ESCUELA DE CIENCIAS BASICAS, TECNOLOGIA E INGENIERIA

ECBTI
SEÑALES Y SISTEMAS

UNIVERSITY NACIONAL ABIERTA Y A DISTANCIA UNAD

PROGRAMS THE ENGINEERING ELECTRONIC AND TELECOMMUNICATIONS

TASK CYCLE 2

PRESENTED TO:

ING. IVAN CAMILO NIETO

PRESENTED FOR:

JHOSER QUINTANA PULIDO.

1.079.180.536

GROUP: 299002_6

CEAD – NEIVA

November , 2018

1
 ESCUELA DE CIENCIAS BASICAS, TECNOLOGIA E INGENIERIA
ECBTI
SEÑALES Y SISTEMAS

 The references listed in knowledge environment, and using other source like UNAD
library, find and list different unipolar and bipolar devices and share it in the work
forum.
 When you have at least five different devices, select one and write an article to describe
their features and different application.
 Design and build/simulate a circuit to demonstrate its behavior.
 Share the article written in the work forum to your group mates.
 As in the forum you’ll find other articles, read and feedback them to have another point
of view. If you need to correct your article (according to the feedback), it’s the right
time to do it.
 Remember that your feedback must show an adequate lecture of the document read
and argument your position.

SOLUTION

 When you have at least five different devices, select one and write an article to describe
their features and different application.

Rectifying diodes

Led Diodes

Triac

Diac

Shottky transistors

JFET transistors

2
 ESCUELA DE CIENCIAS BASICAS, TECNOLOGIA E INGENIERIA
ECBTI
SEÑALES Y SISTEMAS

The field effect transistor or JFET is a device unipolar consisting of three pins or terminals Named drainage, door
and source, it can be said that it is formed by a layer of type “n” on a substrate type “𝑝− ”, is a device controlled
by input voltage , therefore it does not require polarization current, there is a semiconductor channel between
the drain and the source through which the electric charge flows, We can also say that a transistor JFET drive
between your terminals “D” Y ”S” or Drain and source when the voltage between the door and the source is zero.

It can be said that its operation is based on the deflection zones that surround each of the zones “p” Being
polarized in reverse.

When we increase the voltage in the gate-source diode, depletion zones get bigger, which makes the current
that goes from the source to a drain have more difficulties to cross the channel that is created between the
deplexión zones, the greater the reverse voltage in the gate-source diode, the smaller the current between the
source and the drain.

3
 ESCUELA DE CIENCIAS BASICAS, TECNOLOGIA E INGENIERIA
ECBTI
SEÑALES Y SISTEMAS

BIBLIOGRAPHIC REFERENCES

 Enderlein, R., & Horing, N. M. (1997). “Insulator-semiconductor junction in an external

voltage” in Fundamentals Of Semiconductor Physics And Devices. Singapore: World
Scientific. Retrieved
fromhttp://bibliotecavirtual.unad.edu.co:2048/login?url=http://search.ebscohost.com/l
ogin.aspx?direct=true&db=e000xww&AN=82603&lang=es&site=ehost-
live&ebv=EB&ppid=pp_612
 Levinshtein, M. E., Simin, G. S., & Perelman, M. M. (1998). “Bipolar transistor”
in Transistors From Crystals To Integrated Circuits. Singapore: World Scientific. Retrieved
from:http://bibliotecavirtual.unad.edu.co:2048/login?url=http://search.ebscohost.com/l
ogin.aspx?direct=true&db=e000xww&AN=65768&lang=es&site=ehost-
live&ebv=EB&ppid=pp_169
 Dye, N., & Granberg, H. (2001). “FETs and BJTs: Comparison of parameters and
circuitry” in Radio Frequency Transistors: Principles and Practical Applications. Boston:
Newnes. Retrieved
from:http://bibliotecavirtual.unad.edu.co:2048/login?url=http://search.ebscohost.com/l
ogin.aspx?direct=true&db=e000xww&AN=195602&lang=es&site=ehost-
live&ebv=EB&ppid=pp_43

 Transistor JFET (2018) recuperado de: https://es.wikiversity.org/wiki/Transistor_JFET