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Plasmonic
Nanophotonics
Motivation – Device densities
www. intel.com
¾ Device densities are exponentially increasing
Why not electronics?
As data rates AND component packing densities INCREASE,
electrical interconnects become progressively limited by RC-delay:
A
L
1 A
R ∝ L / A ⊕ C ∝ L ⇒ Bmax ∝ ∝ 2
RC L
A
⇒ Bmax ≤ 10 × 2 (bit/s ) ( A << L2 !)
15
core
a cladding
2π 2π
ncore = nclad + δn = n + δn ⇒ V = a n −n 2
≅ a 2nδn
2
λ
core clad
λ
well − guided mode : V ∝ π ⇒ a ≅ λ / 2 2nδn − mode size : δn << 1 ( !)
nCLAD
nCORE
Solutions ?
Some fundamental problems!
Some:
Photonic functionality based on metals?!
CMOS Electronics
1G
130 nm
Coaxial circuits
1.8 μm
1M
The ever-increasing need for faster information processing and transport is undeniable
Electronic components are running out of steam due to issues with RC-delay times
Motivation – nm scale THz speed
Speed
?? Photonics
nm, THz THz, µm
Electronics
nm, GHz
Device size
Courtesy of M. Brongersma
Optical Properties of an Electron Gas (Metal)
Dielectric constant of a free electron gas (no interband transitions)
• Consider a time varying field: E ( t ) = Re {E (ω ) exp ( −iωt )}
d 2r
• Equation of motion electron (no damping) m 2 = −eE
dt d 2p
m 2 = e2E
• Dipole moment electron p ( t ) = −er (t ) dt
Np ( ω ) Ne 2 1 ω p2
• The dielectric constant is: εr = 1+ χ = = 1− = 1− 2
ε 0E (ω ) ε 0m ω 2 ω
εr
ωp ω
Dispersion Relation for EM Waves in Electron Gas
Determination of dispersion relation for bulk plasmons
ε ∂ 2
E (r, t )
• The wave equation is given by: r
= ∇ 2
E (r, t )
c 2
∂t 2
ω 2ε r = c 2 k 2 ⎛ ω 2
⎞
ω p2 ω ⎜⎜1 − 2 ⎟⎟ = ω 2 − ω p2 = c 2 k 2
2 p
• Dielectric constant: ε r = 1 − 2
ω ⎝ ω ⎠
ω = ω p2 + c 2 k 2
• Dispersion relation: ω
ω = ck
ωp
No allowed propagating modes
(imaginary k)
k
Note1: Solutions lie above light line
Note2: Metals: ħωp ≈ 10 eV; Semiconductors ħωp < 0.5 eV (depending on dopant conc.)
Plasmon-Polaritons
What is a plasmon ?
• Compare electron gas in a metal and real gas of molecules
Bulk plasmon
• Metals allow for EM wave propagation above the plasma frequency
They become transparent!
Surface plasmon z
E Strong local field
Dielectric
Metal I
H
Note: This is a TM wave
z z
D << λo
I I
Long wavelength Short wavelength
ωp ω
−ε d
ω sp
ω ⎛ ε mε d ⎞
1/ 2
ω ω
• Low ω: k x = lim ⎜ ≈ εd k= εd
⎟ c
c ε m →−∞ ⎝ ε m + ε d ⎠ c ω
ωsp
• At ω = ωsp (when εm = -εd): kx → ∞
ω ε mε d
D k sp =
c εm + εd
λsp E
εd > 0 Dispersion Relation for SPPs:
εm < 0 - - -+ + + - - - + + +
H
optical ω
nm-scale λ
ε m (ω ) ≈ −ε d (ω )
λp ~ very small
Metal/air
ωSP , Air
ω SP ,ε Metal/dielectric with εd
d
ωe
kh > ksp
k Air ksp kh k
• SPP at metal/air interface can be excited from a high index medium!
• How does this work in practice ?
Excitation Surface-Plasmon Polaritons with Light
Kretchmann geometry (Trick 1) From dispersion relation
k sp
• Makes use of SiO2 prism
k //,SiO2
• Create evanescent wave by TIR θ
ω ω c
ω =c =
k k n
ωsp
ωe
2
r + r exp ( 2ik z1d )
2 p p
p
E
• Solution (e.g. transfer matrix theory! ) R= r
= 01 12
E 0
p
1 + r r exp ( 2ik z1d )
p p
01 12
Notes: Light intensity reflected from the back surface depends on the film thickness
There exists a film thickness for perfect coupling (destructive interference between two refl. beams)
When light coupled in perfectly, all the EM energy dissipated in the film)
Dependence on Film Thickness
Critical angle
Θ
R E
H
laser detector
θ
Raether, “Surface plasmons”
Critical angle
Reflectance
ωe
2π 2π k//
− k//,SiO2
P P
Excitation Surface-Plasmon Polaritons with Dots (Trick 3)
Dipolar radiation pattern
d = 200nm
h = 60nm
E
700 nm
E-fields
200 nm
Al
End stripe
Note oscillations
metal
glass
300 nm
300 nm
ω ω
=c
k
• Array causes coupling between waves ωsp
for which:
• Full photonic bandgap confines SPP to the line defect created in the array
Guiding geometries
• Stripes and wires
600 nm
d = 75 nm
S.A. Maier, M.L. Brongersma H.A. Atwater, Appl. Phys. Lett. 78, 16, 2001
EM Near-field Interaction between Nanoparticles
● Light can penetrate metallic nanoparticles and set the electrons in motion
● This collective electron motion is called a plasmon
● Plasmonics: Guiding “light” along metallic nanostructures
● Loss per unit length ≈ 3 dB/μm …. Loss per device may be manageable
Excitation of a Single Metal Nanoparticle
Energy (eV)
4 3.5 3 2.5 2 1.5
500
R = 5 nm
Ag cluster
Particle 400 D = 10 nm
Volume = V0 n=3.3
n=1.5
(nm 2)
2
300
abs (nm
εM = ε1,M + iε2,M
σext
200
σ
E-field 1
++ +++ 100
-- - - -
0
300 400 500 600 700 800 900
Host matrix λ (nm )
ε1, M (ω )
2
εH = ε1,H = nH ω
σ abs (ω ) = 9 ε V 3/ 2
H 0
⎡⎣ε1, M (ω ) + 2ε H ⎤⎦ + ε 2, M (ω )
2 2
c
σabs
C. F. Bohren, D. R. Huffman, Absorption and Scattering of Light by Small Particles, Wiley, New York 1983
Properties of a Chain of Metal Nanoparticles
pm d
p i ,m (t ) = −ω 02 p i ,m (t ) − γ iω 12 [ p i ,m −1 (t ) + p m +1 (t )]
••
ρVe
Where ω12 =
4πε 0 me n 2 d 3 pT,m pT,m+1
γT = 1:
γ ≡ a polarization dependent constant
γL = -2: pL,m pL,m+1
ω0 + 2 ω1
2 ω
ω0 ω 12
Transverse
ω = ω0 + γ i cos (kd )
ω0
ω0
ρVe
Where ω1 =
2
2 4πε 0 me n 2 d 3
ω0 - 2 ω 1
ω0
dω ω12
Longitudinal v g,i = = −γ i d sin(kd )
dk ω0
-π -π π π
0
d 2d 2d d
k
Example: Ag particles, R = 10 nm vg,T = 3.4 x 106 m/s
d = 40 nm; n = 1.5
Ö ΔωT= 1.8 x 1014 s-1 (E = 115 meV)
Propagation Through Corners
IN
ω T
L T ωo
L
OUT π 0 π
−
d k d
Maximum ηT at ω0
SEM Images of Nanoparticle Arrays
50 nm
1 μm
• More complex architectures
Y. A. Vlasov, IBM
Si photonic crystal switch
¾ Size ~ µm2
¾ Power ~ mW (~105 devices for 100W)
¾ Speed ~ 10GHz
Optical memory effect
1
P
N Tp
k Rp
0.5
Tn
Rn
0
400 600 800
wavelength (nm)
Near field characteristics of nanoantenna
Courtesy of M. Brongersma