Basic Electronics (9034) Experiment No.

Experiment No. 5

1.0 TITLE:
To draw and study characteristics of Uni Junction transistor (UJT).

2.0 PRIOR CONCEPTS:

• Transistor
• Diode
• Resistor

3.0 NEW CONCEPTS:

Proposition 1: Uni-Junction transistor (UJT)
An Uni-Junction transistor (UJT) is a semiconductor device having only one p-n junction and three
terminals. These three terminals are named as Base1, Base2, and Emitter.
Concept Structure 1:

Proposition 2: UJT characteristics

The graph of emitter to base1 voltage versus emitter current is called UJT characteristics. The
characteristics can be divided in three regions, cut-off region, negative resistance region and
saturation region. The most important region is negative resistance region. Negative resistance
region is the part of the characteristics where as current increases voltage decreases.

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Experiment No. 5 Basic Electronics (9034)

Concept Structure 2:

4.0 LEARNING OBJECTIVES:

Intellectual Skills
• To identify the component and equipment required.
• To understand the behavior of UJT by observing the variation in emitter current with respect
to emitter base voltage.
• To identify the different regions of operation of UJT from its characteristics and label them.
Motor Skills
• Ability to draw necessary circuit diagram.
• Ability to list the component and equipment required.
• Ability to make the connections as per circuit diagram.
• Ability to note down the readings.
• Ability to plot the necessary graph.

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Basic Electronics (9034) Experiment No. 5

5.0 APPARATUS:
• Experimental kit, Ammeter (0-30mA), Voltmeter (0-10V)

6.0 CIRCUIT DIAGRAM:

7.0 STEPWISE PROCEDURE:

– Make connections as per circuit diagram.
– Switch on the circuit.
– Observe peak voltage.
– Increase the supply voltage step by step so that current increases.
– Note down respective voltages.
– Note down valley point voltage.
– Take two or three readings in saturation region.
– Take two or three readings in the negative resistance region.

8.0 OBSERVATIONS:
Observation table for UJT Characteristics

Peak point voltage = volts, Valley point voltage = volts

9.0 GRAPH: PLOT THE GRAPH OF VBE1 VERSUS IE

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Experiment No. 5 Basic Electronics (9034)

10.0 CONCLUSIONS :
In the negative resistance region of V-I characteristics of UJT the emitter current……………………
…..…………...(increases/decreases) as emitter to base1 voltage ………………...……
………………… (Increases/ decreases).

11.0 QUESTIONS:
Write answers to Q…….Q.....Q….…Q…..... and Q...…..
(The question numbers to be allotted by teacher)
1. Why name of the device is UJT?
2. Can the intrinsic stand off ratio of UJT be changed? If yes, how?
3. Can UJT replace BJT? Justify!
4. What will happen if a.c. voltage is applied between emitter and base1 of UJT?
5. What is the importance of negative resistance region of UJT?
6. What will happen if intrinsic stand off ratio of UJT is doubled?
7. Enlist two applications of UJT.
8. Is it possible to use UJT to trigger SCR? If yes, draw the necessary circuit diagram.
9. From the characteristics obtained calculate the slope of negative resistance part of
characteristics. What does it signify?

(Space for answers)

Signature of Teacher

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Basic Electronics (9034) Experiment No. 5

GRAPH

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Experiment No. 5 Basic Electronics (9034)

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