TIC106 SERIES

SILICON CONTROLLED RECTIFIERS

Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997

● 5 A Continuous On-State Current

TO-220 PACKAGE
● 30 A Surge-Current (TOP VIEW)
● Glass Passivated Wafer
K 1
● 400 V to 800 V Off-State Voltage
A 2
● Max IGT of 200 µA
G 3

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC106D 400
TIC106M 600
Repetitive peak off-state voltage (see Note 1) VDRM V
TIC106S 700
TIC106N 800
TIC106D 400
TIC106M 600
Repetitive peak reverse voltage VRRM V
TIC106S 700
TIC106N 800
Continuous on-state current at (or below) 80°C case temperature (see Note 2) IT(RMS) 5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
IT(AV) 3.2 A
(see Note 3)
Surge on-state current (see Note 4) ITM 30 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 1.3 W
Average gate power dissipation (see Note 5) PG(AV) 0.3 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2) Si se quiere hacer operar a un dispositivo sin que se supere la temperatura máxima de la unión, la resistencia térmica total máxima permitida
se calcula mediante:
a) La geometría, el material y el tipo de enfriamiento del disipador utilizado.
b) Utilizando los datos de la hoja de características del fabricante del disipador.
c) La potencia térmica generada y la máxima diferencia de temperatura entre la unión y el ambiente.
d) Utilizando únicamente el calor especifico de cada uno de los sistemas que intervienen en la transferencia de calor.

1) Una de las siguientes referencias es correcta:

a) En un dispositivo semiconductor las variaciones de temperatura producen esfuerzos mecánicos cíclicos entre la superficie de contacto y la
pastilla y la base de cobre.
b) Los esfuerzos periódicos generados térmicamente pueden llegar a provocar un tipo de falla por desgaste conocida como fatiga cíclica. No
existe fática ciclica
c) Un dispositivo sometido a una temperatura superior a la temperatura de juntura máxima puede volver a operar normalmente después de
enfriarse lo suficiente.
d) En un dispositivo semiconductor la potencia térmica generada es independiente de la corriente eléctrica que circula por él.

2) La Rthh-amb de un radiador no depende de una de las siguientes propiedades (entendiendo por dependencia que la variación de la
propiedad modifica el valor de la Rth)
a) La superficie del mismo
c) La temperatura ambiente.
b) El color.
d) El material con el que está construido.

PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM RGK = 1 kΩ TC = 110°C 400 µA
off-state current
Repetitive peak
IRRM VR = rated V RRM IG = 0 TC = 110°C 1 mA
reverse current
IGT Gate trigger current VAA = 6 V RL = 100 Ω tp(g) ≥ 20 µs 60 200 µA
VAA = 6 V RL = 100 Ω TC = - 40°C
1.2
tp(g) ≥ 20 µs RGK = 1 kΩ
VAA = 6 V RL = 100 Ω
VGT Gate trigger voltage 0.4 0.6 1 V
tp(g) ≥ 20 µs RGK = 1 kΩ
VAA = 6 V RL = 100 Ω TC = 110°C
0.2
tp(g) ≥ 20 µs RGK = 1 kΩ
VAA = 6 V RGK = 1 kΩ TC = - 40°C
8
Initiating IT = 10 mA
IH Holding current mA
VAA = 6 V RGK = 1 kΩ
5
Initiating IT = 10 mA
Peak on-state
V TM ITM = 5 A (See Note 6) 1.7 V
voltage
Critical rate of rise of
dv/dt VD = rated VD RGK = 1 kΩ TC = 110°C 10 V/µs
off-state voltage
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.5 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

1) Una de las siguientes referencias es incorrecta:

a) En un dispositivo semiconductor operando con corriente variable, el equilibrio térmico se consigue cuando la potencia térmica evacuada se
iguala a la potencia térmica generada.
b) Los esfuerzos mecánicos periódicos generados térmicamente pueden llegar a provocar un tipo de falla por desgaste conocida como fatiga
térmica.
c) Un dispositivo sometido a una temperatura superior a la temperatura de juntura máxima puede volver a operar normalmente después de
enfriarse lo suficiente.
d) En un dispositivo semiconductor (un diodo por ejemplo) la potencia térmica generada es igual al valor medio del producto i(t).v(t) donde i(t) es
la corriente que lo atraviesa y v(t) es la tensión entre sus terminales.

Porque en el nomograma se entra por un solo lado(lado de potencia)?

Porque la ventilación forzada no depende de la velocidad del ventilador

1) Una de las siguientes referencias es incorrecta:

a) En un dispositivo semiconductor operando con corriente variable, el equilibrio térmico se consigue cuando la potencia térmica evacuada se
iguala a la potencia térmica generada.
b) Los esfuerzos mecánicos periódicos generados térmicamente pueden llegar a provocar un tipo de falla por desgaste conocida como fatiga
térmica.
c) El rendimiento de un radiador es la relación entre el calor que transfiere y el que transferiría si toda la superficie estuviera a la temperatura del
punto más caliente.
d) En el circuito equivalente térmico-eléctrico, las capacitancias térmicas más cercanas a la fuente de calor son de valor elevado.

El rendimiento es la relación entre el calor que transfiere el disipador y el que transmitiría si toda la superficie estuviera a la temperatura del
punto más caliente
a)N=0.5 b)N<0.5 c)N=0.9

Para mejorar el rendimiento de un disipador tengo que:

a)Aumentar la RTH h-amb
b)Aumentar la superficie del disipador
c)A y b son correctas(Aumentar la RTH h-amb y la superficie del disipador)
d)ninguna

PRODUCT INFORMATION

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 TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

30 V

6Ω IT
VG
VA 10%
DUT t gt
RG
G
VG VA
IG
90%

PMC1AA
Figure 1. Gate-controlled turn-on time

30 V

0.1 µ F
6Ω to 0.5 µ F R2
NOTES: A. Resistor R1 is adjusted for the specified value
of I RM .
B. Resistor R2 value is 30/IH , where I H is the
IA holding current value of thyristor TH1.
R1 C. Thyristor TH1 is the same device type as the
DUT.
VA D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
DUT TH1 current waveform with the following
RG RG characteristics:
G1 G2 tP = 50 µs to 300 µs
VK duty cycle = 1%
V G1 IG (IRM Monitor) V G2 E. Pulse Generators, G1 and G2, have output
IG
0.1 Ω pulse amplitude, V G , of ≥ 20 V and duration of
10 µs to 20 µs.

G2 t P Synchronisation

V G1

V G2

IT
IA tP
0

IRM

VA
VT
0

tq PMC1AB
Figure 2. Circuit-commutated turn-off time

PRODUCT INFORMATION

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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

AVERAGE ANODE ON-STATE CURRENT MAX CONTINUOUS ANODE POWER DISSIPATED

DERATING CURVE vs
CONTINUOUS ON-STATE CURRENT
TI20AA TI20AB

PA - Max Continuous Anode Power Dissipated - W

6 100
IT(AV) - Maximum Average Anode Forward Current - A

TJ = 110°C
Continuous DC
5

4
Φ = 180º

3 10

0° 180°
1 Φ
Conduction
Angle
0 1
30 40 50 60 70 80 90 100 110 1 10 100
TC - Case Temperature - °C IT - Continuous On-State Current - A
Figure 3. Figure 4.

SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE

vs vs
CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION
TI20AC TI20AD
100 10
TC ≤ 80 °C
RθJC(t) - Transient Thermal Resistance - °C/W
ITM - Peak Half-Sine-Wave Current - A

No Prior Device Conduction

Gate Control Guaranteed

10 1

1 0·1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 5. Figure 6.

PRODUCT INFORMATION

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 TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC20AA TC20AB
1

VAA = 6 V VAA = 6 V
RL = 100 Ω RL = 100 Ω
IGT - Gate Trigger Current - µA

0·8

VGT - Gate Trigger Voltage - V

tp(g) ≥ 20 µs Ω
RGK = 1 kΩ
tp(g) ≥ 20 µs
100
0·6

0·4

0·2

10 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TC - Case Temperature - °C TC - Case Temperature - °C
Figure 7. Figure 8.

GATE FORWARD VOLTAGE HOLDING CURRENT

vs vs
GATE FORWARD CURRENT CASE TEMPERATURE
TC20AC TC20AD
10 10

IA = 0 VAA = 6 V
TC = 25 °C Ω
RGK = 1 kΩ
VGF - Gate Forward Voltage - V

tp = 300 µs Initiating IT = 10 mA
IH - Holding Current - mA

Duty Cycle ≤ 2 %

0·1 1
0·1 1 10 100 1000 -50 -25 0 25 50 75 100 125
IGF - Gate Forward Current - mA TC - Case Temperature - °C
Figure 9. Figure 10.

PRODUCT INFORMATION

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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

PEAK ON-STATE VOLTAGE GATE-CONTROLLED TURN-ON TIME

vs vs
PEAK ON-STATE CURRENT GATE CURRENT
TC20AE TC20AF
2.5 10.0
VAA = 30 V

tgt - Gate-Controlled Turn-On Time - µs

TC = 25 °C RL = 6 Ω
VTM - Peak On-State Voltage - V

2.0 tp = 300 µs 8.0 TC = 25 °C

Duty Cycle ≤ 2 % See Test Circuit and Waveforms

1.5 6.0

1.0 4.0

0.5 2.0

0.0 0.0
0·1 1 10 0·1 1 10
ITM - Peak On-State Current - A IG - Gate Current - mA
Figure 11. Figure 12.

CIRCUIT-COMMUTATED TURN-OFF TIME

vs
CASE TEMPERATURE
TC20AG
16
t q - Circuit-Commutated Turn-Off Time - µs

VAA = 30 V
14
RL = 6 Ω
IRM ≈ 8 A
12
See Test Circuit and Waveforms
10

0
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 13.

PRODUCT INFORMATION

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 TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20

3,96 10,4 1,32

ø 3,71 10,0 2,95 1,23
2,54
see Note B

6,6
6,0

15,90
14,55

see Note C
6,1
3,5

14,1
1,70 12,7
0,97 1,07
0,61
1 2 3

2,74 0,64
2,34 0,41

5,28 2,90
4,88 2,40

VERSION 1 VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab. MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.

PRODUCT INFORMATION

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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION