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ON Semiconductor

General Purpose Transistor
NPN Silicon MPS3904

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc 1
2
3
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW CASE 29–04, STYLE 1
Derate above 25°C 5.0 mW/°C TO–92 (TO–226AA)
Total Power Dissipation @ TA = 60°C PD 450 mW
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C COLLECTOR
Operating and Storage Junction TJ, Tstg –55 to +150 °C 3
Temperature Range
2
THERMAL CHARACTERISTICS
BASE
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W 1
Thermal Resistance, Junction to Case RJC 83.3 °C/W EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO 60 — Vdc
(IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current ICEX — 50 nAdc
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
Base Cutoff Current IBL — 50 nAdc
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:
November, 2001 – Rev. 3 MPS3904/D

1 mAdc.0 pF* CS < 4.0 Vdc) 70 — (IC = 10 mAdc. RS = 1. IB = 5.3 Base–Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc. VCE = 5.0 mAdc) 0.0 MHz) Input Impedance hie 1.0 Vdc) 30 — Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc.0 mAdc.0 pF* -9. VCE = 1.0 ns CS < 4. IC = 10 mAdc. ts — 900 ns Fall Time IB1 = IB2 = 1. f = 1.1 V 1N916 <1.0 V +3. Pulse Test: Pulse Width ≤ 300 s.0 X 10–4 (IC = 1. f = 1.5 Vdc.0 Vdc) 40 — (IC = 1.0 Vdc.2 (IC = 50 mAdc. VCE = 1.0 pF (VCB = 5.0 pF (VEB = 0.0 mAdc) — 1. td — 35 ns Rise Time IC = 10 mAdc.0 kHz) SWITCHING CHARACTERISTICS Delay Time (VCC = 3. IE = 0.0%.0 mAdc. VCE = 1.0 kHz) Noise Figure NF — 5. IB = 1. VBE(off) = –0. VCE = 1.0 Vdc.0 mAdc. f = 1.0 kHz) Small–Signal Current Gain hfe 100 400 — (IC = 1. f = 1. Turn–Off Time http://onsemi. Turn–On Time Figure 2. f = 1.0 dB (IC = 100 µAdc.com 2 . VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc. f = 100 MHz) Output Capacitance Cobo — 4.0 kΩ.0 mAdc) tf — 90 ns 1.5 8.0 MHz) Input Capacitance Cibo — 8. Duty Cycle ≤ 2.0 mAdc) — 0. IC = 0.9 V DUTY CYCLE = 2% DUTY CYCLE = 2% 10 k 10 k -0.5 0.0 40 µmhos (IC = 1.0 Vdc) 60 — (IC = 100 mAdc. MPS3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain hFE — (IC = 0. VCE = 20 Vdc.0 10 kΩ (IC = 1. VCE = 10 Vdc.0 kHz) Output Admittance hoe 1.0 mAdc) — 0.0 V 10 < t1 < 500 µs t1 300 ns 275 +10.0 ns *Total shunt capacitance of test jig and connectors Figure 1.5 V 0 <1.5 Vdc.0 kHz) Voltage Feedback Ratio hre 0. f = 1. IB = 5.0 Vdc. VCE = 10 Vdc.0 mAdc.0 mAdc) tr — 50 ns Storage Time (VCC = 3. EQUIVALENT SWITCHING TIME TEST CIRCUITS +3. IB = 1.1 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT 300 — MHz (IC = 10 mAdc.85 (IC = 50 mAdc.0 mAdc. f = 1. VCE = 10 Vdc. IB1 = 1. VCE = 10 Vdc.65 0.9 V 275 +10.0 Vdc.

0 Hz 500k BANDWIDTH = 1. MPS3904 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 dB 1.0 Hz BANDWIDTH = 1. (Figure 3) 2k 2.0 5.0 dB 100 50 10 20 30 50 70 100 200 300 500 700 1k IC. TA = 25°C) 500k 1M 200k BANDWIDTH = 1. 100 Hz Figure 6. Narrow Band.0 dB 200 RS = Source Resistance (Ohms) 8.0 dB In = Noise Current of the Transistor referred to the input.0 dB 6.0 dB 500 10 dB 1k 500 5. COLLECTOR CURRENT (µA) Figure 7.7 kHz 200k RS . SOURCE RESISTANCE (OHMS) RS . NOISE VOLTAGE (nV) In. Noise Voltage Figure 4.0 10 µA 30 µA 0.com 3 . COLLECTOR CURRENT (µA) Figure 5.0 dB 2k 5k 3.0 dB 200 100 200 8. Wideband http://onsemi.0 dB en = Noise Voltage of the Transistor referred to the input.38 x 10–23 j/°K) 500 T = Temperature of the Source Resistance (°K) 5. NOISE CURRENT (pA) 10 10 100 µA 7.0 100 µA 2.0 mA RS ≈ ∞ 300 µA 20 300 µA en. FREQUENCY (Hz) f. TA = 25°C) 20 100 IC = 1.0 dB 4.0 dB 50 100 10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k IC. Noise Current NOISE FIGURE CONTOURS (VCE = 5.2 10 µA 2.0 dB 1k 2k 2. SOURCE RESISTANCE (OHMS) 100k 200k 50k 100k 20k 50k 10k 20k 5k 10k 2. SOURCE RESISTANCE (OHMS) 100k 50k Noise Figure is defined as: 20k 10k NF  20 log10 en2  4KTR S  In RS  4KTRS 2 2 12 5k 1.0 Vdc.0 dB K = Boltzman’s Constant (1.0 5.0 kHz 500k 10 Hz to 15. 1. COLLECTOR CURRENT (µA) IC.0 0.0 mA BANDWIDTH = 1.1 10 20 50 100 200 500 1k 2k 5k 10k 10 20 50 100 200 500 1k 2k 5k 10k f.0 Vdc.0 Hz 50 RS = 0 IC = 1.0 dB 3. Narrow Band.5 30 µA 3.0 0.0 Hz RS . FREQUENCY (Hz) Figure 3.0 1. (Figure 4) 1k 3.

COLLECTOR CURRENT (mA) Figure 11. DC Current Gain 1.0 5. VOLTAGE (VOLTS) 1.0 3. COLLECTOR CURRENT (mA) Figure 8.0 5. DC CURRENT GAIN 200 25°C -55°C 100 80 MPS3904 60 VCE = 1.2 20 0 0 0.1 0.0 10 20 50 100 0. Collector Saturation Region Figure 10.006 0.6 0. COLLECTOR CURRENT (mA) 0.7 1.0 2. BASE CURRENT (mA) VCE. Temperature Coefficients http://onsemi.3 0.8 25°C to 125°C V.5 0.01 0. COLLECTOR CURRENT (mA) IC. Collector Characteristics 1.0 10 20 50 100 IC.07 0. TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.01 0.05 0.5 1.0 2.4 0.1 0.0 7.8 80 DUTY CYCLE ≤ 2.4 40 100 µA 0.com 4 .002 0.05 0.0 100 VCE .5 1.2 VB for VBE -55°C to 25°C VCE(sat) @ IC/IB = 10 0 -2.1 0.0 V VCE = 10 V 40 0.005 0.0% 400 µA IC = 1.8 VBE(on) @ VCE = 1.1 0. “On” Voltages Figure 12.6 *APPLIES for IC/IB ≤ hFE/2 θV.4 25°C to 125°C -1.2 0.0 10 15 20 25 30 35 40 IB. COLLECTOR-EMITTER VOLTAGE (VOLTS) MPS3904 TA = 25°C IB = 500 µA TJ = 25°C PULSE WIDTH = 300 µs IC.2 0.2 0.03 0.0 2.8 VBE(sat) @ IC/IB = 10 -55°C to 25°C 0.02 0.6 -0.6 60 200 µA 0.0 2.0 *VC for VCE(sat) 0 0. MPS3904 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C h FE.0 10 20 0 5.0 5.0 mA 10 mA 50 mA 100 mA 300 µA 0.2 0.02 0.0 5. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9.5 1.0 V 0.0 10 20 30 50 70 100 IC.2 0.4 1.004 0.

0 kHz MPS3904 TA = 25°C TA = 25°C hie .5 1. TIME (ns) 30 tr 100 tf 20 70 td @ VBE(off) = 0.0 0.0 2. TIME (ns) t.1 0.3 3.0 10 20 50 100 0.0 10 20 30 50 70 100 IC.7 1.0 hfe ≈ 200 @ IC = 1.0 7.0 0.0 f = 1. Turn–On Time Figure 14.0 TJ = 25°C 3. COLLECTOR CURRENT (mA) Figure 13.0 2.0 IC/IB = 10 20 IB1 = IB2 5. REVERSE VOLTAGE (VOLTS) Figure 15.0 10 0.0 mA 2. COLLECTOR CURRENT (mA) VR.0 C.0 10 20 50 100 IC.0 V Cob 3.0 3.7 7. Current–Gain — Bandwidth Product Figure 16. COLLECTOR CURRENT (mA) Figure 17.5 Vdc 50 10 30 VCC = 3. Capacitance 20 200 VCE = 10 Vdc VCE = 10 Vdc hoe.5 1. Turn–Off Time T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 500 10 TJ = 25°C TJ = 25°C f = 100 MHz 7.5 5.0 2.0 5. COLLECTOR CURRENT (mA) IC.0 10 20 30 50 0.0 0.0 10 20 50 IC.0 5.0 mA 70 5.0 100 2.2 0.0 5.0 5.0 7.0 2. 0.0 3.05 0.0 5.2 2. Output Admittance http://onsemi.0 7.5 1.0 MHz 300 VCE = 20 V Cib 5. OUTPUT ADMITTANCE ( mhos) 10 f = 1.1 0.com 5 .0 3.0 0.0 30 hfe ≈ 200 @ IC = 1. Input Impedance Figure 18.0 2. CAPACITANCE (pF) 200 5.2 0.0 f. MPS3904 TYPICAL DYNAMIC CHARACTERISTICS 300 1000 200 VCC = 3. COLLECTOR CURRENT (mA) IC.0 10 1.0 70 50 1.2 0.0 10 20 30 50 70 100 1.0 V 700 IC/IB = 10 500 TJ = 25°C ts 100 300 70 200 50 t.1 0.0 20 1.0 50 MPS3904 3.5 0.0 2. INPUT IMPEDANCE (k Ω ) 7.0 kHz 100 f = 1.0 V 7.0 5.

TIME (ms) Figure 19.02 ZJA(t) = r(t)  RJA 0. available from the Literature Distribu- tion Center or on our website at www. ∆T = r(t) x P(pk) x RθJA = 0. For more information.2.2 (NORMALIZED) 0.2) -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 Using Figure 19 at a pulse width of 1.0 Vdc 10-1 The MPS3904 is dissipating 2.07 0.0 4. 6. see ON Semiconductor Applica- tion Note AN569/D.05 0.1 0.0 r(t) TRANSIENT THERMAL RESISTANCE 0. COLLECTOR CURRENT (mA) 10 µs Collector load lines for specific circuits must fall below the 100 TC = 25°C 1.0k 10k 20k 50k 100k t.01 0.0 ms of the transistor that must be observed for reliable operation. TC or 60 TA = 25°C TA is variable depending upon conditions.02 0.0 SECOND BREAKDOWN LIMIT 4.01 0.0 2.0 2.0 10 20 50 100 200 500 1. JUNCTION TEMPERATURE (°C) reading of r(t) is 0.0k 2.01 SINGLE PULSE t2 0. MPS3904 1.5 0. 200 IC.0 6.0 ms. thermal limitations will reduce the 10 CURRENT LIMIT power that can be handled to values less than the limitations THERMAL LIMIT imposed by second breakdown.com.03 t1 TJ(pk) – TA = P(pk) ZJA(t) 0.onsemi.02 0.7 D = 0. To find ZθJA(t). The peak rise in junction temperature is therefore Figure 21. 400 100 µs The safe operating area curves indicate IC–VCE limits 1.2 0.0 ms and D = 0. AND Example: ICEX @ VBE(off) = 3.0 10 20 40 VCE. multiply the value obtained from Figure 100 ICBO 19 by the steady state value RθJA. Using the model and the 102 ICEO device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various 101 duty cycles. (D = 0. dc The data of Figure 22 is based upon TJ(pk) = 150°C. COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 22.05 P(pk) PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) 0.2 0. the TJ.5 0.com 6 .22 x 2. Pulse curves are 40 dc valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. At high case or ambient temperatures.22.0 watts peak under the follow- ing conditions: 10-2 t1 = 1.0 8.1 FIGURE 20 0.0 ms.05 DUTY CYCLE. COLLECTOR CURRENT (nA) the model as shown in Figure 20.3 0.0 x 200 = 88°C. http://onsemi. D = t1/t2 D CURVES APPLY FOR POWER 0. TJ(pk) 20 TJ = 150°C may be calculated from the data in Figure 19.0k 5. t2 = 5. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA VCC = 30 Vdc 103 A train of periodical power pulses can be represented by IC.1 0.0 s limits indicated by the applicable curve.5 1.0 5.

2.170 0.15 1.48 G G 0.54 R 0.020 0.04 2.250 --.18 4.080 0. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. 6.105 2.100 --.210 4.66 1 N P --.93 --- N V 0.016 0. B 2. BASE 3.41 0. 3. 3.5M. DIMENSION D AND J APPLY BETWEEN L AND K P MINIMUM. DIMENSION F APPLIES BETWEEN P AND L.66 SECTION X–X J 0.43 --- STYLE 1: PIN 1. 0. COLLECTOR http://onsemi.115 --.50 V C K 0. R 4.205 4.32 5.33 C 0.015 0.500 --. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. CONTROLLING DIMENSION: INCH.135 --. L SEATING F PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.045 0.022 0. MPS3904 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD NOTES: 1.19 J D 0.165 3.42 2.125 0.45 5.55 X X F 0.105 2. 2.20 D B 0.41 0.70 --- L 0.016 0. DIMENSIONING AND TOLERANCING PER ANSI A Y14. 1982.055 1.175 0.com 7 .019 0.39 0.095 0. 12.39 H H 0.35 --- N 0. EMITTER 2.

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