ON Semiconductor High-Power NPN Transistors

ON Semiconductor
High-Power NPN Silicon 2N6338

Transistors 2N6341*
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
• High Collector–Emitter Sustaining Voltage –
*ON Semiconductor Preferred Device
VCEO(sus) = 100 Vdc (Min) – 2N6338
= 150 Vdc (Min) – 2N6341 25 AMPERE
• High DC Current Gain – POWER TRANSISTORS
hFE = 30 – 120 @ IC = 10 Adc NPN SILICON
= 12 (Min) @ IC = 25 Adc 100, 120, 140, 150 VOLTS
200 WATTS
• Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 ms (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ts = 1.0 ms (Max)
tf = 0.25 ms (Max)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Rating Symbol 2N6338 2N6341 Unit CASE 1–07
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
TO–204AA
Collector–Base Voltage VCB 120 180 Vdc
(TO–3)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
Collector–Emitter Voltage VCEO 100 150 Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter–Base Voltage VEB 6.0 Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Current IC Adc
Continuous 25
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Peak 50
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base Current IB 10 Adc
Total Device Dissipation PD
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
@ TC = 25C
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ ÎÎÎ
Derate above 25C
ÎÎÎ
Operating and Storage Junction TJ, Tstg
200
1.14
–65 to +200
Watts
W/°C
C
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θJC 0.875 C/W
*Indicates JEDEC Registered Data.
200
175
PD, POWER DISSIPATION (WATTS)
150
125
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

May, 2001 – Rev. 10 2N6338/D
2N6338 2N6341
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector–Emitter Sustaining Voltage (1) 2N6338 VCEO(sus) 100 – Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 50 mAdc, IB = 0) 2N6341 150 –
µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEO
(VCE = 50 Vdc, IB = 0) 2N6338 – 50
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 75 Vdc, IB = 0) 2N6341 – 50
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current ICEX
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc) – 10 µAdc
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150C) – 1.0 mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ICBO
IEBO
–
–
10
100
µAdc
µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain) hFE –
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 2.0 Vdc) 50 –
(IC = 10 Adc, VCE = 2.0 Vdc) 30 120
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 25 Adc, VCE = 2.0 Vdc) 12 –
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Emitter Saturation Voltage VCE(sat) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, IB = 1.0 Adc) – 1.0
(IC = 25 Adc, IB = 2.5 Adc) – 1.8
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Base–Emitter Saturation Voltage
ÎÎÎÎ
ÎÎÎ
(IC = 10 Adc, IB = 1.0 Adc)
VBE(sat)
– 1.8
Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 25 Adc, IB = 2.5 Adc) – 2.5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) – 1.8 Vdc
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current–Gain – Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
fT
Cob
40
–
–
300
MHz
pF
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) tr – 0.3 µs
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts – 1.0 µs
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) tf – 0.25 µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest.
VCC 1000
700
+ 80 V VCC = 80 V
500
RC IC/IB = 10
8.0 OHMS td @ VBE(off) = 6.0 V TJ = 25°C
300
10 µs RB SCOPE 200
t, TIME (ns)
+ 11 V 10 OHMS
0 100 tr
70
1N4933
- 9.0 V 50
tr, tf 10 ns 30
- 5.0 V
DUTY CYCLE = 1.0%
20
NOTE: For information on Figures 3 and 6, RB and RC were 10

varied to obtain desired test conditions. 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time
http://onsemi.com
2
2N6338 2N6341
1.0
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t), EFFECTIVE TRANSIENT
0.3 0.2
0.2
0.1 P(pk)
0.1 θJC = r(t) θJC
0.05 θJC = 0.875°C/W MAX
0.07 0.02
0.05 D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.03 0.01 t2 READ TIME AT t1
0.02 SINGLE PULSE TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response
100 There are two limitations on the power handling ability of

50 a transistor: average junction temperature and second
200 µs
IC, COLLECTOR CURRENT (AMP)
20 breakdown. Safe operating area curves indicate IC–VCE

10 1.0 ms limits of the transistor that must be observed for reliable
dc
5.0 5.0 ms operation; i.e., the transistor must not be subjected to greater
2.0 TJ = 200°C dissipation than the curves indicate.
1.0 BONDING WIRE LIMITED The data of Figure 5 is based on TJ(pk) = 200C; TC is
0.5 THERMALLY LIMITED @ variable depending on conditions. Second breakdown pulse
0.2 TC = 25°C (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk)
SECOND BREAKDOWN
0.1 200C. TJ(pk) may be calculated from the data in
LIMITED CURVES APPLY 2N6338
0.05 Figure 4. At high case temperatures, thermal limitations will
BELOW RATED VCEO 2N6341
0.02 reduce the power that can be handled to values less than the
0.01 limitations imposed by second breakdown.
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
5.0 5000
3.0 VCC = 80 V 3000 TJ = 25°C
ts IB1 = IB2 Cib
2.0 2000
IC/IB = 10
C, CAPACITANCE (pF)
TJ = 25°C
1.0 1000
t, TIME (s)
0.7 700
µ
0.5 500
0.3 300
0.2 tf 200 Cob
0.1 100
0.07 70
0.05 50
0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn–Off Time Figure 7. Capacitance
http://onsemi.com
3
2N6338 2N6341
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
–T– SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO-204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B --- 1.050 --- 26.67
L –Y–
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
–Q– N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: CENTRAL/SOUTH AMERICA:
Literature Distribution Center for ON Semiconductor Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
P.O. Box 5163, Denver, Colorado 80217 USA Email: ONlit–spanish@hibbertco.com
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada then Dial 866–297–9322
Email: ONlit@hibbertco.com
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
N. American Technical Support: 800–282–9855 Toll Free USA/Canada Toll Free from Hong Kong & Singapore:
001–800–4422–3781
EUROPE: LDC for ON Semiconductor – European Support Email: ONlit–asia@hibbertco.com
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Email: ONlit–french@hibbertco.com Phone: 81–3–5740–2700
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: r14525@onsemi.com
Email: ONlit@hibbertco.com ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 For additional information, please contact your local
*Available from Germany, France, Italy, UK, Ireland Sales Representative.
http://onsemi.com 2N6338/D
4

ON Semiconductor High-Power NPN Transistors

Cargado por

Información del documento

Descripción original:

Título original

Derechos de autor

Formatos disponibles

Compartir este documento

Compartir o incrustar documentos

Opciones para compartir

¿Le pareció útil este documento?

¿Este contenido es inapropiado?

Copyright:

Formatos disponibles

ON Semiconductor High-Power NPN Transistors

Cargado por

Copyright:

Formatos disponibles

ON Semiconductor

High-Power NPN Silicon 2N6338

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

NOTE: For information on Figures 3 and 6, RB and RC were 10

Figure 2. Switching Time Test Circuit Figure 3. Turn–On Time

THERMAL RESISTANCE (NORMALIZED)

100 There are two limitations on the power handling ability of

20 breakdown. Safe operating area curves indicate IC–VCE

Figure 6. Turn–Off Time Figure 7. Capacitance

PUBLICATION ORDERING INFORMATION

También podría gustarte