PD - 91357C

IRLZ24N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 55V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.06Ω
G
l Fully Avalanche Rated
S
ID = 18A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current  72
PD @TC = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy ‚ 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case –––– –––– 3.3
RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
RθJA Junction-to-Ambient –––– –––– 62

07/12/02
IRLZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061––– V/°C Reference to 25°C, ID = 1mA
––– –––0.060 V GS = 10V, ID = 11A „
RDS(on) Static Drain-to-Source On-Resistance ––– –––0.075 Ω V GS = 5.0V, ID = 11A „
––– –––0.105 V GS = 4.0V, ID = 9.0A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = V GS, ID = 250µA
gfs Forward Transconductance 8.3 ––– ––– S V DS = 25V, ID = 11A
––– ––– 25 V DS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 V DS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– –––-100 V GS = -16V
Qg Total Gate Charge ––– ––– 15 ID = 11A
Qgs Gate-to-Source Charge ––– ––– 3.7 nC V DS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 V GS = 5.0V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 7.1 ––– V DD = 28V
tr Rise Time ––– 74 ––– ID = 11A
ns
td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V
tf Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 480 ––– V GS = 0V

Coss Output Capacitance ––– 130 ––– pF V DS = 25V
Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 18
(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G
––– ––– 72
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V „
t rr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A
Q rr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
ƒ ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 IRLZ24N

100 VGS 100 VGS

TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

6.0V 6.0V
4.0V 4.0V
3.0V 3.0V
BOTTOM 2.5V BOTTOM 2.5V
10 10

2.5V
1 1

2.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
T J = 25°C T J = 175°C
0.1 A 0.1 A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.0
I D = 18A
R DS(on) , Drain-to-Source On Resistance

TJ = 25°C
I D , Drain-to-Source Current (A)

2.5
TJ = 175°C

10 2.0
(Normalized)

1.5

1 1.0

0.5

V DS = 15V
20µs PULSE WIDTH VGS = 10V
0.1 0.0 A
A
2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRLZ24N

800 15
V GS = 0V, f = 1MHz I D = 11A
C iss = Cgs + C gd , Cds SHORTED V DS = 44V

VGS , Gate-to-Source Voltage (V)

C rss = C gd V DS = 28V
C oss = C ds + C gd 12
600
Ciss
C, Capacitance (pF)

400
Coss
6

200
Crss 3

FOR TEST CIRCUIT

SEE FIGURE 13
0 A 0 A
1 10 100 0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

I D , Drain Current (A)

100
TJ = 175°C
TJ = 25°C 10µs
10

10 100µs

TC = 25°C 1ms
TJ = 175°C
VGS = 0V Single Pulse 10ms
1 A 1 A
0.4 0.8 1.2 1.6 2.0 1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRLZ24N

20
RD
VDS

V GS
16 D.U.T.
ID, Drain Current (Amps)

RG
+
-V DD
12
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8

Fig 10a. Switching Time Test Circuit

4
VDS
90%

0 A
25 50 75 100 125 150 175
TC , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (ZthJC )

D = 0.50

1
0.20

0.10
0.05
0.02 PDM
0.01
0.1
SINGLE PULSE t
1
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t /t
1 2
2. Peak TJ = PDM x Z thJC + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRLZ24N

140
L ID

EAS , Single Pulse Avalanche Energy (mJ)

VDS TOP 4.5A
120 7.8A
D.U.T. BOTTOM 11A
RG +
100
V
- DD

5.0 V IAS 80
tp
0.01Ω
60

Fig 12a. Unclamped Inductive Test Circuit

40

20

VDD = 25V
V(BR)DSS 0 A
25 50 75 100 125 150 175

tp Starting TJ , Junction Temperature (°C)

VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

5.0 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRLZ24N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRLZ24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

Part Marking Information

TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY A
LOT CODE 9B1M INTERNATIONAL PART NUMBER
RECTIFIER
IRF1010
LOGO 9246
9B 1M DATE CODE
ASSEMBLY
(YYWW)
LOT CODE
YY = YEAR
WW = WEEK

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/02
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/