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cm2
LN DN N 35 7 10 6 s 156 .5 µm xAbs
s
c) E1 E ( x 0) (1 R) E0 713.9 W/m2
E2 E ( x d ) E1 e d 176.0 W/m2
EAbs E1 E2 537.9 W/m2
d) With the mirrored rear side the optical cell thickness is practically doubled:
E1 E ( x 0) E0
E2 E ( x 2 d ) E1 e 2 d 60.8 W/m2
EAbs E1 E2 939.2 W/m2
EAbs
e) Abs 93.22 %
E0
q
S ( ) Ext
hc
1
Here : Ext Abs S ( ) 1 μm 93.22 % 75.18 %
1,24 μm
Shunt Resistance:
Local short circuits of the p-n junction, insufficient insulation at the edges of the solar cell.
ΔWG 1.12 eV
8.63105 eV/K 298.15K
b) Saturation current density: jS KS e k T 40 000 A/cm e
2
5 fA/cm2
I SC j 80.8 mA/cm2
Open circuit voltage: VOC VT ln VT ln Max 26 mV ln 791 mV
IS jS 5 10 15 A/cm2
VOC 791 mV
1 ln( 0.72) 1 ln( 0.72)
VT 26 mV
c) With Equation (4.18): FF 1 1 85.9 %
UL 791 mV
1 1
UT 26 mV
1000 jMax
VOC VT ln VOC VT ln 1000 791 mV 26 mV 6.908 971 mV
jS
VOC 971 mV
1 ln( 0.72) 1 ln( 0.72)
VT 26 mV
FF 1 1 87.9 %
VOC 971 mV
1 1
VT 26 mV
jMax
VOC FF 0.971 V 80.8 A/cm2 0.879
T 68.9 %
E 1 000 000 W/m2