High-Voltage Power MOSFETs

p o w e r m o s f e ts
SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S,
SiHF22N 6 0 S

Product Sheet
New 600-V MOSFETs with Super Junction
Technology
Super Junction Technology in TO-220, TO-247, TO-220F,
and TO-263 Packages

Key Benefits
• Dramatic reduction of maximum RDS(on) at VGS = 10 V: 0.190 Ω
• Ultra-low gate charge: Qg = 98 nC
• Increased efficiency for SMPS
• High E AR capability
• Low figure-of-merit (FOM) Ron x Qg
• 100% avalanche tested
• High peak current capability
• dV/dt ruggedness
• Effective COSS specified
• Improved transconductance
• High power dissipation capability

APPLICATIONS
• Power factor correction (PFC) and pulse width modulation (PWM) in a
wide range of electronics including:
º LCD TVs
º PCs
º Servers
º Switchmode power supplies (SMPS)
º Telecom systems

w w w. v i s h a y. c o m Datasheets are available on our web site at www.vishay.com

for 600-V MOSFETs - http://www.vishay.com/doc?91373, 91393, 91394, 91395
 Vishay Siliconix

Power MOSFET
SiHF22N60S
FEATURES
SiHF22N60S PRODUCT SUMMARY
• High EAR Capability
SiHP22N60S VDS at TJ max. (V) 650 Vishay Siliconix
Vishay Siliconix RDS(on) (Ω) VGS = 10 V 0.190 • Lower Figure-of-Merit Ron x Qg
Vishay Siliconix Qg (Max.) (nC) 98 • 100 % Avalanche Tested
Power MOSFETs Qgs (nC) 17 SiHG22N60S
Power MOSFET • High Peak Current Capability
Qgd (nC) 25
Power MOSFET • dV/dt Ruggedness Vishay Siliconix
Configuration Single
• Effective Coss Specified
FEATURES
PRODUCT SUMMARY D • Improved Transconductance
• FEATURES
High E Capability
AR TO-220
Power MOSFET
VPRODUCT SUMMARY
DS at TJ max. (V) 650 • Improved trr/Qrr
RVDS(on) TJ max. (V)
DS at (Ω) VGS = 10 V 650 0.190 • • Lower
High EFigure-of-Merit
AR Capability R x Q
on g
• Improved Gate
ORDERING Charge
INFORMATION
(Max.)(Ω)
QRgDS(on) (nC) VGS = 10 V 98 0.190 Lower
• • 100 Figure-of-Merit
% Avalanche TestedRon x Qg
FEATURES
• High Power Dissipation Capability
(Max.) (nC)
QQgsg (nC) 98
17 % Avalanche PRODUCT SUMMARY G Package TO-220
• • High
100 Peak Current Tested
Capability • High EAR Capability
(nC)
QQgdgs(nC) 17
25 VDS at TJ max. (V) 650 • Compliant to RoHS Directive 2002/95/EC
• • dV/dt Peak Current Capability
High Ruggedness S
Qgd (nC) 25 RDS(on) (Ω) VGS = 10 V 0.190 Lead• Lower
(Pb)-free
Figure-of-Merit Ron x Qg SiHP22N60S-E3
Configuration Single D
dV/dt Ruggedness G
Configuration Single • • Effective Coss Specified Qg (Max.) (nC) 98 S • 100 % Avalanche Tested
D • • Improved Coss Specified
Effective Transconductance Qgs (nC) 17 SiHF22N60S
TO-220 FULLPAK N-Channel MOSFET • High Peak Current Capability
D Qgd (nC) 25
• • Improved
Improvedt Transconductance
rr/Qrr • dV/dt Ruggedness Vishay Siliconix
TO-220 Configuration Single
• • Improved
ImprovedGate
trr/QrrCharge
ORDERING INFORMATION • Effective Coss Specified
Improved
• • High PowerGate
Dissipation
Charge Capability D
G Package • Improved Transconductance
TO-220
Power MOSFET
TO-247
G High Power
• • Compliant to Dissipation Capability
RoHS Directive 2002/95/EC Lead (Pb)-free SiHP22N60S-E3
• Improved trr/Qrr
• Compliant to RoHS Directive 2002/95/EC
S
• Improved Gate
ORDERING Charge
INFORMATION
D S FEATURES
G ABSOLUTE SUMMARY
PRODUCTMAXIMUM G
RATINGS TC = 25 °C, unless High Power
•otherwise Dissipation Capability
noted
G D S Package TO-247
N-Channel S
MOSFET • High EAR Capability
VDS at TJ max. (V)
PARAMETER 650 • Compliant
SYMBOL 2002/95/EC
to RoHS Directive LIMIT UNIT
N-Channel MOSFET S • Lower Figure-of-Merit
Drain-Source
RDS(on) (Ω)Voltage D VGS = 10 V 0.190 Lead (Pb)-freeVDS Ron x600
Qg SiHG22N60S-E3
G V
Gate-Source (nC)
Qg (Max.)Voltage 98 S • 100 % Avalanche
VGS Tested ± 20
ORDERING INFORMATION
ORDERING INFORMATION Qgs (nC) 17 22
TC = 25 •°CHigh Peak Current Capability SiHB22N60S
Package TO-220 FULLPAK Continuous Drain Currenta N-Channel
V MOSFET
at 10 V
Qgd (nC) 25 GS ID
Package
Lead (Pb)-free TO-220
SiHF22N60S-E3 TC = 100 °C 13 A
• dV/dt Ruggedness Vishay Siliconix
Lead (Pb)-free SiHP22N60S-E3 Configuration
Pulsed Drain Currentb Single IDM 65
ORDERING
Linear INFORMATION
Derating Factor
• Effective Coss Specified
TO-220 2 W/°C
Package
Single Pulse Avalanche Energy c D
Power • Improved
TO-247
MOSFET E Transconductance
690
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted TO-220 FULLPAK AS
mJ
noted Lead (Pb)-free
Repetitive Avalanche Energyb SiHG22N60S-E3EAR
• Improved trr/Qrr 25
PARAMETER SYMBOL
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise LIMIT UNIT
PARAMETER
Drain-Source Voltage SYMBOL
VDS LIMIT
600 UNIT Maximum Power Dissipation TO-220 PD 250 W
• Improved
ORDERING Gate Charge
INFORMATION
V Peak Diode Recovery dV/dtd FEATURES dV/dt 7.3 V/ns
Gate-Source Voltage
Drain-SourceVoltage DS
VVGS ±600
20 PRODUCT SUMMARY
V • High Power
noted Dissipation Capability
Gate-Source Voltage TC = 25 °C VGS ± 20
22
ABSOLUTE
Operating JunctionMAXIMUM RATINGS
and Storage Temperature Range
G TC = 25 °C, unless otherwise
Package J, Tstg
• High EARTCapability 150
- 55 to + TO-220 FULLPAK
Continuous Drain Currenta VDS at TJ max. (V) 650 °C
VGS at 10 V ID PARAMETER
Soldering Recommendations (Peak Temperature)e for 10 s • Compliant
SYMBOL to RoHS Directive
LIMIT
3002002/95/EC UNIT
25 °C
T TC= =100 °C 22
13 A • Lower Figure-of-Merit Ron x Qg
Continuous Drain Currenta VGS at 10 V C ID RDS(on) (Ω) VGS = 10 V 0.190
TC = 100 °C 13 A Drain-Source Voltage
Notes Lead (Pb)-freeVDS 600 SiHF22N60S-E3
Pulsed Drain Currentb IDM 65 Qg (Max.) (nC) 98 • 100 % Avalanche Tested V
Drain Current IDM Limited by maximum
a. Gate-Source Voltage junction temperature. S VGS ± 20
Linear
PulsedDerating Factorb 265 W/°C
b. Q
Repetitive
gs (nC) rating; pulse width limited 17 junction temperature.
G D Sby maximum T =• High
25 °C Peak Current Capability 22
Derating TO-220 2 W/°C C
Single
LinearPulse Avalanche
Factor Energyc EAS 690 Q = 50 V,Drain
c. Continuous
DD(nC)
Vgd Current
starting TJ = a25 °C, L = 13.8 mH,25
N-ChannelatMOSFET
Rg = 25VΩ, = 10
GSIAS 10 V A. ID
b c mJ TC = 100
• dV/dt
°C Ruggedness 13 A
Single Pulse
Repetitive Avalanche
Avalanche Energy
Energy AS
EEAR 690
25 d. Configuration ≤ 150 °C.
ISD ≤ 22 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ Single
mJ b IDM 65
Maximum Avalanche
RepetitivePower Energyb
Dissipation PEDAR 25
250 W e. Pulsed
1.6 mmDrain
from Current
case. • Effective Coss Specified
ORDERING
Linear INFORMATION
Derating Factor TO-247 2 W/°C
Maximum
Peak DiodePower Dissipation
Recovery dV/dtd TO-220 PD
dV/dt 250
7.3 W
V/ns D
Package D2PAK (TO-263) Improved
• TO-220 Transconductance
FULLPAK
Peak Diode Recovery d V/ns Single Pulse Avalanche Energyc EAS 690
Operating Junction and dV/dt
Storage Temperature Range TJdV/dt
, Tstg - 55 to7.3
+ 150 mJ
e
°C Lead (Pb)-free
Repetitive Avalanche Energyb • SiHF22N60S-E3
Improved trrE/Q
ARrr 25
Soldering Junction and Storage
OperatingRecommendations Temperature
(Peak Range
Temperature) for 10 s TJ, Tstg to + 150
- 55300
°C Maximum Power Dissipation TO-247
• Improved Gate
PD Charge 250 W
Soldering Recommendations (Peak Temperature)e
Notes for 10 s 300 ORDERING INFORMATION
Peak Diode Recovery dV/dt d dV/dt 7.3 V/ns
Limited by maximum junction temperature.
a.Notes * Pb containing terminations are not RoHS compliant, exemptions may apply• High Power Dissipation Capability
G
b.a. Repetitive rating; pulse width limited
Limited by maximum junction temperature.by maximum junction temperature. ABSOLUTE
Operating MAXIMUM
Junction and RATINGS
Storage Temperature unless otherwise
Range TC = 25 °C,Package TJ, Tnoted
stg 150
- 55 to + D 2PAK (TO-263)
Document Number: 91373 • Compliant to RoHS Directive 2002/95/EC °C
www.vishay.com
c.b. VRepetitive starting
DD = 50 V,rating; pulse
TJ =width L = 13.8
25 °C,limited mH, Rg = 25
by maximum junction = 10 A.
Ω, IAStemperature. PARAMETER
Soldering
S09-2398-Rev.Recommendations
B,
D 16-Nov-09 (Peak Temperature)e for 10 s SYMBOL 300LIMIT UNIT1
G
d.c. ISD
VDD≤ 22
= 50 dI/dt
A,V, starting
≤ 340TA/µs, DD ≤
J = 25V°C, LV=DS13.8 ≤ 150
, TJmH, Rg°C.
= 25 Ω, IAS = 10 A. Voltage Lead (Pb)-free VDS 600
SiHB22N60S-E3
NotesDrain-Source S V
e.d. 1.6 ≤ 22from
ISDmm case.
A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. S
a. Limited by maximum
Gate-Source junction temperature.
Voltage VGS ± 20
e. 1.6 mm from case. b. Repetitive rating; pulse width limited by maximum junction
N-Channel MOSFET
temperature. T = 25 °C
C 22
Continuous
c. VDD Drain Current
= 50 V, starting GS =
TJ = 25 a°C, L = 13.8 mH, Rg = 25 Ω,VIAS at10 V
10A. ID
TC = 100 °C 13 A
d. ISD ≤ 22 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
Pulsed Drain Current b I 65
e. 1.6 mm from case. DM
ORDERING INFORMATION
Linear Derating Factor 2 W/°C
* Pb containing terminations are not RoHS compliant, exemptions may apply Package
Single Pulse Avalanche Energyc D2PAK (TO-263) E 690
AS
* Pb containing terminations are not RoHS compliant, exemptions may apply Lead mJ
Document Number: 91394 www.vishay.com Repetitive
(Pb)-freeAvalanche Energyb SiHB22N60S-E3 E
AR 25
SPending-Rev. A, 10-Dec-09
Document Number: 91373 Work-in-Progress 1
www.vishay.com Maximum Power Dissipation PD 250 W
S09-2398-Rev. B, 16-Nov-09 1 d
Peak Diode
* Pb containing Recovery dV/dt
terminations are not RoHS compliant, exemptions may apply dV/dt 7.3 V/ns
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Document Number: 91393 www.vishay.com
Revision 10-Dec-09

PARAMETER
Soldering Recommendations (Peak Temperature) e for 10 s SYMBOL LIMIT300 UNIT°C
S09-2398-Rev. B, 16-Nov-09 1
Drain-Source Voltage VDS 600
Notes V
DISCLAIMER All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all personsGate-Source acting
a. on its
Limited Voltage
by or their behalf
maximum (collectively,
junction “Vishay”), disclaim any
temperature. VGS ± 20
and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising b.
outRepetitive or application
of the userating; pulse width any product
oflimited described
by maximum herein
junction temperature.
or TC = 25 °C 22
Continuous Drain a at ID
of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of c. purchase,
VDD = 50 V,including
Currentbut
starting limited
25 °C,
TJ =not to the
L = 13.8 warranty
mH, GSexpressed
Rg =V25 Ω, 10
IASV= 10TCA.= 100 °C 13 A
therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct 22 A, dI/dt
d. ISDof≤ Vishay. 340 A/µs, shown
The≤b products VDD ≤ Vherein ≤ 150
DS, TJ are designed for
not°C.
Pulsed Drain Current IDM 65
use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use ine.such applications
1.6 mm from case.do so entirely at their own risk and agree to
fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed D2PAK
Linear Derating Factor for such applications. Product names and 2 W/°C
markings noted herein may be trademarks of their respective owners. (TO-263)
Single Pulse Avalanche Energyc EAS 690
mJ
For technical questions, contact hvm@vishay.com Repetitive Avalanche Energyb EAR 25
D2PAK
Maximum Power Dissipation PD 250 W
VMN-PT0192-1002
* Pb containing terminations are not RoHS compliant, exemptions may (TO-263)
apply
Peak Diode Recovery dV/dtd dV/dt 7.3 V/ns