DATA SHEET Introduction Guide to the SSTP 2515200 Data Sheet USER’S GUIDE The purpose of this section is to give additional background informa tion about measurement conditions for the data sheets of Section 6. The meaning of parameters and ratings will be explained and illus trated by figures where appropriate Parameters and figures in this section will be discussed in the same sequence as that in which they appear in the data sheets. For illustra- tions and examples of calculation. the figures and values of the 5STP 2515200 phase control thyristor have been used. Other devices have similar data sheet layouts (though some lower power devices have less detailed specifications). This guide is therefore applicable to all the PCT data sheets of Section 6 All references to figures apply to figures in this section. unless other- wise noted. In the case where figures have been derived from the data sheet of the 5STP 2515200, it has been noted in the corresponding legend General Note Unless explicitly mentioned in the conditions, all data given in the data sheets are valid over the entire operating temperature range of —40°C 10 125°C eo Cwos vl Phase Control Thyristor int & 5STP 25L5200 The key parameters roughly identify the PCT through it's main data without reference to operating conditions. Alll figures given herein ap- pear also in the appropriate section of the data sheet, together with all relevant conditions, For example. /rsy4 = 420004 can also be found in the on-state section. and it can be seen that this value applies to ty = 1Oms and Ty = 125°C.ABB Semiconductors AG Section3 Features «Patented free-floating silicon technology # Designed for traction, energy and industrial applications ‘© Optimum power handling capability interdigitated amplifying gate The features high-light salient technological aspects of the device. Detailed information about PCT design and technology is given in Section 2. "Product Design”. earlier in this data book. The following is a brief explanation of some features that are common to most PCTs. Patented Free-Floating Silicon Technology Free-floating silicon technology refers to a silicon wafer which is not alloyed to the adjacent molybdenum disks inside the press pack hous- ing. Thus, electrical and thermal contacts are realised by extemal mounting force only. The advantage of this technology to the user is that cost-effective, modern wafer manufacturing processes can be used which allow an optimal trade-off between static and dynamic parameters. Also, process variations and therefore parameter fluctua tions can be kept in smaller limits, compared to alloyed waters. See also Section 2, “Product Design’ Designed for Traction, Energy and Industrial Applications Each of the above applications makes its special demands of the semiconductor component. ABB has supplied tens of thousands of PCTs into all of these segments, leading to a unique experience in design requirements, Excellent statistical field data revealing excep- tionally low failure rates underline the fact that PCTs from ABB Semi- conductors ensure reliable operation over the expected life-cycles of locomotives, HVDC valves, SVC stations and industrial equipment, which are usually measured in decades. Optimum Power Handling Capability The physics of semiconductors requires that a thyristor’s characteristics be compromised in their static and dynamic performance. In the design of standard products described in this book, special care is taken in achieving an optimal trade-off between static (on-state) and dynamic (switching) parameters for the majority of applications. For special cases, e.g. switching at higher frequencies, ABB Semiconductors can provide different trade-offs on request. Such a product is then called an adapted standard (see Section 1, “Product Introduction and Logistics” for more information). Section 5, “Application Aspects’, shows an example of a set of parameter combinations demonstrating the dif ference between a standard and an adapted standard product Interdigitated Amplifying Gate The amplifying gate allows even the largest thyristors to be triggered with a low external gate current. This is achieved by integrated gate current amplification and allows the user to trigger all ABB Semicon ductors’ PCTs with the same gate unit. Interdigitated means that the gate structure is distributed over the whole thyristor area thus accel- erating the spread of the conducting regions during turn-on. This re duces turn-on losses and allows higher di/dt ratings as compared to simple central gate structures. The interdigitated amplifying gate is also described in Section 2, “Product Design $3.2ABB Semiconductors AG Section3 Blocking Partnumber] SSTP 28.8200 | STP 2515000 | SSTP 2514800 | Condlions Ta ea | ee Yi we Geo] Vora Vara “44000 a200V.~~*«MOOOVS~*C = SO, 1, = tOms Vaso S700V ‘5500V S100 | fe= Sms, single pulse tos <400mA low Tt | in 00 ma Vasu | Ta= 125°6 ee 200i @Ep100872Vom| emu are 0 Vaasa vous upO TVET Some of the blocking ratings are illustrated by the following figure " Vir) [x er Fig.1 Example of a possible anode voltage and current waveform A. Repetitive over-vollages. caused by the thyristor itself during its reverse recovery S- Surge {non-repetitve] over-voltages. caused by external events For @ safe operation. the following conditions must apply Vos < Vost Vas < Vasu Vor < Vorw. Van < Vas