100 Top Electronic Devices and Circuits Questions and Answers PDF Electronic Devices and Circuits Questions

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TOP ELECTRONIC DEVICES and CIRCUITS Questions and
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100 TOP ELECTRONIC DEVICES

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Posted on August 19, 2018 by engineer 1 Comment Engine
F
ELECTRONIC DEVICES and CIRCUITS Questions 795 follow
:-
1. At room temperature the current in an intrinsic
semiconductor is due to
A. holes
B. electrons
C. ions
D. holes and electrons
Answer: D
2. Work function is the maximum energy required by the

fastest electron at 0 K to escape from the metal surface.
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11/24/2018 100 TOP ELECTRONIC DEVICES and CIRCUITS Questions and Answers pdf ELECTRONIC DEVICES and CIRCUITS Questions
A. True
B. False
Answer: B
3. The most commonly used semiconductor material is
A. silicon
B. germanium
C. mixture of silicon and germanium
D. none of the above
Answer: A
4. In which of these is reverse recovery time nearly zero?
A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode
Answer: C
5. A transistor has a current gain of 0.99 in the CB mode. Its

current gain in the CC mode is
A. 100
B. 99
C. 1.01
D. 0.99
Answer: A
6. The amount of photoelectric emission current depends

on
A. frequency of incident radiation

B. intensity of incident radiation
C. both frequency and intensity of incident radiation

Answer: B
7. Assertion (A): A p-n junction has high resistance in

reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width
of depletion layer increases.
A. Both A and R are true and R is correct explanation of A

B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: A
8. Voltage series feedback (Also called series-shunt

feedback) results in
A. increase in both I/P and O/P impedances

B. decrease in both I/P and O/P impedances
C. increase in I/P impedance and decrease in O/P impedance
D. decrease in I/P impedance and increase in O/P impedance
Answer: C
9. How many free electrons does a p type semiconductor

has?
A. only those produced by thermal energy

B. only those produced by doping
C. those produced by doping as well as thermal energy
D. any of the above
Answer: A
10. Which of the following has highest resistivity?

A. Mica
B. Paraffin wax
C. Air
D. Mineral oil
Answer: C
11. Assertion (A): In p-n-p transistor collector current is

termed negative.
Reason (R): In p-n-p transistor holes are majority carriers.

Answer: B
12. The sensitivity of human eyes is maximum at
A. white portion of spectrum

B. green portion of spectrum
C. red portion of spectrum
D. violet portion of spectrum
Answer: B
13. In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or forward bias
Answer: B
14. An intrinsic silicon sample has 1 million free electrons

at room temperature. As the temperature is increased
A. the number of free electrons increases

B. the number of free electrons increases but the number of holes
decreases
C. the number of free electrons and holes increase by the same
amount
D. the number of free electrons and holes increase but not by the same
amount
Answer: C
15. What is the necessary a.c. input power from the

transformer secondary used in a half wave rectifier to
deliver 500 W of d.c. power to the load?
A. 1232 W
B. 848 W
C. 616 W
D. 308 W
Answer: A
16. In a semi-conductor diode, the barrier offers opposition

to
A. holes in P-region only

B. free electrons in N-region only
C. majority carriers in both regions
D. majority as well as minority carriers in both regions
Answer: C
17. In a half wave rectifier, the load current flows
A. only for the positive half cycle of the input signal

B. only for the negative half cycle of the input signal
C. for full cycle
D. for less than fourth cycle
Answer: A
18. For a NPN bipolar transistor, what is the main stream of

current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
Answer: B
19. Assertion (A): A VMOS can handle much larger current

than other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.

Answer: C
20. In monolithic ICs, all the components are fabricated by
A. diffusion process
B. oxidation
C. evaporation
D. none
Answer: A
21. Which one of the following is not a characteristic of a

ferroelectric material?
A. High dielectric constant

B. No hysteresis
C. Ferroelectric characteristic only above the curie point
D. Electric dipole moment
Answer: C
22. In the sale of diamonds the unit of weight is carat. One

carat is equal to
A. 100 mg
B. 150 mg
C. 200 mg
D. 500 mg
Answer: C
23. Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is nearly
constant.

Answer: A
24. Permalloy is
A. a variety of stainless steel

B. a polymer
C. a conon-ferrous alloy used in aircraft industry
D. a nickel an iron alloy having high permeability
Answer: D
25. Which of the following could be the maximum current

rating of junction diode by 126?
A. 1 A
B. 10 A
C. 20 A
D. 100 A
Answer: A
ELECTRONIC DEVICES and CIRCUITS Questions and Answers ::

26. Each cell of a static Random Access memory contains
A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor
C. 2 MOS transistor, 4 capacitor
D. 1 MOS transistor and 1 capacitor
Answer: A
27. An electron in the conduction band
A. has higher energy than the electron in the valence band

B. has lower energy than the electron in the valence band
C. loses its charge easily
D. jumps to the top of the crystal
Answer: A
28. The dynamic resistance of a forward biased p-n diode
A. varies inversely with current

B. varies directly with current
C. is constant
D. is either constant or varies directly with current
Answer: A
29. A thermistor is a
A. thermocouple
B. thermometer
C. miniature resistance
D. heat sensitive explosive
Answer: C
30. When diodes are connected in series to increase voltage

rating the peak inverse voltage per junction
A. should not exceed half the breakdown voltage

B. should not exceed the breakdown voltage
C. should not exceed one third the breakdown voltage
D. may be equal to or less than breakdown voltage
Answer: C
31. Hall effect is observed in a specimen when it is carrying

current and is placed in a magnetic field. The resultant
electric field inside the specimen is
A. normal to both current and magnetic field

B. in the direction of current
C. antiparallel to magnetic field
D. in arbitrary direction
Answer: A
32. In an ideal diode there is no breakdown, no

__________ current, and no forward __________ drop.
A. reverse, voltage
B. forward, current
C. forward, voltage
D. reverse, current
Answer: A
33. Silicon is not suitable for fabrication of light emitting

diodes because it is
A. an indirect band gap semiconductor

B. direct band gap semiconductor
C. wideband gap semiconductor

D. narrowband gap semiconductor
Answer: A
34. MOSFET can be used as a
A. current controlled capacitor

B. voltage controlled capacitor
C. current controlled inductor
D. voltage controlled inductor
Answer: B
35. Power diodes are generally
A. silicon diodes
B. germanium diodes
C. either of the above
Answer: A
36. The depletion layer width of Junction
A. decreases with light doping

B. is independent of applied voltage
C. is increased under reverse bias
D. increases with heavy doping
Answer: C
37. Forbidden energy gap in germanium at 0 K is about
A. 10 eV
B. 5 eV
C. 2 eV
D. 0.78 eV
Answer: D
38. Light dependent resistors are
A. highly doped semiconductor

B. intrinsic semiconductor
C. lightly doped semiconductor
D. either (a) or (c)
Answer: C
39. Fermi level is the amount of energy in which
A. a hole can have at room temperature

B. an electron can have at room temperature
C. must be given to an electron move to conduction band
Answer: C
40. When avalanche breakdown occurs covalent bonds are

not affected.
A. True
B. False
Answer: B
41. An ideal Op-amp is an ideal
A. voltage controlled current source

B. voltage controlled voltage source
C. current controlled current source
D. current controlled voltage source
Answer: B
42. Free electrons exist in
A. first band
B. second band
C. third band
D. conduction band
Answer: D
43. As compared to bipolar junction transistor, a FET
A. is less noisy
B. has better thermal stability
C. has higher input resistance
D. all of the above
Answer: D
44. For a P-N diode, the number of minority carriers

crossing the junction depends on
A. forward bias voltage

B. potential barrier
C. rate of thermal generation of electron hole pairs
Answer: C
45. Which variety of copper has the best conductivity?
A. Pure annealed copper

B. Hard drawn copper
C. Induction hardened copper
D. Copper containing traces of silicon
Answer: A
46. The output, V-I characteristics of an Enhancement type

MOSFET has
A. only an ohmic region

B. only a saturation region
C. an ohmic region at low voltage value followed by a saturation
region at higher voltages
D. an ohmic region at large voltage values preceded by a saturation
region at lower voltages
Answer: C
47. Piezoelectric quartz crystal resonators find application

where
A. signal amplification is required

B. rectification of the signal is required
C. signal frequency control is required
D. modulation of signal is required
Answer: B
48. The forbidden energy gap between the valence band and
conduction band will be least in case of
A. metals
B. semiconductors
C. insulators
D. all of the above
Answer: A
49. If too large current passes through the diode
A. all electrons will leave

B. all holes will freeze
C. excessive heat may damage the diode
D. diode will emit light
Answer: C
50. In a bipolar transistor, the emitter base junction has

A. forward bias
B. reverse bias
C. zero bias
D. zero or reverse bias
Answer: A
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AUGUST 29, 2017 AT 4:00 PM
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11/24/2018 100 TOP ELECTRONIC DEVICES and CIRCUITS Questions and Answers pdf ELECTRONIC DEVICES and CIRCUITS

and CIRCUITS Questions

Engineering interview questions,Mcqs,Objective Questions,Class Notes,Seminor

Home » ELECTRONIC DEVICES and CIRCUITS Questions » 100

100 TOP ELECTRONIC DEVICES

Posted on August 19, 2018 by engineer 1 Comment Engine

2. Work function is the maximum energy required by the

3. The most commonly used semiconductor material is

4. In which of these is reverse recovery time nearly zero?

5. A transistor has a current gain of 0.99 in the CB mode. Its

6. The amount of photoelectric emission current depends

A. frequency of incident radiation

C. both frequency and intensity of incident radiation

7. Assertion (A): A p-n junction has high resistance in

A. Both A and R are true and R is correct explanation of A

8. Voltage series feedback (Also called series-shunt

A. increase in both I/P and O/P impedances

9. How many free electrons does a p type semiconductor

A. only those produced by thermal energy

10. Which of the following has highest resistivity?

11. Assertion (A): In p-n-p transistor collector current is

Reason (R): In p-n-p transistor holes are majority carriers.

A. Both A and R are true and R is correct explanation of A

12. The sensitivity of human eyes is maximum at

A. white portion of spectrum

13. In a bipolar transistor, the base collector junction has

14. An intrinsic silicon sample has 1 million free electrons

A. the number of free electrons increases

15. What is the necessary a.c. input power from the

16. In a semi-conductor diode, the barrier offers opposition

A. holes in P-region only

17. In a half wave rectifier, the load current flows

A. only for the positive half cycle of the input signal

18. For a NPN bipolar transistor, what is the main stream of

19. Assertion (A): A VMOS can handle much larger current

Reason (R): In a VMOS the conducting channel is very narrow.

A. Both A and R are true and R is correct explanation of A

20. In monolithic ICs, all the components are fabricated by

21. Which one of the following is not a characteristic of a

A. High dielectric constant

22. In the sale of diamonds the unit of weight is carat. One

23. Assertion (A): A JFET can be used as a current source.

A. Both A and R are true and R is correct explanation of A

A. a variety of stainless steel

25. Which of the following could be the maximum current

ELECTRONIC DEVICES and CIRCUITS Questions and Answers ::

27. An electron in the conduction band

A. has higher energy than the electron in the valence band

28. The dynamic resistance of a forward biased p-n diode

A. varies inversely with current

30. When diodes are connected in series to increase voltage

A. should not exceed half the breakdown voltage

31. Hall effect is observed in a specimen when it is carrying

A. normal to both current and magnetic field

32. In an ideal diode there is no breakdown, no

33. Silicon is not suitable for fabrication of light emitting

A. an indirect band gap semiconductor

C. wideband gap semiconductor

34. MOSFET can be used as a

A. current controlled capacitor

35. Power diodes are generally

36. The depletion layer width of Junction

A. decreases with light doping

37. Forbidden energy gap in germanium at 0 K is about