Elecs Compilation 1

TOPIC: AC/DC CIRCUITS
Multiplying equation (2) by 3 and equation (3)

1. Suppose you double the voltage in a simple by 4 and add, then we get,
dc circuit, and cut the resistance in half. The 0 = -90I1 + 460I3
current will become: Therefore I1 = 5.111I3
Substituting I1 in equation 3, we have
A. Four times as great. I3 = 0.0115 A = 11.5 mA
B. Twice as great.
C. The same as it was before. REFERENCE: ELECTRICAL AND
D. Half as great. ELECTRONIC TECHNOLOGY 10TH EDITION
BY HUGHES
ANSWER: A
Solution: 3. Using Nodal analysis, calculate the voltages

V = IR V1 and V2 in the circuit of Figure below
R
2V = I ( )
2
2V
I=1
(R)
2
Therefore, =

REFERENCE: TEACH YOURSELF ELECTRICITY

AND ELECTRONICS BY STAN GIBILISCO 4TH ED. A. 3/10 V
B. 10/3 V
C. 3V
2. The resistances of the various arms of a D. 10 V
bridge are given in Figure below. The battery
has an e.m.f. of 2.0 V and a negligible ANSWER: B
internal resistance. Determine the value and
direction of the current in BD, using Solution:
Kirchhoffs laws.
At node 1
V1 V1 V2 1 1 V2
+( ) = 1V1 ( + ) = 1 eq.1
5 3 5 3 3
At node 2
V1 V2 V2 V1 1 1
= V2 ( + ) = 0 eq.2
3 7 3 3 7
From equation (2), by multiplying each term by 21,

A. 11.5 mA
B. 15.1 mA 7V1 - V2 (7 + 3) = 0
C. 51.1 A
D. 11.5 A Therefore,
7
ANSWER: A 7V1 = 10V2 V2 = V1
10
Solution: Current in BC=I1 I3
Current in DC=I2 + I3 From equation (1), by multiplying each term by 15,
Applying Kirchhoffs second law to the
mesh formed by ABC and the battery, 8V1 5V2 = 15 4.5 V1 = 15
we have

2=10I1 +30I1 I3 =

=40I1 30I3 eq.1
Similarly for mesh ABDA, REFERENCE: ELECTRICAL AND ELECTRONIC
0 = 10I1 + 40I3 - 20I2 eq. 2 TECHNOLOGY 10TH EDITION BY HUGHES
and for mesh BDCB
0 = 40I3 + 15I2 + I3 30I1 I3
= -30I1 + 15I2 + 85I3 eq.3
Rogelyn L. Barbosa| BS ECE

4. Which of the following can vary with ac, but B. a defined rise and an instantaneous
not with dc? decay
C. a defined rise and a defined decay, and
the two are equal
A. Power. D. an instantaneous rise and an
B. Voltage. instantaneous decay
C. Frequency.
D. Magnitude. ANSWER: C
EXPLANATION: Sawtooth waves can have rise
ANSWER: C and delay slopes in an infinite number of
EXPLANATION: In ac, the polarity reverses at different combinations. One common example
regular intervals. The instantaneous amplitude is shown in the figure. In this case, the rise and
(that is, the amplitude at any given instant in decay are both finite and equal. This is known
time) of ac usually varies because of the as triangular wave.
repeated reversal of polarity. But there are
certain cases where the amplitude remains
constant, even though the polarity keeps
reversing.
The rate of change of polarity is the variable
that makes ac so much different from the dc.
The behavior of an ac wave depends largely
on this rate: the frequency.
REFERENCE: TEACH YOURSELF ELECTRICITY AND ELECTRONICS BY STAN GIBILISCO 4TH ED.
AND ELECTRONICS BY STAN GIBILISCO 4TH ED.
7. What is the power factor (PF) of a purely
5. The period of an ac wave is: resistive ac circuit?
A. The same as the frequency.
B. Not related to the frequency. A. 0
C. Equal to 1 divided by the frequency. B. 1
D. Equal to the amplitude divided by C. 0.707
the frequency. D. without values, it cannot be
determined
ANSWER: C
EXPLANATION: In a periodic ac wave, the ANSWER: B
function of instantaneous amplitude versus EXPLANATION: In ac circuits with reactance,
time repeats itself over and over, so that the the real power P in watts is equals I2 R,or VI
same pattern recurs indefinitely. The length of cos , where is the phase angle. The real
time between one repetitions of the pattern, power is the power dissipated as heat in
or one cycle, and the next is called the period resistance. Cos is the power factor of the
of the wave. This is illustrated below: circuit. Multiplying VI by the cosine of the
phase angle provides the resistive component
for real power equal to I2 R. In a purely
resistive circuit, all circuit power is dissipated
by the resistor(s). Voltage and current are in
phase with each other. Therefore the phase
angle is zero.
P.F= cos ; P.F= cos (0) =

1
REFERENCE: TEACH YOURSELF ELECTRICITY REFERENCE: GROBS BASIC ELECTRONICS 11TH

AND ELECTRONICS BY STAN GIBILISCO 4TH ED. EDITION
8. A 10 R is in parallel with a 15- XL . The

6. A triangular wave exhibits: applied voltage Is 120 Vac. How much is the
apparent power in the circuit?
A. an instantaneous rise and a defined
decay

A. 2.4 kW. Solution:
B. 1.44 kVA. Given: IT = 5A; Vac = 120 V; =
C. 1.44 kW. 53.13
D. 1.73 kVA
P = VI cos = (120V)(5A) cos(53.13)
ANSWER: D. = .
Solution: Given R= 10 ; XL = 15 ; V= 120
VA
V 120 REFERENCE: GROBS BASIC ELECTRONICS 11TH
IL = A = = 8
XL 15 EDITION
VA 120
IR = = = 12
R 10
11. In an ac circuit with only parallel inductors,
A. IT lags VA by 90
IT = (IL )2 + (IR )2= (8)2
+ (12)2
B. VA lags IT by 90
= 14.42 A
C. VA and IT are in phase
P = VI = (120)(14.42) = . . D. None of the above
REFERENCE: GROBS BASIC ELECTRONICS 11TH ANSWER: A

EDITION
EXPLANATION: Inductors do not behave the
9. A 15- resistance is in series with 50 of X L same as resistors. Whereas resistors simply
and 30 of X C . If the applied voltage equals oppose the flow of electrons through them
50 V, how much real power is dissipated by (by dropping a voltage directly proportional to
the circuit? the current), inductors oppose changes in
current through them, by dropping a voltage
A. 60 W. directly proportional to the rate of change of
B. 100 W. current. In accordance with Lenzs Law, this
C. 100 VA. induced voltage is always of such a polarity as
D. 4.16 W. to try to maintain current at its present value.
That is, if current is increasing in magnitude,
ANSWER: A the induced voltage will push against the
electron flow; if current is decreasing, the
Solution: polarity will reverse and push with the
electron flow to oppose the decrease. This
ZT = (R)2 + (XL XC )2 = (15)2 + (50 30)2 = opposition to current change is
25 called reactance, rather than resistance.
VT 50 V
IT = = =2A
ZT 25
X XL XC
= arctan1 = arctan1 =
R R
20
arctan1 = .
15
P = VI cos = (50 V)(2A) cos(53.13) = .
REFERENCE: GROBS BASIC ELECTRONICS 11TH

EDITION
10. A parallel ac circuit with 120 Vac applied has

a total current,IT ,of 5 A. If the phase angle of
the circuit is -53.13 how much real power is
dissipated by the circuit?
A. 600 VA.
B. 480 W. Remember, the voltage dropped across an
C. 360 W. inductor is a reaction against the change in
D. 3.6 kVA current through it. Therefore, the
instantaneous voltage is zero whenever the
ANSWER: C instantaneous current is at a peak (zero

change, or level slope, on the current sine Ip = 6 Is = 6 0.1 = .
wave), and the instantaneous voltage is at a
peak wherever the instantaneous current is at REFERENCE: GROBS BASIC ELECTRONICS 11TH
maximum change (the points of steepest EDITION
slope on the current wave, where it crosses
the zero line). This results in a voltage wave 14. Determine the primary impedance Z P for the
that is 90o out of phase with the current wave. transformer circuit in Figure below.
Looking at the graph, the voltage wave seems
to have a head start on the current wave;
the voltage leads the current, and the
current lags behind the voltage.

EDITION
12. TOPIC: AC/DC CIRCUITS A. 182

B. 812
Determine the input impedance to the series C. 128
network of Fig. 15.23. Draw the impedance D. 218
diagram.
ANSWER: C
Np 2
Solution: Zp = ( ) R L
Ns
4 2
= ( ) 8
1
= 16 8
= 128
A. 6.325 18.43
B. 7.325 18.43 REFERENCE: GROBS BASIC ELECTRONICS 11TH
C. 8.325 18.43 EDITION
D. 9.325 18.43
15. Two series coils, each with an L of 250 H,
ANSWER: A have a total inductance of 550 H connected
series-aiding and 450 H series-opposing. How
Solution: ZT = Z1 + Z2 + Z3 much is the mutual inductance LM between
the two coils?
= R0 + XL 90 + XC 90 A. 10 H
B. 15 H
C. 20 H
= R + jXL jXC D. 25 H
=R + j(XL XC ) = 6 + j(10 12) = ANSWER: D

6 j2
LTsLTo 550450 100
Solution: LM = = =
ZT = . . 4 4 4
REFERENCE: BOYLESTAD INTRODUCTORY = 25 H

CIRCUIT ANALYSIS 10TH EDITION
13. A transformer with a 1:6 turns ratio has 720 EDITION
V across 7200 in the secondary. Calculate
the value of Ip . 16. A current of 1.2 A flows in a coil with an
A. 0.5 A inductance of 0.4 H. How much energy is
B. 0.6 A stored in the magnetic field?
C. 0.7 A
D. 0.8 A A. 0.882 J
B. 0.828 J
ANSWER: B C. 0.288 J
Vs 720 V D. 0.228 J
Solution: Is = = = 0.1 A
RL 7200

Solution: Note that 6 s is twice the RC time
ANSWER: C of 3 s. Then t/RC =2.
LI2 0.4(1.2)2 VR = antilog (log 40 0.434 2)
Solution: Energy = =
2 2 = antilog (1.602
= 0.288 J 0.868)
= antilog (0.734)
REFERENCE: GROBS BASIC ELECTRONICS 11TH = 5.42 V
EDITION
17. What is the total Z of a 600-R in parallel EDITION
with a 300-XL? Assume 600 V for the
applied voltage. 20. An RC circuit has an R of 10 k and a C of
A. 286 0.05 F. The applied voltage for charging is
B. 268 36 V. How long will it take C to charge to 24
C. 862 V?
D. 826 A. 0.459 ms
B. 0.495 ms
ANSWER: B C. 0.549 ms
600 V
Solution: IR = =1A D. 0.459 ms
600
600 V
IL = =2A
300
ANSWER: C
IT = IR 2 + IL 2 = 12 + 22 = 5 Solution: RC= 10 k x 0.05 F= 0.5 ms
The vc rises to 24 V while
IT = 2.24 A
VA 600 V vR drops from 36 to 12 V. Then
ZEQ = = = V
IT 2.24 A t = 2.3 RC log
v
= 2.3 0.5 103
REFERENCE: GROBS BASIC ELECTRONICS 11TH 36
EDITION log
12
= 2.3 0.5 103
18. A 200-H coil has a Q of 40 at 0.5 MHz. Find 0.477
Re. = 0.549 x 103 or 0.549 ms

A. 15.7 EDITION
B. 17.5
C. 57.2 TOPIC: SEMICONDUCTORS INCLUDING DIODES AND
D. 51.7 TRANSISTORS
ANSWER: B 21. The term semiconductor arises from:

XL 2fL
Solution: R e = =
Q Q
20.5106 200106 A. Resistor-like properties of metal
=
40
628 oxides.
= B. Variable conductive properties of some
40
= 15.7 materials.
C. The fact that theres nothing better to
REFERENCE: GROBS BASIC ELECTRONICS 11TH call silicon.
EDITION D. Insulating properties of silicon and
GaAs.
19. An RC circuit has a time constant of 3 s. The
capacitor is charged to 40 V. Then C is ANSWER: B
discharged. After 6 s of discharge, how much EXPLANATION: Various elements,
is VR? compounds, and mixtures can function as
A. 5.42 V semiconductors. The two most common
B. 5.24 V materials are silicon and a compound of
C. 4.25 V gallium arsenic known as gallium arsenide
D. 4.52 V (often abbreviated as GaAs). In the early
years of semiconductor technology,
ANSWER: A germanium formed the basis for many

semiconductors; today it is seen
occasionally but not often. Other REFERENCE: TEACH YOURSELF ELECTRICITY
substances that work as semiconductors are AND ELECTRONICS BY STAN GIBILISCO 4TH ED.
selenium, cadmium compounds, indium
compounds, and the oxides of certain
metals. 24. Which of the following does not result from
adding an acceptor impurity?
AND ELECTRONICS BY STAN GIBILISCO 4TH A. The material becomes P type.
ED. B. Current flows mainly in the form of
holes.
22. The purpose of doping is to: C. Most of the carriers have positive
electric charge.
D. The substance acquires an electron
A. Make the charge carriers move faster. surplus.
B. Cause holes to flow.
C. Give semiconductor material specific ANSWER: D
properties.
D. Protect devices from damage in case of EXPLANATION: If an impurity has a deficiency
transients. of electrons, the dopant is called an acceptor
impurity. When a substance such as
ANSWER: C aluminum, boron, gallium, or indium is added
EXPLANATION: For a semiconductor to a semiconductor, the material conducts by
material to have the properties necessary in means of hole flow. A hole is a missing
order to function as electronic components, electronor more precisely, a place in an
impurities are usually added. The impurities atom where an electron should be, but isnt. A
cause the material to conduct currents in semiconductor with an acceptor impurity is
certain ways. The addition of an impurity to called a P-type semiconductor, because holes
a semiconductor is called doping. have, in effect, a positive (P) charge.
Sometimes the impurity is called a dopant.
REFERENCE: TEACH YOURSELF ELECTRICITY AND ELECTRONICS BY STAN GIBILISCO 4TH ED.
25. When a P-N junction does not conduct even
though a voltage is applied, the junction is
23. A semiconductor material is made into N
type by: A. Reverse biased at a voltage less than
the avalanche voltage
A. Adding an acceptor impurity. B. overdriven
B. Adding a donor impurity. C. Biased past the breaker voltage.
C. Injecting electrons. D. In a state of avalanche effect.
D. Taking electrons away
ANSWER: A
ANSWER: B EXPLANATION: When the battery or dc
power-supply polarity is switched so the N-
EXPLANATION: When an impurity contains an type material is positive with respect to the P
excess of electrons, the dopant is called a type, the situation is called reverse bias.
donor impurity. Adding such a substance Electrons in the N-type material are pulled
causes conduction mainly by means of toward the positive charge pole, away from
electron flow, as in an ordinary metal such as the P-N junction. In the P-type material, holes
copper or aluminum. The excess electrons are are pulled toward the negative charge pole,
passed from atom to atom when a voltage also away from the P-N junction. The
exists across the material. Elements that serve electrons are the majority carriers in the N-
as donor impurities include antimony, arsenic, type material, and the holes are the majority
bismuth, and phosphorus. A material with a carriers in the P-type material. The charge
donor impurity is called an N-type therefore becomes depleted in the vicinity of
semiconductor, because electrons have the P-N junction, and on both sides of it. This
negative (N) charge. zone, where majority carriers are deficient, is

called the depletion region. A shortage of Other junctions are slower. The main
majority carriers in any semiconductor limiting factor is the capacitance at the P-N
substance means that the substance cannot junction during conditions of reverse bias.
conduct well. Thus, the depletion region acts As the junction capacitance of a diode
like an electrical insulator. This is why a increases, maximum frequency at which it
semiconductor diode will not normally can alternate between the conducting state
conduct when it is reverse-biased. A diode is, and the nonconducting state decreases. The
in effect, a one-way current gateusually! junction capacitance of a diode depends on
several factors, including the operating
REFERENCE: TEACH YOURSELF ELECTRICITY voltage, the type of semiconductor
AND ELECTRONICS BY STAN GIBILISCO 4TH ED. material, and the cross-sectional area of the
P-N junction.
26. If the reverse bias exceeds the avalanche
voltage in a P-N junction:
A. The junction will be destroyed.

B. The junction will insulate; no current
If you examine Figure above, you might get
will flow.
the idea that the depletion region,
C. The junction will conduct current.
sandwiched between two semiconducting
D. The capacitance will become extremely
sections, can play a role similar to that of the
high.
dielectric in a capacitor. This is true! In fact, a
reverse-biased P-N junction actually is a
ANSWER: C
capacitor. Some semiconductor components,
EXPLANATION: Sometimes, a diode conducts
called varactor diodes, are manufactured with
when it is reverse-biased. The greater the
this property specifically in mind. The junction
reverse-bias voltage, the more like an
capacitance of a diode can be varied by
electrical insulator a P-N junction getsup to
changing the reverse-bias voltage, because
a point. But if the reverse bias rises past a
this voltage affects the width of the depletion
specific critical value, the voltage overcomes
region. The greater the reverse voltage, the
the ability of the junction to prevent the flow
wider the depletion region gets, and the
of current, and the junction conducts as if it
smaller the capacitance becomes.
were forward-biased. This phenomenon is
called the avalanche effect because
conduction occurs in a sudden and massive
way, something like a snow avalanche on a
mountainside.
28. Holes flow the opposite way from electrons
because:
A. Charge carriers flow continuously.

27. When a P-N junction is reverse-biased, the B. Charge carriers are passed from atom
capacitance depends on all of the following to atom.
except: C. They have the same polarity.
D. No! Holes flow in the same direction as
A. The frequency.
electrons.
B. The width of the depletion region.
C. The cross-sectional area of the
ANSWER: B
junction.
D. The type of semiconductor material.
EXPLANATION: Charge carriers in
semiconductor materials are either
ANSWER: A
electrons, each of which has a unit negative
charge, or holes, each of which has a unit
EXPLANATION: Some P-N junctions can
positive charge. In any semiconductor
alternate between conduction (in forward
substance, some of the current takes the
bias) and nonconduction (in reverse bias)
form of electrons passed from atom to
millions or billions of times per second.
atom in a negative-to-positive direction,

and some of the current occurs as holes voltage drops back below the critical value,
that move from atom to atom in a positive- the junction behaves normally again.Some
to-negative direction. components are designed to take advantage
of the avalanche effect. In other cases, the
avalanche effect limits the performance of a
circuit. In a device designed for voltage
regulation, called a Zener diode, youll hear
about the avalanche voltage or Zener voltage
Sometimes electrons account for most of the specification. This can range from a couple of
current in a semiconductor. This is the case if volts to well over 100 V. Zener diodes are
the material has donor impurities, that is, if it often used in voltage-regulating circuits.
is of the N type. In other cases, holes account
for most of the current. This happens when REFERENCE: TEACH YOURSELF ELECTRICITY
the material has acceptor impurities, and is AND ELECTRONICS BY STAN GIBILISCO 4TH ED.
thus of the P type. The dominating charge
carriers (either electrons or holes) are called 30. When a P-N junction is forward biased,
the majority carriers. The less abundant ones conduction will not occur unless
are called the minority carriers. The ratio of
majority to minority carriers can vary, A. the applied voltage exceeds the
depending on the way in which the forward breakover voltage
semiconductor material has been B. the applied voltage is less than the
manufactured. forward breakover voltage
Figure above is a simplified illustration of C. the junction capacitance is high
electron flow versus hole flow in a sample of enough
N-type semiconductor material, where the D. the depletion region is wide enough
majority carriers are electrons and the
minority carriers are holes. The solid black ANSWER: A
dots represent electrons. Imagine them EXPLANATION: It takes a specific, well-defined
moving from right to left in this illustration as minimum applied voltage for conduction to
they are passed from atom to atom. Small occur through a semiconductor diode. This is
open circles represent holes. Imagine them called the forward breakover voltage.
moving from left to right in the illustration. In Depending on the type of material, the
this particular example, the positive battery or forward breakover voltage varies from about
power-supply terminal (or source of holes) 0.3 V to 1 V. If the voltage across the junction
would be out of the picture toward the left, is not at least as great as the forward
and the negative battery or power-supply breakover voltage, the diode will not conduct,
terminal (or source of electrons) would be even when it is connected as shown in Figure
out of the picture toward the right. below. This effect, known as the forward
breakover effect or the P-N junction threshold
REFERENCE: TEACH YOURSELF ELECTRICITY effect can be of use in circuits designed to
AND ELECTRONICS BY STAN GIBILISCO 4TH ED. limit the positive and/or negative peak
voltages that signals can attain. The effect can
29. TOPIC: SEMICONDUCTORS INCLUDING also be used in a device called a threshold
DIODES AND TRANSISTORS detector, in which a signal must be stronger
than certain amplitude in order to pass
Avalanche voltage is routinely exceeded when through.
a P-N junction acts as a:
A. Current rectifier.
B. Variable resistor.
C. Variable capacitor.
D. Voltage regulator.
ANSWER: D REFERENCE: TEACH YOURSELF ELECTRICITY

EXPLANATION: The avalanche effect does not
damage a P-N junction (unless the voltage is
extreme). Its a temporary thing. When the 31. A diode is normally operated in

forward-biased, it is equivalent to a closed
A. reverse breakdown switch in series with a small equivalent
B. the forward-bias region voltage source ( VF ) equal to the barrier
C. the reverse-bias region potential (0.7V) with the positive side toward
D. either B or C the anode. This equivalent voltage source
represents the barrier potential that must be
ANSWER: D exceeded by the bias voltage before the diode
EXPLANATION: Generally the term bias refers will conduct and is not an active source of
to the use of a dc voltage to establish certain voltage. When conducting, a voltage drop of
operating conditions for an electronic device. 0.7V appears across the diode.
In relation to a diode, there are two bias
conditions; forward and reverse. Either of REFERENCE: ELECTRONIC DEVICES
these bias conditions is established by Conventional Current Version by THOMAS L.
connecting a sufficient dc voltage of the FLOYD 8th ED.
proper polarity across the pn junction.
34. A certain power-supply filter produces an
REFERENCE: ELECTRONIC DEVICES output with a ripple of 100 mV peak-to-peak
Conventional Current Version by THOMAS L. and a dc value of 20 V. The ripple factor is
FLOYD 8th ED.
A. 0.05
B. 0.005
32. Ideally, a diode can be represented by a C. 0.00005
D. 0.02
A. Voltage source
B. resistance ANSWER B.
C. switch Vr(pp) 100 mV
Solution: r = = = 0.005
VDC 20 V
D. all of these
REFERENCE: ELECTRONIC DEVICES
ANSWER: C
EXPLANATION: The ideal model of a CONVENTIONAL CURRENT VERSION BY
THOMAS L. FLOYD 8th ED.
diode is the least accurate approximation
and can be represented by a simple
35. A 60 V peak full-wave rectified voltage is
switch. When the diode is forward-
applied to a capacitor-input filter. If f =
biased, it ideally acts like a closed (on)
120 Hz, R L = 10 k, and C = 10F, the
switch. When the diode is reverse-biased,
ripple voltage is
it ideally acts like an open (off) switch.
Although the barrier potential, the
A. 0.6 V
forward dynamic resistance, and the
reverse current are neglected, this model B. 6 mV
C. 5.0 V
is adequate for most troubleshooting
D. 2.88 V
when you are trying to determine if the
diode is working properly.
ANSWER: C
Solution:
Vp(rect) = 60 V the unfiltered
Conventional Current Version by THOMAS L.
FLOYD 8th ED. peak full-wave rectified voltage
33. In the practical diode model, The frequency of a full-wave

A. The barrier potential is taken into rectified voltage is 120 Hz. The
account approximate peak-to-peak ripple
B. The forward dynamic resistance is voltage at the output is
taken into account
1
C. None of these Vr(pp) ( )V
D. Both A and B fR L C p(rect)
1
=( ) (60) =
ANSWER: A (120)(10 k)(10F)
EXPLANATION: The practical model includes
the barrier potential. When the diode is

REFERENCE: ELECTRONIC DEVICES D. Vp= 18.4 V ; PIV= 19.1 V
CONVENTIONAL CURRENT VERSION BY
THOMAS L. FLOYD 8TH ED. ANSWER: B
Solution: The peak output voltage (taking
36. TOPIC: SEMICONDUCTORS INCLUDING into account the two diode drops) is
DIODES AND TRANSISTORS Vp(sec) = 1.414Vrms =
1.414(12 V) 17 V
A certain full-wave has a peak output voltage Vp(out) = Vp(sec)
of 30 V. A 50 F capacitor-input filter is 1.4 V = 17 V 1.4 V = .
connected to the rectifier. Calculate the The PIV rating for each
peak-to-peak ripple and the dc output diode is
voltage developed across a 600 load PIV = Vp(out) + 0.7 V =
resistance. 15.6 V + 0.7 V = .
A. Vr = 8.33 V; VDC = 25.8 V REFERENCE: ELECTRONIC DEVICES

B. Vr = 9.33 V; VDC = 20.0 V CONVENTIONAL CURRENT VERSION BY
C. Vr = 9.80V; VDC = 30.0 V THOMAS L. FLOYD 8TH ED.
D. Vr = 10.0 V; VDC = 28.0 V
38. Determine the peak value of the output
ANSWER: A voltage in the figure below if the turns ratio
Solution: Vp(rect) = 30 V the is 0.5
unfiltered peak full-wave rectified
voltage. The frequency of a full-wave
rectified voltage is 120 Hz. The
approximate peak-to-peak ripple voltage
at the output is
1
Vr(pp) ( )V A. 85 V
fR L C p(rect) B. 85.7 V
1
=( ) (30) = . C. 84.3 V
(120)(600)(50F) D. 170 V
The approximate dc value of the output
voltage is determined as follows: ANSWER: C
Solution: Vp(pri) = Vp(in) = 170 V
1
VDC = (1 )V The peak secondary voltage is
2fR L C p(rect) Vp(sec) = n Vp(pri) = 0.5(170) = 85 V
1
= (1 ) (30V) The rectified peak output voltage is
(240Hz)(600)(50F)
Vp(out) = Vp(sec) 0.7 V = 85 V 0.7 V
= .
= .
FLOYD 8th ED.
THOMAS L. FLOYD 8TH ED.
37. Determine the peak output voltage for the
39. What is the average value of half-wave
bridge rectifier in the figure below. Assuming
rectified voltage in the figure below?
practical model, what PIV rating is required
for the diodes? The transformer is specified
to have a 12 V rms secondary voltage for the
standard 120 V across the primary.
A. 7.96 V
B. 50 V
C. 0V
A. Vp= 17 V ; PIV= 17.7 V
D. 15.9 V
B. Vp= 15.6 V ; PIV= 16.3 V
C. Vp= 12 V ; PIV= 12.7 V

ANSWER: D in Figure 44. These free electrons easily
Solution: diffuse through the forward based BE junction
Vp 50 into the lightly doped and very thin p-type
VAVG = = = .

base region, as indicated by the wide arrow.
The base has a low density of holes, which are
the majority carriers, as represented by the
white circles. A small percentage of the total
number of free electrons injected into the
base region recombine with holes and move
as valence electrons through the base region
40. In many cases, a PNP transistor can be
and into the emitter region as hole current,
replaced with an NPN device and the circuit
indicated by the red arrows.
will do the same thing, provided that
A. the power supply or battery polarity

is reversed
B. the collector and the emitter is
interchanged
C. the arrow is pointing inward
D. Forget it! A PNP transistor can never When the electrons that have recombined
be replaced with an NPN transistor with holes as valence electrons leave the
crystalline structure of the base, they become
ANSWER: A free electrons in the metallic base lead and
EXPLANATION: Its easy to tell whether a produce the external base current. Most of
bipolar transistor in a diagram is NPN or the free electrons that have entered the base
PNP. If the device is NPN, the arrow at do not recombine with holes because the base
the emitter points outward. If the device is very thin. As the free electrons move
is PNP, the arrow at the emitter points toward the reverse-biased BC junction, they
inward. Generally, PNP and NPN are swept across into the collector region by
transistors can perform the same the attraction of the positive collector supply
functions. The differences are the voltage. The free electrons move through the
polarities of the voltages and the collector region, into the external circuit, and
directions of the resulting currents. In then return into the emitter region along with
most applications, an NPN device can be the base current, as indicated. The emitter
replaced with a PNP device or vice versa, current is slightly greater than the collector
the power-supply polarity can be current because of the small base current that
reversed, and the circuit will work in the splits off from the total current injected into
same wayas long as the new device has the base region from the emitter.
the appropriate specifications.
REFERENCE: TEACH YOURSELF ELECTRICITY Conventional Current Version by THOMAS L.
AND ELECTRONICS BY STAN GIBILISCO 4TH FLOYD 8th ED.
ED.
42. TOPIC: SEMICONDUCTORS INCLUDING
41. TOPIC: SEM DIODES AND TRANSISTORS
For operation as an amplifier, the base of an When operated in cutoff and saturation, the
npn transistor must be transistor acts like a
A. Positive with respect to the emitter A. Linear amplifier

B. Negative with respect to the emitter B. Switch
C. Positive with respect to the collector C. Variable capacitor
D. 0V D. Variable resistor
ANSWER: A ANSWER: B
EXPLANATION: The heavily doped n-type EXPLANATION: A transistor can be operated

emitter region has a very high density of as an electronic switch in cutoff and
conduction-band (free) electrons, as indicated saturation. In cutoff, both pn junctions are

reverse-biased and there is no collector
current. The transistor ideally behaves likes an
open switch between collector and emitter. In
saturation, both pn junctions are forward-
biased and the collector current is maximum.
The transistor behaves like an open switch A. 6.72 V
between collector and emitter. B. 2.72 V
C. 10. 72 V
REFERENCE: ELECTRONIC DEVICES D. 4V
FLOYD 8th ED. ANSWER: C
Solution:
43. TOPIC: SEMICONDUCTORS INCLUDING Since VGS(off) = 4 V, Vp = 4 V. The
DIODES AND TRANSISTORS
minimum value of VDS for the JFET to be
in its constant-current region is
A JFET always operates with
VDS = Vp = 4 V
A. The gate-to-source pn junction
In the constant-current region with VGS = 0 V
reversed biased
B. The gate-to-source pn junction
ID = IDSS = 12 mA
forward- biased
VRD =
C. The drain connected to ground
ID R D = (12 mA)(560) = 6.72 V
D. The gate connected to the source VDD =
VDS + VRD = 4 V + 6.72 V = .
ANSWER: A
EXPLANATION: To illustrate the operation of a Conventional Current Version by THOMAS L.
JFET, Figure 82 shows dc bias voltages FLOYD 8th ED.
applied to an n-channel device. VDD provides
a drain-to-source voltage and supplies current 45. Determine the drain-to-source voltage in the
from circuit of Figure below. The MOSFET
datasheet gives VGS = 8 V and IDSS =
12 mA
drain to source. VGG sets the reverse-bias

voltage between the gate and the source, as
shown. The JFET is always operated with the
gate-source pn junction reverse-biased.
Reversebiasing of the gate-source junction A. 18 V
with a negative gate voltage produces a B. 10.6 V
depletion region along the pn junction, which C. 0V
extends into the n channel and thus increases D. None of the above
its resistance by restricting the channel width.
ANSWER: B
REFERENCE: ELECTRONIC DEVICES Solution: VDS =
Conventional Current Version by THOMAS L. VDD IDSS R D = 18 V (12 mA)(620) =
FLOYD 8th ED. . or 10.6 V
44. For the JFET in Figure below, VGS(off) = REFERENCE: ELECTRONIC DEVICES
4 V and IDSS = 12 mA, Determine the CONVENTIONAL CURRENT VERSION BY
minimum value of VDD required to put the THOMAS L. FLOYD 8TH ED.
device in the constant-current region of
operation when VGS = 0 V. 46. A certain transistor is to be operated
withVCE = 6 V. If its maximum power rating
is 250 mW, what is the most collector
current that it can handle?

R2 5.6 k
VB ( )V = ( ) (10 V)
A. 41.7 mA R1 + R 2 CC 15.6 k
B. 41.7 nA = 3.59 V
C. 41.7 A
D. 0.47 A VE = VB VBE = 3.59 V 0.7V = 2.89 V
VB 2.89 V
ANSWER: A IE = = = 5.16 mA ; IC IE =
RE 560
Solution:
PD(max) 250 mW .
IC = = = .
VCE 6V
VC = VCC IC R C = 10 V
REFERENCE: ELECTRONIC DEVICES (5.16 mA)(1.0 k)
CONVENTIONAL CURRENT VERSION BY = 4.84 V
VCE = VC VE = 4.84 V 2.89 V = .
47. Determine the voltage gain and the ac
output voltage in the given figure if re = REFERENCE: ELECTRONIC DEVICES
50 CONVENTIONAL CURRENT VERSION
BY THOMAS L. FLOYD 8TH ED.
49. Determine the dc input resistance looking in

at the base of the transistor in the figure
below. DC = 125 And VB = 4 V
A. Av = 20 ; Vout = 2 V rms
B. Av = 20 ; Vout = 4 V rms
C. Av = 20 ; Vout = 5 V rms
D. Av = 20 ; Vout = 10 V rms
ANSWER: A
Solution: A. 132 k
RC 1.o k
Av = = B. 142 k
re 50
Vout = Av Vb = (20)(100mV) = C. 152 k
D. 162 k
CONVENTIONAL CURRENT VERSION BY ANSWER: C
THOMAS L. FLOYD 8TH ED. Solution: IE =
VB 0.7V 4 V0.7 V
= = 3.3 mA
RE 1.0 k
48. Determine the VCE and IC in the stiff voltage- DC VB 125(4V)
divider biased transistor circuit of the figure R IN(BASE) = = =
IE 3.3 mA
shown if DC = 100
50. Find VDS and VGS in Figure below. For the

particular JFET in this circuit, the parameter
values such as gm, VGS(off), and IDSS are
A. IC = 6.41 mA ; VCE = 3.59 V such that a drain current (ID) of
B. IC = 5.16 mA ; VCE = 1.95 V approximately 5 mA is produced. Another
C. IC = 5.16 mA; VCE = 2.89 V JFET, even of the same type, may not
D. IC = 6.41 mA; VCE = 4.84 V produce the same results when connected in
this circuit due to the variations in parameter
ANSWER: B values.
Solution:

B. cannot be controlled by gate
current.
C. increases as the gate current
increases.
D. none of the above
ANSWER: A
EXPLANATION:
A. VDS = 10 V ; VGS = 1.1 V

B. VDS = 13.9 V ; VGS = 1.1 V
C. VDS = 9 V ; VGS = 1.1 V
D. VDS = 8.9 V ; VGS = 1.1 V
ANSWER: D
Solution:
VS = ID R S = (5 mA)(220) = 1.1 V
The Figure above shows how the
VD = VDD ID R D
level of the gate current, IG , can
= 15 V (5 mA)(1.0 k)
= 15 V 5 V = 10 V control the forward breakover
voltage, VBRF . The maximum
VDS = VD VS = 10 V 1.1 V = . forward breakover voltage, VBRF,
Since VG = 0 V, occurs when the gate current, I G ,
VGS = VG VS = 0 V 1.1 V = . equals zero. When the gate-cathode
junction is forward biased, the SCR
REFERENCE: ELECTRONIC DEVICES will fi re at a lower anode-cathode
CONVENTIONAL CURRENT VERSION BY voltage. Notice in the figure, that as
THOMAS L. FLOYD 8TH ED. the gate current, IG , is increased,
the value of V BRF is decreased. As
51. Determine the value of R S required to self- the value of gate current, IG , is
bias a p-channel JFET with datasheet values increased, the SCR functions much
of IDSS =25 mA and VGS(OFF) =15 V. like an ordinary rectifier diode. An
VGS is to be 5 V. important characteristic of an SCR is
that once it is turned on by gate
A. 250 current, the gate loses all control.
B. 350 The only way to turn off the SCR is
C. 450 to reduce the anode current below
D. 550 the level of holding current, IH . Not
even a negative gate voltage will
ANSWER: C turn the SCR off in this case. In most
Solution: cases, the anode supply voltage is an
2 alternating voltage. This means that
VGS
ID IDSS (1 ) = the SCR will automatically turn off
VGS(OFF)
5V 2 when the anode voltage drops to
(25 mA) (1 ) = 11.1 mA zero or goes negative. Of course,
15 V
VGS 5V when the anode voltage is negative,
RS = | |= =
ID 11.1 mA
the SCR is reverse-biased. The
process of turning off an SCR is
called commutation.
Conventional Current Version by
EDITION
TOPIC: INDUSTRIAL AND POWER ELECTRONICS
53. An RC phase-shift network is used in SCR and
52. The forward breakover voltage of an SCR
triac circuits to
A. decreases as the gate current
A. Control the conduction angle of the
increases.
thyristor

B. Handle some of the load current
C. Vary the holding current
D. None of the above
ANSWER: A
EXPLANATION:
A. 20.1 A
B. 19.1 mA
C. 20.1mA
D. 19.1 A
SCRs are frequently used to control ANSWER: B

the amount of power that is Solution: VA = 0.9 V
delivered to a load. The figure above voltage at the anode
shows how the conduction angle of VRS = VBIAS VA = 20 V 0.9 V = 19.1 V
an SCR can be controlled over the VRS 19.1 V
IA = = = .
range of 0to 180 by using an RC RS 1.0 k
phase-shifting network. Recall from
basic ac circuit theory that the REFERENCE: ELECTRONIC DEVICES
capacitor and resistor voltage in a CONVENTIONAL CURRENT VERSION BY
series RC circuit are always 90 out THOMAS L. FLOYD 8TH ED.
of phase. In figure above, the
voltage across the capacitor is 55. Determine the gate trigger current and the
applied to the anode side of the anode current when the switch, SW1, is
diode, D1. The cathode lead of the momentarily closed in Figure below. Assume
diode connects to the gate of the VAK = 0.2 V, VGK = 0.7 V and IH = 5 mA
SCR. Again, the purpose of using the
diode is to ensure that the negative
alternation of the input voltage
cannot apply excessive reverse-bias
voltage to the SCRs gate cathode
junction. When R is increased to
nearly its maximum value, the phase
angle between V in and the
capacitor voltage, V C , is
approximately 90. This means it will A. IG = 410 mA ; IA = 448 A
take longer for the voltage across C B. IG = 450 A ; IA = 448 mA
to reach the voltage required to f re C. IG = 400 mA ; IA = 448 A
the SCR. Since the RC network D. IG = 410 A ; IA = 448 mA
provides a delay, the SCR can be
triggered in the 90to 180 portion ANSWER: D
of the input cycle, resulting in Solution:
smoother control of the load VTRIG VGK 3 V 0.7 V
IG = = =
current. RG 5.6 k
VA VK 15 V0.2 V
IA = = =
RA 33
EDITION REFERENCE: ELECTRONIC DEVICES
54. Determine the value of anode current in THOMAS L. FLOYD 8TH ED.
Figure below when the device is on. 10 V.
Assume the forward voltage drop is 0.9 V. 56. A half-wave rectifier circuit employing an SCR
is adjusted to have a gate current of 1mA.
The forward breakdown voltage of SCR is 100
V for Ig = 1mA. If a sinusoidal voltage of 200
V peak is applied, find the firing angle.

A. 30 Iav = Idc = 1 A; = 30
B. 45
2(1)
C. 60 Im = = 3.36 A
(1+cos 30)
D. 90
ANSWER: A
REFERENCE: PRINCIPLES OF ELECTRONICS
Solution: v = Vm sin
BY V.K MEHTA
Here, v = 100 V, Vm = 200 V
100 = 200 sin
59. In figure below, the switch is closed. A diac
= sin1 (0.5) = 30
with a breakover voltage VBO = 30 V is
Firing angle, = = 30
connected in the circuit. If the triac has a
trigger voltage of 1 V and a trigger current of
REFERENCE: PRINCIPLES OF
10 mA, what is the capacitor voltage that
ELECTRONICS BY V.K MEHTA
triggers the triac?
57. An a.c. voltage v = 240 sin314 t is applied to
an SCR half-wave rectifier. If the SCR has a
forward breakdown voltage of 180 V, find
the time during which SCR remains off.
A. 2.4 millisecond
B. 2.5 millisecond
C. 2.6 millisecond
A. 13 V
D. 2.7 millisecond
B. 21 V
C. 31 V
ANSWER: D
D. 41 V
Solution: v = Vm sin 314 t
Here v = 180 V; Vm = 240 V
ANSWER: C
180 = 240 sin (314 t)
Solution: When switch is closed, the
314 t = sin1 (0.75) = 48.6
capacitor starts charging and voltage at point
= 0.848 radian
A increases. When voltage VA at point A

becomes equal to VBO of diac plus gate
t = 0.848 0.0027 sec 314 = 2.7 millisecond
triggering voltage VGT of the triac, the triac is
fired into conduction. Therefore,
VA = VBO + VGT = 30 V + 1V =
BY V.K MEHTA
REFERENCE: PRINCIPLES OF ELECTRONICS BY
58. In an SCR half-wave rectifier circuit, what
V.K MEHTA
peak-load current will occur if we measure
an average (d.c.) load current of 1A at a firing
60. A unijunction transistor has 10 V between
angle of 30 ?
the bases. If the intrinsic standoff ratio is
0.65, What will be the peak voltage if the
A. 3.26 A
forward voltage drop in the pn junction is 0.7
B. 3.36 A
V?
C. 3.46 A
A. 5.2 V
D. 3.56 A
B. 6.2 V
C. 7.2 V
ANSWER: B
D. 8.2 V
Solution: Let Im be the peak load
ANSWER: C
current
V Solution:
Iav = m (1 + cos ) VBB = 10 V; = 0.65; VD = 0.7 V
2RL
Im Standoff voltage= VBB = 0.65 10 = 6.5 V
= (1 + cos )
2
Vm Peak-point voltage,
(Q Im = ) VP = VBB + VD = 6.5 + 0.7 = .
RL
2Iav
Im =
(1+cos )

TOPIC: MICROELECTRONICS INCLUDING OP AMPS which is its slew rate. Figure 339
illustrates this concept. Here the op
61. The input stage of every op amp is a amps output waveform should be
A. Differential amplifier an amplified version of the
B. Push-pull amplifier sinusoidal input, V id . In this case,
C. Common-base amplifier waveform A would be the expected
D. None of the above output. However, if the slope of the
output sine wave exceeds the S R
ANSWER: A rating of the op amp, the waveform
EXPLANATION: A typical op-amp is appears triangular. Therefore, slew-
made up of three types of amplifier rate distortion of a sine wave
circuits: a differential amplifier, a produces a triangular wave, such as
voltage amplifier, and a push-pull waveform B.
amplifier. The differential amplifier is
the input stage for the op-amp. It REFERENCE: ELECTRONIC DEVICES
provides amplification of the difference CONVENTIONAL CURRENT VERSION BY
voltage between the two points. The THOMAS L. FLOYD 8TH ED.
second stage is usually a class A
amplifier that provides additional gain. 63. The input impedance of an inverting
Some op-amps may have more than one amplifier is approximately equal to
voltage amplifier stage. A push-pull class
B amplifier is typically used for the A. Ri
output stage B. zero
C. Infinity
REFERENCE: ELECTRONIC DEVICES D. RF
THOMAS L. FLOYD 8th ED. ANSWER: A
EXPLANATION:
62. The slew-rate specification of an op amp is
the
A. Maximum value of positive or
negative output voltage
B. Maximum rate at which its output
voltage can change
C. Attenuation against a common-
mode signal
D. Frequency where the voltage gain
is is one or unity The circuit is called an inverting
amplifier because the input and
ANSWER: B output signals are 180_ out of
EXPLANATION: phase. The 180 phase inversion
occurs because V in is applied to the
inverting () input terminal of the op
amp. Resistors R F and R i provide
the negative feedback, which in turn
controls the circuits overall voltage
gain. The output signal is fed back to
the inverting input through resistors
Another very important op-amp
R F and R i . The voltage between
specification is its slew rate, usually
the inverting input and ground is the
designated S R . The slew-rate
differential input voltage,
specification of an op amp tells how
designated V id . The exact value of
fast the output voltage can change
V id is determined by the values A
in volts per microsecond, or V/s.
VOL and V out . Even with negative
For a 741 op amp, the S R is 0.5
feedback, the output voltage of an
V/s. This means that no matter
op amp can be found from
how fast the input voltage to a 741
Vout = AVOL X Vid
op amp changes, the output voltage
can change only as fast as 0.5 V/s,

For all practical purposes, V id is so
small that it can be considered zero
in most cases. This introduces little
or no error in circuit analysis.
Because V id is so small (practically
zero), the inverting input terminal of
the op amp is said to be at virtual A. 1.59 KHz
ground. This means that the voltage B. 1.95 KHz
at the op amps inverting input is at C. 5.91 KHz
the same potential as ground, yet it D. 5.19 KHz
can sink no current. Because the
inverting input of the op amp is at ANSWER: D
virtual ground, the voltage source,V Solution:
in , sees an input impedance equal 1.44
to R i . Therefore, Zin Ri. The f=
(R1 + 2R 2 )C
inverting input of the op amp has
extremely high input impedance, R1 + 2R 2 = 3 k + (2)(2.7 k) = 8.4k
but its value is not the input
impedance of the circuit. 1.44
f = (8.4 = .
k)(0.033106 )
REFERENCE: GROBS BASIC
ELECTRONICS 11TH EDITION REFERENCE: PRINCIPLES OF
64. In LM317 voltage regulator shown in the
figure below, R 2 is adjusted to 2.4 k. If the 66. A differential amplifier has an open-circuit
value of R1 is 240 , determine the regulated voltage gain of 100. This amplifier has a
d.c. output voltage for the circuit. common input signal of 3.2 V to both
terminals. This results in an output signal of
26 mV. Determine the common mode
voltage gain and CMRR in dB.
A. ACM =0.0081 and CMRR dB = 80.8

dB
B. ACM =0.0081 and CMRR dB =81.8
dB
A. 17.53 V C. ACM =0.0081 and CMRR dB =82.8
B. 15.37 V dB
C. 13.57 V D. ACM =0.0081 and CMRR dB = 83.8
D. 13.75 V dB
ANSWER: D ANSWER: B
Solution: Solution:
R2 vin(CM) = 3.2 V ; vout = 26 mV
Vout = 1.25 ( + 1) vout 26 mV
R1 ACM = = = . common
2.4 k vin(CM) 3.2
= 1.25 ( + 1) = . mode voltage gain
240
ADM 100
CMRR dB = 20 lo10 = 20log
REFERENCE: PRINCIPLES OF ACM 0.0081
ELECTRONICS BY V.K MEHTA = .
65. Determine the frequency of the circuit ELECTRONICS BY V.K MEHTA
shown in the figure below. Given that R1 =
3 k; R 2 = 2.7 k and C = 0.033F 67. For the circuit shown below, find the
common mode voltage gain and the CMRR in
dB

V
Slew rate 0.5
s
fmax = =
2 (Vpk) 2 x 8
500 kHz
= (0.5 V/s= 500 kHz)
2 x 8
= 9.95 kHz
A. ACM = 0.5 ; CMRR dB = 45.09 dB ELECTRONICS BY V.K MEHTA
B. ACM = 0.25 ; CMRR dB = 69. For the noninverting amplifier circuit shown ,
46.09 dB find peak-to-peak output voltage
C. ACM = 0.5 ; CMRR dB = 48.09 dB
D. ACM = 0.25 ; CMRR dB =

47.09 dB
A. 6V
ANSWER: D B. 12 V
Solution: C. 18 V
RC 100 k
ACM = = = . D. 24 V
2RE 2x200 k
Common mode voltage gain
. ANSWER: B
= = = 56.5A tail
Solution: the input signal is 2 V peak-
current to-peak
I 56.5 A
IE1 = IE2 = E2 = 2 = 28.25 A Rf 5 k
d.c emitter current in each transistor ACL = 1 + =1+ = 6 Voltage gain
Ri 1 k
25 mV 25 mV
re = = = 884.96 a.c emitter
IE1 28.25 A
resistance ACL xvinp = 6 x 2 = peak-to-peak
output voltage

= = = 56.5 Differential
r e . REFERENCE: PRINCIPLES OF
voltage gain ELECTRONICS BY V.K MEHTA

CMMR = 20 log
ACM 70. The most popular form of IC package is
56.5
= 20 log
0.25 A. DIL
= .
B. TO-5
C. Flatpack
ELECTRONICS BY V.KMEHTA
68. Determine the maximum operating
ANSWER: B
frequency for the circuit shown. The slew
EXPLANATION: In order to protect ICs
rate is 0.5 V/s
from an external environment and to
provide mechanical protection, various
forms of encapsulation are used for
integrated circuits.
A. 8.95 kHz
B. 9.95 kHz
C. 7.95 kHz The figure above shows TO-5
D. 6.95 kHz package which resembles a small
signal transistor in both appearance
ANSWER: B and size but differs in that it has 8,
Solution: the maximum peak output 10 or 12 pigtail-type leads. The close
voltage (Vpk ) is approximately 8 V.

leads spacing and the difficulty of
removal from a printed circuit board 73. An ideal ammeter has _____resistance.
has diminished the popularity of this
package with the users. A. Low
B. Infinite
REFERENCE: PRINCIPLES OF C. Zero
ELECTRONICS BY V.K MEHTA D. High
TOPIC: INSTRUMENTATION AND MEASUREMENTS ANSWER: C

EXPLANATION: Just like voltmeters,
71. An ammeter is connected in __________ ammeters tend to influence the amount
with the circuit element whose current we of current in the circuits theyre
wish to measure. connected to. However, unlike the ideal
voltmeter, the ideal ammeter has zero
A. Series internal resistance, so as to drop as little
B. Parallel voltage as possible as electrons flow
C. Series-parallel through it. Note that this ideal
D. None of the above resistance value is exactly opposite as
that of a voltmeter. With voltmeters, we
ANSWER: A want as little current to be drawn as
possible from the circuit under test.
EXPLANATION: Ammeter measures With ammeters, we want as little
value of current flowing in circuit, so voltage to be dropped as possible while
current should flow inside ammeter to conducting current
give proper result. And it has very low
resistance to ensure the correct REFERENCE: PRINCIPLES OF
measurement of current in the circuit. ELECTRONICS BY V.K MEHTA
If it is connected in parallel across any
load then all current in circuit will 74. When an ammeter is inserted in the circuit,
choose lower resistive path (i.e the circuit current will
ammeter) to cause its circuit to be
damaged. Hence it is used in series. A. Increase
B. Decrease
REFERENCE: PRINCIPLES OF C. Remains the same
ELECTRONICS BY V.K MEHTA D. None of the above
72. A Voltmeter is connected in ____with the ANSWER: B

circuit component across which potential EXPLANATION: When an ammeter is
difference is to be measured. placed in series with a circuit, it ideally
drops no voltage as current goes
A. Series through it. In other words, it acts very
B. Parallel much like a piece of wire, with very little
C. Series-parallel resistance from one test probe to the
D. None of the above other. Consequently, an ammeter will
act as a short circuit if placed in parallel
ANSWER: B (across the terminals of) a substantial
source of voltage. If this is done, a surge
EXPLANATION: Voltmeter has very high in current will result, potentially
resistance to ensure that it's connection damaging the meter:
do not alter flow of current in the
circuit. Now if it is connected in series REFERENCE: PRINCIPLES OF
then no current will be there in the ELECTRONICS BY V.K MEHTA
circuit due to its high resistance. Hence
it is connected in parallel to the load 75. The resistance of an ideal voltmeter is
across which potential difference is to
be measured. A. Low
REFERENCE: PRINCIPLES OF B. Infinite
ELECTRONICS BY V.K MEHTA C. Zero

D. High rectifier circuit are of silicon. Calculate the
value of multiplier resistor R S required.
ANSWER: B
A. 890.7 k
EXPLANATION: Since voltmeters are B. 790.7 k
always connected in parallel with the C. 690.7 k
component or components under test, D. 590.7 k
any current through the voltmeter will
contribute to the overall current in the ANSWER: A
tested circuit, potentially affecting the Solution: 100 A average current
voltage being measured. A perfect
voltmeter has infinite resistance, so that Im(f.s.d) = 100 A F.S.D current of
it draws no current from the circuit meter
under test
R T = R S + R m = (R S + 1000) total
REFERENCE: PRINCIPLES OF circuit resistance
Vm = 2 Vr.m.s = 2 x 100 V = 141.4 V
76. In the circuit shown, it is desired to measure peak value of applied voltage
the voltage across a 10 k resistance. If a
multimeter of sensitivity 4 k/volt and range Total rectifier drop = 2VF = 2 x 0.7V = 1.4 V
0-10 V is used for the purpose, what will be
the reading? 100 A
=
141.4 V1.4 V
0.637 RS +1000
R S = .

BY V.K MEHTA
78. An a.c. voltmeter uses a bridge rectifier with

silicon diodes and a PMMC instrument with
A. 6.88 V f.s.d. current of 75 A. if meter coil
B. 7.88 V resistance is 900 and the multiplier resistor
C. 8.88 V is 708 k, calculate the applied r.m.s. voltage
D. 9.88 V when the meter reads f.s.d.
ANSWER: C A. 40 V
Solution: B. 50 V
Resistance of meter C. 60 V
= 4 k x 10= 40 k D. 70 V
Total circuit resistance
= 40 k ||10 k +10 k ANSWER: C
Solution:
40 x 10 75 A
= + 10 = 8 + 10 = 18 k Peak f.s.d. meter current=
0.637
40+10
Now peak f.s.d current
20 V Peak applied voltageRectifier drop
Circuit current= = 1.11 mA =
18 k Total circuit resistance
Voltage read by multimeter= 8 k x1.11
mA=8.88 V Or
75 A
=
2 Vr.m.s2(0.7)
0.637 Rs+Rm
REFERENCE: PRINCIPLES OF Vr.m.s =

77. A PMMC instrument with a full-scale ELECTRONICS BY V.K MEHTA
deflection (f.s.d) current of 100 A and R m =
1 k is to be used as a voltmeter of range 0- 79. A multimeter has full scale deflection current
100 V (r.m.s). The diodes used in the bridge of 1 mA. Determine its sensitivity.

A. 10 /V Negative-AND gate is not the same as
B. 100 /V a NAND gate. Its truth table, actually,
C. 1000 /V is identical to a NOR gate:
D. 10, 000 /V
ANSWER: A
Solution:
Full scale deflection current, Ig = 1 mA
1 1
Multimeter sensitivity = = =
Ig 1 mA
1000 /V
ELECTRONICS BY V.K MEHTA REFERENCE: TEACH YOURSELF
ELECTRICITY AND ELECTRONICS BY STAN
80. The deflection sensitivity of a CRT is 0.01 GIBILISCO 4TH ED.
mm/V. Find the shift produced in the spot
when 400 V are applied to the vertical plates. 82. Suppose an AND gate is followed by an
inverter. Under what conditions is the output
A. 1 mm of the resulting black box low?
B. 2 mm
C. 3 mm A. If and only if both inputs are high
D. 4 mm B. If and only if both inputs are low
C. If and only if one input is high and the
ANSWER: D other is low
Solution: D. Under no conditions (the output is
Spot shift= deflection sensitivity x always high)
applied voltage
= 0.01 x 400= 4 mm ANSWER: A
REFERENCE: PRINCIPLES OF EXPLANATION: A variation on the idea of

ELECTRONICS BY V.K MEHTA the AND gate is called the NAND gate. The
word NAND is a verbal contraction of the
TOPIC: DIGITAL ELECTRONICS words NOT and AND. Essentially, a NAND
gate behaves the same as an AND gate with
81. TOPIC: DIGITAL ELECTRONICS a NOT (inverter) gate connected to the
output terminal. To symbolize this output
Suppose inverters are placed in series with signal inversion, the NAND gate symbol has
both inputs of an AND gate. Under what a bubble on the output line. The truth table
conditions is the output of the resulting black for a NAND gate is as one might expect,
box high? exactly opposite as that of an AND gate:
A. If and only if both inverter inputs
are high
B. If and only if both inverter inputs
are low
C. If and only if one inverter input is
high and the other is low As with AND gates, NAND gates are made
D. Under no conditions (the output is with more than two inputs. In such cases,
always low) the same general principle applies: the
output will be low (0) if and only if all
ANSWER: B inputs are high (1). If any input is low
EXPLANATION: A Negative-AND gate (0), the output will go high (1).
functions the same as an AND gate
with all its inputs inverted (connected
through NOT gates). In keeping with
standard gate symbol convention,
these inverted inputs are signified by
bubbles. Contrary to most peoples
first instinct, the logical behavior of a

REFERENCE: TEACH YOURSELF D. (-X)+(-Y) is equivalent to (X*Y)
GIBILISCO 4TH ED. ANSWER: D
EXPLANATION: Statements on either
83. In Boolean algebra, addition represents side of the equals sign in each case are
logically equivalent. When two
A. The logical NOT Operation statements are logically equivalent, it
B. The logical AND operation means that one is true if and only if (iff )
C. The logical OR operation the other is true. For example, the
D. The logical NAND operation statement X = Y means that X implies Y,
and also that Y implies X. Logical
ANSWER: C equivalence is sometimes symbolized by
EXPLANATION: Boolean algebra is a a double arrow with one or two shafts
system of mathematical logic using the (or). Boolean theorems are used
numbers 0 and 1 with the operations to analyze and simplify complicated
AND (multiplication), OR (addition), and logic functions. This makes it possible to
NOT (negation). Combinations of these build a circuit to perform a specific
operations are NAND (NOT AND) and digital function, using the smallest
NOR (NOT OR). This peculiar form of possible number of logic switches.
mathematical logic, which gets its name
from the nineteenth-century British
mathematician George Boole, is used in
the design of digital logic circuits.
REFERENCE: TEACH YOURSELF

GIBILISCO 4TH ED.
84. If the output to a logical inverter is low, it

means that REFERENCE: TEACH YOURSELF
A. Both of the two inputs are high GIBILISCO 4TH ED.
B. Both of the two inputs are low
C. The single input is high 86. Convert the decimal number 37 to its
D. The single output is low equivalent binary number.
ANSWER: C A. (101001)2
B. (100101)2
EXPLANATION: An inverter or NOT gate C. (100010)2
has one input and one output. It D. (101010)2
reverses the state of the input.
ANSWER: B
Solution:
Division Remainder
37/2=18 1
18/2=9 0
9/2=4 1
REFERENCE: TEACH YOURSELF 4/2=2 0
ELECTRICITY AND ELECTRONICS BY STAN 2/2=1 0
GIBILISCO 4TH ED. 1/2=0 1
85. DeMorgans Theorem states that, for all Therefore, (37)10 = ()

logical statements X and Y,
A. (X*Y) is equivalent to X+Y ELECTRONICS BY V.K MEHTA
B. X*Y is equivalent to (X+Y)
C. (-X)+(-Y) is equivalent to X*Y

87. Convert the decimal number 76 to octal Y= AB + AC + B + BC
equivalent.
Y= AB + AC + B (1+C)
A. (114)8
B. (141)8 Y= AB + AC + B * 1
C. (411)8
D. (414)8 Y= AB + AC + B
ANSWER: A Y= B + (A+1) + AC
Solution:
Division Remainder Y= B * 1 + AC
76/8=9 4
9/8=1 1 Y= B + AC
1/8=0 1
Therefore, (76)10 = ()
90. Simplify the given Boolean expression:
Y= (A + B + C) * (A + B)
88. Convert decimal number 423 to
A. Y= A + B
hexadecimal number
B. Y= AB
C. Y= A + B + C
A. (1B7)16
D. Y= ABC
B. (1C7)16
C. (1D7)16
ANSWER: B
D. (1A7)16
Solution: Y= (A + B + C) * (A + B)
ANSWER: D
= A*A + A * B + B * A + B * B + C * A + C * B
Solution:
Y = A + AB + AB + B + AC + BC
Division Remainder
423/16=26 7
= A + AB + B + AC + BC
26/16=1 10
1/16=0 1
= A+ B + AC + BC
Therefore, (423)10 = ()
= A (1 + C) + B (1 + C)
= A * 1+ B * 1
V.K MEHTA
Y=A+B
89. Using Boolean techniques, simplify the
following expression
Y= AB + A (B+C) +B (B+C)
V.K MEHTA
A. Y= A+BC
B. Y=C+AB
C. Y=B+AC TOPIC: OTHERS
D. Y= A+B+C
91. In the case of line regulation,
ANSWER: C
A. When the temperature varies, the
Solution: Y= AB + A (B+C) +B (B+C) output voltage stays constant
B. When the output voltage changes,
Y= AB + AB + AC + BB + BC the load current stays constant
C. When the input voltage changes,
Y= AB + AB + AC + B + BC the output voltage stays constant

D. When the load changes, the output switching type of voltage regulator than
voltage stays constant with the linear types because the
transistor is not always conducting.
ANSWER: C Switching regulator efficiencies can be
EXPLANATION: Two basic categories of greater than 90 %. Therefore, switching
voltage regulation are line regulation regulators can provide greater load
and load regulation. The purpose of line currents at low voltage than linear
regulation is to maintain a nearly regulators because the control
constant output voltage when the input transistor doesnt dissipate as much
voltage varies. The purposely of load power.
regulation is to maintain a nearly
constant output voltage when the load REFERENCE: ELECTRONIC DEVICES
varies. Conventional Current Version by
Conventional Current Version by 94. When the input to a particular voltage
THOMAS L. FLOYD 8th ED. regulator decreases by 5 V, the output
decreases by 0.25 V. The nominal output is
92. The basic difference between a series 15 V. Determine the line regulation in % V.
regulator and a shunt regulator is
A. 0. 222% V
A. The amount of current that can be B. 0. 333% V
handled C. 0. 444% V
B. The position of the control element D. 0. 555% V
C. The type of sample circuit
D. The type of error detector ANSWER: B
Solution:
ANSWER: B VOUT
( V
OUT )100%
EXPLANATION: A basic voltage consists line regulation = =
VIN
of a reference voltage source, an error (0.25 V15 V)
= . %
detector, a sampling element and a 5V
control device. Protection circuitry is
also found in most regulators. Two basic REFERENCE: ELECTRONIC DEVICES
categories of voltage regulators are Conventional Current Version by
linear and switching. Two basic types of THOMAS L. FLOYD 8th ED.
linear regulators are series and shunt. In
a linear series regulator, the control 95. Determine the output voltage for the
element is a transistor in series with the regulator in the given figure.
load. In a linear shunt regulator, the
control element is a transistors in
parallel with the load.

A. 6.2 V
B. 7.2 V
93. In a switching regulator, the control
C. 9.2 V
transistor is conducting
D. 10.2 V
A. Part of the time
ANSWER: D
B. All of the time
Solution:
C. Only when the input voltage
VREF = 5.1 the zener voltage
exceeds a set limit R2
D. Only when there is an overload VOUT = (1 + ) VREF
R1
10 k
ANSWER: A = (1 + ) (5.1 V) = .
10 k
EXPLANATION: A much greater
efficiency can be realized with a

REFERENCE: ELECTRONIC DEVICES secondary voltages are 11 000 V and 400 V
Conventional Current Version by THOMAS respectively and the core loss is 2.9 kW,
L. FLOYD 8th ED. assuming the power factor of the load to be
0.8. Calculate the efficiency on full load.
96. Determine the maximum current that the A. 98.3%

regulator in the figure below can provide to a B. 93.8%
load. C. 89.3%
D. 83.9%
ANSWER: A
Solution:
Full-load secondary current is,
5001000
= 1250A
400
Full-load primary current is,
500 1000
= 45.5 A
A. 0.7 A 11000
B. 0.8 A
C. 0.9 A Therefore secondary I2 R loss on full load
D. 0.10 A is,
(1250)2 0.0019 = 2969 W
ANSWER: A and primary I2R loss on full load is,
Solution: (45.5)2 0.42 = 870W
0.7 V 0.7 V Total I2R loss on full load
IL(max) = = = . = 3839 W = 3.84 kW
R4 1.0
and Total loss on full load
REFERENCE: ELECTRONIC DEVICES = 3.84 + 2.9 = 6.74 kW
Conventional Current Version by Output power on full load
THOMAS L. FLOYD 8th ED. = 500 0.8 = 400 kW
Input power on full load
97. In figure below, what power rating must R1 = 400 + 6.74 = 406.74 kW
have if the maximum input voltage is 12.5 V? Efficiency on full load is,
losses
=1
input power
6.74
(1 ) = 0.983 unit
406.74
= 98.3%
A. 5.10 W
REFERENCE: ELECTRICAL AND
B. 6.10 W
ELECTRONIC TECHNOLOGY 10TH
C. 7.10 W
EDITION BY HUGHES
D. 8.10 W
99. A 100 kVA transformer has 400 turns on the
ANSWER: C
primary and 80 turns on the secondary. The
Solution:
primary and secondary resistances are 0.3
VR1 = VIN VOUT = 12.5 V
and 0.01 respectively, and the
VR1 2 (12.5 V)2 corresponding leakage reactances are 1.1
PR1 = = = .
R1 22 and 0.035 respectively. The supply
voltage is 2200 V. Calculate the equivalent
REFERENCE: ELECTRONIC DEVICES impedance referred to the primary circuit.
THOMAS L. FLOYD 8TH ED. A. 2.50
B. 2.05
98. The primary and secondary windings of a 500 C. 5.02
kVA transformer have resistances of 0.42 D. 5.20
and 0.0019 respectively. The primary and

ANSWER: B REFERENCE: ELECTRICAL AND ELECTRONIC
Solution: TECHNOLOGY 10TH EDITION BY HUGHES

= 1 + 2 = 1 + 2 ( 1 )2
2
TOPIC: AC AND DC CIRCUITS
single resistance in the primary
circuit equivalent to the primary and 101. Suppose you double the voltage in a simple
secondary resistances of the actual dc circuit, and cut the resistance in half. The
transformer current will become:
400 2
A. Four times as great.
= 0.3 + 0.01( ) = 0.55 B. Twice as great.
80
C. The same as it was before.
D. Half as great
= 1 + 2 = 1 + 2 ( 1 )2 single
2
ANSWER: A
reactance in the primary circuit
Solution:
400 2
= 1.1 + 0.035( ) = 1.975 I = V/R
80
I = 2V/0.5R
= 2 + 2 equivalent impedance of the
I = 4 V/R
primary and secondary windingsreferred to the primary
circuit REFERENCE: TEACH YOURSELF ELECTRICITY AND
ELECTRONICS THIRD EDITION BY STAN GIBILISCO
= 0.552 + 1.9752 = .
102. A wiring diagram would most likely be found
REFERENCE: ELECTRICAL AND in:
ELECTRONIC TECHNOLOGY 10TH A. An engineers general circuit idea
EDITION BY HUGHES notebook.
B. An advertisement for an electrical
100. A single-phase transformer has 1000 turns device.
on the primary and 200 turns on the C. The service/repair manual for a radio
secondary. The no-load current is 3 A at a receiver.
power factor 0.2 lagging when the secondary D. A procedural flowchart.
current is 280 A at a power factor of 0.8
lagging. Calculate the power factor. Assume ANSWER: C
the voltage drop in the windings to be EXPLANATION: Wiring diagrams are
negligible. especially useful and necessary when you
must service or repair an electronic device
A. 0.78 lagging because it has the information needed like
B. 0.78 leading the value of the component used.
C. 0.87 lagging
D. 0.87 leading REFERENCE: TEACH YOURSELF ELECTRICITY
E. AND ELECTRONICS THIRD EDITION BY STAN
ANSWER: A GIBILISCO
Solution:
I2 1000 = 280 200 I2 = 56 A 103. A circuit has a total resistance of 473,332
ohmand draws 4.4 mA. The best expression
Cos 2 = 0.8 sin 2 = 0.6 for the voltage of the source is:
Cos 0 = 0.2 sin 0 = 0.98 A. 2082 V.
B. 110 kV.
I1 cos 1 = I2 cos 2 + I0 cos 0 C. 2.1 kV.
= (56 0.8) + (3 0.2) = 45.4 A D. 2.08266 kV.
I1 sin 1 = I2 sin 2 + I0 sin 0
= (56 0.6) + (3 0.98) = 36.54 A ANSWER: C
36.54
Tan 1 = = 0.805 Solution:
45.4
1 = 3850
cos 1 = cos 3850 = . V = IR
V = (4.4 mA)(473332 ohm)

V = 2.1 kV ANSWER: C
Solution:
REFERENCE: TEACH YOURSELF ELECTRICITY AND
ELECTRONICS THIRD EDITION BY STAN GIBILISCO P = IV = (8mA)(250V) = 2 W
104. Good engineering practice usually requires REFERENCE: TEACH YOURSELF ELECTRICITY
that a series-parallel resistive network be AND ELECTRONICS THIRD EDITION BY STAN
made: GIBILISCO
A. From resistors that are all very rugged.
B. From resistors that are all the same. 107. Four resistors are connected in series across
C. From a series combination of resistors a 6.0-V battery. The values are R1 = 10 ohm,
in parallel. R2 = 20 ohm, R3 = 50 ohm, and R4 = 100
D. From a parallel combination of ohmas shown in Figure below. The voltage
resistors in series. across R2 is:
ANSWER: B
EXPLANATION: By doing this, the total power
handling capacity of the resistance can be
greatly increased over that of a single resistor

AND ELECTRONICS THIRD EDITION BY STAN
GIBILISCO A. 0.18 V.
B. 33 mV.
105. You have an unlimited supply of 1-W, 1000 C. 5.6 mV.
ohmresistors, and you need a 500 D. 670 mV.
ohmresistance rated at 7 W or more. This ANSWER: D
can be done by assembling: Solution:
A. Four sets of two 1000 ohm resistors in
series, and connecting these four RT = 10+20+50+100 = 180
setsin parallel. IT = 60/180 =3.33 mA
B. Four sets of two 1000 ohm resistors in VR2 = 3.33mA (20) = 670 Mv
parallel, and connecting these four
setsin series. REFERENCE: TEACH YOURSELF ELECTRICITY
C. A 3 _ 3 series-parallel matrix of 1000-_ AND ELECTRONICS THIRD EDITION BY STAN
resistors. GIBILISCO
D. Something other than any of the
above. 108. For question number 7, the voltage across
R1+R3 is
ANSWER: A A. 10V
Solution: B. 20V
C. 25V
Power rating = 1W (no. of resistors) = 1W D. Is not important.
(4x2) = 8 W ANSWER: B
Solution:
Resistance = 1000(2)// 1000(2)//
1000(2)// 1000(2) = 500 ohm RT = 10+20+50+100 = 180
IT = 60/180 =3.33 mA
REFERENCE: TEACH YOURSELF ELECTRICITY VR1+R3 = 3.33mA (10+50) = 20V
GIBILISCO REFERENCE: TEACH YOURSELF ELECTRICITY
106. The voltage is 250 V and the current is 8.0 GIBILISCO
mA. The power dissipated by
thepotentiometer is: 109. The maximum voltage output from a voltage
A. 31 mW. divider:
B. 31 W. A. Is a fraction of the power supply
C. 2.0 W. voltage.
D. 2.0 mW. B. Depends on the total resistance.
C. Is equal to the supply voltage.

D. Depends on the ratio of resistances. B. Has a slow rise time and a fast decay
ANSWER: D time.
Solution: C. Has equal rise and decay rates.
Vb = V(Rb)/Ra+Rb D. Rises and falls abruptly.
Vb = V(Rb)/Ra+Rb
The voltage output depends ANSWER: C
EXPLANATION: The positive-going slope is the
on the ratio of .
+
same as the negative-going slope. This is
calletriangular wave.
AND ELECTRONICS THIRD EDITION BY STAN REFERENCE: TEACH YOURSELF ELECTRICITY
GIBILISCO AND ELECTRONICS THIRD EDITION BY STAN
GIBILISCO
110. Bleeder resistors:
A. Are connected across the capacitor in a 113. In a 117-V utility circuit, the peak voltage is:
power supply. A. 82.7 V.
B. Keep a transistor from drawing too B. 165 V.
much current. C. 234 V.
C. Prevent an amplifier from being D. 331 V.
overdriven. ANSWER: B
D. Optimize the efficiency of an amplifier.
Solution:
Utility voltage = rms = 0.707 Vp
ANSWER: A
Vp = 165 V
EXPLANATION: It is connected across the
capacitor to drain the stored voltage so that
servicing the supply is not dangerous.
GIBILISCO
114. If a 175-V dc source were connected in series
GIBILISCO
with the utility mains from astandard wall
outlet, the result would be:
111. Suppose a 1-K ohmresistor will dissipate 1.05
A. Smooth dc.
W, and you have many 1-W resistors of all
B. Smooth ac.
common values. If theres room for 20-
C. Ac with one peak greater than the
percent resistance error, the cheapest
other.
solution is to use:
D. Pulsating dc
A. Four 1 K ohm, 1-W resistors in series-
ANSWER: D
parallel.
B. Two 2.2 K ohm, 1-W resistors in EXPLANATION: Ripples were caused by the
parallel. utility mains from a standard wall outlet.
C. Three 3.3 K ohm, 1-W resistors in
parallel. REFERENCE: TEACH YOURSELF ELECTRICITY
D. One 1 K ohm, 1-W resistor, since AND ELECTRONICS THIRD EDITION BY STAN
manufacturers allow for a 10-percent GIBILISCO
margin of safety.
ANSWER: B 115. If a wave has a frequency of 440 Hz, how
Solution: long does it take for 10 degrees of phase?
Power = 1W x 2 = 2W 20% = 1.6W to 2.4W A. 0.00273 second.
Resistance = 2.2k ohm // 2.2 K ohm = 1.1k B. 0.000273 second.
ohm 20% = 880 ohm to 1320 ohm C. 0.0000631 second.
Four 1 K ohm, 1-W resistors in series-parallel D. 0.00000631 second.
is the cheapest ANSWER: C
Solution:
REFERENCE: TEACH YOURSELF ELECTRICITY AND f(360/10) = 1/t
ELECTRONICS THIRD EDITION BY STAN GIBILISCO t = 1/(440Hz)(36) = 0.0000631 second
112. A triangular wave: REFERENCE: TEACH YOURSELF ELECTRICITY

A. Has a fast rise time and a slow decay AND ELECTRONICS THIRD EDITION BY STAN
time. GIBILISCO

116. A wave has a frequency of 300 kHz. One Pf = cos = R/Z = (50/88.4) x100 =
complete cycle takes: 56.6%
A. 1300 second
B. 0.00333 second REFERENCE: TEACH YOURSELF ELECTRICITY
C. 13,000 second AND ELECTRONICS THIRD EDITION BY STAN
D. 0.00000333 second GIBILISCO
ANSWER: D
Solution: 120. A circuit has apparent power= 100 kVa,
f = 1/t reactive power 60kVar. What is the quality
t= 1/ 300000 Hz = 0.00000333 second factor?
A. 0.6
REFERENCE: TEACH YOURSELF ELECTRICITY B. 1
AND ELECTRONICS THIRD EDITION BY STAN C. 0.75
GIBILISCO D. It cant be calculated from this data.
ANSWER: C
117. An RC circuit has a capacitance of 0.015 Solution:
microF. The resistance is 52 ohm. What is the R = 1002 602 = 80 W
phase angle at 90 kHz? Qf = tan = Q/R= 60/80 = 0.75
A. 24 degrees.
B. 0.017 degrees. REFERENCE: TEACH YOURSELF
C. 66 degrees. ELECTRICITY AND ELECTRONICS THIRD
D. None of the above. EDITION BY STAN GIBILISCO
ANSWER: C TOPIC: SEMICONDUCTORS INCLUDING DIODES AND

Solution: TRANSISTORS
Xc=1/2fC = 1/ 2 (90 kHz)(0.015 F) = 117.89 121. The amount of time between the creation of
a hole and its disappearance is called
= tan-1 (Xc/R) = tan-1 (117.89/52) = 66 A. Doping
degrees = -66 degrees because it is B. Lifetime
capacitive. C. Recombination
D. Valence
REFERENCE: TEACH YOURSELF ELECTRICITY ANSWER: B
AND ELECTRONICS THIRD EDITION BY STAN EXPLANATION: It is the duration of the
GIBILISCO creation of hole until it accept
electron.
118. A coil shows an inductive reactance of 200
at 500 Hz. What is its inductance? REFERENCE: ELECTRONIC DEVICES AND
A. 0.637 H. CIRCUITS THEORY 11THEDITION BY
B. 628 H. ROBERT L. BOYLESTAD
C. 63.7 mH.
D. 628 mH. 122. When a voltage is applied to a
ANSWER: C semiconductor, holes will flow
Solution: A. Away from the negative potential
B. Toward the positive potential
XL = 2fL; L= 200/2(500) = 63.7mH C. In the external circuit
REFERENCE: TEACH YOURSELF ELECTRICITY ANSWER: D
AND ELECTRONICS THIRD EDITION BY STAN EXPLANATION: Hole do not move,
GIBILISCO electrons move.
119. A series circuit has Z = 88.4 ohm, with R = REFERENCE: ELECTRONIC DEVICES AND
50.0 ohm. What is PF? CIRCUITS THEORY 11THEDITION BY
A. 99.9 percent. ROBERT L. BOYLESTAD
B. 56.6 percent.
C. 60.5 percent. 123. The absence of bias across a semiconductor
D. 29.5 percent. diode, the net flow charge is
ANSWER: B A. zero
Solution: B. high

C. infinite A. 22 V
D. None of the above B. -0.7 V
ANSWER: A C. -23.3 V
EXPLANATION: Under no bias condition, D. 0.7 V
the electron will not flow, therefore the net ANSWER: C
flow charge is zero. Solution:
REFERENCE: ELECTRONIC DEVICES AND Ideally, a negative dc value equal to the

CIRCUITS THEORY 11THEDITION BY ROBERT input peak less the diode is inserted by
L. BOYLESTAD the clamping circuit.
124. Determine the ripple factor for the filtered Vdc = -(Vp(in) 0.7 V)
bridge rectifier with a load as indicated in the Vdc = -(24V 0.7 V)
figure. Vdc = -23.3 V
A. 0.25 REFERENCE: ELECTRONIC DEVICES 7TH
B. 0.025 EDITION BY THOMAS L. FLOYD
C. 0.079
D. 0.7 126. When a 60 Hz sinusoidal voltage is applied to
ANSWER: C the input of a half-wave rectifier, the output
frequency is
A. 60 Hz
B. 120 Hz
C. 0 Hz
D. 30 Hz
ANSWER: A
Solution: Solution:
In have wave rectifier
n= 0.1 fin = fout = 60Hz
Vp(primary) = 1.414Vrms = 1.414(115V) = 163 V REFERENCE: ELECTRONIC DEVICES AND

CIRCUITS THEORY 11TH EDITION BY
Vp(secondary) = nVp(primary) = 0.1(163V) = 16.3 V ROBERT L. BOYLESTAD
Vp(rec) = Vp(secondary) 1.4 V = 14.9 V 127. When the peak output voltage is 100 V, the
PIV for each diode in a center-tapped full-
1 1
Vr(pp) = Vp(rec) = (120)2.2)(50 (14.9 V) = 1.13 V wave rectifier is (neglecting the diode drop)
)
1 A. 100 V
VDC=(1 )Vp(rec)=( 1
2 B. 141 V
1
)(14.9 V) = 14.3 V C. 200 V
(240)(2.2)(50)
D. 50 V
() 1.13
r= = = 0.079
14.3 ANSWER: C
Solution:
REFERENCE: ELECTRONIC DEVICES 7TH In center tapped full wave rectifier
EDITION BY THOMAS L. FLOYD PIV = 2Vp =2(100V) = 200V
125. What is the output voltage that you would
REFERENCE: ELECTRONIC DEVICES AND
expect to observe across RL in the circuit
CIRCUITS THEORY 11THEDITION BY ROBERT L.
shown below. Assume that RC is large
BOYLESTAD
enough to prevent significant capacitor
discharge. 128. The depletion region is created by
A. ionization
B. diffusion
C. recombination
D. all of the above

ANSWER: D CIRCUITS THEORY 11THEDITION BY
EXPLANATION: The region of uncovered ROBERT L. BOYLESTAD
positive and negative ions, diffusion and
recombination causes depletion region. 132. If the current gain is 200 and the collector
current is 100 mA, the base current is
CIRCUITS THEORY 11TH EDITION BY A. 0.5 mA
ROBERT L. BOYLESTAD B. 2 mA
C. 2A
129. A certain Zener diode has a maximum power D. 20 A
rating of 400 mW at 50C and a derating
factor of 3.2mW/C. Determine the ANSWER: C
maximum power the Zener can dissipate at a Solution:
temperature of 90C. Current gain = Ic/Ib
A. 272 mW Ib = 200(100mA) = 2A
B. 528 mW
C. 250 mW REFERENCE: ELECTRONIC DEVICES AND
D. 400 mW CIRCUITS THEORY 11THEDITION BY
ANSWER: A ROBERT L. BOYLESTAD
Solution:
PD(derated) = PD(max) (mW/C)T 133. Line regulation is determined by
PD(derated) = 400mW- (3.2
mW/C)(90C - 50C) A. zener current and load current
PD(derated) = 400 mW 128 mW B. changes in load resistance and output
PD(derated) = 272 mW voltage
C. load current
REFERENCE: ELECTRONIC DEVICES 7TH D. changes in output voltage and input
EDITION BY THOMAS L. FLOYD voltage
130. What is the PIV across each diode of a bridge ANSWER: D

rectifier with a secondary voltage of 20 V EXPLANATION: Line regulation the change
rms? in output voltage for a given change in
A. 14.1 V input (line) voltage, normally expressed as
B. 20 V a percentage.
C. 28.3 V
D. 34 V REFERENCE: ELECTRONIC DEVICES AND
ANSWER: C CIRCUITS THEORY 11TH EDITION BY
Solution: ROBERT L. BOYLESTAD
Vrms=PIV/0.707 134. For a certain 12 V Zener diode, a 10 mA

PIV= 20(0.707) = 28.3 V change in Zener current produces a 0.1 V
changes in Zener voltage. The Zener
REFERENCE: ELECTRONIC DEVICES AND impedance for this current ranges is
CIRCUITS THEORY 11THEDITION BY ROBERT L.
BOYLESTAD A. 0.1
B. 100
131. What is the most commonly used C. 10
semiconductor? D. 1
A. GaAs ANSWER: C
B. germanium Solution:
C. silicon Z = V/I = 0.1V/10mA = 10
D. gold
ANSWER: C CIRCUITS THEORY 11TH EDITION BY
EXPLANATION: It is abundant and ROBERT L. BOYLESTAD
cheaper than other semiconductor and
has good temperature characteristic. 135. The DC of a transistor is its

A. internal resistance 139. For a common-collector amplifier, RE = 100
B. power gain , Ic= 2.5 mA, and AC = 150. re = ?
C. voltage gain
D. current gain A. 10.33
ANSWER: D B. 10.33k
EXPLANATION: It is the ratio of collector C. 10
current to base current. D. 11
ANSWER: A
REFERENCE: ELECTRONIC DEVICES 7TH Solution:
EDITION BY THOMAS L. FLOYD re=26mV/Ie
AC = Ic/Ib
136. When operated in cutoff and saturation, the 150 = 2.5 mA/Ib
transistor acts like Ib = 16.67 microA.
Ie = Ic + Ib = 2.5 mA = 16.67 microA =
A. a switch 2.51667mA
B. a linear amplifier re=26mV/2.51667 mA
C. a variable capacitor re= 10.33 ohms
D. a variable resistor
ANSWER: A CIRCUITS THEORY 11TH EDITION BY
EXPLANATION: It is because in saturation ROBERT L. BOYLESTAD
and cut off, the output is on and off,
therefore acts as a switch. 140. A certain JFET data sheet gives VGS(off) = - 4
V. The pinch-off voltage, Vp,
REFERENCE: ELECTRONIC DEVICES 7TH
EDITION BY THOMAS L. FLOYD A. cannot be determined
B. is 4 V
137. Find the value of emitter current if collector C. depends on VGS
current = 3mA, alpha = 0.98. D. is + 4 V
A. 3.06 mA ANSWER: D
B. 2.98 mA Solution:
C. 6 mA Vp = - Vgs(off) = -(-4) = 4V
D. requires fewer components than all
the other methods REFERENCE: ELECTRONIC DEVICES 7TH
ANSWER: A EDITION BY THOMAS L. FLOYD
Solution:
Alpha = collector current / emitter current 141. A MOSFET differs from a JFET mainly because
Emitter current = 3mA/0.98 = 3.06
Ma A. of the power rating
B. the JFET has a pn junction
REFERENCE: ELECTRONIC DEVICES AND C. MOSFETs do not have a physical
CIRCUITS THEORY 11TH EDITION BY ROBERT L. channel
BOYLESTAD D. the MOSFET has two gates
138. If the dc emitter current in a certain ANSWER: B

transistor amplifier is 3 mA, the approximate EXPLANATION: MOSFET has no pn
value of re is junction instead a SG junction and they
are not the same.
A. 3
B. 3 k REFERENCE: ELECTRONIC DEVICES 7TH
C. 0.33 k EDITION BY THOMAS L. FLOYD
D. 8.33
142. A certain D-MOSFET is biased at VGS = 0 V.
ANSWER: D Its data sheet specifies IDSS = 20 mA and
VGS(off) = - 5 V. The value of the drain
REFERENCE: ELECTRONIC DEVICES 7TH current
EDITION BY THOMAS L. FLOYD

A. is 0 A EXPLANATION: D MOSFET with positive
B. is 10 mA Vgs is operating in E- mode because it is to
C. is 20 mA the right of vertical axis(Vgs=0).
D. cannot be determined
ANSWER: A EDITION BY THOMAS L. FLOYD
Solution:
Id = Idss(1-Vgs/Vp)2 146. In a certain common-source (CS) amplifier,
Id = 20mA (1-1) VDS = 3.2 V rms and VGS = 280 mV rms. The
Id = 0A voltage gain is
REFERENCE: ELECTRONIC DEVICES 7TH A. 1

EDITION BY THOMAS L. FLOYD B. 11.4
C. 8.75
143. Determine the magnitude of gm for a JFET D. 3.2
with IDSS = 8mA and Vp = -4V at Vgs = -0.5V. ANSWER: B
Solution:
A. 3mS Gain = VDS / VGS
B. 3.5mS Gain = 3.2V/280mV = 11.4
C. 2mS
D. Tomorrow REFERENCE: ELECTRONIC DEVICES 7TH
ANSWER: B
Solution: 147. A certain common-drain (CD) amplifier with
gmo = 2IDSS/|Vp|= 2(8mA)/4 = 4mS RS = 1.0 k has a transconductance of 6000
gm = gmo(1-Vgs/Vp) S. The voltage gain is
gm = 4mS (1 0.5/4)
gm = 3.5mS A. 1
B. 0.86
REFERENCE: ELECTRONIC DEVICES 7TH C. 0.98
EDITION BY THOMAS L. FLOYD D. 6
144. Determine the magnitude of gm for a JFET ANSWER: B

with IDSS = 8mA and Vp = -4V at Vgs = -1.5V. Solution:
1(6)
AV = = =
1+ 1+1(6)
A. 2.57mS
0.86
B. 3mS
C. 4mS
D. 1mS
ANSWER: A
Solution: 148. Determine the magnitude of gm for a JFET
gmo = 2IDSS/|Vp|= 2(8mA)/4 = 4mS with IDSS = 8mA and Vp = -4V at Vgs = -0.5V.
gm = gmo(1-Vgs/Vp) A. 3mS
gm = 4mS (1 1.5/4) B. 2.5mS
gm = 2.57mS C. 2mS
D. 1.5mS
REFERENCE: ELECTRONIC DEVICES 7TH ANSWER: D
EDITION BY THOMAS L. FLOYD Solution:
gmo = 2IDSS/|Vp|= 2(8mA)/4 = 4mS
145. An n-channel D-MOSFET with positive VGS is
gm = gmo(1-Vgs/Vp)
operating in
gm = 4mS (1 2.5/4) ; gm = 1.5mS
A. the depletion mode
B. cutoff
C. the enhancement mode
D. saturation 149. There is a _____ degrees of inversion
ANSWER: C between gate and drain voltages of an FET.
A. Zero

B. 90 153. The usual way to protect a load from
C. 180 excessive supply voltage is with a
D. 270 A. Crowbar
B. Zener diode
ANSWER: C C. Four-layer diode
EXPLANATION: Means that input is equal to D. Thyristor
negative output
REFERENCE: ELECTRONIC DEVICES 7TH ANSWER: A
EDITION BY THOMAS L. FLOYD EXPLANATION: Crowbar is a simple over-
voltage protection circuit. It uses a Zener
150. Two FET amplifier are cascaded. The first diode that monitor the DC output
stage has a voltage gain of 5 and the second voltage.
stage has a voltage gain of 7. The overall
voltage gain is REFERENCE: ELECTRONIC DEVICES 7TH
A. 35
B. 12
C. dependent on the second stage 154. Determine the gate current when the switch,
loading SW1 is momentarily closed in figure below.
D. 15 Assume VAK = 0.8V, VGK= 0.7V and IH = 20mA.
ANSWER: A
Solution:
AT = A1 A2
AT = 5x7
AT = 35
A. 4 mA
TOPIC: INDUSTRIAL AND POWER ELECTRONICS
B. 4.1 mA
151. Athyristor has C. 4.2 mA
D. 4.3 mA
A. two pn junctions
B. three pn junctions ANSWER: B
C. four pn junctions Solution:
D. only two terminals 30.7
= = = 4.1 mA
560
ANSWER: B
EXPLANATION: It is a four layer REFERENCE: ELECTRONIC DEVICES 7TH
semiconductor therefore three junctions were EDITION BY THOMAS L. FLOYD
formed.
155. For question no. 5, determine the anode
REFERENCE: ELECTRONIC DEVICES 7TH current.
EDITION BY THOMAS L. FLOYD A. 2 mA
B. 3 mA
152. The unijunction transistor acts as a C. 23.2 mA
A. Four-layer diode D. 24.2 mA
B. Diac
C. Triac ANSWER: C
D. Latch
ANSWER: D Solution:
EXPLANATION: It has only one pn junction
240.8
therefore act as a latch. = = = 23.2mA
1000
REFERENCE: ELECTRONIC DEVICES 7TH REFERENCE: ELECTRONIC DEVICES 7TH

EDITION BY THOMAS L. FLOYD EDITION BY THOMAS L. FLOYD

156. Determine the value of R1 in the figure that SCR.
will ensure power turn-on and turn-off the
UJT. The characteristic of the UJT exhibits the REFERENCE: ELECTRONIC DEVICES 7TH
following values: EDITION BY THOMAS L. FLOYD
159. Determine the value of the anode current in

the figure when rhe device is on. VBR(F) =
100V. Assume Vbe = 0.7V and VCE(sat) = 0.1V
for the internal.
A. 10mA
=0.5,
Vv=1 V, B. 109.2mA
C. 102.9mA
Iv=10 mA, Ip=20 A and Vp= 14 V. D. 100Ma
A. 800K,2.9K
B. 2.9K, 800K ANSWER: B
C. 3.1K, 800K Solution:
D. 800K, 3.1K Va=Vbe-VCE(sat) = 0.7 +0.1 = 0.8V
ANSWER: A VRs = Vbias Va = 110V-0.8V = 109.2V
IA = VRs/Rs = 109.2/1kohm = 109.2mA
Solution:

> 1 > EDITION BY THOMAS L. FLOYD

160. A 4-layer diode turns on when the anode to
30 14 30 1
> 1 > cathode voltage exceeds
20 10
A. 0.7 V
> > 2.9
B. the gate voltage
REFERENCE: ELECTRONIC DEVICES 7TH C. the forward-breakover voltage
EDITION BY THOMAS L. FLOYD D. the forward-blocking voltage
ANSWER: C
157. The data sheet of a certain UJT gives =0.6. EXPLANATION: It is like the threshold
determine the peak point emitter voltage Vp voltage in diode where the electron
if Vbb=20V. cannot flow without overcoming it.
A. 11V
B. 12V REFERENCE: ELECTRONIC DEVICES 7TH
C. 10V EDITION BY THOMAS L. FLOYD
D. 12.7V
TOPIC: MICROELECTRONICS INCLUDING OP AMPS
ANSWER: D
161. The open-loop gain of an op-amp is given at
Solution:
225,000. Find the gain in dB.
Vp = Vbb+Vd = 0.6(20V) + 0.7V =
A. 1070
12.7V
B. 107
C. 214
D. 10.7
ANSWER: B
158. An SCR can be turned off by Solution:
AdB = 20 log (225000) = 107
A. forced commutation REFERENCE: ELECTRONIC DEVICES 7TH EDITION
B. a negative pulse on the gate BY THOMAS L. FLOYD
C. anode current interruption
162. Determine the open loop gain of an Op-am
D. answer a, b and c
whose cut-off frequency is 100 Hz with a
midrange voltage gain of 100,000.
ANSWER: D
A. 7,071
EXPLANATION: A,B and C stops the
B. 707.1
conduction therefore turning off the
C. 70,710

D. 70.71 REFERENCE: ELECTRONIC DEVICES 7TH
ANSWER: C EDITION BY THOMAS L. FLOYD
Solution:
166. The output of a particular op-amp increases
8 V in 12 s. The slew rate is
A. 96 V/s
B. 0.67 V/ s
C. 1.5 V/s
D. none of the above
ANSWER: B
100 2 Solution:
AOL = = 100000/1 + ( ) = 70,710 Slew rate = V/s = 8/12 = 0.67 V/s
100
1+()2
EDITION BY THOMAS L. FLOYD 167. A certain inverting amplifier has anRi of 0.1
k and an Rf of 100 k. The closed loop gain
163. If the voltage gain for each input of a summing is
amplifier with a 4.8 kilo-ohm feedback resistor is
unity, the input resistors must have a value of A. 100,000
_____ kilo-ohm. B. 1000
A. 4.8 times the number of inputs C. 101
B. 48 D. 100
C. 4.8 divided by the number of inputs
D. 4.8 ANSWER: B
Solution:
ANSWER: D A=Rf/Ri = 100/0.1 = 1000
A = Rf/Rin
Rin = 1(4.8 k ohm) = 4.8 k-ohm REFERENCE: ELECTRONIC DEVICES 7TH
EDITION BY THOMAS L. FLOYD 168. The bandwidth of an AC amplifier having a
lower critical frequency of 1 kHz and an
164. CMRR stands for upper critical frequency of 10 kHz is
A. Common mode Reduction Ratio
B. Common mode Reflection Ratio A. 1 kHz
C. Common mode Restarting Ratio B. 9 kHz
D. Common mode Rejection Ratio C. 10 kHz
D. 11 kHz
ANSWER: D
EXPLANATION: Measure of op amp ability to ANSWER: B
reject common mode signals. Solution:
B= USF-LCF =10kHz-1kHz
REFERENCE: ELECTRONIC DEVICES 7TH B = 9kHz
EDITION BY THOMAS L. FLOYD REFERENCE: ELECTRONIC DEVICES 7TH
165. If Av(d) = 3500 and Acm = 0.35, the CMRR is
169. With zero volts on both inputs, an op-amp
A. 1225 ideally should have an output equal to
B. 10,000
C. 80 dB A. the positive supply voltage
D. answers b and c B. the negative supply voltage
C. zero
ANSWER: D D. the CMRR
CMRR = Av/Ac = 3500/0.35 = 10,000
CMRRdB = 20 log(3500/0.35) = 80 dB ANSWER: C
Solution:

Vo = Vi (Rf/Ri) then this current is doubled. The needle
Vo = 0 (Rf/Ri) = zero deflection:
A. Will decrease.
REFERENCE: ELECTRONIC DEVICES 7TH B. Will stay the same.
EDITION BY THOMAS L. FLOYD C. Will increase.
D. Will reverse direction.
170. The bandwidth of a dc amplifier having an
upper critical frequency of 100 kHz is ANSWER: C
EXPLANATION: Galvanometer measures
A. 100 kHz the current so the deflection of the
B. unknown needle is directly proportional to the
C. infinity increase in current.
D. 0 kHz
REFERENCE: TEACH YOURSELF
ANSWER: A ELECTRICITY AND ELECTRONICS THIRD
Solution: EDITION BY STAN GIBILISCO
B = cut-off frequency = 100kHz
REFERENCE: ELECTRONIC DEVICES 7TH 174. One important advantage of an electrostatic
EDITION BY THOMAS L. FLOYD meter is that:
A. It measures very small currents.
TOPIC: INSTRUMENTATION AND MEASUREMENTS B. It will handle large currents.
C. It can detect ac voltages.
171. The meter movement in an illumination D. It draws a large current from the
meter measures: source.
A. Current. ANSWER: C
B. Voltage. EXPLANATION:
C. Power. Electrostatic voltmeter utilizes the
D. Energy. attraction force between two charged
surfaces to create a deflection of a
ANSWER: A pointer directly calibrated in volts. Since
EXPLANATION: Also called light meter is the attraction force is the same
measured in terms of current because as regardless of the polarity of the charged
the light strikes the photovoltaic cell, surfaces (as long as the charge is
current is produced. opposite), the electrostatic voltmeter
can measure both direct
REFERENCE: TEACH YOURSELF current and alternating current.
ELECTRICITY AND ELECTRONICS THIRD
EDITION BY STAN GIBILISCO REFERENCE: TEACH YOURSELF
172. The change in the direction of a compass EDITION BY STAN GIBILISCO
needle, when a current-carrying wirebrought
near, is: 175. An ammeter shunt is useful because:
A. Electromagnetic deflection. A. It increases meter sensitivity.
B. Electrostatic force. B. It makes a meter more physically
C. Magnetic force. rugged.
D. Electroscopic force. C. It allows for measurement of a wide
range of currents.
ANSWER: A D. It prevents overheating of the meter.
EXPLANATION: Also called magnetic
deflection, whereas compass works by ANSWER: C
using magnetic characteristic of the EXPLANATION: An ammeter shunt allows
earth. the measurement of current values too
large to be directly measured by a
REFERENCE: TEACH YOURSELF particular ammeter.
EDITION BY STAN GIBILISCO REFERENCE: TEACH YOURSELF
173. Suppose a certain current in a galvanometer EDITION BY STAN GIBILISCO
causes the needle to deflect 20degrees, and

176. Voltmeters should generally have: the resistance goes down, and at short
A. Large internal resistance. circuit resistance is zero therefore results
B. Low internal resistance. in full scale reading.
C. Maximum possible sensitivity.
D. Ability to withstand large currents. REFERENCE: ELECTRONIC DEVICES 7TH
ANSWER: A
EXPLANATION: If you make the internal 180. The most accurate type of test equipment
resistance very large, then the current used for measuring high power is the _____.
flowing through the voltmeter will be A. Bolometer
negligible, and the voltage drop across B. Wavemeter
the resistor will not change. C. Calorimeter
D. Wattmeter
REFERENCE: TEACH YOURSELF ANSWER: A
ELECTRICITY AND ELECTRONICS THIRD EXPLANATION: A bolometer consists of
EDITION BY STAN GIBILISCO an absorptive element, such as a thin
layer of metal, connected to a thermal
177. A utility meters readout indicates: reservoir (a body of constant
A. Voltage. temperature) through a thermal link.
B. Power.
C. Current. REFERENCE: ELECTRONIC DEVICES 7TH
D. Energy. EDITION BY THOMAS L. FLOYD
ANSWER: D
EXPLANATION: Utility meter is used TOPIC: DIGITAL ELECTRONICS
for metering devices used on utility
mains. 181. The bit storage capacity of a Read Only
Memory(ROM) with a 512 x 8 organization is
REFERENCE: TEACH YOURSELF _____ bits.
ELECTRICITY AND ELECTRONICS THIRD A. 1024
EDITION BY STAN GIBILISCO B. 8192
C. 4096
178. A VU meter is never used for measurement D. 2048
of: ANSWER: C
A. Sound. Solution:
B. Decibels. Bit storage capacity = 512x8 = 4096
C. Power. REFERENCE: ELECTRONIC DEVICES AND
D. Energy. CIRCUITS THEORY 11TH EDITION BY ROBERT L.
ANSWER: D BOYLESTAD
EXPLANATION: VU meter device 182. The symbols 1, 2 and 3 through 9 are what
displaying a representation of type of numerals?
the signal level in audioequipment and A. Boolean
not energy. B. Roman
C. Binary
REFERENCE: TEACH YOURSELF D. Arabic
ELECTRICITY AND ELECTRONICS THIRD ANSWER: D
EDITION BY STAN GIBILISCO EXPLANATION: Arabic Numerals is the
most common system for the symbolic
179. A measuring device which will result to full representation of numbers in the world
scale reading at shorted terminal condition today.
A. Voltmeter
B. Ammeter REFERENCE: ELECTRONIC DEVICES AND
C. Electrostatic meter CIRCUITS THEORY 11TH EDITION BY ROBERT
D. Ohmmeter L. BOYLESTAD
183. The value of the decimal number 23 in binary
ANSWER: D form is:
EXPLANATION: Ohmmeter measures A. 1011.
resistance which is the opposition to B. 110111.
current. The scale start to deflect when C. 10111.

D. 11100.
ANSWER: C 187. Data sent along a single line, one bit after
Solution: another, is called:
23/2=11 1 A. Serial.
11/2 =5 1 B. Synchronous.
5/2 = 2 1 C. Parallel.
2/2=1 0 D. Asynchronous.
1/2=.5 1 ANSWER: A
Answer = 10111 EXPLANATION: Serial communication is the
process of sending data one bit at a time,
REFERENCE: TEACH YOURSELF ELECTRICITY sequentially, over a communication
AND ELECTRONICS THIRD EDITION BY STAN channel or computer bus.
GIBILISCO REFERENCE: TEACH YOURSELF ELECTRICITY
184. The binary number 110001 represents the GIBILISCO
digital number:
A. 49. 188. An advantage of a J-K over an R-S flip-flop is
B. 25. that:
C. 21. A. The J-K flip-flop is faster.
D. 13. B. The J-K can attain more states.
C. The J-K always has predictable outputs.
ANSWER: A D. No! An R-S flip-flop is superior to a J-K.
Solution: ANSWER: C
25 + 24+ 20 = 32+16+1=49 EXPLANATION: The main difference
between a JK flip-flop and an R-S flip-flop is
REFERENCE: TEACH YOURSELF ELECTRICITY that in the JK flip-flop, both inputs can be
AND ELECTRONICS THIRD EDITION BY STAN HIGH. When both the J and K inputs are
GIBILISCO HIGH, the Q output is toggled, which means
that the output alternates between HIGH
185. The fifth digit from the right in a binary and LOW. Thereby the invalid condition
number carries a decimal value of: which occurs in the R-S flip flop is
A. 64. eliminated.
B. 32.
C. 24. REFERENCE: TEACH YOURSELF ELECTRICITY
D. 16. AND ELECTRONICS THIRD EDITION BY STAN
ANSWER: D GIBILISCO
Solution:
11111 189. The inputs of an R-S flip-flop are known as:
24+23+ 22+21 + 20 A. Low and high.
24 = 16 B. Asynchronous.
REFERENCE: TEACH YOURSELF ELECTRICITY C. Synchronous.
AND ELECTRONICS THIRD EDITION BY STAN D. Set and reset.
GIBILISCO ANSWER: D
EXPLANATION: The set is the high state and
186. The largest possible decimal number that can it holds the value until reset to low by a
be represented by six binary digits (bits) is: signal at the reset input.
A. 256.
B. 128. REFERENCE: TEACH YOURSELF ELECTRICITY
C. 64. AND ELECTRONICS THIRD EDITION BY STAN
D. 63. GIBILISCO
ANSWER: D
Solution: 190. A frequency synthesizer makes use of
111111 A. An OR gate.
25 + 24+23+ 22+21 + 20= 63 B. A divider.
C. The octal numbering system.
REFERENCE: TEACH YOURSELF ELECTRICITY D. The hexadecimal numbering system.
AND ELECTRONICS THIRD EDITION BY STAN ANSWER: B
GIBILISCO

EXPLANATION: Divider is used tomake the EXPLANATION: Revolving joint is generally
frequency synthesizer programmable. known as V Joint. Here, the output link
REFERENCE: TEACH YOURSELF ELECTRICITY axis is perpendicular to the rotational axis,
AND ELECTRONICS THIRD EDITION BY STAN and the input link is parallel to the
GIBILISCO rotational axes. As like twisting joint, the
output link spins about the input link.
OTHERS
REFERENCE:
191. The computer worm that infected computer http://www.roboticsbible.com/robot-links-
systems world-wide in 10 minutes, making it and-joints.html
the fastest computer virus ever known is
called _____. 194. An android takes the form of:
A. Claw Hammer A. An insect.
B. Sledge Hammer B. A human body.
C. SQL Hammer C. A simple robot arm.
D. SARS Virus D. Binocular vision.
ANSWER: C
EXPLANATION: SQL Slammer is a computer ANSWER: B
worm that caused a denial of service on EXPLANATION: It looks like a human body
some Internet hosts and dramatically slowed down because android is labeled as a boy.
general Internet traffic, starting at 05:30 UTC on
January 25, 2003. It spread rapidly, infecting most REFERENCE: ELECTRONIC DEVICES 7TH
of its 75,000 victims within ten minutes. EDITION BY THOMAS L. FLOYD
195. According to Asimovs three laws, under
REFERENCE: "ISS SECURITY BRIEF: MICROSOFT SQL what circumstances is it all right for a robot
SLAMMER WORM PROPAGATION". ISSFORUM. 25 to injure a human being?
JANUARY 2003. RETRIEVED 2008-11-29. A. Never.
B. When the human being specifically
192. In a robotic system, how many degrees of requests it.
freedom are there? C. In case of an accident.
A. Four D. In case the robot controller is infected
B. Six with a computer virus.
C. Three ANSWER: A
D. Two EXPLANATION: It is said in all 3 rules that a
ANSWER: B robot cannot harm a human no matter
EXPLANATION: 6 degrees of freedom is what the circumstances is.
the minimum needed to reach a volume
of space from every angle. The longer the REFERENCE: ELECTRONIC DEVICES 7TH
arm, the greater the volume that can be EDITION BY THOMAS L. FLOYD
reached. More than 6 joints and the 196. A manipulator is also known as a:
robot becomes kinematically redundant A. Track drive.
it can reach the same spot at the same B. Robot arm.
angle in more than one way. For C. Vision system.
example, you can pinch your nose and D. Robot controller.
wiggle your elbow at the same time. ANSWER: B
REFERENCE: EXPLANATION: Robot arm is a mechanical
https://www.marginallyclever.com/2014 arm, usually programmable which is
/02/what-are-the-six-degrees-of- analogous to human arm and also called
freedom-in-a-robot-arm/ manipulator.
193. In a robots, he axis that allows rotation are
often referred to as _____ joints REFERENCE: TEACH YOURSELF ELECTRICITY
A. Revolving AND ELECTRONICS THIRD EDITION BY STAN
B. Revolute GIBILISCO
C. Resolute
D. Rotary 197. An android is well suited for operation in:
A. Extreme weather conditions.
ANSWER: A B. Total darkness.
C. An assembly line.

D. An environment with children. C. Three dimensions.
ANSWER: D D. Four dimensions.
EXPLANATION: Android is a robot with its ANSWER: C
body shape built to resemble the human EXPLANATION: Spherical
body. coordinates (r, , ) as commonly used
in physics (ISO convention): radial
REFERENCE: TEACH YOURSELF ELECTRICITY distance r, polar angle (theta), and
AND ELECTRONICS THIRD EDITION BY STAN azimuthal angle (phi). The symbol (rho)
GIBILISCO is often used instead of r.
198. What is the peak download and peak upload REFERENCE: TEACH YOURSELF ELECTRICITY
of LTE- advanced? AND ELECTRONICS THIRD EDITION BY STAN
A. 1000Mbps and 500Mbps GIBILISCO
B. 5000Mbps and 1000Mbps
C. 500Mbps and 250Mbps
ANSWER: A
EXPLANATION: ItsCoordinated Multi-point
Transmission will also allow more system
capacity to help handle the enhanced data
speeds

GIBILISCO
199. Rodney Brooks is best known for his work

with:
A. Epipolar navigation.
B. Binocular vision.
C. Range sensing and plotting.
D. Insect robots
ANSWER: D
EXPLANATION: He is an
Australian roboticist, Fellow of the
Australian Academy of Science, author, and
robotics entrepreneur, most known for
popularizing the actionist approach to
robotics. He was a Panasonic Professor of
Robotics at the Massachusetts Institute of
Technology and former director of the MIT
Computer Science and Artificial Intelligence
Laboratory. He is a founder and former
Chief Technical Officer of iRobot and co-
Founder, Chairman and Chief Technical
Officer of Rethink Robotics (formerly
Heartland Robotics).

GIBILISCO
200. Spherical coordinates can uniquely define

the position of a point inup to:
A. One dimension.
B. Two dimensions.

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TOPIC: AC/DC CIRCUITS

Multiplying equation (2) by 3 and equation (3)

Solution: 3. Using Nodal analysis, calculate the voltages

REFERENCE: TEACH YOURSELF ELECTRICITY

From equation (2), by multiplying each term by 21,

Rogelyn L. Barbosa| BS ECE

P.F= cos ; P.F= cos (0) =

REFERENCE: TEACH YOURSELF ELECTRICITY REFERENCE: GROBS BASIC ELECTRONICS 11TH

8. A 10 R is in parallel with a 15- XL . The

Rogelyn L. Barbosa| BS ECE

REFERENCE: GROBS BASIC ELECTRONICS 11TH ANSWER: A

P = VI cos = (50 V)(2A) cos(53.13) = .

REFERENCE: GROBS BASIC ELECTRONICS 11TH

10. A parallel ac circuit with 120 Vac applied has

Rogelyn L. Barbosa| BS ECE

REFERENCE: GROBS BASIC ELECTRONICS 11TH

12. TOPIC: AC/DC CIRCUITS A. 182

=R + j(XL XC ) = 6 + j(10 12) = ANSWER: D

REFERENCE: BOYLESTAD INTRODUCTORY = 25 H

Rogelyn L. Barbosa| BS ECE

REFERENCE: GROBS BASIC ELECTRONICS 11TH

ANSWER: B 21. The term semiconductor arises from:

Rogelyn L. Barbosa| BS ECE

Rogelyn L. Barbosa| BS ECE

A. The junction will be destroyed.

A. Charge carriers flow continuously.

Rogelyn L. Barbosa| BS ECE

ANSWER: D REFERENCE: TEACH YOURSELF ELECTRICITY

Rogelyn L. Barbosa| BS ECE

33. In the practical diode model, The frequency of a full-wave

Rogelyn L. Barbosa| BS ECE

A. Vr = 8.33 V; VDC = 25.8 V REFERENCE: ELECTRONIC DEVICES

Rogelyn L. Barbosa| BS ECE

A. the power supply or battery polarity

A. Positive with respect to the emitter A. Linear amplifier

EXPLANATION: The heavily doped n-type EXPLANATION: A transistor can be operated

Rogelyn L. Barbosa| BS ECE

drain to source. VGG sets the reverse-bias

Rogelyn L. Barbosa| BS ECE

49. Determine the dc input resistance looking in

50. Find VDS and VGS in Figure below. For the

Rogelyn L. Barbosa| BS ECE

A. VDS = 10 V ; VGS = 1.1 V

Rogelyn L. Barbosa| BS ECE

SCRs are frequently used to control ANSWER: B

Rogelyn L. Barbosa| BS ECE

Rogelyn L. Barbosa| BS ECE

Rogelyn L. Barbosa| BS ECE

A. ACM =0.0081 and CMRR dB = 80.8

Rogelyn L. Barbosa| BS ECE

C. ACM = 0.5 ; CMRR dB = 48.09 dB

D. ACM = 0.25 ; CMRR dB =

Rogelyn L. Barbosa| BS ECE

TOPIC: INSTRUMENTATION AND MEASUREMENTS ANSWER: C

72. A Voltmeter is connected in ____with the ANSWER: B

Rogelyn L. Barbosa| BS ECE

REFERENCE: PRINCIPLES OF ELECTRONICS

78. An a.c. voltmeter uses a bridge rectifier with

REFERENCE: PRINCIPLES OF Vr.m.s =

Rogelyn L. Barbosa| BS ECE

REFERENCE: PRINCIPLES OF EXPLANATION: A variation on the idea of

Rogelyn L. Barbosa| BS ECE

REFERENCE: TEACH YOURSELF

84. If the output to a logical inverter is low, it