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550
3rd ISSE National Conference on Complex Engineering Systems of National
Importance:Current Trends & Future Perspective (INAC-03),October 12-13, 2017
Advanced Materials
DW = 2d f Ec - DV fb ,ci (1)
551
3rd ISSE National Conference on Complex Engineering Systems of National
Importance:Current Trends & Future Perspective (INAC-03),October 12-13, 2017
Advanced Materials
IV. CONCLUSION
In summary, the impact of top metal electrodes Au and Al
is investigated on electrical characteristics of MFIS structure
of FeRAM. The experimental results show that MFIS
devices with Au electrodes exhibit higher memory window
of ~1.05 V as compared to ~0.5 V in MFIS devices with Al
electrodes at 5 V sweep voltage. Moreover, MFIS devices
with Au electrodes exhibited lower leakage current density
of 5.57 A/cm2 as compared to 636 A/cm2 in MFIS
devices with Al electrodes at +5 V. After programming at
5 V, the high and low capacitances for both devices remain
distinguishable for 5000 sec at room temperature. However,
Fig. 3. The data retention (C-T) characteristics of Au or Al exponential decay in Al electrodes based MFIS devices is
/PZT/TiOxNy/Si, MFIS structure of FeRAM, (a) the measured data much fast as compared to Au electrodes based MFIS devices
and (b) extrapolation to 15 years
due to their lower leakage current density. The unfortunate
Here, the exponential decay of capacitance is also observed
performance of MFIS devices with Al electrodes may be
in other high- based MIS capacitors reported in literature
attributable to the presence of dead layer at the Al/PZT
[37], [38]. Additionally, on standard extrapolation to 15
interface or due to stress induced by top Al metal electrode.
years by keeping time axis on log scale as shown in Figure 3
Thus, Metal/PZT/TiOxNy/Si, MFIS structure with Au metal
(b), the retention time of MFIS devices with Al electrodes
electrode is suitable for next generation 1T-FeRAM device
ceases to ~38000 sec. Though for MFIS devices with Au
applications.
electrodes the retention saturates and satisfies the 15 years
requirement of ITRS for next-generation FRAM technology
ACKNOWLEDGMENT
node [1]. Additionally, the extrapolated retention time of
~15 years for Au/PZT/TiON/Si, MFIS structure is The authors are grateful to Professor Ashutosh Sharma,
confirmed by a mathematical linear extrapolation method for the use of samples preparation facility at Thematic Unit
reported elsewhere [34]. Further, to confirm the retention of Excellence, Department of Chemical Engineering, Indian
characteristics of MFIS devices, the J-V characteristics need Institute of Technology (IIT) - Kanpur, India.
to be considered because retention time is directly
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3rd ISSE National Conference on Complex Engineering Systems of National
Importance:Current Trends & Future Perspective (INAC-03),October 12-13, 2017
Advanced Materials
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