2N3055AG (NPN),

MJ15015G (NPN),
MJ15016G (PNP)

Complementary Silicon
High-Power Transistors
http://onsemi.com
These 2) La Rthh-amb de un radiador no depende de una de las
siguientes propiedades (entendiendo por dependencia que la variación
de la propiedad modifica el valor de la Rth)
15 AMPERE
a) La superficie del mismo COMPLEMENTARY SILICON
c) La temperatura ambiente. POWER TRANSISTORS
b) El color.
60, 120 VOLTS − 115, 180 WATTS
d) El material con el que está construido.
Features
PNP NPN
CASE 3 CASE 3

MAXIMUM RATINGS (Note 1) BASE BASE

1 1
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
2N3055AG 60 EMITTER 2 EMITTER 2
MJ15015G, MJ15016G 120
Collector−Base Voltage VCBO Vdc
2N3055AG 100 CASE
MJ15015G, MJ15016G 200
Collector−Emitter Voltage Base VCEV Vdc
Reversed Biased
2N3055AG 100 2
MJ15015G, MJ15016G 200 1
Emitter−Base Voltage VEBO 7.0 Vdc TO−204 (TO−3)
CASE 1−07
Collector Current − Continuous IC 15 Adc
STYLE 1
Base Current IB 7.0 Adc
Total Device Dissipation PD MARKING DIAGRAMS
@ TC = 25_C
2N3055AG 115 W
MJ15015G, MJ15016G 180 W
Derate above 25_C
2N3055AG 0.65 W/_C 2N3055AG MJ1501xG
MJ15015G, MJ15016G 1.03 W/_C AYWW AYWW
Operating and Storage Junction TJ, Tstg −65 to +200 _C MEX MEX
Temperature Range
1) Una de las siguientes referencias es incorrecta:
a) En un dispositivo semiconductor operando con corriente variable, el 2N3055A = Device Code
equilibrio térmico se consigue cuando la potencia térmica evacuada se iguala
MJ1501x = Device Code
a la potencia térmica generada.
b) Los esfuerzos mecánicos periódicos generados térmicamente pueden llegar x = 5 or 6
a provocar un tipo de falla por desgaste conocida como fatiga térmica. G = Pb−Free Package
c) El rendimiento de un radiador es la relación entre el calor que transfiere y el A = Assembly Location
que transferiría si toda la superficie estuviera a la temperatura del punto más Y = Year
caliente. WW = Work Week
d) En el circuito equivalente térmico-eléctrico, las capacitancias térmicas más MEX = Country of Origin
cercanas a la fuente de calor son de valor elevado.
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Characteristics Symbol Max Max Unit
BJT MJ15015 a 23W no se quema a 32 si
Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

September, 2013 − Rev. 7 2N3055A/D
 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS (Note 2)

Collector−Emitter Sustaining Voltage (Note 3) 2N3055AG VCEO(sus) 60 − Vdc

(IC = 200 mAdc, IB = 0) MJ15015G, MJ15016G 120 −

Collector Cutoff Current ICEO mAdc

(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055AG − 0.7
(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015G, MJ15016G − 0.1

Collector Cutoff Current (Note 3) 2N3055AG ICEV − 5.0 mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015G, MJ15016G − 1.0

Collector Cutoff Current ICEV mAdc

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055AG − 30
TC = 150_C) MJ15015G, MJ15016G − 6.0

Emitter Cutoff Current 2N3055AG IEBO − 5.0 mAdc

(VEB = 7.0 Vdc, IC = 0) MJ15015G, MJ15016G − 0.2

SECOND BREAKDOWN (Note 3)

Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(t = 0.5 s non−repetitive) 2N3055AG 1.95 −
(VCE = 60 Vdc) MJ15015G, MJ15016G 3.0 −

ON CHARACTERISTICS (Note 2 and 3)

DC Current Gain hFE −

(IC = 4.0 Adc, VCE = 2.0 Vdc) 10 70
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 −

Collector−Emitter Saturation Voltage VCE(sat) Vdc

(IC = 4.0 Adc, IB = 400 mAdc) − 1.1
(IC = 10 Adc, IB = 3.3 Adc) − 3.0
(IC = 15 Adc, IB = 7.0 Adc) − 5.0

Base−Emitter On Voltage VBE(on) Vdc

(IC = 4.0 Adc, VCE = 4.0 Vdc) 0.7 1.8

DYNAMIC CHARACTERISTICS (Note 3)

Current−Gain − Bandwidth Product 2N3055AG, MJ15015G fT 0.8 6.0 MHz

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016G 2.2 18

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 60 600

SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)

RESISTIVE LOAD

Delay Time td − 0.5 ms

Rise Time (VCC = 30 Vdc, IC = 4.0 Adc, tr − 4.0 ms

IB1 = IB2 = 0.4 Adc,
Storage Time tp = 25 ms Duty Cycle v 2% ts − 3.0 ms

Fall Time tf − 6.0 ms

4) La selección de un fusible de protección contra sobrecargas y cortocircuitos implican dos parámetros:
a) I2t fus>I2t dispositivo ; Iav fus>Iav trabajo ; c) I2t fus>I2t dispositivo ; Iav fus<Iav trabajo
b) I2t fus<I2t dispositivo ; Iav fus>Iav trabajo ; d) I2t fus< I2t dispositivo ; Iav fus<Iav trabajo
5) ¿Que utilizaría para proteger a un tiristor contra una elevada dv/dt?:
a) Un varistor en paralelo con el tiristor. ; c) Una inductancia en serie conectada al ánodo del tiristor.
b) Un circuito RC en paralelo con el tiristor. ; d) Un fusible rápido en serie conectado entre la carga y el ánodo del tiristor.

http://onsemi.com
2
 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

200

PD(AV), AVERAGE POWER DISSIPATION (W)

150

MJ15015
MJ15016
100

50 2N3055A

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

200 2.8
TJ = 25°C
100 TJ = 150°C 2.4
70
hFE , DC CURRENT GAIN

50 2
-55°C
30 1.6 IC = 1 A 4A 8A
20
VCE = 4.0 V 25°C 1.2
10
7 0.8
5
0.4
3
2 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)

Figure 2. DC Current Gain Figure 3. Collector Saturation Region

T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

3.5 10
TC = 25°C
3
5.0 MJ15016
2.5
V, VOLTAGE (VOLTS)

2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages Figure 5. Current−Gain − Bandwidth Product

http://onsemi.com
3
 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+30 V 3
2

t, TIME (s)
tr

μ
7.5 W
25 ms 1
+13 V 30 W SCOPE 0.7
0 0.5

1N6073 0.3
-11 V
0.2
tr, tf ≤ 10 ns td
-5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)

Figure 6. Switching Times Test Circuit Figure 7. Turn−On Time

(Circuit shown is for NPN)

10 400
7 TJ = 25°C
5 2N3055A
3 200 Cib MJ15015
C, CAPACITANCE (pF)

2 ts MJ15016
t, TIME (s)
μ

tf
0.1 100
0.7
0.5 VCC = 30 50 Cob
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C 30
0.1 20
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Turn−Off Times Figure 9. Capacitances

http://onsemi.com
4
 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

COLLECTOR CUT−OFF REGION

NPN PNP
10,000 1000
VCE = 30 V VCE = 30 V
1000 100
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

μ
100 10 TJ = 150°C
TJ = 150°C
10 1.0
100°C 100°C
1.0 0.1 IC = ICES
IC = ICES
REVERSE FORWARD
REVERSE FORWARD
0.1 0.01 25°C
25°C
0.01 0.001
+0.2 +0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015 Figure 11. MJ15016
20 20
30 ms 0.1ms
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMP)

10
10
100 ms 5.0
1 ms 1.0ms
5
2.0

100 ms 1.0 100ms

BONDING WIRE LIMIT BONDING WIRE LIMIT
2 THERMAL LIMIT @ TC = 25°C dc THERMAL LIMIT @ TC = 25°C
0.5
(SINGLE PULSE) (SINGLE PULSE)
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT dc
1 0.2
10 20 60 100 15 20 30 60 100 120
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area Figure 13. Forward Bias Safe Operating Area
2N3055A MJ15015, MJ15016

There are two limitations on the power handling ability of The data of Figures 12 and 13 is based on TC = 25_C;
a transistor: average junction temperature and second TJ(pk) is variable depending on power level. Second
breakdown. Safe Operating area curves indicate IC − VCE breakdown pulse limits are valid for duty cycles to 10% but
limits of the transistor that must be observed for reliable must be derated for temperature according to Figure 1.
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

ORDERING INFORMATION
Device Package Shipping
2N3055AG TO−204 100 Units / Tray
(Pb−Free)
MJ15015G TO−204 100 Units / Tray
(Pb−Free)
MJ15016G TO−204 100 Units / Tray
(Pb−Free)

http://onsemi.com
5
 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)

PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U
L −Y− E 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

http://onsemi.com 2N3055A/D
6
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

ON Semiconductor:
MJ15015 MJ15016