Documentos de Académico
Documentos de Profesional
Documentos de Cultura
Semiconductors
Effective for Energy Savings
in an AC-DC Converter
Features
Built-in 500 V high-voltage JFET (junction field-effect transistor).
Low switching frequency during light load operation. Power supply
input power of 60 to 140 mW realized during unloaded operation.
(80 to 264 V AC, unloaded operation at approximately 1 kHz)
Quasi-resonant control. Low noise and high efficiency at maximum
Block diagram 130 kHz operation.
Auto-restart type overload protection
(Repeated operation of 0.2 s ON / 1.5 s OFF)
Falling-edge Startup Excellent MOSFET driving capability (Output stage: High-side 17 ,
Startup current
Low-side 3.5 ). Can be used in a 200 W quasi-resonant power supply.
detection current
1-shot pulse control circuit supply
circuit oscillation circuit
circuit
(380 ns)
Wide range of VCC operating voltages: 10 to 28 V. Auxiliary winding
Internal trigger
oscillation Clear does not require a series regulator.
timer (5 s)
Soft-start function (1 ms fixed)
5V
Reset Max. frequency Low voltage
VCC pin provided with 28 V, with overvoltage timer latch protection.
blanking
50 A protection circuit
timer
5 V output
Frequency
reduction
check
circuit
5V
generator Example application circuit
max. 130 kHz
9.85 V/
5V 9.1 V
Power supply
for internal
control
20 k Output
circuit
Current
comparator
125
k
125 1V
k
Soft-start Overvoltage detection 2
voltage
generator (1 ms)
8V
Switching turn-off Timer-
0.4 V level detection Timer latch
190 ms (48 s)
1,510 ms
Reset
Overload detection 28 V Overvoltage detection 1
3.3 V
CONTENTS
Cover photo:
Portable electronic equipment
such as digital cameras, digital Lead-free IGBT Modules 58
video cameras, and cellular phones
have advanced year-by-year toward
smaller size and greater multi-func-
tionality. Smaller size and lower
power consumption are also re-
quired in the DC-DC converters
used to control the power supplies Micro DC-DC Converter 62
in this type of equipment.
Responding to these market re-
quests, Fuji Electric has developed
and commercialized micro DC-DC
converters equipped with an inte-
grated control IC and inductor. Re-
alizing the compact dimensions of Two-channel Current Mode Synchronous Buck Regulator Control IC 66
3.5 mm 3.5 mm, and having a
maximum thickness of 1 mm, these
new products will facilitate the min-
iaturization of portable electronic
equipment to much smaller sizes
than in the past.
The cover photo contrasts a mi- Quasi-resonant Controller IC 70
cro DC-DC converter, the front of
which shows an inductor made of a
ferrite base, with a honeybee to con-
ceptually illustrate the compact size
of the micro DC-DC converter.
25
consumption (trillion kWh)
2nd generation 3rd generation 4th generation 5th generation 6th generation
Product changes 1st generation
L, F series J, N series S series T, U series V series
Figure of merit
Inverter loss
350 W 280 W 218 W 194 W 160 W < 140 W
(example of 1,200 V,
300 A model)
Figure of merit
representing size
100 100 71 71 43 < 35
Chip area
(example of 1,200 V
model)
Device technology PT NPT FS Advanced FS
Device structure
Gate structure Planar DMOS Trench gate
PIM
ness have both been realized, and by using an anode the large-current series to 3,600 A, started to provide
structure known as a SAS (shallow anode structure) custom designed IGBT modules for hybrid vehicles,
that suppresses carrier injection, the performance of and advanced the commercialization of reverse-
the FWD (free wheeling diode) has also been improved. blocking IGBT modules for matrix converter use. Fuji
In the example of the 1,200 V series, approximately Electric is committed to continuing to expand the
20 % lower loss and approximately 40 % smaller chip voltage and current range of high-power IGBT mod-
area as compared to the 4th generation IGBT modules ules, to achieve even smaller size and lower cost in
have been realized in the case of 6 kHz inverter low-power IGBT modules, and to actively support new
operation. In the upcoming 6th generation V-series, applications.
additional improvements to the device structure (ad- When considering the future of power modules, the
vanced FS structure) and an improved gate structure most important issue is when to make the transition
are planned to further reduce power loss and shrink from silicon (Si) devices such as IGBTs to compound
the chip size, and FWD improvements are also planned semiconductor devices such as silicon carbide (SiC)
at this time. 1,200 V models of the V-series are slated devices. Fuji Electric estimates that the transition of
for release in fiscal year 2006, and 600 V models for power modules to SiC technology will occur at the time
fiscal year 2007. of the 7th or 8th generation. SiC wafer technology has
As its IGBT module lineup, Fuji Electric first made steady progress in reducing defect density and
began supplying a standard module series, but then developing larger diameter wafers. By the time when
with the 2nd generation of modules, added an IPM the 7th generation is released in 2009 or 2010, a killer
(intelligent power module) and PIM (power integrated defect density of less than 10 cm-2 may be achieved for
module) series and with the 3rd generation dramatical- the 4-inch wafers needed to mass-produce 5 mm chips.
ly increased the number of types of models, and then However, the cost of SiC wafers presents an extremely
with the 4th generation, added a small-size low-cost large challenge. Even with the assumption of other
EconoPACK*1 series. With the 5th generation, Fuji improvements such as the realization of smaller pack-
Electric added a 1,700 V series of modules, expanded age sizes as a result of the effective utilization of the
smaller chip size, and the realization a large increase
*1: EconoPACK is a trade mark of Eupec GmbH. Warstein. in the maximum rated junction temperature, the price
Fig.3 Changes in performance and technology of Fuji Electrics power MOSFET modules
Quasi-plane junction
Device technology Planar DMOS Super-junction
DMOS
1st generation 2nd generation 3rd generation 4th generation 5th generation 6th generation
60 V product changes
(FAP-1 series) (FAP-3A series) (FAP-3B series) (FAP-T1 series) (FAP-T2 series) (FAP-T3 series)
Ron Qgd 800 mnC 540 mnC 260 mnC 175 mnC 125 mnC 90 mnC
Ron A 3.5 mcm2 2.3 mcm2 1.4 mcm2 0.8 mcm2 0.65 mcm2 0.5 mcm2
Quasi-plane
Device technology Planar DMOS Quasi-plane junction trench
junction DMOS
Product changes 1st generation (standard series) 2nd generation (application-specific series)
ruggedness, high short-circuit withstand capability, current capacity of these products and to expand the
high breakdown voltage of the gate, high power-cycling lineup of available packages.
capability) of the 4th generation. In the upcoming 6th
generation, we plan to further optimize the trench gate 4. Power ICs
structure and the quasi-plane junction technology to
realize smaller design rules, while maintaining the 4.1 Power ICs for automotive-use
trends towards improved performance and smaller Fuji Electric supplies many series of power ICs.
size. Automotive-use power ICs include single-chip and
hybrid igniters for ignition, IPS (intelligent power
3.2 LLDs and SBDs switches) for driving the solenoid valves of an electron-
Figure 4 shows historical performance improve- ic transmission controller, smart power MOSFETs for
ments and expansion of the series of Fuji Electrics driving solenoid valves in ABS (antilock brake sys-
LLDs and SBDs. LLDs are used primarily in the tems) and ESC (electronic stability control) systems
secondary-side rectification of switching-mode power and for driving lamps, and integrated power ICs for
supplies and in power-factor control circuits, and the integrating multiple I / O channels in ECU (electronic
200 to 600 V standard series and the 600 V SuperLLD control units).
series are presently the flagship models. The Super-
LLD series contains a low switching loss series for use 4.2 Power ICs for power management systems and IT
with continuous conduction mode PFC (power-factor equipment
control) and a low conduction loss series for use with As power ICs for power management systems of IT
discontinuous conduction mode PFC. In the future, we equipment, Fuji Electric is focusing on power IC for
plan to expand the rated current and voltage ranges of power systems (hereafter referred to as power supply
our LLDs. ICs). Figure 5 shows the historical changes in perfor-
SBDs are used primarily in DC-DC converters and mance and technology of Fuji Electrics power supply
in the secondary-side rectification of switching-mode ICs. Fuji Electrics latest generation of power supply
power supplies, and the 120 to 250 V rated high- ICs is its 4th generation 0.6 m CDMOS (complimenta-
voltage SBDs and the 40 to 100 V rated low-reverse- ry double diffused MOS). With an optimized structure
leakage-current (low IR) SBDs are presently the flag- and advanced design rule, the lateral DMOS achieves
ship models. The high-voltage SBDs use newly an approximate 17 % improvement in RonQgd and an
developed barrier metals to realize higher voltage and, approximate 25 % improvement in Ron A compared to
at the same time, reduced leakage current and lower the 3rd generation products. In the upcoming 5th
switching noise. By using these high-voltage SBDs in generation, we plan to transition to a CTMOS (comple-
applications in which 200 to 400 V LLDs had been mentary trench lateral power MOS) device that con-
used previously, lower loss and lower noise can be tains a TLPM (trench lateral power MOS) integrated
achieved. As expected, by using newly developed into its output stage, and expect an additional approxi-
barrier metals, low- IR SBDs can reduce leakage cur- mate 40 % improvement in RonQgd and approximate
rent to approximately one-tenth that of conventional 67 % improvement in Ron A. Power supply ICs are
SBDs, and can be used at junction temperatures of up either for AC-DC use or for DC-DC use. AC-DC power
to 150C, and are therefore especially effective in supply ICs include AC-DC driver ICs, single-chip
applications where the heat radiation is poor such as power ICs with an integrated high-voltage output
in AC adapters. In the future, we plan to increase the power MOSFET, and M-power series for high-current
Product changes
Power ICs for power management systems
1st generation 2nd generation 3rd generation 4th generation 5th generation
Power supply IC
Ron Qgd
200 mnC 120 mnC 90 mnC 60 mnC
30 V
Ron A
300 mmm2 78 mmm2 60 mmm2 20 mmm2
of IT equipment
30 V
High-voltage High-current
DC-DC
Short-circuit
5 s 15 s
withstand capability
Fig.6 Fuji Electrics DC-DC (micro DC-DC converter) that will DC-DC converter is especially effective in achieving
contribute to the smaller size and lighter weight of smaller size and lighter weight in portable electronic
portable electronic equipment
equipment. This is one of the products that Fuji
Electric intends to promote the most.
Kouichi Haraguchi
Shuji Miyashita
Yuichi Onozawa
Emitter Emitter
3.3
Rs
Ch1 VCE (200 V / div) Ch3 VGE (20 V / div) Ch1 VCE (200 V / div) Ch3 VGE (20 V / div)
Ch2 IC (250 A / div) Time 200 ns / div Ch2 IC (250 A / div) Time 200 ns / div
EON 54.200 (mJ/pulse) EON 31.900 (mJ/pulse)
P P
33
Ch1 VCE (200 V / div) Ch3 VGE (20 V / div) Ch1 VCE (200 V / div) Ch3 VGE (20 V / div)
N drift N drift Ch2 IC (250 A / div) Time 1.00 s / div Ch2 IC (250 A / div) Time 1.00 s / div
EON 304.000 (mJ / pulse) EON 195.700 (mJ / pulse)
1,200
Fig.2 Relation between IGBT capacitance and turn-on VGE = 15 V
characteristic
1,000
Collector current IC (A)
800
VGE 25C
600
VCE t2 RG Cres 125C
IC
Lower 400
EMI noise
RG
200
Lower loss
t1 RG Cies 0
0 1 2 3 4
t1 t2
Collector-emitter voltage VCE (V)
1,000
1,200 120
Forward current IF (A)
VCC = 600 V
1,000 IF = 5 A 100 800
Tj = Room 25C
800 temperature 80 125C
VAK 600
600 60
VAK (V)
IAK (A)
400 40 400
200 20
IAK 200
0 0
-200 -20 0
0 1 2 3 4
-400 -40 Forward voltage VF (V)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
t (s)
U4-FWD low-current reverse recovery
Simulation
Fig.8 EMI noise-generating mechanism and simplified
Sample: 1,200 V / 450 A module measurement method
Conditions: IF = 10 A, RG = 3.3
Search coil
R VS
VAK
LS Turn-on waveform
OA +VDC
IAK IC2
Coes1 VCE1 IL
Load
VDC VCE
Id1
VCE
OV 0
CS Id1
VCE2
i VS
50 A / div, 200 V / div, 0.1 s / div 0
Coes2 IC2 t
U4-FWD low-current reverse recovery measured waveform
-VDC
(U4-IGBT + U4-FWD) LS Search coil detection voltage
80
fsw = 10 Hz
70 Tj = Room
Conventional trench IGBT temperature
60
50
40
30
U4-IGBT
20
30 70 110 150 190 230
Frequency (MHz)
PIM EP3
EconoPACK-plus (6 in 1)
1,200 V
2 in 1 M232 M233
M235
M249 M248
1 in 1 M142 M143
4. Conclusion References
(1) Laska, T. et al. The Field Stop IGBT (FS IGBT) A New
The U4-IGBT and U4-FWD technologies, charac- Power Device Concept with a Great Improvement
teristics, and product lineup of IGBT modules has been Potential. Proc. 12th ISPSD. 2000, p.355-358.
presented above. These products make full use of the (2) Otsuki, M. et al. 1200 V FS-IGBT module with en-
latest semiconductor technology and package technolo- hanced dynamic clamping capability. Proc. ISPSD04.
gy to realize lower loss devices, and we are confident 2004, p.339-342.
2. Product Lineup
M248 package
Collector
emitter VGE = Tj = 25C 2.25 600
saturation VCE(sat) +15 V V 400
voltage IC =
(sence 1,200 A Tj = 125C 2.65 200
terminal)
VGE = 0 V 0
Input 0 0.5 1 1.5 2 2.5 3 3.5
Cies VCE = 10 V 110 nF
capacitance VCE (sat) (V)
f = 1 MHz
Turn-on ton VCC = 900 V 3.10
time tr IC = 1,200 A 1.25
VGE = 15 V s Fig.3 VF I F characteristics
Turn-off toff RG = + 4.7 / - 1.2 1.45
time tf Tj = 125C 0.25
1,400
Forward VGE = T = 25C 1.80
j
on-voltage 0V 1,200
VF V
(sence IF =
terminal) 1,200 A Tj = 125C 2.00 1,000
Tj = 25C Tj = 125C
Reverse VCC = 900 V 800
IF (A)
Condi- 200
Item Symbol Min. Typ. Max. Unit
tion 0
0 0.5 1 1.5 2 2.5 3
Thermal resistance IGBT 0.0252
Rth(j-c) K/W VF (V)
(for 1 device) FWD 0.042
di/dt (A/s)
U-module IC : 500 A / div 6,000
VCE : 500 V / div
4,000
U4-module
U-module
2,000
U4-module
0 V, 0 A 0
t : 500 ns / div 0 25 50 75 100 125 150 175 200 225
IF (A)
(a) di / dt IF
Fig.5 Turn-off waveforms (VCC = 900 V, I C = 1,200 A, 125C) Tj = 25C, VCC = 1,200 V, Lm = 75 nH,
Rgon = 0.68 , VGE = +15 V /-15 V
2,000
U-module
0V 1,500
VGE : 20 V / div
Vsp (V)
1,000
U4-module U4-module
U-module
500
IC : 500 A / div
VCE : 500 V / div 0
0 25 50 75 100 125 150 175 200 225
IF (A)
(b) Vsp IF
0 V, 0 A
t : 500 ns / div
1,500 VF
Eoff
1,000
0 V, 0 A
Eon IF : 200 A / div
500
VCE(sat)
0
U U4
(a) Generation mode (cos = 0.9)
2,500 Rgoff = 1.2 and T j = 125C. When driven with the
same gate resistance (Rgoff), the turn-off loss was
2,000 1,825W approximately 5 % lower for the U4-module than for
1,575W
the U-module.
Loss (W)
1,500
(3) PWM inverter power loss simulation
1,000 Figure 6 shows the results of a simulation of
inverter power loss when operated under the same
500 conditions (Iout = 860 A rms, cos = 0.9 and - 0.9, fc =
2.5 kHz). The power loss generated in the U4-module
0
U U4 was approximately 10 % less during generation mode
(b) Regeneration mode (cos = - 0.9) and approximately 14 % less during regeneration mode
than that of the U-module.
(4) Low-current reverse recovery characteristics
module). The characteristic features of U4-modules, reduced
(2) Turn-off characteristic low-current turn-on di /dt and improved gate resis-
Figure 5 shows turn-off waveforms for an inductive tance controllability of the turn-on di/ dt, enable sup-
load under the conditions of VCC = 900 V, IC = 1,200 A, pression of the surge voltage at the event of reverse
Emitter terminal
Composite current (IC1 + IC2)
VCE
0 V, 0 A
IC1 : DCB1 current
Divided DCB
Collector terminal substrate
(b) Balanced inductance
Yoshitaka Nishimura
Kazunaga Onishi
Eiji Mochizuki
Ceramic
The structural design was evaluated in order to
suppress the amount of metal base deformation due to
Copper foil
the difference in thermal expansion coefficients.
Table 1 lists characteristics of various ceramics
Sn-Pb solder Metal base: 16 ppm/K used in a typical insulated substrate and of the copper
in the metal base. Alumina substrates, which are
Alumina
-200
(2)
-400 -240
-280
-500
(1) -320
-600
Aluminum nitride -360
-700 -400
0 0.2 0.4 0.6 0.8 100 120 140 160 180 200 220 240 260
Ceramic thickness (mm) Solder melting point (C)
Fig.4 Relationship between the number of thermal cycles Fig.6 Stress-strain curve for Sn-Ag solder and Sn-Ag-In solder
tested and solder crack length at room temperature
Aluminum nitride 70
12
Solder crack length (mm)
8 Alumina
Ceramic thickness: 0.32 mm 40
6 Sn-Ag
Copper foil thickness: 0.25 mm 30
4
20
2
10
0 0
0 200 400 600 0 0.5 1.0 1.5 2.0
Number of thermal cycles tested Strain (%)
12
Sn-Ag
Fig.10 Microstructure of solder
Solder crack length (mm)
10 Sn-Ag-In
6 Before
testing
4
0
0 200 400 600
Number of thermal cycles tested After
100 cycles
Fig.9 Relationship between solder thickness and crack length Sn-Ag Sn-Ag-In
12
Fig.11 Fuji Electrics RoHS-compliant, lead-free IGBT module
Solder crack length (mm)
10
Sn-Ag
8
Sn-Ag-In Pin: Sn-alloy plating
6
2 Case rings:
Trivalent chromium
plating
0
0 50 100 150 200 250
Solder thickness (m)
Alumina thickness:
11 0.32 mm
Copper foil thickness: 0.5 mm
Coefficient of thermal expansion
of insulation substrate (ppm / K)
10
Alumina thickness: 0.25 mm
Silicon nitride
9
thickness: 0.32 mm Copper foil thickness: 0.5 mm
8
6
Aluminum nitride
approximately 100 m. From this result, it is under-
thickness: 0.635 mm
5 stood that increasing the thickness of the copper foil
4 actually increases the thermal expansion coefficient of
0.2 0.3 0.4 0.5 0.6
the ceramic insulated substrate.
Copper foil thickness (mm)
We conducted thermal cycling tests on samples
having an insulated substrate and thicker copper foil
(Fig. 13). In a sample having a copper foil thickness of
Fig.13 Relationship between the number of thermal cycling 0.25 mm, cracks occurred after 300 thermal cycles. By
tests and solder crack length changing the copper foil thickness to 0.5 mm, no cracks
occurred even after 500 thermal cycles. Increasing the
1.2
Sn-Ag-In
thickness of the copper foil successfully suppressed the
Conventional alumina substrate progress of cracks in the thermal cycle tests. Figure 14
Solder crack length (mm)
1
Ceramic thickness: 0.25 mm shows cross-sections of alumina DCB (direct copper
Copper foil thickness: 0.25 mm
0.8 bonding) substrates in which an alumina ceramic is
joined to a 0.5 mm-thick copper foil.
0.6
Furthermore, it has been shown that the use of
0.4 thicker copper foil also improves the thermal resis-
Thick copper foil - alumina substrate
Ceramic thickness: 0.25 mm tance. Even in a structure equipped with a metal base,
0.2 Copper foil thickness: 0.5 mm by increasing the thickness of the copper foil from
0 0.25 mm to 0.5 mm, we succeeded in decreasing the
0 200 400 600 thermal resistance by approximately 15 %.
Number of thermal cycling tests
7. Conclusion
using conventional leaded solder. Fuji Electric has established lead-free IGBT mod-
ule technology that uses an alumina ceramic insulated
6. Higher Reliability with a Thick Copper Foil and substrate and Sn-Ag-In solder to achieve better ability
Alumina Substrate to withstand thermal cycle testing than when Sn-Ag
solder is used. Moreover, by using an alumina ceramic
To increase reliability even further, we considered insulated substrate and thicker copper foil, lower
making the thermal expansion coefficient of the ceram- thermal resistance and high-reliability, even with lead-
ic insulated substrate approach that of the metal base. free solder, can be achieved.
Figure 12 shows the results of FEM (finite element Fuji Electric is committed to contributing to the
method) analysis of the thermal expansion coefficients protection of the global environment by developing
of various ceramic insulated substrates when the lead-free IGBT modules that use this technology into
copper foil thickness is changed. It can be seen that commercial products.
the thermal expansion coefficient of the ceramic insu-
lated substrate increases when a thick copper foil base References
is used. (1) Morozumi, A. et al. Reliability of Power Cycling for
Using an insulated substrate having an alumina IGBT Power Semiconductor Modules. IEEE Transac-
ceramic thickness of 0.25 mm and various thicknesses tions On Industry Applications. vol.39, no.3, 2003-05/
of copper foil, we investigated the amount of deforma- 06, p.665-671.
tion in the metal base. By increasing the copper foil (2) Nishimura, Y. et al. New generation metal base free
thickness from 0.25 mm to 0.5 mm, the amount of IGBT module structure with low thermal resistance. in
deformation of the metal base could be reduced by Proc. 16th ISPSD. 2004, p.347-350.
Isao Sano
Zenchi Hayashi
Masaharu Edo
Synchro-
Portable electronic equipment is increasingly re- Conver- Maximum Example
nous/
Model sion Output voltage output applica-
quested to provide the apparently conflicting proper- asynchro-
method current tions
nous
ties of smaller size and greater multi-functionality.
Moreover, operation at lower current is also requested Synchro-
nous
in order to reduce power consumption and to extend FB6813Q Buck 1.05 to 2.025 V 300 mA CPU
rectifica-
the duration of continuous battery-powered operation. tion
The LSI (large scale integrated) circuits used in Synchro-
portable electronic equipment are fabricated with nous
FB6804Q Buck 2.5 to 5.15 V 300 mA I/O
rectifica-
miniaturization processes to run on lower supply tion
voltages, and the power supplies of equipment having Asynchro-
FB6824Q Buck 2.5 to 5.15 V 300 mA I/O
just a single Li-ion battery cell (3.6 V) as well as nous
equipment containing two cells (7.2 V) are transition- Synchro-
ing from a configuration of a conventional LDO (low nous
FB6805Q Buck 3.0 to 3.45 V 600 mA Motor
rectifica-
drop out regulator) entity toward a configuration based tion
on a DC-DC converter. Asynchro-
FB6825Q Buck 3.0 to 3.45 V 600 mA Motor
So that the battery operation time may be extend- nous
ed as much as possible, power management for the FB6806Q Boost 15.5 to 16.25 V 40 mA
Asynchro-
CCD
power supply system is needed to turn the power on nous
and off accurately for each LSI circuit acting as a load. Inverted - 27.0 V Asynchro- White
FB6807Q 20 mA LED
boost input voltage nous
For this purpose, a DC-DC converter is required for
each power supply to be turned on and off. However,
the attachment of a large-size inductor to each DC-DC Fig.1 Ultrasonic flip-chip bonding
converter prevents the set from being made smaller
and thinner. Moreover, the use of a small-size IC chip
inductor requires a control IC that operates at high Stud bump
switching frequencies.
This paper describes Fuji Electrics FB6800 series Inductor
of micro DC-DC converters that integrate a control IC
and an inductor, having been developed and commer- Ultrasonic
cialized in response to the above-described market- flip-chip
Ferrite base
bonding
place requirements of portable electronic equipment.
Underfill
2. Features
Fig.2 Appearance of micro DC-DC converter (1) The micro DC-DC converter assembly utilizes flip-
chip bonding.
Top view Bottom view Side view With an assembly that uses conventional wire
bonding, wires extend from the chip to the wire-
connecting base, and as a result the inductor becomes
larger in size and impedes efforts to save space.
3.5 mm
Fig.3 Appearance of micro DC-DC converter (2) Fig.4 Stud bump photograph
PVDD
VDD Battery
Internal power supply
CINT CIN
-
1.0 V
GND REF +
0.8 V
Buffer
amp 0.1 V
p-channel PDMOS
driver
FB
CFB
RFB Error PWM
IN amp 0.6 V comparator
-
+ + Inductor
1.0 V +
Dead OUT Buck
0.2 V SCP com- - converter
parator 1 time
- output
+ COUT
1.0 V +
SCP com-
OUT - parator 2
0.1 V +
SS com- OSC TSD
SS_IN parator
+ n-channel NDMOS
driver
0.8 V -
ALERT
On, off, protection control logic
SD
PGND
SCL Serial interface Data register Decoder
SEL
Fig.6 Example of FB6813Q application circuit Fig.7 Example of measured efficiency of the FB6813Q
PVDD
PGND 100
ALERT
SCL VIN = 3.6 V
C3
VOUT = 1.8 V
3 2 1
SD 4 12 OUT 90
80
6 10 PGND VOUT = 1.5 V
C2 7 8 9
C1
R1 VOUT = 1.2 V
70
GND
SS_IN
60
Input voltage 7 to 14 V
CS1 CS2 SL2 SL1 RT ON_OFF VCC PVCC1A,B,C NC
Output voltage >1 V
No. of output channels 2 PVCC2
A,B,C
Soft- Slope Oscil-
compen-
Switching control system Current mode start
circuit
sation lator
circuit
UVLO
circuit
Overheat Reference
ON/ OFF protection
circuit
voltage
NC
circuit 1 circuit circuit
70
Fig.3 Application circuit example
Efficiency (%)
60
50
Output voltage 2 GND Output voltage 1
1.5 V 1.2 V
40
Output voltage 1 = 1.2 V
+ + 30 Output voltage 1 = 1.5 V
Output voltage 1 = 3.3 V
VCC 20
9V + Output voltage 1 = 5.0 V
10
0
0 0.5 1 1.5
Load current (A)
PVCC2A 48 47 46 45 44 43 42 41 40 39 38 37 PVCC1A
SEL3
SEL4
DGND2
ON_OFF
CS2
REG
VCC
DGND1
CS1
CP
SEL1
SEL2
1 36
2 PVCC2B PVCC1B 35
3 PVCC2C PVCC1C 34
4 NC NC 33
Fig.5 Efficiency of output voltage 2
5 OUT2A OUT1A 32
SW2 SW1
6 OUT2B OUT1B 31
FA7731F
7 OUT2C OUT1C 30
100
8 OUT2D OUT1D 29
9 PGND2A PGND1A 28
10 PGND2B PGND1B 27 90
11 PGND2C PGND1C 26
SGND
SGND
12 PGND2D PGND1D 25
80
IN2A
IN1A
FB2
FB1
IN2
IN1
NC
SL2
SL1
RT
13 14 15 16 17 18 19 20 21 22 23 24
70
Efficiency (%)
60
50
40
Output voltage 2 = 1.2 V
Table 3 ON resistance of internal power MOSFETs 30 Output voltage 2 = 1.5 V
Output voltage 2 = 3.3 V
20
Channel Device ON-resistance () Output voltage 2 = 5.0 V
PMOSFET 0.3 10
1
NMOSFET 0.2 0
0 0.5 1 1.5
PMOSFET 0.4
2 Load current (A)
NMOSFET 0.1
5 V/div
Output
SW1 voltage
Node voltage 1.2 V
1 s/div
0V
20 mV/div
100 s/div
Fig.7 Steady state output voltage waveforms when output value, the output voltage can be adjusted to any
voltage is set to 1.0 V arbitrary value of 1.0 V and above. Figure 7 shows the
steady state output voltage waveforms when input
Output voltage and output voltage are set to 9.0 V and 1.0 V
voltage
(enlarged respectively.
waveform)
1.0 V
3.5 Characteristic when load fluctuates
In order to provide stable supply voltage, the DC-
20 mV/div DC converter control system employs a current mode
2 s/div
system having excellent stability. Figure 8 shows the
transient state output voltage waveforms when the
Output
voltage output voltage is set to 1.2 V. In response to 1 A step-
0V up and step-down load fluctuations, an excellent
1 V/div
transient state characteristic is exhibited with output
2 s/div fluctuations of 20 mV or less and extremely small load
fluctuations.
4. Conclusion
Hiroshi Maruyama
Hironobu Shiroyama
Takaaki Uchida
IS reduction tor -
decreased, by limiting the maximum switching 5V
max. 130 kHz circuit
Power supply
9.85 V/
9.1 V
for internal
frequency, or by reducing the maximum frequency control
Output
linearly if the FB pin voltage (feedback voltage 20 k
Current
circuit
comparator S Q
from the secondary side) drops below 1.3 V. FB 125
+
-
R
OUT
k -
Maximum switching frequency: 65 kHz (FA5530) 125
1V
-
ZCD
k
130 kHz (FA5531) Soft-start
voltage generator +
Overvoltage detection 2
(1 ms) -
Minimum switching frequency: 1 kHz -
+
8V
Switching turn- Timer-
(FA5530, FA5531) 0.4 V
off level detection Timer
190 ms VCC
latch
(48 s)
Quasi-resonant Controller IC 71
Fig.4 Relationship between output power (load) and switching Fig.6 Waveforms during an overload condition
frequency
VCC
11.55 V
9.85 V
9.1 V
Max. fsw
Switching frequency fsw
(130 kHz)
Startup
current
enable
signal
3.3 V
FB pin
(1 kHz)
Output power Po
Timer
operation 190 ms 190 ms
1,510 ms
Max. fsw
limit 7.69 s 7.69 s Max. fsw decreases Normal load Overload Normal load
(130 kHz) (130 kHz) (min. 1 kHz, 1 ms)
ZCD pin
falling-edge
detection
signal
C21
Bead 4,700pF
2,200pF D21
C11
80 to +19 V
264 V AC 7 mH D3SBA60 3,300 F 4.7 F 0 to 5 A
470pF L1 D1 T1 L21 3 L22
+
R1 C2 Short
1M C1 + R3
C4 C5
R2 C3 56 k
1M 220 F 2,200 D22
pF + + + +
YG865C15R
2 C22 C23 C24 C25
F1 0.22 F 470pF D2
3A ERA38 1,000 F
- 06
J1
FG Q1
2SK3687 C29 GND
0.022 F R22
C6 2 k
220 R26 C28
pF 200 k
D3 R5 R7 PC1 R23 0.1
ERA15-01 10 4.7 k
10 k F
R27
R4 R8 18 k
R6 C26 2,200pF
7.5k 100 0.22
D4 R25 C27
100 SC902
R9 -2
IC21 10 k 0.01 F
LMV431
1 8 R28
6.8 ERA22-10 15 k
2 7 R14 D5 T1
3 6 Np : Ns : Nsub : 57 : 10 : 12
R12 4 5
PC1
0 Lp = 360 H
C9 C7
22pF 1,000 FA5531
C8 +
pF C10
4,700pF
33 F
R11
100 k
Fig.8 Switching waveform at maximum rated load (100 V AC Fig.9 Switching waveform at 30 % load condition (100 V AC
input) input)
0 0
5 s/div 5 s / div
at the second minimum. medium load to no load, and that the peak frequency
Figure 10 shows the change in switching frequency occurs at 100 to 110 kHz.
as related to the output current, in the case where
clamping was used. From the figure, it can be seen 3.3 Input power at unloaded condition
that the switching frequency increases as the output Power supply circuits used in typical electronic
power decreases in the region extending from the rated products can be observed operating at an unloaded
load to a medium load. On the other hand, it can be condition when, for example, an AC adapter is plugged
seen that the switching frequency decreases as the into an electrical outlet but the equipment that utilizes
load becomes lighter in the region extending from a the power does not operate. In this case, since the
Quasi-resonant Controller IC 73
Fig.10 Switching frequency characteristics Fig.12 Waveform at unloaded condition
120
MOSFET drain voltage
100 (100 V/ div)
Switching frequency (kHz)
80
60
40
100 V AC
20
240 V AC
0
0 1 2 3 4 5
0
Output current (A)
200 s / div