iL. 12, 13, 14, Chapter 6 Basic BJT Amplifiers ‘What are the changes in the de and ac characteristics of a common-emitter am- plifier when an emitter resistor and an emitter bypass capacitor are incorporated in the design? Discuss the concepts of a de load line and an ac load line. ‘Sketch a simple emitter-follower amplifier circuit and discuss the general ac circuit characteristics (voltage gain, current gain, input and output resistances) ‘Sketch a simple common-base amplifier circuit and discuss the general ac circuit characteristics (voltage gain, current gain, input and output resistances). ‘Compare the ac circuit characteristics of the common-cmitter, emitter-follower, and common-base circuits Discuss the general conditions under which a common-emitter amplifier, an emitter-follower amplifier, and a common-base amplifier would be used in an electronic circuit design, State atleast two reasons why a multistage amplifier circuit would be required in ‘a design rather than a single-stage circuit. fe PROBLEMS [Note: In the following problems, assume that the BE tum-on voltage is 0.7 V for both npn and pnp transistors and that V4 — 90 unless otherwise stated, Also assume that all capacitors act as short circuits to the signal] Section 6.2 The Bipolar Linear Amplifier 61 Determine he sa ARAIQ EDF, EAD ANGE oo win parameters = 180 and V4 = 150 V for bias currents of () Ico = 0.5 mA and (ii) [og = 2 mA. (b) Repeat part (a) for = 80 and V, = 100V when biased at @) Ico = 0.25mA and (ii) Ieg = 804A, 6.2 (a) The transistor parameters are f= 125 and V4 = 200. A value of fm = 95 mA/V is desired, Determine the required collector current and then find ry and r,. (b) A second transistor has small-signal parameters of Bm = 120mAJV and ry = 1.2K. What is the quiescent collector current and the transistor current gain? 6.3. A transistor has a current gain in the range 90 < < 180 and the quiescent 64 The transistor in Figure 6.3 has parameters 6.5 For the circuit in Figure 6, 6.6. For the ci collector current is in the range 0.8 < Icg = 1.2 mA, What is the possible ange in the small-signal parameters gq and r_? 20 and Vx = 0. The cit- cuit parameters ate Veo =33V, Re = 1Sk8, and Teg = 0.12mA. A smal signal tye = Ssinot mV is applied. (@) Determine fc and vce (&) What is the small-signal voltage gain Ay = vee/tBe? the transistor parameters are fi = 120, Vag(on) = 0.7V, and Vs = 80V. The circuit parameters are Voc = 3.3, IOV, Re = 4K, and Ry = 11OKM, (2) Determine the hybrid- parameters. (b) Find the small-signal voltage gain A, = v,/v,. (©) I the time-varying output signal is given by vp = 0.Ssin(1000) V, what i v (0? uit in Figure 63, = 120, Veo = 5 V, Va = 100 V, and Ry = 25 KO (a) Determine Vay and Re such that ry = 5.4 KS and the Q- point is inthe center ofthe Toad line, (b) Find the resulting small-signal voltage pain Ay = to/v; Van = 451452 Part Semiconductor Devices and Basic Applications 67 68 ‘The parameters of each transistor in the circuits shown in Figure P6.7 are f = 120 and Ieg = 0.5mA. Determine the input resistance Ry for each circu. Bal ayesoua i By + iin | fe (a) to) @ Figure 67 ‘The parameters of each transistor in the circuits shown in Figure P6.8 are B = 130, Vg = 80V, and [eg = 0.2mA. Determine the output resistance R, for each circuit. « ©) © Figure P68 69 6.10 AL ‘The circuit in Figure 6.3 is biased at Voc = 10 V and has a collector resis- tor of Rc = 4k82. The voltage Vim is adjusted such that Vo = 4 V. The transistor has P= 100, The signal voltage between the base and emitter is Ue = 5 sin cor(mV), Determine the total instantancous values of in(0) fc), and vet), and determine the small-signal voltage gain A, VCO) / tne. For the circuit in Figure 6.14, f= 100, Vs = 00, Vec = 10 Y, and Rp = SOQ. (a) Determine Vax and Rc such that [cp = 0.5 mA and the {@-point is in the center of the load line. (b) Find the small-signal parameters Byes» and rs. (€) Determine the small-signal voltage gain Ay = v./ vy ‘The ac equivalent circuit shown in Figure 6.7 has Re = 2 k82. The transis- tor parameters are gm = 50 mA/V and p = 100. The time-varying output voltage is given by v, = 1.2 sin wt (V), Determine vye(t) and is(),Chapter 6 Basic BJT Amplifiers 453 Section 6.4 Common-Emitter Amplifier 612 613 D614 D61S ‘The parameters of the transistor in the circuit in Figure P6.12 are = 150 and V4 = ce. (a) Detemmine R; and R, to obtain a bias-stable circuit with the Q-point in the center of the load line. (b) Determine the small-signal voltage gain Ay = v/v, vrassy Ge vo Figure P6.12 Assume that = 100, Vq = 00, Ri = 33KQ, and Ry = SOKS for the circuit in Figure P6.13. (a) Plot the Q-point on the de load line. (b) Deter- ‘mine the small-signal voltage gain. (¢) Determine the range in voltage gain ‘The wand paranctc DAD Oe Die AANGE! oo ant Q-point is in the center of the load line. (b) Determine the small-signal voltage gain of the designed circuit. Veo=33V = 2M Figure P6.13 Figure P6.15 For the circuit in Figure P6.15, the transistor parameters are f= 100 and Vq = 00. Design the citcuit such that Jeg = 0.25 mA and Vexg = 3 V.454 Part Semiconductor Devices and Basic Applications 6.16 ig Find the small-signal voltage gain Ay seen by the signal source 1, Assume the transistor in the cicuitin Figure P6,16 has parameters 6 100 V. (a) Design a bias-stable circuit such that Verso = 5.20. (b) Determine the small-signal wansresistance function Ry = vo/iy ng the results of part (a), determine the variation in Ry if ‘5 150. Jo/vs. Find the input resistance 20 1) tao 0807mA, co Rata, "Sel, he “i I . 7 + rd Figure P6.16 Figure P6.17 6.17 618 Apa of Ey Bindaepyf FePP enbfi — 100V, H design the circuit %.17 such that the de voltages atthe ase and collector terminals are 0.20 V and —3 V, respectively, and (ii) determine the small-signal transconductance function Gy = in/v,. (b) Repeat part (a) for = 120 and Va = 80V, ‘The signal source in Figure P6.18 is v, = Ssinaot mY. The transistor para- ‘meters are 6 = 120 and V, = 00. (a) (i) Design the circuit such that Ico =0.2SmA and Vero =3V. (ii) Find the small-signal voltage gain vo/ vy (ii) Find v, (0). (6) Repeat part (a) for Rs vasy Resi Figure P6.18Chapter 6 Basic BJT Amplifiers 455 6.19 Consider the circuit shown in Figure P6.19 where the signal-source is v, = 4sineot mV. (a) For transistor parameters of f= 80 and V4 = 00, (4) find the small-signal voltage gain A, = v/v, and the transconductance function Gy = i,/v,, and (ii) calculate v4 (P) and ig(0). (b) Repeat past (a) for f = 120. nessa, She Figure P6.19 Figure P6.20 6.20 Consider the citcuit shown in Figure P6.20. The transistor parameters are too and Vs 10, i 621 The panmet of te Geet ete n HL PEAS = 100 tnd a= 100V. Pind the de valags atthe ue and enter emia (© Find Re uch a Voge = 35 V0) Assing end Cp ac sho Shuts, dicmane the snallignalvlage gun = y/o (epost pao) a S00 suse ester sin sees wig source Re ; nesing OE co R= 1000 ~~" Rs=2000 Cor tT pt “ be ayetain Figure P6.21 Figure P6.22 6.22 For the circuit in Figure P6.22, the wansistor parameters arc f = 180 and r, = 00. (a) Determine the Q-point values. (b) Find the small-signal Ihybrid-7 parameters, (c) Find the small-signal voltage gain Ay = v/¥456 Part Semiconductor Devices and Basic Applications 623 nena J Le feito at t For the circuit in Figure P6.23, the transistor parameters are & = 80 and Va = 80V. (a) Determine Re such that xg = 0.75 mA. (b) Determine Re such that Veeg =7 V. (c) For Ry, = 108, determine the small-signal voltage gain A, = v,/vs, (d) Determine the impedance seen by the signal fe ry Figure P6.23 Figure P6.24 624 D625 626 ‘The transistor in the circuit in Figure P6.24 has parameters Vy (on) = 0.7 V, V4 = SOV, and. ame inthe range 80 = 6 < 120, Determine (a) the Apagortibakenhancer:/,.0) te rng inte inp resistanc® Ry, and (6) the range inthe output resistance Ry Design a one-transistor common-emitter preamplifier that can amplify a 10 mV (sms) microphone signal and produce a 0.5 V (rms) output signal ‘The source resistance of the microphone is 1 k®2. Use standard resistor values in the design and specify the value of f required. For the transistor in the circuit in Figure P6.26, the parameters are f = 100 and Vq = o0. (a) Determine the Q-point,(b) Find the small-signal parame- ters fm. x. and 7s. () Find the small-signal voltage gain Ay = vp/v, and the small-signal current gain Ay = i,/%,, (8) Find the impot resistances Riy and R,,,(e) Repeat part (c) if Rs = 0. vreqi6v Figure P6.26627 6.28 6.29 D630 D631 Section 632 633 634 635 636 Chapter 6 Basic BJT Amplifiers If the collector of a transistor is connected to the base terminal, the transis- tor continues to operate in the forward-active mode, since the BC junction is not reverse biased. Determine the small-signal resistance, re = Vee/ie, of this two-terminal device in terms of fim 74. and 7, (@) Design an amplifier with the configuration similar to that shown in Figure 6.31. The circuit is to be biased with Vec = 3.3 V and the source re- sistance is Rs = 10082. The minimum small-signal voltage gain is to be [Ag1= 10. The available npn transistors have parameters of f= 120 and Va = co. (b) Using the results of part (a), what is the resulting input resis- tance seen by the signal source and what is the resulting output resistance? ‘An ideal signal voltage source is given by v, = Ssin(S000%) (mV). The peak current that can be supplied by this source is 0.2 1A. The desired out pat voltage across a 10 k& load resistor is vp = 100 sin(S000r) (mV). De- sign a one-transistor common-emitter amplifier to meet this specification. Use standard resistor values and specify the required value of fi, Design a one-transistor common-emitter amplifier with a small-signal volt- age gain of approximately A, = ~10. The circuit is to be biased from a single power supply of Voc = $V that can supply a maximum current of (0.8 mA. The input resistance is to be greater than 20 k® and the output resistance isto be 5k®2. The available transistor isa pnp device with = 90 and Va = 00. Design a common-cmitter circuit whose output is capacitively coupled to a load resistor Ry, = 10k92. The minimum small-signal voltage gain is to be [As = 50. The circuit isto be biased at +5 V and each voltage source can suey «monn ABSA GO PDS ERNE 6.5 AC Load Line Analysis Consider the circuit shown in Figure P6.13. Assume Ry Ry = SOKA. The transistor parameters are 6 = 100 and Vi, mine the maximum undistorted swing in the output voltage if the total in stantaneous FC voltage is to remain in the range 0.5 < vee <3. For the circuit in Figure P6.15, let 8 = 100, Vx = 00, Re = 12.92, and Re =6kE2. Determine the maximum undistorted swing in the output voltage if the total instantaneous C-E voltage is to remain in the range 1 < vce <9 V and ifthe (otal instantaneous collector current is to remain greater or equal to 50 2A. Consider the circuit in Figure P6.19. The transistor parameters are = 80 and V = 00. (a) Determine the maximum undistorted swing in the output voltage if the total instantaneous C-E voltage is to remain in the range 0.7 < vce = 9V and the instantaneous collector is to be ic = 0. (b) Using the results of part (a), determine the range in collector current. ‘The parameters of the circuit shown in Figure P6.17 are Ry = 20k and Re =2.Sk82. The transistor parameters are = 80 and Vi, = 00. Deter- ‘mine the maximum undistorted swing in the output current if the total in- stantaneous collector current is to be fc > 0.08mA and the total instanta- neous E-C voltage is to be in the range 1 < vee <9. Consider the circuit in Figure P6.26 with transistor parameters described in Problem 6.26. Determine the maximum undistorted swing in the output 457458 Figure P6.40 Part Semiconductor Devices and Basic Applications 637 638 639 curtent ic ifthe total instantaneous collector current is ic > 0.1 mA and the total instantaneous C-E voltage isin the range 1 < vce = 21, For the ciscuit in Figure P6.20, the wansistor parameters ae f = 100 and Vq = 100 V. The values of Re, Re. and Ry, axe as shown in the figure. Design a bias-stabe ciscuit to achieve the maximum undistorted swing in the output voltage if the total instantaneous C- voltage is to remain in the sange 1 < vce <8 V and the minimum collector current is to be ic (min) = 0.1 mA. Jn the cicuit in Figure P6.22 with transistor parameters ff = 180 and Vq = 00, sedesign the bias resistors Rand Ry (0 achieve maximum sym- smetical swing in the output voltage and to maintain a bias-stable circuit ‘The total instantaneous C-E voltage is to remain in the range 0.5 < ce £45 V and the total instantaneous collector curtent is t0 be ic > 0.25 mA. For the circuit in Figure P6.24, dhe wansistor parameters ae = 100 and Vq = 00. (a) Detesmine the maximum undistorted swing in the output voltage if the total instantaneous E-C voltage is to remain in the range 1 Suge <9 V. &) Using the results of past (a), determine the range of col- lector current Section 6.6 Common-Collector (Emitter-Follewer) Amplifier 640 6Al 6A 63 igure 76.40 shows the ac eguiaet cuit ofan te fllowe the Sonssr parameters ate a0 and Va-— oe Pr p= 00, dete : Je gain in As 092 (9 Using eR ta IPTREMIIRRD Che ga rv — 2000 Dees rine the sal signal tpt sssance A beh pas) and) Cnet ac equnelent ict inFigueP 4, The ears puameter treB = f0anl Vs 2 () Desig ec id fog an psu that fae S0ka ant, 092-0) Uung he esse! pat ad Fore a equvaeatcicutn igure Poa Ry 1h ane wai parang ate 2 8 and Vy SOV Ft leg 2A. nd Ae and R,. (b) Repeat part (a) for fog = 0.2mA. ra De Ki ’ yetwwT FoR Io Figure P6.42 Figure P6.43 ‘The circuit and transistor parameters for the ac equivalent circuit in Figure P6.43 are Rs = 0.5kE2, f = 120, and Vq = 0. (a) Determine the required value of Ig to produce a small-signal output resistance of Ry (6) Using the results of part (a), find the small-signal voltage gain if V,Chapter 6 Basic BJT Amplifiers 459 644 ‘The twansistor parameters for the citcuit in Figure P6.44 are ff = 180 and Vp = 00. (a) Find eg and Vero. (b) Plot the de and ac load lines. (c) Cal- culate the small-signal voltage gain. (4) Determine the input and output resistances Ryy and Ry. grt, vl -10v Figure P6.48 Figure P6.45 6.48 Conteh euitin Fg P648.The wasitr ames te f= 120 SVs ne Repeat pats) tem 6 6.46 For the et thom in ite Poet Yer =33¥, Re = 440, Reossin. Rents cor ae p a0 and Vy = OND tbe eee OR og aa Veco.) Plt the ae and ala ins (© Deen Aa vf ad Wifi Find Raa Vee mek 5, we co P84 A . “ © SR, “| * t Figure P6.A6 Figure P6.47 6.87. For the transistor in Figure P6.47, & = 80 and V, ~ 150 V. (a) Determine the de voltages at the base and emitter terminals. (b) Calculate the small- signal parameters gq, 7», and 7. (6) Determine the small-signal voltage gain and curent gain. (4) Repeat pat (6) fa 2k source resistors in series with the v signal source460 Part Semiconductor Devices and Basic Applications 648 649 6.50 Consider the emitter-follower amplifier shown in Figure P6.48. The transis- tor parameters are = 100 and V4 = 100 V. (a) Find the output resistance R,. (b) Determine the small-signal voltage gain for @) Ry = 5009 and Gi) Ry = 5k. veay vesasy Figure P6.48 Figure P6.49 ‘The transistor parameters for the circuit in Figure PO.49 are f= 110, Vq = SOV, and Veu(on) = 0.7 V. (a) Determine the quiescent values Teg and Veco. (b) Find Ay, Ry, and Ry. (©) The signal source is (2) = 28 sina (V), Determine 1, (0), io), v9 (0, and 19300. he transis 0, eters are 6 = 10nd V, = ce. BBS SDI CE RAANERD ste pam nin bocen ter of the de Toad line, (b) Ifthe peak-to-peak sinusoidal output voltage is 4 V, determine the peak-to-peak sinusoidal signals at the base ofthe transistor and the peak-to-peak value of vy. (€) If @ load resistor Ry = 1k0 is connected to the output through a coupling capacitor, determine the peak- to-peak value inthe output voltage, assuming ® is equa tthe value deter- ‘mined in pat (6), Aer Ryan Coy pw Figure P6.50 61 Figure P6S1 In the circuit shown in Figure P6.51, determine the range in small-signal voltage gain Ay = v/v, and cumrent gain A, = i,/%, if f is in the range 75 << 150,Chapter 6 Basic BJT Amplifiers 6.52 The transistor current gain f in the circuit shown in Figure P6.52 is in the range 50 < = 200. (a) Determine the range in the de values of Is and Vi (&) Determine the range in the values of input resistance Rj and voltage gain Ay = Uo/ Us. teoo3¥ K, oes + fen . i " me fa Figure Passe 6.53 Consider the citeuit shown in Figure P6.47. The transistor current gain isin the range 100 < 6 < 180 and the Early voltage is V4 = 150 V. Determine the range in small-signal voltage gain ifthe load resistance varies srom Ry =0.5k8 to Ry — 500K 851 Forte cxcut in Ratp Ego MP DRéenhancer’ nt Ry = 5000. The transistor parimetrs are f — 120 2. (a) De- shane cut t buns salsa cue gain of 8, s/n 10 fo Ry = 5002, Find Ry, Ro, and also the small-signal output resistance R, (b) Using the results of pat (a, determine the curent gain for Ry = 2k & sm = Figure Pose D6.55_Design an emitter-follower circuit with the configuration shown in Fig- ‘ure 6.49 such that the input resistance Rj, as defined in Figure 6.51, is 120k®. Assume transistor parameters of 6 = 120 and V4 = oc. Let Vee = 5V and Ry = 2M. Find new values of Ry and Ro. The Q-point should be approximately in the center of the load line. 461482 Part Semiconductor Devices and Basic Applications 6.56 (a) For the emitter-follower “D8. in Figure P6.S4, assume Vec = 24 V, f=T75, and A; =i,/i,=8. Design the circuit to drive an 8 @ load. (b) Determine the maximum undistorted swing in the output voltage. (©) Determine the output resistance R,, 7 ‘The output of an amplifier can be represented by v, = 4.inwr(V) and Rs =4k0. An emitter-follower ciseuit, with the configuration shown in Figure 6.54, isto be designed such that the output signal does not vary by more than S percent when a load in the range Ky, = 4 to LKQ is connected to the output. The transistor current gain is in the range 90 = 8 < 130 and the Early voltage is V, = 00. For your design, find the minimum and max- imum possible value of the output voltage. *DS.58. An emitter-follower amplifier, with the configuration shown in Figure 6.54, is to be designed such that an audio signal given by v, = Ssin(3000r) V but with a source resistance of Rs = 10 k8? can drive a small speaker. Assume the supply voltages are V~ = +12 V and V~ = —12 V. The load, repre- senting the speaker, is Ry. = 12.92. The amplifier should be capable of de- livering approximately 1 W of average power to the load. What isthe signal ‘power gain of your amplifier? Section 6.7 Common-Base Amplifier 6.59 Figure P6.59 is an ac equivalent circuit of a common-base amplifier. The transistor parameters ate f = 120, V4 = 00, and [cg = 1 mA. Determine (@) the voltage gain Ay = V,/V;, (0) the current gain Ay = Iy/f, (©) the RBAge PDE EANBRER © Figure P5659 Figure P6.60 6.60, ‘The transistor in the ac equivalent ciscuit shown in Figure P6.60 has 6.61 parameters = 80 and Vq=oo. Determine (a) the voltage gain ‘Ay = Vo/V, () the current gain A, = [,/, and (c) the input resistance Ry (@) If Vs =80Y, find () the output resistance Rye and (i) the output resistance R, Consider the ac equivalent common-base circuit shown in Figure P6.61. ‘The transistor has parameters = 110 and Vq = 0. Determine (a) the voltage gain A, = V/V, (b) the current gain A, = 1,/J,(€) the input re sistance R), and (4) the output resistanceChapter 6 Basic BJT Amplifiers 463 Figure P6.61 6.62 gure P6.62 shows an ac equivalent circuit of a common-base amplifier ‘The parameters of the transistor are f= 120, Vge(on) =0.7V, and Vq = oe. (@) Determine the quiescent values Ig and Vorg. (b) Find the small-signal voltage gain Ay = V»/¥j. (€) Find the small-signal current gain Ay = lof fe & pag fF Enhancer ine Figure P6.62 663 The transistor in the circuit shown in Figure P6.63 has = 100 and V4 = oe. (a) Determine the quiescent values Icg and Vico. (b) Determine the small-signal voltage gain Ay = vs/ (6.64 Repeat Problem 6.63 with a 100.2 resistor in series with the v, signal fe, Ces ea Cox ay iia Figure P6.63 Figure P6.65 6.65. Consider the common-base circuit in Figure P6.65. The transistor has parameters f = 120 and V4 =v. (a) Determine the quiescent Vero. (b) Determine the small-signal voltage gain Ay = ve/0s464 Part Semiconductor Devices and Basic Applications Figure P6.66 6.66 For the circuit shown in Figure P6.66, the transistor parameters are = 100 and V4 = oo. (a) Determine the de voltages at the collector, base, and emitter terminals. (b) Determine the small-signal voltage gain Ay = v/v, () Find the input resistance vas (eon 667 6.68 6.69 *D6.70 Co R= tka Figure P6.67 ‘The parameters ofthe circuit in Figure P6.67 are Voc = 9V, Ry = 4k Re = 6k, Re = 482, Ry ~ 150K, and Rs — SOKA, The transistor poe ‘rameters are = 125, Vae(on) = 0.7 V, and V4 = 00. The input signal is a current (a) Determine the Q-point values. (b) Determine the trnsresistance function R, vefis. (c) Find the small-signal voltage gain Ay = vp/vs. Bromcyoniid he Een arrear Firwe P67, et Veo <3, Ry = 12KA, and Rp — 50082, The transistor parameters are ff ~ 100 and Vq = 96. (a) Design the circuit such thatthe minimum small-rignal voltage gain is Ay = vo/v, = 25. (b) What are the Q-point values? (c) Determine the small-signal voltae gain i Ry is bypassed by a lage capacitor Consider the circuit shown in Figure P6,69. The transistor has parameters = 60 and V, ~ oe. (a) Determine the quiescent values of eg and Ves (b) Determine the small-signal voltage gain A, — ¥/%, venus P)fo=10mA, tps. Rea son. Figure P6.69 A photodiode in an optical transmission system, such as shown in Fig- ‘ure 1.40, can be modeled as a Norton equivalent circuit with i, in parallelon D672 Chapter 6 Basic BJT Amplifiers with Rs as shown in Figure P6.67. Assume that the current source is given by i, = 2.5sin wt uA and Rs = 50k. Design the common-base circuit of Figure P6.67 such that the output voltage is v, = Ssin wr mV. Assume twansistor parameters of = 120 and Vs = 00. Let Vec = SV. In the common-base ciscuit shown in Figure P6.71, the transistor is a 2N2907A, with anominal de current gain of 6 = 80. (a) Determine fe-g and Veco. (b) Using the h-parameters (assuming hy, = 0), determine the range in small-signal voltage gain A, = v/v. (¢) Determine the range in input and output resistances R, and Ry. Figure P6.71 tte cc of Figure P67 et Vig = Vee =3 V,f = 100, Vs =o, Watage gs = AD SELRE FEIJES RANE ae of the small-signal parameters fj, _, and? Section 6.9 Multistage Amplifiers 673 674 Consider the ac equivalent eircutin Figure P6.73. The transistor parameters axe 1 = 120, fa = 80, Var = Van = 00, and egt = Ieqa = 1mA. (a) Find the small-signal voltage gain Au = V;./Vi. (6) Determine the small- signal voltage gain Avs = V.2/Vo1- (€) Find the overall small-signal voltage a Figure P6.73 Figure P6.74 ‘The transistor parameters in the ac equivalent circuit shown in Figure P6,74 are fy = 2 = 100, Vay = Vaz = 00, Teor = 0.SmA, and Leg, = 2mA. 465466 Part Semiconductor Devices and Basic Applications +678 +6.16 6 (a) Find the small-signal voltage gain Asi = Via/Vi. (b) Determine the small-signal voltage gain A.» = Vs2/Vs1. (€) Determine the overall small- signal voltage gain Ay = Vio/Vi ‘The parameters for each transistor in the circuit shown in Figure P6.75 are = 100 and V4 = 00. (a) Determine the small-signal parameters gm. x. and 7, for both transistors. (b) Determine the small-signal voltage gain cr = ver/¥, assuming vy is connected to an open circuit, and determine the gain Ay2 = v,/vos. (c) Determine the overall small-signal voltage gain ‘A, = 1,/0s- Compare the overall gain withthe product Ay» A,2, using the values calculated in pat () a fs “ tia fia Tee Figure P75 Apago PDF,.Enhancer Ges a a Te Min S300 Figure P6.76 Consider the circuit shown in Figure P6.76 with transistor parameters {= 120 and V4 = 00. (a) Determine the small-signal parameters gm. 7x. and ry for both transistors. (0) Plot the de and ac load lines for both tran- sistors. (©) Determine the overall small-signal voltage gain Ay = v,/t (4) Determine the input resistance R,, and the output resistance Ry. (6) De- termine the maximum undistorted swing inthe output voltage. ‘The transistor parameters for the circuit in Figure P6.77 are fi = 120, B2 = 80, Vag(on) = Vasa(on) = 0.7 Y, and Vai = Vaz = ob. (a) Deter- mine the quiescent collector current in each transistor. (6) Find the small- signal voltage gain A, = v,/v,.(€) Determine the input and output resis- tances Ry» and Ry,+678 6.19 6.80 681 Chapter 6 Basic BJT Amplifiers Veos 9 Figure P6.77 Figure P6.78 For each transistor in Figure P6.78, the parameters are 6 = 100 and Va = co. (a) Determine the Q-point values for both Q; and Q2. (b) Deter- ‘mine the overall small-signal voltage gain A, = v/v. (¢) Determine the input and output resistances Ry, and R,, ‘An ac equivalent ciscuit of a Darlington pair configuration is shown in Fig- ‘ure P6.79. The transistor parameters ate 6 = 120, = 80, Var = 80V, and Vq2=SOV. Determine the output resistance R, for (a) Lex = Tins = 1 mA; () Leo Lt fo BA; and (c) [ey = 2mA, Apago PDF Enhancer AC ground Figure P6.79 6.10 Power Considerations Consider the circuit in Figure 6.31. The circuit and transistor parameters are given in Exercise Bx 6.5. (a) Determine the average power dissipated in the tansistor, Rc, and Ry for v,=0. (b) Repeat part (a) for vy, = 100sinot (mV). Consider the circuit shown in Figure 6.38. The transistor parameters are given in Exercise Ex 6.7. (a) Calculate the average power dissipated in the transistor, Re, and Ry for v, = 0. (b) Determine the maximum undistorted signal power that can be delivered to Re for the condition that ic > 0 and 05 < vee =9V. 487468 Part Semiconductor Devices and Basic Applications 682 683 684 For the circuit shown in Figure 6.43, use the eireuit and transistor parame- ters described in Example 6.9. (a) Calculate the average power dissipated in the transistor, Rg, and Re, for v, = 0. (b) Determine the maximum sig- nal power that can be delivered to Ry. What are the signal powers dissipated in Re and Rc, and what is the average power dissipated in the transistor in this case? For the circuit shown in Figure 6.57, the transistor parameters are = 100 and V4 = 100 V, and the source resistor is Rs = 0. Determine the maxi- mum undistorted signal power that can be delivered to Ry if: (a) Ry TR, and (b) Ry = 109. Consider the citeuit shown in Figure 6.64 with parameters given in Exer- cise TYU 6.14. (a) Calculate the average power dissipated in the transistor and Rc, for v, = 0. (b) Determine the maximum undistorted signal power that can be delivered to Kz, and the resulting average power dissipated in the transistor and Re eS COMPUTER SIMULATION PROBLEMS 685 686 687 688 (2) Using a computer simulation, verify the results of Bxercise Ex 65. (b) Repeat part (a) for Barly voltages of (i) V4 = 100 V and (it) Vi, = SOY. (@) Using a computer simulation, verify the results of Exercise TYU 617. (b) Repeat part (a) for an Barly voltage of V = SOV. Using a computer simulation, verify the resulls of Example 6.10. ABHge PRE ERMAN sults of Exercise Bx 6.15 for the fo DESIGN PROBLEMS (Note: Bach design should be correlated with a computer simulation, ] D889 *Ds.90 “D591 D892 Design a common-emilter amplifier with the general configuration shown in Figure 6.39 except with a pnp transistor. The magnitude of the small-signal voltage gain should be |Ay| = 50 while driving a load Ry, = 10k®, Bias the circuit at 13.3 V. Consider the circuit in Figure 6.20. Let Voc = SV, Rr = 10k2, 6 = 120, and V4 = co. Design the circuit such that the small-signal current gain is ‘A; = 20 and such that the maximum undistorted swing in the output volt- age is achieved, A microphone puts out a peak voltage of 2 mV and has an output resistance of 5 k®. Design an amplifier system to drive a 24 92 speaker, producing 0.5 W of signal power. Assume a current gain of f° = 50 for all available transistors, Specify the current and power ratings of the transistors Redesign the two-stage amplifier in Figure 6.66 such that the voltage gain of each stage is Ayy = Ayz = —S0. Assume transistor current gains of Papo = 150 and fgcy = 110, The total power dissipated in the circuit should bbe limited to 25 mW,