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st important ma . reread of semiconductor materials Over the years many semiconductors «portion of the periodic table related 10 ductors, those composed of dou germanium (Ge), ean be found in xd semiconductors are composed of 0 OFF lium arsenide (GaAs) isa TH=V com Ga) from Colum II and arsenie (As) from ( clement and compound semiconductors, Prior to the invention ofthe bipolar tr ily as twonterminal devices, such as rly 1950s, germanium was the major: ium proved unsuitable in many hibited high leakage currents at only nddition, germanium oxide is water tion. Since the early 1960s silicon has now virally supplanted germanium as lion. The main reasons we now use ‘ouch lower leakage currents, and igh-qual chermally. ‘There i also an economie eonsidera Table 1 Portion of the Petlodie Table Column tf Mp Magnesium — Aluminum zn Ga Zinc cd Cadmium Hp Mercury ed with hard spheres, and In Fig. 2 we note that there are fea cine, it the ACEF plane (our some ga fmter) and that the atomic spacings me cl ind ent Popes along deren panes cal and other device characteris ate A convenient method of defining the vaste dices. These indies are oblained waing te 1) Find the intercepts of the plane on the three terms of the latice constant. 2) Take the reciprocals of these numbers and) three integers having the same ratio, 3) Enclose the result in parentheses (kf) ag the 10 atoms together. For a rincblende lattice najor bonding fore is from the covalent bond slight ionic bonding foce that fs an electrostatic atrace i’ Ga” ion and its four neighboring As* ions o Pe hboring Ga~ ions pecive At low temperatures, the electrons ate be ae eee saape for conduction. ALB a ne des io ak imrcsred eae Sires \ Broken, a fee electron results that can pasos ee \ Figare Ta shows the situation when a valence clect™oo BECO cy may be a paleo bondarTuis WSRCEEST Crh An electron deficiency is left in i in ashi fated by one of the neighboring electrons, whieh Tea deiieny location, a: Erm location A to fcation Bis Fi. fore consider this deficiency as a particle similar 0 particle is called a hole. It carics « postive Sharky rane can applied electric Held, inthe dretion OPPS e eee. Tne concept ofa hole is analogous 19 that OF 8 bubble i Although itis actually the liquid that moves i much easier 10 talk ‘motion of the bubble in the opposite direction ip, We may these This fttions ‘under the that of an in a qui about the 1.4 ENERGY BANDS have only discrete electrons of the atom can ay levels for an isolated Hysroes® atom For an isolated atom, th energy levels. For example, the ener are given by the Bohr model”: upper band called Figures insulitors, semiconductors Benn Houde (S10), he valence estos fre la eLectaoy ‘eNeney ZLGH: Gonoucrion By, 7 Fig. 8 Formation of energy bands as a together isolated silicon atoms. 5 nage, Serena = ci ® 2 rg seat ta bn an a st. a sons. These bonds a iil to break, and 2 som To percipae 1s Ceol conduc. Ab aia Cane a ee eps Ne

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