MJD44H11(NPN),

MJD45H11(PNP)

Complementary Power
Transistors
DPAK for Surface Mount Applications
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Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters, SILICON
and power amplifiers.
POWER TRANSISTORS
Features 8 AMPERES
Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS, 20 WATTS
(No Suffix)
Straight Lead Version in Plastic Sleeves (1 Suffix)
COMPLEMENTARY
Electrically Similar to Popular D44H/D45H Series
COLLECTOR COLLECTOR
Low Collector Emitter Saturation Voltage 2, 4 2, 4
Fast Switching Speeds
Complementary Pairs Simplifies Designs
1 1
Epoxy Meets UL 94 V0 @ 0.125 in BASE BASE
NJV Prefix for Automotive and Other Applications Requiring
3 3
Unique Site and Control Change Requirements; AECQ101
EMITTER EMITTER
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4
Compliant
4 4
MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus
sign, , for PNP omitted, unless otherwise noted) 1
1 2 1 2
Rating Symbol Max Unit 3 2 3 3
CollectorEmitter Voltage VCEO 80 Vdc DPAK DPAK IPAK
EmitterBase Voltage VEB 5 Vdc CASE 369C CASE 369G CASE 369D
STYLE 1 STYLE 1 STYLE 1
Collector Current Continuous IC 8 Adc
Collector Current Peak ICM 16 Adc
Total Power Dissipation PD MARKING DIAGRAMS
@ TC = 25C 20 W
Derate above 25C 0.16 W/C AYWW
AYWW
Total Power Dissipation (Note 1) PD J4 J4
@ TA = 25C 1.75 W xH11G xH11G
Derate above 25C 0.014 W/C
Operating and Storage Junction TJ, Tstg 55 to +150 C DPAK IPAK
Temperature Range
A = Assembly Location
ESD Human Body Model HBM 3B V Y = Year
ESD Machine Model MM C V WW = Work Week
J4xH11 = Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be x = 4 or 5
assumed, damage may occur and reliability may be affected. G = PbFree Package
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.

Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

September, 2016 Rev. 20 MJD44H11/D
 MJD44H11 (NPN), MJD45H11 (PNP)

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 6.25 C/W
Thermal Resistance, JunctiontoAmbient (Note 2) RqJA 71.4 C/W
Lead Temperature for Soldering TL 260 C
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, , for PNP omitted, unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage VCEO(sus) Vdc
(IC = 30 mA, IB = 0) 80

Collector Cutoff Current ICES mA

(VCE = Rated VCEO, VBE = 0) 1.0

Emitter Cutoff Current IEBO mA

(VEB = 5 Vdc) 1.0

ON CHARACTERISTICS
CollectorEmitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.4 Adc) 1

BaseEmitter Saturation Voltage VBE(sat) Vdc

(IC = 8 Adc, IB = 0.8 Adc) 1.5

DC Current Gain hFE

(VCE = 1 Vdc, IC = 2 Adc) 60
(VCE = 1 Vdc, IC = 4 Adc) 40

DYNAMIC CHARACTERISTICS
Collector Capacitance Ccb pF
(VCB = 10 Vdc, ftest = 1 Mhz)
MJD44H11 45
MJD45H11 130

Gain Bandwidth Product fT MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)
MJD44H11 85
MJD45H11 90

SWITCHING TIMES

Delay and Rise Times td + tr ns

(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11 300
MJD45H11 135

Storage Time ts ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11 500
MJD45H11 500

Fall Time tf ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11 140
MJD45H11 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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2
 MJD44H11 (NPN), MJD45H11 (PNP)

1
0.7
D = 0.5
r(t), EFFECTIVE TRANSIENT THERMAL
0.5
RESISTANCE (NORMALIZED)

0.3 0.2
0.2 P(pk)
0.1 RqJC(t) = r(t) RqJC
RqJC = 6.25C/W MAX
0.1 0.05 D CURVES APPLY FOR POWER
0.07
0.02 PULSE TRAIN SHOWN t1
0.05 READ TIME AT t1 t2
0.03 0.01 TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)

Figure 1. Thermal Response

20 There are two limitations on the power handling ability of

10 100ms a transistor: average junction temperature and second
500ms
IC, COLLECTOR CURRENT (AMP)

5 breakdown. Safe operating area curves indicate IC VCE

3 dc 5ms 1ms limits of the transistor that must be observed for reliable
2 operation; i.e., the transistor must not be subjected to greater
1 dissipation than the curves indicate.
0.5 THERMAL LIMIT @ TC = 25C The data of Figure 2 is based on TJ(pk) = 150_C; TC is
0.3 WIRE BOND LIMIT variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
0.1 150_C. TJ(pk) may be calculated from the data in
0.05 Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
0.02 limitations imposed by second breakdown.
1 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Forward Bias

Safe Operating Area

TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)

2 20

TC
1.5 15

1 10 TA
SURFACE
MOUNT
0.5 5

0 0
25 50 75 100 125 150
T, TEMPERATURE (C)
Figure 3. Power Derating

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 MJD44H11 (NPN), MJD45H11 (PNP)

1000 1000
hFE, DC CURRENT GAIN VCE = 1 V VCE = 1 V

hFE, DC CURRENT GAIN

150C
150C
25C
25C
55C 55C
100 100

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain

1000 1000
VCE = 4 V VCE = 4 V

150C
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

150C
25C
25C
55C 55C
100 100

10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain
VCE(sat), COLLEMIT SATURATION VOLTAGE (V)

VCE(sat), COLLEMIT SATURATION VOLTAGE (V)

0.8 0.8

0.7 IC/IB = 20 0.7 IC/IB = 20

55C
0.6 150C 0.6

0.5 0.5

0.4 0.4
25C
0.3 25C 0.3
150C
0.2 0.2
55C
0.1 0.1
0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 8. MJD44H11 Saturation Voltage Figure 9. MJD45H11 Saturation Voltage
VCE(sat) VCE(sat)

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4
 MJD44H11 (NPN), MJD45H11 (PNP)

1.4 1.4
VBE(sat), BASEEMIT SATURATION

VBE(sat), BASEEMIT SATURATION

1.2 1.2

1.0 1.0
VOLTAGE (V)

VOLTAGE (V)
55C 55C
0.8 0.8
25C 25C
0.6 0.6

150C 150C
0.4 0.4

0.2 IC/IB = 20 0.2 IC/IB = 20

0 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 10. MJD44H11 Saturation Voltage Figure 11. MJD45H11 Saturation Voltage
VBE(sat) VBE(sat)
VCE, COLLECTOREMITTER VOLTAGE (V)

VCE, COLLECTOREMITTER VOLTAGE (V)

2.0 2.0
1.8 TA = 25C 1.8 TA = 25C
1.6 1.6
1.4 1.4
1.2 1.2
1.0 1.0
0.8 0.8
IC = 8 A
0.6 0.6
IC = 8 A
0.4 0.4 IC = 3 A
IC = 3 A 1A
0.2 IC = 0.1 A 0.5 A 1A 0.2 I = 0.1 A 0.5 A
C
0 0
0.1 1 10 100 1000 10,000 0.1 1 10 100 1000 10,000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 12. MJD44H11 Collector Saturation Figure 13. MJD45H11 Collector Saturation
Region Region

1000 1000
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

Cob

Cob
100 100

10 10
0.1 1 10 100 0.1 1 10 100
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance

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5
 MJD44H11 (NPN), MJD45H11 (PNP)

100 100
fTau, CURRENTGAINBANDWIDTH

fTau, CURRENTGAINBANDWIDTH
VCE = 2 V VCE = 2 V
PRODUCT

PRODUCT
10 10
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 16. MJD44H11 Figure 17. MJD45H11
CurrentGainBandwidth Product CurrentGainBandwidth Product

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6
 MJD44H11 (NPN), MJD45H11 (PNP)

ORDERING INFORMATION
Device Package Type Package Shipping
MJD44H11G DPAK 369C 75 Units / Rail
(PbFree)
NJVMJD44H11G DPAK 369C 75 Units / Rail
(PbFree)
MJD44H111G DPAK3 369D 75 Units / Rail
(PbFree)
MJD44H11RLG DPAK 369C 1,800 / Tape & Reel
(PbFree)
NJVMJD44H11RLG* DPAK 369C 1,800 / Tape & Reel
(PbFree)
MJD44H11T4G DPAK 369C 2,500 / Tape & Reel
(PbFree)
NJVMJD44H11T4G* DPAK 369C 2,500 / Tape & Reel
(PbFree)
MJD44H11T5G DPAK 369C 2,500 / Tape & Reel
(PbFree)
MJD45H11G DPAK 369C 75 Units / Rail
(PbFree)
NJVMJD45H11G* DPAK 369C 75 Units / Rail
(PbFree)
MJD45H111G DPAK3 369D 75 Units / Rail
(PbFree)
MJD45H11RLG DPAK 369C 1,800 / Tape & Reel
(PbFree)
NJVMJD45H11RLG* DPAK 369C 1,800 / Tape & Reel
(PbFree)
MJD45H11T4G DPAK 369C 2,500 / Tape & Reel
(PbFree)
NJVMJD45H11T4G* DPAK 369C 2,500 / Tape & Reel
(PbFree)
NJVMJD44H11D3T4G* DPAK 369G 2,500 / Tape & Reel
(PbFree)
NJVMJD45H11D3T4G* DPAK 369G 2,500 / Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable

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 MJD44H11 (NPN), MJD45H11 (PNP)

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 0.040 1.01
L1 ALTERNATE
Z 0.155 3.93
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 inches

mm

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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8
 MJD44H11 (NPN), MJD45H11 (PNP)

PACKAGE DIMENSIONS

IPAK
CASE 369D
ISSUE C
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
T F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 3.93
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

DPAK3, SURFACE MOUNT

CASE 369G
ISSUE O
NOTES:
T SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
C 2. CONTROLLING DIMENSION: INCH.
B
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
1 2 3 G 0.180 BSC 4.58 BSC
U H 0.034 0.040 0.87 1.01
K J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F L 0.090 BSC 2.29 BSC
L J R 0.180 0.215 4.57 5.45
U 0.020 0.51
G H V 0.035 0.050 0.89 1.27
D 2 PL Z 0.155 3.93

0.13 (0.005) T STYLE 1:

PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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9