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Preliminary Technical Information

Plasma Display IXGQ90N33TCD4 VCES = 330V


Power IGBT ICP = 360A
Trench Gate High Speed
VCE(sat) ≤ 1.80V

Symbol Test Conditions Maximum Ratings TO-3P (IXGQ)


VCES TJ = 25°C to 150°C 330 V

VGEM ±30 V

IC25 TC = 25°C, IGBT chip capability 90 A


ICP TJ ≤ 150°C, tp ≤ 1μs 360 A G
C
IDP TJ ≤ 150°C, tp ≤ 1μs 45 A E (TAB)
IC(RMS) Lead current limit 75 A
G = Gate C = Collector
Pd TC = 25°C 200 W
E = Emitter TAB = Collector
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL 1.6mm (0.062 in.) from case for 10s 300 °C Features
TSOLD Plastic body for 10 seconds 260 °C • International standard package
Md Mounting torque 1.13/10 Nm/lb.in. • Low VCE(sat)
- for minimum on-state conduction
Weight 5.5 g
losses
• Fast switching

Applications
• PDP Screen Drivers
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVCES IC = 250μA , VGE = 0V 330 V


VGE(th) IC = 250μA , VCE = VGE 3.0 5.0 V

ICES VCE = 330V 1 μA


VGE = 0V TJ = 125°C 200 μA

IGES VCE = 0V, VGE = ± 20V ±200 nA

VCE(sat) VGE = 15V, IC = 20A, Note 1 1.40 V


IC = 45A 1.54 1.80 V
TJ = 125°C 1.54 V
IC = 90A 1.82 V
TJ = 125°C 1.95 V

© 2007 IXYS CORPORATION, All rights reserved DS99842A(8/07)


IXGQ90N33TCD4
Symbol Test Conditions Characteristic Values TO-3P (IXGQ) Outline
(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs IC = 45A, VCE = 10V 40 65 S

Cies 2320 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 180 pF
Cres 21 pF

Qg(on) 69 nC
Qge IC = 45A, VGE = 15V, VCE = 0.5 • VCES 15 nC
Qgc 13 nC

td(on) 13 ns
tri Resistive load, TJ = 25°°C 30 ns
td(off) IC = 45A, VGE = 15V 38 ns
tfi VCE = 240V, RG = 5Ω 49 ns

td(on) 13 ns
Resistive load, TJ = 125°°C
tri 28 ns
IC = 45A, VGE = 15V
td(off) 50 ns
VCE = 240V, RG = 5Ω
tfi 74 ns

RthJC 0.62 °C/W


RthCS 0.21 °C/W

Protection Diode

Symbol Test Conditions Characteristic Values


(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VF IF = 15A, VGE = 0V 1.6 V

RthJC 2.5 °C/W

Note 1: Pulse test, t ≤ 300μs; duty cycle, ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION


The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
IXGQ90N33TCD4
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
90 300
VGE = 15V
80 13V 270
VGE = 15V
11V
9V 240 13V
70
11V
210
60

IC - Amperes
IC - Amperes

180
50 9V
7V 150
40
120
30
90
20 60 7V

10 30

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1 2 3 4 5 6 7 8 9 10
VCE - Volts VCE - Volts

Fig. 3. Output Characteristics Fig. 4. Dependence of VCE(sat) on


@ 125ºC Junction Temperature
90 1.4
VGE = 15V
V GE = 15V
80 13V
11V 1.3 I C = 90A
70 9V
VCE(sat) - Normalized

1.2
60
IC - Amperes

50 1.1

7V I C = 45A
40 1

30
0.9
20
I C = 23A
0.8
10 5V

0 0.7
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage


vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
3.2 140

3.0 TJ = 25ºC
120
2.8

2.6 100
IC - Amperes

I C = 90A
TJ = 125ºC
VCE - Volts

2.4 45A 80 25ºC


23A - 40ºC
2.2
60
2.0

1.8 40

1.6
20
1.4

1.2 0
5 6 7 8 9 10 11 12 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5
VGE - Volts VGE - Volts

© 2007 IXYS CORPORATION, All rights reserved


IXGQ90N33TCD4

Fig. 7. Transconductance Fig. 8. Gate Charge


90 16
TJ = - 40ºC
80 VCE = 165V
14
I C = 45A
70 25ºC
12 I G = 10 mA
g f s - Siemens

60
10

VGE - Volts
50
125ºC
8
40
6
30

4
20

10 2

0 0
0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70
I C - Amperes QG - NanoCoulombs

Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance


100 10,000
f = 1 MHz
90
Cies
80
Capacitance - PicoFarads

70
1,000
IC - Amperes

60

50 C oes
40
100
30
TJ = 150ºC
20
RG = 20Ω Cres
10 dV / dT < 10V / ns

0 10
50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40
VCE - Volts VCE - Volts

Fig. 12. Maximum Transient Thermal


Fig. 11. Forward-Bias Safe Operating Area Impedance
1000 1.00

VCE(sat) Limit

100
Z(th)JC - ºC / W
IC - Amperes

1µs

0.10
10µs

10
100µs
TJ = 150ºC
1ms
TC = 25ºC
Single Pulse

1 0.01
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

IXYS reserves the right to changeVlimits,


CE - Volts
test conditions, and dimensions. Pulse Width - Seconds
IXGQ90N33TCD4
Fig. 13. Resistive Turn-on Rise Time Fig. 14. Resistive Turn-on Rise Time
vs. Junction Temperature vs. Collector Current
34 35
RG = 5Ω 34 RG = 5Ω
33
VGE = 15V 33 VGE = 15V
32 VCE = 240V VCE = 240V
32
t r - Nanoseconds

t r - Nanoseconds
TJ = 25ºC
31 31
30
30
I C = 90A
29
29
28
28 27
26 TJ = 125ºC
27
I C = 45A 25
26
24
25 23
25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90

TJ - Degrees Centigrade IC - Amperes

Fig. 15. Resistive Turn-on Switching Times Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance vs. Junction Temperature
75 24 95 60
70 tr td(on) - - - - 23 90 tf td(off) - - - - 57
65 TJ = 125ºC, VGE = 15V 22 RG = 5Ω, VGE = 15V
85 54
VCE = 240V VCE = 240V

t
t

60 21

d(off)
d(on)

80 51
t r - Nanoseconds

t f - Nanoseconds

55 20
50 19 75 48
- Nanoseconds

- Nanoseconds
I C = 90A, 45A
45 18 70 45
I C = 90A, 45A
40 17 65 42
35 16
60 39
30 15
55 36
25 14
20 13 50 33

15 12 45 30
4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times Fig. 18. Resistive Turn-off Switching Times
vs. Collector Current vs. Gate Resistance
120 60 120 130
tf td(off) - - - - tf td(off) - - - -
110 57 115 120
RG = 5Ω, VGE = 15V TJ = 125ºC, VGE = 15V
100 54 110 VCE = 240V 110
TJ = 125ºC VCE = 240V
t

t
d(off)

d(off)

90 51 105 100
t f - Nanoseconds

t f - Nanoseconds

I C = 45A
80 48 100 90
- Nanoseconds

- Nanoseconds

70 45 95 80

60 42 90 I C = 90A 70

50 39 85 60
TJ = 25ºC
40 36 80 50

30 33 75 40

20 30 70 30
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 4 6 8 10 12 14 16 18 20
IC - Amperes RG - Ohms

© 2007 IXYS CORPORATION, All rights reserved IXYS REF:G_90N33TC(4G)5-30-07-C