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BC337, BC337−25,

BC337−40

Amplifier Transistors
NPN Silicon

Features http://onsemi.com

• Pb−Free Packages are Available*


COLLECTOR
1

2
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 45 Vdc 3
Collector − Base Voltage VCBO 50 Vdc EMITTER

Emitter − Base Voltage VEBO 5.0 Vdc


Collector Current − Continuous IC 800 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation @ TC = 25°C PD 1.5 W CASE 29
Derate above 25°C 12 mW/°C STYLE 17

Operating and Storage Junction TJ, Tstg −55 to +150 °C


Temperature Range 12 1
2
3 3
THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD
BULK PACK TAPE & REEL
Characteristic Symbol Max Unit
AMMO PACK
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

BC33
7−xx
AYWW G
G

BC337−xx = Device Code


(Refer to page 4)
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy and soldering details, please ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package
Reference Manual, SOLDERRM/D. dimensions section on page 4 of this data sheet.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:


March, 2007 − Rev. 6 BC337/D
BC337, BC337−25, BC337−40

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)


Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO 45 − − Vdc
(IC = 10 mA, IB = 0)

Collector −Emitter Breakdown Voltage V(BR)CES 50 − − Vdc


(IC = 100 mA, IE = 0)
Emitter −Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 10 mA, IC = 0)
Collector Cutoff Current ICBO − − 100 nAdc
(VCB = 30 V, IE = 0)

Collector Cutoff Current ICES − − 100 nAdc


(VCE = 45 V, VBE = 0)

Emitter Cutoff Current IEBO − − 100 nAdc


(VEB = 4.0 V, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 100 mA, VCE = 1.0 V) BC337 100 − 630
BC337−25 160 − 400
BC337−40 250 − 630
(IC = 300 mA, VCE = 1.0 V)
60 − −
Base−Emitter On Voltage VBE(on) − − 1.2 Vdc
(IC = 300 mA, VCE = 1.0 V)

Collector −Emitter Saturation Voltage VCE(sat) − − 0.7 Vdc


(IC = 500 mA, IB = 50 mA)

SMALL−SIGNAL CHARACTERISTICS
Output Capacitance Cob − 15 − pF
(VCB = 10 V, IE = 0, f = 1.0 MHz)

Current −Gain − Bandwidth Product fT − 210 − MHz


(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

1.0
r(t), NORMALIZED EFFECTIVE TRANSIENT

0.7 D = 0.5
0.5
0.3
THERMAL RESISTANCE

0.2
0.2 0.1
qJC(t) = (t) qJC
0.1 0.05 qJC = 100°C/W MAX
P(pk) qJA(t) = r(t) qJA
0.07 0.02
SINGLE PULSE qJA = 375°C/W MAX
0.05 t1 D CURVES APPLY FOR
0.01 POWER
0.03 SINGLE PULSE t2
PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.01
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
t, TIME (SECONDS)
Figure 1. Thermal Response

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2
BC337, BC337−25, BC337−40

1000 1000
1.0 s 1.0 ms TJ = 135°C
VCE = 1 V
IC, COLLECTOR CURRENT (mA)

100 ms TJ = 25°C

hFE, DC CURRENT GAIN


dc
TC = 25°C

dc
100 TA = 25°C 100

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
10 10
1.0 3.0 10 30 100 0.1 1.0 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE IC, COLLECTOR CURRENT (MA)

Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain


VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0 1.0
TJ = 25°C TA = 25°C
VBE(sat) @ IC/IB = 10
0.8 0.8
VBE(on) @ VCE = 1 V
V, VOLTAGE (VOLTS)
0.6 0.6

IC = 10 mA 100 mA 300 mA 500 mA


0.4 0.4

0.2 0.2
VCE(sat) @ IC/IB = 10
0 0
0.01 0.1 1 10 100 1 10 100 1000
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 4. Saturation Region Figure 5. “On” Voltages

100
θV, TEMPERATURE COEFFICIENTS (mV/°C)

+1

qVC for VCE(sat)


C, CAPACITANCE (pF)

0
Cib
10
−1

Cob
−2 qVB for VBE

1
1 10 100 1000 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Temperature Coefficients Figure 7. Capacitances

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3
BC337, BC337−25, BC337−40

ORDERING INFORMATION
Device Marking Package Shipping†
BC337 7 TO−92 5000 Units / Bulk
BC337G 7 TO−92 5000 Units / Bulk
(Pb−Free)

BC337RL1G 7 TO−92 2000 / Tape & Reel


(Pb−Free)

BC337−25G 7−25 TO−92 5000 Units / Bulk


(Pb−Free)

BC337−25RL1 7−25 TO−92 2000 / Tape & Reel


BC337−25RL1G 7−25 TO−92 2000 / Tape & Reel
(Pb−Free)

BC337−25ZL1G 7−25 TO−92 2000 / Ammo Box


(Pb−Free)

BC337−40G 7−40 TO−92 5000 Units / Bulk


(Pb−Free)

BC337−40RL1G 7−40 TO−92 2000 / Tape & Reel


(Pb−Free)

BC337−40ZL1G 7−40 TO−92 2000 / Ammo Box


(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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4
BC337, BC337−25, BC337−40

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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