Testing Solid-State Devices
Precautions
Qhewmsters - Ontour be remmrrnerad that tha 0h
Fmornal voltage source. Also, nome instruments are capable Of
Galivering high currents.
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on Th ewe ‘Testing Bipolar Transistors:
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- 488‘rough but useful check ofthe contin of thejretions may,
fa‘me with an obmmetor. Prt, te forward reitancy of each
JR's measured a ahown Fig. C19 this figure, the con
[elit tore PNP teraistor are shown. The negate terminal,
OF the obmmete e comacted tothe base. The forward
Sedslance of bom jnctong te cheskea by touching the emiter
he thor the ealactor ternal in turn withthe postive ead A
gh reading incieetes an open juretion. A normal unit should
‘BB's oosiny below 800 ohms. Otmerve the procactions given
‘Sarr fer using the ohmmater The forward resistance of
functors of am NPN urit fs chackad withthe same setup shown
ig C,Dut withthe lade to the ohmmcte rvorod.
“To check for shorts or excessive lnakago, revere the obmmate
oorectons and swites to.a higher resistance scale, 28 shown in
Fig. Now the ofmmretr places a reverse Dies on each ne
nd estage curant registred onthe mete. A
low resstarce mading indicates a shared or leaky junction
(eae egomer germanium vansitors should show
faaatance reading ofa least 20 bobs.
Fig. D, Method of chocking the reverse resistance of both
Janetions.
“Typical readings taken with an chmmetar cn the Fxt0« sale are
Bekiohmre to 1.8 megohms. Shoon transistor ge much
Fighotrvstarcs resdinge, Power vanaotore have larger JINe-
tions and therfore greta leakage currants, Revers bis
Feostavoe readings should be 80 ions o: greater for power
Revorso-resietance checks on NPN transistors are made by reve
‘ing the ohrneter leads so they ary opposite f0 that shown in
ig B' Note met te act! nurorealreaing iv fre ia moar
Frajone, because the ahmmetee an only raasure nest
‘eastatoos, The pectic okmeeadng changes from meter to
‘eer eid ie not te sore for afferent stings ofthe range
"The minimum ard raxinun values gen here apB in
Vmojorty of coves, To increase fe accuracy of the ofmmeter
ie Yeodinge thecld be compared with those ade On 2
(900d traitor ofthe sare tye.
Tay
a
Fig. E. Gain measurement using en ohmametor.
Current Gain — Transisor action may be checked with an
Shrimeter by means ofthe sotup showin Fig. E. The meter
carves tee beore the Soo Kibhen router touched tothe
bese, comiecing fe rosstor aoa a smal bese bias to be 8b-
Bled, th mer stow cee neuen (eee
Fessiance reading)
‘Testing Field Effect Transistors
“Testing felt tect devas is semewhat more complicated than
[Shiny Bipolars ond must take nto see2ur tho folowing
1 ts te device a JFET oF MOSFET?
2. ts ne FET an r-chonnel or p-channal type?
3: Ifthe device @ MOSFET, le itan enhencement or depletion
"eo?
1 not aterot to remove fom the circuit or handle a FET.
‘ness certain thatthe device fea JPET or an naleed- gate
protectod MOSFET, The wereatian i eosantal, because an
Crinslgtod ote protected MOSFET may be damaged unis
braper nenolng secsucone are taker. When ering ot Iaor.
fing o removing thi tye ef MOSFET, the folowing should be
‘observed
1. Prieto asombly into a crit, ll lads should be kent
Reta aagetver by ther the us of mots shorting stings
Sttachod 1 the device by the vendor, or by the use of @ 2on-
Sutive foam. Note "eri" ould MOL De use
[ecoure incon acquit hgh state charges.
2. When device are removed by hand from tel caries, the
fond being uted sheuld be at ground pote.
3, Tips of scdering irons shoud be grounded,
4. Devices should nove be inserted into or removed from t-
ats withthe power
‘Tasting the JFET — The forward resistance ofa JFET can be
‘hosted wits low vokage alates, prferbly onthe RxI00
‘Ele. Connect the postive lead to gated the negative laad 12
Sa aeain ge source, ren n-channel JPET. Reverse the ads i =
pProhannel type.
‘To teat tho vere rsistanen of a n-channel JFET. connect the
Tegatve led ofthe obmeratot tothe gato and the postive lead
ee dam or source, The device shoula show almost nit
Feeltance, Lower reacngs incicats athe leskag® ota shor.
Fevers the leads to test a p-channel device.
‘Testing the MOSFET — The forward resistance and reverse
Testun ean be cece wits ‘Shrametor on the
Fight "A" scale, The inulatod-gate MOSFET nas on extremely
Nghinput resistance. Henco, we should obtain almost inte
raster reac for both forward and revere resistance tos
[etmgen gate and drain of sourea. Lower readings inca
Hodiionnn ine mavaton between gave snd cin or sourceTesting Diodes
Diodes ad Rectifiers — Sgcauns dod and ecto re
‘onamaltyng devies, simple tosis or shor, pers, er ei-
sine rsh hoe fey ae le
Sning 6 folloning texts anol appease othe
Speci Case of ocur doges ars hgh votage ties Rewer.
The forward renstares of lode a rote scree Oy sor
‘cing the postive and nogatve lads ofan ohmmete,
brofobiy ot to te RxtO0 sca, to the eapeceve postive
[snod) dnd negative (cathode) Yorirais. A reading of out
‘30 to Gad ohms normal or sltcan pss, bow 0 te 30)
‘hme for gomantur typos, and for lator fe feces ge
‘ani ofslleon) the Yeatance sovewhet lover that tir
‘omc eyes, Seause nah rotoge yoke nay have
Several dines nares, Mager rastance esc canbe or
As quick go/no-go tet, te ohrmetar procedure ist dase
To chack for shorts of exconsve leskege, sich to a higher
fasstance scale and rovers the ofmmete loads. A lw
fesstance reading indietes a shor or leaky device, Germanium
‘oder chould chow a feitane reading tom about 100 hihi
to} megohm. Slicon dodes show higher rnstanoe regcngs
td Can go uD te 1000 megohms: However, some codes Tay
‘Show lower essances but function satfscterly in vome oi
‘ut. Rectifiers, Decnus they general have argerjunctons,
ove higher leakego surents,
Zenor Diodes ~ To quick determine If Zanes have open,
‘Sorts, or lsatage, connect an ahmmeter fh the foward sre:
‘ion in the some hanner as doesribed for standar odes,
Z| osvormeree
However, these ts. sthough hulp do sot provide the
brio iterator needed fer a Zret dogs, rary the
Levies mguating ot saad wast & regen tet oc
Comlshed witha metered scusaba power suppy thet
preferably ineates tage ard caren
‘Connect the output ofthe power supply through aiming
racist in geie with tho Zaner ode tba ttle and sly
‘ease the output voltage und the spectted curent is fowing
‘ough the Zener Igoe Fig. FI Now conmect a voltmet 2705
the Zane to manitar tho fener vntageFusctusts the urent o
ther side of the specfod Zoner currant if he Zenor fe
porting propery the votage should Tent conan
Testing SCRs and TRIACS (Thyristors)
‘The functional esting of SCRS and TRIACS usually requires test
sRuloment cali pang fe spectiod gate arnt ig
the SCR ard TRIAC sections of hie
‘id ism Pal ee
ia given in chart form
“Teotng wth an ohmrmmter is nt recommended for hgh current
TeySte and ho oni b ua fer tn xno ow
sutent Thyisters. The igr and og partes of
“Thyitor my excond te ture “Sth pay ofthe oh
‘peter cousin fle reedings and therefore, ray Not akaye
‘Geaw te tue uncton ofthe dence
owever, asimole ohraneter test on low power Thyrstors may
lovee an spproximate evaistion of thar gate Sang capable
Er-connecting an chmmeter as shown in Fp G. The negate.
leads connected fo cethode end the postive lead i CoN
woanede,
Using the Fct scale, short the gate to the anode. A reading of,
spormaaty t's ohne rma Not When te ie
{ayode short removed. the sme reading shoul ei
‘thereto unt he a ar remored from cathedo or the
‘sods. Now, fecomecting the meter eaes to cathode ana,
{ode should show no reading Urtl the gates aga shored to
the snoce.
Testing of Gate turn off SCRs requires special test equloment,
Fel sing of tev SERS i Sou on Spay pom or
cg
Fo F. Hookup arrangement for teating Zener diodes,
Fa. @. Hookup arrangement for testing thytstore with an