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XTR

XTR115
116

XTR
115
XTR116

SBOS124A – JANUARY 2000 – REVISED NOVEMBER 2003

4-20mA CURRENT LOOP TRANSMITTERS

FEATURES APPLICATIONS
● LOW QUIESCENT CURRENT: 200µA ● 2-WIRE, 4-20mA CURRENT LOOP
● 5V REGULATOR FOR EXTERNAL CIRCUITS TRANSMITTER
● VREF FOR SENSOR EXCITATION: ● SMART TRANSMITTER
XTR115: 2.5V ● INDUSTRIAL PROCESS CONTROL
XTR116: 4.096V ● TEST SYSTEMS
● LOW SPAN ERROR: 0.05% ● COMPATIBLE WITH HART MODEM
● LOW NONLINEARITY ERROR: 0.003% ● CURRENT AMPLIFIER
● WIDE LOOP SUPPLY RANGE: 7.5V to 36V ● VOLTAGE-TO-CURRENT AMPLIFIER
● SO-8 PACKAGE

DESCRIPTION used for offsetting or to excite transducers. A current
return pin (IRET) senses any current used in external
The XTR115 and XTR116 are precision current out- circuitry to assure an accurate control of the output
put converters designed to transmit analog 4-to-20mA current.
signals over an industry standard current loop. They
The XTR115 is a fundamental building block of
provide accurate current scaling and output current
smart sensors using 4-to-20mA current transmission.
limit functions.
The XTR115 and XTR116 are specified for opera-
The on-chip voltage regulator (5V) can be used to
tion over the extended industrial temperature range,
power external circuitry. A precision on-chip VREF
–40°C to +85°C.
(2.5V for XTR115 and 4.096V for XTR116) can be

XTR115
XTR116
VREG +5V V+
+5V
8 Regulator 7

XTR115: 2.5V VREF Voltage
XTR116: 4.096V 1 Reference

VLOOP
B
RIN
IIN 6
2 RL
+ A1

VIN E
– 5
RLIM
3
IRET 100 VIN
R1 R2 IO =
2.475kΩ 25Ω RIN

4
I = 100 • IIN

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Copyright © 2000-2003, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

www.ti.com

com SBOS124A .25 25 ✻ ✻ mA Over-Scale Limit ILIM 32 ✻ mA Under-Scale Limit IMIN IREG = 0. unless otherwise noted. RIN = 20kΩ.1Hz to 10Hz en 0. XTR115U XTR115UA XTR116U XTR116UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OUTPUT Output Current Equation IO IO = IIN • 100 ✻ Output Current.5 ✻ V XTR116 4. V+ V+ = 7.05 ±0. V+ = 24V. V+ V+ = 7.003 ±0.5V to 36V ±1 ±10 ✻ ✻ ppm/V vs Load IREF = 0mA to 2.4 % vs Temperature TA = –40°C to +85°C ±3 ±20 ✻ ✻ ppm/°C Nonlinearity IIN = 250µA to 25mA ±0.1 ✻ ✻ V vs Temperature TA = –40°C to +85°C ±0.5V to 36V 1 ✻ mV/V vs Output Current See Typical Curves Short-Circuit Current 12 ✻ mA POWER SUPPLY V+ Specified +24 ✻ V Voltage Range +7. IREF = 0 0. XTR116 www.ti.5mA ±100 ✻ ppm/mA Noise: 0. and TIP29C external transistor. Linear Range 0. (2) Voltage measured with respect to IRET pin.25 ✻ ±0. –40°C to +85°C 240 300 ✻ ✻ µA TEMPERATURE RANGE Specification –40 +85 ✻ ✻ °C Operating –55 +125 ✻ ✻ °C Storage –55 +125 ✻ ✻ °C Thermal Resistance θJA 150 ✻ °C/W ✻ Specifications the same as XTR115U and XTR116U.1Hz to 10Hz 10 ✻ µVp-p Short-Circuit Current 16 ✻ mA VREG(2) Voltage 5 ✻ V Voltage Accuracy IREG = 0 ±0.SPECIFICATIONS At TA = +25°C.5 % vs Temperature TA = –40°C to +85°C ±20 ±35 ✻ ±75 ppm/°C vs Supply Voltage.1 ✻ mV/°C vs Supply Voltage.02 % INPUT Offset Voltage (Op Amp) VOS IIN = 40µA ±100 ±250 ✻ ±500 µV vs Temperature TA = –40°C to +85°C ±0. 2 XTR115.2 0.2 ✻ ±0.2 ✻ mA/µs VREF(2) XTR115 2. RL = 0 380 ✻ kHz Slew Rate 3.25 ✻ ✻ mA SPAN Span (Current Gain) S 100 ✻ A/A Error (1) IIN = 250µA to 25mA ±0.5 +36 ✻ ✻ V Quiescent Current 200 250 ✻ ✻ µA Over Temperature. V+ V+ = 7.01 ✻ ±0.05 ±0.096 ✻ V Voltage Accuracy IREF = 0 ±0. NOTES: (1) Does not include initial error or TCR of RIN.05 ±0.6 ✻ µVp-p DYNAMIC RESPONSE Small Signal Bandwidth CLOOP = 0.5V to 36V ±0.7 ±3 ✻ ±6 µV/°C vs Supply Voltage.1 ±2 ✻ ✻ µV/V Bias Current IB –35 ✻ nA vs Temperature 150 ✻ pA/°C Noise: 0.

40V Input Voltage (referenced to IRET pin) ................................... –55°C to +125°C Lead Temperature (soldering...... V+ (referenced to IO pin) ............... ELECTROSTATIC PACKAGE/ORDERING INFORMATION DISCHARGE SENSITIVITY For the most current package and ordering information......................... Texas Instru- the Package Option Addendum located at the end of this ments recommends that all integrated circuits be handled with data sheet............... 0V to V+ Output Current Limit .............. XTR116 3 SBOS124A www................ Short-Circuit .................... appropriate precautions.................................. Continuous VREF............................ Failure to observe proper handling and installation procedures can cause damage.................... Continuous VREG......................................... Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications... Exposure to absolute maximum conditions for extended periods may degrade device reliability........... ESD damage can range from subtle performance degrada- tion to complete device failure............................ XTR115............................. –55°C to +125°C IIN 2 7 V+ Storage Temperature Range ............................. Short-Circuit .......... +165°C IO 4 5 E (Emitter) NOTE: (1) Stresses above these ratings may cause permanent damage.................. 10s) ....... Continuous VREF 1 8 VREG Operating Temperature ...... see This integrated circuit can be damaged by ESD.. +300°C IRET 3 6 B (Base) Junction Temperature .....ti......................................PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS(1) Top View SO-8 Power Supply.....................................com ..

V+ = 24V.3 28 –75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) VREG VOLTAGE vs VREG CURRENT 5.5V 180 10 160 10k 100k 1M –75 –50 –25 0 25 50 75 100 125 Frequency (Hz) Temperature (°C) REFERENCE VOLTAGE vs TEMPERATURE OVER-SCALE CURRENT vs TEMPERATURE 0.5V 30 –0. unless otherwise noted.5 +125°C –55°C VREG Voltage (V) +25°C –55°C 5.TYPICAL PERFORMANCE CURVES At TA = +25°C. XTR116 www.5 –1 0 1 2 3 4 IREG Current (mA) 4 XTR115. CURRENT GAIN vs FREQUENCY QUIESCENT CURRENT vs TEMPERATURE 260 40 240 Quiescent Current (µA) (V+) = 36V 220 Gain (dB) 30 COUT = 0 RL = 0Ω (V+) = 24V 200 COUT = 10nF 20 RL = 250Ω (V+) = 7. RIN = 20kΩ.ti.com SBOS124A . and TIP29C external transistor.1 31 V+ = 7.1 34 With External Transistor 33 Over-Scale Current (mA) ∆ Reference Voltage (%) 0 32 V+ = 36V –0.0 +25°C Sinking Sourcing Current Current +125°C 4.2 V+ = 24V 29 –0.

XTR115. must be returned to IRET. The XTR115/6 is designed to use an external simplified input circuitry. Power dissipation in this transistor can approach 0. current and power rating. conducts the majority of the full- “XTR115/6. The remaining current flows in Q1. XTR116 5 SBOS124A www. The the choice for any given application. including input circuitry connected to the XTR115/6 can be powered XTR115/6. Mount Q1 so that heat is conducted to the from VREG or VREF. VIN = 0.com . pin 1. Current drawn from these terminals outside of the transducer housing. The XTR115/6 is designed to use virtually any NPN transis- tor with sufficient voltage. A portion of this current flows into the V+ power that can affect the XTR115/6. The XTR115/6 is a two-wire transistor to avoid on-chip thermal-induced errors. supply. Basic Circuit Connections.475kΩ 25Ω IO 4 For IO = 4mA to 20mA I = 100 • IIN IIN = 40µA to 200µA With RIN = 20kΩ NOTE: (1) See also Figure 5. Further discussions that apply to both devices will refer to the The external transistor.” scale output current. Heat current transmitter. This voltage is available EXTERNAL TRANSISTOR for external circuitry and is not used internally. style and thermal mounting considerations often influence A current flowing into pin 2 produces IO = 100 • IIN. Full-scale inputs greater than 0.8V to 4V Possible choices for Q1 (see text).8W with high loop voltage (40V) and 20mA Figure 1 shows basic circuit connections with representative output current. A MOSFET transistor will not improve A voltage input is created with an external input resistor. Common full-scale input voltages range from 1V XTR115 XTR116 IREG IO 5V VREG +5V V+ XTR115: 2. pin 7.ti.5V are recom- mend to minimize the effect of offset voltage and drift of A1. are listed in Figure 1. To minimize these effects. The XTR115 and XTR116 are identical devices except for the reference voltage output. External locate Q1 away from sensitive analog circuitry.096V IREF VREF(1) Voltage 1 Reference VLOOP RIN B 20kΩ IIN Q1 10nF Input VIN IIN 6 Circuitry 2 A1 RL E 5 3 RLIM IRET All return current R1 R2 from IREG and IREF 2. pin 3.5V 8 Regulator 7 XTR116: 4. Q1. Several possible choices input voltage at the IIN pin is zero (referred to the IRET pin). TYPE PACKAGE 2N4922 TO-225 TIP29C TO-220 TIP31B TO-220 FIGURE 1. as the accuracy of the XTR115/6 and is not recommended. shown. This IRET pin is a “local ground” for input circuitry driving the XTR115/6.APPLICATIONS INFORMATION and upward. Case The XTR115/6 is a current-input device with a gain of 100. Its input signal (pin 2) controls the output produced by Q1 will still cause ambient temperature changes current.

5V VREF XTR116 Voltage 40µA Reference VREF R0 Digital IO IIN ≈ 62. it is possible to damage with excessive current. Zero input current Internal circuitry limits the output current to approximately (IIN = 0) will produce an IO equal to the quiescent current. ment circuitry.MINIMUM-SCALE CURRENT MAXIMUM OUTPUT CURRENT The quiescent current of the XTR115/6 (typically 200µA) The XTR115/6 provides accurate.5kΩ Control D/A Optical IIN Isolation IRET A1 0 to 160µA XTR115 5V VREG XTR116 Filter RIN Digital PWM ≈ IRET R1 Control µC Out 2. Digital Control Methods. XTR115/6 by connecting an external resistor from pin 3 to able to power external circuitry while still allowing the pin 5. to change the current limit value. A low scale of 4mA is produced by creating a 40µA input current. Creating Low-Scale Offset.7mA is avail. current must flow through internal resistors. VREG XTR115 XTR116 VREF RIN VO D/A XTR115 VREG VREG XTR115 2. 32mA to protect the transmitter and loop power/measure- Output current will not begin to increase until IIN > IQ /100.ti. or by generating offset in the input drive circuitry. linear output up to 25mA. FIGURE 3.com SBOS124A . Output currents greater than OFFSETTING THE INPUT 45mA may cause permanent damage. is the lower limit of its output current. Current drawn from VREF or VREG will add to this minimum It is possible to extend the output current range of the output current. This can be created with the proper value resistor from VREF (Figure 2). Since all output output current to go below 4mA. 6 XTR115. XTR116 www. This means that more than 3.475kΩ Optical Isolation IRET FIGURE 2.

The bridge causes a protection against reversed connections.01µF IIN B Q1 1N4148 XTR116 D1(1) Diodes VIN E 5 RL VPS 3 IRET IO 4 The diode bridge causes a 1. a series diode or diode bridge should be used for voltage connection lines are reversed. This results in a compliance voltage of approxi.” FIGURE 4.REVERSE-VOLTAGE PROTECTION Most surge protection zener diodes have a diode character- The XTR115/6 low compliance voltage rating (7.5V) per. Various zener diode and surge clamping diodes are specially designed for this purpose. istic in the forward direction that will conduct excessive mits the use of various voltage protection methods without current. For Remote connections to current transmitters can sometimes be integrated transmitter assemblies with short connection to subjected to voltage surges. Figure 4 shows a diode loop connections are reversed. See “Over-Voltage Surge Protection. the interference more likely comes from the surge voltage applied to the XTR115/6 to as low as practical. an unstable output current that varies with the position of loop supply or input wiring. NOTE: (1) Zener Diode 36V: 1N4753A or Motorola P6KE39A. RF can be rectified by the input circuitry of the pin to protect against reverse output connection lines with XTR115/6 or preceding circuitry. It is prudent to limit the maximum the sensor. If a surge protection diode is bridge circuit which allows normal operation even when the used. current loop connections. Reverse Voltage Operation and Over-Voltage Surge Protection.com .4V) loss in loop supply voltage. RIN 2 XTR115 6 0. RADIO FREQUENCY INTERFERENCE mately 9V—satisfactory for most applications. possibly damaging receiving-side circuitry if the compromising operating range. Characterization tests on several production lots showed no damage with loop supply voltages up to 65V. 8 V+ Maximum VPS must be VREG 7 less than minimum 1 voltage rating of zener VREF diode. This generally appears as only a 0. XTR115. For example. XTR116 7 SBOS124A www. OVER-VOLTAGE SURGE PROTECTION Interference may also enter at the input terminals. a 36V protection diode will assure proper transmitter operation at normal loop voltages.7V loss in loop supply voltage. Select a clamp diode with as low a voltage rating as possible for best protection.4V loss in loop supply voltage. two diode drop (approximately 1. yet will provide an appropriate level of protection against voltage surges.ti. Use lower voltage zener diodes with loop power supply voltages less than 30V for increased protection. A diode can The long wire lengths of current loops invite radio frequency be inserted in series with the loop supply voltage and the V+ interference.

5mA) R1 R2 100 VIN RCOMP(1) 2.5µF) IRET (0-2. 8 XTR115.475kΩ 25Ω IO = 50Ω RIN 4 I = 100 • IIN NOTE: (1) Required compensation components. Values of capacitance must remain within the given ranges. XTR115 RISO(1) XTR116 10Ω IO VREG +5V V+ 8 Regulator 7 ILOAD CHF + CLF (0-2.ti. FIGURE 5.5µF) (2.2µF to 22µF) RLIM 3 ILOAD CHF (10pF to 0. one of the compensation schemes shown below must be used to ensure stable operation.5mA) (10pF to 0. XTR116 www.2µF to 22µF) VREF Voltage 1 Reference VLOOP OR B IIN 6 2 RL A1 E + CLF(1) 5 (2. Stable Operation with Capacitive Load on VREF.com SBOS124A . If capacitive loading must be placed on the VREF pin.

PACKAGE OPTION ADDENDUM www.ti.com 28-Aug-2017 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) XTR115U ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U XTR115U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U XTR115U/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U XTR115UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U A XTR115UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U A XTR115UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U A XTR115UG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 115U XTR116U ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U XTR116U/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U XTR116U/2K5G4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U XTR116UA ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U A XTR116UA/2K5 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U A XTR116UA/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U A XTR116UAE4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U A Addendum-Page 1 .

Efforts are underway to better integrate information from third parties. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. PACKAGE OPTION ADDENDUM www. (4) There may be additional marking. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances. Where designed to be soldered at high temperatures. Device is in production to support existing customers. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. LIFEBUY: TI has announced that the device will be discontinued. NRND: Not recommended for new designs. Samples may or may not be available.ti. PREVIEW: Device has been announced but is not in production. Addendum-Page 2 . In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.Orderable Devices may have multiple material finish options. and peak solder temperature. Peak Temp. (6) Lead/Ball Finish . TI may reference these types of products as "Pb-Free".The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications. (5) Multiple Device Markings will be inside parentheses. the lot trace code information. TI bases its knowledge and belief on information provided by third parties. OBSOLETE: TI has discontinued the production of the device. and a lifetime-buy period is in effect. and makes no representation or warranty as to the accuracy of such information. RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.1% by weight in homogeneous materials. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. including the requirement that RoHS substance do not exceed 0.com 28-Aug-2017 Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) XTR116UG4 ACTIVE SOIC D 8 75 Green (RoHS CU NIPDAU Level-3-260C-168 HR -40 to 85 XTR & no Sb/Br) 116U (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. or the environmental category on the device. TI and TI suppliers consider certain information to be proprietary. which relates to the logo. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (3) MSL. but TI does not recommend using this part in a new design. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. "RoHS" products are suitable for use in specified lead-free processes. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. Finish options are separated by a vertical ruled line. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. . and thus CAS numbers and other limited information may not be available for release.

1 8.ti.4 5.4 6.4 6.com 24-Jul-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1 (mm) XTR115U/2K5 SOIC D 8 2500 330.0 12.4 5.0 12.4 6.0 12.2 2.0 12.2 2.0 12.4 5.1 8.2 2. PACKAGE MATERIALS INFORMATION www.0 12.0 Q1 XTR116U/2K5 SOIC D 8 2500 330.1 8.0 Q1 XTR115UA/2K5 SOIC D 8 2500 330.0 Q1 Pack Materials-Page 1 .

0 367.com 24-Jul-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) XTR115U/2K5 SOIC D 8 2500 367. PACKAGE MATERIALS INFORMATION www.0 Pack Materials-Page 2 .0 XTR116U/2K5 SOIC D 8 2500 367.0 367.0 XTR115UA/2K5 SOIC D 8 2500 367.0 35.0 35.0 367.0 35.ti.

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