AO4447A

30V P-Channel MOSFET

General Description Product Summary

• Trench Power MOSFET technology VDS -30V

• Low RDS(ON) ID (at VGS=-10V) -18.5A
• ESD Protected RDS(ON) (at VGS=-10V) < 5.8mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS=-4.5V) < 8.2mΩ

Typical ESD protection HBM Class 3B

Applications 100% UIS Tested

• System/Load Switch
• Battery Switch
• USB-PD Load Switch

SOIC-8
D
Top View Bottom View Top View
D
D
1
D 8

D 2 7

3 6 G
4 5
G
S S
S
S

Orderable Part Number Package Type Form Minimum Order Quantity

AO4447A SO-8 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C -18.5
ID
Current TA=70°C -14.5 A
Pulsed Drain Current C IDM -74
Avalanche Current C IAS 54 A
C
Avalanche energy L=0.1mH EAS 146 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

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 AO4447A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±16V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -1.2 -1.7 -2.2 V
VGS=-10V, ID=-18.5A 4.7 5.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.6 8.2
VGS=-4.5V, ID=-16A 6.3 8.2 mΩ
gFS Forward Transconductance VDS=-5V, ID=-18.5A 65 S
VSD Diode Forward Voltage IS=-1A, VGS=0V -0.66 -1 V
IS Maximum Body-Diode Continuous Current -4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 5020 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 815 pF
Crss Reverse Transfer Capacitance 615 pF
Rg Gate resistance f=1MHz 125 250 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 93 130 nC
Qg(4.5V) Total Gate Charge 46 nC
VGS=-10V, VDS=-15V, ID=-18.5A
Qgs Gate Source Charge 14 nC
Qgd Gate Drain Charge 21 nC
tD(on) Turn-On DelayTime 180 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.8Ω, 280 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 1400 ns
tf Turn-Off Fall Time 830 ns
trr Body Diode Reverse Recovery Time IF=-18.5A, di/dt=500A/µs 17 ns
Qrr Body Diode Reverse Recovery Charge IF=-18.5A, di/dt=500A/µs 53 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4447A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 80
-10V -4V -3.5V VDS=-5V

60 -4.5V 60
-ID (A)

-ID (A)
40 40 125°C
-3V

20 20 25°C
VGS=-2.5V

0 0
0 1 2 3 4 5 1 2 3 4 5

-VDS (Volts) -VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.6

Normalized On-Resistance
8 VGS=-4.5V
1.4 VGS=-10V
ID=-18.5A
RDS(ON) (mΩ)

6
1.2
4
VGS=-4.5V
VGS=-10V ID=-16A
1
2

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

-ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

20 1.0E+01
ID=-18.5A

1.0E+00
15
1.0E-01 125°C
RDS(ON) (mΩ)

-IS (A)

10 125°C 1.0E-02

1.0E-03 25°C
5
1.0E-04
25°C

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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 AO4447A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 7000
VDS=-15V
ID=-18.5A 6000
8 Ciss
5000

Capacitance (pF)
-VGS (Volts)

6
4000

4 3000

2000
2 Coss
1000
Crss
0 0
0 20 40 60 80 100 0 5 10 15 20 25 30

Qg (nC) -VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
1000
TJ(Max)=150°C
10µs TA=25°C
100.0
10µs
RDS(ON)
limited 100
-ID (Amps)

10.0
Power (W)

1ms

10ms
1.0
100ms
10
TJ(Max)=150°C
0.1 TA=25°C 10s
DC

0.0 1
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
-VDS (Volts) Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W

0.1

PDM
0.01
Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4447A

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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