Documentos de Académico
Documentos de Profesional
Documentos de Cultura
IRFP260N
HEXFET Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.04
l Fully Avalanche Rated G
l Ease of Paralleling ID = 50A
l Simple Drive Requirements S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.50
RCS Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient 40
www.irf.com 1
10/08/04
IRFP260N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.04 VGS = 10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 27 S VDS = 50V, ID = 28A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 234 ID = 28A
Qgs Gate-to-Source Charge 38 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 110 VGS = 10V
td(on) Turn-On Delay Time 17 VDD = 100V
tr Rise Time 60 ID = 28A
ns
td(off) Turn-Off Delay Time 55 RG = 1.8
tf Fall Time 48 VGS = 10V
Between lead, D
LD Internal Drain Inductance 5.0
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 13
and center of die contact S
200
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by ISD 28A, di/dt 486A/s, VDD V(BR)DSS,
max. junction temperature. TJ 175C
Starting TJ = 25C, L = 1.5mH Pulse width 400s; duty cycle 2%.
RG = 25, IAS = 28A.
2 www.irf.com
IRFP260N
1000 1000 VGS
VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V
4.5V
10 10
4.5V
1 1
1000 3.5
ID = 50A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
3.0
2.5
100
(Normalized)
TJ = 175 C
2.0
1.5
TJ = 25 C
10
1.0
0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)
www.irf.com 3
IRFP260N
8000 16
VGS = 0V, f = 1 MHZ ID = 28A
Ciss = Cgs + Cgd, Cds SHORTED V DS= 160V
Ciss
5000
4000 8
Coss
3000
2000 4
Crss
1000
0 0
0 50 100 150 200
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
100
TJ = 175 C 100 10us
10 100us
TJ = 25 C
10
1ms
1
TC = 25 C 10ms
TJ = 175 C
V GS = 0 V Single Pulse
0.1 1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
-
ID , Drain Current (A)
10V
30
30 Pulse Width 1 s
Duty Factor 0.1 %
20
20 Fig 10a. Switching Time Test Circuit
VDS
10 90%
10
0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
C) 175 10%
C
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 SINGLE PULSE
(THERMAL RESPONSE) PDM
0.01
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRFP260N
RG D.U.T +
V
- DD
IAS A
20V
tp 0.01
500
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
I AS
50K
12V .2F
QG .3F
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRFP260N
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. V DD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
www.irf.com 7
IRFP260N
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8 www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/