Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector Current IC 6 A Collector Current (Peak) IC 16 A Collector Dissipation (T C=25&) PC 60 W Junction Temperature TJ 150 & 1.Base 2.Collector 3.Emitter Storage Temperature T STG -50 ~ 150 &
ELECTRICAL CHARACTERISTICS (T C=25&)
Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 200 mA DC Current Gain hFE 1 VCE = 5V, IC = 1A 10 30 - hFE 2 VCE = 5V, IC = 3A 5 15 Collector Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A 2 5 V Base Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A 1.5 V Current Gain Bandwidth Product fT VCE = 10V, IC = 1A 3 MHz Damper Diode Turn On Voltage VF IF = 6A 2 V Fall Time tF IC = 4A, IB1 = 0.8A 0.4 uS IB2 = - 1.6A, VCC = 200V RL = 50 Î NPN TRIPLE DIFFUSED KSD5072 PLANAR SILICON TRANSISTOR NPN TRIPLE DIFFUSED KSD5072 PLANAR SILICON TRANSISTOR