA 4.156 mA 0.434 mA Saturation 4.26 mA 3.94 mA 0.77 mA

0.65 v Saturation 4.15 mA 3.276 mA 0.827 mA 0.67 v Saturation 3.43 mA 1.83 mA 1.6mA

Q2.

For the given circuit applying KVL in base emitter junction. Vin = iBRB + VBE iBRB = Vin 0.7 we know that iC = .iB iC (RB/) = Vin 0.7 VCC - VC = iC . RC VC = VCC - iC. RC Since Vout = VC Vout = Vcc .(RC / RB)(Vin 0.7) As given RC = 10 K and RB = 40 K Vout = 17 10 . Vin -------------------------------------------(1) For a Emitter Base Junction to be forward biased the input voltage must exceed the knee voltage of EB junction i.e. 0.7 volts . If Vin 0.7 the emitter base junction will be in reversed biased and the transistor will be in cut off mode and iB = 0 iC = 0 and the output voltage will be given by Vout = VCC = 10 v. We know that until the collector base junction is reversed biased i.e. the voltage VCB > - 0.5 v

VC = -5 + VB As we know that VBE = 0.7 From the given circuit it is clear that VB = 0.7 v VC = -5 + 0.7 VC = 0.2 v The corresponding input voltage for this output value will be given as From equation (1) 0.2 = 17 10 . Vin => Vin = 1.68 v This is the value of input voltage after which if the input is increased further the transistor will be in saturation region and in this condition the out put voltage will be given as. Vout = 0.2 v The input and output voltage transfer characteristic is plotted below.

Q3

Applying KVL in outer loop VCC = iE . RC + iB . RB + VBE + iE RE VCC VBE = iE [RC + (RB/+1) + RE] Putting the given values 12 0.7 = iE [2K + (50K/51) + 1K] iE = 2.84 mA VE = iE . RE VE = 2.84 v Since VB = 0.7 + VE VB = 3.54 v --------------------------------(1) iB = iE/(+1) iB = 0.055mA VCB = iB . RB VCB = 2.78 v VC = 6.324 v --------------------------------(2) Since VC > VB The circuit is in forward biased mode and to verify this we can find iE as, VCC VC = iE . RC Using this equation we can verify our result iE = 2.84v This is same as evaluated earlier

and the collector current can be found as, iC = iE - iB iC = 2.78 mA and the VCE voltage can be evaluated as, VCE = VC - VE VCE = 6.32 2.84 VCE = 3.84 v --------------------------------(3) Q4.

The thevenins equivalent circuit is given below Where RTH = 24 K and VTH = 4.8 v

Applying KVL in Emitter Base Junction VTH = iB . 24K + 0.7 + iE . 1K Since iB = iE / (+1) 4.1 = iE [(24K/51) + 1K ] iE = 2.79 mA ----------------------------------------(1) now we can find out VE VE = 2.79 v ---------------------------------------------- (2) Similarly VB can be evaluated as VB = 3.49 v ---------------------------------------------- (3) The base current can be evaluated as iB = (VTH - VB)/24K iB = 0.055 mA ------------------------------------------ (4) the collector current can be evaluated using the transistor current law iC = iE - iB iC = 2.74 mA using this we can evaluate the VC V CC - VC = 2.74 mA x 2K ----------------------------- (5) 12 - VC = 5.48 VC = 6.52 v ------------------------------------------(6) VC > VB The transistor is in active mode Now if the RC is changer now the new value of RC is 10K Now from eq. (5) VC = VCC iC . RC VC = 12 - 2.74 mA x 10 K VC = -15.4 Now it is clear that VC < < VB Now the transistor is in saturation mode in this condition VCEsat = 0.2 And iCsat = (VCC VC)/ RC Since in saturation VBC = 0.5 v iC = (12 VB + 05)/10K -----------------------------------(7) Similarly iB = (4.8 - VB)/24K ------------------------------------------(8)

and iE = VE/1K ------------------------------------------(9) from the transistor current equation iE = iC + iB VE/1K = (12.5 - VB) /10K + (4.8 - VB)/24K VE = 1.45 0.142 . VB Since VBE = 0.7 VE = 1.183 v ---------------------------------------------(10) VB = 1.882 v ---------------------------------------------(11) Now VC = VB 0.5 VC = 1.382 v ---------------------------------------------(12) Now we can find out iCsat = (12 - VC)/10K iCsat = 1.06 mA ------------------------------------------(13) Similarly iE = VE / 1K iE = 1.183 ma ----------------------------------------------(14) Similarly iB = (4.8 - VB)/24K iB = 0122 mA ----------------------------------------------(15) the values of iC iB and iE we found can easily be shown that they satisfies the transistor current equation. Q5.

The BJT is biased in voltage divider bias, for analysis of this circuit we need to convert it in to a simpler form using thevenins theorem. The equivalent circuit is

Applying KVL in Emitter Base Loop VBB = iB . RB + 0.7 + iE . RE 2 - 0.7 = iE/ 101 . 20K + iE . 100 iE = 4.37 mA --------------------------------(1) we can find VE as VE = iE . RE VE = 0.437 v ---------------------------------(2) And VB will be VB = 1.137 v -------------------------------------- (3) And iB can be evaluated as iB = iE/ (+1) iB = 0.0432 mA -------------------------------(4) Similarly iC can be given as iC = . iB iC = 4.32 mA ----------------------------------(5) now using the value of iC we can find the value of VC VCC VC = iC . RC VC = 1.68 v -----------------------------------(6)

It is cleared from the value of VB and VC that VC > VB and we can now say that the BJT is in active mode Now the value VCE can be evaluated as VCE = VC - VE VCE = 1.68 0.437 VCE = 1.243 v