TEST CODE: 101

Head Office : Sree Sindhi Guru Sangat Sabha Association, # 4-1-1236/1/A, King Koti, Abids, Hyderabad – 500001

Instructions to the Candidate to upload answer scripts:

Instructions
1. Answers should be written in plain A4 size papers only.
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Answers must be clearly visible; otherwise answers will not be evaluated.
5. In first page of answer sheet student should write following details :
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Test Code :
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are eligible for prize money.
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evaluated.
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9. Detailed solutions of each test will be uploaded after two days of test date.
10. For your reference QCAB booklet also attached.
 TEST CODE: 101

Head Office : Sree Sindhi Guru Sangat Sabha Association, # 4-1-1236/1/A, King Koti, Abids, Hyderabad – 500001

ESE – 2018 Mains Test Series

Electronics & Telecommunication Engineering
Test – 1 on Network Theory + Basic Electronics Engineering (Paper – I)

Time Allowed: 3 Hours Maximum Marks: 300

INSTRUCTIONS
Please read each of the following instructions carefully before attempting questions:

Answers must be written in ENGLISH only.

There are EIGHT questions divided in TWO sections.
Candidate has to attempt FIVE questions in all.
Questions no. 1 and 5 are compulsory and out of the remaining, THREE are to be attempted choosing
at least ONE question from each section.
The number of marks carried by a question / part is indicated against it.
Wherever any assumptions are made for answering a question, they must be clearly indicated.
Diagrams / figures, wherever required, shall be drawn in the space provided for answering the question
itself.
Unless otherwise mentioned, symbols and notations carry their usual standard meanings.
Candidates should attempt all questions in the space prescribed under each question in the Question-
cum-Answer (QCA) Booklet. Any answer written outside the space allotted may not be given credit.
Attempts of questions shall be counted in sequential order. Unless struck off, attempt of a question shall
be counted even if attempted partly. Any page or portion of the page left blank in the Question-cum-
Answer Booklet must be clearly struck off.

Values of constants which may be required:

Electron charge = –1.610–19 Coulomb
Free space permeability = 4  10–7 Henry/m
Free space permittivity = (1/36)  10–9 Farad/m
Velocity of light in free space = 3108 m/sec
Boltzmann constant = 1.38 10–23 J/K
Planck’s constant = 6.626  10–34 J-s
 :2: ESE-2018 Mains Test Series

SECTION-A
01.
(a) In the coupled circuit of below figure, find the input admittance Y1 = I1/V1 and determine the
current i1(t) for 1 = 2 2 cos t.
(12 M)
i1 M=1 i2
H
1H 2H
1 1
1F

(b) For the circuit shown below |Vt| = 1V,  = 0,  = 0, nCox = 50A/V2, L = 1m, and W = 10m.
Find V2 and I2. How do these values change if Q3 and Q4 are made to have W = 100m?
(12 M)
+5V

Q4 Q2
I2
V2
Q3 Q1

(c) Find current i(t) in the network shown below (12 M)

t=0
1

i(t) 1H
10 V +- +
5V 1F
–

(d) Using Thevenin’s theorem determine the current in the branch AB in the circuit given below.
(12 M)
8
A
2A 10
24V + 20 8

36V B

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 :3: Electronics & Telecommunication Engineering
(e) Fig. shows the details of a portion of a d.c. network. Evaluate the voltage V0 (12 M)
N1
+
1 3
2A
Vo
2 4V
3A
1 1
N2 –
Fig.

02.
(a) A constant voltage of frequency, 1 MHz is applied to a lossy inductor (r in series with L), in series
with a variable capacitor C. The current drawn is maximum, when C = 400 pF; while current is
reduced to (1/ 2 ) of the above value, when C = 450 pF.
(i) Find the values of r and L. (10 M)
(ii) Calculate the quality factor of the coil (5 M)
(iii) Calculate bandwidth. (5 M)
r L

+
V C
–
f =1 MHz
Circuit diagram

(b)
(i) What is meant by the reverse-recovery time trr? Is it due to the majority carriers or the
minority carriers ? (15 M)
(ii) The values of Nc and Nv at 300K for gallium arsenide are 4.71017 cm–3 and 7.01018 cm–3,
respectively. Both Nc and Nv vary as T3/2. Assume the bandgap energy of gallium arsenide is
1.42eV and does not vary with temperature over this range. Calculate the intrinsic carrier
concentration in gallium arsenide at T = 300K and at T = 450K. (5 M)

(c)
(i) State and prove Milliman’s theorem. (10 M)
(ii) For the network shown below, determine RL which will receive maximum power.

I1 5 +  RL

+ 10I1 1
15V 10A +
 10V (10 M)


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 :4: ESE-2018 Mains Test Series
03.
(a) (i) Consider the circuit of fig: (i). Let Q1 and Q2 have Vt = 0.6V, nCox = 200A/V2, L1 = L2 =
0.8m, W1= 8m and  = 0. VDD =3V

20k R2 R
Fig: (i) Q2 Q1

(1) Find the value of R required to establish a current of 0.2mA in Q1.

(Here assume W2 as 8m) (7 M)

(2) Find W2 and a new value of R2 so that Q2 operates in the saturation region with a current
of 0.5mA and a drain voltage of 1V (7 M)

(ii) Define fe, fb and fT for a BJT briefly explain (6 M)

(b) Given the effective masses of electrons and holes in silicon, germanium and gallium arsenide,
calculate the position of the intrinsic Fermi energy level with respect to the center of the bandgap
for each semiconductor at T = 300K. (For silicon: m*p  0.56 m 0 , m*n  1.08m0 , For germanium:
m*p  0.37 m 0 , m*n  0.55m0 , For GaAs: m*p  0.48m 0 , m*n  0.067 m0 ) (20 M)

(c)
(i)
I1 1 1 1 1 I2

V1 1 1 V2

Two – T networks are connected in cascade as shown in the above figure. Find a single T
equivalent for the network. (10 M)

(ii) For the network shown in Fig.

Determine the Admittance parameters (10 M)

6

I1 I2
3 3
+ +

V1 3 V2

Fig.

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 :5: Electronics & Telecommunication Engineering
04. (a)
(i) A p-type silicon sample is placed in a magnetic field as shown in Fig. The applied electric field
is –750 ax V/m. The electron and hole mobilities are 0.14 and 0.05 m 2/V-s respectively at the
operating temperature. Find the magnitudes of
(1) the voltage across the sample length (3 M)
(2) the drift velocity (3 M)
z
B = 0.05az T

1.25cm
0.8m
m
x 0.9cm
(3) the transverse force per coulomb of moving charge due to B (3 M)
(4) the transverse electric field intensity (3 M)
(5) the Hall voltage (3 M)

(ii) Bring out the important differences between the following devices:
PN junction diode and Schottky barrier diode (5 M)

(b) A coil, having a resistance of 15  and an inductance of 0.75 H, is connected in series with a
capacitor (fig a). The circuit draws maximum current, when a voltage of 200 V at 50 Hz is applied.
A second capacitor is then connected in parallel to the circuit (fig b). What should be its value, such
that the combination acts like a non-inductive resistance, with the same voltage (200 V) at 100 Hz?
Calculate the current drawn by the two circuits. (20 M)

R L I R L

+ + I2 I1
V=200 V C1 V=200 V C2 C1
– –
f1 =50 Hz f2 =100 Hz
(a) Circuit (b) Circuit
diagram diagram
(c) The silicon transistor as connected in figure below has a minimum value of hfb of 30.
(20 M)
+12V
Ic
2.2k
C V0
(i) If input voltage Vi = 12 volts, Is Ib
show that the transistor is in Saturation. Vi Q
(ii) If input voltage Vi = 0.4 volt, 15 k
show that the transistor is in cut-off. 100k E

-12V

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 :6: ESE-2018 Mains Test Series

SECTION-B
05.
(a) The circuit shown in fig. uses a transistor hfe = 50, hre = 1k, and hib = 20. The circuit lower
cut-off frequency (f1) is to be 100Hz.
Calculate the following quantities:
(i) The required capacitance for C2 (3 M)
(ii) Av with the emitter terminal completely bypassed to ground (3 M)
(iii) Av when f =100Hz, using the C2 value selected (3 M)
(iv) Av when f= 100Hz and when C2 is (incorrectly) selected as XC2 = RE/10. (3 M)

R1 RC
39k 3.3k

Q1
C1
R2 RE
10k 3.3k C2

(b) Find Current I Using Mesh Analysis (12 M)

3 j 4

j 3 I
50450 +- j5
– j 8
V

(c) Explain how Hall effect can be used to find the carrier concentration in a semi-conductor. (12 M)
(d) In fig. (i), switch S1 is closed at t = 0, switch S2 is opened at t = 4 ms. Obtain i for t > 0.
(12 M)
t=0 50 
S1
100  t = 4ms S2
i
100 V +

0.1 H

fig. (i)

(e) A photocathode is illuminated with radiation of wave length 500nm. The cathode has a work-
function of 1.2eV. Calculate the anode voltage required to produced zero anode current. When
the anode voltage is +90V, find the velocity of the electrons at the anode if the cathode is
illuminated with radiation of wavelength 250 nm. (12 M)

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 :7: Electronics & Telecommunication Engineering
06. (a) What are the two main types of field-effect transistors ? Give the points of superiority of FETs
over a conventional transistor and the points of disadvantages of FET over conventional
transistor? (20 M)
+
(b) In the circuit of Figure. when the switch is closed at t = 0, it is noticed that i(0 ) = 10mA and
Vab(t) = 0, t0 sec. Assuming zero initial current for inductor and zero initial charge for capacitor,
find the values of R1 and L
i S

R1 L
5V a b

C=5F R2=200

Fig (20 M)
.
(c) (i) Define Electrical properties of semiconductor materials briefly. (15 M)
(ii) Find the mobility of electrons in copper assuming that each atom contributes one free electron
for conduction. (Resistivity of copper = 1.710–6 ohm-cm, atomic weight = 63.54, density =
8.96 gm/cc. Avogadro’s number = 6.0251023 and electronic charge = 1.610–19 coulomb).
(5 M)

07.
(a) Two passive two-port networks are connected in cascade as shown in figure. A voltage source is
connected at port 1.
I1 I2 I3
+ + +
V1 ~ Two-port Two-port
V2 V3
 Network-1 Network-2
Given: V1 = A1V2 + B1I2  
Port-1 Port-2 Port-3
I1 = C1V2 + D1I2
V2 = A2V3 + B2I3
I2 = C2V3 + D2I3
A1, B1, C1, D1, A2, B2, C2 and D2 are the generalized circuit constants.
Draw the Thevenin equivalent circuit with respect to port 3?
(20 M)
(b) For the PMOS transistor in the circuit shown in figure, kp  8A / V 2 , W/L = 25, and Vtp  1V .
For I = 100A, find the voltages VSD and VSG for R = 0, 10k, 30k, and 100k. For what
value of R is VSD = VSG? VSD = VSG/2 ? VSD = VSG/10 ?
+10V
VSG + +
– V
– SD
R

I
(20 M)
Figure
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 :8: ESE-2018 Mains Test Series
(c) Z-parameters of the two-port network N in below figure (i) are Z11 = 4s, Z12 = Z21 = 3s and
Z22 = 9s. (all are in krad/s)
(i) Replace N by its T-equivalent (10 M)
(ii) Use part (a) to find input current i1 for s = cos 1000t (V). (10 M)
I1 A B I2
+ +
V1 N V2
– –
– –
s + 12 k

C
6 k

fig(i)
08.
(a) A step-graded germanium diode has a resistivity of 2  -cm on the p side and 1  -cm on the
n side. Calculate the height of the potential barrier.
For germanium p = 1800 cm2/V-s and
μ n = 3800 cm2/V-s and ni = 2.5  103/cm2 at 3000K. Prove formula used. (20 M)
(b) For the S-domain circuit shown in the figure, find:
(i) the transfer function H(s) = V0/V1, (10 M)
(ii) the impulse response, (5 M)
(iii) the response when vi(t) = u(t) V (5 M)
1 a S

+
Vi +
– 1 1 V0
–

b
(c) Explain, what you understand by voltage-dependent current source and current dependent current
source. For the circuit shown in Fig. determine the currents i1, i2 and i3 using nodal analysis.
4V (20 M)
i1 2 ix
+ + 

24V 6 8 3A

i2 i3

Fig
.

Detailed solutions for this test will be available on our website on 02-04-2018 at 6.00 pm.
http://www.aceenggacademy.com/ese2018-mains-test-solutions/

This test results will be displayed at our centres on 13-04-2018 at 6.00 pm.

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 Head Office : Sree Sindhi Guru Sangat Sabha Association, # 4-1-1236/1/A, King Koti, Abids, Hyderabad – 500001

ESE-2018 MAINS TEST SERIES

Question Cum Answer Booklet (QCAB)
Electronics & Telecommunication Engineering Test-1 Paper-I
Time Allowed: 3 Hours Maximum Marks: 300

101 31-03-2018

INSTRUCTIONS TO CANDIDATES:
 This Question-cum- Answer (QCA) Booklet contains 68 pages. Immediately on receipt of
booklet, please check that this QCA booklet does not have any misprint or torn or missing
pages or items, etc. If so, get it replaced by a fresh QCA booklet.
 Candidates must read the instructions on this page and the following pages carefully before
attempting the paper.
 Candidates should attempt all questions strictly in accordance with the specified instructions
and in the space prescribed under each question in the booklet. Any answer written outside
the space allotted may not be given credit.
 Question Paper in detachable form is available at the end of the QCA booklet and can be
removed and taken by the candidates after conclusion of the exam

For filling by Examiners only

Question No. Page No. Marks
1 3
Signature of the Invigilator
2 10

3 19

4 27
5 36 Signature of the Student

6 44 Marks Secured
7 52 after Scrutiny

8 59

Grand Total
::1::
 QUESTION PAPER SPECIFIC INSTRUCTIONS

Please read each of the following instructions carefully before attempting questions:

Answers must be written in ENGLISH only.

There are EIGHT questions divided in TWO sections.
Candidate has to attempt FIVE questions in all.
Questions no. 1 and 5 are compulsory and out of the remaining, THREE are to be attempted
choosing at least ONE question from each section.
The number of marks carried by a question / part is indicated against it.
Wherever any assumptions are made for answering a question, they must be clearly indicated.
Diagrams / figures, wherever required, shall be drawn in the space provided for answering the
question itself.
Unless otherwise mentioned, symbols and notations carry their usual standard meanings.
Candidates should attempt all questions in the space prescribed under each question in the
Question-cum-Answer (QCA) Booklet. Any answer written outside the space allotted may not be
given credit.
Attempts of questions shall be counted in sequential order. Unless struck off, attempt of a question
shall be counted even if attempted partly. Any page or portion of the page left blank in the
Question-cum-Answer Booklet must be clearly struck off.

Values of constants which may be required:

Electron charge = –1.610–19 Coulomb
Free space permeability = 4  10–7 Henry/m
Free space permittivity = (1/36)  10–9 Farad/m
Velocity of light in free space = 3108 m/sec
Boltzmann constant = 1.38 10–23 J/K
Planck’s constant = 6.626  10–34 J-s

DONT'S:
1. Do not write your Name or Roll number or Sr. No. of Question-Cum-Answer-Booklet anywhere inside this Booklet.
Do not sign the “Letter Writing” questions, if set in any paper by name, nor append your roll number to it.
2. Do not write anything other than the actual answers to the questions anywhere inside your Question-Cum-Answer-Booklet.
3. Do not tear off any leaves from your Question-Cum-Answer-Booklet. If you find any page missing, do not fail to notify the
Supervisor/invigilator.
4. Do not write anything on the Question Paper available in detachable form or admission certificate and write answers at the
specified space only.
5. Do not leave behind your Question-Cum-Answer-Booklet on your table unattended, it should be handed over to the
Invigilator after conclusion of the exam.

DO’S :

1. Read the instructions on the cover page and the instructions specific to this Question Paper mentioned on the next page of
this Booklet carefully and strictly follow them.
2. Write your Roll number and other particulars, in the space provided on the cover page of the Question-Cum-Answer-Booklet.
3. Write legibly and neatly. Do not write in bad/illegible handwriting.
4. For rough notes or calculations the last two blank pages of this booklet should be used. The rough notes should be crossed
through afterwards.
5. If you wish to cancel any work, draw your pen through it or write “Cancelled” across it, otherwise it may be valued.
6. Hand over your Question-Cum-Answer-Booklet personally to the invigilator before leaving the examination hall.
7. Candidates shall be required to attempt answer to the part/sub-part of a question strictly within the pre-defined space. Any
attempt outside the pre-defined space shall not be evaluated.

::2::
 SECTION-A (Q. No. 1 to 4) Candidates
must not
write on
01. (a) In the coupled circuit of below figure, find the input admittance Y1 = I1/V1 and
this margin
determine the current i1(t) for 1 = 2 2 cos t. (12 M)

i1 M=1 i2
H
1H 2H
1 1
1F

:: 3 ::
 Candidates
must not
write on
this margin

01.(b) For the circuit shown below |Vt| = 1V,  = 0,  = 0, nCox = 50A/V2, L = 1m, and
W = 10m. Find V2 and I2. How do these values change if Q3 and Q4 are made to
have W = 100m? (12 M)
+5V

Q4 Q2
I2
V2
Q3 Q1

:: 4 ::
 Candidates
must not
write on
this margin

:: 5 ::
01. (c) Find current i(t) in the network shown below (12 M) Candidates
must not
t=0 write on
1 this margin

i(t) 1H
10 V +- +
5V 1F
–

:: 6 ::
 Candidates
must not
write on
this margin

01. (d) Using Thevenin’s theorem determine the current in the branch AB in the circuit given
below.
(12 M)
8
A
2A 10
24V +

20 8
36V B

:: 7 ::
 Candidates
must not
write on
this margin

:: 8 ::
 Candidates
01. (e) Fig. shows the details of a portion of a d.c. network. Evaluate the voltage V0 must not
(12 M) write on
this margin
N1
+
1 3
2A
Vo
2 4 V
3A
1 1
N2 –
Fig.

:: 9 ::
 Candidates
must not
write on
this margin

02. (a) A constant voltage of frequency, 1 MHz is applied to a lossy inductor (r in series with L), in
series with a variable capacitor C. The current drawn is maximum, when C = 400 pF;
while current is reduced to (1/ 2 ) of the above value, when C = 450 pF.
(i) Find the values of r and L. (10 M)
(ii) Calculate the quality factor of the coil (5 M)
(iii) Calculate bandwidth. (5 M)
r L

+
V C
–
f =1 MHz
Circuit diagram

:: 10 ::
 Candidates
must not
write on
this margin

:: 11 ::
 Candidates
must not
write on
this margin

02. (b)
(i) What is meant by the reverse-recovery time trr? Is it due to the majority carriers or
the minority carriers ? (15 M)

:: 12 ::
 Candidates
must not
write on
this margin

:: 13 ::
 Candidates
must not
write on
this margin

(ii) The values of Nc and Nv at 300K for gallium arsenide are 4.71017 cm–3 and
7.01018 cm–3, respectively. Both Nc and Nv vary as T3/2. Assume the bandgap
energy of gallium arsenide is 1.42eV and does not vary with temperature over
this range. Calculate the intrinsic carrier concentration in gallium arsenide at
T = 300K and at T = 450K. (5 M)

:: 14 ::
 Candidates
must not
write on
this margin

02.(c) (i) State and prove Milliman’s theorem. (10 M)

:: 15 ::
 Candidates
must not
write on
this margin

:: 16 ::
 Candidates
must not
write on
this margin

(ii) For the network shown below, determine RL which will receive maximum power.

I1 5 +  RL

+ 10I1 1
15V 10A +
 10V
 (10 M)

:: 17 ::
 Candidates
must not
write on
this margin

:: 18 ::
03. (a) (i) Consider the circuit of fig: (i). Let Q1 and Q2 have Vt = 0.6V, nCox = 200A/V2, Candidates
L1 = L2 = 0.8m, W1= 8m and  = 0. must not
write on
VDD =3V this margin

20k R2 R
Fig: (i) Q2 Q1

(1) Find the value of R required to establish a current of 0.2mA in Q1.

(Here assume W2 as 8m) (7 M)

(2) Find W2 and a new value of R2 so that Q2 operates in the saturation region with
a current of 0.5mA and a drain voltage of 1V (7 M)

:: 19 ::
 Candidates
must not
write on
this margin

:: 20 ::
(ii) Define fe, fb and fT for a BJT briefly explain (6 M) Candidates
must not
write on
this margin

:: 21 ::
03. (b) Given the effective masses of electrons and holes in silicon, germanium and gallium Candidates
arsenide, calculate the position of the intrinsic Fermi energy level with respect to must not
the center of the bandgap for each semiconductor at T = 300K. (For silicon: write on
this margin
m*p  0.56 m 0 , m*n  1.08m0 , For germanium:
m*p  0.37 m 0 , m*n  0.55m0 , For GaAs: m*p  0.48m 0 , m*n  0.067 m0 ) (20 M)

:: 22 ::
 Candidates
must not
write on
this margin

:: 23 ::
 Candidates
must not
write on
this margin

03.(c) (i) 1
I1 1 1 1 I2

V1 1 1 V2

Two – T networks are connected in cascade as shown in the above figure. Find a
single T equivalent for the network. (10 M)

:: 24 ::
 Candidates
must not
write on
this margin

:: 25 ::
(ii) For the network shown in Fig. Candidates
Determine the Admittance parameters (10 M) must not
write on
6 this margin

I1 I2
3 3
+ +

V1 3 V2

Fig.

:: 26 ::
 Candidates
must not
write on
this margin

04. (a) (i) A p-type silicon sample is placed in a magnetic field as shown in Fig. The applied
electric field is –750 ax V/m. The electron and hole mobilities are 0.14 and
0.05 m2/V-s respectively at the operating temperature. Find the magnitudes of
(1) the voltage across the sample length (3 M)
(2) the drift velocity (3 M)
z
B = 0.05az T

1.25cm
0.8m
m
x 0.9cm

(3) the transverse force per coulomb of moving charge due to B (3 M)

(4) the transverse electric field intensity (3 M)
(5) the Hall voltage (3 M)

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(ii) Bring out the important differences between the following devices: Candidates
PN junction diode and Schottky barrier diode must not
(5 M) write on
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04. (b) A coil, having a resistance of 15  and an inductance of 0.75 H, is connected in series Candidates
with a capacitor (fig a). The circuit draws maximum current, when a voltage of 200 V at must not
50 Hz is applied. A second capacitor is then connected in parallel to the circuit(fig b). write on
What should be its value, such that the combination acts like a non-inductive resistance, this margin
with the same voltage (200 V) at 100 Hz? Calculate the current drawn by the two
circuits. (20 M)
R L

+
V=200 V C1
–
f1 =50 Hz
(a) Circuit
diagram

I R L

+ I2 I1
V=200 V C2 C1
–
f2 =100 Hz
(b) Circuit
diagram

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04.(c) The silicon transistor as connected in figure below has a minimum value of hfb of 30.
(20 M)
+12V
Ic
2.2k
C V0
Is Ib
Vi Q
15 k
100k E

-12V

(i) If input voltage Vi = 12 volts, show that the transistor is in Saturation.

(ii) If input voltage Vi = 0.4 volt, show that the transistor is in cut-off.

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 SECTION-B Candidates
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05. (a) The circuit shown in fig. uses a transistor hfe = 50, hre = 1k, and hib = 20. The
this margin
circuit lower cut-off frequency (f1) is to be 100Hz.
Calculate the following quantities:
(i) The required capacitance for C2 (3 M)
(ii) Av with the emitter terminal completely bypassed to ground (3 M)
(iii) Av when f =100Hz, using the C2 value selected (3 M)
(iv) Av when f= 100Hz and when C2 is (incorrectly) selected as XC2 = RE/10. (3 M)

R1 RC
39k 3.3k

Q1
C1
R2 RE
10k 3.3k C2

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05. (b) Find Current I Using Mesh Analysis (12 M) Candidates
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3 j 4 write on
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j 3 I
50450 +- j5
– j 8
V

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05. (c) Explain how Hall effect can be used to find the carrier concentration in a semi-
conductor. (12 M)

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05. (d) In fig. (i), switch S1 is closed at t = 0, switch S2 is opened at t = 4 ms.

Obtain i for t > 0.
(12 M)
t=0 50 
S1
100  t =4ms S2
i
100 V +

0.1 H

fig. (i)

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05. (e) A photocathode is illuminated with radiation of wave length 500nm. The cathode has Candidates
a work-function of 1.2eV. Calculate the anode voltage required to produced zero must not
anode current. When the anode voltage is +90V, find the velocity of the electrons at write on
the anode if the cathode is illuminated with radiation of wavelength 250 nm. this margin

(12 M)

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06.(a) What are the two main types of field-effect transistors ? Give the points of superiority
of FETs over a conventional transistor and the points of disadvantages of FET over
conventional transistor?
(20 M)

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06.(b) In the circuit of Figure. when the switch is closed at t = 0, it is noticed that i(0+) =
10mA and Vab(t) = 0, t0 sec. Assuming zero initial current for inductor and zero
initial charge for capacitor, find the values of R1 and L
i S

R1 L
5V a b

C=5F R2=200

Fig
. (20 M)

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06.(c) (i) Define Electrical properties of semiconductor materials briefly. (15 M) Candidates
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(ii) Find the mobility of electrons in copper assuming that each atom contributes one Candidates
free electron for conduction. (Resistivity of copper = 1.710–6 ohm-cm, atomic must not
weight = 63.54, density = 8.96 gm/cc. Avogadro’s number = 6.0251023 and write on

electronic charge = 1.610–19 coulomb). (5 M) this margin

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07.(a) Two passive two-port networks are connected in cascade as shown in figure.
A voltage source is connected at port 1.
I1 I2 I3
+ + +
V1 ~ Two-port Two-port
V2 V3
 Network-1 Network-2
 
Port-1 Port-2 Port-3
Given: V1 = A1V2 + B1I2
I1 = C1V2 + D1I2
V2 = A2V3 + B2I3
I2 = C2V3 + D2I3
A1, B1, C1, D1, A2, B2, C2 and D2 are the generalized circuit constants.
Draw the Thevenin equivalent circuit with respect to port 3? (20 M)

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07.(b) For the PMOS transistor in the circuit shown in figure, kp  8A / V 2 , W/L = 25, and Candidates
must not
Vtp  1V . For I = 100A, find the voltages VSD and VSG for R = 0, 10k, 30k, write on
and 100k. For what value of R is VSD = VSG? VSD = VSG/2 ? VSD = VSG/10 ? this margin

+10V
VSG + +
–
–VSD
R

Figure (20 M)

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07.(c) Z-parameters of the two-port network N in below figure (i) are Z11 = 4s,
Z12 = Z21 = 3s and Z22 = 9s. (all are in krad/s)
(i) Replace N by its T-equivalent (10 M)
(ii) Use part (a) to find input current i1 for s = cos 1000t (V). (10 M)

I1 A B I2
+ +
V1 N V2
– –
– –
s + 12 k

C
6 k

fig(i)

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08. (a) A step-graded germanium diode has a resistivity of 2  -cm on the p side and 1  -cm Candidates
on the n side. Calculate the height of the potential barrier. must not
For germanium p = 1800 cm2/V-s and write on
this margin
μ n = 3800 cm2/V-s and ni = 2.5  103/cm2 at 3000K. Prove formula used. (20 M)

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08.(b) For the s-domain circuit shown in the figure, find: Candidates
(i) the transfer function H(s) = V0/V1, (10 M) must not
(ii) the impulse response, (5 M) write on
(iii) the response when vi(t) = u(t) V (5 M) this margin

1 a s

+
Vi + 1 1 V0
–
–

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08.(c) Explain, what you understand by voltage-dependent current source and current Candidates
dependent current source. For the circuit shown in Fig. determine the currents i1, i2 must not
and i3 using nodal analysis. write on
(20 M) this margin
4V
i1 2 ix
+ + 

24V 6 8 3A

i2 i3

Fig
.

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SPACE FOR ROUGH WORK Candidates
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