Automotive Devices PDF

SANKEN ELECTRIC CO.,LTD.
CAUTION / WARNING
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occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
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fires or damages to the society due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
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Contents
Examples of Use of Typical Products by Application .............. 2
1 ICs
1-1. Regulator ICs
Application Note ................................................................................ 7
Dropper Type Regulator ICs ......................................................... 8
Dropper Type System Regulator ICs ...................................... 16
Switching Type Regulator ICs ................................................... 22
1-2. Power Switch ICs

High-side Power Switch ICs ...................................................... 24
Low-side Switch ICs ...................................................... 50
1-3. Motor Driver ICs

Stepper-motor Driver ICs ............................................................ 56
DC Motor Driver ICs ...................................................................... 60
1-4. HID Lamp Driver ICs ..................................................................... 64
1-5. Custom ICs ....................................................................................... 76
2 Discretes
2-1. Transistors
2-1-1. Transistors ............................................................................ 80
2-1-2. Transistor Arrays ............................................................... 96
2-2. MOS FETs

2-2-1. MOS FETs ......................................................................... 108
2-2-2. MOS FET Arrays ............................................................. 117
2-3. Thyristors
2-3-1. Reverse Conducting Thyristors .............................. 125
2-4. Diodes
2-4-1. Alternator Diodes ........................................................... 127
2-4-2. High-voltage Diodes for Igniter ................................ 128
2-4-3. Power Zener Diodes ..................................................... 129
2-4-4. General-purpose Diodes ............................................ 130
3 LEDs
3-1. Uni-Color LED Lamps ................................................................ 134
3-2. Bi-Color LED Lamps .................................................................. 137
3-3. Surface Mount LEDs .................................................................. 138
3-4. Infrared LEDs .................................................................................. 140

3-5. Ultraviolet LEDs ............................................................................ 141
3-6. Multi-chip Modules .................................................................... 142
Part Number Index in Alphanumeric Order ......................................... 147
1
Examples of Use of Typical Products by Application
Throttle System
•DC Motor Driver ICs (p.60 and after)
Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.
SI-5300 / SPF7301
•Motor Driver Transistor Arrays (p.99)
H-bridge of NPN x 2 and PNP x 2 in a single package.
With integrated back emf. clamp diode.
Alternators SLA8004
•Diodes (p.127) •Motor driver power transistors (p.68 and after)

With integrated back emf. clamp diode.
Solder and press fit type as well as Zener type is available.
2SA1568 / 2SC4065
SG-9 / SG-10 / SG-14
•Regulator ICs
Custom-made (contact our sales reps.)
Fuel Injectors
•Injector transistors (p.84 and after)
Transistors and MOS FETs are available in discretes and arrays in
various packages.
2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C /
STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103
Headlamps
•HID lamp driver ICs (p.64 and after)
High-voltage controller IC and 4-circuit power stage in a
single package.
Direct drive from CPU.
SLA2402M / SLA2403M / SMA2409M
•Thyristors for HID lamp ignition (p.125 and after)
Best suited to C-discharge SW element on high-voltage
primary side of an igniter.
Integrates a reverse direction diode. Ignition System
High di/dt resistance
TFC561D / TFC562D •High-voltage diodes for ignition (p.128)
•MOS FET arrays for driving HID lamps (p.122)
4 circuits of N-ch MOS FETs of 450V/7A in a single package.
Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN
SMA5113 •2SD2141 / MN638S
Ignition transistors (p.89 and after)
•2-ph stepper-motor driver ICs for AFS (p.58 and after)
Low output saturation voltage, integrated recovery diode,
surface-mount.
•Ignition ICs
Custom-made (contact our sales reps.)
SPF7211
2
Room Lamp
•Multi-chip LED modules (p.142)
Car Navigation and Audio
Power Steering
•Various LEDs (p.133)
•Motor driver MOS FETs (p.108 and after)
Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.
2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 /
2SK3801 / 2SK3803 / 2SK3851
Tail Lamps
•Power LED
Custom-made
(contact our sales reps.)
O2 sensor heater
•Heater driver MOS FETs (p.115)
Low ON resistor and integral gate protection
diode.
FKV460S
Transmission ABS and VDC

•AT solenoid drivers (high-side power switch ICs) (p.26 and after)
Integral diagnostic function, surface-mount, 2- and 3-circuit types and other
•Solenoid/motor driver MOS FETs (p.108 and after)
Various packages from discretes to arrays.
diverse models. 2SK3710 / FKV660S / SLA5027 / SDK08
SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M •Solenoid/motor driver ICs (p.54)
•Integral current detection resistor, current monitor output, surface-mount and
AT linear solenoid driver (high-side power switch ICs) (p.46 and after) Surface-mount 4-circuit type with output voltage monitor.
SPF5012
2-circuit types are also available.
SPF5017 / SPF5018
3
4
1 ICs
1-1. Regulator ICs 1-3. Motor Driver ICs
.............................................. .........................
Application Note 7 Stepper-motor Driver ICs 56
.................... ...................................
Dropper Type Regulator ICs 8 SLA4708M (50V, 1.5A) 56
SI-3001S (5V/1A, With Output ON/OFF Control) ... 8 SPF7211 (40V, 0.8A) ..................................... 58
SI-3003S (5V/0.8A, 3-terminal) ....................... 10 DC Motor Driver ICs .................................... 60

.....................................
SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12 SI-5300 (40V, 5A) 60
.....................................
SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14 SPF7301 (36V, 7A) 62
..
Dropper Type System Regulator ICs 16
SI-3322S (5V, Surface-mount) ........................ 16 1-4. HID Lamp Driver ICs

SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18 SLA2402M (500V, 15A) .................................. 64
SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20 SLA2403M (500V, 7A) .................................... 68
...............
Switching Type Regulator ICs 22 SMA2409M (500V, 7A) ................................... 72
............................................
SI-3201S (5V/3A) 22
1-5. Custom ICs ..................................... 76
1-2. Power Switch ICs

...................
High-side Power Switch ICs 24
SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SI-5151S (With Diagnostic Function) .............. 26
SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30
SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32
SLA2501M (With Diagnostic Function, 3-circuits) 36
SLA2502M (With Diagnostic Function, 4-circuits) 38
SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40
SPF5017 (Surface-mount 2-circuit, current monitor output function) 46
SPF5018 (Surface-mount, current monitor output function) 48
...................................
Low-side Switch ICs 50
..........
SPF5002A (Surface-mount 4-circuits) 50

SPF5012 (Surface-mount 4-circuits with Output Monitor) 54
5
6
Application Note for Regulator ICs
■ Temperature and Reliability

Reliability of an IC is generally heavily dependent on generally used. Moreover, the heat dissipation
operating temperature. Heat radiation must be fully capacity of a heatsink is heavily dependent on how
considered, and an ample margin should be given it is mounted. It is therefore important and
to the radiating area in designing heatsinks. When recommended to measure the heatsink and case
mounting ICs on heatsinks, always apply silicone temperature in actual operating environments.
grease and firmly tighten. Air convection should
actively be used in actual heat dissipation. The
reliability of capacitors and coils, the peripheral ■ Setting DC Input Voltage
components, is also closely related to temperature. Observe the following precautions when setting the
A high operating temperature may reduce the DC input voltage:
service life. Exceeding the allowable temperature • VIN (min) must be at least the set output voltage
may cause coils to be burned or capacitors to be plus dropout voltage for the dropper type. It must
damaged. Make sure that output smoothing coils be at least the recommended lowest input
and input/output capacitors do not exceed their voltage for the switching type.
allowable temperature limit in operation. We • V IN (max) must not exceed the DC input voltage of
recommend, in particular, to provide an ample the electrical characteristics.
margin for the ratings of coils to minimize heat
generation.
■ Screw Torque
■ Power Dissipation (PD) Screw torque should be between 0.588 to 0.686
[N • m] (6.0 to 7.0 [kgf • cm]).
1. Dropper Type
PD = IO • [VIN (mean) - VO]
■ Recommended silicone grease
2. Switching Type
V
Volatile type silicone grease may produce cracks
PD = VO • I O ( 100 - 1) - VF • IO (1 - O ) after elapse of long term, resulting in reducing heat
VIN
Efficiency depends on input/output conditions. radiation effect.
Silicone grease with low consistency (hard grease)
Refer to the efficiency characteristics.
may cause cracks in the mold resin when screwing
VO : Output voltage : Efficiency the product to a heatsink.
VIN : Input voltage VF : Diode forward voltage
IO : Output current Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.

■ Heatsink Design YG6260 GE Toshiba Silicones Co., Ltd.
The maximum junction temperature Tj (max) and the
maximum case temperature Tc (max) given in the SC102 Dow Corning Toray Silicone Co., Ltd.
absolute maximum ratings are specific to each
product type and must be strictly met. Thus,
heatsink design must be performed in consideration
of the condition of use which affects the maximum ■ Others
power dissipation PD (max) and the maximum This product may not be connected in parallel.
ambient temperature Ta (max). To facilitate heatsink The switching type may not be used for current
design, the relationship between these two boosting and stepping up voltage.
parameters is presented in the Ta-PD characteristic
graphs. Heatsink design must be performed in the
following steps:
1. Obtain the maximum ambient temperature Ta
(max) (within the set).
2. Obtain the maximum power dissipation P D
(max).
3. Identify the intersection on the Ta-PD charac-
teristic graph and obtain the size of the
heatsink to be used.
The size of a heatsink has been obtained. In actual
applications, a 10 to 20% derating factor is
7
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Features External Dimensions (unit: mm)

● Output current of 1.0A 3.2 ±0.2 4.2 ±0.2
● 5-terminal type <output on/off control, variable output voltage (rise only)> 10.0±0.2 2.8 ±0.2
0.5
● Voltage accuracy of ±2%
● Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A
4.0±0.2
7.9±0.2
● Built-in overcurrent, overvoltage and thermal protection circuits
● Withstands external electromagnetic noises
16.9±0.3
● TO220 equivalent full-mold package
(17.9)
a
2.6 ±0.1
b
(2.0)
Absolute Maximum Ratings
5.0 ±0.6
(Ta = 25ºC) 0.95±0.15
+0.2
Parameter Symbol Ratings Unit Conditions 0.85 – 0.1
(4.6)
(8.0)
DC Input Voltage VIN 35 V +0.2
–0.1
0.45
Output Control Terminal Voltage VC VIN V
P1.7±0.7• 4=6.8±0.7 3.9 ±0.7 (4.3)
Output Current IO 1.0 *
1
A 8.2 ±0.7
PD1 18 W With infinite heatsink

Power Dissipation 1. GND
PD2 1.5 W Stand-alone without heatsink 2. VC (on/off) a: Part No.
1 2 3 4 5 3. Vo b: Lot No.
Junction Temperature Tj – 40 to +125 ºC 4. Vosense
5. VIN
Operating Temperature TOP – 40 to +100 ºC
Storage Temperature Tstg – 40 to +125 ºC (Forming No. 1101)
Junction to Case Thermal

j-c 5.5 ºC/W
Resistance
Junction to Ambient-Air Thermal

j-a 66.7 ºC/W Stand-alone without heatsink
Resistance Equivalent Circuit Diagram
Tr1
5 3
VIN VO
R1 MIC
4
Electrical Characteristics VO sense
( Tj= 25ºC, VIN =14V unless otherwise specified) R3
a
Ratings
Parameter Symbol Unit Conditions
min typ max e f
d R4
Input Voltage VIN 6 *2 30 *1 V b
2
Vc c g
Output Voltage VO 4.90 5.00 5.10 V VIN =12 to 16V, IO = 0.4A (on/off)
R2
0.5 V IO 0.4A
Dropout Voltage VDIF
1.0 V IO 1.0A
1
a : Pre-regulator e : Drive circuit
Line Regulation ∆VO LINE 30 mV IO =0.4A, VIN = 6 to 16V GND
b : Output ON/OFF control f : Error amplifier
∆VO LOAD 100 mV IO = 0 to 0.4A c : Thermal protection g : Reference voltage
Load Regulation
d : Over-input and overcurrent protection
Output Voltage Temperature
∆VO /∆T ±0.5 mV/ºC IO =5mA, Ta = –10 to +100ºC
Coefficient
Ripple Rejection RREJ 54 dB f =100 to 120Hz Standard Circuit Diagram

Quiescent Circuit Current Iq 3 10 mA IO = 0A
Overcurrent Protection Starting D1

3
I S1 1.2 * A
Current
4
Output ON VC, IH 2.0 * V 5 3
Vc Terminal
Control Voltage OPEN SI-3001S

Output OFF VC, IL 0.8 V 2 4
DC input + + DC output
Output ON I C, IH 20 µA VC = 2.7V C2 1 CO
VIN C1 VO
Control Current
Output OFF I C, IL – 0.3 mA VC = 0.4V
Notes:
*1. Since PD (max) = ( VIN – VO) • IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Co : Output capacitor (47 to 100µF, 50V)
Ta -PD curve to compute the corresponding values. C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
*2. Refer to the dropout voltage. These are required for inductive input lines or long wiring.
*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%. Tantalum capacitors are recommended for C1 and Co,
*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, especially at low temperatures.
LS-TTL direct driving is also possible. D1 : Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
8
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Electrical Characteristics
■ Io vs VDIF Characteristicsc ■ Line Regulation ■ Load Regulation

0.5 5.1 5.1
IO = V IN =
0.4
Dropout voltage VDIF (V)
0 (A) 30 ( V)
Output voltage VO (V)

0.4 (A) 12 to 16 ( V)
0.3 1.0 (A) 5.5 ( V)
5.0 5.0
0.2
0.1
4.9 4.9
0 0 0
0 0.5 1.0 0 5 10 15 20 25 30 0 0.5 1.0
Output current IO (A) Input voltage VIN (V) Output current IO (A)
■ Output Voltage Temperature Characteristics ■ Rise Characteristics ■ Quiescent Circuit Current

5.1 7 15
Io = 0 (A)
6
Quiescent current lq (mA)

Load resistance
VIN =
5
30(V) 10
16(V) 12(V)
4
5.0
3
14(V)
VIN — IOUT condition 12 (Ω) 5
5.5(V) 5.5 (V) / 1.0 (A) 2
12 (V) / 0.4 (A)
14 (V) / 0.4 (A)
16 (V) / 0.4 (A) 5 (Ω)
30 (V) / 0 (A) 1
4.9
0 0 0
--50 0 50 100 150 0 2 4 6 8 10 0 2 4 6 8 10
Ambient temperature Ta (ºC) Input voltage VIN (V) Input voltage VIN (V)
■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics ■ Thermal Protection Characteristics

6 6 6
I o = 0 (A) Io = 0 (A)
VIN = 14 (V) VIN = 6 (V)
5 5 5
10 (V)

4 4 30 (V) 4
3 3 3
5.5 (V)
2 2 20 (V) 2
14 (V)
1 1 1
ON OFF
0 0 0
0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 0 125 130 135 140 145 150 155
Output ON/OFF control voltage VC (V) Output current IO (A) Ambient temperature Ta (ºC)
Note on Thermal Protection Characteristics:

The thermal protection circuit is intended for protection
■ Overvoltage Protection Characteristics ■ Ta —PD Characteristics against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
6 20 short-circuiting over an extended period of time.
Use G746 silicone grease
With infinite heatsink (Shin-Etsu Chemical) and
aluminum heatsink.
5
Power Dissipation PD (W)
15
4 200•200•2mm (2.3ºC/W)
3 10 100•100•2mm (5.2ºC/W)
75•75•2mm (7.6ºC/W)
2
5
1
Without heatsink
0 0
10 20 30 40 50 --30 –20 0 20 40 60 80 100
Input voltage VIN (V) Operating temperature Ta (ºC)
9
Dropper Type Regulator ICs [3-terminal] SI-3003S

● 3-terminal IC regulator with 0.8A output current 4.2 ±0.2
● Voltage accuracy of ±2% 3.2 ±0.2 10 ±0.2 2.8 ±0.2
● Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A
4±0.2
● Built-in dropping type overcurrent, overvoltage and thermal protection circuits
0.5
7.9 ±0.2
● TO220 equivalent full-mold package
16.9 ±0.3
a
2 max
Absolute Maximum Ratings b 2.6 ±0.15
(Ta =25ºC)
Parameter Symbol Ratings Unit Conditions
DC input voltage VIN 35 V 0.94 ±0.15
(13.5)
+0.2
2 0.85 –0.1
Output current IO 0.8 * A
PD1 22 W With infinite heatsink

Power Dissipation
PD2 1.8 W Stand-alone without heatsink +0.2
4•P1.7 ±0.15 = 6.8 ±0.15 0.45 –0.1
(root dimensions)
Junction temperature Tj –40 to +150 ºC
Operating temperature TOP –40 to +100 ºC Terminal connections

1. VIN
Storage temperature Tstg –40 to +150 ºC 2. (NC) a: Part No.
1 2 3 4 5
3. GND b: Lot No.
Junction to case thermal resistance j-c 5.5 ºC/W
4. (NC)
Junction to ambient-air thermal 5. VO
resistance (Forming No. 1115)
Electrical Characteristics Equivalent Circuit Diagram

(Tj=25ºC, VIN =14V, IO =0.5A unless otherwise specified)
Ratings
min typ max
Input voltage VIN 6*2 30 * 1 V

VIN VO
Output voltage VO 4.90 5.00 5.10 V 1 5
0.5 V IO 0.5A OCP
DRIVE
Dropout voltage VDIF
1.0 V IO 0.8A TSD DET
ERR
Line regulation VO LINE 30 mV VIN =8 to 16V
Load regulation VO LOAD 100 mV IO =0 to 0.5A REF
Ripple rejection RREJ 54 dB f=100 to 120Hz
Quiescent circuit current Iq 3 10 mA IO =0A

3
Overcurrent protection starting 3
GND
IS1 0.9 * A
current
Notes:
*1. Since P D (max) = (VIN – VO) • IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta —P D curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to –5%. Standard Circuit Diagram
D1 *2
1 5
SI-3003S
2 4
DC input + *1 N.C 3 N.C + DC output
C2 CO
VIN C1 VO
Co : Output capacitor (47 to 100µF, 50V)

*1 C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long
wiring. Tantalum capacitors are recommended for C1
and Co, especially at low temperatures.
*2 D1 : Protection diode. Required as protection against reverse
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
10
Dropper Type Regulator ICs [3-terminal] SI-3003S
■ Io vs VDIF Characteristics ■ Line Regulation ■ Load Regulation

0.5 5.1 5.1
0.4
Dropout voltage VDIF (V)

5.0 5.0
0.3
IO =0A IO=0.5, 0.8A VIN =35V

0.2 =0.2A =0.2A =25V
=0.5A =0A =14V
=0.8A =6V
4.9 4.9
0.1
0 0 0
0 0.2 0.4 0.6 0.8 0 5 10 15 20 25 30 35 0 0.2 0.4 0.6 0.8
Output current IO (A) Input voltage VIN (V) Output current IO (A)
■ Output Voltage Temperature Characteristics ■ Rise Characteristics ■ Circuit Current

5.1 6 250
IO =0A
5 =0.5A
=0.8A 200
Ground current lg (mA)

VIN / IO:
4
30V / 0A
14V / 0.5A 150
6V / 0.8A
5.0 3
IO=0.8A
100 =0.5A
2 =0.2A
=0A
50
1
4.9 0 0
–50 0 50 100 150 0 2 4 6 8 10 0 5 10 15 20 25 30 35
Ambient temperature Ta (ºC) Input voltage VIN (V) Input voltage VIN (V)
■ Overcurrent Protection Characteristics ■ Thermal Protection Characteristics ■ Ta —PD Characteristics

6 6 25
VIN =6V With silicone grease
With infinite heatsink
IO=5mA Heatsink: aluminum
5 5 20
200 • 200 • 2mm

4 4 (2.3ºC/W)
15
100 • 100 • 2mm
3 3 (5.2ºC/W)
10
2 VIN =6V 2 75 • 75 • 2mm
14V (7.6ºC/W)
5
1 35V 1
Without heatsink
25V
0 0 0
0 0.5 1.0 1.5 2.0 2.5 120 140 160 180 200 –40 0 40 80 100
Output current IO (A) Ambient temperature Ta (ºC) Operating temperature Ta (ºC)

The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
11
Dropper Type Regulator ICs [2-output] SI-3101S

● Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> 3.2 ±0.2 4.2 ±0.2
● Main output can be externally turned ON/OFF (with ignition switch, etc.) 10.0 ±0.2 2.8 ±0.2
0.5
<most suitable as memory backup power supply>
4.0 ±0.2
● Low standby current ( 0.8mA)
7.9 ±0.2
● Low dropout voltage 1V
16.9 ±0.3
● TO220 equivalent 5-terminal full-mold package a
(17.9)
2.6 ±0.1
b
(2.0)
5.0 ±0.6
0.95 ±0.15
Absolute Maximum Ratings (Ta=25ºC) +0.2
0.85 –0.1
(4.6)
(8.0)
+0.2
–0.1
0.45
DC input voltage VIN 40 V
P1.7 ±0.7 • 4 = 6.8±0.7 3.9 (4.3)
Battery reverse connection VINB –13 * 6 V One minute
8.2 ±0.7
Output control terminal voltage VC VIN V

1
CH1 IO1 0.07 * A 1. VIN
Output current 2. VC (on/off) a: Part No.
CH2 IO2 0.4 * 1 A 1 2 3 4 5 3. GND b: Lot No.
4. VO1
PD1 18 W With infinite heatsink 5. VO2
Power Dissipation
PD2 1.5 W Stand-alone without heatsink (Forming No. 1101)
Junction Temperature Tj –40 to +125 ºC
Operating temperature TOP –40 to +115 ºC
Storage temperature Tstg –40 to +125 ºC
Junction to case thermal resistance j-c 5.5 ºC/W Equivalent Circuit Diagram
Junction to ambient-air thermal
j-a 66.7 ºC/W Stand-alone without heatsink VO1
resistance VIN
1 4
OCP
DRIVE
TSD DET
ERR
Electrical Characteristics (Tj=25ºC, VIN =14V unless otherwise specified) REF

5
Ratings
Parameter Symbol Unit Conditions VO2
min typ max
OCP
Input voltage VIN 6 *2 35 * 1 V OVP
DRIVE
DET
CH1 VO1 4.80 5.00 5.20 V IO =0.05A ERR
Output voltage
CH2 VO2 4.80 5.00 5.20 V IO =0.3A 2 3
VC CONT GND
Channel-channel voltage difference IO1 =0 to 0.05A
VO –0.1 0.1 V
(VO1 —VO2) IO2 =0 to 0.3A
CH1 VDIF1 1.0 V IO1 0.05A

Dropout voltage
CH1 VO LINE1 10 30 mV VIN =6 to 18V, IO =0.05A

Line regulation Standard Circuit Diagram
CH2 VO LINE2 10 30 mV VIN =6 to 18V, IO =0.3A
D3
CH1 VO LOAD1 30 70 mV IO1=0 to 0.05A
Load regulation D2
VO LOAD2 40 70 mV IO2 =0 to 0.3A VIN VO2
CH2
1 5
CH1 RREJ1 54 dB f =100 to 120Hz D1 SI- 3101S
Ripple rejection 2
3
4
CH2 RREJ2 54 dB f =100 to 120Hz VC VO1
+ GND + +
Quiescent circuit current Iq 0.8 mA IO1=0A, VC =0V
CIN CO1 CO2
3
Overcurrent protection CH1 I (S1) 1 0.1 * A
starting current CH2 I (S1) 2 0.5 * 3 A
Output ON VCH 4.2 4.5 4.8 V CO1 : Output capacitor (47 to 100µF, 50V)
Output control voltage
Output OFF VCL 3.2 3.5 3.8 V CO2 : Output capacitor (47 to 100µF, 50V)
*1 CIN : Input capacitors (approx. 47µF).
Output ON I CH 100 µA VC =4.8V
Output control current Tantalum capacitors are recommended for CO1, CO2
Output OFF I CL –100 µA VC =3.2V and CIN, especially at low temperatures.
*2 D1, D2, D3 : Protection diode.
Overvoltage protection starting
VOVP 35 * 4 V Required as protection against reverse biasing
voltage
between input and output.
Thermal protection starting (Recommended diode: Sanken EU2Z.)
TTSD 130 * 5 ºC
temperature
Notes:
*1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
12
■ Line Regulation (1) ■ Line Regulation (2) ■ Load Regulation (1)

5.1 5.1 5.1
VC = 5 (V) VC = 5 (V) VC = 5 (V)
IO2 = 0 (A) I O1 = 0 (A) I O2 = 0 (A)
I O1 = I O2 = V IN =

0mA 0A 6V 14V
0.3A 22V
50mA
5.0 5.0 5.0
70mA 0.5A
4.9 4.9 4.9

0 0 0
0 5 10 15 20 25 0 5 10 15 20 25 0 10 20 30 40 50 60 70
Input voltage V IN (V) Input voltage V IN (V) Output current IO (mA)
■ Load Regulation (2) ■ Rise Characteristics ■ Quiescent Circuit Current

5.1 6
VC = 5 (V)
10 I O1 = 0 (A)
I O1 = 0 (A)
5 Vc = 0 (V)

V IN =
6V,14V Load resistor

4
100Ω
5.0 22V
3 ∞
5
2
71.4Ω
1
4.9
0 0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 0 5 10 15 20
Output current IO (A) Input voltage VIN (V) Input voltage VIN (V)
■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics (1) ■ Overcurrent Protection Characteristics (2)
6 6 6
5 5 5
V IN = 4.5V
Output voltage VO2 (V)
6V
4 4 14V 4
V IN = 22V VIN =
14V, 22V 6V IO2 = 0 (A) 6V
3 I O1 = 0 (A)
3 VC = 5 (V) 3 14V
4.5V VC = 5 (V)
22V
2 2 2
OFF ON
1 1 1
0 0 0
0 1 2 3 4 5 6 0 0.05 0.1 0.15 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Output ON/OFF control voltage VC (V) Output current IO (A) Output current IO (A)
■ Thermal Protection Characteristics ■ Overvoltage Protection Characteristics ■ Ta—PD Characteristics

6 6 20
VIN = 6 (V) With infinite heatsink
With silicone grease G746
(Shin-Etsu Chemical)
I O1 = I O2 = 5 (mA) Heatsink: aluminum
5 5
15
VO1
4 4 200 • 200 • 2mm (2.3ºC/W)
IO1 = I O2 = 5 (mA) VO2

3 VC = 5 (V) 10 100 • 100 • 2mm (5.2ºC/W)
3
75 • 75 • 2mm (7.6ºC/W)
2 2
5
1 1
Without heatsink
0 0 0
0 130 140 150 160 10 20 30 40 --30 --20 0 20 40 60 80 100 115
Ambient temperature Ta (ºC) Input voltage VIN (V) Operating temperature Ta (ºC)
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
13

● Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)>
● Main output can be externally turned ON/OFF (with ignition switch, etc.) 3.2 ±0.2
10.0 ±0.2
4.2 ±0.2
2.8 ±0.2
0.5
<most suitable as memory backup power supply>
● Low standby current ( 0.8mA)
4.0 ±0.2
7.9 ±0.2
● Low dropout voltage 1V
16.9 ±0.3
● TO220 equivalent 5-terminal full-mold miniature package
(17.9)
a
2.6 ±0.1
b
(2.0)
5.0 ±0.6
Absolute Maximum Ratings (Ta=25ºC) 0.95 ±0.15
+0.2
Parameter Symbol Ratings Unit Conditions 0.85 –0.1
(4.6)
(8.0)
DC input voltage VIN 35 V +0.2
–0.1
0.45
Battery reverse connection VINB –13 * 6 V One minute
P1.7 ±0.7 • 4 = 6.8 ±0.7 3.9 ±0.7 (4.3)
Output control terminal voltage VC VIN V 8.2 ±0.7
CH1 IO1 0.04 * 1 A

Output current 1. VIN a: Part No.
CH2 IO2 0.1 * 1 A 2. VC (on/off) b: Lot No.
1 2 3 4 5 3. GND
PD1 22 W With infinite heatsink 4. VO1
Power Dissipation 5. VO2
PD2 1.8 W Stand-alone without heatsink
Junction temperature Tj –40 to +150 ºC (Forming No. 1101)

Equivalent Circuit Diagram
resistance
VIN VO1
1 4
OCP
DRIVE
Electrical Characteristics (Tj = 25ºC, VIN = 14V unless otherwise specified)
TSD DET
ERR
Ratings
min typ max REF
5
Input voltage VIN 6 *2 30 * 1 V VO2
CH1 VO1 4.80 5.00 5.20 V IO = 0.04A OCP
Output voltage OVP
DRIVE
CH2 VO2 4.80 5.00 5.20 V IO = 0.1A DET

ERR
Channel-channel voltage difference IO1 =0 to 0.04A
VO –0.1 0.1 V
(VO1 —VO2) IO2 =0 to 0.1A 2 3
VC CONT GND
Dropout voltage
CH1 VO LINE1 10 50 mV VIN = 6 to 30V, IO = 0.04A

Line regulation
CH2 VO LINE2 10 50 mV VIN = 6 to 30V, IO = 0.1A
CH1 VO LOAD1 30 70 mV IO1 = 0 to 0.04A

Load regulation
CH2 VO LOAD2 40 70 mV IO2 = 0 to 0.1A
CH1 RREJ1 54 dB f = 100 to 120Hz

Ripple rejection
CH2 RREJ2 54 dB f = 100 to 120Hz Standard Circuit Diagram
Quiescent circuit current Iq 0.8 mA IO1 = 0A, VC = 0V
3
Overcurrent protection CH1 I (S1) 1 0.06 * A D3
3
starting current CH2 I (S1) 2 0.15 * A D2
VIN VO2
Output ON VCH 4.2 4.5 4.8 V 1 5
Output control voltage D1 SI- 3102S
Output OFF VCL 3.2 3.5 3.8 V 2
3
4
VC VO1
Output ON I CH 100 µA VC = 4.8V + + +
GND
Output control current
Output OFF I CL –100 µA VC = 3.2V CIN CO1 CO2
Overvoltage protection starting 4

VOVP 30 * V
voltage
Thermal protection starting 5 CO1 : Output capacitor (47 to 100µF, 50V)

TTSD 151 * ºC
temperature CO2 : Output capacitor (47 to 100µF, 50V)
*1 CIN : Input capacitors (approx. 47µF).
Notes: Tantalum capacitors are recommended, for CO1,
*1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on CO2 and CIN, especially at low temperatures.
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.
*2 D1, D2, D3 : Protection diode.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%. Required as protection against reverse biasing
*4. Overvoltage protection circuit is built only in CH2 (VO2 side). between input and output.
*5. The indicated temperatures are junction temperatures. (Recommended diode: Sanken EU2Z.)
*6. All terminals, except VIN and GND, are open.
14
■ Line Regulation (1) ■ Line Regulation (2) ■ Load Regulation (1)

5.10 5.10 5.10
VIN = VC VIN = VC VIN = VC
IO2 = 5mA IO1 = 5mA
5.05 5.05 5.05
IO2 =

IO1 = 0A VIN =
0A 50mA 6V
5.00 20mA 5.00 100mA 5.00 14V
40mA 30V
4.95 4.95 4.95
4.90 4.90 4.90
4.85 4.85 4.85

0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 0 10 20 30 40 50
Input voltage V IN (V) Input voltage VIN (V) Output current IO (mA)
■ Load Regulation (2) ■ Rise Characteristics ■ Quiescent Circuit Current

5.10 6 12
VIN = VC VC = 0V
IO1 = 0A
5.05 5 10

VIN =
6V,14V 4 8
5.00 IO1 = 0A
3 20mA 6
40mA
4.95
30V 2 4
4.90
1 2
4.85 0 0
0 20 40 60 80 100 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35
Output current IO (mA) Input voltage VIN (V) Input voltage VIN (V)
■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics (1) ■ Overcurrent Protection Characteristics (2)
6 6 6
VIN = 14V VIN = VC VIN = VC
IO2 = 5mA IO2 = 5mA IO1 = 5mA
5 5 5
4 4 4
OFF VIN = VIN =

3 3 6V 3 6V
ON
14V 14V
30V 30V
2 2 2
1 1 1
0 0 0
0 1 2 3 4 5 6 0 20 40 60 80 100 120 0 0.1 0.2 0.3 0.4 0.5
Output ON/OFF control voltage VC (V) Output current IO (mA) Output current IO2 (A)
■ Thermal Protection Characteristics ■ Overvoltage Protection Characteristics ■ Ta—PD Characteristics

6 6 25
VIN = 6V VIN = VC With infinite heatsink
With silicone grease G746
IO1 = IO2 = 5mA IO2 = 5mA (Shin-Etsu Chemical)
Heatsink: aluminum
5 5
20
VO1 200 • 200 • 2mm

4 4 (2.3ºC/W)
15
100 • 100 • 2mm
3 3 (5.2ºC/W)
VO2 10
2 2 75 • 75 • 2mm
(7.6ºC/W)
5
1 1
Without heatsink
0 0 0
100 120 140 180 200 220 240 26 28 30 32 34 36 38 –40 –20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (ºC) Input voltage VIN (V) Operating temperature Ta (ºC)
The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time. 15
Dropper Type System Regulator ICs SI-3322S

● High accuracy output of 5V±30mV Index area
● Memory backup power supply 4V±0.2V

● Power on reset function
SI-3322S
● Supply voltage monitor function SKA Lot 7.40 10.00
● Watch dog timer Lot

7.60 10.65
● CR not required for setting external time constant

1 2 3
0.25
0.75
• 45°
Adhesive surface
10.10
10.50
0.23
2.35 0.32
2.65
Absolute Maximum Ratings 0.33

0.51
0.10
0.30
0° to 8° 0.40
1.27
1.27 BSC
Parameter Symbol Applicable terminals Ratings Unit Conditions Coplanarity
(height difference among leads)
0.1mm max.
VIN (1) BAI, VCC, VNMIC –0.3 to 32 V
VS, NMIC, RSTTC, OUTE
Terminal voltage
VIN (2) VSC, NMI, RESET, OUTE –0.3 to 7 V
W/D, STBY
Standard Connection Diagram
Storage temperature Tstg — –40 to +125 °C
Operating temperature Top — –40 to +105 °C + A/D converter,

R1 47µF I/O circuit, etc.
Power dissipation PD — 1.4 W Ta = 25°C IG. SW +
47µF +
R2 120Ω 68µF
6 5 4 3 2
VNMIC VCC VB VS VSC VCC AVCC
1 9
BAI NMI NMI
+
Electrical Characteristics (Ta = 25°C unless otherwise specified) BATT 47µF SI-3322S STBY
15
STBY
Micro-
computer
8 12
Ratings GND RESET RESET
Parameter Symbol Unit Conditions NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND
min typ max 13 11 10 16 14
OPEN or GND
VSC output voltage VSC 3.8 4 4.2 V BAI = 4.2 to 16V, ISC = –0.2mA Logic circuit
VS output voltage VS 4.97 5 5.03 V VCC = 5.2 to 16V, IO = –350mA
VS –VSC voltage difference ∆VS 0.3 V VCC = 5.2V, ISC = –50mA R1, R2: NMI judge voltage (5V typ) variable resistor RSTTC: Normally open.
NMI judge voltage (R1 + R2) • 2.5V/R2 GND connected when TRE
BAI input current I BAI 0.6 mA BAI = 4.9 to 16V, ISC = –0.2mA R1, R2 2k is to be halved.
Normally, VNMIC terminal is open.
VCC input current I CC 5 mA VCC = 3 to 16V
VB input current IB 25 mA VCC = 3 to 16V
VS input current IS 20 mA VCC = BAI = 3 to 16V, ISC = 0mA
NMIC input current I NMIC –0.04 –0.1 –0.4 mA VCC = BAI = 14V
Circuit Block Diagram
W/D input current I W/D –0.04 –0.1 –0.4 mA VCC = BAI = 14V
+ +
RSTTC input current I RTC –0.04 –0.1 –0.4 mA VCC = BAI = 14V +
VNMIC VCC VB VS VSC
Lo VNIL 4.9 5 5.1 V NMIC = 0V 6 5 4 3 2
NMI judge voltage Start
–
Hysteresis ∆VN 0.12 0.3 V circuit +
Current
Main limit circuit
Hi VNOH VS–0.5 V Isource = –1mA regulator
NMI output voltage BAI 1
Lo VNOL 0.6 V Isink = 0.5mA 9 NMI
– –
+ +
VSOH VS–0.5 V Isource = –1mA NMI judge
Hi circuit
STBY output voltage
Backup regulator Reference STBY
Lo VSOL 0.6 V Isink = 0.5mA oscillation Counter control 15 STBY
circuit circuit
Hi VROH VS–0.5 V Isource = –1mA
RESET output voltage Frequency
OUTE comparator RESET
Lo VROL 0.6 V Isink = 0.5mA GND 8 control control 12 RESET
circuit circuit
Hi VUOH VS–0.5 V Isource = –1mA
OUTE output voltage
Lo VUOL 0.6 V Isink = 0.5mA 13 11 10 16 14
NMIC OUTE OUTE W/D RSTTC
Hi VTOH VS–0.5 V Isource = –1mA
OUTE output voltage
Lo VTOL 0.6 V Isink = 0.5mA
Standby release time TST 5 10 20 ms
Reset release time TRE 60 75 90 ms Timing Chart

Reset cycle TRC 40 50 60 ms VNIL
VCC VNIL+∆VN
Reset period TRP 20 25 30 ms
VS (BAI=14V)
W/D signal stop detect period TWS 10 12.5 15 ms
VSC 0V 0V
Reset signal output time TNR 80 µs
NMI
Standby signal output time TRS 10 µs TRS
STBY TST
TRP
W/D fail judge frequency FFH 2 5 kHz TRE
RESET TNR
Out enable release time TWE 40 50 10 ms TRC
OUTE TWS TWE
Notes: The direction of current flowing into the IC is positive (+). OUTE
W/D HI or Lo
Power on W/D input stop W/D input start Power off
(microcomputer (microcomputer
runaway) resets)
16
Dropper Type System Regulator ICs SI-3322S
■ VS Line Regulation ■ VS Load Regulation ■ VS Rise Characteristics

5.03 5.03 6
5.02 5.02 5
IO = 0A
5.01 IO = 0A 5.01 4
VS (V)
VS (V)
VS (V)
5 5 3
0.4A
4.99 0.4A 4.99 2
4.98 4.98 12V 1

VCC = 5.2V
4.97 4.97 0
0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VCC (V) IO (A) VCC (V)
■ VS Overcurrent Protection Characteristics ■ VCC Input Current ■ VB Input Current

6 5 20
No load
5
4
15
4
3
ICC (mA)
I B (mA)
VS (V)
3 10
VCC = 7V
2
2
12V
5
1
1
0 0 0
0 0.5 1 1.5 2 0 5 10 15 20 0 5 10 15 20
IO (A) VCC (V) VCC (V)
■ VS Input Current ■ VSC Rise Characteristics ■ VSC Overcurrent Protection Characteristics

20 5 6
No load
5
4
15
4
3
IS (mA)
VSC (V)
VSC (V)
10 3
2
2
5
1
1
0 0 0
0 5 10 15 20 0 5 10 15 20 0 2 4 6 8 10
VCC (V) BAI (V) ISC (A)
■ BAI Input Current ■ VS-VSC Voltage Difference ■ NMI Judge Voltage Characteristics
500 500 6
No load
5
400 400
4
∆VS (mV)
300 300
IBAI (µA)
NMI (V)
3
200 200
2
100 100
1
0 0 0
0 5 10 15 20 0 20 40 60 80 100 120 4.5 4.7 4.9 5.1 5.3 5.5
BAI (V) ISC (mA) VCC (V)
17
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

● Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) 12.2±0.2
● Power on reset function 10.5±0.2
+0.1
1.0 –0.05
● Watchdog timer 16 9
Fin
thickness
● Built-in drooping type overcurrent and thermal protection circuits (ch1)
7.5±0.2
Absolute Maximum Ratings (Ta=25ºC)
+0.2
2.0 –0.8
Parameter Symbol Ratings Unit Remarks
1 8
–13 to 35 Reverse connection 1 min max.
DC input voltage VIN V +0.15
40 400mS 1.27±0.25 0.4 – 0.05
2.5±0.2
–0.3 to 35 +0.15
Output control terminal voltage EN V 0.25– 0.05
40 400mS
CH1 Io1 0.4
Output current A
CH2 Io2 0.2
MODE terminal input voltage MODE
W/D/C terminal input voltage W/D/C
TC terminal input voltage TC
–0.3 to 7 V
CK terminal input voltage CK
Vo1-fail terminal output voltage Vo1-fail
Reset terminal output voltage RESET Standard Connection Diagram
Junction temperature Tj –40 to 150 °C
Storage temperature Tstg –40 to 150 °C D1
Vin Vo1
Thermal resistance 4.1 °C/W With infinite heatsink
j-c
(junction to case) EN
With glass epoxy + copper foil board (size 5.0 x 7.4cm; Vo1
Thermal resistance j-a 38 °C/W SPF3004
(junction to ambient air) t: glass epoxy = 1.6mm/copper foil = 18µm) Cin Vo1 fail
+ MODE + Co1
Vo2
Battery Load
GND RESET
Electrical Characteristics W/D/C CK TC
D2
Ratings
Parameter Symbol min typ max Unit Conditions
Input voltage VIN Vo1+VDIF1 * 3 35 * 4 V
VIN = Vo1+VDIF1 to 18V,
CH1 Vo1 4.90 5.00 5.10 Io1 = 0 to 0.4A, Tj = –40 to 125°C
Output voltage VIN = Vo1+VDIF1 to 18V,
CH1 Vo1 4.85 5.00 5.15 V Io1 = 0 to 0.4A, Tj = –40 to 150°C Rtc
+
VIN = Vo2+VDIF1+VDIF2 to 18V,
CH2 Vo2 3.15 3.30 3.45 Io1 = 0 to 0.2A Load + Co2
CH1 VDIF11 0.5 Io1 = 0.4A Ctc
Dropout voltage CH1 VDIF12 0.25 V Io1 = 0.2A, Tj = 25°C

CH2 VDIF2 0.5 Io2 = 0.2A Cin: Capacitor (39µF) for oscillation prevention
CH1 RREJ1 54 CO1: Output capacitor (39µF)
Ripple rejection db f = 100 to 200Hz CO2: Output capacitor (39µF)
CH2 RREJ2 54
Tantalum capacitors are recommended especially for low
10 50 VIN = 16V, EN = 0V
µA temperatures.
Quiescent circuit current Iq 50 250 VIN = 35V, EN = 0V D1, D2: Protection diodes.
5 10 mA Required as protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).
GND current IGND 70 100 mA Io1 = Io2 = 0.2A
Overcurrent protection CH1 Is11 0.402 1.80 Vo1 = 4.5V
A
starting current CH2 Is21 0.201 0.80 Vo2 = 2.8V
Residual current CH1 Is21 0.402 1.80 Vo1 = 0V
A
at a short CH2 Is22 0.201 0.80 Vo2 = 0V
EN output control voltage VENth

1.0 3.5
V
Tj = –40 to 125°C Timing Chart
0.9 3.5 *8
IENH1 50 EN = 6.4V, Tj = –40 to 125°C
EN output control ON
current IENH2 30 µA EN = 3.51V, Tj = –40 to 125°C
Vin EN (ON) operation EN (OFF) operation
OFF IENL –1.0 1.0 EN = 0V, Tj = –40 to 125°C
EN
Vo1-fail terminal LOW voltage Vfail L 0.5 V Isink = 250µA, (Pull-up resistance 20kΩ typ) OCP
operation
Vo1-fail terminal HI voltage Vfail H Vo1–0.8V * 5 V Isource = 15µA Vo1thH Vo1thL Reset
Vo1 operation
Reset terminal LOW voltage VRSL 0.5 V Isink = 250µA, (Pull-up resistance 20kΩ typ)
Reset terminal HI voltage VRSH Vo1–0.8V * 5 V Isource = 15µA Vo1 fail
(Vo1 pull-up) OCP
Vo1thH Vo1 • 0.97 V Vrs, Vfail 4.5V operation
Reset
CH1 operation
Vo1thL 4.05 V Vrs, Vfail 0.8V Vo2thH Vo2thL
Reset detect voltage Vo2
Vo2thH Vo2 • 0.985 V Vrs 3.0V
CH2 MODE
Vo2thL 3.00 V Vrs 0.8V (Vo1 system connection) Vmodeth
Vo1 pull-up status
∆Vo1th ∆Vo1th = Vo1thH-Vo1thL
Open status
Reset detect voltage CH1 0.255 V TC
hysteresis width ∆Vo2th ∆Vo2th = Vo2thH-Vo2thL
(3.3 pull-up)
CH2 0.105 V
Power on reset delay time tdly 0.70 • Rtc • Ctc 0.72 • Rtc • Ctc 0.74 • Rtc • Ctc S Min. set time: 6mS RESET
tdly tdly
W/D time twd 0.52 • Rtc • Ctc 0.54 • Rtc • Ctc 0.56 • Rtc • Ctc S Min. set time: 4mS twd tdly-twdp
W/D/C twdp
W/D pulse time twdp 0.04 • Rtc • Ctc 0.06 • Rtc • Ctc 0.08 • Rtc • Ctc S Min. set time: 400µS (Vo1 system connection) W/D
Open status Stop period
MODE terminal control voltage Vmodeth 1.0 3.0 V CK
MODE terminal ON ImodeH 200 MODE = 5V
control current µA
OFF ImodeL –1.0 1.0 MODE = 0V, Tj = –40 to 125°C
W/D/C terminal control voltage Vw/d/cth 1.0 3.0 V *7
W/D/C terminal ON Iw/d/cH 200 W/D/C = 5V
µA
control current OFF Iw/d/cL –1.0 1.0 W/D/C = 0V, Tj = –40 to 125°C
CK terminal control voltage Vckth 1.0 3.0 V Min. clock pulse time = 5µS (Duty 50%)
CK terminal control ON IckH 200 CK = 5V
µA
current OFF IckL –1.0 1.0 CK = 0V, Tj = –40 to 125°C
Notes:
*3: Refer to dropout voltage.
*4: Since PD (max) = {(VIN–VO1) • (IO1+ IO2)} + (VIN • Iq) + {(VO1–VO2) • IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155
°C (min.) and 165°C (typ). These values represent the design warranty.
*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of
RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.
18 *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.
■ Rise Characteristics of Output Voltage ■ Line Regulation (V01) ■ Line Regulation (V02)
6
5.10 3.50
Output voltage VO1, VO2 (V)
IO1=0A

0.4A
4
5.00 3.40
IO2=0A
0.2A IO1=0A
2 0.2A IO2 =0A
0.4A 0.1A
0.2A
4.90 3.30
0
0 2 4 6 8 10 0 10 20 30 40 0 10 20 30 40
Input voltage V IN (V) Input voltage VIN (V) Input voltage VIN (V)
■ Load Regulation (V01) ■ Load Regulation (V02) ■ Dropout Voltage (V01)

1.0
5.10 3.50
Vdif1 (V)
Dropout voltage
5.00 3.40 0.5
VIN =6V
10V VIN =6V
14V 10V
18V 14V
18V
4.90 3.30
0 0 0
0 0.1 0.2 0.3 0.4 0 0.05 0.10 0.15 0.20 0 0.2 0.4 0.6
Output current IO1 (A) Output current IO2 (A) Output current IO1 (A)
■ GND Current ■ Overcurrent Protection Characteristics (V01) ■ Overcurrent Protection Characteristics (V02)
6
40 4
GND current IGND (mA)
4
VIN =6V
IO1=0.4A 10V
VIN =6V
10V 14V
14V 18V
20 18V 2
IO1=0.2A 2
IO1=0A
0 0 0
10 20 30 40 0 0.5 1.0 0 0.2 0.4 0.6
Input voltage VIN (V) Output current IO1 (A) Output current IO2 (A)
■ Thermal Protection Characteristics ■ EN Terminal Output Voltage ■ Ta—PD Characteristics

6 6
IO1=5mA
40
Power dissipation PD (W)
Infinite heatsink equivalent

4 4 (Tc=25°C)
30
20
2 2
10
Copper foil area
(5.0•7.4mm, t=1µm)
0 0
100 120 140 160 180 200 1 2 3 4 -40 0 25 50 85 125 150
Ambient temperature Ta (ºC) EN terminal voltage VEN (V) Operating temperature Ta (ºC)
19

● Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) 12.2±0.2
● Power on reset function 10.5±0.2
+0.1
1.0 –0.05
● Watchdog timer 16 9
Fin
thickness
● Built-in drooping type overcurrent and thermal protection circuits (ch1)
7.5±0.2
2.0 – 0.8
+0.2
1 8
VIN1
DC input voltage –13 to 35 V Reverse connection 1 min max. +0.15
VIN2 1.27±0.25 0.4 –0.05
2.5±0.2
Vo1, Vo2 output control terminal voltage EN –0.3 to 35 V +0.15
0.25–0.05
Vo2 output control terminal voltage VC –0.3 to 35 V
CH1 Io1 0.4
Output current A
CH2 Io2 0.2
TC terminal input voltage TC
CK terminal input voltage CK
–0.3 to 7 V
W/D/C terminal input voltage W/D/C
Reset terminal output voltage RESET Standard Connection Diagram
P D1 18.6 With an infinite heatsink mounted.
Power dissipation W D1
P D2 2.97 *1 Vin1 Vo1
3Pin
Junction temperature Tj –40 to 150 °C EN
4Pin
2Pin 14Pin RESET Rtc
Operating temperature Top –40 to 105 °C Vin2
6Pin SFP3006 7Pin
Storage temperature Tstg –40 to 150 °C Vc
5Pin Vo2 Co1
Cin 1,9, 8Pin
Thermal resistance 12,13Pin 10Pin 11Pin Load
(junction to case) j-c 6.7 °C/W With an infinite heatsink mounted. Battery
–
GND
Tc –
CK W/D/C Ctc
Thermal resistance 42 °C/W *1
(junction to ambient air) j-a
D2
Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm)
* The regulator IC may be used only
with Vo1 (single output power
supply) by selecting NC (open) for Load Co2
5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.
Electrical Characteristics –
Ratings
min typ max Cin: Capacitor (39µF) for oscillation prevention
* 2, 3 CO1: Output capacitor (39µF)
Input voltage VIN1, 2 Vo1+VDIF1 35 V
CO2: Output capacitor (39µF)
CH1 Vo1 4.85 5.00 5.15 VIN1 = 6 to 18V, Io = 0 to 0.3A Tantalum capacitors are recommended particularly for low
Output voltage V temperatures (tantalum capacitors of about 0.47µ F in parallel).
CH2 Vo2 4.85 5.00 5.15 VIN2 = 6 to 18V, Io = 0 to 0.3A D1, D2: Protection diodes.
CH1 VDIF1 0.5 Required for protection against reverse biasing between input
Dropout voltage V and output (Recommended diode: SANKEN EU2Z).
CH2 VDIF2 0.5
CH1 RREJ1 54
Ripple rejection db f = 100 to 120Hz
CH2 RREJ2 54
10 50 VIN1 = 16V, VEN = 0V
µA
Quiescent circuit current Iq 50 250 VIN1 = 35V, VEN = 0V Circuit Block Diagram
5 10 mA
GND current IGND 70 100 mA Io1 = Io2 = 0.2A
CH1 Is11 0.402 1.8 Vo1 = 4.5V Vin1 Vo1
Overcurrent protection (4 Pin)
starting current A (3 Pin)
CH2 Is21 0.201 0.8 Vo2 = 4.5V D Vo1 RESET
EN E RESET
EN TSD Drive1 Err. (14 Pin)
Residual current CH1 Is21 0.402 1.8 Vo1 = 0V (2 Pin) OCP1 T W/D
at a short A
CH2 Is22 0.201 0.8 Vo2 = 0V
Vin2 Vo2
EN output control voltage VENth 0.9 3.5 V (6 Pin) (7 Pin)
Vc D
EN output control ON IENH 50 EN = 5V
current µA Vc
(5 Pin)
(Vo2: EN)
Drive2 Err. E
T
W/D/C
(11 Pin)
OFF IENL –1.0 1.0 EN = 0V OCP2
Isink = 250µA GND

Reset terminal LOW voltage VRSL 0.5 V (1,9,12,13 Pin)
(Pull-up resistance 20kΩ typ)
Reset terminal HI voltage VRSH Vo1-0.8V V Isource = 15µA *4 TC
(8 Pin)
CK
(10 Pin)
Vo1thH Vo1• 0.97 V Vrs 4.5V

Reset detect voltage CH
Vo1thL 4.05 V Vrs 0.8V
Power on reset delay time t dly 1.18 • Rtc • Ctc 1.26 • Rtc • Ctc 1.35 • Rtc • Ctc S Min. set time: 6mS
W/D time t wd 0.93 • Rtc • Ctc 1.03 • Rtc • Ctc 1.13 • Rtc • Ctc S Min. set time: 4mS Timing Chart
W/D pulse time t wdp 0.07 • Rtc • Ctc 0.13 • Rtc • Ctc 0.19 • Rtc • Ctc S Min. set time: 400µS
CK terminal control voltage Vckth 1.0 3.0 V Min. clock pulse time: 5µs (Duty 50%) Vin1,
Vin2
(+B)
CK terminal control ON IckH 200 VCK = 5V
current µA ENthH ENthL
EN
OFF IckL –1.0 1.0 VCK = 0V
Vo1 Vo1thH Vo1thL
Vc output control voltage Vcth 1.0 3.5 V (BACK UP power supply)
IcH 300 Vc = 5V
Vc output control current µA Vo
IcL –1.0 1.0 Vc = 0V Vo2
(Main power supply)
W/D/C terminal control voltage Vw/d/cth 1.0 3.0 V TC

tdly twd
W/D/C terminal control ON Iw/d/cH 200 VW/D/C = 5V RESET
µA W/D OFF
current OFF Iw/d/cL –1.0 1.0 VW/D/C = 0V CK
twdp mode
W/D/C
Notes:
*2: Refer to Dropout Voltage.
*3: Since PD (max) = (VIN–VO1) • IO1+ (VIN2–VO2) • IO2 + (VIN • Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151
°C (min.) and 165°C (typ). These values represent the design warranty.
20
■ Rise Characteristics of Output Voltage (V01) ■ Rise Characteristics of Output Voltage (V02) ■ Line Regulation (V01)
6 6 5.10
5.05

4 4
IO1=0A
0.2A IO2 =0A 5.00
0.4A 0.2A
0.4A
2 2 IO1=0A
4.95 0.2A
0.4A
0 0 4.90
0 2 4 6 8 10 0 2 4 6 8 10 0 5 10 15 20 25 30
Input voltage V IN (V) Input voltage VIN (V) Input voltage VIN (V)
■ Line Regulation (V02) ■ Load Regulation (V01) ■ Load Regulation (V02)

5.10 5.10 5.10
5.05 5.05 5.05


5.00 5.00 5.00
IO1=0A VIN =6V
0.1A VIN =6V 10V
0.2A 10V 14V
4.95 4.95 14V 4.95 18V
18V
4.90 4.90 4.90

0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 0 0.05 0.10 0.15 0.20
Input voltage VIN (V) Output current IO1 (A) Output current IO2 (A)
■ Dropout Voltage (V01) ■ Dropout Voltage (V02) ■ Overcurrent Protection Characteristics (V01)
0.6 0.6 6
Vdif1 (V)
Vdif2 (V)
0.4 0.4 4
VIN =6V
Dropout voltage
Dropout voltage
10V
Ta=150°C 14V
25°C 18V
–40°C
0.2 0.2 2
Ta=150°C
25°C
–40°C
0 0 0
0 0.2 0.4 0 0.1 0.2 0 0.2 0.4 0.6 0.8
Output current IO1 (A) Output current IO2 (A) Output current IO1 (A)
■ Overcurrent Protection Characteristics (V02) ■ Thermal Protection Characteristics ■ Ta—PD Characteristics

6 6 20
IO1=5mA Infinite heatsink

16 equivalent
(Tc=25°C)
4 4
12
VIN =6V
10V
14V
18V 8
2 2
Copper foil area
4 (5.0•7.4mm, t=18µm)
0 0 0
0 0.2 0.4 0.6 100 125 150 175 200 -50 0 50 100 150
Output current IO2 (A) Ambient temperature Ta (ºC) Operating temperature Ta (ºC)
21
Switching Type Regulator ICs SI-3201S

● Output current of 3A (Ta = 25ºC, VIN = 8 to 18V)
● High efficiency of 82% (VIN = 14V, I O = 2A) 3.2 ±0.2
10.0 ±0.2
4.2 ±0.2
2.8 ±0.2
● Requires 5 external components only
0.5
● Built-in reference oscillator (60kHz)
4.0 ±0.2
7.9 ±0.2
● Phase internally corrected
● Output voltage internally corrected
16.9 ±0.3
● Built-in overcurrent and thermal protection circuits
● Built-in soft start circuit
(17.9)
a
2.6 ±0.1
b
(2.0)
5.0 ±0.6
0.95 ±0.15

+0.2
0.85 –0.1
(4.6)
(8.0)
Parameter Symbol Ratings Unit Conditions +0.2
–0.1
0.45
Input voltage VIN 35 V
P1.7 ±0.7 •4 = 6.8 ±0.7 3.9 ±0.7 (4.3)
Output voltage IO 3 A 8.2 ±0.7
SWOUT terminal voltage VSWOUT –1 V

1. VIN a: Part No.
PD1 22 W With infinite heatsink 2. SWOUT
Power Dissipation b: Lot No.
1 2 3 4 5 3. GND
PD2 1.8 W Stand-alone 4. VS
5. SS
Storage temperature Tstg –40 to +125 ºC (Forming No. 1101)

j-a 66.7 ºC/W
resistance
Standard Circuit Diagram
SI-3201S L1
1 SW Tr 2
VIN VO
Recommended Operating Conditions VIN
a b
SWOUT
Ratings c d
Parameter Symbol e
Unit Conditions
min typ max f
D1
+ g +
Input voltage VIN 8 18 V C1 C2
5 SS
h VS 4
Output current IO 0.5 3 A
C3 GND i
Operating temperature Top –40 +85 ºC Ta—PD characteristics
3
GND GND
Electrical Characteristics (VIN = 14V, I OUT = 2A, Tj = 25ºC unless otherwise specified)
C1: 1000µF
C2: 1000µF
L 1: 250µH
D1: RK46 (Sanken)
Ratings
Parameter Symbol Unit Conditions a: Internal power supply f : Comparator
min typ max b: Thermal protection g: Overcurrent protection
c: Reference oscillator h: Error amplifier
Output voltage VO 4.80 5.00 5.20 V d: Reset i : Reference voltage
e: Latch & driver
Line regulation VO LINE 100 mV VIN = 8 to 18V
Load regulation VO LOAD 50 mV IO = 0.5 to 3A Cautions:

(1) A high-ripple current flows through C1 and C2. Use high-ripple
Efficiency *1 82 %
type 1000µF or higher capacitors with low internal resistance.
Oscillation frequency f OSC 50 60 70 kHz Refer to the respective data books for more information on
Quiescent circuit current Iq 5 10 mA IO = 0A reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.
Overcurrent protection starting
IS 3.1 A *2 (3) L1 should be a choke coil with a low core loss for switching
current
power supplies.
Low level voltage VSSL 0.2 V (4) Use a Schottky barrier diode for D1 and make sure that the
Soft *3
reverse voltage applied to the 2nd terminal (SWOUT terminal) is
start Source current when low I SSL 15 25 35 µA VSSL = 0.2V
within the maximum ratings (–1V). If you use a fast-recovery
terminal
Discharge resistance RDIS 200 kΩ VIN = 0V diode, the recovery voltage and the ON forward voltage may
cause a reversed-bias voltage exceeding the maximum ratings
Notes:
to be applied to the 2nd terminal (SWOUT terminal). Applying a
*1. Efficiency is calculated by the following equation:
reversed-bias voltage exceeding the maximum rating to the
VO • I O
= • 100 (%) 2nd terminal (SWOUT terminal) may damage the IC.
VIN • I IN
*2. A dropping-type overcurrent protection circuit is built in the IC. (5) The 4th terminal (VS) is an output voltage detection terminal.
*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the Since this terminal has a high impedance, connect it to the
soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open positive (+) terminal of C2 via the shortest possible route.
when not using it since it is already pulled up in the IC. (6) Leave the 5th terminal (soft start terminal) open when not
using it. It is pulled up internally.
(7) To ensure optimum operating environment, connect the high-
frequency current line with minimum wiring length.
SI-3201S SI-3201S SI-3201S
5 SS 5 SS 5 SS
C3 C3
22
Switching Type Regulator ICs SI-3201S
■ Line Regulation ■ Load Regulation ■ Rise Characteristics

5.10 5.15 6
5 Io = 0A
5.10
5.05 = 1A
= 2A

5.05 4 = 3A
5.00
Io = 0A
= 1A 5.00 3
VIN =18V
4.95 = 2A
= 3A = 10V
4.95 2
= 7V
4.90
4.90 1
4.85 4.85 0
0 5 10 15 20 25 30 35 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10
Input voltage VIN (V) Output current IO (A) Input voltage VIN (V)
■ Efficiency Curve ■ Overcurrent Protection Characteristics ■ Overcurrent Protection Temperature Characteristics

90 6 6
80 5 5
VIN =18V

V IN = 18V = 10V 4
(%)
4
70 = 10V = 7V TC = +100, 25, --20ºC
Efficiency
= 7V
3 3
60
2 2
50
1 1
40 0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0
Output current IO (A) Output current IO (A) Output current IO (A)
■ Ta —PD Characteristics
25
With infinite heatsink With silicone grease
Heatsink: aluminum
20
15
10
0
–40 0 40 80 120 160
Operating temperature Ta (ºC)
23
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Features External Dimensions (unit: mm) SMD-16A

● Built-in diagnostic function to detect short and open circuiting of loads and
output status signals 0.89 ±0.15 2.54 ±0.25
1.0 ±0.3
● Low saturation PNP transistor use 0.25
0.75 –0.05
+0.15
● Allows direct driving using LS-TTL and C-MOS logic levels 16 9
● Built-in overcurrent protection circuits
9.8 ±0.3
a
6.8max
3.0 ±0.2
6.3 ±0.2
8.0 ±0.5
● Built-in protection against reverse connection of power supply
● Tj = 150ºC guaranteed b
0 to 0.15
● Surface-mount full-mold package +0.15
0.3 –0.05 Pin 1 20.0max 8

Power supply voltage VB –13 to +40 V
4.0max
3.6 ±0.2
Drive terminal applied voltage VD –0.3 to VB V
1.4 ±0.2
Input terminal voltage VIN –0.3 to +7.0 V
DIAG output applied voltage VDIAG –0.3 to +7.0 V a: Part No.

b: Lot No.
DIAG output source current IDIAG 3 mA
Voltage across power supply

VB–D VB –0.4 V
and drive terminal
Output current IO 1.5 A

Power dissipation PD 2.6 W Without heatsink, all circuits operating
The MIC is bound by the dotted lines. 9,12,16
VB 2
*
Pre. Reg.
2
IN1 CONT. Drive
11kΩ typ.
3 O.C.P
DIAG1
DIAG DET. 1,15
Out1 2 *
Electrical Characteristics (VBopr =14V, Ta=25ºC unless otherwise specified) T.S.D
14
D1 1
*
Ratings
min typ max 7
IN2 CONT. Drive
11kΩ typ.
Operating power supply voltage VBopr 6.0 16 V 6 O.C.P
DIAG2
Iq 5 12 mA Lo output DIAG DET.
Quiescent circuit current 8,10
11
Out2 *2
Threshold input voltage VINth 0.8 3.0 V D2 1
*
4,5,13
Hi output I IN 1.0 mA VIN = 5V GND

*2
Input current [Abbreviations]
Lo output I IN 0 100 µA VIN = 0V Drive: Drive circuit DIAG.DET.: Diagnostic circuit
CONT: ON/OFF circuit O.C.P.: Overcurrent protection
Saturation voltage of output
VCE (sat) 0.5 V IO 1.0A, VBopr = 6 to 16V Pre.Reg: Pre-regulator T.S.D.: Thermal protection
transistor
Output terminal sink current IO (off) 2.0 mA VO = 0V, VIN = 0V *1. The base terminal (D terminal) is connected to the output
transistor base. It is also connected to the control monolithic
Saturation voltage of DIAG output VDL 0.3 V IDIAG = 3mA IC. Do not, therefore, apply an external voltage in operation.
Leak current of DIAG output IDGH 100 µA VDIAG = 5V *2. SDH04 have two or three terminals of the same function (VB,
Out1, Out 2, GND). The terminals of the same function must be
Open load detection resistor Ropen 1 30 kΩ
shorted at a pattern near the product.
IS 1.6 A VO = VBopr –1.9V
current
TON 8 30 µs IO = 1A
Output transfer time Standard Circuit Diagram
TOFF 15 30 µs IO = 1A
TPLH 10 30 µs IO = 1A
DIAG output transfer time
TPHL 15 30 µs IO = 1A VB
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute PZ
D1
(all terminals except, VB and GND, are open). Out
SDH04 VCC
IN
Diagnostic Function DIAG
5.1kΩ
Load
VB
GND
3.0V
0.8V
VIN
GND Truth table
VIN VO GND
VOUT H H
GND
SHORT L L
OVER
Is VOLTAGE TSD
OPEN OPEN
Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.

IO VOUT turns "L" when a high impedance is connected to the IN terminal in
series.
GND VDIAG
Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU
24
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
■ Quiescent Circuit Current (dual circuit) ■ Circuit Current (single circuit) ■ Circuit Current (dual circuit)
VIN = 0V VIN = 5V VIN = 5V
20 50 100
Ta =
–40ºC
Ta = –40ºC
40 80 Ta =
25ºC –40ºC
125ºC 25ºC
30 60
Iq (mA)
IB (mA)
IB (mA)
25ºC
10 125ºC
20 40 125ºC
VIN = 0V
VO shorted 10 20
VIN = 0V
VO open
0 0 0
0 10 20 30 40 46 0 10 20 30 40 46 0 10 20 30 40 46
VB (V) VB (V) VB (V)
■ Saturation Voltage of Output Transistor ■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC)
1.5 20 20
Ta =
VB = 16V 125ºC VB = VB =
VB = 6V 18V 18V
15 15
1.0
VCE (sat) (V)
VO (V)
VO (V)
14V 14V
25ºC 10 10
0.5
–40ºC
5 5
6V
6V
0 0 0
0 1 2 3 0 1 2 3 4 0 1 2 3 4
IO (A) IO (A) IO (A)
■ Overcurrent Protection Characteristics (Ta=125ºC) ■ Threshold Characteristics of Input Voltage ■ Input Terminal Source Current
VB = 14V IO = 1A VB = 14V
20 15 1.0
Ta = 125ºC 25ºC –40ºC
VB =
18V
0.8
15
10
14V 0.6
IIN (mA)
VO (V)
VO (V)
Ta = 125ºC
10
25ºC
0.4 –40ºC
5
5
6V 0.2
0 0 0
0 1 2 3 4 0 1 2 3 0 2 4 6 8 10
IO (A) VIN (V) VIN (V)
■ Input Terminal Sink Current ■ Saturation Voltage of DIAG Output

VB = 14V VIN= 0V
1.0 0.3
VB = 14V
IDIAG = 3mA
0.2
IINL (µA)
VDL (V)
0.5
0.1
0 0
–50 0 50 100 150 –50 0 50 100 150
Ta (ºC) Ta (ºC)
25
High-side Power Switch ICs [With Diagnostic Function] SI-5151S

● Built-in diagnostic function to detect short and open circuiting of loads and 4.2 ±0.2
3.2 ±0.2
output status signals 10 ±0.2 2.8 ±0.2
● Low saturation PNP transistor use
● Allows direct driving using LS-TTL and C-MOS logic levels
4 ±0.2
7.9 ±0.2
16.9 ±0.3
● TO220 equivalent full-mold package not require insulation mica
20 max
2.6 ±0.1
a
b
+0.2
2.9 –0.3
R-end
Power supply voltage VB 40 V +0.2
3.6 ±0.5
+0.2
0.85 –0.1 0.45 –0.1
Input terminal voltage VIN –0.3 to VB V P1.7 ±0.1 • 4 = 6.8 4 ±0.6
DIAG terminal voltage VDIAG 6 V
Collector-emitter voltage VCE 40 V 1. GND a: Part No.

2. VIN b: Lot No.
Output current IO 1.8 A 3. VO
4. DIAG
PD1 18 W With infinite heatsink (Tc = 25ºC) 5. VB
Power Dissipation
Stand-alone without heatsink (Forming No. 1123)
PD2 1.5 W
(Tc = 25ºC)

VB
5
Electrical Characteristics (Ta=25ºC unless otherwise specified) VO PZ
Parameter Symbol
Ratings
Unit Conditions
SI-5151S 3
VCC
min typ max VIN 2
DIAG
Operating power supply voltage VBopr 6.0 30 V
4 5.1kΩ
Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V LS-TTL
or 1
Load
0.5 V IO 1.0A, VBopr = 6 to 16V CMOS
VCE (sat)
transistor 1.0 V IO 1.8A, VBopr = 6 to 16V
Output leak current IO, leak 2 mA VCEO = 16V GND

Truth table
Output ON VIH 2.0 VB V VBopr = 6 to 16V VIN VO
Input voltage
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V H H
L L
Output ON I IH 1 mA VIN = 5V
Input current
Output OFF I IL –0.1 mA VIN = 0V

IS 1.9 A VBopr = 14V, VO = VBopr –1.5V
current
Thermal protection starting

Diagnostic Function
TTSD 125 145 ºC
temperature
Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V

Normal Open load Shorted load Overheat Normal
TON 8 30 µs VBopr = 14V, IO = 1A
Output transfer time VIN
TOFF 15 30 µs VBopr = 14V, IO = 1A
VDH 4.5 6 V VCC = 6V VO

DIAG output voltage
VDL 0.3 V VCC = 6V, IDD = 2mA
TPLH 30 µs VBopr = 14V, IO = 1A DIAG

TPHL 30 µs VBopr = 14V, IO = 1A
Minimum load inductance L 1 mH

Mode VIN VO DIAG
Note: L L L
Normal H H H
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
(all terminals except, VB and GND, are open). L H H
Open load H H H
L L L
Shorted load H L L
L L L
Overheat H L L
● DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
26
■ Quiescent Circuit Current ■ Circuit Current ■ Saturation Voltage of Output Transistor

10 40 1.0
Ta = --40ºC
30 V B=
Ta = 25ºC 6 to 16V
VCE (sat) (V)

--40ºC
IB (mA)
Iq (mA)
25ºC 95ºC
5 95ºC 20 Ta = 95ºC 0.5
--40ºC
10
25ºC
0 0 0
0 10 20 30 40 0 10 20 30 40 50 0 1 2 3
VB (V) VB (V) IO (A)
■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC)
16 16 16
14 14 14
VB = VB =
12 VB = 12
14V 12 14V
14V
10 10 10
VO (V)
VO (V)
VO (V)
8 8 8
6 6 6
4 4 4
2 2 2
0 0 0
0 1 2 3 0 1 2 3 0 1 2 3
■ Threshold input voltage ■ Input Current (Output ON) ■ Input Current (Output OFF)
20 1.0 2
VIN = 5V VIN = 0V
Ta = VB = 14V
VB = 14V
95ºC 25ºC –40ºC
15 VB = 16V
I O = 1A
IIH (mA)
IIL (µA)
VO (V)
10 0.5 1
0 0 0
0 1 2 2.2 –40 0 50 100 –40 0 50 100
VIN (V) Ta (ºC) Ta (ºC)
■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics

0.2 16
VB = 14V Vo
14
DIAG
12 6
VB = 14V
VDG (sat) (V)
10 5
DIAG (V)
IO = 10mA
VO (V)
0.1 8 4
6 3
4 2
2 1
0 0
–40 0 50 100 0 50 100 150
Ta (ºC) Ta (ºC)
27

3.2 ±0.2
4 ±0.2
7.9 ±0.2
16.9 ±0.3
● Tj = 150ºC guaranteed
20 max
2.6 ±0.1
● TO220 equivalent full-mold package not require insulation mica a

b
+0.2
2.9 –0.3
0.94 ±0.15
Absolute Maximum Ratings (Ta = 25ºC)
R-end

+0.2
3.6 ±0.5
+0.2
0.85 –0.1 0.45 –0.1
Power supply voltage VB 40 V
P1.7 ±0.1 • 4 = 6.8 4 ±0.6
Input terminal voltage VIN –0.3 to VB V
DIAG terminal voltage VDIAG 6 V 1. GND a: Part No.

2. VIN b: Lot No.
Collector-emitter voltage VCE 40 V 3. VO
4. DIAG
Output current IO 1.8 A 5. VB
PD1 22 W With infinite heatsink (Tc=25ºC)
Power Dissipation (Forming No. 1123)
Storage temperature Tstg –40 to +150 ºC Standard Circuit Diagram

VB
5
VO
Electrical Characteristics (Ta=25ºC unless otherwise specified)
PZ
SI-5152S 3
VCC
Ratings
Parameter Symbol Unit Conditions VIN 2
min typ max DIAG
VBopr 6.0 30 V 4 5.1kΩ

Operating power supply voltage
LS-TTL
or
Load
Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V 1
CMOS
Saturation voltage of output 0.5 V IO 1.0A, VBopr = 6 to 16V
VCE (sat)
Truth table GND
Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V
VIN VO
Output ON VIH 2.0 VB V VBopr = 6 to 16V
Input voltage H H
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V L L
Input current

current Diagnostic Function
TTSD 150 ºC VBopr 6V
temperature
VIN
Output transfer time
TOFF 15 30 µs VBopr = 14V, IO = 1A VO
DIAG output leak current IDIAG 100 µA VCC = 6V, VBopr = 6 to 16V
Saturation voltage of DIAG output VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA DIAG
TPLH 30 µs VBopr = 14V, IO = 1A
Mode VIN VO DIAG
Minimum load inductance L 1 mH
Normal L L L
H H H
Note: L H H
Open load H H H
* The rule of protection against reverse connection of power supply is VB = –13V, one minute
L L L
(all terminals except, VB and GND, are open). Shorted load H L L
L L L
Overheat H L L
28

10 40 1.0
Ta = –40ºC
30 VB =
Ta = 25ºC 6 to 16V
VCE (sat) (V)

IB (mA)
–40ºC
Iq (mA)
25ºC 95ºC
5 95ºC 20 Ta = 95ºC 0.5
–40ºC
10
25ºC
0 0 0
0 10 20 30 40 0 10 20 30 40 50 0 1 2 3
■ Overcurrent Protection Characteristics (Ta = –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=100ºC)
16 16 16
14 14 14
VB = VB =
12 VB = 12
14V 12 14V
14V
10 10 10
VO (V)
VO (V)
VO (V)
8 8 8
6 6 6
4 4 4
2 2 2
0 0 0
0 1 2 3 0 1 2 3 0 1 2 3
20 1.0 2
VIN = 5V VIN = 0V
Ta = VB = 14V
95ºC 25ºC –40ºC VB = 14V
15 VB = 16V
IO = 1A
IIH (mA)
IIL (µA)
VO (V)
10 0.5 1
0 0 0
0 1 2 2.2 –40 0 50 100 –40 0 50 100
■ Saturation Voltage of DIAG Output

0.2
VB = 14V
VDL (V)
0.1
0
–40 0 50 100
Ta (ºC)
29
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

3.2 ±0.2
4 ±0.2
7.9 ±0.2
16.9 ±0.3
20 max
2.6 ±0.1
● Built-in Zener diode a

b
● TO220 equivalent full-mold package not require insulation mica
+0.2
2.9 –0.3
0.94 ±0.15
R-end
3.6 ±0.5
+0.2
0.85 –0.1 0.45 –0.1
Parameter Symbol Ratings Unit Conditions P1.7 ±0.1 • 4 = 6.8 4 ±0.6
Input terminal voltage VIN –0.3 to VB V 1. GND a: Part No.

2. VIN b: Lot No.
DIAG terminal voltage VDIAG 6 V 3. VO
4. DIAG
Refer to "Surge clamp voltage" 5. VB
Collector-emitter voltage VCE VB —VZ V
in Electrical Characteristics
(Forming No. 1123)

Power Dissipation

Operating temperature TOP –40 to +100 ºC VB
Storage temperature Tstg –40 to +150 ºC 5
VO
SI-5153S 3
VCC
Electrical Characteristics (Ta=25ºC unless otherwise specified) VIN 2
DIAG
Ratings
Parameter Symbol Unit Conditions 4 5.1kΩ
min typ max LS-TTL
or 1
Load
Operating power supply voltage VBopr 6.0 30 V CMOS
Quiescent circuit current Iq 5 12 mA VBopr = 14V, VIN = 0V

VCE (sat) 0.47 V IO 2.05A, VBopr = 6 to 16V GND
transistor Truth table
VIN VO
H H
Output ON VIH 2.0 VB V VBopr = 6 to 16V L L
Input voltage
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V
Input current
Overcurrent protection starting Diagnostic Function

current
temperature
VIN
TON 8 30 µs VBopr = 14V, IO = 1A VO

VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V DIAG

DIAG output voltage
VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

DIAG output transfer time Mode VIN VO DIAG
TPHL 30 µs VBopr = 14V, IO = 1A L L L
Normal H H H
Minimum load inductance L 1 mH L H H
Open load H H H
Surge clamp voltage *1 VZ 28 34 40 V IC = 5mA L L L
Shorted load H L L
L L L
Note: Overheat H L L
*1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). ● DIAG output will be undetermined when a voltage
* The rule of protection against reverse connection of power supply is VB = –13V, one minute. exceeding 25V is applied to VB terminal.
* This driver is exclusively used for ON/OFF control.
30

10 50 2
40
Ta =
–40ºC
VCE (sat) (V)

30 Ta =
Iq (mA)
IB (mA)
Ta = –40ºC 25ºC 125ºC
5 1
25ºC 20
150ºC 150ºC VB = 6 to 16V 25ºC
10 –40ºC
0 0 0
0 10 20 30 40 0 10 20 30 40 0 1 2 3
■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Overcurrent Protection Characteristics (Ta =25ºC) ■ Overcurrent Protection Characteristics (Ta=125ºC)
20 20 20
VB =
VB = VB = 18V
18V 18V
15 15 15
14V
14V
VO (V)
VO (V)
VO (V)
14V
10 10 10
8V
8V 8V
5 5 5
0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5
■ Threshold Characteristics of Input Voltage ■ Input Current (Output ON) ■ Input Current (Output OFF)
20 1.0 5
VB = 14V VB = 14V
VIN = 5V VIN = 0V
Ta = 150ºC 25ºC –40ºC 4
0.8
15
VB = 16V
IO = 1A
0.6 3
I IH (mA)
I IL (µA)
VO (V)
10
0.4 2
5
0.2 1
0 0 0
0 1 2 –50 0 50 100 150 –50 0 50 100 150
VIN (th) (V) Ta (ºC) Ta (ºC)
■ Output Terminal Leak Current ■ Saturation Voltage of DIAG Output ■ Thermal Protection Characteristics
2 0.5 20
VB = 14V VB = 14V VB = 14V
IDIAG = 2mA VDIAG = 5V
0.4 IO = 10mA
15 VO
IO leak (mA)
0.3
VDL (V)
VO (V)
1 10
0.2
VDIAG
5
0.1
0 0 0
–50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200
Ta (ºC) Ta (ºC) Ta (ºC)
31

3.2 ±0.2
4 ±0.2
7.9 ±0.2
16.9 ±0.3
20 max
2.6 ±0.1
● Built-in Zener diode a

● TO220 equivalent full-mold package not require insulation mica b
+0.2
2.9 –0.3
0.94 ±0.15
R-end
+0.2
3.6 ±0.5
+0.2
Parameter Symbol Ratings Unit Conditions 0.85 –0.1 0.45 –0.1
P1.7 ±0.1 • 4 = 6.8 4 ±0.6

1. GND a: Part No.
DIAG terminal voltage VDIAG 6 V 2. VIN b: Lot No.
3. VO
Refer to "Surge clamp voltage" in 4. DIAG
Collector-emitter voltage VCE VB –VZ V
Electrical Characteristics 5. VB
Output current IO 2.5 A (Forming No. 1123)
PD1 22 W With infinite heatsink (Tc =25ºC)

Power Dissipation

VB
5
VO
Electrical Characteristics (Ta=25ºC unless otherwise specified) SI-5154S 3

VCC
Ratings VIN 2
DIAG
min typ max 4 5.1kΩ
LS-TTL
Operating power supply voltage VBopr 6.0 30 V or 1
Load
CMOS

VCE (sat)
transistor 0.72 V IO 2.5A, VBopr = 6 to 16V GND
Truth table
Output leak current IO, leak 2 mA VCEO = 16V, VIN = 0V VIN VO
VBopr = 6 to 16V H H
Output ON VIH 2.0 VB V
Input voltage L L
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V
Input current

current
IS 2.6 A VBopr = 14V, VO = VBopr –1.5V Diagnostic Function
temperature Normal Open load Shorted load Overheat Normal
Open load detection resistor Ropen 30 kΩ VBopr = 6 to 16V VIN

TOFF 15 30 µs VBopr = 14V, IO = 1A VO
VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V
DIAG output voltage DIAG

Mode VIN VO DIAG
Minimum load inductance L 1 mH Normal L L L
H H H
Surge clamp voltage *1 VZ 28 34 40 V IC = 5mA Open load L H H
H H H
L L L
Note: Shorted load H L L
*1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). L L L
Overheat H L L
* The rule of protection against reverse connection of power supply is VB = –13V, one minute.
* This driver is exclusively used for ON/OFF control. ● DIAG output will be undetermined when a voltage
32

10 50 2
40 Ta =
–40ºC
Ta= –40ºC
VCE (sat) (V)

25ºC 30 25ºC
Iq (mA)
IB (mA)
5 150ºC Ta =
1
125ºC
20 150ºC
25ºC
VB = 6 to 16V
10 –40ºC
0 0 0
0 10 20 30 40 0 10 20 30 40 0 1 2 3
20 20 20
VB = VB =
VB =
18V 18V
18V
16 16 16
14V 14V
14V
12 12 12
VO (V)
VO (V)
VO (V)
8 8 8
8V 8V 8V
4 4 4
6V 6V 6V
0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5
20 1.0 5
VB = 14V VB = 14V
VIN = 5V VIN = 0V
Ta = 125ºC 25ºC –40ºC 4
0.8
15
VB = 16V
IO = 1A 0.6 3
I IH (mA)
I IL (µA)
VO (V)
10
0.4 2
5
0.2 1
0 0 0
0 1 2 –50 0 50 100 150 –50 0 50 100 150
2 0.5 20
VB = 14V VB = 14V VB = 14V
0.4 IO = 10mA
15 VO
IO leak (mA)
0.3
VDL (V)
VO (V)
1 10
0.2
VDIAG
5
0.1
0 0 0
–50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200
33

3.2 ±0.2
4 ±0.2
7.9 ±0.2
16.9 ±0.3
20 max
2.6 ±0.1
● TO220 equivalent full-mold package not require insulation mica a

b
+0.2
2.9 –0.3
0.94 ±0.15

R-end

+0.2
3.6 ±0.5
+0.2
0.85 –0.1 0.45 –0.1
P1.7 ±0.1 • 4 = 6.8 4 ±0.6
DIAG terminal voltage VDIAG 6 V 1. GND a: Part No.

2. VIN b: Lot No.
Collector-emitter voltage VCE 40 V 3. VO
4. DIAG
Output current IO 2.5 A 5. VB
Power dissipation (Forming No. 1123)

VB
5
VO
Electrical Characteristics (Ta=25ºC unless otherwise specified)
PZ
SI-5155S 3
VCC
Ratings
Parameter Symbol Unit Conditions VIN 2
min typ max DIAG
4 5.1kΩ
LS-TTL
or 1
Load
CMOS
VCE (sat)
Truth table GND
VIN VO
Output ON VIH 2.0 VB V VBopr = 6 to 16V
Input voltage H H
Output OFF VIL –0.3 0.8 V VBopr = 6 to 16V L L
Input current

current Diagnostic Function
temperature
TON 8 30 µs VBopr = 14V, IO = 1A VIN

VO
VDH 4.5 6 V VCC = 6V, VBopr = 6 to 16V
DIAG output voltage
DIAG
Minimum load inductance L 1 mH Mode VIN VO DIAG
Normal L L L
Note: H H H
* The rule of protection against reverse connection of power supply is VB = –13V, one minute L H H
Open load H H H
(all terminals except, VB and GND, are open). L L L
Shorted load H L L
L L L
Overheat H L L
34

10 50 2
40 Ta =
–40ºC
Ta= –40ºC
VCE (sat) (V)

30
Iq (mA)
IB (mA)
25ºC 25ºC
5 150ºC Ta =
1
125ºC
20 150ºC
25ºC
VB = 6 to 16V
10 –40ºC
0 0 0
0 10 20 30 40 0 10 20 30 40 0 1 2 3
■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta =125ºC)
20 20 20
VB = VB =
VB = 18V
18V 18V
16 16 16
14V 14V
14V
12 12 12
VO (V)
VO (V)
VO (V)
8 8 8
8V 8V 8V
4 4 4
6V 6V 6V
0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 0 1 2 3 4 5
20 1.0 5
VB = 14V VB = 14V
VIN = 5V VIN = 0V
Ta = 125ºC 25ºC –40ºC
0.8 4
15
VB = 16V
IO = 1A 0.6 3
I IH (mA)
I IL (µA)
VO (V)
10
0.4 2
5
0.2 1
0 0 0
0 1 2 –50 0 50 100 150 –50 0 50 100 150
2 0.5 20
VB = 14V VB = 14V VB = 14V
0.4 IO = 10mA
15 VO
IO leak (mA)
0.3
VDL (V)
VO (V)
1 10
0.2
VDIAG
5
0.1
0 0 0
–50 0 50 100 150 –50 0 50 100 150 0 50 100 150 200
35
High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

output status signals 31 ±0.2
Ellipse 3.2 ±0.15 • 3.8 4.8 ±0.2
● Low saturation PNP transistor use (VCE (sat) 0.2V) 24.4 ±0.2 1.7 ±0.1
● Allows direct driving using LS-TTL and C-MOS logic levels 3.2 ±0.15
● Built-in Zener diode in transistor eliminates the need of (or simplifies) external
12.9 ±0.2
16 ±0.2
surge absorption circuit
9.9 ±0.2
a 2.45 ±0.2
● Built-in independent overcurrent and thermal protection circuit in each circuit b
6.4 ±0.5
+0.2 +0.2 +0.2
1.15 –0.1 0.65 –0.1 0.55 –0.1
14 • P2.03 ±0.1 = (28.42)

Parameter Symbol Ratings Unit Conditions 31.3 ±0.2 a: Part No.
Power supply voltage VB –13 to +40 V b: Lot No.
Drive terminal applied voltage VD –0.3 to VB V

1 23 15
DIAG output applied voltage VDIAG –0.3 to +7.0 V
DIAG output source current IDIAG –3 mA

VB–O VB –34 V
and output terminal Equivalent Circuit Diagram
VB–D –0.4 V VB
and drive terminal

a b
Output reverse current IO –1.8 A
VIN d
Electrostatic resistance ES/A ±250 V C = 200pF, R = 0Ω c
e
Stand-alone without heatsink, f g
Power Dissipation PD 4.8 W OUT
all circuits operating
D
Operating temperature TOP –40 to +115 ºC MIC
Storage temperature Tstg –50 to +150 ºC GND FLT
a: Pre-regulator e: Overcurrent protection circuit

b: Overvoltage protection circuit f: Diagnostic circuit
Electrical Characteristics (VBopr =14V, Tj= –40 to +150ºC unless otherwise specified) c: Control circuit g: Thermal protection circuit
d: Driver circuit
Ratings
min typ max
Iq 0.8 1.6 mA Lo output

Quiescent circuit current (per circuit)
VB
Circuit current (per circuit) IB 19.3 mA Tj = 25ºC
Threshold input voltage VINth 0.8 3.0 V VCC
Hi output VIN 3.7 V

Input voltage 1 3 9 14
Lo output VIN 1.5 V
5 VB D1 D2 D3
IN1 4
Hi output I IN –1.0 mA VIN = 5V FLT1
Input current 7
IN2
Lo output I IN 100 µA VIN = 0V
SLA2501M FLT2 8
12 IN3
FLT3 13
Saturation voltage of output VCE (sat) 0.2 V IO 1.2A, VBopr = 6 to 16V GND1 GND2 OUT1 OUT2 OUT3
transistor 6 11 2 10 15
VCE (sat) 1.0 V IO 1.5A, VBopr = 6 to 16V
Output terminal sink current IO (off) 2.5 5 mA Tj = 25ºC, VCEO = 14V
29 34 39 V Tj = 25ºC, IC = 10mA
Surge clamp voltage VB–O
28 34 40 V IC = 5mA
Saturation voltage of DIAG output VDL 0.4 V IDGH = –2mA, VBopr = 6 to 16V
Leak current of DIAG output IDGH –100 µA VCC = 7V
Open load detection resistor Ropen 5.5 kΩ Diagnostic Function

IS 1.6 A VO = VBopr –1.5V
current Normal Open load Shorted load Overheat Normal

TTSD ºC VBopr 6V
VIN
temperature
TON 30 µs IO = 1A VO
TOFF 100 µs IO = 1A
TPLH 30 µs IO = 1A
VDIAG
TPHL 100 µs IO = 1A
Minimum load inductance Lo 1.0 mH
Maximum ON duty D(ON) 0 60 %
Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
36 * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
■ Quiescent Circuit Current (single circuit) ■ Circuit Current (single circuit) ■ Saturation Voltage of Output Transistor
5 40 1.0
VIN = 0V VIN = 5V V IN = 5V
Ta = –40ºC V B = 6 to 16V
4 Ta =150ºC
30
Ta = –40ºC Ta = 25ºC Ta =125ºC
Ta = 25ºC
VCE (sat) (V)

3
Iq (mA)
IB (mA)
Ta = 125ºC Ta = –40ºC
20 0.5
2 Ta = 125ºC
Ta = 25 ºC
10
1
0 0 0
0 10 20 30 40 0 10 20 30 40 0 1 2 3 3.5
20 20 20
VB = 14V V B = 14V VB = 14V

VO (V)
VO (V)
VO (V)
10 10 10
0 0 0
0 1 2 3 4 0 1 2 3 4 5 0 1 2 3 4
■ Threshold Input Voltage ■ Input Current (Output ON) ■ Input Current (Output OFF)
20 1.0 20
VB = 16V I OUT = 1A VB = 14V V IN = 0V V B = 14V V IN = 0V
Ta = 125ºC 25ºC –40ºC

IIH (mA)
IIL (µA)
VO (V)
10 0.5 10
0 0 0
0 1 2 3 4 --50 0 50 100 125 –50 0 50 100 125
■ Saturation Voltage of DIAG Output ■ Output Reverse Current ■ Thermal Protection

0.3 1.4 20 10
V B = 14V V B = 16V IO = 10mA
VIN = 5V 1.2 VO
I FLT = 3 (mA)
1.0
0.2 V FLT
VFLT (V)
0.8 Ta = --40ºC
VDL (V)
VO (V)
VF (V)
Ta = 25ºC 10 5
0.6 Ta = 125ºC
0.1
0.4
0.2
0 0 0
–50 0 50 100 125 0 1 2 3 4 0 60 100 160 180
Ta (ºC) IF (A) Ta (ºC)
37

output status signals 31±0.2
Ellipse 3.2 ±0.15 • 3.8 4.8 ±0.2
● Low saturation PNP transistor use (VCE (sat) 0.5V) 24.4 ±0.2 1.7 ±0.1
● Allows direct driving using LS-TTL and C-MOS logic levels 3.2 ±0.15
● Built-in overcurrent protection circuits

16 ±0.2
12.9 ±0.2
9.9 ±0.2
a 2.45 ±0.2
● Tj = 150ºC guaranteed b
6.4 ±0.5
1.15 –0.1
+0.2
0.65 –0.1
+0.2
0.55 –0.1
Parameter Symbol Ratings Unit Conditions 14 • P2.03 ±0.1 = (28.42)

31.3 ±0.2 a: Part No.
b: Lot No.
DIAG output applied voltage VDIAG –0.3 to +7.0 V
DIAG output source current IDIAG 3 mA 1 23 15
Stand-alone operation without

Power Dissipation PD 4.8 W
heatsink; all circuits operating

Storage temperature Tstg –50 to +150 ºC SLA2502M

The MIC is bound by the dotted lines. 8
VB
Pre. Reg.
2
Electrical Characteristics (VBopr =14V, Ta=25ºC unless otherwise specified) DIAG1
NI1
3
CONT.
11kΩ typ.
Drive
O.C.P
DIAG DET 1
Out1
Ratings
Parameter Symbol Unit Conditions T.S.D
min typ max
6 Drive
NI2 CONT.
Operating power supply voltage VBopr 6.0 16 V 5

11kΩ typ.
O.C.P
DIAG2
DIAG DET 7
Quiescent circuit current (per circuit) Iq 5 12 mA VIN = 0V 4
Out2
GND1
Threshold input voltage VINth 0.8 3.0 V
Hi output I IN 1.0 mA VIN = 5V Pre. Reg.

Input current NI3
10
Drive
µA
CONT.
Lo output I IN 0 100 VIN = 0V 11
11kΩ typ.
O.C.P
DIAG3
DIAG DET 9
Saturation voltage of output Out3
VCE (sat) 0.5 V IO 1.0A, VBopr = 6 to 16V T.S.D
transistor
14 Drive
NI4
Output terminal sink current IO (off) 2.0 mA VO = 0V, VIN = 0V CONT.
11kΩ typ.
13 O.C.P
DIAG4
DIAG DET
Saturation voltage of DIAG output VDL 0.3 V I DIAG = 3mA 15
Out4
12
GND4
Leak current of DIAG output IDGH 100 µA VDIAG = 5V
Open load detection resistor Ropen 30 kΩ [Abbreviations]

Overcurrent protection starting Drive: Drive circuit DIAG.DET.: Diagnostic circuit
IS 1.6 A VO = VBopr –1.9V CONT: ON/OFF circuit O.C.P.: Overcurrent protection
current Pre.Reg: Pre-regulator T.S.D.: Thermal protection
TON 8 30 µs IO = 1A
TOFF 15 30 µs IO = 1A
TPLH 10 30 µs IO = 1A
TPHL 15 30 µs IO = 1A
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute
VB
(all terminals except VB and GND should be open).
PZ
D1
Out
Diagnostic Function SLA2502M VCC

IN
DIAG
5.1kΩ
VB
Load
GND
3.0V
0.8V
VIN
GND Truth table
VIN VO GND
VOUT H H
GND
SHORT L L
OVER
Is VOLTAGE TSD
OPEN OPEN
Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN

IO
terminal. VOUT turns "L" when a high impedance is
connected to the IN terminal in series.
Note 2: Grounds GND1 and GND2 are not wired internally. They
GND VDIAG
must be shorted at a pattern near the product.
Normal Shorted load Open load Overvoltage Overheat
ERROR SIGNAL for CPU
38
■ Circuit Current (single circuit) ■ Circuit Current (4 circuits) ■ Saturation Voltage of Output Transistor
(VB = 14V)
60 200 1.0
Ta = VB
–40ºC
50
Ta =
150 –40ºC
25ºC
40 Ta =
VCE (sat) (V)

25ºC
25ºC 125ºC
IB (mA)
IB (mA)
30 100 0.5
125ºC
–40ºC
125ºC
20
VIN = 0V
50
10
VIN = 0V
0 0 0
0 10 20 30 40 46 0 10 20 30 40 46 0 1 2 3
■ Overcurrent Protection Characteristics (Ta=–40ºC) ■ Threshold Input Voltage ■ Input Current (Output OFF)
20 20 3
VB = VB = 14V
18V VIN = 0V
15 Ta =
15
125ºC
25ºC –40ºC 2
14V
I IL (µA)
VO (V)
VO (V)
10 10
1
5 5
6V
0 0 0
0 1 2 3 4 0 1 2 3 –50 0 50 100 150
IO (A) VIN (V) Ta (ºC)
■ Input Current (Output Hi) ■ Saturation Voltage of DIAG Output ■ Quiescent Circuit Current (dual circuit)
VIN = 0V
0.5 0.3 20
VB = 14V
VB = 14V
IDIAG = 3mA Ta = –40V
0.4 Ta = 25V
–40ºC
125V
25ºC 0.2
0.3
I IH (mA)
Iq (mA)
VDL (V)
125ºC 10
0.2
0.1
0.1
VO shorted
VO open
0 0 0
0 1 2 3 4 5 6 –50 0 50 100 150 0 10 20 30 40 46
VIN (V) Ta (ºC) VB (V)
■ Thermal Protection Characteristics ■ Output Terminal Leak Current (VO = 0V) ■ Open Load Detection Resistor
15 1.1 15
Ta =
–40ºC
1.0
25ºC
10 0.9 10
IOLEAK (mA)
ROPEN (kΩ)
TSD
Ta =
VO1 (V)
VB = 14V 125ºC 125ºC

RL = 1.3kΩ 0.8
25ºC
5 0.7 5 –40ºC
0.6
0 0.5 0
0 50 100 150 200 5 10 15 20 25 5 10 15 20
Ta (ºC) VB (V) VB (V)
39
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003

output status signals +0.1
10.5 ±0.2 1.0 –0.05
● DMOS 2ch output Fin
16 9 thickness
● Allows ON/OFF using C-MOS logic level
7.5 ±0.2
+0.2
2.0 –0.8
Parameter Symbol Ratings Unit Conditions 1 8
+0.15
Power supply voltage VB 35 V 1.27 ±0.25 0.4 –0.05
2.5±0.2
+0.15
Input terminal voltage VIN –0.3 to 7 V 0.25–0.05
Input terminal current I IN 5 mA
DG terminal voltage VDG –0.3 to 7 V
DG terminal current I DG 5 mA
Drain to source voltage VDS VB –45 V
Output current IO 1.8 A Block Diagram (for one channel)

Power dissipation PD 2 W Ta=25ºC VB
Source to drain Di forward current IF 0.8 A Bias

Thermal
Protect
Channel temperature Tch 150 ºC Clamp
Input Lavel Charge Current

Operating temperature IN
TOP –40 to +105 ºC Logic Shifting Pump Limit

Chopper
DG
Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) DG
Logic
Open/Short
Sense
Ratings
min typ max
GND OUT
Operating power supply voltage VB (opr) 5.5 35 V
Quiescent circuit current Iq 1 mA VIN=0V, VOUT=0V
200 mΩ IO=1A
Output ON resistance RDS (ON)
300 mΩ IO=1A, Ta=80ºC Standard Connection Diagram
Output leak current IO, leak 50 100 µA VOUT=0V
Input threshold Output ON VIHth 1.4 2.0 3.0 V Ta= –40 to +105ºC
voltage Output OFF VILth 1.0 1.8 V Ta= –40 to +105ºC 7,8 OUT1
15,16 OUT2
Output ON I IH 70 200 µA VIN=5V 1 VB 5V
Inpup current
Output OFF I IL 12 µA VIN=0V (2, 3) SPF5003 DG1
9 6
5V
Load
Load
(10,11) DG2
Overcurrent protection starting current IS 1.9 3 A VOUT =VO –1.5V
14
Vin 1 5 Vin 2 13 4 12
Internal current limit ILim 5 A VOUT=0V (7V max) (7V max)
GND
RIN
Thermal shutdown operating temperature TTSD 155 165 ºC
RDG
RDG
C
P RIN
Load open detection threshold voltage Vopen 3 4.5 V U
1.5
*1 TON 70 140 µs RL=14Ω, VO= –5V

Output transfer time * Rconnection
IN and RDG are needed to protect CPU and SPF5003 in case of reverse
of VB terminal.
TOFF 35 90 µs RL=14Ω, VO •10%
* Make VB of 1Pin and 9Pin short from the fin to be plated by solder.
DG leak current I DG 20 µA VDG= 5.5V
Low level DG output voltage VDGL 0.15 0.5 V IDG=1.6mA

Timing Chart
*1 TPLH 70 140 µs
DG output transfer time
TPHL 45 120 µs VIN ON VIN OFF VO open Normal OCP Normal TSD
Normal Open load Normal Shorted load Normal Over-

Note: 1. Transient time is showed Wave Form below. VB heat
*
VIN
VOUT
Recommended Operating Conditions (for one channel) Wave Form Internal current limit
TSDON
IOUT
Ratings
Parameter Unit VIN TSDOFF
min max DG High inpidance
VOUT –5V
Power supply voltage 5.5 16 V
VIH 4 5.5 V VOUT • 10%
VOUT Mode VIN DG VO
TON TOFF
VIL –0.3 0.9 V Normal H H H
L L L
VDG • 90%
IO 1 A DG output transfer time H H H
Open load L H H
VDG VDG • 10%
TPLH TPHL H L L (Limiting)
RIN 10 20 kΩ Shorted load L L L
H L L
RDG 10 20 kΩ Overheat L L L
40
41

● Built-in diagnostic function to detect short and open circuiting of loads and 17.28±0.2
output status signals 15.58±0.2
+0.1
1.0 –0.05
● DMOS 2ch output 24 13
Fin
thickness
10.5±0.3
a
7.5±0.2
b
+0.2
2.0–0.8
1 12
+0.15
1.27±0.25 0.4 –0.05
2.5±0.2
+0.15
0.25–0.05
Input terminal voltage VIN –0.3 to 7 V
Input terminal current I IN 5 mA

a: Part No.
DG terminal voltage VDG –0.3 to 7 V b: Lot No.

Power dissipation PD 2.7 W Ta=25ºC VB

Thermal
Protect

Operating temperature TOP –40 to +105 ºC IN Logic Shifting Pump Limit

Chopper
DG
Logic
Open/Short
Sense
Ratings
min typ max
GND OUT
Quiescent circuit current Iq 1 mA VIN=0V, VOUT=0V
150 mΩ IO =2A
250 mΩ IO =1A, Ta=80ºC Standard Connection Diagram
Output leak current IO, leak 50 µA VOUT =0V
Output ON VIH 2.0 3.0 V Ta= –40 to +105ºC

Input voltage
Output OFF VIL 1.0 1.8 V Ta= –40 to +105ºC 2,3 OUT1
14,15 OUT2
Inpup current Output ON I IH 70 µA VIN =5V 1 VB 5V
Overcurrent protection starting current IS 2.6 A VOUT =VO –1.5V (4,5,6) SPF5004 DG1
13 24
5V
Load
Load
DG2
Internal current limit ILim 10 A VOUT =0V (16,17,18)
12
23 Vin 2 11 21 9
Thermal shutdown operating temperature TTSD 155 165 ºC Vin 1
(7V max) (7V max)
GND
Vopen 3 V RIN
Load open detection threshold voltage
RDG
RDG
C
P RIN
TON 165 µs U
TOFF 60 µs
* Make VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin
DG leak current I DG 20 µA VDG =5.5V to be plated by solder.
Low level DG output voltage VDGL 0.15 V IDG =1.6mA
TPLH 70 µs
DG output transfer time Timing Chart
TPHL 45 µs
VIN ON VIN OFF VO open Normal OCP Normal TSD

VB heat
VIN
Recommended Operating Conditions (for one channel) VOUT

Internal current limit
Ratings
Parameter Unit
min max IOUT
TSDON
TSDOFF
Power supply voltage 5.5 16 V DG High inpidance
VIH 4 5.5 V
VIL –0.3 0.9 V

Mode VIN DG VO
IO 1.15 A Normal H H H
L L L
RIN 10 20 kΩ H H H
Open load L H H
RDG 10 20 kΩ H L L (Limiting)
Shorted load L L L
H L L
Overheat L L L
42
43

● Built-in diagnostic function to detect short and open circuiting of loads and 17.28±0.2
+0.1
output status signals 15.58±0.2 1.0 –0.05
Fin
● DMOS 3ch output 24 13 thickness

10.5±0.3
a
7.5±0.2
b
+0.2
2.0–0.8
Absolute Maximum Ratings (Ta=25ºC) 1 12
Parameter Symbol Ratings Unit Conditions +0.15
1.27±0.25 0.4 –0.05
2.5±0.2
Power supply voltage VB 35 V +0.15
0.25–0.05
Input terminal voltage VIN –0.3 to 7 V
Input terminal current I IN 5 mA a: Part No.

b: Lot No.
DG terminal voltage VDG –0.3 to 7 V

Power dissipation PD 2.7 W Ta=25ºC, all circuit operating VB

Thermal
Protect

Operating temperature TOP –40 to +105 ºC IN Logic Shifting Pump Limit

Chopper
DG
Logic
Open/Short
Sense
Ratings
min typ max
GND OUT
Quiescent circuit current Iq 1 mA VIN =0V, VOUT =0V
200 mΩ IO =1A
350 mΩ IO =1A, Ta=80ºC Standard Connection Diagram
Output leak current IO, leak 50 100 µA VOUT =0V
Input threshold Output ON VIHth 1.4 2.0 3.0 V Ta= –40 to +105ºC
5,6
voltage Output OFF VILth 1.0 1.8 V Ta= –40 to +105ºC 1 OUT1
10,11
13 VB OUT2
20,21
Output ON I IH 70 200 µA VIN =5V OUT3
Inpup current SPF5007 DG1

4
5V
Output OFF I IL 12 µA VIN =0V DG2

9
19
Load
Load
Load
DG3
GND1 GND2 GND3 IN1 IN2 IN3
Overcurrent protection starting current IS 1.9 3 A VOUT =VO –1.5V 2 7 17 3 8 18
RDG
Internal current limit ILim 5 A VOUT =0V
RDG
RDG C
Thermal shutdown operating temperature TTSD 155 165 ºC P
RIN U
RIN
Load open detection threshold voltage Vopen 1.5 3 4.5 V
RIN
TON 70 140 µs RL=14Ω, VOUT =VB –5V

Output transfer time * Rconnection
IN and RDG are needed to protect CPU and SPF5007 in case of reverse
TOFF 35 90 µs RL=14Ω, VB •10% of VB terminal.
* Make VB of 1Pin and 13Pin short from the fin to be plated by solder.
DG leak current I DG 20 µA VDG =5.5V
Low level DG output voltage VDGL 0.15 0.5 V IDG =1.6mA

Timing Chart
TPLH 70 140 µs
DG output transfer time
TPHL 45 120 µs VIN ON VIN OFF VO open Normal OCP Normal TSD

VB heat
VIN
VOUT
Recommended Operating Conditions (for one channel) Internal current limit
TSDON
IOUT
Ratings
Parameter Unit TSDOFF
min max DG High inpidance
Power supply voltage 5.5 16 V
VIH 4 5.5 V
Mode VIN DG VO
VIL –0.3 0.9 V Normal H H H
L L L
IO 1 A H H H
Open load L H H
RIN 10 20 kΩ H L L (Limiting)
Shorted load L L L
H L L
RDG 10 20 kΩ Overheat L L L
44
45
High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017

● Internal current sense resistor 14.74±0.2
● High accuracy current monitor output (sample & hold function) 13.04±0.2
+0.1
1.0 –0.05
● Built-in overcurrent and thermal protection circuits 20 11
Fin
thickness
10.5±0.3
7.5±0.2
Absolute Maximum Ratings (Ta=25ºC) b
2.0±0.2
1 10
Power supply voltage 1 VB 0 to 32 V
+0.15
1.27±0.25 0.4 –0.05
2.5±0.2
Power supply voltage 2 Vcc –0.5 to 7.0 V
+0.15
Power supply voltage 3 VB 0 to 40 V VB terminal, t = 1 min 0.25–0.05
Vsense+ –0.8 to 6
Current sensing voltage V a) Part No.
Vsense– Vsense+±Io • Rsense
b) Lot No.
Output terminal voltage VOUT –2 to 32 V
VPWM
Input terminal voltage –0.5 to 7.0 V
VHold
Output current IOUT 2.0 A Block Diagram (for one channel)
Power dissipation PD 2.4 to 5.0 W Depends on surface-mount board pattern Vcc
1
SFP5017
Storage temperature Tstg –40 to +150 °C VB
17
Channel temperature Tch 150 °C
clamp
D
Charge
OSC Pump
S
Sense
OUT
Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent PWM
TSD OCP
MOS
19
2 Sense+
Ratings 70kΩ
18
Parameter Symbol Unit Conditions CMOS Logic
Sense
min typ max Hold lamp +
R
3
70kΩ – 20
Min. operating power supply voltage VB min 6 V Minimum operation of OUT terminal. Sense–
S/H
Operating power supply voltage 1 VB 10 14 16 V *1 5 S/H
Operating power supply voltage 2 VCC 5.0 V *2 4 6

C LG
Quiescent circuit current 1 Iqvb 7.2 mA Vcc = 5V, VPWM = 0V, One circuit equivalent
Quiescent circuit current 2 Iqvcc 0.2 mA Vcc = 5V, VPWM = 0V
VPWMH 3.5
PWM terminal input voltage V Vcc = 5V
VPWML 1.5 Standard Connection Diagram
PWM terminal input current IPWMH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3
1
VHoldH 3.5 VCC 17
Hold terminal input voltage V Vcc = 5V VB
VHoldL 1.5
Hold terminal input current IHoldH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3
Controlling 19
OUT
0.14 Ω IOUT = 1A microcomputer 2
PWM SFP5017 18
Output ON resistance RDSon CPU Sense+
0.21 Ω IOUT = 1A, Ta = 125°C 3
Hold 20 D1
Sense –
0.21 Ω IOUT = 1A 1kΩ 5
S/H
Current sensing resistance Rsense 5.1 LG
C
0.25 Ω IOUT = 1A, Ta = 125°C 0.01
µF
kΩ
4 6
D2
Overcurrent protection starting current Is 3.0 A *4 C1
Thermal shutdown operating temperature Ttsd 150 °C * Use a Schottky Di for D2 when the Sense+ terminal
is lower than the abs. max. rated voltage (–0.8V)
Operation circuit for current monitor output Io 0.2 1.2 A *1
0.2 V Io = 0A, Vcc = 5V
0.488 0.500 0.512 V Io = 0.2A, Vcc = 5V
Current monitor output voltage VSH
1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C
Timing Chart
2.925 3.000 3.075 V Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C
Ordinary operation Thermal Ordinary operation Overcurrent Ordinary operation
(auto hold) protection (external hold) protection (auto hold)
5 mA Io = 1A, Vcc = 5V, VSH = 0V
Current monitor output current ISH
–6 mA Io = 1A, Vcc = 5V, VSH = 5V VPWM
t on 15 µs Vout
t off 15 µs
Io = 0.5A, Vcc = 5V Icoil
Output rise time tr 100 µs
Output fall time tf 50 µs VS/H *1 *1 *2
Current monitor output hold time t sh 500 650 µs 500 to 650 500 to 650
Io = 0.5A, Vcc = 5V, usec usec
Current monitor output delay time t shd 1 µs

C1 = 0.033µF VHold
Hold time after inputting hold t shh 2 µs
VB = 11V, Vcc = 5V, Io = 1.2A, Truth table
70 µs
C1 = 0.033µF
S/H settling time t stt VPWM L H
VB = 11V, Vcc = 5V, Io = 1.2A,
80 µs
C1 = 0.033µF, Ta = 125°C VOUT L H
Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70kΩ typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
46
47
High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018

● Internal current sense resistor 12.2±0.2
● High accuracy current monitor output (sample & hold function) 10.5±0.2 1.0 –0.05
+0.1
● Built-in overcurrent and thermal protection circuits 16 9

Fin
thickness
7.5±0.2
+0.2
2.0 –0.8
Power supply voltage 1 VB 0 to 32 V 1 8

+0.15
Power supply voltage 2 Vcc –0.5 to 7.0 V 1.27±0.25 0.4 –0.05
2.5±0.2
+0.15
Power supply voltage 3 VB 0 to 40 V VB terminal, t = 1 min 0.25–0.05
Vsense+ –0.8 to 6
Current sensing voltage V
Vsense– Vsense+±Io • Rsense
Output terminal voltage VOUT –2 to 32 V
VPWM
Input terminal voltage –0.5 to 7.0 V
VHold
Output current IOUT 2.0 A Block Diagram (for one channel)
Power dissipation PD 2.0 W Depends on surface-mount board pattern Vcc
2
VB
Storage temperature Tstg –40 to +150 °C 11
Channel temperature Tch 150 °C clamp
D
Charge
OSC
Pump
S
Sense
MOS OUT
Electrical Characteristics (VB=14V, Ta=25ºC unless otherwise specified) PWM
TSD OCP 14
3 Sense+
70kΩ
Ratings CMOS Logic
13
Parameter Symbol Unit Conditions Hold
Sense
min typ max 4
lamp +
R
70kΩ – 15
Min. operating power supply voltage VB min 6 V Minimum operation of OUT terminal. Sense–
S/H
Operating power supply voltage 1 VB 10 14 16 V *1 6 S/H
Operating power supply voltage 2 VCC 5.0 V *2 5 7

C LG
Quiescent circuit current 1 Iqvb 7.2 mA Vcc = 5V, VPWM = 0V
Quiescent circuit current 2 Iqvcc 0.2 mA Vcc = 5V, VPWM = 0V
VPWMH 3.5
PWM terminal input voltage
VPWML 1.5
V Vcc = 5V Standard Connection Diagram
PWM terminal input current IPWMH 70 110 µA Vcc = 5V, VPWM = 5V, Active H *3
2
VHoldH 3.5 VCC 11
VB
Hold terminal input voltage V Vcc = 5V
VHoldL 1.5
Hold terminal input current IHoldH 70 110 µA Vcc = 5V, VPWM = 5V, Active H * 3 14
Controlling OUT
0.14 Ω IOUT = 1A
microcomputer 3
PWM SFP5018 13
CPU Sense+
Output ON resistance RDSon 4
0.21 Ω IOUT = 1A, Ta = 125°C Hold
Sense–
15 D1
0.21 Ω IOUT = 1A 1kΩ 6

S/H
Current sensing resistance Rsense 0.01
5.1
kΩ C LG
0.25 Ω IOUT = 1A, Ta = 125°C µF
5 7
D2
C1
Overcurrent protection starting current Is 3.0 A *4
Thermal shutdown operating temperature Ttsd 150 °C * Use a Schottky Di for D2 when the Sense+ terminal
is lower than the abs. max. rated voltage (–0.8V)
Operation circuit for current monitor output Io 0.2 1.2 A *1
0.2 V Io = 0A, Vcc = 5V
0.488 0.500 0.512 V Io = 0.2A, Vcc = 5V
Current monitor output voltage VSH
1.219 1.250 1.281 V Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C
Timing Chart
2.925 3.000 3.075 V Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C
Ordinary operation Thermal Ordinary operation Overcurrent Ordinary operation
(auto hold) protection (external hold) protection (auto hold)
5 mA Io = 1A, Vcc = 5V, VSH = 0V
Current monitor output current ISH
–6 mA Io = 1A, Vcc = 5V, VSH = 5V VPWM
t on 15 µs Vout
t off 15 µs
Io = 0.5A, Vcc = 5V Icoil
Output rise time tr 100 µs
Output fall time tf 50 µs VS/H *1 *1 *2
Current monitor output hold time t sh 500 650 µs 500 to 650 500 to 650
Io = 0.5A, Vcc = 5V, usec usec
Current monitor output delay time t shd 1 µs

C1 = 0.033µF VHold
Hold time after inputting hold t shh 2 µs
VB = 11V, Vcc = 5V, Io = 1.2A, Truth table
70 µs
C1 = 0.033µF
S/H settling time t stt VPWM L H
VB = 11V, Vcc = 5V, Io = 1.2A,
80 µs
C1 = 0.033µF, Ta = 125°C VOUT L H
Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70kΩ typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
48
49
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

● DMOS 4ch output 12.2 ±0.2
● Allows ON/OFF using C-MOS logic level +0.1
10.5 ±0.2 1.0 –0.05
● Built-in overcurrent, overvoltage and thermal protection circuits Fin
16 9 thickness
7.5 ±0.2
(Ta=25ºC)
+0.2
2.0 –0.8
Output terminal voltage VOUT 37 V * 1 8
+0.15
Input terminal voltage VIN –0.5 to +7.5 V 1.27±0.25 0.4 –0.05
2.5 ±0.2
+0.15
Output current IO 1.8 A 0.25 –0.05
Power Dissipation PD 2 W
Channel temperature Tch 150 ºC
Output avalanche capability EAV 50 mJ Single pulse
Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

VB VOUT 1
Gate Protction
Electrical Characteristics (VB =14V, Ta=25ºC unless otherwise specified)

Reg. REF
Ratings OVP Gate Driver

min typ max TSD
OCP
Power supply voltage VBopr 5.5 25 V P-GND
VIN 1
Quiescent circuit current Iq 5 7 mA VIN = 0V (all inputs)
250 kΩ typ
Operating circuit current ICC 8 12 mA VIN = 5V (all inputs)
Hi output VIN 3.5 5.5 V IO = 1A

Input voltage VIN 2 VOUT 2
Lo output VIN –0.5 1.5 V
Hi output I IN 50 µA VIN = 5V VIN 3 VOUT 3

Input current
Lo output I IN 30 µA VIN = 0V
VIN 4 VOUT 4
0.4 0.6 Ω
0.5 0.7 Ω VB = 5.5V L-GND
Output clamp voltage VOUT (clamp) 41 50 55 V IO = 1A
Output leak current I OH 10 µA VO = 37V
Forward voltage of output stage

diode
VF 1.6 V I F = 0.5A Circuit Example
Overvoltage protection starting
VB (ovp) 25 40 V
voltage
Thermal protection starting VCC

TTSD 151 165 ºC
temperature
2 10 7 15 5
Overcurrent protection starting OUT1 OUT3 OUT2 OUT4 VB
IS 1.1 A 4
current IN1
6
IN2
TON 12 µs RL = 14Ω, I O = 1A 12
IN3 SPF5002A
Output transfer time 14
IN4
TOFF 8 µs RL = 14Ω, I O = 1A L-GND P-GND
CONTROL
UNIT
Output rise time Tr 5 µs RL = 14Ω, I O = 1A 13 1,9
Output fall time Tf 10 µs RL = 14Ω, I O = 1A
Use L-GND and P-GND being connected.

Truth table
VIN VO
H L
L H
Timing Chart
OVP
VB
VOUT
VIN
Normal Overvoltage Overheat Overcurrent
* Self-excited frequency is used in the overcurrent protection.

50
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
■ Quiescent Circuit Current ■ Circuit Current (single circuit) ■ Circuit Current (4 circuits)
10 10 10
8 8 8 Ta = 25ºC
Ta = 25ºC Ta = 25ºC Ta = –40ºC
Ta = –40ºC Ta = –40ºC
6 6 6
Iq (mA)
Id (mA)
Id (mA)
Ta = 125ºC
4 4 4
Ta = 120ºC Ta = 125ºC
2 2 2
0 0 0
0 10 20 30 40 0 10 20 30 40 10 20 30 40
VB (V) VB (V) VB (V)
■ Threshold Input Voltage ■ Output ON Voltage ■ Forward Voltage of Output Stage Diode
15 1.0 1.5
VB = 14V
0.8 Ta = 125ºC
Ta = –40ºC Ta = 25ºC
Ta = 25ºC Ta = –40ºC
10 1.0
Ta = 125ºC
VDS (ON) (V)
0.6 Ta = 125ºC
VO (V)
I F (A)
Ta = 25ºC
0.4
5 0.5
0.2
VO = 14V
IO = 0.1A Ta = –40ºC
0 0 0
0 1 2 3 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5
VIN (th) (V) IO (A) VF (V)
■ Overcurrent Protection Characteristics ■ Overvoltage Protection Starting Voltage

15 15
VB =14V IO = 0.1A
Ta = –40ºC
10 10 Ta = 25ºC
Ta = 125ºC
VO (V)
VO (V)
5 5
Ta = 120ºC
Ta = 25ºC
Ta = –40ºC
0 0
0 1.0 2.0 0 10 20 30 40
IO (A) VB (V)
51
Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

● DMOS 4ch output 17.28 ±0.2
+0.1
● Allows ON/OFF using C-MOS logic level 15.58 ±0.2 1.0 –0.05
Fin
● Built-in over current and thermal protection circuit and diagnostic function to 24 13 thickness
detect open load

● Built-in output status signals (over current, over heat and open load)
a
10.5 ±0.3
7.5 ±0.2
b
+0.2
2.0–0.8
1 12
+0.15
1.27 ±0.25 0.4 –0.05
2.5 ±0.2
+0.15
Output terminal voltage (DC) VOUT 50 V 0.25–0.05
Output terminal voltage (pulse) VOUT Output clamping (max 70V) V

a : Part No.
Output current (DC) IOUT ±2.9 A b: Lot No.
Output current (pulse) IOUT Over current protection starting current A
Input terminal voltage V( IN, SEL, B/U) –0.5 to +6.5 V Equivalent Circuit Diagram
Diag output source current VDIAG 6.5 V
VB Gate Protection VOUT1
(7) (4)
Diag output voltage I DIAG 5 mA Ref Reg
Power Dissipation PD 2.8 W Gate driver

VIN B/U
(17)
TSD
VOUT
Channel temperature Tch 150 ºC VIN SEL SENSE
(5)
Output avalanche capability EAV 80 mJ Single pulse OUT OCP Set

Latch Reset P-GND1
VIN 1 (1, 2)
(6) OSC
VDIAG1
Monitor (3)
VOUT2
(9)
Electrical Characteristics (VB =14V, Ta = 25ºC unless otherwise specified) VIN 2 P-GND2
(8) (11, 12)
Ratings VDIAG2
Parameter Symbol Unit Conditions (10)
min typ max
VOUT3
(16)
Power supply voltage VB (opr) 5.5 40 V
VIN 3 P-GND3
(18) (13, 14)
Quiescent circuit current Iq 9 12 mA VB =14V, VIN=0V
VDIAG3
(15)
Operating circuit current Id 12 15 mA VB =14V, VIN=5V (all inputs)
VOUT4
(21)
Input voltage VIN (H) 3.5 6.5 V VB =14V, VO=1A VIN 4 P-GND4
(20) (23, 24)
(1 to 4, SEL, B/U) VIN (L) –0.5 1.5 V VB =14V VDIAG4
(22)
Input current (single circuit) I IN (H) 200 µA VB =14V, VIN=5V L-GND

(19)
(1 to 4, SEL, B/U) I IN (L) 30 µA VB =14V, VIN=0V
Output ON resistance RDS (ON) 0.18 Ω VB =14V, IO=1A
Output clamp voltage VOUT (clamp) 60 65 70 V VB =14V, IO=1A
Output leak current I OH 50 µA VB =14V, VO=50V

Circuit Example
Forward voltage of output stage diode VF 1.5 V I F =1A
Output moniter threshold voltage Vt hM 2 V VB =14V
VDIAG (H) 6.4 6.5 V VB =14V, VDIAG=6.5V 7 4 9 16 21

DIAG output voltage
VDIAG (L) 0.5 V VB =14V, IDIAG=5mA VB OUT1 OUT2 OUT3 OUT4
6
VIN1
8 3
DIAG output leak current I DH 10 µA VB =14V, VDIAG=6.5V 18
VIN2 DIAG1
10
VIN3 DIAG2
Thermal shutdown operating temperature TTSD 151 165 ºC VB =14V
20
VIN4 SPF5009 DIAG3
15
17 22
VINB/U DIAG4
5
Overcurrent protection starting current IS 3.0 A VB =14V VINSEL
LG PG1 PG2 PG3 PG4
TON 12 µs VB =14V, RL=14Ω, I O=1A 19 1, 2 11, 12 13, 14 23, 24
TOFF 8 µs VB =14V, RL=14Ω, I O=1A
Output rise time Tr 5 µs VB =14V, RL=14Ω, I O=1A
Output fall time Tf 10 µs VB =14V, RL=14Ω, I O=1A
t DON 12 µs VB =14V, RL=14Ω, I O=1A Timing Chart

t DOFF 8 µs VB =14V, RL=14Ω, I O=1A
Main input signal 1
VIN1
Main input signal 2

VIN2
Backup input signal

VINB/U
Input select signal

VINSEL
Power supply voltage

VB
Output voltage 1
VOUT1
OCP OCP
Output current 1
IOUT1
DIAG output 1
VDIAG1
DIAG output 2
VDIAG2
Nomal Output 1 Output 1 Output 1 Nomal Output 1 Output 1 Output 1
Overheat Over current Open load Overheat Over current Open load
Main mode Backup mode
52
53
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012

17.28 ±0.2
● Output monitor circuit (DIAG) +0.1
15.58 ±0.2 1.0 –0.05
● DMOS 4ch output Fin
24 13
● Allows ON/OFF using C-MOS logic level thickness
● Built-in overcurrent, overvoltage and thermal protection circuits

a
10.5 ±0.3
7.5 ±0.2
b
2 ±0.2
Parameter Symbol Ratings Unit Conditions 1 12
+0.15
Power supply voltage 1 VB 40 V 1.27 ±0.25 0.4 –0.05
2.5 ±0.2
+0.15
Power supply voltage 2 VCC 7.5 V 0.25–0.05
Output voltage VO 40 (DC) V *1

Logic input voltage VIN –0.5 to +7.5 V a : Part No.
b: Lot No.
Output current IO Self Limited A
Diag output voltage VDIAG 0 to VCC V
Power Dissipation PD 2.8 to 5 W *2

Storage temperature Tstg –40 to +150 ºC VCC1-2
(7)
Channel temperature Tch 150 ºC Diag1

(5)
Output avalanche capability EAV 100 mJ Single pulse

VB
(19) Gate Protection
VOUT1
* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics Reg (3)
* 2. Changes by the patern of mounted substrate OVP
TSD Gate driver

VIN1
(4)
OCP
P. GND1
(1, 2)
Ch1
Electrical Characteristics (VB =14V, Ta = 25ºC unless otherwise specified)

Diag2
(8)
Ratings VIN2 VOUT2
Parameter Symbol Unit Conditions (9) (10)
min typ max P. GND2
Ch2 (11, 12)
Operating power supply voltage 1 VB (opr) 5.5 40 V VCC3-4

(18)
Operating power supply voltage 2 VCC (opr) 4.5 5.5 V Diag3
(17)
VIN3 VOUT3
Quiescent circuit current Iq 4 6 mA VB =14V, VIN=0V (16) (15)
P. GND3
Ch3 (13, 14)
Operating circuit current Id 8 12 mA VB =14V, VIN=5V
Hi output VIN 3.5 5.5 V VB =14V, VO=1A Diag4

Input voltage (20)
VIN4 VOUT4
Lo output VIN –0.5 1.5 V VB =14V (21) (22)
P. GND4
Hi output I IN 50 µA VB =14V, VIN=5V Ch4 (23, 24)
Input current L. GND

(6)
Lo output I IN –30 µA VB =14V, IO 1A
0.3 Ω VB =14V, IO=1A, Ta=125ºC

0.2 Ω VB =14V, IO=1A, Ta=25ºC
Output clamp voltage VOUT (clamp) 45 50 55 V VB =14V, IO=1A Circuit Example

VB =14V, VCC=5V, VIN=0V,
2.8 mA
VO =40V, Ta=25ºC
Output leak current I OH
VB =14V, VCC =5V, VIN=0V,
900 µA 7 18 19 3 10 15 22
VO =14V, Ta=25ºC
VCC1-2 VCC3-4 VB VOUT1 VOUT2 VOUT3 VOUT4
Forward voltage of output stage diode VF 1.6 V I F=1A Diag1
4 VIN1 5
VCC 9 VIN2 Diag2 8 Diag
Input
Overvoltage protection starting voltage VB (ovp) 25 40 V signal 16 VIN3 SPF5012 Diag3 17 output
21 VIN4 Diag4 20
Overvoltage protection hysteresis voltage VB (ovp•hys) 8 V
L-GND P-GND1 P-GND2 P-GND3 P-GND4
6 1, 2 11,12 13,14 23,24
Thermal shutdown operating temperature TTSD 151 165 ºC VB =14V
6 A VB =14V, Ta=–40ºC
Overcurrent protection Truth table
operating current IS 6 A VB =14V, Ta=25ºC
VIN VO
5 A VB =14V, Ta=125ºC Short L-GND and P-GND
H L
in a pattern near the product.
TON 12 µs L H
TOFF 8 µs
VB=14V, RL=14Ω, I O=1A
Output rise time Tr 5 µs
Output fall time Tf 10 µs
ra (DIAG) 0.195 0.2 0.205 VB =14V, VO =1 to 14V, Rdiag=500kΩ

Timing Chart
Output-diag voltage ratio
Diag output clamping voltage VDIAG (clamp) 4.85 V VB=14V, VCC=5V, VO =40V OVP
VB
VOUT
VIN
Normal Overvoltage Overheat Overcurrent
54 * Self-excited frequency is used in the overcurrent protection.

55
Stepper-motor Driver ICs SLA4708M

● High output breakdown voltage of 50V
31.0±0.2 Ellipse 3.2±0.15 • 3.8
● Affluent output current of 1.5A 3.2±0.15 24.4±0.2 4.8±0.2
● Built-in overcurrent, overvoltage and thermal protection circuits 16.4 ±0.2 1.7±0.7
● Low standby current of 50µA
Lead plate thickness

resins 0.8 max
16.0±0.2
13.0±0.2
8.5max
9.9±0.2
a
b
9.5min (10.4)
2.7
Pin 1 12
Power supply voltage VS 35 V +0.2
0.85 –0.1 +0.2
0.55 –0.1 2.2±0.7
1.2±0.15 ±0.15
Breakdown voltage VO 50 V 1.45
±0.7 ±1.0
Input voltage VIN –0.3 to +7 V 11•P2.54 =27.94
Output current IO, AVE 1.5 A 31.5 max
Diagnostic output sink current IDIAG 10 mA

a: Part No.
Diagnostic output withstand voltage IDIAG. H 7 V 1 2 3 4 5 6 7 8 9 10 11 12 b: Lot No.
Operating temperature Top –40 to +85 ºC
Power Dissipation PD 3.5 (Ta=25ºC) W Without heatsink

Electrical Characteristics (VS =12V, Ta=25ºC)
+
C ZD
Ratings
min typ max
Input voltage VIL 0.8 V

4 5 9 8 1
(I A/A, I B/B standby) VIH 2.4 V OUTA OUT A OUT B OUT B VS
12
DIAG
I IL –0.8 mA VIN = 0.4V I 3
A /A
Input current SLA4708M
CPU ZD: VS <35V
I IH 50 µA VIN = 2.4V I B/B 10
C 100µF
STBY
5V 2 P-GND (Reference)
L-GND L-GND
VO.STA 1.3 V I O = 1A, Ta = 25ºC 4.7 kΩ 6 11 7
Stepper
Output saturation voltage N.C.
VO.STA 1.5 V I O = 1.5A, Ta = 25ºC motor
Output leak current I O.LEAK 100 µA VO = 16V
Overcurrent detection I SD 1.8 A
Overvoltage detection VSD 27.5 V
Saturation voltage of diagnostic

VDIAG.L 0.3 V I DIAG = 5mA
output
Standby current I STB 50 µA VS = 12V
56
Stepper-motor Driver ICs SLA4708M
■ Power Supply Current Characteristics ■ Overvoltage Protection Characteristics ■ Saturation Voltage of Output Transistor Characteristics
20
Saturation voltage of output transistor Vsat (V)

200 14 2.0
Constant (ST = 5V) Ta = 25ºC Vcc (Vs) =16V Common for
Vcc=12V Ta =25ºC all phases
12
Common for 1.5

Power supply current
10
At Constant IS (mA)
all phases
At standby IS (µA)
8
100 10
6 1.0
4
At standby (ST = 0V)
0.5
2
0 0 0 0
0 10 20 30 0 10 20 30 35 0 1.0 2.0 3.0
Power supply voltage VS (V) Power supply voltage VS (V) Output current IO (A)
■ Thermal Protection Characteristics

14
Vcc (Vs) =12V
12 VST = 5V
10
8
T j2 T j1
6
0
0 110 120 130 140 150 160
Junction temperature Tj (ºC)
57
2-ph Stepper-motor Driver ICs SPF7211

● Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) 17.28±0.2
+0.1
● Built-in recovery diode 15.58±0.2 1.0 –0.05
Fin
● Built-in standby function 24 13 thickness
● Built-in overcurrent and thermal protection circuits and low voltage input shutoff function
● Built-in overload and disconnection detection function
a
10.5±0.3
7.5±0.2
Absolute Maximum Ratings b
2±0.2
1 12
Main power supply voltage VBB 40 V
+0.15
Input voltage VIN –0.3 to 15 V VIN VBB 1.27±0.25 0.4 – 0.05
±0.8
2.5±0.2
Io
Output current A +0.15
IoPeak ±1.0 Tw 1mS 0.25– 0.05
Flag terminal withstand voltage VFlag 7 V VFlag VBB
Flag terminal current IFlag 3 mA
Detect voltage VRs –2 to 2 V
a) Part No.
4.1 For Ta = 25°C * 1
Power dissipation PD W b) Lot No.
39 For Tc (Ttab) = 25°C
Junction temperature Tj 150 °C
Operating temperature Top –40 to 110 °C
Storage temperature Tstg –40 to 150 °C
Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm)

Recommended Operation Range
Parameter Symbol Ratings Unit Remarks Rs
Main power supply voltage VBB 6 to 18 V
Input voltage VIN –0.3 to 7.0 V VIN VBB
I20 24
Out2B 13
Output current Io ±0.5 A Continuous
I21
Ph2
FL1
GND
GND
GND
GND
Out2A
Rs2
FL2
Flag terminal withstand voltage VFlag 0 to 7.0 V VFlag VBB
Flag terminal current IFlag 0 to 1.0 mA µPC
Detect voltage VRs –1 to 1 V (ECU) SPM
12 Out1B
Out1A
GND
GND
GND
Ph1
Rs1
VBB
Set
1 I10
I11
Ct
Ratings Rs
Parameter Symbol min typ max Unit Conditions Ct VBB = 6 to 18V
IBB 50 mA In ordinary operation (no load) 2200pF
Main power supply current +
IBBS 50 µA At sleep Rs 1Ω typ (1 to 2W)
Low voltage protection operation voltage VUVLO 3.5 4.5 V IoM VRs/Rs
UVLO hysteresis voltage VUVLOhys 0.5 V
IoleakL –100 µA VBB = 40V, Vo = 0V
Output leak current
IoleakH 100 µA VBB = Vo = 40V Excitation Signal Time Chart
0.5 V Io = 0.5A 2-phase excitation
VsatL Clock 0 1 2 3 0 1
0.8 V Io = 0.8A
Output saturation voltage Ph1 L H H L L H
1.2 V Io = –0.5A
VsatH I10, I11 H H H H H H
1.5 V Io = –0.8A Ph2 L L H H L L
V FL 1.2 V Io = 0.5A I20, I21 H H H H H H
Recovery diode forward voltage V FH 1.3 V Io = –0.5A
VFGO 1.2 V Io = –0.5A 1 to 2-phase excitation
VIL 0.8 V Clock 0 1 2 3 4 5 6 7 0 1 2 3
Input voltage Ph1 L H H H H L L L L H H H
Input terminal VIH 2.0 V
Hysteresis voltage VIhys 0.5 V I10, I11 H L H H H L H H H L H H
Ph2 L L L H H H H L L L L H
IIL –5 5 µA
Ph terminal Input current I20, I21 H H H L H H H L H H H L
IIH –5 5 µA
* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph
IIL –30 µA VIL = 0.8V excitation (Ixx turns from high to low).
Ixx, Set terminals Input current
IIH 50 µA VIH = 2.0V The OPEN detection function is invalid except in this sequence.
660 700 740 mV Ix0 = High, Ix1 = High
Detect voltage VRs 420 450 480 mV Ix0 = Low, Ix1 = High
40 70 90 mV Ix0 = High, Ix1 = Low
Oscillation frequency Fosc 28.8 48 72 kHz Ct = 2200pF±20%
PWM frequency FPWM 14.4 24 36 kHz Ct = 2200pF±20%
VctL 0.5 V
Ct terminal threshold voltage
VctH 1.5 V
Ictsink 720 µA *1
Ct terminal current
Ictsouce –120 µA
VocpL 1.5 3.0 4.2 V Out voltage
VocpH VBB–2.5 VBB–2.0 VBB–1.7 V Out voltage
Overcurrent detection voltage
VocpL 1.0 1.85 V VBB = 5.5V
VocpH VBB–2.3 VBB–1.5 V VBB = 5.5V
Open detection voltage Vopen –60 mV Sence voltage
Flag terminal leak current IleakFlag 10 µA VFlag = 7V
Flag terminal saturation voltage VFlagL 0.5 V IFlag = 1mA
Flag terminal current IFlag 3 mA
Response pulse Tpw 10 µS In ordinary operation
width Tpws 100 µS At sleep
Set terminal
Pulse rate Fclock 17 24 31 Hz Ct = 2200pF
Pulse number Pulse 256 —
tocp1 2.5 5.0 10.0 µS In ordinary operation; Ct = 2200pF
OCP operation tocp2 5.0 10.0 20.0 µS At switching the phase
Flag response
tocp3 5.0 10.0 20.0 µS When Ixx shifts from L to H
time
topen1 2.5 5.0 10.0 µS In ordinary operation
Open operation
topen2 2.5 5.0 10.0 µS When Ixx shifts from L to H
tonH1 1.5 µS
toffH1 1.5 µS
tonH2 100 µS
toffH2 100 µS
I/O propagation time
tonL1 2.0 µS
toffL1 0.5 µS
tonL2 100 µS
toffL2 100 µS
Thermal protection temperature Tj 150 °C
Thermal protection hysteresis ∆Tj 20 °C
Thermal alarm temperature Talarm 120 130 140 °C *2
Thermal alarm hysteresis ∆Talarm 20 °C
Note:
58 *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.
*2: Thermal protection and alarm temperatures are design values.
2-ph Stepper-motor Driver ICs SPF7211
■ Vsat Temperature Characteristics (Io=0.5A) ■ Diode VF Characteristics (IF=0.5A)

1.2 1.7
VsatH VFGO
1 1.5
Saturation voltage Vsat (V)
Forward voltage VF (V)

0.8 1.3
0.6 1.1
VFH
0.4 VsatL 0.9
VFL
0.2 0.7
0 0.5
–30 –10 10 30 50 70 90 110 130 150 –30 –10 10 30 50 70 90 110 130 150
Junction temperature (ºC) Junction temperature (ºC)
■ OSC Temperature Characteristics ■ Ta-PD Characteristics

55 40
Infinite heatsink equivalent
(Tc=25°C)
Oscillation frequency FOSC (kHz)
j-tab 3.2°C/W
53
FOSC 30
51
20
49
10 Copper foil area

47 (5.0•7.4mm, t=18µm)
j-a 30.5°C/W
Ct=2200pF
45 0
–30 –10 10 30 50 70 90 110 130 150 0 25 50 75 100 125 150
Junction temperature (ºC) Ambient temperature Ta (ºC)
59
Full Bridge PWM Control DC Motor Driver ICs SI-5300

● P-ch MOS for high side and N-ch MOS for low side in one package (28.4) 4.8±0.2
● Enable to drive DC±5V
● Possible to drive a motor at the LS-TTL, C-MOS Logic level
2.7±0.2
● Guarantee Tj=Tch=150°C
16.1±0.2
● Built-in over current protection and thermal shut down circuits a
● Built-in diagnosis function to monitor and signal the state of each protection circuits b
(4.5)
(R0.8)
● Built-in vertical current prevention circuits (Dead time is defined internally.)
(4)
7.6±0.5
● No insulator required for Sanken's original package (SPM package) R-end
(R0.8)
3.6±0.5
+0.2
0.75–0.1 +0.2
0.45–0.1
14 • P2.03±0.1=(28.42)
2±0.5
Absolute Maximum Ratings 35±0.3
(Ta=25ºC) 4.5±0.7
Motor supply voltage VM 40 V

a: Part No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 b: Lot No.
IN1 –0.3 to 7 V
Input terminal voltage IN2 –0.3 to 7 V
PWM –0.3 to 7 V
Equivalent Circuit
IO ±5 A
Output current VM VM VM
IO (p-p) ±17 A PW 1ms, Duty 50%
B B
PWM control frequency fPWM 20 kHz Duty=20% to 80% Pre-Rec OCP OCP
Pch1 Pch2
Forward • reverse rotation switch frequency* fCW 500 Hz TSD A

OUT1
B
A FF
B
Operating temperature TOP –40 to +85 ºC Q S
R
M ECU inside
VCC
Junction and channel temperature Tj, Tch –40 to +150 ºC PULL-UP

Dead Resistor
IN1 Time OUT2 DIAG
Storage temperature Tstg –40 to +150 ºC Nch1 Nch2
PWM A DIAG
down A
j-c 3.7 ºC/W PWM edge
CONTROL
sense
Thermal resistance OCP OCP TDIAG
j-a 35 ºC/W B B CDIAG
Dead 1µF
IN2 Time
A
PD1 3.6 W Without heatsink
Power dissipation A LGND
PD2 33.7 W With infinite heatsink PGND PGND
Note: * The dead time for the length current prevention in positive and the reversing switch is set by
internal control IC. The set point in internal IC at the dead time is 20µs (typical).
Please take into account the dead time and consider the load conditions when you use the IC. Standard Connection Diagram
Relay
Electrical Characteristics (Unless, otherwise specified, Tj=Tch=25°C, VM =14V, IO =3A)
Capacitor
+ 3, 5, 13
VM 1, 2
Ratings 220µF
OUT1
min typ max
Battery
6 IN1 14, 15
Motor supply voltage VIN 6 18 V VM=24V (2 min.)
OUT2
V, VM-VO 0.8 V IO=3A CPU
11 IN2 M
Output saturation voltage
V, VO-PG 0.3 V IO=3A 7 PWM SI-5300
10 DIAG
I L, L 100 µA VM=40V
Output leakage current
I L, H 100 µA VM=40V VCC
8
9 4,12
Pull-up Resistor
tpLH 10 2
* µs VPWM: L H (Vth=2.5V typ) 10kΩ TDIAG LGND PGND
(Open Collector) Delay Capacitor
Output transmission time tpHL 15 *3 µs VPWM: H L (Vth=2.5V typ) 1µF
tpHL-tpLH 10 µs
0.8 V IO=3A
Forward voltage VF •L
1.0 V IO=10A
characteristic of diode
between drain and source 0.8 V IO=3A
VF •H
1.0 V IO=10A Timing Chart
Forward Forward Reverse Reverse Stop Stop
IM1 22 mA Stop mode Duty ON Duty OFF Duty ON Duty OFF (Free Run) (Free Run) Breake Breake
Therminal name
Static circuit current IM2 22 mA Forward and reverse mode
IN1
IM3 16 mA Brake mode
IN2
VIN, H 3.0 V VIN1=VIN2=VPWM
Input terminal voltage PWM
VIN, L 2.0 V VIN1=VIN2=VPWM
High inpidance
IIN, L –100 µA VIN1=VIN2=VPWM=0V OUT1
Input terminal current High inpidance
IIN, H 200 µA VIN1=VIN2=VPWM=5V OUT2
1
OPC start current IOCP 16 A * GND
IOUT (A)
High inpidance
DIAG output pulse width t DIAG 20 ms C=1µF (typ)

DIAG terminal voltage VD •L 0.3 V ID • SINK=1mA *4 Protection circuit Return to constant action
Note:
VM=2V
*1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the VM=2V
protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ➞ 0V: L) is input to the VM
terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed
to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). IN1
It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time. IN2
*2: Output transmission time (tpLH) *3: Output transmission time (tpHL) PWM
VPWM (5V) VPWM (5V)
VM-OUT1
PWM terminal (Pch1 VDS)
PWM terminal Vth
Vth Output transmission Output transmission VM-OUT2
VOUT (Pch2 VDS)
GND
time tpLH is time from time tpHL is time from
GND VOUT1-GND
VOUT*0.9 Vth (2.5V typ) of the Vth (2.5V typ) of the (Nch1 VDS)
OUT terminal terminal of PWM to OUT terminal terminal of PWM to VOUT2-GND
VOUT *0.1 (Nch2 VDS)
output (VOUT *0.9) of output (VOUT *0.1) of
GND OUT1
tpLH
the output terminal. tpHL
GND the output terminal.
OUT2
*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit. IOUT (A)
TDIAG
DIAG DIAG Threminal 20ms
60 VCC=5V Pull-up
(min)
Full Bridge PWM Control DC Motor Driver ICs SI-5300
■ Output saturation voltage (Pch) ■ Output saturation voltage (Nch) ■ Forward voltage of Diode between drain and source
1.0 0.5 12
VM=14V VM=14V Ta=25ºC
10
0.8 0.4
Ta=150ºC Nch
8 MOS FET
Ta=150ºC Ta=85ºC
V•VO -PG (V)

V•VM -VO (V)
0.6 0.3
Ta=25ºC
I FSD (A)
Ta=85ºC
6
Ta=25ºC Ta=–40ºC
0.4 Ta=–40ºC 0.2 Pch
4 MOS FET
0.2 0.1
2
0 0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2
I O (A) I O (A) VFSD (V)
■ Quiescent circuit current ■ Voltage of input terminal (Threshold voltage) ■ Current of input terminal (SINK current)
25 16 0.6
Duty on VM=14V VM=14V
Brake 0.5
20
12
Duty off Ta=150ºC
0.4
15 Ta=85ºC
I SINK (mA)
Stop Ta=150ºC
I M (mA)
VO (V)
Ta=25ºC
8 Ta=25ºC 0.3
Ta=–40ºC
10 Ta=–40ºC
0.2
4
5
0.1
I O=0A
Ta=25ºC
0 0 0
0 10 20 30 40 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
VM (V) VIN1, IN2, PWM (V) VIN1, IN2, PWM (V)
■ Current of input terminal (Source current) ■ VTDIAG – VDIAG Characteristics ■ Thermal shut down protection
Pull-up resistance =3kΩ
–12 6 6
I IN1=I IN2=PWM=0V VM=14V VM=10V
I O=0A
–10 5 5
Ta=150ºC
IIN1, IIN2, PWM source (µA)
Ta=25ºC
–8 4 Ta=150ºC 4
Ta=–40ºC Ta=25ºC
VDIAG (V)
VDIAG (V)
Ta=–40ºC
–6 3 3
–4 2 2
–2 1 1
0 0 0
0 10 20 30 40 0 1 2 3 4 5 6 100 125 150 175 200
VM (V) VTDIAG (V) Ta (ºC)
■ Pch MOS FET Safe Operating Area (SOA) ■ Nch MOS FET Safe Operating Area (SOA) ■ PD —Ta Characteristics
100 100 40
Tc=25ºC Tc=25ºC
Allowable Power Dissipation PD (W)
35 Infinite heatsink (Tc =25ºC)

1ms
1ms
30
10ms 25
10 10
I OUT (A)
I OUT (A)
10ms
20
100ms 15
100ms 10
1 1
5 No heatsink
0.3 0.3 0
2 10 40 100 2 10 40 100 –40 –30 0 25 50 75 100
VM-OUT (V) VOUT -PG (V) Ambient temperature Ta (ºC)
61
Full Bridge DC Motor Driver ICs SPF7301(under development)

● A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side +0.1
14.74±0.2 1.0 –0.05
power elements Fin
±0.2 thickness
● Two input signals control the forward/reverse/brake of a DC motor 13.04
● Current limit and overcurrent protection circuits 20 11
● Low voltage and thermal protection, excess input detecting output and input
10.5±0.3
terminal open protection a
7.5±0.2
b
2±0.2
Parameter Symbol Ratings Unit Remarks 1 10
+0.15
+0.15 0.25–0.05
Main power supply voltage VB –0.3 to 36 V 1.27±0.25 0.4 – 0.05
2.5±0.2
Input terminal input voltage VIN1,VIN2 –0.3 to 6 V
EN terminal voltage VEN –0.3 to 12 V
Disable terminal input voltage VDI –0.3 to 6 V
Io ±7 A a) Part No.
Output current b) Lot No.
IoPeak ±15 A 1kHz, Duty 1%, Pulse 10µS
DIAG output current VDIAG –0.3 to 6 V
DIAG inflow current IDIAG –3 mA DIAG terminal sink current
P D1 39 W With an infinite heatsink mounted
Power dissipation
P D2 4 W *1
Junction temperature Tj –40 to 150 °C
Storage temperature Tstg –40 to 150 °C
Thermal resistance
(junction to case) j-c 3.2 °C/W Standard Circuit Diagram
Thermal resistance
(junction to ambient air) j-a 31 °C/W Vcc
EN CP
Ccp RDIAG
Note: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm) VB DIAG
Power IN1
supply
Full Brige Driver IC
OUT1
Recommended Operation Range IN2
DI SFP7301 M
Parameter Symbol Ratings Unit Remarks OUT2
R1
Main power supply voltage VB 8 to 18 V Cin R2
RDI
DI terminal input voltage VDI –0.3 to 5.3 V PGND LGND
Input terminal input voltage VINx –0.3 to 5.3 V
Output current Io ±1 A
DIAG terminal voltage VDIAG –0.3 to 5.3 V
Operating temperature Top –40 to 105 °C * Recommended connection parts
Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF
DIAG terminal pull-up resistance RDIAG: 20kΩ
Input terminal pull-down resistance R1, R2, RDI: 10kΩ
(Tj = 30 to 125°C, VB = 14V, EN = DI = 5V, Ccp = 33nF,
Electrical Characteristics RDIAG = 20kΩ unless otherwise specified) * 2
Ratings
min typ max
IBB1 15 mA
Main power supply current
IBB2 100 µA For VEN = 0V
Low voltage protection VuvloH 5.0 7.0 V
operation voltage VuvloL 4.5 6.5 V
UVLO hysteresis voltage ∆UVLO 0.5 V
IleakHS –100 µA
Output terminal leak current
IleakLS 100 µA
RDS(ON)_1H 100 200 mΩ
RDS(ON)_2H 100 200 mΩ
Output DMOS RDS (ON)
RDS(ON)_1L 100 200 mΩ
RDS(ON)_2L 100 200 mΩ
VF_H1 1.5 V Io1 = 1A
Forward voltage VF_H2 1.5 V Io2 = 1A
characteristics between
output DMOS and DS VF_L1 1.5 V Io1 = –1A
VF_L2 1.5 V Io2 = –1A
Iocp1_H1 4.5 7 10 A
Overcurrent limiting Iocp1_H2 4.5 7 10 A
operation current Iocp1_L1 4.5 7 10 A
Iocp1_L2 4.5 7 10 A
Iocp2_H1 15 A
Iocp2_H2 15 A
OPC start current
Iocp2_L1 15 A
Iocp2_L2 15 A
Input terminal voltage VINxH 2 V
VIN1, VIN2 VINxL 0.8 V
Input terminal current IINxH –100 µA VDI = 5V
VIN1, VIN2 IINxL –100 µA VDI = 0V
VDIxH 2 V
DI terminal voltage
VDIxL 0.8 V
IDIxH –100 µA VDI = 5V
DI terminal current
IDIxL –100 µA VDI = 0V
EN terminal input voltage VENth 0.8 4 V
IENH 100 µA VEN = 5V
EN terminal input current
IENL –10 10 µA VEN = 0V
DIAG terminal output voltage VDIAG 0.8 V IDIAG = 0.5mA
DIAG terminal output current IDIAG 1.5 mA For VDIAG = 1.6V
DIAG terminal leak current IDIAGL –10 15 µA
TdON 20 µS Time from VINxH to Voutx•0.2
TdOFF 15 µS Time from VINxL to Voutx•0.8
Input delay time Tr 6 µS Time of Voutx from 20% to 80%
Tf 6 µS Time of Voutx from 80% to 20%
Tddis 4 µS Time from DIthH to Voutx•0.2
Overvoltage protection operation voltage VOVP 35 40 45 V
OVP hysteresis width ∆VOVP 5 V
Thermal protection starting temperature Ttsd_ON 151 165 °C *3
Thermal protection hysteresis width ∆Ttsd 15 °C *3
Note:
*2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values.
62 *3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.
63
High Voltage Full Bridge Drive ICs SLA2402M

● One Package Full Bridge Driver Consisted of High Voltage IC and Power
31.0 ±0.2
MOS FETs (4 pieces) 3.2 ±0.15 24.4 ±0.2 Ellipse 3.2 ±0.15 •3.8 4.8±0.2
● High Voltage Driver which accepts direct connection to the input signal line 16.4 ±0.2 1.7±0.1
● External components such as high voltage diodes and capacitors are not required

resins 0.8 max
16.0±0.2
13.0±0.2
8.5 max
a
9.9±0.2
b
9.5 min
2.7
+0.2 +0.2
Power source voltage * VM 500 V 0.65 –0.1 1.0 –0.1 2.45±0.2
+0.2
Input voltage 17• P1.68 ±0.1 =28.56 0.55 –0.1
VIN 15 V
Output voltage VO 500 V 31.5 max
Output current IO 15 A PW 250µs

a: Part No.
Power dissipation PD 5 (Ta=25ºC) W Without heatsink b: Lot No.
Operation temperature Topr –40 to +105 ºC
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Block Diagram
Ratings
min typ max 7
+12V
Power MOS FET output BVOUT 500 V IO=100µA 4 D1

MOSQ1
VCC
MOSQ2
15
breakdown voltage HO1 HO2
OUT1 MIC OUT2

Power MOS FET output MOSQ'1 MOSQ'2
IOUT (off) 100 µA VO=500V 2
LO1 LO2
17
leakage voltage GL1
VIN1 –HV VIN2 L GND
GL2
VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VIN=10V

High-side Power MOS FET
output on-state voltage
VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VIN=10V 3 6 8
10
9 11
13 16
VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VGL=10V CPU

Low-side Power MOS FET
output on-state voltage VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VGL=10V
* Dotted Line: Outside Connection
ICC 1 3.0 mA VCC=4.5 to 15V
Quiescent circuit current
ICC 2 4.0 mA VCC=10V, VM=400V
Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V
VIH 0.8VCC V VCC=4.5 to 15V

Input voltage (High level)
Timing Chart
Input voltage (Low level) VIL 0.2VCC V VCC=4.5 to 15V
t d (on) 1.4 µs
VCC=10A, VIN=10V,
Ignition OSC 400Hz
Delay time * t d (off) 3.3 µs VM=85A, VCC
∆t 2.5 µs IO=0.41A
IN1
Operating voltage VCC 15 V –40 to +105ºC

IN2
* About delay time HO1

Signal input waveform vs output waveform
LO2
1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off
HO2
VIN1 VIN1
10% 10% 10% 10%
0V 0V LO1
—HV
0V 0V
0V
10% 10% –100V
10% VOUT2
VOUT1 10%
OUT2-GND –400V
td (on) td (on) td (on) td (on)
* ∆t: ∆t = td (on) – td (off)
Measurement Circuit Conditions

VCC=10V, VIN=10V (pulse)
VIN1 RL VIN2 VM=85V
IO=0.41A (RL=207Ω)
VOUT1 VOUT2
* When pulse signal is inputted to VlN1,

VIN2 VIN1
RL on solid line is ON and dotted line
RL is off.
VM
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.
64
■ Quiescent circuit current ■ Quiescent circuit current supplied high voltage ■ Operating circuit current
3.0 3.0 3.0
150ºC VIN=0V VCC=VIN1(2)=10V
VIN=0V 150ºC
VCC=10V
Operating circuit current ICC3 (mA)

Quiescent circuit current ICC2 (mA)
105ºC
2.5 2.5 2.5

105ºC
2.0 25ºC 2.0 150ºC 2.0

105ºC
25ºC
1.5 1.5 1.5
–40ºC –40ºC
25ºC
1.0 1.0 1.0
–40ºC
0.5 0.5 0.5
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500
Operation voltage VCC (V) High voltage VM (V) High voltage VM (V)
■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current ■ Operating circuit current
5 3.0 3.5
VIN=0V Ta=25ºC VCC= Ta=25ºC VCC=

VM=400V 3.0
2.5 15V 15V

4 150ºC
105ºC 2.5
2.0
3 12V
12V 2.0
25ºC
1.5
10V
1.5
2 10V 9V
–40ºC 1.0 9V
1.0
1
0.5 0.5
4.5V 4.5V
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500
■ Output on-state voltage ■ Gate drive voltage ■ Gate drive voltage

10 10 10
Ta=25ºC
VCC =VIN =10V VCC=10V
Output on-state voltage (V)
8 8 8 VCC=15V
Gate drive voltage VGL (V)
VCC=9V
150ºC
6 6 6
105ºC
4 4 4 VCC=
4.5V
25ºC
2 2 2
–40ºC
0 0 0
0 1 2 3 4 –50 0 50 100 150 0 5 10 15
Output current (A) Ambient temperature (ºC) Input voltage VIN (V)
■ Output on-state voltage ■ Input threshold voltage

5 8
VCC=VIN=10V VCC=10V
7
Input threshold voltage VIH, VIL (V)
VIH
Output on-state voltage (V)
4
6
3 5
I O=2A 4 VIL
2 3
2
1
I O=0.4A 1
0 0
–50 0 50 100 150 –50 0 50 100 150
Ambient temperature (ºC) Ambient temperature (ºC)
65
■ High side switch turn-on, off ■ High side switch turn-on, off ■ Low side switch turn-on, off
5.0 5.0 5.0
Ta=25ºC VM=85V, I O=0.41A Ta=25ºC
VM=85V, I O=0.41A VCC=10V VM=85V, I O=0.41A
4.0 4.0 turn-off 4.0
turn-on, off (µs)
turn-on, off (µs)
turn-on, off (µs)

turn-off turn-off
3.0 3.0 3.0
2.0 2.0 2.0
turn-on turn-on
1.0 turn-on 1.0 1.0
0 0 0
4 6 8 10 12 14 16 –50 0 50 100 150 4 6 8 10 12 14 16
Operation voltage VCC (V) Ambient temperature (ºC) Operation voltage VCC (V)
■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET)
5.0 100 100
VM=85V, I O=0.41A
VCC=10V RDS (on)
Transient thermal resistance (ºC/W)
turn-off limited
4.0 10
10
100µs
Drain current (A)

turn-on, off (µs)
3.0 1
1ms
1
2.0 0.1 10ms

turn-on
0.1
1.0 0.01
Ta=25ºC Ta=25ºC
Single pulse Single pulse
0 0.001 0.01
–50 0 50 100 150 0.0001 0.001 0.01 0.1 1 10 100 10 100 1000
Ambient temperature (ºC) Power time (s) Drain to source voltage (V)
■ Power derating curve

6
without heatsink
5
Power dissipation (W)
0
–50 0 50 100 150
Ambient temperature (ºC)
66
67

31.0 ±0.2
MOS FETs (4 pieces) 3.2 ±0.15 24.4 ±0.2 Ellipse 3.2 ±0.15 •3.8 4.8±0.2
● High Voltage Driver which accepts direct connection to the input signal line 16.4 ±0.2 1.7±0.1
● External components such as high voltage diodes and capacitors are not required

resins 0.8 max
16.0±0.2
13.0±0.2
8.5 max
a
9.9±0.2
b
9.5 min
2.7
+0.2 +0.2
Power source voltage * VM 500 V 0.65 –0.1 1.0 –0.1 2.45±0.2
+0.2
Input voltage 17• P1.68 ±0.1 =28.56 0.55 –0.1
VIN 15 V
Output voltage VO 500 V 31.5 max
IO 7 A Tc=25ºC
Output current a: Part No.
IO (peak) 15 A PW 250µs b: Lot No.
5 (Ta=25ºC) W Without heatsink
Power dissipation PD
40 (Tc=25ºC) W With infinite heatsink
Operation temperature Topr –40 to +125 ºC
Junction temperature Tj 150 ºC

Block Diagram
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Electrical Characteristics 4 D1
MOSQ1
VCC
MOSQ2
D2 15
HO1 HO2
Ratings 5 OUT1 MIC OUT2 14

MOSQ'1 MOSQ'2
Parameter Symbol Unit Conditions 3 LO1 LO2 16
min typ max GL1
VIN1 –HV VIN2 L GND
GL2
Power MOS FET output BVOUT 500 V IO=100µA

breakdown voltage
Power MOS FET output IOUT (off) 100 µA VO=500V 2 6 8 10 9 11 13 17

leakage voltage CPU
High-side Power MOS FET VOUT (on) 0.18 0.26 0.34 V IO=0.4A, VIN=10V * Dotted Line: Outside Connection
Lowside Power MOS FET VOUT (on) 0.18 0.26 0.34 V IO=0.4A, VGL=10V
ICC 1 3.0 mA VCC=6 to 15V

ICC 2 4.0 mA VCC=10V, VM=400V
Timing Chart
Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V
Input voltage (High level) VIH 0.8VCC V VCC=6 to 15V

Ignition OSC 400Hz
Input voltage (Low level) VIL 0.2VCC V VCC=6 to 15V VCC
t d (on) 2.0 µs VCC=10A, VIN=10V, IN1

Delay time *
t d (off) 3.0 µs VM=85V, IO=0.41A
IN2
Operating voltage VCC 6 15 V –40 to +125ºC
HO1
* About delay time LO2

HO2
LO1
VIN1 VIN1
10% 10% 10% 10% —HV
0V 0V 0V
–100V
0V
0V
10% 10% OUT2-GND –400V
10% VOUT2
VOUT1 10%
td (on) td (on) td (on) td (on)
* ∆t: ∆t = td (on) – td (off)
Measurement Circuit Conditions

VIN1 RL VIN2 VM=85V
IO=0.41A (RL=207Ω)
VOUT1 VOUT2
VIN2 VIN1
* When pulse signal is inputted to VlN1,
VM
RL is off.
68
3.0 3.0 4.0
VIN=0V VCC=VIN1(2)=10V
VIN=0V 150ºC VCC=10V

3.5

2.5 125ºC 2.5 150ºC

150ºC
85ºC 3.0
125ºC
2.0 2.0 125ºC
25ºC 2.5
85ºC 85ºC
1.5 1.5 2.0
25ºC 25ºC
–40ºC
1.5
1.0 1.0
–40ºC 1.0 –40ºC
0.5 0.5
0.5
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500
■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current supplied high voltage ■ Operating circuit current
5 3.5 4.0
150ºC Ta=25ºC
VIN=0V Ta=25ºC
VCC= VCC=

VM=400V 3.5
125ºC 3.0
4 15V 15V
85ºC 3.0
2.5
3 2.5
25ºC 2.0 12V
12V
2.0
1.5 10V
2 10V 1.5
–40ºC 9V
9V
1.0
1.0
1 6V 6V
0.5 0.5
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500
■ Output on-state voltage ■ Input threshold voltage ■ Gate drive voltage

6 10 10
Ta=25ºC
VOUT (ON) (V)
VCC=VIN=10V
VCC=15V
5 VCC=10V
Input threshold voltage VIH (V)
8 8 VCC=10V
150ºC
4
125ºC 6 6 VCC=
Output on-state voltage
6V
3 85ºC VCC=6V
4 4
2 25ºC
–40ºC 2 2
1
0 0 0
0 1 2 3 4 –50 0 50 100 150 200 0 5 10 15
Output current I OUT (A) Ambient temperature (ºC) Input voltage VIN (V)

4 7 10
VCC=VIN=10V
Output on-state voltage VOUT (ON) (V)
6
Input threshold voltage VIL (V)
8
3 VCC=10V
5
6
I O=2A 4
2
VCC=10V
3 4 VCC=6V
2
1 VCC=6V
2
I O=0.4A 1
0 0 0
–50 0 50 100 150 –50 0 50 100 150 –50 0 50 100 150
Ambient temperature (ºC) Ambient temperature (ºC) Ambient temperature (ºC)
69
5.0 5.0 5.0
Ta=25ºC VM=85V, I O=0.41A Ta=25ºC
VM=85V, I O=0.41A VCC=10V VM=85V, I O=0.41A
4.0 4.0 4.0
turn-off
turn-on, off (µs)
turn-on, off (µs)
turn-on, off (µs)

3.0 turn-off 3.0 3.0 turn-off
2.0 2.0 2.0

turn-on
turn-on
turn-on
1.0 1.0 1.0
0 0 0
4 6 8 10 12 14 –50 0 50 100 150 4 6 8 10 12 14
■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ Safe operating area (Power MOS FET)
5.0 100 100
VM=85V, I O=0.41A RDS (on)
VCC=10V limited
10µs
4.0 10 100µs
10
Drain current (A)

turn-on, off (µs)
turn-off
3.0 1 1ms
1
2.0 0.1 10ms

turn-on
0.1
1.0 0.01
Ta=25ºC Ta=25ºC
Single pulse Single pulse
0 0.001 0.01
–50 0 50 100 150 0.001 0.01 0.1 1 10 100 10 100 1000
Ambient temperature (ºC) Power time (s) Drain to source voltage (V)

50
Tc=25ºC
40
PD (W)
30
Power derating
20
10
without heatsink
0
–50 0 50 100 150
70
71
High Voltage Full Bridge Drive ICs SMA2409M

31.0 ±0.2 4.0±0.2
IGBT (4 pieces)
● High Voltage Driver which accepts direct connection to the input signal line
b
10.2±0.2
2.7±0.2
a
Absolute Maximum Ratings (Ta = 25°C)
(10.4)
Power supply voltage VM 500 V Power GNG to HV
Input voltage VIN 15 V
+0.2 +0.2
Operation voltage Vcc 15 V 1.16 –0.1 0.65 –0.1
+0.2
14 • P2.03 ±0.1= (28.42) 0.55 –0.1 1.2 ±0.2
Output voltage Vo 500 V
(root dimensions) (root dimensions)
Output current (DC) Io(DC) 7 A
Output current (pulses) Io(pulse) 15 A Single pulse (PW = 50µs max.) 31.3 ±0.2
4 a: Part No.
Power dissipation PD W b: Lot No.
20 Tc = 25°C
j-a 31.2
Thermal resistance °CW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
j-c 6.2 Tc = 25°C
Operating temperature Topr –40 to +105 °C
Storage temperature Tstg –40 to +150 °C
Junction temperature Tj 150 °C
IGBT single pulse
EAS 5 mJ VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A
Block Diagram
avalanche resistance
ESD protection ESD ±2 kV Human body model (C = 100pF, R = 1.5kΩ)
6
Electrical Characteristics (Ta = 25°C) IGBT Q2
4 IGBT Q1 VCC D2
D1 12
HO1 HO2
Ratings
Parameter Symbol Unit Conditions OUT1 MIC OUT2
min typ max 2 IGBT Q'1
LO1 LO2
IGBT Q'2
GL2 14
GL1 VIN1 –HV VIN2 L GND
IGBT output breakdown voltage BVOUT 570 V Io = 100µA, Tj = 25°C
IGBT output leak current IOUT (off) 100 µA Vo = 500V
1.0 1.2 V Io = 0.4A, VIN (or VGL) = 10V
IGBT output ON voltage VOUT (on)
3 5 7 9 8 10 11 13
1.3 1.8 V Io = 2.0A, VIN (or VGL) = 10V
CPU
Icc1 3.0 mA Vcc = 10V, VM = VIN = 0V
Icc2 4.0 mA Vcc = 10V, VM = 400V, VIN = 0V * Dotted Line: Outside Connection
Operating circuit current Icc3 4.0 mA Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V
VIH 0.8•Vcc V
Input threshold voltage Vcc = 9 to 15V
VIL 0.2•Vcc V
Low-side IGBT gate drive voltage VGL 0.8•Vcc 16 V Vcc = 9 to 15V
t d (on) 0.6 0.7 0.8 µs
Timing Chart
High side VM = 85V, Io = 0.41A
t d (off) 1.8 2.2 2.6 µs Vcc = 10V A Drive Example
Delay time* t d (on) 0.8 0.9 1.0 µs VIN = 10V (Out Stage = ON) Ignition OSC250Hz
Low side VIN = 0V (Out Stage = OFF) VCC
t d (off) 1.3 1.6 1.9 µs
IN1
∆t d = H/S t d (off) - L/S t d (on)
∆td 2.5 µs
or L/S t d (off) - H/S t d (on) IN2
Operating voltage Vcc 9 15 V Ta = –40 to +105°C

LO1
LO2
0V
Recommended Operation Range –HV–GND
–400V
–85V
Ratings OUT1–GND 0V
Parameter Symbol Unit Conditions –85V
min typ max –400V
Dead time td 5.0 µs Ta = –40 to +105°C 0V
OUT2–GND –85V
–400V
* About delay time
VIN1 VIN1
0V 10% 10% 0V 10% 10%
0V 0V 10%
10%
Vout2
10% 10%
Vout1
td(on) td(off)
Conditions
Measurement Circuit
VM=85V
VIN1
RL VIN2 IO=0.41A (RL=206Ω)
VOUT1 VOUT2 * When pulse signal is inputted to VlN1,
VIN2 VIN1
RL is off.
72
3.5 4.0 3.5
150ºC VIN=0V VCC=VIN1(2)=10V
VIN=0V VCC=10V

3.5

3.0 105ºC 3.0

150ºC
3.0 150ºC
2.5 2.5
105ºC
25ºC 2.5 105ºC
2.0 2.0
2.0
25ºC
1.5 –40ºC 25ºC 1.5
1.5
1.0 –40ºC 1.0 –40ºC
1.0
0.5 0.5 0.5
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500
■ Quiescent circuit current supplied high voltage ■ Quiescent circuit current supplied high voltage ■ Operating circuit current
5 3.5 3.5
150ºC
VIN=0V Ta=25ºC VCC= Ta=25ºC

VCC=
VM=400V
125ºC 3.0 15V 3.0

4 15V
2.5 2.5
12V
3 25ºC 12V
2.0 2.0
10V 10V
1.5 9V 1.5
2 –40ºC 9V
1.0 1.0 6V
6V
1
0.5 4.5V 0.5 4.5V
0 0 0
0 5 10 15 20 0 100 200 300 400 500 0 100 200 300 400 500

2.0 10 14
150ºC Ta=25ºC VCC=15V
VOUT (ON) (V)
VCC=VIN=10V
105ºC VCC=15V 12
25ºC
Input threshold voltage VIH (V)
8
–40ºC
10
1.5
6
Output on-state voltage
8 VCC=9V
VCC=9V
6
4
1.0
4
2
2
0.5 0 0
0 1 2 3 4 –50 0 50 100 150 200 0 5 10 15
Output current I OUT (A) Ambient temperature (ºC) Input voltage VIN (V)

2.0 8 14
Output on-state voltage VOUT (ON) (V)
VCC=VIN=10V
1.8 7 12 VCC=15V
Input threshold voltage VIL (V)
6 10
1.6
5 VCC=15V
1.4 8
I O=2A
4 VCC=9V
1.2 6
3
VCC=9V
1.0 4
2
I O=0.4A
0.8 2
1
0.6 0 0
–50 0 50 100 150 –50 0 50 100 150 200 –50 0 50 100 150
Ambient temperature (ºC) Ambient temperature (ºC) Ambient temperature (ºC)
73
3.0 3.5 2.0
2.5 3.0
1.5
t d (off) 2.5 t d (off)
turn-on, off (µs)
turn-on, off (µs)
turn-on, off (µs)

2.0 t d (off)
2.0
1.5 1.0
1.5
1.0 t d (on)
1.0
t d (on) 0.5
t d (on)
0.5 0.5
0 0 0
7 9 11 13 15 –50 0 50 100 150 7 9 11 13 15
■ Low side switch turn-on, off ■ Transient thermal resistance characteristics ■ IGBT ASO characteristics
2.5 100 100
2.0
t d (off) 10
Collector current (A)

turn-on, off (µs)
10
1.5
1
100µs
1.0
t d (on) 1
0.1 1ms
0.5
Ta = 25°C
Single pulse
10ms
0 0.01 0.1
–50 0 50 100 150 0.001 0.01 0.1 1 10 100 10 100 1000
Ambient temperature (ºC) Power time (s) Collector-emitter voltage (V)

5
without heatsink
4
PD (W)
3
Power derating
0
–50 0 50 100 150
74
75
Custom ICs
■ Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
■ Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.
Features
Examples of Sanken Automotive Hybrid ICs
● All semiconductor chips used are
manufactured by Sanken.
● Main product lineup consists of
Lead frame type
power ICs produced out of many ● One-chip power IC
multi-chip power IC
years' experience of Sanken.
● Uses monolithic chips with flip-chip
construction.
● Mainly available in miniature
transfer-mold packages.
Examples of Custom Hybrid IC

Products
● Regulators for alternators Lead frame type ● High-output high-breakdown voltage IC
● Simplified integration of custom circuits
● Igniters power hybrid IC with
● Distribution of unit functions
● Power supply for microcomputer ceramic substrate (Actuators may be built in the device)
system
● Power steering control IC
● Motor and actuator driver
● Others
Surface-mount
power IC
76
Custom ICs
External Dimensions (unit: mm)
MT-100 FM205 STA 8pin STA 10pin

15.6 5.0 10.0 4.2 20.2 4.0 25.25 4.0
9.0
9.0
19.9
16.9
SMA12pin SMA15pin SLA12pin SLA15pin
31.0 4.0 31.0 4.0 31.0 4.8 31.0 4.8

10.2
10.2
16.0
16
SLA18pin 3GR-F 3GR-M STR-S
15.6 5.5 19.8 5.5 24.2 5.5

31.0 4.8
16.0
23
23
23
SPM SMD16pin SPF16pin

12.05
4.8 16 15 14 13 12 11 10 9
35 16 9
9.8
6.8
10.5
7.5
16.1
Pin 1 20.0 8
1 2 3 4 5 6 7 8
4.0
2.5
SPF20pin SPF24pin
14.74±0.2
+0.1
13.04±0.2 1.0 – 0.05 17.28
20 11 Fin
thickness
24 13
10.5±0.3
±0.2
7.5
10.6
7.5
2±0.2
1 10
+0.15 1 12
1.27±0.25 0.4 – 0.05
2.5±0.2
+0.15
0.25 – 0.05
2.5
77
78
2 Discretes
2-1. Transistors 2-2. MOS FETs
......................................... .........................................
2-1-1. Transistors 80 2-2-1. MOS FETs 108
...... ...
2SA1488/1488A (–60V/–4A, –80V/–4A) 80 2SK3710 (60V/70A/6mΩ, Surface-mount) 108
....................................
2SA1567 (–50V/–12A) 81 2SK3711 (60V/70A/6mΩ) .............................. 109
±
2SA1568 (–60V/ 12A) .................................... 82 2SK3724 (60V/80A/5mΩ, Surface-mount) ... 110
2SA1908 (–120V/–8A) ..................................... 83 2SK3800 (40V/70A/6mΩ, Surface-mount) .. 111
...................................
2SB1622 (–200V/–15A) 84 2SK3801 (40V/70A/6mΩ) .............................. 112
2SC3852 (60V/3A) ........................................... 85 2SK3803 (40V/85A/3mΩ, Surface-mount) ... 113
........................................ ..........................
2SC4024 (50V/10A) 86 2SK3851 (60V/85A/4.7mΩ) 114
...................................... ...
2SC4065 (60V/±12A) 87 FKV460S (40V/60A/9mΩ, Surface-mount) 115
2SC4153 (120V/7A) ........................................ 88 FKV660S (60V/60A/14mΩ, Surface-mount) 116

.................................. ...........................
2SD2141 (380±50V/6A) 89 2-2-2. MOS FET Arrays 117
....................................
2SD2382 (60±5V/±6A) 90 SDK06 (52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117
........................................
2SD2633 (150V/8A) 91 SDK08 (50V/4.5A/0.08Ω, Surface-mount 4-circuits) 118
...........................................
FP812 (–100V/–8A) 92 SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119
................................. ..........
MN611S (115±10V/±6A) 93 SLA5027 (60V/12A/0.08Ω, 4-circuits) 120
MN638S (380±50V/6A) ................................... 94 SLA5098 (40V/20A/0.017Ω, 6-circuits) ....... 121

........... ..........
SSD103 (65±5V/±6A, Surface-mount) 95 SMA5113 (450V/7A/1.1Ω, 4-circuits) 122
............................
2-1-2. Transistor Arrays 96 STA508A (120V/6A/0.2Ω, 4-circuits) ........... 123
.......
SDA03 (–60V/–6A, Surface-mount 4-circuits) 96 STA509A (52±5V/3A/0.25Ω, 4-circuits) 124
SDA04 (–60V/–6A, Surface-mount 2-circuits) 97

SDC09 (65±5V/6A, Surface-mount 2-circuits) 98 2-3 Thyristors
.........
SLA8004 (60V/12A, –55V/–12A, H-bridge) 99 2-3-1. Reverse Conducting Thyristors .. 125
..............
SPF0001 (115±10V/±6A, Surface-mount 2-circuits) 100 TFC561D (600V, 430A, 1200A/µs) 125
.................. ..............
STA315A (35±5V/2A, 3-circuits) 101 TFC562D (600V, 600A, 1600A/µs) 126
..................
STA335A (35±5V/3A, 2-circuits) 102
STA415A (35±5V/2A, 4-circuits) .................. 103 2-4. Diodes

STA460C (60±10V/±6A, 2-circuits) .............. 104 2-4-1. Alternator Diodes .......................... 127
................ ..
STA461C (65±5V/±6A, 2-circuits) 105 2-4-2. High-voltage Diodes for Igniter 128
STA463C (115±10V/±6A, 2-circuits) ............ 106 2-4-3. Power Zener Diodes ................... 129
.................. ..........
STA464C (65±5V/6A, 4-circuits) 107 2-4-4. General-purpose Diodes 130
79
Power Transistor 2SA1488/1488A
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta = 25ºC) External Dimensions TO220F (full-mold)
Ratings Ratings
Symbol Unit Symbol Test Conditions Unit
2SA1488 2SA1488A 2SA1488 2SA1488A 4.2
10.0
VCBO –60 –80 V –100max –100max µA 3.3 2.8 C0.5
ICBO
VCEO –60 –80 V VCB = –60 –80 V
µA
4
VEBO –6 V IEBO VEB = –6V –100max
8.4
IC –4 A V(BR) CEO IC = –25mA –60min –80min V
16.9
IB –1 A hFE VCE = –4V, IC = –1A 40min a
2.6
0.8
b
PC 25 (Tc = 25ºC) W VCE (sat) IC = –2A, IB = –0.2A –0.5max V
Tj 150 ºC fT VCE = –12V, IE = –0.2A 15typ MHz
3.9
Tstg –55 to +150 ºC COB VCB = –10V, f = 1MHz 90typ pF 1.35
(13.5)
1.35
0.85
Typical Switching Characteristics (common emitter) 2.54 2.54 0.45

VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 2.2
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
a) Part No.
–12 6 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ
b) Lot No.
B C E
(Unit: mm)
■ IC —VCE Characteristics (typ.) ■ VCE (sat)—IB Characteristics (typ.) ■ IC —VBE Temperature Characteristics (typ.)
( VC E = –4 V)
–4 –1.5 –4
A
0m –60mA
–50mA
–8
–40mA
–3 –3
–30mA –1.0
VCE (sat) (V)
IC (A)
re)
IC (A)
)
)
atu
tu re
–2 –20mA
tu re
–2
per
p e ra
p e ra
tem
m
m
–0.5
e te
se
–10mA
e te
(Ca
–1 IC = –3A –1
(C a s
(C a s
ºC
IB = –5mA –2A
125
– 3 0 ºC
2 5 ºC
–1A
0 0 0
0 –1 –2 –3 –4 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
VCE (V) IB (A) VBE (V)
■ hFE —IC Characteristics (typ.) ■ hFE —IC Temperature Characteristics (typ.) ■ j-a —t Characteristics
(VC E = –4V) (VC E = –4 V )
500 200 5
125ºC
100 25ºC
(ºC/W)
Typ
–30ºC
hFE
hFE
100
50
j-a
50 1
20 20 0.7
–0.01 –0.1 –0.5 –1 –4 –0.02 –0.1 –1 –4 1 10 100 1000
IC (A) IC (A) t (ms)
■ f T —IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC —Ta Derating
(VCE = –12V)
60 –10 30
natural air cooling
1m Silicone grease
–5 100ms 10 s Aluminum heatsink
50
m Unit: mm
s
40 Typ DC 20
fT (MHz)
PC (W)
W
–1
IC (A)
ith
in
30 fin
15 ite
–0.5 0• he
15 at
si
Without heatsink 0• nk
20 natural air cooling 10 100 2
• 10
0
50 • • 2
10 50 •
2
–0.1
Without heatsink
2
0 –0.05 0
0.005 0.01 0.05 0.1 0.5 1 3 3 5 10 50 100 0 25 50 75 100 125 150
IE (A) VCE (V) Ta (ºC)
80
Power Transistor 2SA1567
Absolute Maximum Ratings (Ta = 25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220F (full-mold)
Symbol Ratings Unit Symbol Test Conditions Ratings Unit
VCBO –50 V ICBO VCB = –50V –100max µA
10.0 4.2
VCEO –50 V IEBO VEB = –6V –100max µA 3.3 2.8 C0.5
VEBO –6 V V(BR) CEO IC = –25mA –50min V
IC
4
–12 A hFE VCE = –1V, IC = –6A 50min
8.4
IB –3 A VCE (sat) IC = –6A, IB = –0.3A –0.35max V
16.9
PC 35 (Tc = 25ºC) W fT VCE = –12V, IE = –0.5A 40typ MHz a
2.6
0.8
b
Tj 150 ºC COB VCB = –10V, f = 1MHz 330typ pF
Tstg –55 to +150 ºC
3.9
Typical Switching Characteristics (common emitter) 1.35
(13.5)
1.35
0.85
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 2.54 2.54 0.45
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ 2.2
a) Part No.
b) Lot No.
B C E (Unit: mm)
■ IC —VCE Characteristics (typ.) ■ VCE (sat)—IB Characteristics (typ.) ■ IC —VBE Temperature Characteristics (typ.)
( VC E = –4 V)
–12 –1.5 –12
A
0m
–20B =
0mA
–15 –100mA
I
–10 –10
–8 –60mA –1.0 –8
VCE (sat) (V)
IC (A)
IC (A)
)
)
tu re
)
–40mA
ure
–6 –6
ture
rat
p e ra
era
pe
IC = –12A
emp
te m
tem
–4 –20mA –0.5 –9A –4
se t
–6A
se
ase
(Ca
–3A
a
–10mA
º C (C
C (C
–2 –2
5ºC
–1A
–5mA
–30
25º
12
0 0 0
0 –1 –2 –3 –4 –5 –6 –2 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
VCE (V) IB (mA) VBE (V)
■ hFE —IC Characteristics (typ.) ■ hFE —IC Temperature Characteristics (typ.) ■ j-a —t Characteristics
(VC E = –1V) (VC E = –1V )
500 500 4
125ºC
Typ 25ºC
– 30ºC
(ºC/W)
hFE
hFE
100 1
100
j-a
50 50 0.5
30 30 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
■ f T —IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC —Ta Derating
(VCE = –12V)
50 –30 35
1m natural air cooling
s Silicone grease
30
–10
10
10 Aluminum heatsink
Typ
m
0m Unit: mm
40
s
–5 DC s
W
fT (MHz)
ith
20
PC (W)
IC (A)
in
fin
30
–1
ite
he
150
at
–0.5 •1
si
100 50
nk
• 10
0 • •2
Without heatsink
natural air cooling 10
20 2
50 • 50 • 2
–0.1
Without heatsink
–0.05 2
0 0
0.05 0.1 1 12 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
81
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220F (full-mold)
VCBO –60 V ICBO VCB = –60V –100max µA 4.2
10.0
VCEO –60 V IEBO VEB = –6V –60max mA 3.3 2.8 C0.5
VEBO –6 V V(BR) CEO IC = –25mA –60min V
4
±
IC 12 A hFE VCE = –1V, IC = –6A 50min
8.4
16.9
PC 35 (Tc=25ºC) W VFEC IECO = –10A –2.5max V a
2.6
0.8
b
Tj 150 ºC fT VCE = –12V, IE = 0.5A 40typ MHz
Tstg –55 to +150 ºC COB VCB = –10V, f = 1MHz 330typ pF
3.9
1.35
(13.5)
1.35
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 2.54 2.54 0.45

(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 2.2
–24 4 –6 –10 5 –120 120 0.4typ 0.4typ 0.2typ
a) Part No.
b) Lot No.
B C E
(Unit : mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
( VC E = –1 V)
–12 –1.4 –12
mA
–150
A
–20 B =
0m
–100mA
I
–10 –10
–1.0
–8 –8
VCE (sat) (V)
IC (A)
–60mA IC = –12A
IC (A)
)
–9A
ure
re)
–6 –6
)
tu re
–40mA
rat
atu
–6A
pe
p e ra
per
–3A
tem
–0.5
tem
–4 –4
m
–20mA –1A
se
s e te
ase
(Ca
a
C (C
5ºC
–10mA
º C (C
–2 –2
12
25º
–30
0 0 0
0 –1 –2 –3 –4 –5 –6 –7 –10 –100 –1000 –3000 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2
■ hFE — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) ■ j-a — t Characteristics

(VC E = –1V) (VC E = –1V )
300 300 4
Typ 125ºC
25ºC
100 100 –30ºC
(ºC/W)
hFE
hFE
1
j-a
10 10
0.5
2 2 0.3
–0.02 –0.1 –1 –10 –0.02 –0.1 –1 –10 1 10 100 1000
–12 –12
■ f T — IE Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PC — Ta Derating

(VCE = –12V)
50 –30 35
s Silicone grease
30
–10 Aluminum heatsink
10
Typ 10
0m
m
Unit: mm
s
40 –5 s
DC
W
fT (MHz)
ith
PC (W)
20
IC (A)
in
fin
30
–1
ite
he
150
at
–0.5
si
• 15
nk
Without heatsink 0•
10 2
20 natural air cooling
100
50 • 50 • 2 • 10
0•2
–0.1
Without heatsink
–0.05 2
0 0
0.05 0.1 1 10 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
82
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions FM100 (T03PF)
µA
0.8 ±0.2
VCBO –120 V ICBO VCB = –120V –10max 15.6 ±0.2 5.5±0.2
VCEO –120 V IEBO VEB = –6V –10max µA 3.45±0.2
IC = –50mA
5.5
–120min
9.5±0.2
VEBO –6 V V(BR) CEO V
IC –8 A hFE * VCE = –4V, IC = –3A 50min
23.0 ±0.3
IB –3 A VCE (sat) IC = –3A, IB = –0.3A –0.5max V 3.3±0.2
fT VCE = –12V, IE = 0.5A 20typ a
PC 75 (Tc=25ºC) W MHz
1.6
b
Tj 150 ºC COB VCB = –10V, f = 1MHz 300typ pF
3.0
3.3
* Rank: O (50 to 100), P (70 to 140), Y(90 to 180) 1.75 0.8
16.2
2.15
+0.2
–0.1
+0.2
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 5.45±0.1 5.45±0.1 0.65 3.35 –0.1
–40 10 –4 –10 5 –400 400 0.14typ 1.40typ 0.21typ
a) Part No.
B C E b) Lot No.
(Unit : mm)
( VC E = –4 V)
–8 –3 –8
A A
A
0m m
m
0 50
–1
50
–2 –100m
A
–3
–6 –75mA –6
–2
VCE (sat) (V)
IC (A)
–50mA
IC (A)
re)
)
re)
tu re
atu
atu
–4 –4
p e ra
per
per
tem
em
m
–25mA
e te
se t
–1
se
as
(Ca
a
C (C
º C (C
–2 IC = – 8A –2
ºC
IB=–10mA
25º
125
–30
– 4A
–2A
0 0 0
0 –1 –2 –3 –4 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 –0.5 –1.0 –1.5

(VC E = –4V) (VC E = –4V )
200 300 4
Typ 125ºC
(ºC/W )
25ºC
100
hFE
100 1
hFE
–30ºC
j -a
0.5
50
50
30 30 0.2
–0.02 –0.1 –0.5 –1 –5 –8 –0.02 –0.1 –0.5 –1 –5 –8 1 10 100 1000 2000

(VCE = –12V)
30 –20 80
–10 10
m
s
10
Typ –5 DC 0m 60
s
W
20
it
h
fT (MHz)
in
PC (W)
IC (A)
fi
ni
te
40
he
at
–1
si
nk
10 –0.5
Wit h ou t h e a t sin k 20
n a t u ra l a ir c oolin g
Wit h ou t h e a t sin k
3.5
0 –0.1 0
0.02 0.05 0.1 0.5 1 5 8 –5 –10 –50 –100 –150 0 25 50 75 100 125 150
83
Power Transistor 2SB1622
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions

Symbol Ratings Unit Ratings
Symbol Test Conditions Unit 5.5 ±0.2
VCBO –200 V min typ max
5.5 ±0.2
3.3 ±0.2 3.45 ±0.2
0.8
VCEO –200 V ICBO VCB = – 200V µA –100
µA
9.5 ±0.2
VEBO –5 V IEBO VEB = – 5V –100
IC IC = – 30mA – 200
23.0 ±0.3
–15 A VCEO V
IB –1 A hFE* VCE = – 4V, IC = –10A 5000 30000 a
3.0
1.6
PC 85 (Tc=25ºC) W VCE(sat) IC = –10A, IB = –10mA –2.5 V b
3.3
Tj 150 ºC VBE(sat) IC = –10A, IB = –10mA –3.0 V
1.75 ±0.15 0.8
16.2
Tstg –55 to +150 ºC fT VCE = –12V, IE = 2A 60 MHz
2.15±0.15
COB VCB = –10V, f = 1MHz 270 pF
* Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) +0.2
1.05 –0.1 0.65 –0.1
+0.2
3.35±0.2
5.45 ±0.1 5.45±0.1
Typical Switching Characteristics
15.6±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 1.5 4.4 1.5
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a) Part No.
– 40 4 –10 –10 5 –10 10 0.4typ 3.6typ 1.0typ b) Lot No.
B C E
(Unit : mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics (typ.)
15 –3 –3
A
–50mA –1.5mA 125ºC IC = – 5A

m
75ºC
.0
–15mA –1.0mA
–3
–5.0mA 25ºC
– 30ºC
IC = – 15A
–0.8mA
VCE (sat) ( V )
VCE (sat) ( V )
10 –2 –2
IC (A)
–0.5mA IC = – 10A
IB = –0.3mA IC = – 5A
5 –1 –1
0 0 0
0 –2 –4 –6 –0.2 –1 –10 –100 –200 –0.1 –1 –10 –100 –200
VCE ( V ) IB (mA) IB (mA)
■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) ■ hFE — IC Characteristics (typ.)
(VCE = – 4V)
–3 15 100000
IC = –10A VCE = – 4V
50000
typ
VCE (sat) ( V )
–2 10
hFE
10000
IC (A)
Ta=150ºC
125ºC 5000
100ºC 50ºC
125ºC 75ºC 25ºC
–1 75ºC 5
0ºC
25ºC – 30ºC
– 30ºC 1000
– 55ºC –0.2 –0.5 –1 –5 –10 –20
0 0 IC (A)
–0.2 –1 –10 –100 –200 –1 –2 –3
IB (mA) VBE (V)
■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg •t f — IC Characteristics (typ.) ■ j-a — t Characteristics
100000 10 3.0
150ºC VCE = – 4V Ta = 25ºC
50000 125ºC 5 VCC = –40V
ton• tstg • tf (µsec)
100ºC – IB1 = IB2 = 10mA

75ºC
(ºC/W)
1.0
tstg
hFE
10000 1 0.5
tf
j-a
5000 50ºC 0.5

25ºC
0ºC
–30ºC ton
1000 –55ºC
0.1 0.1
–0.2 –0.5 –1 –5 –10 –20 –0.2 –0.5 –1 –5 –10 –20 1 10 100 1000 2000
IC (A) IC (A) t (sec)
■ f T — IE Characteristics (typ.) ■ Safe Operating Area Ta = 25ºC ■ PC — Ta Derating

(single pulse)
80 –50 90
–30 80
10
60 –10 70
m
10
s
0m
W
–5 60
ith
D. s
in
fT (MHz)
PC (W)
fin
C. 50
ite
IC (A)
he
40
at
40
si
–1
nk
–0.5 30
20 Without heatsink
natural air cooling
20
–0.1 10
Without heatsink
0 –0.05 0
0.02 0.1 0.5 1 5 10 –3 –10 –100 –500 0 25 50 75 100 125 150
84
70 IE (A) VCE ( V ) Ta (ºC)
Power Transistor 2SC3852
VCBO 80 V ICBO VCB = 80V 10max µA 10.0 4.2
VCEO 60 V IEBO VEB = 6V 100max µA 3.3 2.8 C0.5
VEBO 6 V V(BR) CEO IC = 25mA 60min V
4
IC
8.4
3 A hFE VCE = 4V, IC = 0.5A 500min
IB 1 IC = 2A, IB = 50mA V
16.9
A VCE (sat) 0.5max
a
PC 25 (Tc=25ºC) W fT VCE = 12V, IE = –0.2A 15typ MHz 2.6
0.8
b
Tj 150 ºC COB VCB = 10V, f = 1MHz 50typ pF
3.9
(13.5)
1.35
0.85
20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ 2.2
a) Part No.
B C E b) Lot No.
(Unit : mm)
( VC E = 4 V)
3 1.5 3
2 mA 8mA
=1
IB
5mA
2 1.0 2
VCE (sat) (V)
)
3mA
ure
IC (A)
IC (A)
)
re )
tu re
rat
e ra tu
pe
2mA
p e ra
tem
mp
m
1 0.5
s e te
1
se
e te
1mA
(Ca
3A
(C a s
(C a
ºC
0.5mA 2A
125
25ºC
– 3 0 ºC
IC =1A
0 0 0
0 1 2 3 4 5 6 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.1

(VCE=4V) (VC E = 4V )
2000 2000 5
125ºC
1000 Typ 1000
25ºC
(ºC/W)
hFE
hFE
500 500 –30ºC

j-a
1
VCB = 10V
100 100 IE = –2A
0.5
0.01 0.1 0.5 1 3 0.01 0.1 0.5 1 3 1 10 100 1000

(VCE = 12V)
30 10 30
1m
5 10
s
10 ms
0m
s
20 DC 20
W
ith
fT (MHz)
Typ
PC (W)
in
IC (A)
1
fin
ite
he
a
ts
in
0.5
k
10 10
Without heatsink
natural air cooling
0.1 Without heatsink
0 0.05 0
–0.005 –0.01 –0.05 –0.1 –0.5 –1 –2 3 5 10 50 100 0 50 100 150
85
VCEO 50 V IEBO VEB = 15V 10max µA 3.3 2.8 C0.5
4
IC 10 A hFE VCE = 4V, IC = 1A 300 to 1600
8.4
IB 3 A IC = 5A, IB = 0.1A 0.5max V
16.9
VCE (sat)
a
PC 35 (Tc=25ºC) W fT VCB = 12V, IE = –0.5A 24typ MHz 2.6
0.8
b
Tj 150 ºC COB VCB = 10V, f = 1MHz 150typ pF
3.9
(13.5)
1.35
0.85
VCC RL IC IB1 IB2 t on t stg tf
(V) (Ω) (A) (A) (A) (µs) (µs) (µs) 2.54 2.54 0.45
20 4 5 0.1 –0.1 0.5typ 2.0typ 0.5typ 2.2
a) Part No.
B C E b) Lot No.
(Unit: mm)
( VC E = 4 V)
10 1.5 10
IB = 35mA
8 30mA 8
25mA
1.0
VCE (sat) (V)
20mA
IC (A)
6 6
)
IC (A)
ure
15mA
re)
rat
)
atu
tu re
pe
10mA
per
em
4 4
p e ra
tem
e t
0.5
m
as
10A
s e te
se
(C
5mA
Ca
5ºC
2 2
a
C (
5A
º C (C
12
3A
25º
IC = 1A
–30
0 0 0
0 2 4 6 0.002 0.01 0.1 1 2 0 0.5 1.0 1.2

(VC E = 4V) (VC E = 4V )
1000 1000 4
125ºC
Typ
(ºC/W)
500 500 25ºC

hFE
hFE
C
–30º 1
j-a
0.5
100 100 0.3

0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1 5 10 1 10 100 1000

(VCE = 12V) 40
30 30
s Silicone grease
Typ 10 Aluminum heatsink
10 m Unit: mm
10 s 30
0m
20 s
5 DC
fT (MHz)
PC (W)
W
IC (A)
ith
20
in
fin
ite
he
at
10 150
si
1 • 15
nk
10 0 •2
Without heatsink
0.5 natural air cooling 1
50 • 50 • 2 00 • 10
0 •2
Without heatsink
2
0 0.2 0
–0.05 –0.1 –0.5 –1 –5 –10 3 5 10 50 100 0 25 50 75 100 125 150
86
VCEO 60 VEB = 6V mA 3.3 2.8
V IEBO 60max C0.5
4
±12
8.4
IC A hFE VCE = 1V, IC = 6A 50min
IC = 6A, IB = 1.3A V
16.9
IB 3 A VCE (sat) 0.35max
a
PC 35 (Tc=25ºC) W VFEC VECO = 10A 2.5max V 2.6
0.8
b
Tj 150 ºC fT VCE = 12V, IE = –0.5A 24typ MHz
3.9
Tstg –55 to +150 ºC COB VCB = 10V, f = 1MHz 180typ pF
1.35
(13.5)
1.35
0.85
Typical Switching Characteristics (common emitter)
2.54 2.54 0.45
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) 2.2
24 4 6 10 –5 0.12 –0.12 0.6typ 1.4typ 0.4typ

a) Part No.
B C E b) Lot No.
(Unit: mm)
( VC E = 1 V)
12 1.3 12
mA
A
0
0m
15 100mA
20
10 10
1.0
60mA
8 8
VCE (sat) (V)
IC (A)
)
40mA
ure
IC (A)
re)
6
rat
6
)
atu
tu re
pe
per
tem
p e ra
20mA 0.5
tem
4 4
se
m
e te
(Ca
ase
12A
C (C
(C a s
5ºC
IB = 10mA 9A
2 6A 2
12
25º
3A
– 3 0 ºC
IC = 1A
0 0 0
0 2 4 6 0.005 0.01 0.1 1 3 0 0.5 1.0 1.1

(VCE = 1V) (VCE = 1V)
400 400 5
Typ ºC
125
100 100 ºC
(ºC/W)
25 C
50 50 3 0º
–
hFE
hFE
1
j-a
10 10 0.5
5 5
3 3 0.2
0.02 0.1 1 10 12 0.02 0.1 1 10 12 1 10 100 1000

(VCE = 12V)
30 30 40
natural air cooling
1m
Silicone grease
s
Typ Aluminum heatsink
10
10 10 Unit: mm
m
0m
s
s 30
5 DC
20
fT (MHz)
PC (W)
W
IC (A)
ith
in
20
fin
1
ite
he
at
0.5
si
10
nk
150
10 • 15
0•
Without heatsink
1 2
natural air cooling 50 • 50 • 2 00 • 10
0•2
0.1
Without heatsink
2
0 0.05 0
–0.05 –0.1 –0.5 –1 –5 –10 –12 3 5 10 50 100 0 25 50 75 100 125 150
87
3.3
VCEO 120 V IEBO VEB = 8V 100max µA 2.8 C0.5
4
8.4
IC 7 (pulse 14) A hFE VCE = 4V, IC = 3A 70 to 220
16.9
IB 3 A VCE (sat) IC = 3A, IB = 0.3A 0.5max V
a
PC 30 (Tc=25ºC) W VBE (sat) IC = 3A, IB = 0.3A 1.2max V 2.6
0.8
b
Tj 150 ºC fT VCE = 12V, IE = –0.5A 30typ MHz
3.9
Tstg –55 to +150 ºC COB VCB = 10V, f = 1MHz 110typ pF
(13.5)
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)
2.54 2.54 0.45
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) 2.2
50 16.7 3 10 –5 0.3 –0.6 0.5max 3max 0.5max

a) Part No.
B C E b) Lot No.
(Unit: mm)
( VC E = 4 V)
7 3 7
mA
200 0mA
5 15 6
A
100m
5 5
60mA 2
VCE (sat) (V)
IC (A)
40mA
)
ure
4 4
IC (A)
re)
rat
re )
atu
pe
ra tu
20mA
per
3 3
tem
pe
em
se
e te m
1
se t
(Ca
2 2
a
IB =10mA
(C a s
5ºC
C (C
12
25º
1 1
– 3 0 ºC
3A 5A
IC = 1A
0 0 0
0 1 2 3 4 0.005 0.01 0.1 1 2 0 0.5 1.0 1.1

(VCE = 4V) (VCE = 4V)
300 300 5
125ºC
Typ
25ºC
(ºC/W)
100 100
hFE
hFE
C
–30º 1
50 50
j-a
0.5
20 20 0.2
0.01 0.1 0.5 1 5 7 0.01 0.1 0.5 1 5 7 1 10 100 1000

(VCE = 12V)
40 20 30
10
0µ natural air cooling
s
10 Silicone grease
Typ Aluminum heatsink
Unit: mm
30 5
10m
20
s
W
fT (MHz)
ith
PC (W)
IC (A)
in
fin
20 1
ite
15
0•
he
0.5 15
at
0•
si
10 2
nk
100
10 50 • 50 • 2 •1
Without heatsink 00
natural air cooling •2
2
0 0.05 0
–0.01 –0.1 –1 –5 5 10 50 100 200 0 25 50 75 100 125 150
88
Power Transistor 2SD2141
VCBO 380±50 V ICBO VCB = 330V 10max µA 10.0 4.2
3.3
VCEO 380±50 V IEBO VEB = 6V 20max µA 2.8 C0.5
VEBO 6 V V(BR) CEO IC = 25mA 330 to 430 V
4
8.4
IC 6 (pulse 10) A hFE VCE = 2V, IC = 3A 1500min
16.9
IB 1 A VCE (sat ) IC = 4A, IB = 20mA 1.5max V
a
PC 35 (Tc=25ºC) W 2.6
0.8
b
Tj 150 ºC
3.9
1.35
(13.5)
1.35
0.85
2.54 2.54 0.45

2.2
a) Part No.
B C E b) Lot No.
(Unit: mm)
( VC E = 4 V)
10 3 10
150mA A
120mA A 20m
90m 0mA 18m
A
6
4mA
2mA 2
VCE (sat) (V)
IC (A)
IC (A)
e)
5 IC = 7A 5
re )
ur
IB = 1mA
)
ure
at
ra tu
5A
er
rat
3A
mp
pe
pe
1
te
e te m
1A
tem
e
as
(C
se
(C a s
Ca
C
5º
C (
12
– 3 0 ºC
25º
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1.0 2.0 2.4

(VCE = 2V) (VCE = 2V)
10000 10000 5
5000 Typ 5000
5ºC
12
(ºC/W)
1000 1000 ºC
500 25 1
hFE
hFE
500 5 ºC
–5
0.5
j-a
100
50 100
50
10 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1.0 5 10 1 10 100 1000

(VCE = 12V)
40 20 40
natural air cooling
10 Silicone grease
Typ
1ms
10m s
Aluminum heatsink
10
5 Unit: mm
0m
DC
30 30
s
1
fT (MHz)
W
PC (W)
ith
IC (A)
in
20 0.5 20
fin
ite
he
at
si
nk
0.1 Without heatsink 150

10 natural air cooling 10 • 150
0.05 • 2
50 • 50 • 2 100 •
100
•2
Without heatsink
2
0 0.01 0
–0.01 –0.05 –0.1 –0.5 –1 –5 1 5 10 50 100 500 0 25 50 75 100 125 150
89
VCBO 65±5 V ICBO VCB = 60V 10max µA 10.0 4.2
3.3 2.8
VCEO 65±5 V IEBO VEB = 6V 10max µA C0.5
VEBO 6 V VCEO IC = 50mA 60 to 70 V
4
±6 (pulse ±10)
8.4
IC A hFE VCE = 1V, IC = 1A 700 to 3000
16.9
IB 1 A VCE (sat) IC = 1.5A, IB = 15mA 0.15max V
a
PC 30 (Tc=25ºC) W VFEC IFEC = 6A 1.5max V 2.6
0.8
b
Tj 150 ºC Es/b L = 10mH, single pulse 200min mJ
3.9
1.35
(13.5)
Typical Switching Characteristics 1.35
0.85
12 12 1 10 –5 30 –30 0.25 0.8 0.35 2.2
a) Part No.
B C E b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(IC = 1.5A)
10 0.75 6
20mA
30mA
5
8
10mA
0.5 4
VCE (sat) (V)
6
IC (A)
IC (A)
Ta = –55ºC 3 Ta=55ºC
5mA 25ºC
25ºC
4 75ºC
3mA 75ºC
0.25 2 125ºC
125ºC
2 IB = 1mA 1
0 0 0
0 1 2 3 4 5 1 5 10 50 100 400 0 0.5 1.0 1.5

(VCE = 1V) (VCE = 1V)
5000 5000 5
Typ
(ºC/W)
1000 1000
hFE
500
hFE
500 Ta = –55ºC
25ºC 1
j-a
75ºC
100 100
125ºC 0.5
50 50
30 30 0.3
0.01 0.05 0.1 0.5 1 5 10 0.01 0.05 0.1 0.5 1 5 10 1 5 10 50 100 500 1000

(VCE = 1V)
30 20 30
natural air cooling
0.5
Silicone grease
10 Aluminum heatsink
mse
25
10
1ms c
Unit: mm
ms
5
c
10
ec
D.
e
Typ 20
0m
20 C
(T
c
se
fT (MHz)
=
PC (W)
ith
c
IC (A)
25
in
15 ºC 15
fin
) 0
ite
1 100 • 150
he
•1 •
00 2
at
10 10
si
•2
nk
0.5
Without heatsink 50 • 5
0•2
5 natural air cooling
Without heatsink
0 0.1 0
–0.01 –0.05 –0.1 –0.5 –1 –5 –10 1 5 10 50 100 0 50 100 150
90
VCBO 200 V ICBO VCB=200V 100max µA 10.0 4.2
3.3 2.8
VCEO 150 V IEBO VEB=6V 10max mA C0.5
VEBO 6 V VCEO IC=50mA 150min V
4
8.4
IC 8 A hFE VCE=2V, IC=6A 2000min
16.9
IB 1 A VCE (sat) IC=6A, IB=6mA 1.5max V
a
35 (Tc=25ºC) VBE (sat) IC=6A, IB=6mA 2.0max V 2.6
0.8
b
PC W
2 (Ta=25ºC, No Fin)
3.9
Tj 150 ºC
1.35
(13.5)
1.35
0.85
2.54 2.54 0.45

2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)
91
Power Transistor FP812
VCBO –120 V ICBO VCB = –120V 10max µA 10.0 4.2
3.3 2.8
VCEO –120 V IEBO VEB = –6V 10max µA C0.5
VEBO –6 V VCEO IC = –50mA –120min V
4
8.4
IC –8 (pulse –12) A hFE VCE = –4V, IC = –3A 70min
16.9
a
PC 35 (Tc=25ºC) W 2.6
0.8
b
Tj 150 ºC Typical Switching Characteristics
3.9
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 1.35
(13.5)
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) 1.35
0.85
–12 4 –3 –10 5 –30 30 2.5 0.4 0.6
2.54 2.54 0.45
2.2
a) Part No.
B C E b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — I B Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VBE = –4V)
–8 –2 –8
A –100mA
mA
A Ic = –3A
0 0m 50m
00
–2 –1
–75mA
–3
–6 –6
Ic = –5A
–50mA
VCE (sat) (A)
IC (A)
IC (A)
–4 –1 –4
–25mA
Tc = –40ºC
–2 Ic = –1A –2 25ºC
IB = –10mA
75ºC
125ºC
0 0 0
0 –1 –2 –3 –4 –5 –10 –50 –100 –500 –1000 –2000 0 –0.5 –1.0 –1.5

(VCE = –4V) (VCE = –4V)
500 500 50
)
ºC
Tc = 125ºC = 25
10
(Ta
(ºC/W)
Typ 75ºC 5 Fin

25ºC NO
hFE
hFE
Tc = 25ºC
100 100 1
j-a
–55ºC 0.5
50 50 Single Pulese
0.1
30 30 0.05
–0.01 –0.05 –0.1 –0.5 –1 –5 –8 –0.01 –0.05 –0.1 –0.5 –1 –5 –8 0.0002 0.001 0.01 0.1 1 10 100
IC (A) IC (A) t (sec)

(VCE = 12V)
30 –12 40
–10
1m
natural air cooling

Silicone grease
se
10
Aluminum heatsink
–5
m
10
Unit: mm
Typ
se
D.
0m
30
c
C
se
20 (T
c
c
=2
W
fT (MHz)
5º
ith
PC (W)
C)
IC (A)
in
fin
–1 20
ite
20
he
0•
at
20
si
10 0•
nk
–0.5 2
10 100
• 10
natural air cooling 0•2
Without heatsink
Without heatsink
0 –0.1 0
0.01 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –150 0 50 100 150
92
Power Transistor MN611S
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220S
Symbol Test Conditions Unit
VCBO 115±10 V min typ max
VCEO 115±10 V ICBO VCB=105V 10 µA 10.2±0.3 4.44±0.2
µA
(1.4)
VEBO 6 V IEBO VEB=6V 10 1.3±0.2
IC ±6 (pulse ±10) A VCEO IC=50mA 105 115 125 V
IB 1 A hFE VCE=1V, IC=1A 400 800 1500 a
1.6
+0.3
10.0 –0.5
50 (Tc=25ºC) VCE (sat) IC=1.2A, IB=12mA 0.08 0.12 V
8.6±0.3
PC W b
1.2 (Ta=25ºC, No Fin) VFEC I FEC=6A 1.25 1.5 V +0.2
0.1 –0.1
(1.5)
Tj 150 ºC ES/B L=10mA 45 mJ
Tstg –55 to +150 ºC 1.27±0.2
+0.3
3.0 –0.5
+0.2
Typical Switching Characteristics 0.86 –0.1 0.4±0.1
1.2±0.2
VCC RL VBB1 VBB2 IC IB1 IB2 ton tstg tf
2.54±0.5 2.54±0.5
(V) (Ω) (V) (V) (A) (mA) (mA) (µs) (µs) (µs)
12 12 10 –5 1 30 –30 0.2typ 5.7typ 0.4typ
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Characteristics (typ.)
(Ta = 25ºC) (Ta = 25ºC)
8 0.75
IC = 2A
7 30mA
6 20mA
VCE (sat) (V)
10mA 0.5
5 IC = 1.2A
IC (A)
4 5mA
3
3mA 0.25
2
1 IB = 1mA IC = 0.5A
0 0
0 1 2 3 4 5 6 0 10 100 1000
VCE (V) IB (mA)
■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) ■ IFEC — VFEC Temperature Characteristics (typ.)
(IC = 1.2A) (VCE = 1V)
0.75 7 7
6 6
5 Ta = 150ºC 5
VCE (sat) (V)
0.5 125ºC Ta = 150ºC

75ºC
IFEC (A)
125ºC
IC (A)
Ta = 150ºC 4 25ºC 4
125ºC 75ºC
–55ºC 25ºC
75ºC 3 3
25ºC –55ºC
0.25
–55ºC 2 2
1 1
0 0 0
0 10 100 1000 0 0.5 1.0 1.5 0 0.5 1.0 1.5
IB (mA) VBE (V) VFEC (V)
■ hFE — IC Characteristics (typ.) (Ta = 25ºC) ■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg •t f — IC Characteristics (typ.)
(VCE = 1V) (VCE = 1V)
5000 5000 10
tstg
ton • tstg • tf (µsec)
typ Ta = 25ºC
1000 1000
VCC = 12V
IB1 = –IB2 = 30mA
hFE
hFE
1
Ta = 150ºC
125ºC
100 100 75ºC tf
25ºC
–55ºC ton
30 30 0.1
0.01 0.1 1 10 0.01 0.1 1 10 0 1 2 3
Ic (A) Ic (A) Ic (A)
■ j-c • j-a — t Characteristics (Single pulse) ■ Safe Operating Area (Single pulse) ■ PT — Ta Derating
(Tc = 25ºC) (Ta = 25ºC)
50 20 60
j-a
10
(ºC/W)
FR4 (70 • 100 • 1.6mm) Use substrate 50

10
40
PC (W)
j-c • j-a
PT =50µs
IC (A)
j-c
1 PT =500µs 30
1 PT =1ms
PT =10ms
20

10
0.001 0.01 0.1 1 10
t (s) 0.1 0
1 10 100 200 0 25 50 75 100 125 150
VCE (V) Ta (ºC) 93
Power Transistor MN638S
VCBO 380±50 V ICBO VCB=330V 10max µA
VCEO 380±50 V IEBO VEB=6V 20max mA 10.2±0.3 4.44±0.2
(1.4)
VEBO 6 V V(BR) CEO IC=25mA 330 to 430 V 1.3±0.2
IC 6 (pulse 10) A hFE VCE=2V, IC=3A 1500min
IB 1 A VCE (sat) IC=4A, IB=20mA 1.5max V a
1.6
+0.3
10.0 –0.5
PC 60 (Tc=25ºC) W
8.6±0.3
b
Tj 150 ºC +0.2
(1.5)
0.1–0.1
1.27±0.2
+0.3
3.0 –0.5
+0.2
0.86 –0.1 0.4±0.1
1.2±0.2
2.54±0.5 2.54±0.5
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — I B Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VBE =4V)
10 3 10
150mA A
120mA A 20m
90m 0mA 18m
A
6
4mA
VCE (sat) (V)
2mA 2
IC (A)
IC (A)
e)
5 IC = 7A 5
re )
ur
IB=1mA
)
ure
at
ra tu
5A
er
rat
3A
mp
pe
pe
1
te
e te m
1A
tem
e
as
(C
se
(C a s
Ca
C
5º
C (
12
– 3 0 ºC
25º
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1.0 2.0 2.4
■ hFE — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) ■ j-c • j-a —t Characteristics
(VCE = 2V) (VCE = 2V)
10000 10000 100
5000 Typ 5000
j-c • j-a (ºC/W)
5ºC
12
1000 1000 ºC 10 j-a
500 25
hFE
hFE
500 5ºC
–5 j-c
100 1
50 100
50
10 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1.0 5 10 0.001 0.01 0.1 1 10
IC (A) IC (A) t (s)
94
Surface-mount Power Transistor SSD103
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SOP8
VCBO 65±5 V min typ max
0.7±0.2
VCEO 65±5 V ICBO VCB = 60V, I E = 0A 10 µA 5.4Max 0 to 10°
VEBO 6 V IEBO VEB = 6V, IC = 0A 10 µA 8 5
IC 6 VCEO IC = 50mA 60 65 70 V
a
IC (pulse) 10 (Pw 1mS, Duty 25%) A hFE VCE = 1V, IC = 1A 400 800 1500
6.2±0.3
4.7Max
b
4.4±0.2
IB 10 A VCE (sat) IC = 1.5A, IB = 15mA 0.11 0.15 V c
0 to 0.1
PC 1.5 *1 W VFEC I FEC = 6A 1.25 1.5 V d
Tj 150 °C Es/b L = 10mH 80 mJ 1 4

+0.15
Tstg –55 to +150 °C 1.27±0.25
+0.15 0.17 –0.05
0.5±0.2
0.42 –0.05
*1: FR4 70mm•100mm• 1.6mm

(drain heatsink copper foil area 25•25mm)
1.5±0.2
5.0±0.2
a) Part No.
b) Corporate mark
c) Lot No.
d) Control No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — I C Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = 1V)
7 0.75 6
30mA
IC/IB = 100
6 20mA
5
10mA
5
0.5 4
VCE (sat) (V)
Ta = 125ºC
4 Ta = –55ºC 75ºC
IC (A)
IC (A)
5mA
25ºC 3 25ºC
3 75ºC –55ºC
3mA
0.25 125ºC 2
2
IB = 1mA 1
1
0 0 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.5 1.0 1.5
VCE (V) IC (A) VBE (V)
■ hFE — IC Temperature Characteristics (typ.) ■ ton • tstg •t f — IC Characteristics (typ.)

(VCE = 1V)
2000 5
tstg
1000
ton• tstg • tf (µS)
VCC = 12V
500 1 IB1 = –IB2 = 30mA
hFE
Ta = 125ºC
0.5
75ºC
25ºC tf
100 –55ºC
ton
50 0.1
0.01 0.1 1 10 0 1 2 3
IC (A) IC (A)
■ Safe Operating Area (Single pulse)

20
0.5m
10
s
5 5, 6, 7, 8
1m
s
10m
s
IC (A)
1 1
0.5
natural air cooling

Without heatsink 2, 3, 4
0.1
1 5 10 50 100
VCE (V)
95
Surface-mount Power Transistor Array SDA03
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SMD-16A
VCEO –60 V IEBO VEB = –6V –10max µA 0.89±0.15 2.54±0.25
1.0±0.3
0.25
+0.15
VEBO –6 V VCEO IC = –25mA –60min V 0.75 –0.05
16 9
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
IC = –2A, IB = –0.1A V
8.0±0.5
IB –1 A VCE (sat) –0.4max
PT 3 (No Fin) W b
0 to 0.15
Tj 150 ºC Typical Switching Characteristics +0.15
0.3 –0.05 Pin 1 20.0max 8
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 19.56±0.2
–12 12 –1 –10 5 –50 50 0.4 1.75 0.22
4.0max
3.6±0.2
1.4±0.2
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics ■ VCE (sat) — IC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = –4V)
–6 –3 –6
–200mA –100mA IC / IB = 20
–50mA
–5 –5
–30mA Ta = 150ºC
–4 –2 –4
VCE (sat) (V)
75ºC Ta = 150ºC
IC (A)
IC (A)
–20mA 25ºC 75ºC
–3 –3 25ºC
–55ºC
–55ºC
–2 –10mA –1 –2
IB = –5mA
–1 –1
0 0 0
0 –1 –2 –3 –4 –5 –0.05 –0.1 –1 –10 0 –0.5 –1.0 –1.5
■ hFE — IC Temperature Characteristics ■ ton • tstg • t f — IC Characteristics ■ j-a — t Characteristics (Single pulse)
(Ta = 25ºC)
1000 5 50
VCE = –4V
ton• tstg• tf (µsec)
500 ton
j-a (ºC/W)
1 VCC = 12V 10
IB1 = –IB2 = 50mA 5
hFE
0.5 tf
100 Ta = 150ºC
75ºC 1
50 25ºC 0.1 tstg
–55ºC
30 0.05 0.3
–0.01 –0.1 –1 –10 –0.5 –0.1 –0.5 –1 –5 –10 0.001 0.01 0.1 1 2
IC (A) IC (A) t (s)
■ Safe Operating Area (Single pulse) ■ PT — Ta Derating

–20 4
–10
1m
s
10 3
m
s Without heatsink 16 14 12 10
20
m
PT (W)
s
IC (A)
2
15 13 11 9
–1
–0.5
1 2 4 6 8
natural air cooling
Without heatsink
–0.1 0
–3 –5 –10 –50 –100 0 50 100 150
VCE (V) Ta (ºC)
96
Surface-mount Power Transistor Array SDA04
VCEO –60 V IEBO VEB = –6V –10max µA 0.89±0.15 2.54±0.25
1.0±0.3
0.25
+0.15
VEBO –6 V VCEO IC = –25mA –60min V 0.75 –0.05
16 9
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
IB –1 IC = –2A, IB = –0.1A –0.4max V
8.0±0.5
A VCE (sat)
PT 2.5 (No Fin) W b
0 to 0.15
Tj 150 ºC Typical Switching Characteristics +0.15
0.3 –0.05 Pin 1 20.0max 8
VCC RL IC VBB1 VBB2 IB1 IB2 t on t stg tf 19.56 ±0.2
–12 12 –1 –10 5 –50 50 0.4 1.75 0.22
4.0max
3.6±0.2
1.4±0.2
a) Part No.
b) Lot No.
(Unit: mm)
(VCE = –4V)
–6 –3 –6
–200mA –100mA IC / IB = 20
–50mA
–5 –5
–30mA Ta = 150ºC
–4 –2 –4
VCE (sat) (V)
75ºC Ta = 150ºC
IC (A)
IC (A)
–20mA 25ºC 75ºC
–3 –3 25ºC
–55ºC
–55ºC
–2 –10mA –1 –2
IB = –5mA
–1 –1
0 0 0
0 –1 –2 –3 –4 –5 –0.05 –0.1 –1 –10 0 –0.5 –1.0 –1.5
■ hFE — IC Temperature Characteristics ■ ton• tstg• t f — IC Characteristics ■ j-a — t Characteristics (Single pulse)
(Ta = 25ºC)
1000 5 50
VCE = –4V
500 ton
j-a (ºC/W)
1 VCC = 12V 10
IB1 = – IB2 = 50mA 5
hFE
0.5 tf
100 Ta = 150ºC
75ºC 1
50 25ºC 0.1 tstg
–55ºC
30 0.05 0.3
–0.01 –0.1 –1 –10 –0.5 –0.1 –0.5 –1 –5 –10 0.001 0.01 0.1 1 2
IC (A) IC (A) t (s)

–20 4
–10
1m
s
10 3
m
s Without heatsink 16 10
20
m
s
PT (W)
IC (A)
2 15 9
–1
–0.5
1 2 8
natural air cooling

Without heatsink
–0.1 0
–3 –5 –10 –50 –100 0 50 100 150
VCE (V) Ta (ºC)
97
Surface-mount Power Transistor Array SDC09
VCBO 65±5 V ICBO VCB = 60V 10max µA
VCEO 65±5 V IEBO VEB = 6V 10max µA 0.89±0.15 2.54±0.25
1.0±0.3
0.25
+0.15
VEBO 6 V VCEO IC = 50mA 60 to 70 V 0.75 –0.05
16 9
IC 6 (pulse 10 *) A hFE VCE = 1V, IC = 1A 400 to 1500
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
8.0±0.5
PT 2.8 W VFEC IFEC = 6A 1.5max V b
0 to 0.15
Tj 150 ºC Es/b L = 10mH, single pulse 80min mJ +0.15
Pin 1 8
0.3 –0.05 20.0max
±0.2
19.56
* PW 100µs, Duty 1%
4.0max
3.6±0.2
1.4±0.2
a) Part No.
b) Lot No.
(Unit: mm)
(VCE = 4V)
8 0.7 6
IC /IB =100
7 IB = 0.6 5
30mA
6
20mA 0.5
4 Ta=150ºC
VCE (sat) (V)
5 100ºC
10mA 0.4 Ta=150ºC
IC (A)
IC (A)
100ºC 75ºC
4 3 25ºC
5mA 0.3 75ºC
–55ºC
3 3mA 25ºC
2
0.2 –55ºC
2
1mA 0.1 1
1
0 0 0
0 1 2 3 4 5 0.0001 0.001 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
■ hFE — IC Temperature Characteristics ■ ton• tstg• t f — IC Characteristics ■ j-a — t Characteristics (Single pulse)
(Use substrate 42•31•1m)
5000 10 10
VCE=1V
tstg
j-a (ºC/W)
1000 VCC =12V

IB1= –IB2 =30mA ton 1
hFE
1
Ta=150ºC tf
100ºC
100 75ºC
25ºC 0.1
–55ºC
50 0.1 0.05
0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 1000

Ta=25ºC Equivalent Circuit Diagram
20 6
10 50• 50 • 1.6mm
Use substrate
0.5 5
5 ms
1 3 4 13 15 16 5 6 8 9 10 12
42•31•1.0mm
1ms 3 Use substrate
PT (W)
IC (A)
0.5 2 14 11
10ms
1
0.1 2 7
0.05 0
0.5 1 5 10 50 100 –50 0 50 100 150
VCE (V) Ta (ºC)
98
Power Transistor Array SLA8004
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SLA 12pin (LF817)
Ratings NPN PNP
Symbol Unit Symbol Unit
NPN PNP Test Conditions Ratings Test Conditions Ratings
31±0.2
VCBO 60 –55 V ICBO VCB = 60V 100max VCB = –55V –100max µA 24.4±0.2
3.2±0.15 •3.8
4.8±0.2
VCEO 60 –55 V IEBO VEB = 6V 60max VEB = –6V –60max mA 16.4±0.2 1.7±0.1
VEBO 6 –6 V VCEO IC = 25mA 60min IC = –25mA –55min V

3.2±0.15
IC 12 –12 A hFE VCE = 1V, IC = 3A 150min VCE = –1V, I C = –3A 80min
12.9±0.2
16±0.2
9.9±0.2
a 2.45±0.2
5±0.5
IB 3 –3 A VCE (sat) IC = 6A, IB = 0.3A 0.35max I C = –6A, IB = –0.3A –0.35max V b (Root dimension)
1.2±0.15 4 – (R1)
5 (Tc=25ºC, No Fin) W VFEC IFEC = 10A 2.5max IFEC = 10A 2.5max V
PT R-end
40 (Tc=25ºC) W +0.2
+0.2
0.55 –0.1
(3)
0.85 –0.1
Tj 150 ºC 4±0.7
1.45±0.15
11• P2.54±0.1= (27.94)
Tstg –55 to +150 ºC (Root dimension)
31.3±0.2
■ IC — VCE Characteristics (typ.) ■ IC — VCE Characteristics (typ.)

(PNP) (N PN )
–12 12 1 2 3 4 5 6 7 8 9 10 11 12
a) Part No.
m A A
m A
–150
A
50
0m
100mA b) Lot No.
–20 B =
1
0m
20
–100mA
I
–10 10 (Unit: mm)
60mA
–8 8
–60mA
IC (A)
IC (A)
40mA
–6 6
–40mA
20mA
–4 4
–20mA
IB = 10mA
–2 –10mA 2
0 0
0 –1 –2 –3 –4 –5 –6 0 2 4 6
VCE (V) VCE (V)
■ hFE — IC Characteristics (typ.) ■ hFE — IC Characteristics (typ.)

(VC E = –1V) (PNP) (VCE = 1V) (N PN )
300 400
Typ Typ
100
100
50
hFE
hFE
10
10
5
2 3
–0.02 –0.1 –1 –10 0.02 0.1 1 10 12
–12
IC (A) IC (A)
■ hFE — IC Temperature Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.)

(VC E = –1V) (PNP) (VCE = 1V) (N PN )
300 400
125ºC
25ºC ºC
–30ºC 125
100
100 ºC
25 C
0º
50 –3
hFE
hFE
10
10
5
2 3
–0.02 –0.1 –1 –10 0.02 0.1 1 10 12
–12
IC (A) IC (A)
■ VCE (sat) — IB Characteristics (typ.) ■ VCE (sat) — IB Characteristics (typ.) Equivalent Circuit Diagram
(PNP) (N PN )
–1.4 1.3
1.0 4 8
–1.0 R2
VCE (sat) (V)
VCE (sat) (V)
IC = –12A 5 9
–9A
–6A R1: 500Ω Typ. 3 7
–3A 0.5 R2: 500Ω Typ. 6 10
–0.5
–1A
12A 2 12
9A
6A
3A R1
IC = 1A 1 11
0 0
–7 –10 –100 –1000 –3000 5 10 100 1000 3000
IB (mA) IB (mA)
99
Surface-mount Power Transistor Array SPF0001
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SPF 20pin
VCBO 115±10 V min typ max 14.74±0.2
VCEO 115±10 V ICBO VCB = 105V 10 µA 13.04±0.2 +0.1
1.0 –0.05
VEBO 6 V IEBO VEB = 6V 10 µA 20 11 Fin

thickness
IC ±6 (pulse ±10) A VCEO IC = 50mA 105 115 125 V
IB 1 A hFE VCE = 1V, IC = 1A 400 800 1500
10.5±0.3
a
7.5±0.2
PT * 2.5 (Ta = 25ºC) W VCE (sat) IC = 1.2A, IB = 12mA 0.08 0.12 V
b
2±0.2
Tj 150 ºC VFEC I FEC = 6A 1.25 1.5 V
Tstg –55 to +150 ºC Es/b L = 10mH 45 mJ 1 10
+0.15
* Use glass epoxy substrate (FR4) 70mm •100mm•1.6mm 1.27±0.25 0.4 –0.05 +0.15
0.25–0.05
2.5±0.2
(11.43)
4-( 0.8)
1 10
(3.05)
F1 F2
(4.7)
■ hFE — IC Temperature Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics (typ.) 20 (2.4) 11 a) Part No.
(VCE = 1V) (IC = 1.2A) b) Lot No.
(13.54)
1000 0.5 (Unit: mm)
500
150°C
VCE (sat) (V)
25°C
100 –55°C 0.25
hFE
150°C
25°C
50
–55°C
10 0
0.1 0.5 1 56 0.001 0.01 0.1 1
IC (A) IB (A)
■ IC — VEC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)

(VCE = 1V)
10 6
5
8
4
6
IC (A)
IC (A)
150°C
3 25°C
150°C
4 25°C –55°C
–55°C 2
2 1
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VEC (V) VBE (V)
■ Safe Operating Area (single pulse) ■ Transient thermal resistance characteristics

(82•36•1mm at the time of mounting the
recommended pattern of the glass epoxy board)
20 100
2 circuits operate 1 circuits
operate
10
0. 2 circuits operate
5m
1m s 10 j-a 1 circuits operate
s
(°C/W)
F1 F2
j-f
IC (A)
1
j-a • j-f
1 3 8
0.1
18,19 12,13
0.1 0.01
1 10 100 200 0.00001 0.0001 0.001 0.01 0.1 1 10 100
VCE (V) Power time (s)
100
Power Transistor Array STA315A
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA3 (LF400A)
20.2±0.2
VCEO 36±5 V IEBO VEB = 6V 2.7max mA
b
9.0±0.2
11.3±0.2
VEBO 6 V VCEO IC = 25mA 31 to 41 V
2.3±0.2
a
IC 2 (pulse 3*) A hFE VCE = 4V, IC = 0.7A 400min
IB 30 mA IC = 0.5A, IB = 5mA 0.2max V
VCE (sat)
4.7±0.5
3 (Ta=25ºC) W IC = 1A, IB = 5mA 0.5max V
PT
13.5 (Tc=25ºC) W VFEC IFEC = 2A 2.5max V 0.5±0.15
(2.54)
Tj 150 ºC RB 800±120 Ω 1.0±0.25
7 •2.54=17.78±0.25
Tstg –55 to +150 ºC RBE 2.0±0.4 kΩ
0.5±0.15
4.0±0.2
1.2±0.2
* PW 1ms, Duty 25% Es/b L = 10mH, single pulse 50min mJ C1.5±0.5
Typical Switching Characteristics 1 2 3 4 5 6 7 8

E B C B C B C E
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf
a) Part No.
b) Lot No.
12 12 1 10 –5 5 0 1.0 8.5 2.5 (Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics ■ VCE (sat) — IC Temperature Characteristics
(IC = 0.5A)
3 0.5 3
A
A
m 8mA IC/IB = 100

30m
12
5mA
2 2
VCE (sat) (V)
VCE (sat) (V)

3mA
IC (A)
Ta = 125ºC Ta = 125ºC
0.25
2mA 75ºC 75ºC
25ºC 25ºC
1 1 –40ºC
IB = 1mA –40ºC
0 0 0
0 1 2 3 4 5 6 1 10 100 400 0 0.5 1 5
VCE (V) IB (mA) IC (A)
■ hFE — IC Temperature Characteristics ■ ton• tstg •t f — IC Characteristics (typ.) ■ j-a — t Characteristics

(VCE = 4V)
3000 50 20
VCC = 12V Single pulse
tstg IB = 5mA
ton • tstg • tf (µS)
1000 10 –IB = 0A 10
(ºC/W)
5
500 tf
hFE
5
Ta = 125ºC
ton
j-a
1
75ºC
25ºC 0.5
100 –40ºC
50 0.1 1
0.01 0.1 0.5 1 4 0 0.5 1.0 1.5 2.0 1 10 100 1000
IC (A) Ic (A) t (ms)
■ Safe Operating Area (single pulse) ■ PT — Ta Derating

(per element)
5 20
1m
s
10
m
s
3 5 7
1
PT (W)
W
IC (A)
ith
inf
10 ini RB 4 6
te
he 2
0.5 at
sin
k
RBE
1 8
Without heatsink
natural air cooling Withou
t heat
sink
0.1 0
1 5 10 50 0 50 100 150
VCE (V) Ta (ºC)
101
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA3 (LF400A)
20.2±0.2
VCEO 35±5 V IEBO VEB = 6V 10max µA
b
9.0±0.2
11.3±0.2
VEBO 6 V VCEO IC = 25mA 35±5 V
2.3±0.2
a
IC 3 A hFE VCE = 4V, IC = 0.5A 500min
IB 1 A VCE (sat) IC = 1A, IB = 5mA 0.5max V
4.7±0.5
2.5 (Ta=25ºC) W Es/b L = 10mH, single pulse 150min mJ
PT
12 (Tc=25ºC) W 0.5±0.15
(2.54)
Tj 150 ºC 1.0±0.25
Typical Switching Characteristics 7•2.54=17.78±0.25
0.5±0.15
4.0±0.2
1.2±0.2
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) C1.5±0.5
12 12 1 10 –5 5 5 1.3 4.7 1.2

1 2 3 4 5 6 7 8
C B E E B C
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics ■ IC — VBE Temperature Characteristics (typ.)
(IC = 1A)
3 1 4
A
A
A 6m 5mA
15m
VCE = 4V
8m
10
4mA
3
3mA
2
VCE (sat) (V)
IC (A)
IC (A)
2mA
0.5 Ta = 125ºC 2
75ºC
IB =1mA 25ºC
1 Ta = –55ºC
–55ºC 1 25ºC
75ºC
125ºC
0 0 0
0 1 2 3 0.002 0.01 0.05 0.1 0.4 0 0.5 1.0 1.5
■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg• t f — IC Characteristics (typ.) ■ j-a — t Characteristics
(VCE = 4V)
5000 20 20
tstg VCE = 12V Single pulse
10
10 IB1 = – IB2 = 5mA
ton • tstg • tf (µS)
5
(ºC/W)
5
1000
hFE
500 1
j-a
Ta = 125ºC tf 0.5
75ºC 1
25ºC 0.5 ton
–55ºC
100 0.3 0.1
0.01 0.05 0.1 0.5 1 3 0.05 0.1 0.5 1 5 0.1 1 10 100 1000 5000

(per element)
10 15
1m
s
5 10 W
m ith
s in
fin
10
0m 10
ite
he
2 7
at
si
nk
PT (W)
(A
IC (A)
ll
ci
DC rc
ui
ts
1 (T op
c= er
at 3 6
25 e)
ºC 5
)
0.5 Withou
t heat
sink (A
ll circui
ts oper
ate) 4 5
0.2 0
2 5 10 50 0 50 100 150
VCE (V) Ta (ºC)
102
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF412)
VCBO 35±5 V ICBO VCB = 30V 10max µA ±0.2
25.25
VCEO 36±5 V IEBO VEB = 6V 2.7max mA

VEBO 6 V VCEO IC = 25mA 31 to 41 V b
±0.2
±0.2
±0.2
9.0
a
11.3
IC 2 (pulse 3*) A hFE VCE = 4V, IC = 0.7A 400min
2.3
IB 30 mA IC = 0.5A, IB = 5mA 0.2max V
±0.5
VCE (sat)
3.5
4 (Ta = 25ºC) W IC = 1A, IB = 5mA 0.5max V
PT ±0.25 ±0.15 (2.54)
18 (Tc = 25ºC) W VFEC IFEC = 2A 2.5max V 1.0 0.5
0
±0.3
0
±0.3
Tj 150 ºC RB 800±120 Ω 9 • 2.54=22.86

±0.05
Tstg –55 to +150 ºC RBE 2.0±0.4 kΩ
±0.2±
±0.15
±0.2
* PW 1ms, Duty 25% Es/b L = 10mH, single pulse 50min mJ ±0.5
C1.5
4.0
1.2
0.5
Typical Switching Characteristics 1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E

(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a) Part No.
b) Lot No.
12 12 1 10 –5 5 0 1.0 8.5 2.5 (Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IB Temperature Characteristics ■ VCE (sat) — IC Temperature Characteristics
(IC = 0.5A)
3 0.5 3
A
A
m 8mA IC /IB = 100

30m
12
5mA
2 2
VCE (sat) (V)
VCE (sat) (V)

3mA
IC (A)
Ta = 125ºC Ta = 125ºC
0.25
2mA 75ºC 75ºC
25ºC 25ºC
1 1 –40ºC
IB = 1mA –40ºC
0 0 0
0 1 2 3 4 5 6 1 10 100 400 0 0.5 1 5
VCE (V) IB (mA) IC (A)
■ hFE — IC Temperature Characteristics ■ ton•tstg•tf — IC Characteristics (typ.) ■ j-a — t Characteristics

(VCE = 4V)
3000 50 20
VCC = 12V Single pulse
tstg IB = 5mA
ton • tstg• tf (µS)
1000 10 –IB = 0A 10
(ºC/W)
5
500 tf 5
hFE
Ta = 125ºC
ton
1
j-a
75ºC
25ºC 0.5
100 –40ºC
50 0.1 1
0.01 0.1 0.5 1 4 0 0.5 1.0 1.5 2.0 1 10 100 1000

(per element)
5 20
1m
s
10
m
s
W
ith
3 5 7 9
in
1
fin
PT (W)
IC (A)
ite
he
10
at
RB 4 6 8
si
nk
2
0.5
RBE
1 10
Without heatsink
natural air cooling With
out h
eatsin
k
0.1 0
1 5 10 50 0 50 100 150
VCE (V) Ta (ºC)
103
Power Transistor Array STA460C
VCBO 60±10 V min typ max ±0.2
25.25
VCEO 60±10 V ICBO VCB = 50V 10 µA

VEBO 6 V IEBO VEB = 6V 10 µA b
±0.2
±0.2
±0.2
9.0
11.3
±6 a
2.3
IC A VCEO IC = 50mA 50 60 70 V
ICP ±10 (Pw 1ms, Du 50%) A hFE VCE = 1V, IC = 1A 700 1500 3000
±0.5
3.5
3.2 (Ta = 25°C) VCE (sat) IC = 1.5A, IB = 15mA 0.09 0.15 V
PT W ±0.25 ±0.15 (2.54)
18 (Tc = 25°C) VFEC IFEC = 6A 1.25 1.5 V 1.0 0.5
0
±0.3
0
±0.3
Tj 150 °C Es/b L = 10mH, single pulse 200 mJ 9•2.54 = 22.86

±0.05
Tstg –40 to +15 °C
±0.15
±0.2
±0.2
±0.5
C1.5
4.0
1.2
0.5
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ hFE — IC Characteristics (typ.) ■ hFE — IC Temperature Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.)
(VCE = 1V) (VCE = 1V) (IC /IB = 100)
10 5000 5000 0.75
9 Ta = 125°C
A
mA typ
0m
8 20
=3
75°C 25°C
IB
7 1000 1000 Ta = –55°C

A 0.5
VCE (sat) (V)

6 10m –55°C 25°C
75°C
IC (A)
500 500
h FE
h FE
5 125°C
5mA
4
3mA 0.25
3
2 100 100
1mA
1 50 50
0 30 30 0
0 1 2 3 4 5 0.01 0.05 0.1 0.5 1 5 10 0.01 0.05 0.1 0.5 1 5 10 0.01 0.05 0.1 0.5 1 5 10
VCE (V) IC (A) IC (A) IC (A)
■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) ■ j-a — PW Characteristics
(VCE = 1V)
0.75 6 20
10
5
5
0.5 4
VCE (sat) (V)
j-a (°C/W)
IC (A)
3 1
0.5
C
125°
0.25 2
–55°C
IC = 3A
25°C
Ta =
1 75°C
1.5A 0.1
0.5A
0 0 0.05
1 5 10 50 100 500 0 0.5 1.0 1.5 0.1 0.5 1 5 10 50 100 500 1000 2000
IB (mA) VBE (V) PW (ms)

■ PT — Ta Derating ■ Safe Operating Area
20 20
Silicone grease used
Vertical self-excitation 3 8
0.5
10
1m
10m
ms
15 5
s
W
s
ith
inf
ini
te
PT (W)
IC (A)
he
10 1 2 7
at
sin
k
0.5
5
Without heatsink
Single pulse 4 9
Ta=25°C
0 0.05
–55 0 50 100 150 0.5 1 5 10 50 100
Ta (ºC) VCE (V)
104
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF400B)
VCBO 65±5 V ICBO VCB = 60V 10max µA 25.25
±0.2

±0.2
±0.2
±0.2
9.0
±6 (pulse ±10) a
11.3
2.3
±0.5
3.2 (Ta = 25ºC) W VFEC IFEC = 6A 1.5max V
4.7
PT
18 (Tc = 25ºC) W Es/b L = 10mH, single pulse 80min mJ 1.0
±0.25 ±0.15
0.5
(2.54)
Tj 150 ºC
±0.05
9 • 2.54=22.86
Tstg –55 to +150 ºC Typical Switching Characteristics
±0.15
±0.2
±0.2
±0.5±
C1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton t stg tf
4.0
1.2
0.5
12 12 1 10 –5 30 –30 0.2 3.9 0.2 1 2 3 4 5 6 7 8 9 10
B C E B C E
a) Part No.
b) Lot No.
(Unit: mm)
■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.)
(VCE = 1V)
7 0.75 6
30mA
IC / IB = 100
6 20mA
5
10mA
VCE (sat) (V)
5
0.5 4 Ta = 125ºC
4 75ºC
IC (A)
5mA Ta = –55ºC
IC (A)
25ºC 3 25ºC
3 75ºC –55ºC
3mA
0.25 125ºC 2
2
IB = 1mA 1
1
0 0 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.5 1.0 1.5
■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics ■ j-a — t Characteristics

(VCE = 1V)
2000 5 10
tstg Single pulse
5
1000
ton•tstg•tf (µS)
(ºC/W)
VCC = 12V
500 1 IB1 = – IB2 = 30mA 1
hFE
Ta = 125ºC
j-a
0.5 0.5
75ºC
25ºC tf
100 –55ºC 0.1
ton
50 0.1 0.05
0.01 0.1 1 10 0 1 2 3 0.1 1 10 100 2000

20 20
0.5m
10
s
5 15
1m
3 8
ith
in
s
10m
fin
ite
PT (W)
he
s
IC (A)
at
si
nk
10
1
2 7
0.5
5
Withou
t heat
Without heatsink sink
natural air cooling 4 9
0.1 0
1 5 10 50 100 0 50 100 150
VCE (V) Ta (ºC)
105
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF400B)
VCBO 115±10 V ICBO VCB = 105V 10max µA 25.25
±0.2

±0.2
±0.2
±0.2
9.0
±6 (pulse ±10) a
11.3
2.3
±0.5
3.2 (Ta=250ºC) W VFEC IFEC = 6A 1.5max V
4.7
PT
18 (Tc=25ºC) W Es/b L = 10mH, single pulse 45min mJ 1.0
±0.25 ±0.15
0.5
(2.54)
Tj 150 ºC
±0.05
9 •2.54=22.86
Tstg –55 to +150 ºC Typical Switching Characteristics
±0.15
±0.2
±0.2
±0.5
C1.5
4.0
1.2
0.5
12 12 1 10 –5 30 –30 0.2 5.7 0.4 1 2 3 4 5 6 7 8 9 10
B C E B C E
a) Part No.
b) Lot No.
(Unit: mm)
(VCE = 1V)
8 0.75 7
I C /IB = 100
7 30mA 6
6 20mA
Ta = 150ºC
VCE (sat) (V)
5
10mA 0.5 75ºC
5
4 25ºC
IC (A)
IC (A)
4 5mA Ta = –55ºC –55ºC

25ºC 3
3 75ºC
3mA 0.25
150ºC 2
2
1 IB = 1mA 1
0 0 0
0 1 2 3 4 5 6 0.01 0.1 1 5 0 0.5 1.0 1.5
■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics ■ j-a — t Characteristics

(VCE = 4V)
2000 10 100
Dual
50 Single pulse
transistor
1000 5 tstg operated
Single
(ºC/W)
transistor
500 10 operated
5
Ta = 150ºC
hFE
1
75ºC
j-a
25ºC 0.5 1
100
–55ºC tf VCC = 12V 0.5
50 ton IB1 = – IB2 = 30mA
30 0.1 0.1
0.01 0.1 1 10 0 1 2 3 0.0001 0.001 0.01 0.1 1 10 100 1000
IC (A) Ic (A) t (s)
■ VCE (sat) — IB Temperature Characteristics (typ.) ■ PT — Ta Derating

(Tc = 25ºC)
0.75 20
IC = 1.2A
15
3 8
W
VCE (sat) (V)
ith
0.5
in
fin
ite
PT (W)
he
Ta = 150ºC
at
si
10
nk
75ºC
25ºC 2 7
0.25 –55ºC
5
Withou
t heat
sink
4 9
0 0
1 10 100 1000 0 50 100 150
IB (mA) Ta (ºC)
106
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4
VCBO 65±5 V min typ max 25.25
±0.2
VCEO 65±5 V ICBO VCB=60V 10 µA

VEBO 6 V IEBO VEB=6V 10 µA b
±0.2
±0.2
±0.2
9.0
a
11.3
IC 6 (pulse 10) A VCEO IC=50mA 60 65 70 V
2.3
IB 1 A hFE VCE=1V, IC=1A 400 800 1500
±0.5
3.5
20 (Tc=25ºC) VCE (sat) IC=1.5A, IB=15mA 0.09 0.15 V
PC W (2.54)
4 (Ta=25ºC) VFEC IFEC=6A 1.25 1.5 V 1.0
±0.25
0.5
±0.15
Tj 150 ºC Es/b L=10mH 80 mJ ±0.05

9 •2.54= (22.86)
Tstg –55 to +150 ºC (Root dimension)
±0.15
±0.2
±0.2
±0.5
C1.5
4.0
1.2
0.5
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)
(VCE = 1V)
7 0.75 6
30mA
I C /IB = 100
6 20mA
5
10mA
VCE (sat) (V)
5
0.5 4 Ta = 125ºC
4 75ºC
IC (A)
5mA Ta= –55ºC
IC (A)
25ºC 3 25ºC
3 75ºC –55ºC
3mA
0.25 125ºC 2
2
IB = 1mA 1
1
0 0 0
0 1 2 3 4 5 0.01 0.1 1 10 0 0.5 1.0 1.5
■ hFE — IC Temperature Characteristics (typ.) ■ ton• tstg • t f — IC Characteristics

(VCE = 1V)
2000 5
tstg
1000
VCC = 12V
500 1 IB1 = – IB2 = 30mA
hFE
Ta = 125ºC
0.5
75ºC
25ºC tf
100 –55ºC
ton
50 0.1
0.01 0.1 1 10 0 1 2 3
IC (A) Ic (A)

20 20
0.5m
10
s
15
W
5
1m
ith
in
s
10m
fin
3 5 7 9
ite
PT (W)
he
s
at
IC (A)
sin
10
k
1 2
4 6 8
0.5 1 10
5
Witho
Without heatsink ut he
atsin
k
natural air cooling
0.1 0
1 5 10 50 100 0 50 100 150
VCE (V) Ta (ºC)
107
MOS FET 2SK3710 (under development)
Features Applications External Dimensions TO220S

● ON resistance 0.0060Ω max. ● Power steering motor
● Built-in G-S bidirectional Zener diode ● Various motors 4.44±0.2
(1.4)
● Trench MOS structure ● Replaces mechanical relays (5) 1.3±0.2
(0.45)
+0.3
10.5 –0.5
9.1±0.3
2.6±0.2
+0.2
0.1 –0.1
1.2±0.2
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics
+0.3
3 –0.5
(Ta=25ºC) +0.2
0.86 –0.1
(1.5)
Symbol Test Conditions Unit 0.4
±0.1
VDSS 60 V min typ max 2.54±0.1 2.54±0.1
VGSS 20 V V(BR) DSS ID = 100µA 60 V

ID 70 A IGSS VGS = ±20V ±10 µA
(1.3)
(5.4)
10.2 ±0.3
ID (pulse) 140 A IDSS VDS = 60V, VGS = 0V 100 µA
PD 130 W VTH VDS = 10V, ID = 250µA 2 4 V
1.4±0.2
EAS 400 mJ RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ
1 2 3
Details of the back (S=2/1)
Tch 150 ºC VSD ISD = 50A 0.9 1.5 V
Tstg –55 to +150 ºC t rr ISD = 25A, di/dt = 50A/µs 110 ns (Unit: mm)
Ciss VDS = 10V 9400 pF
Coss VGS = 10V 1400 pF
Crss f = 1.0MHz 1100 pF
108
MOS FET 2SK3711
Features Applications External Dimensions TO-3P

15.6±0.4
5.0±0.2
13.6
● Trench MOS structure ● Replaces mechanical relays
2.0
2.0±0.1
1.8
9.6
19.9±0.3
a 3.2±0.1
4.0
b
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC)
Symbol Test Conditions Unit 2
VDSS 60 V min typ max
20.0 min
4.0 max
VGSS 20 V V(BR) DSS ID = 100µA 60 V 3
+0.2
ID 70 A IGSS VGS = +20V ±10 µA 1.05 –0.1
+0.2 0.65 –0.1
ID (pulse) 140 A IDSS VDS = 60V, VGS = 0V 100 µA 1.4
5.45±0.1 5.45±0.1
PD 130 W VTH VDS = 10V, ID = 250µA 2 4 V
15.8±0.2
EAS To be defined mJ RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ a) Part No.
1. Gate
Tch 150 ºC VSD ISD = 50A 0.9 1.2 V 2. Drain b) Lot No.
3. Source
Tstg –55 to +150 ºC t rr ISD = 25A, di/dt = 50A/µs 70 ns (1) (2) (3) (Unit: mm)
* 1: PW 100µs, duty cycle 1% Ciss VDS = 10V 7800 pF

* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Coss VGS = 10V 1250 pF
RG = 50Ω f = 1.0MHz
* Contact your sales rep for the details of warranty Crss 990 pF
at Tch = 175°C
■ ID — VDS Characteristics (typ.) ■ ID — VGS Characteristics (typ.) ■ VDS — VGS Characteristics (typ.) ■ Re (yfs) — ID Characteristics (typ.)
(Ta = 25ºC) (VDS = 10V) (VDS = 10V)
80 80 1.0 500
70 70 Tc = –55°C
0.8 25°C
60 60 100 150°C
Re (yfs) (S)
50 10V 50
VDS (V)
0.6
ID (A)
ID (A)
8V Tc = 150°C
40 6V 40 100°C
30 VGS = 5V 30 50°C 0.4
ID = 70A 10
25°C
20 20 0°C
0.2 35A
–40°C
10 10
0 0 0 1
0 0.5 1 0 2 4 6 8 0 5 10 15 20 1 10 70
VDS (V) VGS (V) VGS (V) ID (A)
■ RDS (ON) — I D Characteristics (typ.) Ta = 25ºC ■ RDS (ON) — TC Characteristics (typ.) ID = 35A ■ j-c — Pw Characteristics
VGS = 10V VGS = 10V
7.0 12.0 10
6.0 10.0
RDS (ON) (mΩ)
RDS (ON) (mΩ)
j-c (ºC/W)
5.0
8.0 1
4.0
6.0
3.0
4.0 0.1
2.0
1.0 2.0
0 0 0.01
0 10 20 30 40 50 60 70 –60 –50 0 50 100 150 0.0001 0.001 0.01 0.1 1 10 100
ID (A) Tc (ºC) Pw (sec)
■ Capacitance — VDS Characteristics ■ IDR — VSD Characteristics ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC) (Ta = 25ºC) (With infinite heatsink)
50000 70 500 140
VGS = 0V
f = 1MHz ID (pulse) max 50
60 0µ 120
100
Capacitance (pF)
s(
ED 1s
10000 Ciss IT ho
50 M 100
LI t)
1m
N)
s(
(O
PD (W)
IDR (A)
IC (A)
S
1s
40 RD 80
ho
10
10
Tc = 150°C
t)
ms
30 25°C 60
(1s
1000 –55°C
ho
Coss
t)
20 1 40
Crss
10 20
100 0 0.1 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 0 50 100 150
VDS (V) VSD (V) VDS (V) Tc (ºC)
109
Features Applications External Dimensions TO220S

(1.4)
1.3±0.2
● Trench MOS structure ● Replaces mechanical relays (5)
(0.45)
+0.3
10.5 –0.5
9.1±0.3
2.6±0.2
+0.2
0.1 –0.1
1.2±0.2
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics
+0.3
3 –0.5
(Ta=25ºC) +0.2
0.86 –0.1
(1.5)
Symbol Test Conditions Unit 0.4
±0.1
VDSS 60 V min typ max 2.54±0.1 2.54±0.1
VGSS 20 V V(BR) DSS ID = 100µA 60 V

ID 80 A IGSS VGS = ±20V ±10 µA
(1.3)
(5.4)
10.2±0.3
ID (pulse) 160 A IDSS VDS = 60V, VGS = 0V 100 µA
PD 60 W VTH VDS = 10V, ID = 1mA 1 2 V
1.4±0.2
EAS To be defined mJ RDS (ON) VGS = 10V, ID = 40A 4.0 5.0 mΩ
1 2 3
Tch * 150 ºC VSD ISD = 50A 0.9 1.5 V
Tstg –55 to +150 ºC t rr ISD = 25A, di/dt = 50A/µs To be defined ns (Unit: mm)
* Contact your sales rep for the details of warranty Ciss VDS = 10V 10600 pF
at Tch = 175°C Coss VGS = 10V 1600 pF
Crss f = 1.0MHz 1300 pF
110
MOS FET 2SK3800
VDSS 40 V min typ max 4.44±0.2
1.3±0.2
(1.4)
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 40 V (5)
ID ±70 A IGSS VGS = ±15V ±10 µA

±140 µA
(0.45)
ID (pulse)*1 A IDSS VDS = 40V, VGS = 0V 100
10.5 –0.5
+0.3
9.1±0.3
2.6±0.2
PD 80 (Tc=25ºC) W VTH VDS = 10V, ID = 1mA 2.0 3.0 4.0 V +0.2
0.1 –0.1
EAS*2 400 mJ Re (yfs) VDS = 10V, ID = 35A 30 50 S 1.2±0.2
+0.3
3 –0.5
+0.2
Tch 150 ºC RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ 0.86 –0.1
(1.5)
Tstg –40 to +150 ºC Ciss VDS = 10V 5100 pF 0.4
±0.1
2.54±0.1 2.54±0.1
* 1: PW 100µs, duty cycle 1% Coss f = 1.0MHz 1200 pF
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Crss VGS = 0V 860 pF
RG = 50Ω
(1.3)
(5.4)
t d (on) 100 ns 10.2±0.3
ID = 35A
tr 100 ns
VDD = 20V, RG = 22Ω
1.4±0.2
t d (off) 300 ns
RL = 0.57Ω, VGS = 10V
tf 130 ns 1 2 3
VSD ISD = 50A, VGS = 0V 0.9 1.2 V
ISD = 25A, di/dt = 50A/µs 110 ns (Unit: mm)
t rr
R th (ch-c) 1.56 ºC/W
R th (ch-a) 62.5 ºC/W
(VDS = 10V) (Ta = 25ºC) (VDS = 10V)
70 70 1.0 500
60 60 Tc = –55°C
0.8
100 25°C
50 50
10V 150°C
Re (yfs) (S)
5.5V 0.6
VDS (V)
40 40
ID (A)
ID (A)
5.0V
30 30 0.4
VGS = 4.5V 10
Ta = 150°C ID = 70A
20 20 25°C
0.2 35A
–55°C
10 10
0 0 0 1
0 0.5 1.0 1.5 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 1 10 70
■ RDS (ON) — I D Characteristics (typ.) ■ RDS (ON) — TC Characteristics (typ.) ■ j-c — t Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
Ta = 25ºC ID = 35A
VGS = 10V VGS = 10V (ID = 35A)
7.0 12.0 10 30 15
6.0 10.0 VDS

RDS (ON) (mΩ)
RDS (ON) (mΩ)
5.0
j-c (ºC/W)
8.0 1 20 10
VGS (V)
VDS (V)
4.0 VGS
6.0 VDD = 8V
3.0 12V
14V
4.0 0.1 10 16V 5
2.0 24V
1.0 2.0
0 0 0.01 0 0
0 10 20 30 40 50 60 70 –60 –50 0 50 100 150 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 50 100 150
ID (A) Tc (ºC) t (s) Qg (nC)
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC)
50000 70 500 90
VGS = 0V PT
=1
f = 1MHz 60 0µ 80
100 PT s
ED =1
Capacitance (pF)
IT 00 70
10000 50 M PT µs
LI PT =1 60
Ciss N) =1 m
(O s
S 0m
PD (W)
IDR (A)
40 RD
IC (A)
10 s 50
30 Ta = 150°C 40
1000 Coss 25°C
30
20 –55°C 1
Crss 20
10 10
100 0 0.1 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 0 20 40 60 80 100 120 140 160
111
MOS FET 2SK3801
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO-3P
Symbol Test Conditions Unit 15.6±0.4
5.0±0.2
13.6
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V
2.0
40 V 2.0±0.1
1.8
9.6
ID (pulse)*1 ±140 A IDSS VDS = 40V, VGS = 0V 100 µA
19.9±0.3
PD 100 (Tc=25ºC) W VTH VDS = 10V, ID = 1mA 2.0 3.0 4.0 V 3.2±0.1
4.0
a
EAS*1 400 mJ Re (yfs) VDS = 10V, ID = 35A 30 50 S b
Tch 150 ºC RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ
Tstg –40 to +150 ºC Ciss VDS = 10V 5100 pF
2
20.0 min
* 1: PW 100µs, duty cycle 1% Coss f = 1.0MHz 1200 pF
4.0 max
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Crss VGS = 0V 860 pF 3
+0.2
+0.2 0.65 –0.1
RG = 50Ω t d (on) 100 ns 1.05 –0.1
ID = 35A
tr 100 ns 1.4
VDD = 20V, RG = 22Ω 5.45±0.1 5.45±0.1
t d (off) 300 ns
RL = 0.57Ω, VGS = 10V 15.8±0.2
tf 130 ns 1. Gate a) Part No.
2. Drain b) Lot No.
VSD ISD = 50A, VGS = 0V 0.9 1.5 V 3. Source
(1) (2) (3) (Unit: mm)
t rr ISD = 25A, di/dt = 50A/µs 100 ns
R th (ch-c) 1.25 °C/W
R th (ch-a) 35.71 °C/W
(VDS = 10V) (Ta = 25ºC) (VDS = 10V)
70 70 1.0 1000
60 60
0.8 Tc = –55°C
50 50 25°C
10V 100
Re (yfs) (S)
5.5V 0.6 150°C
VDS (V)
ID (A)
ID (A)
40 40
5.0V
30 30 0.4
VGS = 4.5V
Ta = 150°C ID = 70A 10
20 20 25°C
–55°C 0.2 35A
10 10
0 0 0 1
0 0.5 1.0 1.5 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 1 10 70
■ RDS (ON) — I D Characteristics (typ.) ■ RDS (ON) — TC Characteristics (typ.) ■ j-c — Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
Ta = 25ºC ID = 35A
VGS = 10V VGS = 10V (ID = 35A)
7.0 10.0 10 30 15
6.0 VDS
8.0
RDS (ON) (mΩ)
RDS (ON) (mΩ)
5.0
1 20 10
j-c (ºC/W)
VDS (V)
VGS (V)
6.0 VGS
4.0
VDD = 8V
3.0 12V
4.0 14V
0.1 10 16V 5
2.0 24V
2.0
1.0
0 0 0.01 0 0
0 10 20 30 40 50 60 70 –60 –50 0 50 100 150 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 50 100 150
ID (A) Tc (ºC) Pw (s) Qg (nC)
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC)
50000 70 500 120
VGS = 0V PT
=1
f = 1MHz 60 0µ
100 PT s 100
ED =1
Capacitance (pF)
10000 IT 00
50 LI
M PT µs
PT =1 80
Ciss N) =1 m
(O
S 0m s
PD (W)
IDR (A)
RD
IC (A)
40 s
10
60
30 Ta = 150°C
1000 Coss 25°C
40
20 –55°C 1
Crss
10 20
100 0 0.1 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 0 20 40 60 80 100 120 140 160
112
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 40 V 10.2±0.3 4.44±0.2
±85 VGS = ±15V ±10 µA
(1.4)
ID A IGSS 1.3±0.2
PD 100 (Tc=25ºC) W VTH VDS = 10V, ID = 1mA 2.0 4.0 V a
1.6
+0.3
10.0 –0.5
EAS*2 730 mJ Re (yfs) VDS = 10V, ID = 42A 50 S
8.6±0.3
b
Tch 150 ºC RDS (ON) VGS = 10V, ID = 42A 2.1 3.0 mΩ +0.2
(1.5)
0.1–0.1
Coss f = 1.0MHz 2400 pF 1.27±0.2
* 1: PW 100µs, duty cycle 1%
+0.3
3.0 –0.5
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Crss VGS = 0V 1900 pF +0.2
0.86 –0.1 0.4±0.1
RG = 50Ω t d (on) 90 ns 1.2±0.2
ID = 42A
tr 230 ns 2.54±0.5 2.54±0.5
VDD = 20V, RG = 22Ω
t d (off) 490 ns
VGS = 10V
tf 760 ns a) Part No.
b) Lot No.
VSD ISD = 50A, VGS = 0V 0.85 1.2 V
(Unit: mm)
t rr ISD = 25A, di/dt = 50A/µs 90 ns
113
MOS FET 2SK3851
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO-3P
Symbol Test Conditions Unit 15.6±0.4
5.0±0.2
13.6
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V
2.0
60 V 2.0±0.1
1.8
9.6
19.9±0.3
PD 150 W VTH VDS = 10V, ID = 1mA 2.0 2.5 3.0 V 3.2±0.1
4.0
a
EAS*2 280 mJ Re (yfs) VDS = 10V, ID = 42A 30 S b
Tch 150 ºC RDS (ON) VGS = 10V, ID = 42A 4.0 4.7 mΩ
2
20.0 min
Coss f = 1.0MHz 1500 pF
4.0 max
* 1: PW 100µs, duty cycle 1%
Crss VGS = 0V 1100 pF 3
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped +0.2
+0.2 0.65 –0.1
t d (on) ID = 42A 60 ns 1.05 –0.1
tr VDD 16V 25 ns 1.4
5.45±0.1 5.45±0.1
t d (off) RG = 22Ω 370 ns
15.8±0.2
tf VGS = 10V 65 ns 1. Gate a) Part No.
2. Drain b) Lot No.
VSD ISD = 50A, VGS = 0V 0.87 1.5 V 3. Source
(1) (2) (3) (Unit: mm)
t rr ISD = 50A, di/dt = 100A/µS 70 ns
■ ID — VDS Characteristics ■ ID — VGS Characteristics ■ VDS — VGS Characteristics ■ Re (yfs) — ID Characteristics

(Ta = 25ºC) (VDS = 10V) (Ta = 25ºC) (VDS = 10V)
90 100 1.0 500
80 10V
70 80 0.8
100
4.5V
Re (yfs) (S)
60
VDS (V)
60 0.6
ID (A)
ID (A)
50
Ta = 150°C –55°C
40 25°C
40 0.4 25°C
VGS = 4.0V –55°C ID = 85A 10 150°C
30
20 20 0.2 ID = 42A
10
0 0 0 1
0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18 1 5 10 50 100
■ RDS (ON) — I D Characteristics Ta = 25ºC

■ RDS (ON) — TC Characteristics VGS = 10V ■ j-c — t Characteristics (Single pulse)
VGS = 10V ID = 25A
6.0 8.0 10
7.0
5.0
RDS (ON) (mΩ)
RDS (ON) (mΩ)
6.0
j-c (ºC/W)
4.0 1
5.0
3.0 4.0
2.0 3.0
0.1
2.0
1.0
1.0
0 0 0.01
0 10 20 30 40 50 60 70 80 90 –100 –50 0 50 100 150 0.0001 0.001 0.01 0.1 1 10
ID (A) Tc (ºC) t (s)
■ Capacitance — VDS Characteristics ■ IDR — VSD Characteristics ■ PD — TC Characteristics

(Ta = 25ºC)
50000 90 160
Ta = 25°C
VGS = 0V 80 140
f = 1MHz
70
Capacitance (pF)
120
Ciss 60 Ta = 150°C
10000 100
25°C
PD (W)
IDR (A)
50 –55°C
80
40
60
30
40
20
1000 Coss 20
Crss 10
500 0 0
0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150
VDS (V) VSD (V) Tc (ºC)
114
MOS FET FKV460S
VGSS +20, –10 V V(BR) DSS ID = 100µA, VGS = 0V 40 V 10.2±0.3 4.44±0.2
±60
(1.4)
ID A VGS = +20V +10 1.3±0.2
IGSS µA
ID (pulse)* ±180 A VGS = –10V –5
PD 60 (Tc=25ºC) W IDSS VDS = 40V, VGS = 0V 100 µA a
1.6
+0.3
10.0 –0.5
Tch 150 ºC VTH VDS = 10V, ID = 250µA 1.3 2.3 V
8.6±0.3
b
Tstg –55 to +150 ºC Re (yfs) VDS = 10V, ID = 25A 20.0 S +0.2
(1.5)
0.1–0.1
* PW 100µs, duty 1% RDS (ON) VGS = 10V, ID = 25A 7 9 mΩ
Ciss 2800 pF 1.27±0.2
VDS = 10V
+0.3
3.0 –0.5
+0.2
Coss f = 1.0MHz 1400 pF 0.86 –0.1 0.4±0.1
Crss VGS = 0V 600 pF 1.2±0.2
t d (on) 20 ns 2.54±0.5 2.54±0.5

ID = 25A
tr VDD = 12V 600 ns
t d (off) RL = 0.48Ω 250 ns a) Part No.
tf VGS = 10V 100 ns b) Lot No.
(Unit: mm)
VSD ISD = 50A, VGS = 0V 1.0 1.5 V
■ ID — VDS Characteristics (typ.) ■ ID — VGS Characteristics (typ.) ■ VDS — VGS Characteristics (typ.) ■ Re (yfs) — ID Characteristics
60 70 1.0 500
3.5V
60
50
10V 0.8 –55ºC
5.0V 50 25ºC
40 4.0V 100
Re (yfs) (S)
0.6 150ºC
VDS (V)
40
ID (A)
ID (A)
30 50
30 Ta = 150ºC ID = 60A
VGS = 3.0V 0.4
25ºC
20
20 –55ºC
0.2 25A
10 10 10
10A
0 0 0 5
0 1 2 3 4 5 0 1 2 3 4 0 5 10 15 20 1 5 10 60
■ RDS (ON) — I D Characteristics Ta = 25ºC

■ RDS (ON) — TC Characteristics VGS = 10V ■ j-c • j-a — t Characteristics (Single pulse)
VGS = 10V ID = 25A
14 14 50
12 12 j-a
(ºC/W)
10 FR4 (70 • 100 • 1.6mm)

RDS (ON) (mΩ)
RDS (ON) (mΩ)
10 10 Use substrate
8.0 8.0 j-c
j-a
1
6.0 6.0
j-c •
4.0 4.0 0.1

2.0 2.0
0 0 0.01
0 10 20 30 40 50 60 –60 –50 0 50 100 150 0.0001 0.001 0.01 0.1 1 10
ID (A) Tc (ºC) t (s)
■ Capacitance — VDS Characteristics ■ IDR — VSD Characteristics ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC) (Ta = 25ºC)
10000 60 200 70
VGS = 0V ID (pulse) max PT
f = 1MHz 10V 100 =1
50 ED m 60
IT s
IM PT
L
Capacitance (pF)
5V =1
N)
Ciss (O 0m 50
40 DS s
R
10
PD (W)
40
IDR (A)
IC (A)
1000 Coss 30
VGS = 10V 30
20 1
Crss 20
10 10
100 0 0.1 0
0 10 20 30 35 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 50 0 25 50 75 100 125 150
115
MOS FET FKV660S
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics ( Ta=25ºC) External Dimensions TO220S
VGSS +20, –10 V V(BR)DSS ID=100µA, VGS=0V 60 V 10.2±0.3 4.44±0.2
ID ±60 A VGS =+20V +10
(1.4)
1.3±0.2
IGSS µA
ID(pulse) ±180 A VGS =–10V –5
PD 60(Tc=25ºC) W IDSS VDS=60V, VGS=0V 100 µA a
1.6
+0.3
10.0 –0.5
Tch 150 ºC VTH VDS=10V, ID=250µA 1.0 2.5 V
8.6±0.3
b
Tstg –40 to +150 ºC Re (yfs) VDS=10V, ID=25A 20 S +0.2
(1.5)
0.1– 0.1
PW 100µs, duty 1% RDS(ON) VGS=10V, ID=25A 11 14 mΩ
Ciss VDS=10V 2500 pF 1.27±0.2
+0.3
3.0 –0.5
+0.2
Coss f=1.0MHz 900 pF 0.86 – 0.1 0.4±0.1
Crss VGS=0V 150 pF 1.2±0.2
t d(on) 50 ns 2.54±0.5 2.54±0.5
ID=25A
tr VDD=12V 400 ns
t d(off) RL=0.48Ω 400 ns a) Part No.
tf VGS=10V 300 ns b) Lot No.
VSD ISD=50A, VGS=0V 1.0 1.5 V (Unit : mm)
■ ID — VDS Characteristics ■ ID — VGS Characteristics ■ VDS — VGS Characteristics ■ Re (yfs) — ID Characteristics

180 1000 1.4 1000
160 1.2
10V 100
6V –55°C
140
4.5V 1.0 25°C
Re (yfs) (S)
120 10 100 150°C
VDS (V)
ID (A)
ID (A)
100 0.8
4V ID = 60A
1
80 Ta = 150°C 0.6
100°C
60 VGS = 3.5V 0.1 50°C 10
0.4
25°C 25A
40
0.01 0°C
–55°C 0.2
20 10A
0 0.001 0 1
0 2 4 6 8 10 12 0 1 2 3 4 5 6 0 5 10 15 20 1 10 100 200
■ RDS (ON) — I D Characteristics ■ RDS (ON) — TC Characteristics ■ Capacitance — VDS Characteristics

(Ta = 25ºC) (ID = 25A) (Ta = 25ºC)
0.030 0.030 10000
VGS = 0V
0.025 0.025 f = 1MHz
Capacitance (pF)
RDS (ON) (Ω)
RDS (ON) (Ω)
0.020 0.020
VGS = 4V Ciss
VGS = 4V
0.015 0.015
VGS = 10V 1000
0.010 VGS = 10V 0.010
0.005 0.005 Coss

0 0
1 10 100 200 –60 –50 0 50 100 150 Crss
ID (A) Tc (ºC) 100
0 10 20 30 40 50
VDS (V)
■ IDR — VSD Characteristics Ta = 25ºC ■ Safe Operating Area (single pulse)

VGS = 0V (Ta = 25ºC)
180 500
160 ID (pulse) max
140 100
ED PT
120 IT =1
LIM PT m
N) =1 s
IDR (A)
ID (A)
(O 0m
100 10 DS
R s
80
60
1
40
20
0 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100
VSD (V) VDS (V)
116
Surface-mount MOS FET Array SDK06
VDSS 52±5 V min typ max
VGSS ±20 V V(BR) DSS ID = 1mA, VGS = 0V 47 52 57 V 0.89±0.15 2.54±0.25
1.0±0.3
0.25
±3 VGS = ±20V ±1.0 µA
+0.15
ID A IGSS 0.75 –0.05
16
µA
9
ID (pulse) *1 ±6 A IDSS VDS = 40V, VGS = 0V 100
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
PT W VTH VDS = 10V, ID = 250µA 1.0 1.8 2.5 V
8.0±0.5
3 (Tc=25ºC, 4 circuits operate)
EAS *2 40 mJ Re (yfs) VDS = 10V, ID = 1.0A 1.0 S b
0 to 0.15
Tch 150 ºC VGS = 10V, ID = 1.0A 0.2 0.25 Ω +0.15
Pin 1 8
RDS (ON) 0.3 –0.05 20.0max
Tstg –55 to +150 ºC VGS = 4V, ID = 1.0A 0.25 0.3 Ω
±0.2
*1 PW 100µs, duty 1% Ciss VDS = 10V 200 pF 19.56
*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω Coss f = 1.0MHz 120 pF
4.0max
VGS = 0V
3.6±0.2
Crss 20 pF
t d (on) ID = 1A 2.0 µs
1.4±0.2
tr VDD 12V 7.4 µs
RL = 12Ω
t d (off) VGS = 5V 3.3 µs a) Part No.
tf RG1 = 50Ω, RG2 = 10kΩ 4.2 µs b) Lot No.
VSD ISD = 1A, VGS = 0V 1.0 1.5 V (Unit: mm)
■ ID — VDS Characteristics ■ ID — VGS Characteristics ■ R DS (ON) — I D Characteristics

6 20 0.8
VGS = 4V
10 VDS = 10V VGS = 4V
5 Ta = 150ºC
VGS = 5V
0.6
VGS = 10V
4
RDS (ON) (Ω)

1 75ºC
ID (A)
ID (A)
25ºC
3 0.4
2 –55ºC
0.1 Ta = –55ºC
VGS = 3V 0.2
25ºC
1
75ºC
150ºC
0 0.01 0
0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 0 1 2 3 4 5 6
VDS (V) VGS (V) ID (A)
■ R DS (ON) — TC Characteristics ■ Re (yfs) — I D Characteristics ■ I DR — VSD Characteristics

0.5 10 10
ID = 1A VDS = 10V
VGS = 4V 5
0.4 8
typ.
RDS (ON) (Ω)
Re (yfs) (S)
0.3 6 Ta = 150ºC
IDR (A)
75ºC
VGS = 10V 25ºC
0.2 1 Ta = –55ºC 4
typ. –55ºC
25ºC
0.5 150ºC
0.1 2
0 0.2 0
–50 0 50 100 150 0.05 0.1 0.5 1 6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tc (ºC) ID (A) VSD (V)
■ Safe Operating Area (single pulse) Equivalent Circuit Diagram

(Tc = 25ºC)
10
ID (pulse) max 10
0µ
5 s
ED 1m
IT
LI
M s
n)
(o
S
D
10
R
m
15 16 13 14 11 12 9 10
s
ID (A)
1
1 3 5 7
0.5
2 4 6 8
0.1
0.5 1 5 10 50
VDS (V)
117
Symbol Ratings
Unit Ratings
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 50 V 0.89±0.15 2.54±0.25
1.0±0.3
0.25
±4.5 VGS = ±20V ±100
+0.15
ID A IGSS nA 0.75 –0.05
16 9
ID (pulse) *1 ±9 A IDSS VDS = 50V, VGS = 0V 100 µA
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
V
8.0±0.5
PT
4 (Tc=25ºC, 4 circuits operate) W VTH VDS = 10V, ID = 1mA 1.3 1.8 2.3
EAS *2 80 mJ Re (yfs) VDS = 10V, ID = 4.0A 5.0 9.0 13.0 S b
0 to 0.15
Tch 150 ºC VGS = 10V, ID = 4.0A 0.07 0.08 Ω +0.15
Pin 1 8
RDS (ON) 0.3 –0.05 20.0max
Tstg –55 to +150 ºC VGS = 4V, ID = 4.0A 0.09 0.1 Ω
±0.2
*1 PW 100µs, duty 1% Ciss VDS = 10V 700 pF 19.56
*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Coss f = 1.0MHz 300 pF
4.0max
VGS = 0V
3.6±0.2
Crss 90 pF
t d (on) ID = 4A 50 ns
1.4±0.2
tr VDD 12V 80 ns
RL = 3Ω
t d (off) VGS = 5V 60 ns a) Part No.
tf RG = 50Ω 40 ns b) Lot No.
(Unit: mm)
VSD ISD = 6A, VGS = 0V 1.0 1.5 V
■ ID — VDS Characteristics (typ.) ■ ID — VGS Characteristics ■ VDS — VGS Characteristics (typ.) ■ Re (yfs) — ID Characteristics
(Ta = 25ºC) (VDS = 10V) (ID = 4A) (VDS = 10V)
18 20 1.4 100
VGS = 4V 10
16 1.2 Ta = 150°C
75°C Ta = 150°C
14
1 1.0 25°C 25°C
12 10
Re (yfs) (S)
0°C –55°C
VGS = 10V
VDS (V)
0.8
ID (A)
ID (A)
10 –55°C
8 0.1
Ta = 150°C 0.6
6 VGS = 3V 75°C 1
25°C 0.4
4 0.01
0°C
–55°C 0.2
2
0 0.001 0 0.1
0 3 6 9 12 15 0 1 2 3 4 5 0 2 4 6 8 10 0.05 0.1 1 10
■ RDS (ON) — I D Characteristics ■ RDS (ON) — I D Characteristics ■ RDS (ON) — TC Characteristics (typ.) ■ S/W Time W — ID Characteristics
(VGS = 10V) (VGS = 4V) (ID = 4A) (single pulse) (Ta = 25ºC)
0.20 0.20 0.20 500
Ta = 150°C VDD = 12V constant
75°C RGS = 50Ω
25°C Ta = 150°C VGS = 5V
S/W Time (ns)
0.15 0.15 0.15

0°C
RDS (ON) (Ω)
RDS (ON) (Ω)
RDS (ON) (Ω)
–55°C 100 tr
75°C VGS = 4V t d (off)
0.10 0.10 0.10 t d (on)
25°C tf
0°C
VGS = 10V
0.05 0.05 –55°C 0.05
10
0 0 0 5
0 2 4 6 8 10 12 0 2 4 6 8 10 12 –60 –50 0 50 100 150 0.1 0.5 1 5 10
ID (A) ID (A) Tc (ºC) ID (A)

■ Capacitance — VDS Characteristics ■ ISD — VSD Characteristics (typ.) ■ PT — Ta Characteristics
(Ta = 25ºC)
5000 8 4
VGS = 0V
f = 1MHz 7
4 circuits operate
Capacitance (pF)
1000 6 3 3 circuits operate 15 16 13 14 11 12 9 10
Ciss 2 circuits operate

5
P T (W)
ISD (A)
1 circuits operate
Ta = 150°C
4 75°C 2 1 3 5 7
100 Coss 25°C
3 0°C
–55°C 2 4 6 8
Crss 2 1
1
10
5 0 0
0.1 1 10 100 0 0.3 0.6 0.9 1.2 1.5 0 50 100 150
VDS (V) VSD (V) Ta (ºC)
118
VGSS ±20 V V(BR) DSS ID=100µA, VGS=0V 120 V 0.89±0.15 2.54±0.25
1.0±0.3
0.25 +0.15
ID ±6 A IGSS VGS=±20V ±5 µA 0.75 –0.05
16 9
ID (pulse) *1 ±10 A IDSS VDS=120V, VGS=0V 100 µA
a
9.8±0.3
6.8max
3.0±0.2
6.3±0.2
V
8.0±0.5
PT 3 (Tc=25ºC, 4 circuits operate) W VTH VDS=10V, ID=250µA 1.0 2.0
EAS *2 80 mJ Re (yfs) VDS=10V, ID=4A 5.0 S b
0 to 0.15
Tch 150 ºC VGS=10V, ID=4A 0.15 0.2 +0.15
RDS (ON) Ω 0.3 –0.05 Pin 1 20.0max 8
Tstg –55 to +150 ºC VGS=4V, ID=4A 0.2 0.25
±0.2
*1 PW 100µs, duty 1% Ciss VDS=10V 400 pF 19.56
*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Coss f=1.0MHz 130 pF
4.0max
VGS=0V
3.6±0.2
Crss 30 pF
t d (on) ID=4A 100 ns
1.4±0.2
tr VDD=12V 300 ns
RL=3Ω
t d (off) VGS=5V 250 ns a) Part No.
tf RG=50Ω 200 ns b) Lot No.
(Unit: mm)
VSD ISD=6A, VGS=0V 1.0 1.5 V

16 10 0.30
VGS=10V
VDS=10V
0.25
8
12 VGS=4.5V VGS=4V
0.20
RDS (ON) (Ω)

6
ID (A)
ID (A)
8 0.15
Ta=–55ºC VGS=10V
4 25ºC
75ºC 0.10
4 150ºC
2
0.05
0 0 0
0 1 2 3 4 5 6 0 1.0 2.0 3.0 4.0 0 2 4 6 8 10

0.45 50 6
ID=4A VGS=0V
0.40 VGS=4V
5
10
Ta=150ºC
0.30 4
75ºC
RDS (ON) (Ω)
5
Re (yfs) (S)
IDR (A)
25ºC
3 –55ºC
0.20 VGS=10V
Ta=–55ºC
1
25ºC 2
0.5 75ºC
0.10
150ºC 1
0 0.1 0
–50 0 50 100 150 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
■ Capacitance — VDS Characteristics ■ Safe Operating Area (single pulse) Equivalent Circuit Diagram
(Ta = 25ºC)
1000 20
ID (pulse) max
500 10 10
Ciss 0µ
ID (DC) max s
5 1m
Capacitance (pF)
10 s 15 16 13 14 11 12 9 10
VGS =0V RDS (on) LIMITED m
s
f=1MHz 10
ID (A)
0m
100 s
Coss 1
1 3 5 7
50
0.5
2 4 6 8
Crss
10 0.1
0 10 20 30 40 50 1 5 10 50 100 200
VDS (V) VDS (V)
119
MOS FET Array SLA5027
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SLA 12pin (LF800)
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 60 V 31.0±0.2 Ellipse 3.2±0.15 • 3.8
3.2±0.15 24.4±0.2 4.8±0.2
ID ±12 A IGSS VGS = ±20V ±100 µA 16.4±0.2 1.7±0.1

resins 0.8 max
5 (Ta=25ºC, 4 circuits operate) W VTH VDS = 10V, ID = 1mA 1.0 1.5 2.0 V
16.0±0.2
13.0±0.2
PT
8.5max
12.0
9.9±0.2
60 (Tc=25ºC,4 circuits operate) W Re (yfs) VDS = 10V, ID = 8A 6.0 S a
b
EAS*2 250 mJ RDS (ON) VGS = 4V, ID = 8A 0.07 0.08 Ω
9.5min (10.4)
2.08 ºC/W Ciss 1100 pF
2.7
j-c VDS = 10V Pin 1 12
VISO (Fin to lead terminal) AC1000 Vrms Coss f = 1.0MHz 500 pF 0.85
+0.2
2.2±0.7
–0.1 +0.2
0.55
1.2±0.15
–0.1
Tch 150 ºC Crss VGS = 0V 170 pF 1.45±0.15

11•P2.54±0.7 =27.94±1.0
Tstg –55 to +150 ºC t d (on) ID = 8A 50 ns
*1 PW 250µs, duty 1% tr VDD 30V 250 ns 31.5 max
RL = 3.75Ω
*2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω t d (off) VGS = 5V 250 ns
tf RG = 50Ω 180 ns 1 2 3 4 5 6 7 8 9 10 11 12 a) Part No.
VSD ISD = 10A, VGS = 0V 1.0 1.5 V b) Lot No.
(Unit: mm)

10 12 0.1
VDS = 10V
10
8
4V VGS = 4V
5V
10V 8
RDS (on) (Ω)

6
ID (A)
ID (A)
VGS = 3V 6 0.05 VGS = 10V

Ta = 150ºC
4 75ºC
4 25ºC
–55ºC
2
2
0 0 0
0 1 2 3 4 5 6 0 1 2 3 4 0.1 1 10 20

0.12 30 20
VGS = 4V VDS = 10V VGS = 0V

10
0.10
5
RDS (ON) (Ω)
Re (yfs) (S)
10
IDR (A)
VGS = 10V
1
0.06
5
0.5
0.02 2 0.1
–50 0 50 100 150 0.4 1 5 10 20 0 0.4 0.8 1.2
(Ta = 25ºC)
2000 50
ID (pulse) max
VGS = 0V
ED
ne
f = 1MHz
0.
V li
IT
M
=4
5m
1000
LI
GS
Ciss
n)
dV
s
1m
(o
me
S
su
D
Capacitance (pF)
10
s
R
As
10 ID (DC) max
s
3 6 7 10
500
10
0m
Coss
ID (A)
5
1 4 8 11
2 5 9 12
100 Crss
1
50 0.5
1 5 10 50 0.5 1 5 10 50 100
VDS (V) VDS (V)
120
MOS FET Array SLA5098 (under development)
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 40 V 31.0±0.2 Ellipse 3.2±0.1 • 3.8
3.2±0.1 24.4±0.2 4.8±0.2
ID 20 A IGSS VGS = ±15V ±10 µA 16.4±0.2 1.7±0.1
ID (pulse)* 40 A IDSS VDS = 40V, VGS = 0V 100 µA

resins 0.8 max
EAS To be defined mJ VTH VDS = 10V, ID = 250µA 1.5 2.5 V
16.0±0.2
13.0±0.2
9.9±0.2
8.5max
IAS To be defined A Re (yfs) VDS = 10V, ID = 10A 10 S a
b
5( Without heatsink, Ta=25°C,
) RDS (ON) VGS = 10V, ID = 10A 17 mΩ
9.5min (10.4)
All circuits operate W
PT Ciss 1450 pF
2.7
VDS = 10V
Tc=25°C,
90 ( All circuits operate ) W Pin 1 15
Coss f = 1.0MHz 420 pF +0.2
+0.2
0.65 –0.1 0.55 –0.1 2.2±0.7
1.2±0.15
Tch 150 ºC Crss VGS = 0V 260 pF
+0.2
1.15 –0.1
14•P2.03±0.4 = 28.42±0.8
Tstg –55 to +150 ºC t d (on) ID = 10A 40 ns
* PW 100µs, duty 1% tr VDD = 14V 40 ns 31.5 max
RL = 1.4Ω
t d (off) VGS = 10V 200 ns
tf RG = 50Ω 100 ns 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 a) Part No.
b) Lot No.
VSD ISD = 10A, VGS = 0V 0.85 1.2 V
(Unit: mm)
ISD = 10A, VGS = 0V
t rr 45 ns
di/dt = 100A/µs
4 9 14
5 10 15
3 8 13
2 7 12
1 6 11
121
MOS FET Array SMA5113
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions SMA (LF1000)
4.0±0.2
VGSS ±30 V V(BR) DSS ID = 100µA, VGS = 0V 450 V 31.0±0.2
2.5±0.2
ID ±7 A IGSS VGS = ±30V ±100 nA
ID (pulse) *1 ±28 A IDSS VDS = 450V, VGS = 0V 100 µA 30º
10.2±0.2
b
4 (Ta=25ºC, All circuits operate, No Fin) W VTH VDS = 10V, ID = 1mA 2.0 4.0 V a
2.4
PT
35 (Tc=25ºC, All circuits operate, ∞ Fin) W Re (yfs) VDS = 20V, ID = 3.5A 3.5 5.0 S 1.21±0.15
(10.4)
EAS *2 130 mJ RDS (ON) VGS = 10V, ID = 3.5A 0.84 1.1 Ω 1.46±0.15
IAS 7 A Ciss VDS = 10V 720 pF +0.2

0.85 –0.1 +0.2
0.55 –0.1 1.2±0.1
j-a 31.2 Junction - Ambientare,
ºC/W Coss f = 1.0MHz 150 pF 11• P2.54±0.1=27.94
Ta=25ºC, All circuits operate
Crss VGS = 0V 65 pF
Junction - Case,
j-c 3.57 Ta=25ºC, All circuits operate ºC/W t d (on) ID = 3.5A 25 ns 31.5 max
Tch 150 ºC tr VDD 200V 40 ns (Including both-side resin burr)

RL = 57Ω
Tstg –55 to +150 ºC t d (off) VGS = 10V 70 ns
1 2 3 4 5 6 7 8 9 10 11 12
*1 PW 100µs, duty 1% tf RG = 50Ω 50 ns a) Part No.
*2 VDD = 30V, L = 5mH, IL = 7A, unclamped, VSD ISD = 7A, VGS = 0V 1.0 1.5 V b) Lot No.
RG = 50Ω (Unit: mm)
■ ID — VDS Characteristics ■ ID — VGS Characteristics ■ RDS (ON) — ID Characteristics

7 7 1.5
10V 5.5V VGS = 10V
VDS = 20V
6 6
5 5
1.0
RDS (ON) (Ω)

4 4
ID (A)
ID (A)
5V
3 3
0.5
2 VGS = 4.5V 2 Ta = –55ºC
25ºC
1 1 150ºC
0 0 0
0 5 10 15 20 0 2 4 6 8 10 0 1 2 3 4 5 6 7
■ RDS (ON) — TC Characteristics ■ Re (yfs) — ID Characteristics ■ IDR — VSD Characteristics

2.5 100 7
VGS = 10V VDS = 20V VGS = 0V
ID = 3.5A 6
2.0 50
5
RDS (ON) (Ω)
Re (yfs) (S)
1.5
4
IDR (A)
Ta = –55ºC 3
1.0 10
25ºC
150ºC
2
5
0.5
1
0 2 0
–50 0 50 100 150 0.05 0.1 0.5 1 7 0 0.2 0.4 0.6 0.8 1.0
(Ta = 25ºC)
1000 50
Ciss ID (pulse) max
500 10
0µ
10 ID (DC) max ED s
IT
Capacitance (pF)
VGS = 0V IM 1m
n )L s
f = 1MHz 5 (o
RD
S 10 3 6 7 10
m
s
ID (A)
10
0m
s 1 4 8 11
100 1
Coss
0.5
50 2 5 9 12
Crss
0.1
20 0.05
0 10 20 30 40 50 3 5 10 50 100 500
VDS (V) VDS (V)
122
MOS FET Array STA508A
VDSS 120 V min typ max 25.25
±0.2
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 120 V

ID ±6 A IGSS VGS = ±20V ±5 µA b
±0.2
±0.2
±0.2
9.0
±10 µA a
11.3
ID (pulse)*1 VDS = 120V, VGS = 0V 100
2.3
A IDSS
4 (Ta = 25ºC) W VTH VDS = 10V, ID = 250µA 1.0 2.0 V
±0.5
PT
3.5
20 (Tc = 25ºC) W Re (yfs) VDS = 10V, ID = 4.0A 5.0 S
(2.54)
Ω
±0.25 ±0.15
EAS *2 80 mJ VGS = 10V, ID = 4.0A 0.15 0.2 1.0 0.5
±0.3 ±0.3
RDS (ON) 0 0
Tch 150 ºC VGS = 4V, ID = 4.0A 0.2 0.25 Ω 9 •2.54=22.86
±0.05
±0.15
±0.2
±0.2
*1 PW 100µs, duty 1% Coss f = 1.0MHz 130 pF C1.5
±0.5
4.0
1.2
0.5
*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Crss VGS = 0V 30 pF
t d (on) ID = 4A 100 ns 1 2 3 4 5 6 7 8 9 10
tr VDD 12V 300 ns

S G D G D G D G D S
RL = 3Ω
t d (off) VGS = 5V 250 ns a) Part No.
tf RG = 50Ω 200 ns b) Lot No.
ISD = 6A, VGS = 0V 1.0 1.5 V (Unit: mm)

VSD

16 10 0.30
VGS = 10V
VDS = 10V
0.25
8
12 VGS = 4.5V VGS = 4V
0.20
RDS (ON) (Ω)

6
ID (A)
ID (A)
8 0.15
Ta = –55ºC VGS = 10V
4 25ºC
75ºC 0.10
4 150ºC
2
0.05
0 0 0
0 1 2 3 4 5 6 0 1.0 2.0 3.0 4.0 0 2 4 6 8 10

0.45 50 6
ID = 4A VGS = 0V
0.40 VGS = 4V
5
10
Ta = 150ºC
0.30 4
75ºC
RDS (ON) (Ω)
5
Re (yfs) (S)
IDR (A)
25ºC
3 –55ºC
0.20 VGS = 10V
Ta = –55ºC
1
25ºC 2
0.5 75ºC
0.10
150ºC 1
0 0.1 0
–50 0 50 100 150 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
(Ta = 25ºC)
1000 20
ID (pulse) max
500 10 10
Ciss 0µ
ID (DC) max s
5 1m
Capacitance (pF)
10 s
VGS = 0V RDS (on) LIMITED m
s 3 5 7 9
f = 1MHz 10
ID (A)
0m
100 s
Coss 1 2 4 6 8
50
0.5 1 10
Crss
10 0.1
0 10 20 30 40 50 1 5 10 50 100 200
VDS (V) VDS (V)
123
MOS FET Array STA509A
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA
VDSS 52±5 V min typ max 25.25
±0.2
VGSS ±20 V V(BR) DSS ID = 1mA, VGS = 0V 47 52 57 V

ID ±3 A IGSS VGS = ±20V ±1.0 µA b
±0.2
±0.2
±0.2
9.0
±6 µA a
11.3
VDS = 40V, VGS = 0V
2.3
ID (pulse) *1 A IDSS 100
4 (Ta = 25ºC) W VTH VDS = 10V, ID = 250µA 1.0 2.5 V
±0.5
PT
3.5
20 (Tc = 25ºC) W Re (yfs) VDS = 10V, ID = 1.0A 1.0 S
(2.54)
Ω
±0.25 ±0.15
EAS *2 40 mJ VGS = 10V, ID = 1.0A 0.2 0.25 1.0 0.5
0
±0.3 ±0.3
RDS (ON) 0
Tch 150 ºC VGS = 4V, ID = 1.0A 0.25 0.3 Ω 9 •2.54=22.86
±0.05
±0.15
±0.2
±0.2
*1 PW 100µs, duty 1% Coss f = 1.0MHz 120 pF C1.5
±0.5
4.0
1.2
0.5
*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω Crss VGS = 0V 20 pF
t d (on) ID = 1A 2.0 µs 1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S
tr VDD 12V 7.4 µs
RL = 12Ω
t d (off) VGS = 5V 3.3 µs a) Part No.
tf RG1 = 50Ω, RG2 = 10Ω 4.2 µs b) Lot No.
(Unit: mm)
VSD ISD = 6A, VGS = 0V 1.0 1.5 V

6 20 0.8
VGS = 4V
10 VDS = 10V VGS = 4V
5 Ta = 150ºC
VGS = 5V
0.6
VGS = 10V
4
RDS (ON) (Ω)

1 75ºC
ID (A)
ID (A)
25ºC
3 0.4
2 –55ºC
0.1 Ta = –55ºC
VGS = 3V 0.2
25ºC
1
75ºC
150ºC
0 0.01 0
0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 0 1 2 3 4 5 6

0.5 10 10
ID = 1A VDS = 10V
VGS = 4V 5
0.4 8
typ.
RDS (ON) (Ω)
Re (yfs) (S)
0.3 6 Ta = 150ºC
IDR (A)
75ºC
VGS = 10V 25ºC
0.2 1 Ta = –55ºC 4
typ. –55ºC
25ºC
0.5 150ºC
0.1 2
0 0.2 0
–50 0 50 100 150 0.05 0.1 0.5 1 6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
■ Safe Operating Area (single pulse) Equivalent Circuit Diagram

(Tc = 25ºC)
10
ID (pulse) max 10
0µ
5 s
ED 1m
IT
LI
M s
n)
(o
S
D
10
R
m
3 5 7 9
s
ID (A)
1
2 4 6 8
0.5
1 10
0.1
0.5 1 5 10 50
VDS (V)
124
Thyristor with built-in reverse diode for HID lamp ignition TFC561D

● Repetitive peak off-state voltage: VDRM=600V 4.44±0.2
(1.4)
10.2±0.3 1.3±0.2
● Repetitive peak surge on-state current: ITRM=430A
● Critical rate-of-rise of on-state current: di/dt=1200A/µs
● Gate trigger current: I GT=20mA max
10.0 –0.5
+0.3
11.3±0.5
8.6±0.3
● With built-in reverse diode
1.2±0.2 2.59±0.2
1.27±0.2
±0.5
+0.2
0.86 –0.1
11.0
Absolute Maximum Ratings 0.76±0.1

2.54±0.5 2.54±0.5 0.4±0.1
Tj=–40 to +125°C,
Repetitive peak off-state voltage VDRM 600 V
RGK=1kΩ (1). Cathode (K)
(2). Anode (A)
Repetitive surge peak
ITRM 430 A
VD 430V, 100kcycle, * (1) (2) (3)
(3). Gate (G)
on-state current Wp=1.3µs, Ta=125°C
Weight: Approx. 1.5g
Critical rate-of-rise of on-state current di/dt 1200 A/µs *
Peak forward gate current IFGM 2.0 A f 50Hz, duty 10%
Peak gate power loss PGM 5.0 W f 50Hz, duty 10%
Average gate power loss PG (AV) 0.5 W
Peak reverse gate voltage VRGM 5 V f 50Hz Measurement circuit

VD 430V, 100kcycle, * L
Diode repetitive peak surge
I FRM 240 A
forward current Wp=1.3µs, Ta=125°C

Sample
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to VD G1 C
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
G2
Electrical Characteristics (Tj=25ºC)

Ratings
min typ max
On-state voltage VTM 1.4 V IT=10A
Gate trigger voltage VGT 1.5 V VD=6V, RL=10Ω Current waveform (1cycle)
Gate trigger current IGT 20 mA VD=6V, RL=10Ω (Ta=25ºC)
Gate non-trigger voltage VGD 0.1 V VD=480V, Tj=125ºC
Holding current IH 2 10.0 mA RG–K=1kΩ, Tj=25ºC
Off-state current (1) IDRM (1) 100 µA VD=VDRM, RG–K=1kΩ, Tj=25ºC

100A/div
Off-state current (2) IDRM (2) 1 mA VD=VDRM, RG–K=1kΩ, Tj=125ºC
Thermal resistance Rth 4.0 ºC/W Junction to case
Diode forward voltage VF 1.4 V IF=10A
2µs/div
125
Thyristor with built-in reverse diode for HID lamp ignition TFC562D

4.44±0.2
● Repetitive peak off-state voltage: VDRM=600V (5) 1.3±0.2
(1.4)
● Repetitive peak surge on-state current: ITRM=600A
● Critical rate-of-rise of on-state current: di/dt=1600A/µs
● Gate trigger current: I GT=20mA max
(0.45)
a
+0.3
10.5 – 0.5
● With built-in reverse diode
9.1±0.3
b
2.6±0.2
(Root dimension)
(2.69) (1.8)
+0.2
Absolute Maximum Ratings 1.34 –0.1

0.86–0.1
+0.2
11.0±0.5
Tj = –40 to +125°C,
Repetitive peak off-state voltage VDRM 600 V 0.76±0.1
RGK = 1kΩ
Repetitive surge peak Ta = 100°C, VD 430V, 2.54±0.1 2.54±0.1 0.4±0.1
ITRM 600 A WP = 1.05µs, IG = 70mA,
on-state current (Root dimension) (Root dimension)
dig/dt = 0.5A/µs,
Critical rate-of-rise of on-state current di/dt 1600 A/µs 100kcycle*,
See the examples of current waveforms 10.2±0.3
Peak forward gate current IFGM 2 A f 50Hz, duty 10%
Peak gate power loss PGM 5 W f 50Hz, duty 10%
Average gate power loss PG (AV) 0.5 W 1 2 3
Peak reverse gate voltage VRGM 5 V f 50Hz

Ta = 100°C, VD 430V,
Diode repetitive peak surge WP = 1.05µs,
I FRM 460 A 100kcycle*,
forward current
See the examples of current waveforms
Storage temperature Tstg –40 to +125 ºC Current waveform (1cycle)

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to (Ta=100ºC)
cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
Electrical Characteristics (Tj=25ºC)

V: 200A/div
Ratings
min typ max
On-state voltage VTM 1.4 V IT = 10A
Gate trigger voltage VGT 1.5 V VD = 6V, RL = 10Ω
Gate trigger current IGT (1) 20 mA VD = 6V, RL = 10Ω
Gate non-trigger voltage VGD 0.1 V VD = 480V, Tj = 125°C
Holding current IH 2 5 mA RG–K = 1kΩ, Tj = 25°C
Off-state current (1) IDRM (1) 10 µA VD = VDRM, RG–K = 1kΩ, Tj = 25°C H: 2µs/div
Off-state current (2) IDRM (2) 1 mA VD = VDRM, RG–K = 1kΩ, Tj = 125°C * A single cycle operation consists of a continuous impression of 50
rounds with period T = 10ms followed by a rest time for the junction
Thermal resistance Rth 4.0 °C/W Junction to case, With infinite heatsink temperature of the element to cool down to 100°C (= Ta). Repeat
this cycle operation.
Diode forward voltage VF 1.4 V IF = 10A
126
Rectifier Diodes for Alternators
■ Normal Type
Absolute maximum ratings Electrical Characteristics
Tj Tstg VF IR Fig.
Part No. VRM IF (AV) IFSM VZ
(V) Condition (mA) Condition No.
(V) (A) (A) (ºC) max IF (A) max (V) IZ (mA)
SG-9CNS
200 20 200 –40 to +150 1.10 20 0.25 — — 1
SG-9CNR
SG-9LCNS
200 30 300 –40 to +150 1.10 30 0.25 — —
SG-9LCNR
2
SG-9LLCNS
200 35 350 –40 to +150 1.10 35 0.25 — —
SG-9LLCNR
SG-10LS
200 30 300 –40 to +150 1.2 100 0.25 — —
SG-10LR
SG-10LXS
150 35 350 –40 to +150 1.05 100 0.25 — —
SG-10LXR
3
SG-10LLS
200 40 400 –40 to +150 1.05 100 0.25 — —
SG-10LLR
SG-10LLXS
150 45 450 –40 to +150 1.0 100 0.25 — —
SG-10LLXR
■ Zener Type
Absolute maximum ratings Electrical Characteristics
Tj Tstg VF IR Fig.
Part No. VRM IF (AV) IFSM VZ
(V) Condition (mA) Condition No.
(V) (A) (A) (ºC) max IF (A) max (V) IZ (mA)
SG-9CZS
17 20 200 –40 to +200 1.10 20 0.05 23±3 10 1
SG-9CZR
SG-9LLCZS
17 35 350 –40 to +200 1.10 35 0.05 23±3 10 2
SG-9LLCZR
SG-10LZ23S
17 30 300 –40 to +150 1.2 100 0.05 23±3 10
SG-10LZ23R
3
SG-10LLZ23S
17 40 400 –40 to +150 1.05 100 0.05 23±3 10
SG-10LLZ23R
SG-14LXZS
16 35 350 –40 to +200 1.15 100 0.05 22±3 100 4
SG-14LXZR

Fig. 1 Fig. 2
R: 23.0±1.0
S: 19.0±1.0
R: 23.0±1.0
S: 19.0±1.0
1.5 1.5
3.1±0.1 3.1±0.1
(R0.5)
1
Polarity
5±0.4
5±0.4
Polarity
1.2
1.2
7.0±0.2 8.4±0.2
8.4±0.2 S type R type 9.5±0.2 S type R type
12.84
5.0 11.5
Fig. 3 2 Fig. 4 1.26
10.0
10.7
13.5
2.0
(4°)
(1.5)
24.0
R : 28.5
S : 20.5
(2)
2.5
R1.2
0.4
1.4 1.0 Polarity Polarity
(5.8)
(45 (30
°)
3.6
°)
10max
8max
3.0 0.6 4.4

4.2
4.7
4.0
5.0 R type S type S type R type

0.3
9.0
127
High-voltage Diodes for Igniters
Absolute Maximum Ratings Electrical Characteristics (Ta=25ºC)

IF (AV) IRSM IRSM
VRM (mA) (mA) (A) Tj Tstg VF IR Vz Fig.
Part No. (kV) 50 Hz Peak value of Peak value (V) (µA) (kV)
single shot
half-wave triangular of 50 Hz Condition No.
wave max VR =VRM IR =100µA
signal with 100µs half-wave IF (mA) max
half-power (ºC)
average bandwidth
signal
SHV-01JN 0.5 30 30 3 1 0.55 to 1.0 2
SHV-05J 2.5 30 30 3 –40 to +150 5 10 10 2.6 to 5.0 1
SHV-06JN 3.0 30 10 3 6 3.2 to 6.0 2
Fig. 1 (SHV-05J) Fig. 2 (SHV-06JN)

±0.2
2.5 2.5±0.2
0.5
0.5
C0.5
C0.5
27min 27min 27min 6.5 27min
5±0.2
128
Power Zener Diode
(Ta=25ºC)
Absolute Maximum Ratings Electrical Characteristics

VZ (V) IR Fig.
Part No. P PR VDC I ZSM Tj Tstg VR =VDC No. Remarks
1mA Condition
(W) (W) (V) (A) instantaneous (µA)
(ºC) current IZ (mA) max
SFPZ-68 1 50 20 2 –40 to +150 25.0 to 31.0 1 10 1
SJPZ-K28 * 1 (5ms) 20 2 –55 to +150 25.0 to 31.0 1 10 2
SJPZ-E18 * 1 13 — –55 to +150 16.8 to 19.1 1 10 2
Surface-mount
SJPZ-E27 * 1 85 20 — –55 to +150 25.1 to 28.9 1 10 2 type
SJPZ-E33 * 1 (500µs) 25 — –55 to +150 31.0 to 35.0 1 10 2
SJPZ-E36 * 1 27 — –55 to +150 34.0 to 38.0 1 10 2
1500
PZ628 5 20 65*1 –40 to +150 25.0 to 31.0 10 50 3 Axial type
(5ms) * 1: IZSM conditions
SZ-10N27 5 — 22 70*1 –55 to +175 24 to 30 10 10 4 IRSM
SZ-10N40 * 5 — 22 40*1 –55 to +175 36 to 40 10 10 4 IRSM

Surface-mount 2
SZ-10NN27 6 — 22 90*1 –55 to +175 24 to 30 10 10 4 type
SZ-10NN40 * 6 — 22 55*1 –55 to +175 36 to 40 10 10 4
0 10ms Time
* under development
Fig. 1 4.5 ±0.2 Fig. 2 4.5±0.2

2.6 ±0.2
2.6±0.2
2.05 ±0.2
0.05
0.05–0.05
2.15±0.2
+0.1
1.35 ±0.4 2.0min 1.35 ±0.4 1.1±0.2

1.3±0.4 1.3±0.4 1.5±0.2
+0.4
+0.4
5.1 –0.1
1.5±0.2 5.0 –0.1
Fig. 3 Fig. 3
1.3 ±0.05
C2
8.5±0.5
Cathode marking 5±0.3
10±0.3
2±0.3
10.0 ±0.02
56.0 ±0.7
(9.75)
10±0.3
13.5±0.3
10.0 ±0.2
15.5±0.5
2.0±0.5
2.7±0.3
7.2±0.5 3±0.5
129
General-purpose Diodes
Rectifier Diodes
■ Surface-mount
I FSM IR I R (H)
VRM I F (AV) (A) Tj Tstg VF (µA) (mA) Rth (j-l) Weight
Part No. Peak value Package
(V) (A) of 50 Hz (ºC) (ºC) (V) Condition VR=VRM VR=VRM Condition (°C/W) (g)
half-wave max I F (A) Ta (°C)
signal max max
SFPM-52 0.9 30 1.0 1.0 10 50 100 20 1 0.072
200
SFPM-62 1.0 45 0.98 1.0 10 50 100 20 1 0.072
–40 to +150
SFPM-54 0.9 30 1.0 1.0 10 50 100 20 1 0.072
400
SFPM-64 1.0 45 0.98 1.0 10 50 100 20 1 0.072
Ultra Fast Recovery Rectifier Diodes

■ Surface-mount
I FSM IR I R (H)
VRM I F (AV) (A) Tj Tstg VF (µA) (mA) t rr t rr Rth (j-l) Weight
(V) (A) of 50 Hz (ºC) (ºC) (V) Condition VR=VRM VR=VRM Condition (ns) Condition (ns) Condition (°C/W) (g)
half-wave max I F (A) Ta (°C) I F/IRP (mA) I F/IRP (mA)
signal max max
SFPL-52 0.9 25 0.98 1.0 10 1 150 (Tj) 50 100/100 35 100/200 20 1 0.072
SFPL-62 1.0 25 0.98 2.0 10 1 150 (Tj) 50 100/100 35 100/200 20 1 0.072
200
MPL-102S 10.0 65 –40 to +150 0.98 5.0 100 0.2 150 40 100/100 30 100/200 2.5 2 1.4
MP2-202S 20.0 110 0.98 10.0 200 0.4 150 50 100/100 35 100/200 2.5 2 1.4
SFPL-64 400 1.0 25 1.3 1.0 10 0.05 150 50 100/100 30 100/200 20 1 0.072
Schottky Barrier Diodes

■ Surface-mount
I FSM IR I R (H)
VRM I F (AV) (A) Tj Tstg VF (µA) (mA) Rth (j-l) Weight
(V) (A) of 50 Hz (ºC) (ºC) (V) Condition VR=VRM VR=VRM Condition (°C/W) (g)
half-wave max I F (A) Ta (°C)
signal max max
SFPJ-53 * 30 1.0 30 0.45 1.0 1.0 35 150 20 1 0.072
SFPJ-63 30 2.0 40 0.45 2.0 2.0 70 150 20 1 0.072
SFPJ-73 30 3.0 50 0.45 3.0 3.0 100 150 20 1 0.072
SFPB-54 40 1.0 30 0.55 1.0 1 35 150 20 1 0.072
SFPB-64 40 2.0 60 0.55 2.0 5 70 150 20 1 0.072
SFPE-64 40 2.0 40 0.6 2.0 0.2 70 150 20 1 0.072
SFPB-74 40 3.0 60 –40 to +150 0.5 2.0 5 100 150 20 1 0.072
SFPB-56 60 0.7 10 0.62 0.7 1 30 150 20 1 0.072
SFPW-56 60 1.5 25 0.7 1.5 1 70 150 20 1 0.072
SFPB-66 60 2.0 25 0.69 2.0 1 55 150 20 1 0.072
SFPB-76 60 2.0 40 0.62 2.0 2 70 150 20 1 0.072
SFPB-59 90 0.7 10 0.81 0.7 1 30 150 20 1 0.072
SFPB-69 90 1.5 40 0.81 1.5 2 55 150 20 1 0.072
* under development

1: (Surface-mount SFP) 2: (TO-220S)
±0.2
4.5 6.5 ±0.4 2.3±0.4 5.4
0.16
0.55 ±0.1 4.1

5.4 ±0.4
1.7 ±0.5
1.37
2.9
2.6 ±0.2
5.0
a
0.7
5.5 ±0.4
b
1.2max
c 4.9
2.05 ±0.2
0.05
2.5 ±0.4
0 to 0.25
1.15 ±0.1 a) Part No.

0.8±0.1 0.8 ±0.1
0.5 ±0.2
b) Polarity
1.35 ±0.4 2.0min 1.35 ±0.4 1.1 ±0.2 2.29 ±0.5 2.29 ±0.5 c) Lot No.
0.55 ±0.1
+0.4
5.1 –0.1 1.5 ±0.2 (Common with heatsink)
1.5 max
N.C Cathode Anode
130
General-purpose Diodes - Taping Specifications
Taping Specifications
Taping Packaging
Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Quantity
Emboss taping Reel
1.75 ±0.1
±0.2 ±0.1 +0.1
4.5 4.0 1.5 –0 Marking of Part No.,
Lot No., quantity, etc.
2.6 ±0.2
5.5 ±0.05
2.0 ±0.5
0.05 –0.05
12.0 ±0.3
+ 0.1
V
2.05 ±0.2
13 ±0.5
5.5
1,800 pcs.
65
1.35 ±0.4 2.0min 1.35 ±0.4 1.1 ±0.2 per reel
+0.4
5.1 – 0.1 1.5 ±0.2 21±0.8
Pull out direction 4.0 ±0.1 2.0 R1.0
2.6
A suffix "V" is (1) The right side of the tape is the cathode viewing in the unfold direction. 3.1 178 ±2 14±1.5 2.0 ±0.5
added to Part (2) The product is inserted into the case with the installed electrode on the lower side.
No. for tape (3) A leader tape 150 to 200mm long is provided on the unfolding edge.
(4) A space of at least 10 pitches equivalent is provided on either end of the tape.
packaging. (5) Taping with reversed diode polarity is available on request (taping name VL).
Power Surface-mount - Taping Specifications
Taping Packaging
Part No.
Materials
Pull out direction Quantity Disc: both-face white
corrugated cardboard
VL
Taping name Lot No.
(type) Core: foamed styrol
3,000 pcs.
A suffix "VL" is
35° 1 3 8 1 3 8
per reel
1.75 ±0.1
added to Part +0.1 2±0.1

1.5 0
4±0.1 12±0.1 (Seal part) 4.9±0.1
No. for tape
10
packaging.
11.5±0.1
(Bottom dimensions)
10 B
(Cover tape)
24±0.3
21.5±0.1
14.4±0.1
22
100±1
330±2
13±0.2
80
60
40
20
120°
25.5±1
29.5±1
0.4±0.1
10.8±0.1 (Seal part)
2.5
Pull out direction

R135
(Bottom dimensions) 5.4max

±0.1
VR 9±0.5
3,000 pcs.
per reel
7 ±0.5
2±0.5
21±0.8
A suffix "VR" is
added to Part
5
±0
.5
No. for tape

13
±0
.2
packaging. 13±0.5
High-voltage diodes for ignition - Taping Specifications
Taping Packaging
Axial taping
5±0.5
Part No.
1.2 max
V1 Lot No.
Quantity 5,000 pcs.
29 ±1.5 per reel
75 ±1.5
A suffix "V1" is
±1
1.0 max
25
added to Part
No. for tape
6 ±1.0 58 ±1 6 ±1.0 340±2
packaging.
131
General-purpose Diodes - Taping Specifications
Power Zener Surface-mount - Taping Specifications
Taping Packaging
Pull out direction
VL 750 pcs.
A suffix "VL" is
35° 1 3 B 1 3 B
per reel
1.75±0.1
added to Part 1.50±0.1 4.00±0.1
2.00±0.1 5.64±0.1
No. for tape
10
packaging.
4°
11.50±0.1
10 B
+0.3
24.00–0.1
16.00±0.1
22
100±1
330±2
13±0.2
80
60
40
20
120°
25.5±1
29.5±1
4°
Pull out direction 1.50±0.25
R135
R TYPE L TYPE 16.00±0.1
0.40±0.05
VR 8°
10.80±0.1
8° 9±0.5
750 pcs.
per reel
7 ±0.5
2±0.5
21±0.8
A suffix "VR" is
added to Part The label showing the
5
±0.
product name, quantity
5
No. for tape
13
±0
and production lot is
.2
packaging. 13±0.5
attached to the reel.
132
3 LEDs
3-1. Uni-Color LED Lamps .............. 134
3-2. Bi-Color LED Lamps .................. 137
3-3. Surface Mount LEDs .................. 138
3-4. Infrared LEDs ..................................... 140
3-5. Ultraviolet LEDs ............................... 141
3-6. Multi-chip Modules ..................... 142
133
General-purpose LEDs
Uni-Color LED Lamps

Ratings
Parameter Unit Conditions
GaP GaAsP GaA As A GaInP InGaN GaN
PD mW 75 120
IF mA 30
∆I F mA /ºC – 0.45 Above 25ºC
I FP mA 100 70 f=1kHz, tw=100µs
VR V 3 5
Top ºC –30 to +85 –30 to +80
Tstg ºC –30 to +100
Electro-optical characteristics (Ta=25ºC)
Fig. No.
Contact
mount
Outline Emitting color Part No. Lens color VF IV Peak wavelength Dominant wavelength
(V) (mcd) Condition λp (nm) λp (nm) Chip
IF (mA) material
typ max typ typ typ
SEL1110R Diffused red 2.8
Deep red SEL1110W Diffused white 2.0 2.5 2.8 5 700 625 GaP
SEL1110S Tinted red 4.5
SEL1610W Diffused white 250
High-intensity red 1.75 2.2 20 660 642 GaA As
SEL1610C Clear 300
SEL1210R Diffused red 26
Red 1.9 2.5 20 630 620 GaAsP
SEL1210S Tinted red 75
SEL1810D Diffused orange 18
Amber 1.9 2.5 10 610 605 GaAsP 1
SEL1810A Tinted orange 37
Orange 1.9 2.5 10 587 590 GaAsP
SEL1710Y Diffused yellow 22
Yellow 2.0 2.5 10 570 571 GaP
SEL1710K Tinted yellow 65
SEL1410G Diffused green 32
Green 2.0 2.5 20 560 567 GaP
SEL1410E Tinted green 84
Pure green SEL1510C Clear 2.0 2.5 50 20 555 559 GaP
SEL1210RM Diffused red 36
Red 1.9 2.5 20 630 620 GaAsP
SEL1210SM Tinted red 75
SEL1810DM Diffused orange 18
Amber 1.9 2.5 10 610 605 GaAsP
SEL1810AM Tinted orange 37
Orange 1.9 2.5 10 587 590 GaAsP 2
5 Round SEL1910AM Tinted orange 34
Yellow SEL1710KM Tinted yellow 2.0 2.5 65 10 570 571 GaP
SEL1410GM Diffused green 30
Green 2.0 2.5 20 560 567 GaP
SEL1410EM Tinted green 84
Pure green SEL1510CM Clear 2.0 2.5 50 20 555 559 GaP
Ultra high-intensity red SELU1210CXM Clear 2.0 2.5 280 20 635 625 A GaInP
Ultra high-intensity orange SELU1910CXM-S Clear 2.0 2.5 450 20 591 589 A GaInP
Ultra high-intensity pure green SELU1D10CXM Clear 3.3 4.0 2000 20 525 530 InGaN 3
Ultra high-intensity blue SELU1E10CXM Clear 3.3 4.0 600 20 468 470 InGaN
Ultra high-intensity blue SELS1E10CXM-M Clear 3.7 4.2 1000 20 468 470 InGaN
Ultra high-intensity red SELU1250CM Clear 2.0 2.5 900 20 635 625 A GaInP
SEL1250SM Tinted red 75
Red 1.9 2.5 20 630 620 GaAsP
SEL1250RM Diffused red 48
SEL1850AM Tinted orange 90
Amber 1.9 2.5 20 610 605 GaAsP
Orange SEL1950KM Tinted orange 1.9 2.5 96 20 587 590 GaAsP 4
SEL1450EKM Tinted green 190
Green 2.0 2.5 20 560 567 GaP
SEL1450GM-YG Diffused green 120
Pure green SEL1550CM Clear 2.0 2.5 72 20 555 559 GaP
Ultra high-intensity pure green SELU1D50CM Clear 3.3 4.0 6000 20 525 530 InGaN
Ultra high-intensity blue SELU1E50CM Clear 3.3 4.0 1850 20 468 470 InGaN
High-intensity red SEL1615C Clear 1.75 2.2 170 20 660 642 GaA As 5
4.6✕5.6 Ultra high-intensity red SELU1253CMKT Clear 2.0 2.5 200 20 635 625 A GaInP
6
Egg-shaped Green SEL1453CEMKT Tinted green 2.0 2.5 140 20 560 567 GaP
Deep red 2.0 2.5 5 700 625 GaP
Red 1.9 2.5 20 630 620 GaAsP
4 Round Amber 1.9 2.5 10 610 605 GaAsP 7
Orange 1.9 2.5 10 587 590 GaAsP
Yellow 2.0 2.5 10 570 571 GaP
134
Uni-Color LED Lamps
Fig. No.
Contact
mount
Outline Emitting color Part No. Lens color VF (V) IV Peak wavelength Dominant wavelength
(mcd) Condition λp (nm) λp (nm) Chip
material
typ max typ IF (mA) typ typ
Green 2.0 2.5 20 560 567 GaP
7
Ultra high-intensity green SELU4410CKT-S Clear 2.1 2.5 170 20 560 562 A GaInP
Deep red 2.0 2.5 10 700 625 GaP
Red 1.9 2.5 20 630 620 GaAsP
4 Round SEL4814A Tinted orange 20
Amber 1.9 2.5 10 610 605 GaAsP
SEL4914A Tinted orange 26 8
Orange 1.9 2.5 10 587 590 GaAsP
Yellow 2.0 2.5 10 570 571 GaP
Green 2.0 2.5 20 560 567 GaP
Deep red 2.0 2.5 10 700 625 GaP
Red 1.9 2.5 20 630 620 GaAsP
Amber 1.9 2.5 10 610 605 GaAsP
SEL6810D Diffused orange 9.6
Ultra high-intensity orange SELU6910C-S Clear 2.0 2.5 550 20 591 589 A GaInP
Orange 1.9 2.5 10 587 590 GaAsP 9
Yellow 2.0 2.5 10 570 571 GaP
Green 2.0 2.5 20 560 567 GaP
SEL6510C Clear 42
Pure green 2.0 2.5 20 555 559 GaP
SEL6510G Diffused green 9.6
Blue SEL6E10C Clear 4.0 4.8 60 20 430 466 GaN
Ultra high-intensity SELU6614C-S Clear 150
2.0 2.5 20 650 639 A GaInP
deep red SELU6614W-S Diffused white 90
Ultra high-intensity red SELU6214C Clear 2.0 2.5 180 20 635 625 A GaInP
Red SEL6214S Tinted red 1.9 2.5 18 20 630 620 GaAsP
Amber SEL6814A Tinted orange 1.9 2.5 9.0 10 610 605 GaAsP
Ultra high-intensity light amber SELS6B14C Clear 2. 2.5 120 20 600 596 A GaInP
Ultra high-intensity orange SELU6914C-S Clear 2.0 2.5 180 20 591 589 A GaInP
SEL6914A Tinted orange 8.0
Orange 1.9 2.5 10 587 590 GaAsP
SEL6914W Diffused white 5.0
3 Round 10
Ultra high-intensity yellow SELU6714C Clear 2.1 2.5 60 20 572 571 A GaInP
Yellow 2.0 2.5 20 570 571 GaP
Green SEL6414E Tinted green 2.0 2.5 42 20 560 567 GaP
Ultra high-intensity green SELU6414G-S Diffused green 2.1 2.5 30 20 560 562 A GaInP
Deep green SEL6414E-TG Tinted green 2.0 2.5 18 20 558 564 GaP
Ultra high-intensity pure green SELS6D14C Clear 3.3 4.0 300 20 518 525 InGaN
Ultra high-intensity blue SELS6E14C-M Clear 3.7 4.2 70 20 468 470 InGaN
Orange SEL6915A Tinted orange 1.9 2.5 60 20 587 590 GaAsP
Yellow SEL6715C Clear 2.0 2.5 90 20 570 571 GaP 11
Deep red SEL2110R Diffused red 2.0 2.5 1.8 10 700 625 GaP
SEL2110W Diffused white 1.8
High-intensity red SEL2610C Clear 1.75 2.2 60 20 660 642 GaA As
Ultra high-intensity deep red SELU2610C-S Clear 2.0 2.5 300 20 650 639 A GaInP
SEL2210S Tinted red 40 12
Red SEL2210R Diffused red 1.9 2.5 15 20 630 620 GaAsP
Amber 1.9 2.5 10 610 605 GaAsP
Ultra high-intensity light amber SELU2B10A-S Tinted orange 2.0 2.5 300 20 598 595 A GaInP
135
Uni-Color LED Lamps
Fig. No.
Contact
mount
Outline Emitting color Part No. Lens color VF (V) IV Peak wavelength Dominant wavelength
(mcd) Condition λp (nm) λp (nm) Chip
material
Orange 1.9 2.5 10 587 590 GaAsP
Yellow 2.0 2.5 10 570 571 GaP
Green 2.0 2.5 20 560 567 GaP 12
SEL2510C Clear 43
Pure green 2.0 2.5 20 555 559 GaP
SEL2510G Diffused green 8.2
Ultra high-intensity pure green SELU2D10C Clear 3.3 4.0 1200 20 525 530 InGaN
Ultra high-intensity blue SELU2E10C Clear 3.3 4.0 400 20 468 470 InGaN
3 Round
Ultra high-intensity red SELU2215R-S Diffused red 2.0 2.5 380 20 632 624 A GaInP
Red 1.9 2.5 20 630 620 GaAsP
Amber 1.9 2.5 10 610 605 GaAsP
Orange 1.9 2.5 10 587 590 GaAsP 13
Yellow 2.0 2.5 10 570 571 GaP
Green 2.0 2.5 20 560 567 GaP
Red SEL1213C Tinted red 1.9 2.5 7.0 20 630 620 GaAsP
Orange SEL1913K Tinted light orange 1.9 2.5 8.0 20 587 590 GaAsP
14
Yellow SEL1713K Tinted yellow 2.0 2.5 15 20 570 571 GaP
Pure green SEL1513E Tinted light green 2.0 2.5 5.0 20 555 559 GaP
Ultra high-intensity red SELU6213C-S Clear 2.0 2.5 30 20 632 624 A GaInP
Ultra high-intensity light amber SELS6B13W Diffused white 2.0 2.5 60 20 600 596 A GaInP
Inverted-cone Green SEL6413E Tinted green 2.0 2.5 14 20 560 567 GaP 15
typ for surface Deep green SEL6413E-TG Tinted green 2.0 2.5 6 20 558 564 GaP
illumination Pure green SEL6513C Clear 2.0 2.5 5.0 20 555 559 GaP
High-intensity red SEL2613CS-S Tinted light red 1.75 2.2 20 20 660 642 GaA As
Red SEL2213C Tinted red 1.9 2.5 7.0 20 630 620 GaAsP
Orange SEL2913K Tinted orange 1.9 2.5 8.0 20 587 590 GaAsP
16
Yellow SEL2713K Tinted yellow 2.0 2.5 17 20 570 571 GaP
Green 2.0 2.5 20 560 567 GaP
Pure green SEL2513E Tinted green 2.0 2.5 5.0 20 555 559 GaP
High-intensity red SEL5620C Clear 1.75 2.2 100 20 660 642 GaA As
Ultra high-intensity deep red SELU5620S-S Tinted red 2.0 2.5 100 20 650 639 A GaInP
Ultra high-intensity red SELU5220C-S Clear 2.0 2.5 120 20 632 624 A GaInP
Ultra high-intensity amber SELU5820C-S Clear 2.0 2.5 150 20 611 605 A GaInP
5mm Pitch lead Amber SEL5820A Tinted orange 1.9 2.5 12 20 610 605 GaAsP
17
rectangular Ultra high-intensity light amber SELU5B20C Clear 2.0 2.5 120 20 600 596 A GaInP
Orange SEL5920A Tinted orange 1.9 2.5 12 20 587 590 GaAsP
Pure green SEL5520C Clear 2.0 2.5 6.0 20 555 559 GaP
Ultra high-intensity red SELS5223C Clear 2.0 2.5 100 20 635 625 A GaInP
Amber SEL5823A Tinted orange 1.9 2.5 35 20 610 605 GaAsP
Ultra high-intensity light amber SELS5B23C Clear 2.0 2.5 135 20 600 596 A GaInP
Ultra high-intensity orange SELS5923C Clear 2.0 2.5 145 20 591 589 A GaInP
5mm Pitch lead Orange SEL5923A Tinted orange 1.9 2.5 35 20 587 590 GaAsP
18
bow-shaped Ultra high-intensity yellow SELU5723C Clear 2.1 2.5 155 20 572 571 A GaInP
Yellow SEL5723C Clear 2.0 2.5 60 20 570 571 GaP
Ultra high-intensity blue SELU5E23C Clear 3.3 4.0 180 20 468 470 InGaN
136
Bi-Color LED Lamps

Ratings
GaP GaAsP GaA As A GaInP InGaN
PD mW 75 120 Also applies to simultaneous lighting
IF mA 30
∆I F mA /ºC –0.45 Above 25ºC
I FP mA 100 f=1kHz, tw=100µs
VR V 3 5
Top ºC –30 to +85
Fig. No.
Contact
mount
IV Peak wavelength Dominant wavelength
Outline Part No. Emitting color Lens color VF (V) (mcd) λp (nm) λp (nm) Chip Common
Condition material
Deep red 2.0 2.5 15 20 700 625 GaP
SML11516C Clear Cathode
Pure green 2.0 2.5 50 20 555 559 GaP
Deep red 2.0 2.5 6.0 20 700 625 GaP
SML1516W Diffused white Cathode
Pure green 2.0 2.5 20 20 555 559 GaP
Red 1.9 2.5 65 20 630 620 GaAsP
Green 2.0 2.5 90 20 560 567 GaP
Red 1.9 2.5 60 20 630 620 GaAsP
Green 2.0 2.5 60 20 560 567 GaP
Amber 1.9 2.5 50 20 610 605 GaAsP
Green 2.0 2.5 60 20 560 567 GaP
Orange 1.9 2.5 45 20 587 590 GaAsP
5 Round SML19416W Diffused white Cathode 19
Green 2.0 2.5 60 20 560 567 GaP
Ultra high-intensity red 2.0 2.5 500 20 632 624 A GaInP
SMLU12E16C Clear Cathode
Ultra high-intensity blue 3.3 4.0 400 20 468 470 InGaN
SMLU12E16W Diffused white Cathode
Ultra high-intensity blue 3.3 4.0 150 20 468 470 InGaN
SMLU12D16W Diffused white Cathode
Ultra high-intensity pure green 3.3 4.0 700 20 525 530 InGaN
Ultra high-intensity amber 2.0 2.5 800 20 611 605 A GaInP
SMLU18D16C Clear Cathode
Ultra high-intensity amber 2.0 2.5 300 20 611 605 A GaInP
SMLU18D16W-S Diffused white Cathode
Red 1.9 2.5 15 20 630 620 AGaAsP
Green 2.0 2.5 20 20 560 567 GaP
3.3✕6 Amber 1.9 2.5 10 20 610 605 GaAsP
Rectangular
SML78420C Clear Cathode 20
Green 2.0 2.5 20 20 560 567 GaP
Orange 1.9 2.5 10 20 587 590 GaAsP
Green 2.0 2.5 20 20 560 567 GaP
Red 1.9 2.5 25 20 630 620 GaAsP
Green 2.0 2.5 35 20 560 567 GaP
Red 1.9 2.5 25 20 630 620 GaAsP
Orange 1.9 2.5 25 20 587 590 GaAsP
Amber 1.9 2.5 25 20 610 605 GaAsP
Green 2.0 2.5 35 20 560 567 GaP
3.3✕6 Orange 1.9 2.5 25 20 587 590 GaAsP
Bow-shaped SML79423C Clear Cathode 21
Green 2.0 2.5 35 20 560 657 GaP
Ultra high-intensity orange 2.0 2.5 150 20 590 590 A GaInP
SMLS79723C Clear Cathode
Yellow 2.0 2.5 40 20 570 571 GaP
SMLU72423C-S Clear Cathode
Ultra high-intensity green 2.2 2.5 30 20 560 567 A GaInP
Ultra high-intensity orange 2.0 2.5 150 20 590 590 A GaInP
SMLU79423C-S Clear Cathode
Ultra high-intensity green 2.2 2.5 30 20 560 567 A GaInP
137
Surface Mount LEDs

Ratings
GaP GaAsP GaA As A GaInP InGaN GaN
IF mA 30
VR V 4 5
Top ºC –30 to +85 –25 to +85
Uni-Color Surface Mount LEDs

Fig. No.
IV Peak wavelength Dominant wavelength
Outline Emitting color Part No. Lens color VF (V) (mcd) λp (nm) λp (nm) Chip
Condition material
Red SEC4201C Clear 1.9 2.5 10 20 630 620 GaAsP
Amber SEC4801C Clear 1.9 2.5 16 20 610 605 GaAsP
Orange SEC4901C Clear 1.9 2.5 13 20 587 590 GaAsP
Side view Yellow SEC4701C Clear 2.0 2.5 25 20 570 571 GaP
22
(flat lens type) Green SEC4401C Clear 2.0 2.5 22 20 560 567 GaP
Deep green SEC4401E-TG Tinted green 2.0 2.5 11 20 558 564 GaP
Pure green SEC4501C Clear 2.0 2.5 8.0 20 555 559 GaP
Ultra high-intensity blue SECU4E01C Clear 3.3 4.0 50 20 468 470 InGaN
Side view
(inner lens type) Yellow SEC4703C Clear 2.0 2.5 35 20 570 571 GaP 23
Green SEC4403C Clear 2.0 2.5 33 20 560 567 GaP
Pure green SEC4503C Clear 2.0 2.5 10 20 555 559 GaP
Deep red SEC1101C Clear 2.0 2.5 1.5 20 700 625 GaP
High-intensity red SEC1601C Clear 1.7 2.2 25 20 660 642 GaA As
3✕1.5 Yellow SEC1701C-YG Clear 2.0 2.5 25 20 570 571 GaP
24
(flat lens type) Green SEC1401C Clear 2.0 2.5 22 20 560 567 GaP
Pure green SEC1501C Clear 2.0 2.5 8.0 20 555 559 GaP
Ultra high-intensity pure green SECU1D01C Clear 3.3 4.0 150 20 525 525 InGaN
Ultra high-intensity blue SECU1E01C Clear 3.3 4.0 50 20 470 468 InGaN
Blue SEC1E01C Clear 3.9 4.8 6.0 20 430 466 GaN
High-intensity red SEC1603C Clear 1.7 2.2 35 20 660 642 GaA As
Ultra high-intensity red SECS1203C Clear 1.9 2.5 100 20 635 625 A GaInP
Ultra high-intensity amber SECS1803C Clear 1.9 2.5 10 3 615 607 A GaInP
3✕1.5
Ultra high-intensity orange SECS1903C Clear 1.9 2.5 70 20 590 590 A GaInP 25
(inner lens type)
Yellow SEC1703C Clear 2.0 2.5 35 20 570 571 GaP
Green SEC1403C Clear 2.0 2.5 33 20 560 567 GaP
Pure green SEC1503C Clear 2.0 2.5 10 20 555 559 GaP
138
Surface Mount LEDs
Uni-color / Bi-color Surface Mount LEDs with two elements

Fig. No.
Outline Part No. Emitting color Lens color IV Peak wavelength Dominant wavelength
VF (V) (mcd) λp (nm) λp (nm) Chip
Condition material
Red 1.9 2.5 10 20 630 620 GaAsP
SEC2422C Clear
Green 2.0 2.5 20 20 560 567 GaP
Green 2.0 2.5 20 20 560 567 GaP
SEC2442C Clear
Green 2.0 2.5 20 20 560 567 GaP
High-intensity red 1.7 2.2 20 20 660 642 GaA As
SEC2462C Clear
Green 2.0 2.5 20 20 560 567 GaP
3✕2.5 Orange 1.9 2.5 10 20 587 590 GaAsP
SEC2492C Clear 26
(flat lens type) Green 2.0 2.5 20 20 560 567 GaP
Pure green 2.0 2.5 5.0 20 555 559 GaP
SEC2552C Clear
Pure green 2.0 2.5 5.0 20 555 559 GaP
Orange 1.9 2.5 10 20 587 590 GaAsP
SEC2592C Clear
Pure green 2.0 2.5 5.0 20 555 559 GaP
SEC2762C-YG Clear
Yellow 2.0 2.5 20 20 570 571 GaP
Amber 1.9 2.5 20 20 610 605 GaAsP
SEC2484C Clear
Green 2.0 2.5 30 20 560 567 GaP
Pure green 2.0 2.5 10 20 555 559 GaP
SEC2554C Clear
Pure green 2.0 2.5 10 20 555 559 GaP
3✕2.5 Orange 1.9 2.5 20 20 587 590 GaAsP
SEC2494C Clear 27
(inner lens type) Green 2.0 2.5 30 20 560 567 GaP
SEC2764C Clear
Yellow 2.0 2.5 50 20 570 571 GaP
Yellow 2.0 2.5 50 20 570 571 GaP
SEC2774C Clear
Yellow 2.0 2.5 50 20 570 571 GaP
139
Infrared LEDs
Parameter Unit Ratings Conditions
IF mA 150
VR V 5
Infrared LEDs
Fig. No.
Contact
mount
Radiant intensity Ie Peak wavelength
Outline Part No. Lens color VF (V) λp (nm) Chip
(mW/sr)
Condition material
typ max typ typ
SID1010CM Clear 1.3 1.5 130 940 GaAs
SID1K10CM Clear 1.3 1.5 200 940 GaAs
28
SID1010CXM Clear 1.3 1.5 80 940 GaAs
SID1K10CXM Clear 1.3 1.5 110 (Constant 940 GaAs
voltage)
SID1050CM Clear 1.3 1.5 250 940 GaAs 29
Vcc=3V,
5 Round SID303C Clear 1.3 1.5 80 R=2.2Ω 940 GaAs
Transparent
SID313BP light purple 1.3 1.5 130 940 GaAs
Transparent
SID1003BQ light navy blue 1.3 1.5 180 940 GaAs
Transparent 30
SID307BR dark navy blue 1.3 1.5 200 940 GaAs
SID1G307C Clear 1.5 1.8 50 850 GaAs
SID1G313C Clear 1.5 1.8 50 850 GaAs
SID2010C Clear 1.3 1.5 7 940 GaAs
3 Round IF=50mA 31
SID2K10C Clear 1.3 1.5 14 940 GaAs
3 ✕ 1.5
(inner lens type) SEC1G03C Clear 1.5 1.8 3 850 GaA As 25
chip
140
Ultraviolet LEDs
IF mA 30
IR mA 100 Max. rating of built-in Zener diode
Ultraviolet Surface Mount LEDs

Fig. No.
IV Peak wavelength Electrostatic withstand voltage
Outline Part No. Lens color VF (V) (mcd) λp (nm) (V) Chip
Condition Condition material
typ max typ IF(mA) typ typ
2.8 ✕ 3.5 SECU1V0AC Clear 3.7 4.0 2.2 20 385 4000 100pF, 1.5kΩ InGaN 32
141
Multi-chip LED Module (under development)
Absolute Maximum Ratings (Per element Ta=25ºC)

IF mA 40 With an infinite heatsink mounted
∆I F mA /ºC –0.25
VR V 5
Topr ºC –30 to +85
Colors compliant Color temperature [°K] Total flux [lm] Chromaticity x, y

Part No. Fig. No.
with JIS-Z9112 20mA 20mA 20mA
SEP8WD4001 Cool white 6400 30 0.32, 0.33
SEP8WN4001 Natural white 5000 30 0.34, 0.35
SEP8WE4001 White 4200 30 0.37, 0.37 33
SEP8WW4001 Warm white 3450 25 0.41, 0.38
SEP8WL4001 Light bulb 2875 25 0.44, 0.41
142
General-purpose LEDs - External Dimensions
(Unit: mm)
Resin heap 1.5max
0.65max
2-0.5±0.1
4.7±0.2
Fig.1 Fig.6
5.6±0.2 20.0min 5.0±0.5 7.6±0.2 Resin burr 0.3max
Cathode
19.0min 0.8 (1.0)
4.6±0.2
(2.54)
Cathode
5.0±0.2
(2.54)
Anode
1.0min 23.5min 7.7±0.5
0.8
0.5
0.5 1.1max Resin heap 1.5max
5.7±0.2
0.5±0.1
5.6±0.2
Fig.2
5.6±0.2 1.0min 23.0min (1.0) 7.6±0.2 Fig.7 1.0min 25.5min 5.0±0.2
5.0±0.2
±0.5
6.5
4.0±0.2
Cathode Cathode
2.2 0.8 1.5
(2.54)
(2.54)
0.5±0.1 4.8
0.5±0.1
0.65max
Resin heap 1.5max

0.4±0.1
0.45±0.1
Resin heap 1.5max
1.1max
Fig.3 Fig.8
1.0min 24.5min 5.0±0.2
5.6±0.2 (1.0) 6.9±0.2
4.0±0.2
1.0min 23.0min
5.0±0.2
(1.5)
2.2
Cathode
(2.54)
(2.54)
4.8
0.5±0.1
0.5±0.1
0.65max
0.45±0.1
0.65max
Resin heap 1.5max 0.4±0.1 Resin heap 0.8max

Cathode
Fig.4 Fig.9
Anode Resin burr 0.3max Resin heap 0.8max 3.5 1.0min 23.0min 5.5±0.5
0.5±0.1
(1.7) 3.5±0.1
0.5±0.1
0.8±0.2
0.65
max
Cathode
3.1±0.1
4.0±0.2
5.0±0.2
(2.54)
(2.54)
4.4
0.45±0.1
0.65max
1.0min 21.0min 9.4±0.3 0.4±0.1 Resin heap

0.8max
Cathode
Fig.5 Fig.10
±0.2 ±0.5 ±0.2
5.6 20.0min 5.5 8.2 3.5 1.0min 23.0min 4.5±0.5
19.0min 0.8 (1.0) (1.6) 2.5±0.1
±0.2
Cathode
0.8
Cathode
5.0±0.2
4.0±0.2
(2.54)
(2.54)
3.5
4.4
0.5±0.1
0.45±0.1
0.65max
1.1max
0.8
0.5 Resin heap 1.5max 0.4±0.1 Resin heap

0.8max
143
(Unit: mm)
Fig.11 1.0min 23.0min 5.5 Fig.16

3.5
(1.7) 3.5±0.1 Cathode 1.0min 25.8min 2.6±0.1
0.8±0.2
Cathode Resin burr

0.3max 1.7 (1.3)
3.1±0.1
3.1±0.1
3.8±0.1
4.0±0.2
(2.54)
(2.54)
4.4
0.45±0.1
0.45±0.1
Resin burr 0.3max
0.65max
0.4
0.65max
0.4±0.1 Resin heap Resin heap 1.5max
0.8max ±0.1
0.4
Cathode mark
Fig.12 3.5±0.1 Fig.17

3.1±0.1
Cathode 1.0min 25.8min 1.0min 23.0min 4.2±0.5
1.7 (1.3)
(2.54)
6.0±0.2
3.8
(5.0)
6.2
1.4
0.45±0.1
0.4 Resin heap 1.5max Cathode mark

0.65max
0.5±0.1
0.65max
Cathode Resin burr 0.3max
3.6
Resin heap 0.8max
0.5±0.1
3.3±0.2
Fig.13 Fig.18
3.1±0.1
1.55 1.0min 25.4min 4.0±0.1 1.0min 23.0min 5.8±0.5

(1.3) 3.9
(2.54)
3.6±0.2
6.0±0.2
3.8
(5.0)
6.2
1.4
0.45±0.1
0.4±0.1 Cathode
0.65max
Resin heap 1.5max

0.5+0.1
Cathode mark
Cathode 0.65max
3.6 Resin burr 0.3max
Resin heap 0.8max
3.1
0.5±0.1
Fig.14 Fig.19
5.6±0.2 20.0min 5.0±0.5 5.8±0.2 1.0min 1.5min 17.0min 10.6±0.5
5.0±0.2
Cathode 19.0min 0.8 (1.0) ±0.1 ±0.5 1.0 7.6±0.2

0.5 2.0
(2.54) (2.54)
5.8±0.2
4.9±0.2
(2.54)
Resin burr 0.3max

0.8
0.5±0.1
1.1max
3 – 0.5±0.1
0.5 Resin heap 1.5max

0.65max
Resin heap 1.5max

1.2
0.8
Fig.15 Fig.20
3.5 1.0min 23.0min 4.5
1.0min 1.5min 20.0min 3.9
(1.7) 2.5±0.1
(2.54) (2.54)
3.5±0.1
±0.2
6.0±0.2
(2.54)
4.4
6.2
4.0
0.8±0.2
0.4±0.1 0.45±0.1
0.65max
0.65max
0.5±0.1
Resin burr 0.3max

Cathode Resin burr 0.3max 3.6 Resin heap 1.5max
0.5+0.1
Resin heap 0.8max

3.3
144
(Unit: mm)
Fig.21 5.8±0.5 Fig.26 1.4±0.1

1.0min 1.5min 20.0min 3.9 Cathode
0.9 (0.5) 0.6±0.1 0.9
2.5 mark
1.5 Cathode
(2.54) (2.54)
3.6±0.2
6.0±0.2
6.2
1.0
3.0
2.0
1.5
1.0
0.5±0.1
0.65max Resin burr 0.3max
3.6 Resin heap 1.5max
0.5±0.1
Anode
3.1±0.2
Resin P.C.B.
B A
Fig.22 SEC4001
P.C.B. Cathode
Cathode mark
1.0 Resin
MAX 0.1
1.4±0.1
Fig.27 Cathode
2.5 mark 0.9 (0.5) 0.6±0.1 0.9
(1.6)
2.5
3.0
2.0
1.5
1.5 Cathode
1.0
(0.6)
3.0
2.0
1.5
1.0
1.5 0.9 (0.5)
±0.1 Anode
1.4 Anode
4-R0.35 Electrode burr Lens
0.8 Resin P.C.B.
1.8
Fig.23 SEC4003 ±0.1

B A
1.4
Cathode
1.5 mark 0.9 (0.5) 1.3 Cathode
Electrode burr
0.6
MAX 0.1
0.45
2.53
1.6
2.0
ø1.0
3.0
1.7
Fig.28
5.6±0.2 1.0min 23.0min (1.0) A
5.0±0.2
Cathode
1.03 Resin
(2.54)
Lens P.C.B. Anode
0.5±0.1
0.5±0.1
0.65max
Resin burr 0.3max

Resin heap 1.5max
Fig.24 1.4
0.5±0.1
Cathode
1.5 mark 0.9 (0.5) 1.3 Dimension A (mm)
Cathode SID1010CM 7.6±0.2
SID1K10CM
0.6
SID1010CXM 6.9±0.2
SID1K10CXM
3.0
2.0
1.5
1.6
P.C.B.
Resin Anode
Fig.29
1.0min 21.0min 9.4±0.3
0.5±0.1
0.5±0.1
Fig.25 Anode
0.65
max
1.5 Cathode 1.4 1.3

mark Cathode
5.0±0.2
(2.54)
0.9 (0.5)
0.6
Resin burr 0.3max

Cathode
Resin heap 0.8max
1.0
3.0
2.0
1.7
1.6
0.5±0.1
P.C.B.
Lens Resin Anode
145
(Unit: mm)
Fig.30 Fig.32
2.0min 24.0min 8.5±0.5 Surface Side view
3.5 1.4
5.6 Anode A (0.8) 3.2 0.2
(2.7)
4.8±0.2
(2.54)
0.6±0.1
0.6±0.1
1.1max
0.85+0.1
(2.4)
2.8
Cathode Resin burr 0.3max
Resin heap 1.5max

Cathode Mark
0.6±0.1
Side view
Dimension A (mm)
SID303C 3.0±0.5
Reverse Side
0.8
SID313BP 3.6±0.5 Inner circuit
SID1003BQ
ZD
SID307BR 4.2±0.5
SID1G307C
LED
2.6
Anode Cathode
Anode Cathode
Fig.31 Fig.33
±0.1 Resin: color White
1.0min 25.8min 3.5
Cathode
3.1±0.1
13.2 3.5
10.0 12.0
1.7 (1.3) 16 15 14 13 12 11 10 9
(2.54)
ø3.8
8.8 ±0.3
4.4
5.8
4.8
0.45±0.1
(0.8)
0.4
0.65max
Resin burr 0.3max

Heatsink (0.7)
Resin heap 1.5max 2.0
Mark
1 2 3 4 5 6 7 8 Resin
0.2 ±0.05
0.4±0.1
(0.5)
0.3 ±0.05 3.0±0.25 P1.0*3=3.0 ±0.25
146
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page Part No. Description Page
2SA1488/A Power transistor 80 SEC2422C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1513E 5ø Inverted-cone LED for Surface illumination 136
5ø Round Narrow-directivity LED, Direct
2SA1567 Power transistor 81 SEC2442C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1550CM mount supported 134
2SA1568 Power transistor 82 SEC2462C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1610C 5ø Round Standard LED (With Stopper) 134
2SA1908 Power transistor 83 SEC2484C 3 x 2.5 Surface Mount Inner Lens Type 139 SEL1610W 5ø Round Standard LED (With Stopper) 134
2-Chip LED
2SB1622 Power transistor 84 SEC2492C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1615C 5ø Round Narrow-directivity LED 134
3 x 2.5 Surface Mount Inner Lens Type
2SC3852 Power transistor 85 SEC2494C 2-Chip LED 139 SEL1710K 5ø Round Standard LED (With Stopper) 134
2SC4024 Power transistor 86 SEC2552C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1710KM 5ø Round Standard LED 134
2SC4065 Power transistor 87 SEC2554C 2-Chip LED 139 SEL1710Y 5ø Round Standard LED (With Stopper) 134
2SC4153 Power transistor 88 SEC2592C 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1713K 5ø Inverted-cone LED for Surface illumination 136
2SD2141 Power transistor 89 SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED 139 SEL1810A 5ø Round Standard LED (With Stopper) 134
2SD2382 Power transistor 90 SEC2764C 2-Chip LED 139 SEL1810AM 5ø Round Standard LED 134
2SD2633 Power transistor 91 SEC2774C 2-Chip LED 139 SEL1810D 5ø Round Standard LED (With Stopper) 134
2SK3710 MOS FET 108 SEC4201C Side-view Surface Mount LED 138 SEL1810DM 5ø Round Standard LED 134
2SK3711 MOS FET 109 SEC4203C Side-view Surface Mount Inner Lens TypeLED 138 SEL1813A 5ø Inverted-cone LED for Surface illumination 136
2SK3724 MOS FET 110 SEC4401C Side-view Surface Mount LED 138 SEL1850AM mount supported 134
2SK3800 MOS FET 111 SEC4401E-TG Side-view Surface Mount LED 138 SEL1850DM mount supported 134
2SK3801 MOS FET 112 SEC4403C Side-view Surface Mount Inner Lens TypeLED 138 SEL1910A 5ø Round Standard LED (With Stopper) 134
2SK3803 MOS FET 113 SEC4403E-TG Side-view Surface Mount Inner Lens TypeLED 138 SEL1910AM 5ø Round Standard LED 134
2SK3851 MOS FET 114 SEC4501C Side-view Surface Mount LED 138 SEL1910D 5ø Round Standard LED (With Stopper) 134
FKV460S MOS FET 115 SEC4503C Side-view Surface Mount Inner Lens TypeLED 138 SEL1910DM 5ø Round Standard LED 134
FKV660S MOS FET 116 SEC4701C Side-view Surface Mount LED 138 SEL1913K 5ø Inverted-cone LED for Surface illumination 136
FP812 Power transistor 92 SEC4703C Side-view Surface Mount Inner Lens TypeLED 138 SEL1950KM mount supported 134
MN611S Power transistor 93 SEC4801C Side-view Surface Mount LED 138 SEL2110R 3ø Round Type LED 135
MN638S Power transistor 94 SEC4803C Side-view Surface Mount Inner Lens TypeLED 138 SEL2110S 3ø Round Type LED 135
MP2-202S Ultrafast Recovery Diode (Surface Mount) 130 SEC4901C Side-view Surface Mount LED 138 SEL2110W 3ø Round Type LED 135
MPL-102S Ultrafast Recovery Diode (Surface Mount) 130 SEC4903C Side-view Surface Mount Inner Lens TypeLED 138 SEL2210R 3ø Round Type LED 135
PZ628 Power Zener Diode (Surface Mount) 129 SECS1203C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2210S 3ø Round Type LED 135
SDA03 Power transistor Array (Surface Mount) 96 SECS1803C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2210W 3ø Round Type LED 135
SDA04 Power transistor Array (Surface Mount) 97 SECS1903C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL2213C 3ø Inverted-cone LED for Surface illumination 136
SDC09 Power transistor Array (Surface Mount) 98 SECU1D01C 3 x 1.5 Surface Mount LED 138 SEL2215R 3ø Round Type Narrow-directivity LED 136
SDH04 High-side Power Switch IC 24 SECU1E01C 3 x 1.5 Surface Mount LED 138 SEL2215S 3ø Round Type Narrow-directivity LED 136
SDK06 MOS FET Array ( Surface mount ) 117 SECU1V0AC 2.8 x 3.5 Ultraviolet Surface Mount LED 141 SEL2410E 3ø Round Type LED 136
SDK08 MOS FET Array ( Surface mount ) 118 SECU4E01C Side-view Surface Mount LED 138 SEL2410G 3ø Round Type LED 136
SDK09 MOS FET Array ( Surface mount ) 119 SEL1110R 5ø Round Standard LED (With Stopper) 134 SEL2413E 3ø Inverted-cone LED for Surface illumination 136
SEC1101C 3 x 1.5 Surface Mount LED 138 SEL1110S 5ø Round Standard LED (With Stopper) 134 SEL2413G 3ø Inverted-cone LED for Surface illumination 136
SEC1201C 3 x 1.5 Surface Mount LED 138 SEL1110W 5ø Round Standard LED (With Stopper) 134 SEL2415E 3ø Round Type Narrow-directivity LED 136
SEC1203C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1210R 5ø Round Standard LED (With Stopper) 134 SEL2415G 3ø Round Type Narrow-directivity LED 136
SEC1401C 3 x 1.5 Surface Mount LED 138 SEL1210RM 5ø Round Standard LED 134 SEL2510C 3ø Round Type LED 136
SEC1401E-TG 3 x 1.5 Surface Mount LED 138 SEL1210S 5ø Round Standard LED (With Stopper) 134 SEL2510G 3ø Round Type LED 136
SEC1403C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1210SM 5ø Round Standard LED 134 SEL2513E 3ø Inverted-cone LED for Surface illumination 136
SEC1403E-TG 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1213C 5ø Inverted-cone LED for Surface illumination 136 SEL2515C 3ø Round Type Narrow-directivity LED 136
SEC1501C 3 x 1.5 Surface Mount LED 138 SEL1250RM mount supported 134 SEL2610C 3ø Round Type LED 135
SEC1503C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1250SM mount supported 134 SEL2613CS-S 3ø Inverted-cone LED for Surface illumination 136
SEC1601C 3 x 1.5 Surface Mount LED 138 SEL1410E 5ø Round Standard LED (With Stopper) 134 SEL2710K 3ø Round Type LED 136
SEC1603C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1410EM 5ø Round Standard LED 134 SEL2710Y 3ø Round Type LED 136
SEC1701C-YG 3 x 1.5 Surface Mount LED 138 SEL1410G 5ø Round Standard LED (With Stopper) 134 SEL2713K 3ø Inverted-cone LED for Surface illumination 136
SEC1703C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1410GM 5ø Round Standard LED 134 SEL2715K 3ø Round Type Narrow-directivity LED 136
SEC1801C 3 x 1.5 Surface Mount LED 138 SEL1413E 5ø Inverted-cone LED for Surface illumination 136 SEL2715Y 3ø Round Type Narrow-directivity LED 136
SEC1803C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1450EKM mount supported 134 SEL2810A 3ø Round Type LED 135
SEC1901C 3 x 1.5 Surface Mount LED 138 SEL1450GM-YG mount supported 134 SEL2810D 3ø Round Type LED 135
SEC1903C 3 x 1.5 Surface Mount Inner Lens TypeLED 138 SEL1453CEMKT 4.6 x 5.6ø Egg-shaped LED 134 SEL2813A 3ø Inverted-cone LED for Surface illumination 136
SEC1E01C 3 x 1.5 Surface Mount LED 138 SEL1510C 5ø Round Standard LED (With Stopper) 134 SEL2815A 3ø Round Type Narrow-directivity LED 136
SEC1G03C 3 x 1.5 Infrared Surface Mount Inner Lens Type LED 140 SEL1510CM 5ø Round Standard LED 134 SEL2815D 3ø Round Type Narrow-directivity LED 136
147
Part No. Description Page Part No. Description Page Part No. Description Page
SEL2910A 3ø Round Type LED 136 SEL6410G 3ø Round Type LED, Direct mount supported 135 SELU5B20C 5mm Pitch Lead Rectangular LED,
Direct mount supported 136
3ø Inverted-cone LED for Surface illumination,
SEL2910D 3ø Round Type LED 136 SEL6413E Direct mount supported 136 SELU5E23C 5mm Pitch Lead Bow-shaped LED,
3ø Inverted-cone LED for Surface illumination, 3ø Inverted-cone LED for Surface illumination,
SEL2913K 3ø Inverted-cone LED for Surface illumination 136 SEL6413E-TG Direct mount supported 136 SELU6213C-S Direct mount supported 136
3ø Round Type Wide-directivity LED,
SEL2915A 3ø Round Type Narrow-directivity LED 136 SEL6414E Direct mount supported 135 SELU6214C 3ø Round Type Wide-directivity LED,
3ø Round Type Wide-directivity LED, 3ø Round Type Wide-directivity LED,
SEL2915D 3ø Round Type Narrow-directivity LED 136 SEL6414E-TG Direct mount supported 135 SELU6414G-S Direct mount supported 135
3ø Round Type Narrow-directivity LED,
SEL2E10C 3ø Round Type LED 136 SEL6415E Direct mount supported 135 SELU6614C-S 3ø Round Type Wide-directivity LED,
SEL4110R 4ø Round Type LED 134 SEL6510C 3ø Round Type LED, Direct mount supported 135 SELU6614W-S Direct mount supported 135
SEL4110S 4ø Round Type LED 134 SEL6510G 3ø Round Type LED, Direct mount supported 135 SELU6714C 3ø Round Type Wide-directivity LED,
4ø Round Type Wide-directivity LED, 3ø Inverted-cone LED for Surface illumination,
SEL4114R Direct mount supported 135 SEL6513C Direct mount supported 136 SELU6910C-S 3ø Round Type LED, Direct mount supported 135
4ø Round Type Wide-directivity LED, 3ø Round Type Wide-directivity LED, 3ø Round Type Wide-directivity LED,
SEL4114S Direct mount supported 135 SEL6514C Direct mount supported 135 SELU6914C-S Direct mount supported 135
SEL4210R 4ø Round Type LED 134 SEL6515C Direct mount supported 135 SEP8WD4001 Multi-chip LED Module 142
SEL4210S 4ø Round Type LED 134 SEL6710K 3ø Round Type LED, Direct mount supported 135 SEP8WE4001 Multi-chip LED Module 142
SEL4214R Direct mount supported 135 SEL6710Y 3ø Round Type LED, Direct mount supported 135 SEP8WL4001 Multi-chip LED Module 142
SEL4214S Direct mount supported 135 SEL6714K Direct mount supported 135 SEP8WN4001 Multi-chip LED Module 142
SEL4410E 4ø Round Type LED 135 SEL6714W Direct mount supported 135 SEP8WW4001 Multi-chip LED Module 142
SEL4410G 4ø Round Type LED 135 SEL6715C Direct mount supported 135 SFPB-54 Schottky Barrier Diode(Surface Mount) 130
SEL4414E Direct mount supported 135 SEL6810A 3ø Round Type LED, Direct mount supported 135 SFPB-56 Schottky Barrier Diode(Surface Mount) 130
SEL4414G Direct mount supported 135 SEL6810D 3ø Round Type LED, Direct mount supported 135 SFPB-59 Schottky Barrier Diode(Surface Mount) 130
SEL4510C 4ø Round Type LED 135 SEL6814A Direct mount supported 135 SFPB-64 Schottky Barrier Diode(Surface Mount) 130
SEL4514C Direct mount supported 135 SEL6910A 3ø Round Type LED, Direct mount supported 135 SFPB-66 Schottky Barrier Diode(Surface Mount) 130
SEL4710K 4ø Round Type LED 134 SEL6910D 3ø Round Type LED, Direct mount supported 135 SFPB-69 Schottky Barrier Diode(Surface Mount) 130
SEL4710Y 4ø Round Type LED 134 SEL6914A Direct mount supported 135 SFPB-74 Schottky Barrier Diode(Surface Mount) 130
SEL4714K Direct mount supported 135 SEL6914W Direct mount supported 135 SFPB-76 Schottky Barrier Diode(Surface Mount) 130
4ø Round Type Wide-directivity LED, 3ø Round Type Narrow-directivity LED,
SEL4714Y Direct mount supported 135 SEL6915A Direct mount supported 135 SFPE-64 Schottky Barrier Diode(Surface Mount) 130
SEL4810A 4ø Round Type LED 134 SEL6E10C 3ø Round Type LED, Direct mount supported 135 SFPJ-53 Schottky Barrier Diode(Surface Mount) 130
SEL4810D 4ø Round Type LED 134 SELS1E10CXM-M 5ø Round Wide-directivity LED 134 SFPJ-63 Schottky Barrier Diode(Surface Mount) 130
4ø Round Type Wide-directivity LED, 5mm Pitch Lead Bow-shaped LED,
SEL4814A Direct mount supported 135 SELS5223C Direct mount supported 136 SFPJ-73 Schottky Barrier Diode(Surface Mount) 130
4ø Round Type Wide-directivity LED, 5mm Pitch Lead Bow-shaped LED,
SEL4814D Direct mount supported 135 SELS5923C Direct mount supported 136 SFPL-52 Ultrafast Recovery Diode(Surface Mount) 130
5mm Pitch Lead Bow-shaped LED,
SEL4910A 4ø Round Type LED 134 SELS5B23C Direct mount supported 136 SFPL-62 Ultrafast Recovery Diode(Surface Mount) 130
3ø Inverted-cone LED for Surface illumination,
SEL4910D 4ø Round Type LED 134 SELS6B13W Direct mount supported 136 SFPL-64 Ultrafast Recovery Diode(Surface Mount) 130
SEL4914A Direct mount supported 135 SELS6B14C Direct mount supported 135 SFPM-52 Rectifier Diode(Surface Mount) 130
SEL4914D Direct mount supported 135 SELS6D14C Direct mount supported 135 SFPM-54 Rectifier Diode(Surface Mount) 130
5mm Pitch Lead Rectangular LED, 3ø Round Type Wide-directivity LED,
SEL5220S Direct mount supported 136 SELS6E14C-M Direct mount supported 135 SFPM-62 Rectifier Diode(Surface Mount) 130
SEL5223S Direct mount supported 136 SELU1210CXM 5ø Round Wide-directivity LED 134 SFPM-64 Rectifier Diode(Surface Mount) 130
5mm Pitch Lead Rectangular LED, 5ø Round Narrow-directivity LED,
SEL5420E Direct mount supported 136 SELU1250CM Direct mount supported 134 SFPW-56 Schottky Barrier Diode(Surface Mount) 130
SEL5423E Direct mount supported 136 SELU1253CMKT 4.6 x 5.6ø Egg-shaped LED 134 SFPZ-68 Power Zener Diode 129
5mm Pitch Lead Rectangular LED,
SEL5520C Direct mount supported 136 SELU1910CXM-S 5ø Round Wide-directivity LED 134 SG-9CNR Rectifier Diode for Alternator 127
SEL5523C Direct mount supported 136 SELU1D10CXM 5ø Round Wide-directivity LED 134 SG-9CNS Rectifier Diode for Alternator 127
SEL5620C Direct mount supported 136 SELU1D50CM Direct mount supported 134 SG-9CZR Rectifier Diode for Alternator 127
SEL5723C Direct mount supported 136 SELU1E10CXM 5ø Round Wide-directivity LED 134 SG-9CZS Rectifier Diode for Alternator 127
SEL5820A Direct mount supported 136 SELU1E50CM Direct mount supported 134 SG-9LCNR Rectifier Diode for Alternator 127
SEL5823A Direct mount supported 136 SELU2215R-S 3ø Round Type Narrow-directivity LED 136 SG-9LCNS Rectifier Diode for Alternator 127
SEL5920A Direct mount supported 136 SELU2610C-S 3ø Round Type LED 135 SG-9LLCNR Rectifier Diode for Alternator 127
SEL5923A Direct mount supported 136 SELU2710C 3ø Round Type LED 136 SG-9LLCNS Rectifier Diode for Alternator 127
SEL5E20C Direct mount supported 136 SELU2B10A-S 3ø Round Type LED 135 SG-9LLCZR Rectifier Diode for Alternator 127
SEL5E23C Direct mount supported 136 SELU2D10C 3ø Round Type LED 136 SG-9LLCZS Rectifier Diode for Alternator 127
SEL6110R 3ø Round Type LED, Direct mount supported 135 SELU2E10C 3ø Round Type LED 136 SG-10LLR Rectifier Diode for Alternator 127
SEL6110S 3ø Round Type LED, Direct mount supported 135 SELU4410CKT-S 4ø Round Type LED 135 SG-10LLS Rectifier Diode for Alternator 127
SEL6210R 3ø Round Type LED, Direct mount supported 135 SELU5220C-S Direct mount supported 136 SG-10LLXR Rectifier Diode for Alternator 127
SEL6210S 3ø Round Type LED, Direct mount supported 135 SELU5620S-S Direct mount supported 136 SG-10LLXS Rectifier Diode for Alternator 127
3ø Round Type Wide-directivity LED, 5mm Pitch Lead Rectangular LED,
SEL6214S Direct mount supported 135 SELU5720C Direct mount supported 136 SG-10LLZ23R Rectifier Diode for Alternator 127
3ø Round Type Narrow-directivity LED, 5mm Pitch Lead Bow-shaped LED,
SEL6215S Direct mount supported 135 SELU5723C Direct mount supported 136 SG-10LLZ23S Rectifier Diode for Alternator 127
SEL6410E 3ø Round Type LED, Direct mount supported 135 SELU5820C-S Direct mount supported 136 SG-10LR Rectifier Diode for Alternator 127
148
Part No. Description Page Part No. Description Page
SG-10LS Rectifier Diode for Alternator 127 SML1516W 5ø Round Standard Bicolor LED 137
SG-10LXR Rectifier Diode for Alternator 127 SML1816W 5ø Round Standard Bicolor LED 137
SG-10LXS Rectifier Diode for Alternator 127 SML19416W 5ø Round Standard Bicolor LED 137
SG-10LZ23R Rectifier Diode for Alternator 127 SML72420C 3.3 x 6 Rectangular Type Bicolor LED 137
SG-10LZ23S Rectifier Diode for Alternator 127 SML72423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SG-14LXZS Rectifier Diode for Alternator 127 SML72923C 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SG-14LXZS Rectifier Diode for Alternator 127 SML78420C 3.3 x 6 Rectangular Type Bicolor LED 137
SHV-01JN High-Voltage Rectifier Diode for Ignition Coil 128 SML78423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SHV-05J High-Voltage Rectifier Diode for Ignition Coil 128 SML79420C 3.3 x 6 Rectangular Type Bicolor LED 137
SHV-06JN High-Voltage Rectifier Diode for Ignition Coil 128 SML79423C 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SI-3001S Linear Regulator IC 8 SMLS79723C 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SI-3003S Linear Regulator IC 10 SMLU12D16W 5ø Round Standard Bicolor LED 137
SI-3101S Linear Regulator IC 12 SMLU12E16C 5ø Round Standard Bicolor LED 137
SI-3102S Linear Regulator IC 14 SMLU12E16W 5ø Round Standard Bicolor LED 137
SI-3201S Switching Regulator IC 22 SMLU18D16C 5ø Round Standard Bicolor LED 137
SI-3322S System Regulator IC 16 SMLU18D16W-S 5ø Round Standard Bicolor LED 137
SI-5151S High-side Power Switch IC 26 SMLU72423C-S 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SI-5152S High-side Power Switch IC 28 SMLU79423C-S 3.3 x 6 Bow-Shaped Type Bicolor LED 137
SI-5153S High-side Power Switch IC 30 SPF0001 Power transistor Array (Surface Mount) 100
SI-5154S High-side Power Switch IC 32 SPF3004 System Regulator IC 18
SI-5155S High-side Power Switch IC 34 SPF3006 System Regulator IC 20
SI-5300 Full-bridge Motor Driver IC 60 SPF5002A Low-side Power Switch IC 50
SID1003BQ 5ø Round Infrade LED 140 SPF5003 High-side Power Switch IC 40
SID1010CM 5ø Round Infrade LED 140 SPF5004 High-side Power Switch IC 42
SID1010CXM 5ø Round Infrade LED 140 SPF5007 High-side Power Switch IC 44
SID1050CM 5ø Round Infrade LED, Direct mount supported 140 SPF5009 Low-side Power Switch IC 52
SID1G307C 5ø Round Infrade LED 140 SPF5012 Low-side Power Switch IC 54
SID1G313C 5ø Round Infrade LED 140 SPF5017 High-side Power Switch IC 46
SID1K10CM 5ø Round Infrade LED 140 SPF5018 High-side Power Switch IC 48
SID1K10CXM 5ø Round Infrade LED 140 SPF7211 Stepper-motor Driver IC 58
SID2010C 3ø Round Infrade LED 140 SPF7301 Full-bridge Motor Driver IC 62
SID2K10C 3ø Round Infrade LED 140 SSD103 Power transistor 95
SID303C 5ø Round Infrade LED 140 STA315A Power transistor Array 101
SID307BR 5ø Round Infrade LED 140 STA335A Power transistor Array 102
SID313BP 5ø Round Infrade LED 140 STA415A Power transistor Array 103
SJPZ-E18 Power Zener Diode (Surface Mount) 129 STA460C Power transistor Array 104
SJPZ-K28 Power Zener Diode (Surface Mount) 129 STA508A MOS FET Array 123
SLA2402M High Voltage Driver IC for HID Lamps 64 STA509A MOS FET Array 124
SLA2403M High Voltage Driver IC for HID Lamps 68 SZ-10N27 Power Zener Diode (Surface Mount) 129
SLA2501M High-side Power Switch IC 36 SZ-10N40 Power Zener Diode (Surface Mount) 129
SLA2502M High-side Power Switch IC 38 SZ-10NN27 Power Zener Diode (Surface Mount) 129
SLA4708M Stepper-motor Driver IC 56 SZ-10NN40 Power Zener Diode (Surface Mount) 129
SLA5027 MOS FET Array 120 TFC561D 3-Pin Reverce Conducting Thyrisyor for 125
HID Lamp Ignition
SLA5098 MOS FET Array 121 TFC562D 3-Pin Reverce Conducting Thyrisyor for 126
HID Lamp Ignition
SLA8004 Power transistor Array 99
SMA2409M High Voltage Driver IC for HID Lamps 72
SMA5113 MOS FET Array 122
SML11516C 5ø Round Standard Bicolor LED 137
SML1216C 5ø Round Standard Bicolor LED 137
SML1216W 5ø Round Standard Bicolor LED 137
149
•http://www.sanken-ele.co.jp Sanken products are manufactured and delivered to the customer based
SANKEN ELECTRIC CO.,LTD. ISO 9001/14001 Certified on a strict quality and environmental control system established and
certified by the ISO 9001/14001 international certification standards.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo
Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp),
Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments
Overseas Sales Offices

●Asia ●North America
Singapore Allegro MicroSystems, Inc.
Sanken Electric Singapore Pte. Ltd. 115 Northeast Cutoff, Worcester, MA 01606 General Information
150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore Tel: 1-508-853-5000 Fax: 1-508-853-3353
Tel: 65-6291-4755 Fax: 65-6297-1744
●Europe
China Sanken Power Systems (UK) Ltd.
Sanken Electric Hong Kong Co., Ltd. Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 44-1443-742-333 Fax: 44-1443-743-354
Tel: 852-2735-5262 Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China
Tel: 86-21-5208-1177 Fax: 86-21-5208-1757
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700 Fax: 82-2-3272-2145
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
•This
The information contained in this document is correct as of July 2006.
is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign
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SANKEN ELECTRIC CO.,LTD.

Dropper Type Regulator ICs ......................................................... 8

Dropper Type System Regulator ICs ...................................... 16

Switching Type Regulator ICs ................................................... 22

1-2. Power Switch ICs

Low-side Switch ICs ...................................................... 50

1-3. Motor Driver ICs

DC Motor Driver ICs ...................................................................... 60

1-4. HID Lamp Driver ICs ..................................................................... 64

1-5. Custom ICs ....................................................................................... 76

2-1-2. Transistor Arrays ............................................................... 96

2-2. MOS FETs

2-2-2. MOS FET Arrays ............................................................. 117

2-4-2. High-voltage Diodes for Igniter ................................ 128

2-4-3. Power Zener Diodes ..................................................... 129

2-4-4. General-purpose Diodes ............................................ 130

3-2. Bi-Color LED Lamps .................................................................. 137

3-3. Surface Mount LEDs .................................................................. 138

3-4. Infrared LEDs .................................................................................. 140

3-6. Multi-chip Modules .................................................................... 142

Part Number Index in Alphanumeric Order ......................................... 147

•Diodes (p.127) •Motor driver power transistors (p.68 and after)

Car Navigation and Audio

Transmission ABS and VDC

SI-3003S (5V/0.8A, 3-terminal) ....................... 10 DC Motor Driver ICs .................................... 60

SI-3322S (5V, Surface-mount) ........................ 16 1-4. HID Lamp Driver ICs

1-5. Custom ICs ..................................... 76

1-2. Power Switch ICs

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52

■ Temperature and Reliability

G746 Shin-Etsu Chemical Co., Ltd.

Features External Dimensions (unit: mm)

PD1 18 W With infinite heatsink

Storage Temperature Tstg – 40 to +125 ºC (Forming No. 1101)

Junction to Case Thermal

Junction to Ambient-Air Thermal

Ripple Rejection RREJ 54 dB f =100 to 120Hz Standard Circuit Diagram

Overcurrent Protection Starting D1

Control Voltage OPEN SI-3001S

■ Io vs VDIF Characteristicsc ■ Line Regulation ■ Load Regulation

Output voltage VO (V)

Output voltage VO (V)

■ Output Voltage Temperature Characteristics ■ Rise Characteristics ■ Quiescent Circuit Current

Quiescent current lq (mA)

■ ON/OFF Control Characteristics ■ Overcurrent Protection Characteristics ■ Thermal Protection Characteristics

Output voltage VO (V)

Note on Thermal Protection Characteristics:

Input voltage VIN (V) Operating temperature Ta (ºC)

Features External Dimensions (unit: mm)

● Voltage accuracy of ±2% 3.2 ±0.2 10 ±0.2 2.8 ±0.2

● Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A

DC input voltage VIN 35 V 0.94 ±0.15

PD1 22 W With infinite heatsink

Operating temperature TOP –40 to +100 ºC Terminal connections

Electrical Characteristics Equivalent Circuit Diagram

Input voltage VIN 6*2 30 * 1 V

Load regulation VO LOAD 100 mV IO =0 to 0.5A REF

Ripple rejection RREJ 54 dB f=100 to 120Hz

Quiescent circuit current Iq 3 10 mA IO =0A

Co : Output capacitor (47 to 100µF, 50V)

■ Io vs VDIF Characteristics ■ Line Regulation ■ Load Regulation

Output voltage VO (V)

Input voltage VIN 62 30 1 V